WO2002005318A3 - High density giant magnetoresistive memory cell - Google Patents
High density giant magnetoresistive memory cell Download PDFInfo
- Publication number
- WO2002005318A3 WO2002005318A3 PCT/US2001/041177 US0141177W WO0205318A3 WO 2002005318 A3 WO2002005318 A3 WO 2002005318A3 US 0141177 W US0141177 W US 0141177W WO 0205318 A3 WO0205318 A3 WO 0205318A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- memory cell
- magnetic layers
- giant magnetoresistive
- high density
- magnetoresistive memory
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
Abstract
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU2001276046A AU2001276046A1 (en) | 2000-07-11 | 2001-06-27 | High density giant magnetoresistive memory cell |
JP2002508831A JP2004508698A (en) | 2000-07-11 | 2001-06-27 | High density giant magnetoresistive memory cell |
EP01953615A EP1386322A2 (en) | 2000-07-11 | 2001-06-27 | High density giant magnetoresistive memory cell |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US21733900P | 2000-07-11 | 2000-07-11 | |
US60/217,339 | 2000-07-11 | ||
US09/883,672 US6594175B2 (en) | 2000-07-11 | 2001-06-18 | High density giant magnetoresistive memory cell |
US09/883,672 | 2001-06-18 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2002005318A2 WO2002005318A2 (en) | 2002-01-17 |
WO2002005318A3 true WO2002005318A3 (en) | 2003-09-04 |
Family
ID=26911850
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2001/041177 WO2002005318A2 (en) | 2000-07-11 | 2001-06-27 | High density giant magnetoresistive memory cell |
Country Status (5)
Country | Link |
---|---|
US (1) | US6594175B2 (en) |
EP (1) | EP1386322A2 (en) |
JP (1) | JP2004508698A (en) |
AU (1) | AU2001276046A1 (en) |
WO (1) | WO2002005318A2 (en) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW544677B (en) * | 2000-12-26 | 2003-08-01 | Matsushita Electric Ind Co Ltd | Magneto-resistance memory device |
KR100462791B1 (en) * | 2001-11-30 | 2004-12-20 | 한국과학기술연구원 | A wordline with a magnetic field keeper for magnetic memory devices and sensors and method of manufacture therefor |
US6885576B2 (en) * | 2002-08-13 | 2005-04-26 | Micron Technology, Inc. | Closed flux magnetic memory |
US6925000B2 (en) | 2003-12-12 | 2005-08-02 | Maglabs, Inc. | Method and apparatus for a high density magnetic random access memory (MRAM) with stackable architecture |
CN1305525C (en) * | 2004-03-27 | 2007-03-21 | 中国人民解放军第三军医大学 | 0157 bacterium gene engineering multivalence subunit vaccine of human and sensitive animals and its preparing method |
US20050269612A1 (en) * | 2004-05-11 | 2005-12-08 | Integrated Magnetoelectronics | Solid-state component based on current-induced magnetization reversal |
US7061037B2 (en) * | 2004-07-06 | 2006-06-13 | Maglabs, Inc. | Magnetic random access memory with multiple memory layers and improved memory cell selectivity |
US7075818B2 (en) * | 2004-08-23 | 2006-07-11 | Maglabs, Inc. | Magnetic random access memory with stacked memory layers having access lines for writing and reading |
US7911830B2 (en) | 2007-05-17 | 2011-03-22 | Integrated Magnetoelectronics | Scalable nonvolatile memory |
EP2539896B1 (en) * | 2010-02-22 | 2016-10-19 | Integrated Magnetoelectronics Corporation | A high gmr structure with low drive fields |
US9741923B2 (en) | 2015-09-25 | 2017-08-22 | Integrated Magnetoelectronics Corporation | SpinRAM |
JP6258452B1 (en) * | 2016-12-02 | 2018-01-10 | 株式会社東芝 | Magnetic memory |
US10762940B2 (en) | 2016-12-09 | 2020-09-01 | Integrated Magnetoelectronics Corporation | Narrow etched gaps or features in multi-period thin-film structures |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5587943A (en) * | 1995-02-13 | 1996-12-24 | Integrated Microtransducer Electronics Corporation | Nonvolatile magnetoresistive memory with fully closed flux operation |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3972786A (en) | 1974-06-28 | 1976-08-03 | Ampex Corporation | Mechanically enhanced magnetic memory |
US4751677A (en) | 1986-09-16 | 1988-06-14 | Honeywell Inc. | Differential arrangement magnetic memory cell |
US5173873A (en) | 1990-06-28 | 1992-12-22 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | High speed magneto-resistive random access memory |
US5420819A (en) * | 1992-09-24 | 1995-05-30 | Nonvolatile Electronics, Incorporated | Method for sensing data in a magnetoresistive memory using large fractions of memory cell films for data storage |
US5422621A (en) | 1993-10-29 | 1995-06-06 | International Business Machines Corporation | Oriented granular giant magnetoresistance sensor |
FR2712420B1 (en) | 1993-11-08 | 1995-12-15 | Commissariat Energie Atomique | Magnetic read head with multilayer magnetoresistive element and concentrator and method of making the same. |
US5650889A (en) | 1994-02-07 | 1997-07-22 | Hitachi, Ltd. | Magnetic recording medium containing heavy rare gas atoms, and a magnetic transducing system using the medium |
US5654566A (en) | 1995-04-21 | 1997-08-05 | Johnson; Mark B. | Magnetic spin injected field effect transistor and method of operation |
US5652445A (en) | 1995-04-21 | 1997-07-29 | Johnson; Mark B. | Hybrid hall effect device and method of operation |
US5585986A (en) | 1995-05-15 | 1996-12-17 | International Business Machines Corporation | Digital magnetoresistive sensor based on the giant magnetoresistance effect |
US5741435A (en) * | 1995-08-08 | 1998-04-21 | Nano Systems, Inc. | Magnetic memory having shape anisotropic magnetic elements |
US5640343A (en) | 1996-03-18 | 1997-06-17 | International Business Machines Corporation | Magnetic memory array using magnetic tunnel junction devices in the memory cells |
US5650958A (en) | 1996-03-18 | 1997-07-22 | International Business Machines Corporation | Magnetic tunnel junctions with controlled magnetic response |
US5852574A (en) | 1997-12-24 | 1998-12-22 | Motorola, Inc. | High density magnetoresistive random access memory device and operating method thereof |
JPH11306750A (en) | 1998-04-20 | 1999-11-05 | Univ Kyoto | Magnetic-type semiconductor integrated storage |
US5969978A (en) | 1998-09-30 | 1999-10-19 | The United States Of America As Represented By The Secretary Of The Navy | Read/write memory architecture employing closed ring elements |
US6134138A (en) | 1999-07-30 | 2000-10-17 | Honeywell Inc. | Method and apparatus for reading a magnetoresistive memory |
US6483740B2 (en) * | 2000-07-11 | 2002-11-19 | Integrated Magnetoelectronics Corporation | All metal giant magnetoresistive memory |
-
2001
- 2001-06-18 US US09/883,672 patent/US6594175B2/en not_active Expired - Lifetime
- 2001-06-27 EP EP01953615A patent/EP1386322A2/en not_active Withdrawn
- 2001-06-27 JP JP2002508831A patent/JP2004508698A/en active Pending
- 2001-06-27 WO PCT/US2001/041177 patent/WO2002005318A2/en not_active Application Discontinuation
- 2001-06-27 AU AU2001276046A patent/AU2001276046A1/en not_active Abandoned
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5587943A (en) * | 1995-02-13 | 1996-12-24 | Integrated Microtransducer Electronics Corporation | Nonvolatile magnetoresistive memory with fully closed flux operation |
Also Published As
Publication number | Publication date |
---|---|
EP1386322A2 (en) | 2004-02-04 |
US20020009840A1 (en) | 2002-01-24 |
AU2001276046A1 (en) | 2002-01-21 |
JP2004508698A (en) | 2004-03-18 |
US6594175B2 (en) | 2003-07-15 |
WO2002005318A2 (en) | 2002-01-17 |
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