WO2002001583A1

WO2002001583A1 - Microtransformer

Info

Publication number: WO2002001583A1
Application number: PCT/DE2001/002197
Authority: WO
Inventors: Wolfgang Clemens; Harald GÜNTHER; Jens Hauch; Gotthard Rieger; Jörg ZAPF
Original assignee: Siemens Aktiengesellschaft
Priority date: 2000-06-26
Filing date: 2001-06-13
Publication date: 2002-01-03
Also published as: DE10031064A1; DE10031064C2

Abstract

The invention relates to a microtransformer which can be integrated into an IC housing. Said microtransformer is situated on a substrate consisting of a semiconductor material and comprises two coils with multiple windings and a core which magnetically couples said windings. Each coil consists of a lower coil part and an upper coil part (13, 14) in relation to the substrate, these parts consisting of one or more coil conductor sections (15-16) and being inter-contacted in order to form the respective coil. The two upper coil parts and the two lower coil parts of the two coils lie essentially in one plane and are positioned in such a way that the resulting coils or the two coil parts themselves are wound into each other.

Description

description

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The invention relates to a micro-transformer which can be integrated into an IC housing and which is arranged on a substrate made of a semiconductor material and comprises two coils having a plurality of turns and a core magnetically coupling the coils.

Such a micro-transformer, which can be integrated into an IC housing and can be fitted as an SMD component, for example on printed circuit boards, can be used, for example, for DC-DC voltage conversion or for the galvanically isolated power transmission to a component. Such a component can greatly contribute to further integration and miniaturization in many areas of electronics. Different designs of microtrafos are known in the prior art. A toroidal transformer is described in “A new hybrid technology for planar microtransformer fabrication by 0. Dezuari, SE Gilbert, E. Belloy, MAM Gijs, -erschienen in Sensors and Actuators A 71 (1998), 198 - 207, in which a toroidal core is wrapped from magnetic material by two or more coils. These two coils lie side by side. In the example shown, the primary coil is wound around ^Z Λ of the toroid, the secondary coil occupies the last quarter. In addition, "Load Characteristics of a Spiral Coil Type Thin Film Microtransfor er" by K. Ya aguchi, E. Sugawara, 0. Nakajima, H. Matsuki and K. Muraka i, published in IEEE TRANSACTIONS ON MAGNETICS, VOL. 29, NO. 6 November 1993, pages 3207-3209, a flat coil transformer is known, in which the first and second coils are each formed as helical conductor sections lying in one plane and winding inwards, which lie one above the other in two planes and are galvanically separated from one another , wherein the coils are surrounded on the top and bottom by a core made of magnetic material. ω U) t) P ¹ P>

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1 1 1 l O

his. In this case, the coil parts are designed as flat coils, the one-piece conductor sections of which wind from the outside inwards, contact being made with the inner ends of the two coil parts which form a coil and are located one above the other. Here, too, the coil parts are wound into one another as explained. In contrast to the toroidal core design, there are substantially fewer vias in the insulation, which is also provided here and is designed to insulate the core from the coils and the coils from one another, namely only a total of two which connect the inner ends of the conductor sections to one another. The conductor sections themselves can be spiral or rectangular loops.

The core covers the coil parts at least on the upper and lower sides; if necessary, a central core section can also be provided. It is expedient if the core is closed on at least one side, preferably on several sides, in order to largely close the magnetic circuit.

Even in the form of a flat coil transformer, coils with a significantly larger number of turns can be accommodated in a very small space due to the stacking of the coil sections.

The micro-transformers are preferably applied to the substrate using thin-film technology. A silicon substrate, which can be processed well with known coating technologies, is expediently used as the substrate. According to the invention, the microtrafo can be integrated in an IC housing. In this case, it alone forms a component that can be plugged together with others on a circuit board.

The invention further relates to a circuit arrangement comprising a microtrafo of the type described above, which is formed on a semiconductor substrate, a switching circuit serving to control the microtraph also being provided on the substrate. device is provided, which is contacted with the micro-transformer. If silicon is used as the substrate material, it is particularly advantageously possible to also integrate a circuit which serves for control purposes on the same substrate. Overall, the result is a very small structural unit that contains both the control and the supply part. Of course, other semiconductor materials can also be used.

In addition, a further circuit to be supplied via the microtrafo, which is galvanically isolated from the microtrafo, can also be formed on the substrate. According to this embodiment of the invention, the unit to be supplied by the microtrafo is also arranged on the substrate, but is galvanically separated from the microtrafo due to the conductive properties of the semiconductor material. The entire unit, consisting of the control circuit, the micro-transformer and the circuit to be supplied, can be integrated in a common IC housing.

As an alternative to this, it can be provided that the further circuit to be supplied via the microtrafo is formed on a further semiconductor substrate and is thus galvanically separated from the microtrafo, the two substrates being integrated in a common IC housing.

Further advantages, features and details of the invention result from the exemplary embodiments described below and from the drawing. Show:

1 is a schematic diagram to explain the structure of a toroidal transformer according to the invention,

2 shows a sectional view as a schematic diagram through a toroidal transformer according to FIG. 1,

3 is a schematic diagram showing the structure of a flat coil transformer according to the invention, 4 shows a sectional view as a schematic diagram through a toroidal transformer according to FIG. 3,

5 shows a schematic diagram of a circuit arrangement according to the invention of a first embodiment, and

Fig. 6 is a schematic diagram of an inventive circuit arrangement of a second embodiment.

Fig. 1 shows in the form of a schematic diagram the basic structure of a micro-transformer 1 according to the invention in the form of a toroidal transformer, as shown in section in Fig. 2. The micro transformer 1 consists of two coils 2, 3 which are wound into one another and which surround a toroidal core 4. Each coil 2, 3 consists of a lower coil part 5, 6, each coil part 5, 6 consisting of essentially rectilinear coil conductor sections 7, 8. “Essentially straight-line” is to be understood relatively to the extent that in the manufacture of the micro-transformer, which is built up on the substrate 9, preferably consisting of silicon, using thin-film technology, straight-line and lying in one plane. Structures can be created.

As can be seen in FIG. 1, the coil conductor sections 7, 8 run in a star shape or radially outward. The coil conductor sections 7 and 8, which, as described, each belong to the lower coil part of the coil 2 or the coil 3, alternate with one another. As shown in FIG. 1, the conductor sections do not run directly towards the center M, but at a certain angle with respect to this, which is necessary in order to implement the coil structure winding around the toroidal core 4. A first connection pad 10 for the first connection of the coil 2 is provided on a conductor section 7, and a first connection pad 11 for the coil 3 is correspondingly formed on a conductor section 8.

The two lower coil parts of the coils 2, 3 shown on the left in FIG. 1 are covered with an insulation, preferably SiO ₂ . cυ cυ t to P>P>

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PPN φ P 3 P Hi tr φ P- N Pt i H Φ φ u PP P- P cn o tr P- tr Cu: 3 P- N li cυ P sQ PP cυ NP rt Φ ω P CL KH tr cn P rr tr ¹ O tr N φ Φ P φ CΛ Φ α

P Φ rt cu: ^ P "s; P" rt cn O Φ u P cn ιq rt P O: Φ s: P- rr cn O P-

CL o Φ P Φ P rr P ^J φ Φ cn P "φ PPP Ω *. Φ P Ω P- li • £ φ C Φ ω sQ fu

Φ P P- CL ii &> Φ cn P- Φ p- P P • tr cn tr Φ φ O: EP cυ H φ P- rt P

H rt P Φ φ cn rr P> cn Φ P ^J P rr P P- Φ HP CL ^ q φ cn Φ H Φ Φ cn ⁾ φ PH P- Φ φ cn ü φ P Φ w P- cu P _{^ *} HP P-P- ¹ PPHPO sQ; 3 P- φ £ P ii ii _" » cu P P- PH cu rr H CL P- P CΛ Φ P- CL: CL r + tr

Φ r + CΛ Φ P Φ cυ P P r + P rr tf3 CD H tr ι Ό Ω tr M Φ Φ tö P- "

^• s P- cυ τs sQ φ P tr P> Ω ιq Φ CL: P φ CL Φ PJ P tr tr Φ Φ P cn P φ P-

P Φ PP Φ <P CΛ cn tr ti P- rr - ~ o cn P- Φ ^• ^ P cn P ¹ Φ> tr P, p- φ

P p. EP P p- Φ rt CΛ Ω PJ cυ Φ N 3 ^ rr Φ P r + PL O φ P- Φ Φ Φ t CΛ cn

CL rt φ Φ CL P> C cn Ό tr CL L tr tr rt P- Φ cn φ vq P CL P- P CL P Φ Ω Ti φ φ PP Φ Φ Ό PPP P- ιq cn O Φ rr 00 Φ Φ υ P ¹ Φ rr Φ rr Hi Φ H tr P- P

P Φ H ¹ rr PN ü H P- P- H φ φ Ω tr Ω • PP r + P φ P CU P CL P P- φ C φ rr p- φ P Φ φ <-r Ω cn tr Φ tr tr rr <! , cu P- N φ cn Ω P ¹

P Ω φ P- tr ¹ tr ¹ Ω P r + tr ö Ω P ii P φ α • P- CP CΛ PP ¹ • i li tr L

• ιq P ¹ φ φ φ tr Φ P tr p- φ p- P- fυ H Φ P Φ O ω P- cn rt fu Φ

CΛ φ cn P- P- P- φ Φ 3 CL Ü P- rr P u Φ C | cn PP P- cr PP ιq P tr ¹ P- Φ ii

Ό P rr P rr P P- P- Ω Φ rr P Φ φ Φ P «φ 3 ι Φ P P cn

P P CL Hi φ φ Φ CL rr φ tr CL φ CΛ φ P Φ CL P> CL P- "T φ tr P- f P-! ^

P ^J Hi φ p: H 3 H φ Φ? Φ Ό H rr P Φ ro Φ P P- <o P Φ r + Φ rr cu S Φ φ PP Cu cυ ü H <OPP ¹ P Hl Φ rr Ü HPP P- P rt PH φ P Φ H

P CL Ü tr P- tr cu 00 P- P cn P "o P cn υ Φ P ⁾ rr Φ Φ PH υ cn P" P

P- <! rr cn P cn tr J rt φ P ^J Ό <P P- li cn Cυ P- P- fu tr ιq li ro Φ P- »Ω P α P 1 φ cn Cu t, P ι H P- EP P Φ UKH "P> t» tr Φ φ 1 J- »cn P ⁾ tr φ r cn HW o P ¹ ri- φ O Φ P ⁾ φ P cn Φ rt Φ P- φ 1 P- tr φ s P Ü P 1 1 P> rt tr cn Φ P rt 1 ii 1 P- P- φ ii tr p- J cυ Φ Φ H- φ P- tV> P- Φ P- O Φ 1 P- P Pt P Φ cn Φ cn P ¹ P

H rr P rt Φ P- p ^j 1 P ^ q P 1 1 1 HO 1 Hi 1 1 rr rt 1 Φ 1 CL 1 1

As shown in the right-hand illustration in FIG. 1, two further connection pads 17, 18 for the two coils 2, 3 are provided on two coil conductor sections 15, 16 of the upper coil parts 13, 14.

2 shows, in the form of a schematic diagram, a sectional view through the toroidal transformer 1. Optionally, a magnetic shielding layer 19 (which is only shown in dashed lines here), which has a thickness of about 2-3 μm, can optionally be applied to the substrate 9. Subsequently, a first layer of insulating material is deposited, the insulation being denoted overall by 20 in FIG. 2, since the individual insulation layers on the finished component can no longer be distinguished in this respect. After this insulation layer has been deposited, the two coil parts 5, 6 are deposited, two coil conductor sections 7, 8 being shown in FIG. 2. A further insulating layer is then deposited, onto which the core 4 made of the magnetic material is then deposited. Then an insulating material is applied again that covers the core as a whole. After this, the vias 12 are formed, which, as said, are etched into the insulating material. In the next step, the two upper coil parts 13, 14 are deposited, of which two coil conductor sections 15, 16 are shown in the example shown. At the same time, conductive coil material is also introduced into the vias 12 during this deposition process, as a result of which the plated-through hole to the conductor sections underneath is achieved. Finally, an upper insulating layer is applied, onto which a second shielding layer 21 can optionally be deposited. The two

Layers 19, 21 are only shown in broken lines in FIG. 2. As described, the insulation here is designated as a whole by 20 and is formed by the area shown in dotted lines. Since the coils are wound around the toroid, they are shown broken off in FIG. 2. cυ cυ ro ro P "P ¹

Cn o Cn o Cπ o cn

≤. P „-> φ ^ r ö rr CL cυ P- P- ¹ P CΛ <! PN Ω cn rt rr σ ιq s tr t S σ 2 rs

P- P- ü Φ O: p- r? Ω ιq i

P- φ P tr 3 Cu H P- P- 13 O Cυ P- tr rt Φ Φ PO: Φ ro O: P- PJ & P ü 3 P ιq p- ü P> q CL P φ • O: φ Φ Cυ P Ω φ φ υ PH φ P p- ü ^ q ro P cn ii

CL P ⁾ φ • φ P Φ Φ ιq p. dd EP Hi ü P tr PP tr Ω p- P cn P P- ¹ CL O

CΛ H cn tr g Φ li cn φ ro Φ Φ rr P Ω Hl Φ CL CL P Φ rr Ω φ ^» ö cn P- α rt P" ffi

N P s cυ Φ P- P S P <a H li li P Cu O P φ P H 3 rr P p- Ω P- • ro φ

P tr Φ ** 1 P f p- P Φ P φ Cπ r + cn P 3 CL ^ q Φ φ ≤. tr 3 P- H

P CΛ cn P "N ü? R ι H li P- P ⁾ φ ιq sQ l P Φ cn O r-> p- ro ö α cn fU: rt rt cu φ O tr ti Φ r Ω Ω H - P- Φ 4-. Φ α = cn cn CL cn cn L s: cn H Φ P P-ro rt

O p> Φ Ω P- rt Φ o P CU: tr ¹ 3 cn P- PPP tr O cn Φ rr ro Φ os: CL P- cn φ rr Φ tr u rr sQ ü P- <-r P ¹ • H "• <J Φ li φ ii H tr φ r P- φ P * cn rr ω rt fυ H rr Φ ^ u Φ ti P- Φ Φ P- tr φ O tα Ω et rr ^> ü Hi 3 Cυ o P P - O ö fλ P ω P- e cυ P P- CΛ Φ PP Φ tr P ro P φ O cu Hi H P- PP P- u cn P CΛ CL ü ^• P rt PP Φ cn P- P, PP φ cυ P- PX o ιq cn φ φ w cn • Φ Ω Φ P Φ cn Ω rr CL et C ro cn P- ^ q p- cn Φ <-r cn P- cn φ Ω P ¹ P- cn P rr PP rr rr Φ P- P- P- φ ti rt

P Cυ et P cn Φ 3 P? <! CU S P- P σ φ cu sQ sQ cυ φ ii φ 3 g HP Φ Φ CL φ P • rt * cυ t- * o O: φ • u φ CL Φ H s φ PHL tn PP ¹ P Φ cn H ü tr Φ 3 PH Hi s p- p Φ rr P- CL s: CL CL cu Ω 23 dd rr CΛ sQ cn φ> cυ φ cn Φ P- 3 P ιq P ^> p- Φ P- φ P? φ P- Φ cn rr P- Φ rt P cn

H CΛ P Hi Ω r + P cn φ Φ p, cn 3 H? R SMPHH cn NP p- P li P. H CL PO rö cn P- Ω O tr et PPO: o Cυ rr Ü <_ι. P- - ^> * O cn 2. rö Φ Φ PP Φ ^ 2 P- rr P ^J tr cn φ ≤. P ¹ P EP o Φ? Φ Φ rr CΛ Φ P-; r Cu CL P P- H tn P- P φ P- P p- Φ P -> N Φ 3 rr ≤, ii? P ii Ti CΛ O: CΛ H "P Ω Ω rt φ φ>

N tr ro L ii P- ιq φ PH = 3 φ tr p φ o rr cυ P g Ω P rt P- sQ tr rr PVH? ^« R P- P- ro CL cn φ li li P. P- Φ P) P- rr H tr Hi P * p- tr P Φ Ω CΛ H P- Hi tr * φ up Φ CL et P CL P cn cn Hi P ¹ P, O φ O φ P Φ Φ H rr NN CL P- PO P- H ι 3 ii ro 3 P φ 1 sQ Q rr P- o cn cu PPP CL PP Cu ≤. P- Φ sQ P ¹ rr P

Φ S "ti P- PNP li P rr Hi P- O: υ φ cn rr P- ro H; t rr et fu P- P- rr sQ 5: ^• σ CL O: PN tr o? Rt P 3 CΛ tr P- φ P ¹ cn P Φ rt O li

CL P cn Φ π cn P- Cu Φ EP ι rt α Φ Φ P- N P- rr Φ tr P p- φ Ω PH ιq PJ φ Hi rt ü IX] CL cn rsi n cn Φ Φ P 3 P sQ P rr ^ q PNPP tr & sQ P p- ü Hi cn ιq φ P- li P- Ω £ cn ü tr Φ li O: P Φ CΛ rr H cu s: C Φ N • rt P cu O φ CL HP Φ Ω rr Φ P! ^ Φ Φ P- rt CΛ? P rr φ O: Ω Φ f CL P cυ H • Ό ¹ CΛ

«Tr Φ N Λ tr φ Ω P φ s: P φ P- CΛ O Φ EP rr 3 O: φ rr α cu α tr φ cυ H Cu P- P rt P • ^ ^* > q H c- <Φ P - sQ 3 φ P cn φ tr CL P li Cπ Φ Hi: P- CL ü PP "Ό Φ P 3 P φ ι PP rt P- Φ fu P- CL PO li OP ro P-

P rr ^ cn CL PP j- Cu: CL cn P- rr φ Φ Φ Φ P ii tr li Φ P- ro tr P- cn P 1 φ cn _* CU N> qo EP Φ cn Cu: 3 P φ P Φ P> rt φ P Φ 1 Φ P- cn cn

CU πd H Φ φ P- ü Φ rr cn P> φ H tr φ CΛ P- P. P P- Ω P φ ro Ω ü cn PP 1 vq HP p- EP c PP P><! Φ φ P p CΛ CL P ¹ P cn rr PH

^ P tr p- rt f NP Ω Φ cn cn rt P φ P) PS ^> υ »τ | φ o S! φ rr P-CL

Hi cn P Φ p- <S rf = »P- Φ P- ιq rr ü ιq sQ Ω H tr cn - tr ¹ P ro P o P- li Ω

CU * Ö N 3 oo cn p- φ φ Φ CU cυ Ό tr CΛ NO Φ Φ h- ¹ HP Φ Cυ rr tw li

P CL P P- P o rt cn P P- P P P H O ≤. P p- φ P CΛ s; CL tr rt rt et

Hi P- O P g rr Φ P ιq ιq ω 3 i P- 3 rt CL P ro Ό P- P σ P "rt N

^ q Φ Φ cn P tα Ω 3 Φ P P ö cn cn Ω P- ^ q Φ Φ φ li P P P Pυ: ro rr S,

Φ cn P ι N cυ 3 cn P ~ - cu cn P cn cn tr rr PNH φ li H φ M CL ιq ii P Ω ro Φ tr Φ rr P- 1 • ιq cn OH T3 ^• d Φ PPP P- P P - tr φ P φ Ω sQ rr Ω li

H cn HN dd tr cn P ⁾ cn H ¹ Ω cu cυ PP ι PP tr ¹ rr ro PPP p " ¹ P- P rr CL cu cu N Φ φ ro Φ ^• ^• ö P Φ Ω tr PP CL P- CΛ 1 <Q φ Φ φ cn ιq 3 sQ OP φ

Ω Λ Hi Φ PH o rr φ u Ω P tr 3 PP φ cn φ ö P- ii rr ro Φ P Φ P ^J P- P tr PO φ o HPH tr Φ Φ PP CL CL OH ro tr P- rt cu P - - P _* cn <O f rt tr P- "P- cu P cu cn P cn PP p- p, u CΛ o P- Φ Φ tr H cn O ιq Φ tr

• cn Cυ PP Ω 3 sQ 3 Cυ P- cn v tQ 3 P- P o P cn H CΛ 3 cυ CL Φ P p- P ro et PH rr s; φ CL Φ 3 Ω ^ i Φ Φ ι PHNH φ tr Ω r + P- P- H ro ^ ii Hi ^ 1 tr \ P Φ rt tr CU: H φ ιq P φ P ι P φ ii H rr Φ φ CL • Cu ⁾

& ⁾ P- ⁾ tr 3 ii Φ Sl rt φ cn HP Φ P- Φ P ^Q , C φ PP

1 rr Φ ιq P Φ 3 cυ H P- <s: 1 p- φ> q P φ 1 P- P-

§ Φ Φ ro P ιq P

P- • 1 H P Φ O Cu O P L ii 1 rr P P cn Φ rr

1 "1 1 PP cn l φ 1 1 1 1 ro

finally, a first insulating layer is deposited, here too the insulation is denoted overall by 25. The lower coil parts 26, 27 of the two coils 28, 29 are then deposited. Each coil part 26, 27 consists of a one-piece coil conductor section 30, 31. In the example shown, the coil conductor sections are designed as rectangular loops winding inwards, and they can also be helically wound inwards. A further insulating layer, which covers the coil parts 26, 27, is then deposited. The two coil parts 32, 33, which also each consist of a one-piece conductor section 34, 35 which winds inward like a rectangular loop, are deposited on this in turn. Here too, as in the embodiment of the micro-transformer 1, the coil parts 26, 27 and 32, 33 lie essentially congruently one above the other.

As shown in FIG. 3, corresponding connection pads 36, 37 (for the lower coil parts) and 38, 39 (for the upper coil parts) are provided on the outer ends of the coil conductor sections 30, 31 and 34, 35, respectively. The inner ends of the individual coil conductor sections are positioned such that the respective ends of the upper and lower coil parts belonging to a coil lie directly one above the other. That is, the inner end of the coil part 26 lies exactly below the inner end of the coil part 33, the same applies to the inner end of the coil part 27 and the coil part 32. These inner ends are over, before the deposition of the upper coil parts 32, 33rd Vias formed in the insulating material make contact with one another during the deposition of the upper coil parts 32, 33. In this embodiment, only two vias are required for contacting the coil parts, the vias also being produced here using appropriate etching technology, etc.

Then the upper parts of the coil are again covered with an insulating layer, after which magnetic core magnet is again material is applied. It should be noted that the insulation is removed before applying the upper core material to the extent that there is an edge of free “lower” core material exposed. If the upper core is now separated from the material, it automatically contacts the lower core, so that a closed “cage” is formed, from which only the connection pads 36 - 39 are led out.

Finally, FIG. 4 shows a sectional view through a micro transformer 22. The two coils 28, 29 are represented by different lines. As can be seen, the respective coil parts 26, 27 and 32, 33 are also essentially in one plane. The center connection of the respective upper and lower coil parts is also shown, so that a total of two total coils 28, 29 are formed, the upper and lower coil sections of which are wound into one another. Such a flat coil transformer can also be easily produced with external dimensions of 2 x 2 mm, and somewhat higher maximum outputs can be achieved with such a transformer.

An important aspect with such microstructures is the loss that occurs during power transmission. There are four types of loss in the micro-transformers according to the invention which are relevant here:

- resistive losses due to the conductor resistance

- magnetic flux losses - eddy current losses

- Magnetostriction and hysteresis losses

In order to minimize the resistive losses, the coil resistances must be kept as low as possible and the quality of the coil, i.e. the ratio L / R, should be as large as possible.

Magnetic flux losses can be influenced by the geometry of the coil and the core. To increase efficiency the magnetic circuit should be closed as far as possible. For this it is also advantageous to choose a core material with high permeability in order to limit the magnetic flux as far as possible in the core. A high permeability also increases the inductance of the coils.

Eddy current losses can expediently be minimized by choosing the core material with the lowest possible product of the specific conductivity and permeability, which increases the depth of penetration of the fields.

If this penetration depth is too small, the eddy currents may also be by a layer system with ^■ thin layers isolated from each other by insulating material, suppress the core, as is illustrated with respect to the ring core transformers. 1

Losses due to magnetostriction and hysteresis depend on the corresponding properties of the core material and are minimized by choosing a material with the smallest possible magnetostriction and coercivity.

Usable core materials are for example: Ni ₈₀ Fe ₂ θΛ CoZiRe, Co-Nb-Zr, CoFe, Fe-Cr-Ta-N, Fe-Hf-C, Fe (sputtered), VAC Permenorm, VAC Vitrovac, NiZn-ferrite, whereby this list is not exhaustive.

The advantages of the toroidal transformer are particularly its closed magnetic circuit with magnetization in the core plane and eddy currents outside the core plane. This is very favorable for the magnetic properties of the core, which has an advantageous effect on the losses in the core. In addition, possible eddy currents through thin layers of an insulation material, eg. B. Si0 ₂ , are suppressed in the core.

The design of the flat coil transformer is advantageous, in particular it does not require as many vias as the toroidal transformer, , cυ cυ ro ro P> P ¹

Cπ o Cπ o cπ o cn et cn J ^> ι cu P = Ξ NMS P- P) PP CΛ rr cn sQ CΛ Φ CΛ 3 CΛ o CΛ CL σ P et Hi rr et P ⁾

Φ cu (Ω ro P tr Φ o Φ P- φ P P P P O Ω P Ω P P- P Cυ Ω li Ω Φ fu ro P P H ro P

P 3 et cn Φ P- P- P P- cn PPP tr P rr Φ tr P tr rr tr CL tr P li P CU Φ cυ P EP rt 3 H sQ H rr CL sQ Φ cn s CL sQ sQ rr u sQ Φ P- cn Hl cn Φ ii P ¹ et: ü Hi P- Hi ro

£ Φ P- ro Φ Φ Φ et φ Φ Φ P ⁾ cn Ω rr Cυ et P, p- P P- H ¹ tr Cυ OO ro n et P tr CL H ü Z cn 3 P- £ "rr Φ m tr H Ω H P- φ P φ P- ro P <! P. cn CΛ P P- Φ Φ * φ cu cu cn cυ et PH Φ cu tr cu P) tr sQ EP Ω H CL P- o P> Hi ro

Ω Ω CL et PP P- P- P 3 φ et P- P Φ ro P r + Φ et Φ tr 3 PP o 3 tr rr φ CL o sQ rr Hi et P Cυ φ ιq PP cn P d-> P- tr tr Ω li

H Cu 3 P- Φ £ ω ii • Φ et P- P li cn rr P CΛ H Cυ Φ o Ω tr P- Φ tα rr CL cn

PP ¹ CΛ rr P- P ιq H tr ¹ φ cn P sQ r + cυ HP Φ Φ cn P- PP - _* tr O: P P- P- & ro P- cn rr S rr? tr φ cn φ φ P- O Φ POP P- P ⁾ Ω cn Hi tr UP Hi rr li P cn P P- ^ P> cn cn • P- P li Φ cn OP ι et P ^J tr et sQ p N φ P sQ r O P- P ¹ CL r P - CL O et Ω> et Φ P- et cn H P- ro P- Cυ Φ ti p ro li cn H - HP p- φ sQ HP P- rr H rr ö P Φ Λ Ω P Φ O CL? 3 CΛ P ¹ Φ tr r Hi P- φ O P- CL cn Ω N

P- cn O P Φ H cu H o cn H £ tr φ P P P CL P- rt P- H Φ cu ιq Φ E Ω Φ P- rr P

P cυ et CL cu rr P- P. Hi • d σ Φ 3 Φ CL P cn φ φ P P cu P cn rr t → H Φ f H Ω •

Φ P li <Hi φ rr p: 1 P li cu P cn cn cn li P Φ Ω cn φ tr P P tr cn

P O Cυ p: O o tr rr PJ w CL et cn ιq O tr sQ rr Φ ^ P- P>: cu P et td φ

H Hi tr P 1 Φ? H et cu Φ o cn ZP Λ cu ω rr CL P P- cn P ^ SP ^ q P ¹ ro P-

Cπ PL O ro .fc. _^ P o P et P 1% P- PP li et% Φ CL ιq et et P- Hi φ P- cn P

P ¹ P ü CL P ¹ Φ 3 P Φ et Q Φ CL cυ Φ ti tr Φ cn P- H • PPP Ω o ro

P φ tr P 3 sQ P Φ o Φ li φ cn P- Ω et cn Φ P 3 CL CL tr P H

P- PO ro HN Φ et cn P- P rr CL HPNN et CΛ tr ro rr Cυ P- Cπ ιq P ⁾ P P- φ CL

P ιq P p- P <! Hi <! et cυ: Φ P z Z H et P P • P P cn P P φ P- CL ro m

<-r rr P CΛ o li NO Φ P ⁾ PP g CL P- p- Cυ • P- ro Hi φ Φ CL ^ q P Φ li ro φ P- Cu Φ Ω <! H et PH li ιq; r cn p- cn cn et cn H P- P- tr

PN cu tr Hi cu li Φ tr rr P- tr Ω SP cn φ cn ü ro ü ιq P ^< r rr φ N 3 3 tr φ <-r φ K? R CL Ω Ω ω α Ω cn φ P Ω Φ NX rt CΛ

H rr Φ Cυ H P- S Φ tr P- cu et Φ σ <! p- φ P- PP ¹ cn sQ p Φ φ P P-:. -. POH φ φ cυ Φ φ tr CL P P- et tr li P- o Φ φ P- Φ rr et O et P P- p- et EP HP et PPPP cu Φ φ t ^ Φ Φ φ ro 3 H> ü PH cn P Ü PP CL Φ P • Ü S ιq SH 3 H Ü. P- φ 3 ro φ et

<-r φ rr • d P sQ Φ M φ φ z φ rr PJ P- CL ta Φ £ et o Hi P P ro P P Φ P

• 3 ii sQ Φ tr P- P ü φ r J ^ φ α Hi? Φ p O cn P- P ιq CΛ et P- φ cn p- P

P- Φ cn P Φ P li Cn ιq P- OHP cn H rr et P φ P ii P 3 3 <P- ¹ ιq

^ 1 P) cn O CU LP cn φ CΛ CL ZH Φ o rr CL Φ et Q ιq tr P ⁾ CL P- P- P>: O φ

Φ n rr rr P Φ Hi cυ P- Ω Φ P- <1 Cu P = rr CΛ φ P P Φ φ CΛ Hi P ^ rr u cn P s:

H 1 • Φ O cu rr P tr P H o et ιq tr H T3 P Φ Φ> &. P et O P P - CΛ P- N Φ

P cn P H z t i φ cu CL H φ Φ Φ Cu P ro et ii P cυ p: H sQ CU P O rr ro φ P

Φ Φ CL CL φ « _* ? sQ CL ω H Hi ¹ ii P tr Cu 4-> cn Ω et P * ^• > ü p- P- li tr P Φ P P- cn CΛ et cu Φ 1 cυ o Φ P cn P cu Cυ φ et ιq tr Φ NP sQ ~ cυ: Ω P rr Hi Ω PP CL cn Ω 3 CL PP φ QPP li φ cn H Φ ZP et Φ

KP tr ^• tr ¹ P φ U Φ rr PPU φ P- et P-. &> SQ P- Hi cn P ^J J Φ 3 TS P cu sQ H u tn Φ sQ p>PP> cu sQ • CΛ tr ü Φ Φ P ¹ <! cn PQ P- ro P- Cυ: P πd rr cn * L

P Φ tr p- Φ cn P CΛ cn Φ Ω O 1 • υ CL (ϋ φ P EP H> ~ i φ Φ

P P- rt »fc. Φ et CU PP Λ CΛ cn HP φ tr sQ u Φ Φ Φ OP) tr P. H P- cn Φ P o CΛ CΛ ü PP P- P- Ω Ω p- P ¹ PMP 3 P- Φ PHP tr rr ro P- P

Cu o li P Ω P- P o P cn rt tr rr P P- P P- P cn CΛ et P ¹ P- P- ro> τ) N

P sQ ιq tr P ¹ P- sQ H P- 1 cu Cu φ P fu CΛ CL CL Ω li φ O 3 Φ

Ω 3 P- cn u cυ P- CΛ cn CL tr PQ sQ Φ P P- Φ φ t Φ tr Cυ 3 P cn CU ¹ tr P- CΛ P- N et cu P Φ P- φ et et 3 Φ Ω rr P cυ H cu Hi Φ rö P- Ω P et et φ <! rr P- PP w ^ tr PP P- PP ιq tr P- P- ¹ P "OU P- Ω rr φ tr H Cu P p Cυ OPP ⁾ fU: PP rr CΛ cυ N CΛ tr et tr 3 P tr CΛ

P- sQ C σ PP 3 P ii ιq P cn P ιq sQ φ ≤ P ¹ Cυ P- z Φ OP Φ Φ sQ • CΛ φ φ P- P- P- sQ ~ »CL PO cn cn cn P- ö Φ <PP cυ P- φ li P P- H «ü P Ω ü φ φ P cn Φ P rr Φ cυ Cu P P- HP) Hi 3 cn <-r P- tr sQ P Φ φ Φ ro P ¹ tr

P- CL Ω> t-> Φ P- P cn Φ CL P P cu φ 1 P 1 φ rr Φ cn ro P- ii H φ P-

CL sQ sQ P tr 00 P- P P li cυ O O P P- CL 3 φ 1 Cu rr P P cu P Ω

P- ti Φ P P φ sQ cn H H P. 1 φ p- H P Φ P- 1 et 1 rr

Φ φ 1 ιq φ 3 cn C CL φ li et φ l 1 et P P- 1

1 1 1 H cn 1 <!

Control can be arranged on the same side of the substrate. There must only be galvanic isolation between the control and evaluation electronics and between the coils.

claims

1. Microtrafo that can be integrated into an IC housing, is arranged on a substrate (9, 23) made of a semiconductor material and has at least two coils (2,

3, 28, 29) and a core (4, 24) magnetically coupling the coils, each coil consisting of a lower and an upper coil part (5, 6, 26, 27 and 13, 14, 32, 33), which consist of one or more coil conductor sections (6, 7, 15, 16, 30, 31, 34, 35) and which are in contact with one another to form the respective coil (2, 3, 28, 29), the the two upper and the two lower coil parts of the two coils lie essentially in one plane and are arranged such that the resulting coils (2, 3) or the two coil parts (26, 27, 32, 33) themselves are wound into one another.

2. Microtrafo according to claim 1, characterized in that a core in the form of a toroidal core (4) is formed with coil sections (5, 6, 13, 14) arranged above and below, the essentially straight conductor sections (7, 8, 15, 16) of each coil part run essentially radially outwards and the conductor sections (7, 8, 15, 16) of the two coil parts are arranged alternately on one plane, and the inner and outer ends of the two coil parts (5, 14, 6, 13) of a coil (2, 3) are connected to one another.

3. Microtrafo according to claim 2, so that the toroidal core (4) consists of several layers insulated from one another.

4. Microtrafo according to claim 2 or 3, characterized in that one the annular core (4) against the coils (2, 3) and the coils (2, 3) against each other insulating (20) is provided, in which the Through-contacting of the coil parts (5, 6, 13, 14) serving and positioned according to the position of the lower and upper ends of the conductor sections (7, 8, 15, 16) are provided.

5. Microtrafo according to one of claims 2 to 4, d a d u r c h g e k e n n z e i c h n e t that a shielding layer (19) provided on the substrate (9) is provided made of magnetic material.

6. Microtrafo according to one of claims 2 to 5, d a d u r c h g e k e n n z e i c h n e t that a top-side shielding layer (21) is provided made of magnetic material.

7. Microtrafo according to claim 1, characterized in that the coil parts (26, 27, 32, 33) are designed as flat coils whose one-piece conductor sections (30, 31, 34, 35) wind from the outside inwards, the inner ends of the contact is made with each of the two coil parts (26, 33 and 27, 32) which form a coil (28, 29) and are located one above the other.

8. Microtrafo according to claim 7, d a d u r c h g e - k e n n z e i c h n e t that the conductor sections

(30, 31, 34, 35) spiral inwards, or are designed as essentially rectangular loops.

9. Microtrafo according to claim 7 or 8, so that the core (24) covers the coil parts (26, 27, 32, 33) at least on the top and bottom.

10. Microtrafo according to claim 9, dadurchge - indicates that the core (24) is closed at least on one side, preferably on several sides. 11. Microtrafo according to one of claims 8 to 10, characterized in that the core has a core section arranged between the coil parts.

12. Microtrafo according to one of claims 7 to 11, characterized in that the core (24) against the coils (28, 29) and the coils (28, 29) against each other insulating (25) is provided, in which Insulation (25) and, if appropriate, the vias serving the central core section of the through-connection of the coil parts (26, 27, 32, 33) and positioned according to the position of the inner ends of the conductor sections (30, 31, 34, 35) are provided.

13. Microtrafo according to one of the preceding claims, d a d u r c h g e k e n n z e i c h n e t that the substrate (9, 23) is a silicon substrate.

14. Microtrafo according to one of the preceding claims, d a d u r c h g e k e n n z e i c h n e t that it is integrated in an IC housing.

15. A circuit arrangement comprising a microtrafo formed on a semiconductor substrate according to one of claims 1 to 13, wherein on the substrate (42) there is further provided a circuit (43) which controls the microtrafo (41) and which is connected to the microtrafo ( 41) is contacted.

16. The circuit arrangement as claimed in claim 14, so that a further circuit to be supplied via the microtrafo, which is galvanically separated from the microtrafo, is also formed on the substrate.

17. Circuit arrangement according to claim 14 or 15, characterized in that it is integrated in an IC housing (44). 18. Circuit arrangement according to claim 14, characterized in that a further circuit (48) to be supplied via the microtrafo (41) is formed on a further semiconductor substrate (47) and is galvanically separated from the microtrafo (41), both substrates (42 , 47) are integrated in a common IC housing (50).