WO2001098830A3 - Modification of mask layout data to improve mask fidelity - Google Patents
Modification of mask layout data to improve mask fidelity Download PDFInfo
- Publication number
- WO2001098830A3 WO2001098830A3 PCT/US2001/012853 US0112853W WO0198830A3 WO 2001098830 A3 WO2001098830 A3 WO 2001098830A3 US 0112853 W US0112853 W US 0112853W WO 0198830 A3 WO0198830 A3 WO 0198830A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- mask
- layout data
- fidelity
- improve
- modification
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
- G03F7/70441—Optical proximity correction [OPC]
Abstract
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE60101481T DE60101481T2 (en) | 2000-06-16 | 2001-04-19 | MODIFYING A MASK'S LAYOUT DATA TO IMPROVE THE GENERATED PATTERN |
AU2001257130A AU2001257130A1 (en) | 2000-06-16 | 2001-04-19 | Modification of mask layout data to improve mask fidelity |
EP01930611A EP1290496B1 (en) | 2000-06-16 | 2001-04-19 | Modification of mask layout data to improve mask fidelity |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/596,954 US6444373B1 (en) | 2000-06-16 | 2000-06-16 | Modification of mask layout data to improve mask fidelity |
US09/596,954 | 2000-06-16 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2001098830A2 WO2001098830A2 (en) | 2001-12-27 |
WO2001098830A3 true WO2001098830A3 (en) | 2002-07-25 |
Family
ID=24389425
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2001/012853 WO2001098830A2 (en) | 2000-06-16 | 2001-04-19 | Modification of mask layout data to improve mask fidelity |
Country Status (5)
Country | Link |
---|---|
US (2) | US6444373B1 (en) |
EP (1) | EP1290496B1 (en) |
AU (1) | AU2001257130A1 (en) |
DE (1) | DE60101481T2 (en) |
WO (1) | WO2001098830A2 (en) |
Families Citing this family (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4580529B2 (en) * | 2000-09-26 | 2010-11-17 | 大日本印刷株式会社 | Semiconductor circuit design pattern data correction method, photomask using corrected design pattern data, photomask inspection method, and photomask inspection pattern data preparation method |
US6673638B1 (en) * | 2001-11-14 | 2004-01-06 | Kla-Tencor Corporation | Method and apparatus for the production of process sensitive lithographic features |
US6691052B1 (en) * | 2002-01-30 | 2004-02-10 | Kla-Tencor Corporation | Apparatus and methods for generating an inspection reference pattern |
US7302672B2 (en) * | 2002-07-12 | 2007-11-27 | Cadence Design Systems, Inc. | Method and system for context-specific mask writing |
US7231628B2 (en) * | 2002-07-12 | 2007-06-12 | Cadence Design Systems, Inc. | Method and system for context-specific mask inspection |
EP1543451A4 (en) * | 2002-07-12 | 2010-11-17 | Cadence Design Systems Inc | Method and system for context-specific mask writing |
US6792592B2 (en) * | 2002-08-30 | 2004-09-14 | Numerical Technologies, Inc. | Considering mask writer properties during the optical proximity correction process |
JP4040515B2 (en) * | 2003-03-26 | 2008-01-30 | 株式会社東芝 | Mask setting, mask data creating method and pattern forming method |
US6973637B2 (en) * | 2003-05-12 | 2005-12-06 | Agere Systems Inc. | Process for the selective control of feature size in lithographic processing |
US7318214B1 (en) | 2003-06-19 | 2008-01-08 | Invarium, Inc. | System and method for reducing patterning variability in integrated circuit manufacturing through mask layout corrections |
US7024638B2 (en) * | 2003-07-14 | 2006-04-04 | Cadence Design Systems, Inc. | Method for creating patterns for producing integrated circuits |
JP2007521500A (en) * | 2003-07-14 | 2007-08-02 | カデンス デザイン システムズ, インコーポレイテッド | Method for creating a pattern for manufacturing an integrated circuit |
US7261982B2 (en) * | 2003-08-07 | 2007-08-28 | Jds Uniphase Corporation | Planar circuit optimization |
US7266800B2 (en) * | 2004-06-04 | 2007-09-04 | Invarium, Inc. | Method and system for designing manufacturable patterns that account for the pattern- and position-dependent nature of patterning processes |
JP2008516272A (en) * | 2004-10-05 | 2008-05-15 | トッパン、フォウタマスクス、インク | System and method for analyzing the shape of a photomask |
US7588868B2 (en) * | 2004-10-06 | 2009-09-15 | Cadence Design Systems, Inc. | Method and system for reducing the impact of across-wafer variations on critical dimension measurements |
US7345738B2 (en) * | 2004-12-03 | 2008-03-18 | Asml Netherlands B.V. | Certified cells and method of using certified cells for fabricating a device |
US7465525B2 (en) * | 2005-05-10 | 2008-12-16 | Lam Research Corporation | Reticle alignment and overlay for multiple reticle process |
US7539969B2 (en) * | 2005-05-10 | 2009-05-26 | Lam Research Corporation | Computer readable mask shrink control processor |
US7392503B2 (en) * | 2005-07-20 | 2008-06-24 | Winbond Electronics Corp. | Method of correcting mask pattern |
US20070143234A1 (en) * | 2005-12-16 | 2007-06-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and system for intelligent model-based optical proximity correction (OPC) |
WO2008078213A1 (en) * | 2006-12-21 | 2008-07-03 | Nxp B.V. | A method and system for identifying weak points in an integrated circuit design |
US20080241709A1 (en) * | 2007-04-02 | 2008-10-02 | Kent Nakagawa | System And Method For analyzing photomask Geometries |
JP5137444B2 (en) * | 2007-04-04 | 2013-02-06 | 株式会社日立ハイテクノロジーズ | OPC modeling construction method, information processing apparatus, and method for determining process conditions of semiconductor device |
DE102009007770A1 (en) * | 2009-02-05 | 2010-08-12 | Carl Zeiss Sms Gmbh | Corrective action determining method for electron beam lithographic mask writer, involves evaluating aerial image by test mask with respect to observation of tolerances based on test structures, and determining corrective action |
US8103984B1 (en) * | 2009-02-23 | 2012-01-24 | Cadence Design Systems, Inc. | System and method for compressed design phase contour data |
US7944545B2 (en) * | 2009-05-11 | 2011-05-17 | International Business Machines Corporation | High contrast lithographic masks |
CN103309150B (en) * | 2013-06-26 | 2015-06-17 | 上海华力微电子有限公司 | Processing method for layout data |
US9007719B1 (en) | 2013-10-23 | 2015-04-14 | Western Digital (Fremont), Llc | Systems and methods for using double mask techniques to achieve very small features |
WO2018125115A1 (en) * | 2016-12-29 | 2018-07-05 | Intel Corporation | Accounting for mask manufacturing infidelities in semiconductor devices |
US11435660B2 (en) * | 2017-11-22 | 2022-09-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | Photomask and method of fabricating a photomask |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5792581A (en) * | 1995-08-01 | 1998-08-11 | Sony Corporation | Method of correcting pattern data for drawing photomask to overcome proximity effects |
US5885747A (en) * | 1995-08-25 | 1999-03-23 | Kabushiki Kaisha Toshiba | Charged beam lithography method |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5600734A (en) * | 1991-10-04 | 1997-02-04 | Fujitsu Limited | Electron beam tester |
US5723233A (en) | 1996-02-27 | 1998-03-03 | Lsi Logic Corporation | Optical proximity correction method and apparatus |
US5740068A (en) | 1996-05-30 | 1998-04-14 | International Business Machines Corporation | Fidelity enhancement of lithographic and reactive-ion-etched images by optical proximity correction |
JP3551660B2 (en) * | 1996-10-29 | 2004-08-11 | ソニー株式会社 | Exposure pattern correction method, exposure pattern correction apparatus, and exposure method |
US5821014A (en) | 1997-02-28 | 1998-10-13 | Microunity Systems Engineering, Inc. | Optical proximity correction method for intermediate-pitch features using sub-resolution scattering bars on a mask |
US5858591A (en) | 1998-02-02 | 1999-01-12 | Taiwan Semiconductor Manufacturing Company Ltd. | Optical proximity correction during wafer processing through subfile bias modification with subsequent subfile merging |
JP2000020564A (en) * | 1998-06-29 | 2000-01-21 | Mitsubishi Electric Corp | Device for correcting layout pattern data, method for correcting layout pattern data, manufacture of semiconductor device using the method, and recording medium having recorded manufacturing program of semiconductor device thereon |
US6330708B1 (en) * | 1998-09-17 | 2001-12-11 | International Business Machines Corporation | Method for preparing command files for photomask production |
-
2000
- 2000-06-16 US US09/596,954 patent/US6444373B1/en not_active Expired - Lifetime
-
2001
- 2001-04-19 WO PCT/US2001/012853 patent/WO2001098830A2/en active IP Right Grant
- 2001-04-19 DE DE60101481T patent/DE60101481T2/en not_active Expired - Lifetime
- 2001-04-19 EP EP01930611A patent/EP1290496B1/en not_active Expired - Lifetime
- 2001-04-19 AU AU2001257130A patent/AU2001257130A1/en not_active Abandoned
-
2002
- 2002-06-20 US US10/175,923 patent/US6579651B2/en not_active Expired - Lifetime
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5792581A (en) * | 1995-08-01 | 1998-08-11 | Sony Corporation | Method of correcting pattern data for drawing photomask to overcome proximity effects |
US5885747A (en) * | 1995-08-25 | 1999-03-23 | Kabushiki Kaisha Toshiba | Charged beam lithography method |
Non-Patent Citations (3)
Title |
---|
JONCKHEERE R A ET AL: "Optical proximity correction: mask pattern-generation challenges", MICROELECTRONIC ENGINEERING, ELSEVIER PUBLISHERS BV., AMSTERDAM, NL, vol. 30, no. 1, 1996, pages 115 - 118, XP004003044, ISSN: 0167-9317 * |
OTTO O W ET AL: "INTEGRATING PROXIMITY EFFECTS CORRECTIONS WITH PHOTOMASK DATA PREPARATION", OPTICAL / LASER MICROLITHOGRAPHY 8. SANTA CLARA, FEB. 22 - 24, 1995, PROCEEDINGS OF SPIE. OPTICAL / LASER MICROLITHOGRAPHY, BELLINGHAM, SPIE, US, VOL. VOL. 2440, PAGE(S) 184-191, ISBN: 0-8194-1788-2, XP000988729 * |
TRAN A ET AL: "Application of image processing software to characterize the photomask key parameters for future technologies", PHOTOMASK AND X-RAY MASK TECHNOLOGY IV, KAWASAKI, JAPAN, 17-18 APRIL 1997, PROCEEDINGS OF THE SPIE - THE INTERNATIONAL SOCIETY FOR OPTICAL ENGINEERING, 1997, SPIE-INT. SOC. OPT. ENG, USA, PAGE(S) 423 - 432, ISSN: 0277-786X, XP008002564 * |
Also Published As
Publication number | Publication date |
---|---|
EP1290496B1 (en) | 2003-12-10 |
EP1290496A2 (en) | 2003-03-12 |
US20020160281A1 (en) | 2002-10-31 |
WO2001098830A2 (en) | 2001-12-27 |
DE60101481D1 (en) | 2004-01-22 |
US6579651B2 (en) | 2003-06-17 |
AU2001257130A1 (en) | 2002-01-02 |
US6444373B1 (en) | 2002-09-03 |
DE60101481T2 (en) | 2004-10-14 |
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