WO2002005323A2 - Thermally processing a substrate - Google Patents
Thermally processing a substrate Download PDFInfo
- Publication number
- WO2002005323A2 WO2002005323A2 PCT/US2001/021154 US0121154W WO0205323A2 WO 2002005323 A2 WO2002005323 A2 WO 2002005323A2 US 0121154 W US0121154 W US 0121154W WO 0205323 A2 WO0205323 A2 WO 0205323A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- purge gas
- substrate
- thermal
- processing system
- thermal processing
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/10—Heating of the reaction chamber or the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/12—Heating of the reaction chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002508836A JP2004503108A (en) | 2000-07-06 | 2001-07-03 | Heat treatment of semiconductor substrate |
EP01952404A EP1297560A2 (en) | 2000-07-06 | 2001-07-03 | Thermally processing a substrate |
KR1020037000152A KR100838874B1 (en) | 2000-07-06 | 2001-07-03 | Thermally processing a substrate |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/611,349 | 2000-07-06 | ||
US09/611,349 US6803546B1 (en) | 1999-07-08 | 2000-07-06 | Thermally processing a substrate |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2002005323A2 true WO2002005323A2 (en) | 2002-01-17 |
WO2002005323A3 WO2002005323A3 (en) | 2002-06-20 |
Family
ID=24448674
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2001/021154 WO2002005323A2 (en) | 2000-07-06 | 2001-07-03 | Thermally processing a substrate |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP1297560A2 (en) |
JP (1) | JP2004503108A (en) |
KR (1) | KR100838874B1 (en) |
CN (1) | CN1279577C (en) |
WO (1) | WO2002005323A2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100709517B1 (en) * | 1999-07-08 | 2007-04-20 | 어플라이드 머티어리얼스, 인코포레이티드 | Method of thermally processing a substrate |
US10770309B2 (en) | 2015-12-30 | 2020-09-08 | Mattson Technology, Inc. | Features for improving process uniformity in a millisecond anneal system |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5719710B2 (en) * | 2011-07-11 | 2015-05-20 | 株式会社ニューフレアテクノロジー | Vapor growth apparatus and vapor growth method |
US8980767B2 (en) * | 2012-01-13 | 2015-03-17 | Applied Materials, Inc. | Methods and apparatus for processing a substrate |
KR102010329B1 (en) * | 2017-08-04 | 2019-10-15 | 주식회사 디엠에스 | Substrate processing apparatus and in line type substrate processing system using the same |
JP7018825B2 (en) * | 2018-06-05 | 2022-02-14 | 東京エレクトロン株式会社 | Film formation method and film formation equipment |
CN114045470B (en) * | 2021-12-31 | 2022-09-30 | 西安奕斯伟材料科技有限公司 | Cleaning method for normal-pressure epitaxial reaction chamber and epitaxial silicon wafer |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4818327A (en) * | 1987-07-16 | 1989-04-04 | Texas Instruments Incorporated | Wafer processing apparatus |
US5181556A (en) * | 1991-09-20 | 1993-01-26 | Intevac, Inc. | System for substrate cooling in an evacuated environment |
EP0644578A2 (en) * | 1993-09-16 | 1995-03-22 | Hitachi, Ltd. | Method of holding substrate and substrate holding system |
EP0698673A1 (en) * | 1994-08-23 | 1996-02-28 | Novellus Systems, Inc. | Gas-based substrate deposition protection |
WO1998001890A1 (en) * | 1996-07-08 | 1998-01-15 | Advanced Semiconductor Materials International N.V. | Method and apparatus for contactless treatment of a semiconductor substrate in wafer form |
US6046439A (en) * | 1996-06-17 | 2000-04-04 | Mattson Technology, Inc. | System and method for thermal processing of a semiconductor substrate |
US6054688A (en) * | 1997-06-25 | 2000-04-25 | Brooks Automation, Inc. | Hybrid heater with ceramic foil serrated plate and gas assist |
EP1067587A2 (en) * | 1999-07-08 | 2001-01-10 | Applied Materials, Inc. | Thermally processing a substrate |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62282437A (en) * | 1986-05-31 | 1987-12-08 | Shinku Riko Kk | Rapid heating and cooling device for semiconductor wafer treatment |
JP2635153B2 (en) * | 1989-03-15 | 1997-07-30 | 株式会社日立製作所 | Vacuum processing method and device |
US5676205A (en) * | 1993-10-29 | 1997-10-14 | Applied Materials, Inc. | Quasi-infinite heat source/sink |
US5620560A (en) * | 1994-10-05 | 1997-04-15 | Tokyo Electron Limited | Method and apparatus for heat-treating substrate |
US5834068A (en) * | 1996-07-12 | 1998-11-10 | Applied Materials, Inc. | Wafer surface temperature control for deposition of thin films |
JPH10172977A (en) * | 1996-12-11 | 1998-06-26 | Sumitomo Electric Ind Ltd | Heat treatment method and its device for compound semiconductor substrate |
EP0898731A1 (en) * | 1996-12-20 | 1999-03-03 | Koninklijke Philips Electronics N.V. | Furnace for rapid thermal processing |
JPH10199824A (en) * | 1997-01-14 | 1998-07-31 | Japan Storage Battery Co Ltd | Ultraviolet treating apparatus |
WO2000031777A1 (en) * | 1998-11-20 | 2000-06-02 | Steag Rtp Systems, Inc. | Fast heating and cooling apparatus for semiconductor wafers |
NL1013938C2 (en) * | 1999-12-23 | 2001-06-26 | Asm Int | Device for treating a wafer. |
JP2001297995A (en) * | 2000-04-13 | 2001-10-26 | Nec Corp | Manufacturing method of circuit and manufacturing device of circuit |
JP2001308023A (en) * | 2000-04-21 | 2001-11-02 | Tokyo Electron Ltd | Equipment and method for heat treatment |
-
2001
- 2001-07-03 CN CNB018144985A patent/CN1279577C/en not_active Expired - Lifetime
- 2001-07-03 JP JP2002508836A patent/JP2004503108A/en active Pending
- 2001-07-03 WO PCT/US2001/021154 patent/WO2002005323A2/en active Application Filing
- 2001-07-03 EP EP01952404A patent/EP1297560A2/en not_active Withdrawn
- 2001-07-03 KR KR1020037000152A patent/KR100838874B1/en not_active IP Right Cessation
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4818327A (en) * | 1987-07-16 | 1989-04-04 | Texas Instruments Incorporated | Wafer processing apparatus |
US5181556A (en) * | 1991-09-20 | 1993-01-26 | Intevac, Inc. | System for substrate cooling in an evacuated environment |
EP0644578A2 (en) * | 1993-09-16 | 1995-03-22 | Hitachi, Ltd. | Method of holding substrate and substrate holding system |
EP0698673A1 (en) * | 1994-08-23 | 1996-02-28 | Novellus Systems, Inc. | Gas-based substrate deposition protection |
US6046439A (en) * | 1996-06-17 | 2000-04-04 | Mattson Technology, Inc. | System and method for thermal processing of a semiconductor substrate |
WO1998001890A1 (en) * | 1996-07-08 | 1998-01-15 | Advanced Semiconductor Materials International N.V. | Method and apparatus for contactless treatment of a semiconductor substrate in wafer form |
US6054688A (en) * | 1997-06-25 | 2000-04-25 | Brooks Automation, Inc. | Hybrid heater with ceramic foil serrated plate and gas assist |
EP1067587A2 (en) * | 1999-07-08 | 2001-01-10 | Applied Materials, Inc. | Thermally processing a substrate |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100709517B1 (en) * | 1999-07-08 | 2007-04-20 | 어플라이드 머티어리얼스, 인코포레이티드 | Method of thermally processing a substrate |
US10770309B2 (en) | 2015-12-30 | 2020-09-08 | Mattson Technology, Inc. | Features for improving process uniformity in a millisecond anneal system |
Also Published As
Publication number | Publication date |
---|---|
JP2004503108A (en) | 2004-01-29 |
WO2002005323A3 (en) | 2002-06-20 |
CN1447980A (en) | 2003-10-08 |
CN1279577C (en) | 2006-10-11 |
KR100838874B1 (en) | 2008-06-16 |
KR20030014322A (en) | 2003-02-15 |
EP1297560A2 (en) | 2003-04-02 |
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