WO2001095378A3 - Methods for forming and integrated circuit structures containing ruthenium and tungsten containing layers - Google Patents
Methods for forming and integrated circuit structures containing ruthenium and tungsten containing layers Download PDFInfo
- Publication number
- WO2001095378A3 WO2001095378A3 PCT/US2001/018585 US0118585W WO0195378A3 WO 2001095378 A3 WO2001095378 A3 WO 2001095378A3 US 0118585 W US0118585 W US 0118585W WO 0195378 A3 WO0195378 A3 WO 0195378A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- electrically conductive
- ruthenium
- conductive layer
- ambient
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/82—Electrodes with an enlarged surface, e.g. formed by texturisation
- H01L28/84—Electrodes with an enlarged surface, e.g. formed by texturisation being a rough surface, e.g. using hemispherical grains
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/60—Electrodes
- H01L28/65—Electrodes comprising a noble metal or a noble metal oxide, e.g. platinum (Pt), ruthenium (Ru), ruthenium dioxide (RuO2), iridium (Ir), iridium dioxide (IrO2)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02183—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing tantalum, e.g. Ta2O5
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31604—Deposition from a gas or vapour
- H01L21/31637—Deposition of Tantalum oxides, e.g. Ta2O5
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
Abstract
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP01942105.6A EP1297562B1 (en) | 2000-06-08 | 2001-06-07 | Methods for forming and integrated circuit structures containing ruthenium containing layers |
KR1020027016729A KR100746192B1 (en) | 2000-06-08 | 2001-06-07 | Methods for forming and integrated circuit structures containing ruthenium and tungsten containing layers |
JP2002502821A JP4216585B2 (en) | 2000-06-08 | 2001-06-07 | Method for forming a layer containing ruthenium and tungsten, and integrated circuit structure including these layers |
AU2001275398A AU2001275398A1 (en) | 2000-06-08 | 2001-06-07 | Methods for forming and integrated circuit structures containing ruthenium and tungsten containing layers |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/590,795 US7253076B1 (en) | 2000-06-08 | 2000-06-08 | Methods for forming and integrated circuit structures containing ruthenium and tungsten containing layers |
US09/590,795 | 2000-06-08 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2001095378A2 WO2001095378A2 (en) | 2001-12-13 |
WO2001095378A3 true WO2001095378A3 (en) | 2002-06-13 |
Family
ID=24363746
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2001/018585 WO2001095378A2 (en) | 2000-06-08 | 2001-06-07 | Methods for forming and integrated circuit structures containing ruthenium and tungsten containing layers |
Country Status (7)
Country | Link |
---|---|
US (5) | US7253076B1 (en) |
EP (1) | EP1297562B1 (en) |
JP (1) | JP4216585B2 (en) |
KR (1) | KR100746192B1 (en) |
CN (2) | CN1270352C (en) |
AU (1) | AU2001275398A1 (en) |
WO (1) | WO2001095378A2 (en) |
Families Citing this family (144)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6974766B1 (en) * | 1998-10-01 | 2005-12-13 | Applied Materials, Inc. | In situ deposition of a low κ dielectric layer, barrier layer, etch stop, and anti-reflective coating for damascene application |
US6620723B1 (en) * | 2000-06-27 | 2003-09-16 | Applied Materials, Inc. | Formation of boride barrier layers using chemisorption techniques |
US7405158B2 (en) | 2000-06-28 | 2008-07-29 | Applied Materials, Inc. | Methods for depositing tungsten layers employing atomic layer deposition techniques |
US6936538B2 (en) | 2001-07-16 | 2005-08-30 | Applied Materials, Inc. | Method and apparatus for depositing tungsten after surface treatment to improve film characteristics |
US6551929B1 (en) | 2000-06-28 | 2003-04-22 | Applied Materials, Inc. | Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques |
US7101795B1 (en) * | 2000-06-28 | 2006-09-05 | Applied Materials, Inc. | Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer |
US7964505B2 (en) | 2005-01-19 | 2011-06-21 | Applied Materials, Inc. | Atomic layer deposition of tungsten materials |
US7732327B2 (en) | 2000-06-28 | 2010-06-08 | Applied Materials, Inc. | Vapor deposition of tungsten materials |
US7112503B1 (en) | 2000-08-31 | 2006-09-26 | Micron Technology, Inc. | Enhanced surface area capacitor fabrication methods |
US6420230B1 (en) | 2000-08-31 | 2002-07-16 | Micron Technology, Inc. | Capacitor fabrication methods and capacitor constructions |
US7217615B1 (en) | 2000-08-31 | 2007-05-15 | Micron Technology, Inc. | Capacitor fabrication methods including forming a conductive layer |
US6617248B1 (en) | 2000-11-10 | 2003-09-09 | Micron Technology, Inc. | Method for forming a ruthenium metal layer |
US7378719B2 (en) * | 2000-12-20 | 2008-05-27 | Micron Technology, Inc. | Low leakage MIM capacitor |
US6524867B2 (en) * | 2000-12-28 | 2003-02-25 | Micron Technology, Inc. | Method for forming platinum-rhodium stack as an oxygen barrier |
US6518610B2 (en) | 2001-02-20 | 2003-02-11 | Micron Technology, Inc. | Rhodium-rich oxygen barriers |
RU2269545C2 (en) * | 2001-02-23 | 2006-02-10 | Дзе Гейтс Корпорейшн | Method for directly binding rubber to at least second substrate and article made this way |
US9076843B2 (en) | 2001-05-22 | 2015-07-07 | Novellus Systems, Inc. | Method for producing ultra-thin tungsten layers with improved step coverage |
JP3863391B2 (en) * | 2001-06-13 | 2006-12-27 | Necエレクトロニクス株式会社 | Semiconductor device |
US6849545B2 (en) * | 2001-06-20 | 2005-02-01 | Applied Materials, Inc. | System and method to form a composite film stack utilizing sequential deposition techniques |
US6495428B1 (en) * | 2001-07-11 | 2002-12-17 | Micron Technology, Inc. | Method of making a capacitor with oxygenated metal electrodes and high dielectric constant materials |
US7211144B2 (en) * | 2001-07-13 | 2007-05-01 | Applied Materials, Inc. | Pulsed nucleation deposition of tungsten layers |
US20070009658A1 (en) * | 2001-07-13 | 2007-01-11 | Yoo Jong H | Pulse nucleation enhanced nucleation technique for improved step coverage and better gap fill for WCVD process |
JP2005518088A (en) | 2001-07-16 | 2005-06-16 | アプライド マテリアルズ インコーポレイテッド | Formation of tungsten composite film |
US20030020122A1 (en) * | 2001-07-24 | 2003-01-30 | Joo Jae Hyun | Methods of forming integrated circuit electrodes and capacitors by wrinkling a layer that includes a noble metal oxide, and integrated circuit electrodes and capacitors fabricated thereby |
US7700454B2 (en) | 2001-07-24 | 2010-04-20 | Samsung Electronics Co., Ltd. | Methods of forming integrated circuit electrodes and capacitors by wrinkling a layer that includes a high percentage of impurities |
US8110489B2 (en) | 2001-07-25 | 2012-02-07 | Applied Materials, Inc. | Process for forming cobalt-containing materials |
US20090004850A1 (en) | 2001-07-25 | 2009-01-01 | Seshadri Ganguli | Process for forming cobalt and cobalt silicide materials in tungsten contact applications |
US20080268635A1 (en) * | 2001-07-25 | 2008-10-30 | Sang-Ho Yu | Process for forming cobalt and cobalt silicide materials in copper contact applications |
US9051641B2 (en) | 2001-07-25 | 2015-06-09 | Applied Materials, Inc. | Cobalt deposition on barrier surfaces |
KR100464404B1 (en) * | 2001-07-27 | 2005-01-03 | 삼성전자주식회사 | Method for manufacturing a semiconductor device |
US6458652B1 (en) * | 2001-08-20 | 2002-10-01 | Micron Technology, Inc. | Methods of forming capacitor electrodes |
TW589684B (en) * | 2001-10-10 | 2004-06-01 | Applied Materials Inc | Method for depositing refractory metal layers employing sequential deposition techniques |
US7780785B2 (en) | 2001-10-26 | 2010-08-24 | Applied Materials, Inc. | Gas delivery apparatus for atomic layer deposition |
US6916398B2 (en) | 2001-10-26 | 2005-07-12 | Applied Materials, Inc. | Gas delivery apparatus and method for atomic layer deposition |
US6953730B2 (en) | 2001-12-20 | 2005-10-11 | Micron Technology, Inc. | Low-temperature grown high quality ultra-thin CoTiO3 gate dielectrics |
US6809026B2 (en) * | 2001-12-21 | 2004-10-26 | Applied Materials, Inc. | Selective deposition of a barrier layer on a metal film |
US6670071B2 (en) * | 2002-01-15 | 2003-12-30 | Quallion Llc | Electric storage battery construction and method of manufacture |
US6794704B2 (en) | 2002-01-16 | 2004-09-21 | Micron Technology, Inc. | Method for enhancing electrode surface area in DRAM cell capacitors |
US6911391B2 (en) | 2002-01-26 | 2005-06-28 | Applied Materials, Inc. | Integration of titanium and titanium nitride layers |
US6998014B2 (en) | 2002-01-26 | 2006-02-14 | Applied Materials, Inc. | Apparatus and method for plasma assisted deposition |
US6827978B2 (en) * | 2002-02-11 | 2004-12-07 | Applied Materials, Inc. | Deposition of tungsten films |
US6833161B2 (en) | 2002-02-26 | 2004-12-21 | Applied Materials, Inc. | Cyclical deposition of tungsten nitride for metal oxide gate electrode |
US20030159653A1 (en) * | 2002-02-28 | 2003-08-28 | Dando Ross S. | Manifold assembly for feeding reactive precursors to substrate processing chambers |
US6720027B2 (en) * | 2002-04-08 | 2004-04-13 | Applied Materials, Inc. | Cyclical deposition of a variable content titanium silicon nitride layer |
US6846516B2 (en) * | 2002-04-08 | 2005-01-25 | Applied Materials, Inc. | Multiple precursor cyclical deposition system |
US7279432B2 (en) | 2002-04-16 | 2007-10-09 | Applied Materials, Inc. | System and method for forming an integrated barrier layer |
US7105065B2 (en) * | 2002-04-25 | 2006-09-12 | Micron Technology, Inc. | Metal layer forming methods and capacitor electrode forming methods |
US7160577B2 (en) | 2002-05-02 | 2007-01-09 | Micron Technology, Inc. | Methods for atomic-layer deposition of aluminum oxides in integrated circuits |
US6896730B2 (en) * | 2002-06-05 | 2005-05-24 | Micron Technology, Inc. | Atomic layer deposition apparatus and methods |
US6821347B2 (en) * | 2002-07-08 | 2004-11-23 | Micron Technology, Inc. | Apparatus and method for depositing materials onto microelectronic workpieces |
US7221586B2 (en) | 2002-07-08 | 2007-05-22 | Micron Technology, Inc. | Memory utilizing oxide nanolaminates |
US6838125B2 (en) * | 2002-07-10 | 2005-01-04 | Applied Materials, Inc. | Method of film deposition using activated precursor gases |
US6897106B2 (en) * | 2002-08-16 | 2005-05-24 | Samsung Electronics Co., Ltd. | Capacitor of semiconductor memory device that has composite Al2O3/HfO2 dielectric layer and method of manufacturing the same |
KR100450681B1 (en) * | 2002-08-16 | 2004-10-02 | 삼성전자주식회사 | Capacitor of semiconductor memory device and manufacturing method thereof |
US7199023B2 (en) | 2002-08-28 | 2007-04-03 | Micron Technology, Inc. | Atomic layer deposited HfSiON dielectric films wherein each precursor is independendently pulsed |
US20040065255A1 (en) * | 2002-10-02 | 2004-04-08 | Applied Materials, Inc. | Cyclical layer deposition system |
US6821563B2 (en) | 2002-10-02 | 2004-11-23 | Applied Materials, Inc. | Gas distribution system for cyclical layer deposition |
US6916374B2 (en) * | 2002-10-08 | 2005-07-12 | Micron Technology, Inc. | Atomic layer deposition methods and atomic layer deposition tools |
US7262133B2 (en) * | 2003-01-07 | 2007-08-28 | Applied Materials, Inc. | Enhancement of copper line reliability using thin ALD tan film to cap the copper line |
US7183186B2 (en) | 2003-04-22 | 2007-02-27 | Micro Technology, Inc. | Atomic layer deposited ZrTiO4 films |
US7335396B2 (en) * | 2003-04-24 | 2008-02-26 | Micron Technology, Inc. | Methods for controlling mass flow rates and pressures in passageways coupled to reaction chambers and systems for depositing material onto microfeature workpieces in reaction chambers |
JP2007523994A (en) * | 2003-06-18 | 2007-08-23 | アプライド マテリアルズ インコーポレイテッド | Atomic layer deposition of barrier materials |
DE10330535A1 (en) * | 2003-07-07 | 2005-02-03 | Forschungszentrum Jülich GmbH | Production of a layer made from ferroelectric material used in the production of a ferroelectric capacitor comprises roughening a ferroelectric material layer on a surface and applying an electrode to the roughened surface |
US7440255B2 (en) * | 2003-07-21 | 2008-10-21 | Micron Technology, Inc. | Capacitor constructions and methods of forming |
US7235138B2 (en) * | 2003-08-21 | 2007-06-26 | Micron Technology, Inc. | Microfeature workpiece processing apparatus and methods for batch deposition of materials on microfeature workpieces |
US7344755B2 (en) * | 2003-08-21 | 2008-03-18 | Micron Technology, Inc. | Methods and apparatus for processing microfeature workpieces; methods for conditioning ALD reaction chambers |
US7422635B2 (en) * | 2003-08-28 | 2008-09-09 | Micron Technology, Inc. | Methods and apparatus for processing microfeature workpieces, e.g., for depositing materials on microfeature workpieces |
US7056806B2 (en) * | 2003-09-17 | 2006-06-06 | Micron Technology, Inc. | Microfeature workpiece processing apparatus and methods for controlling deposition of materials on microfeature workpieces |
US7282239B2 (en) * | 2003-09-18 | 2007-10-16 | Micron Technology, Inc. | Systems and methods for depositing material onto microfeature workpieces in reaction chambers |
US7323231B2 (en) * | 2003-10-09 | 2008-01-29 | Micron Technology, Inc. | Apparatus and methods for plasma vapor deposition processes |
US7581511B2 (en) * | 2003-10-10 | 2009-09-01 | Micron Technology, Inc. | Apparatus and methods for manufacturing microfeatures on workpieces using plasma vapor processes |
US7647886B2 (en) * | 2003-10-15 | 2010-01-19 | Micron Technology, Inc. | Systems for depositing material onto workpieces in reaction chambers and methods for removing byproducts from reaction chambers |
US7258892B2 (en) * | 2003-12-10 | 2007-08-21 | Micron Technology, Inc. | Methods and systems for controlling temperature during microfeature workpiece processing, e.g., CVD deposition |
US7906393B2 (en) | 2004-01-28 | 2011-03-15 | Micron Technology, Inc. | Methods for forming small-scale capacitor structures |
US7067438B2 (en) * | 2004-02-19 | 2006-06-27 | Micron Technology, Inc. | Atomic layer deposition method of forming an oxide comprising layer on a substrate |
US7199001B2 (en) * | 2004-03-29 | 2007-04-03 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of forming MIM capacitor electrodes |
US20050249873A1 (en) * | 2004-05-05 | 2005-11-10 | Demetrius Sarigiannis | Apparatuses and methods for producing chemically reactive vapors used in manufacturing microelectronic devices |
US8133554B2 (en) | 2004-05-06 | 2012-03-13 | Micron Technology, Inc. | Methods for depositing material onto microfeature workpieces in reaction chambers and systems for depositing materials onto microfeature workpieces |
US7699932B2 (en) * | 2004-06-02 | 2010-04-20 | Micron Technology, Inc. | Reactors, systems and methods for depositing thin films onto microfeature workpieces |
US7170174B2 (en) * | 2004-08-24 | 2007-01-30 | Micron Technology, Inc. | Contact structure and contact liner process |
US7081421B2 (en) | 2004-08-26 | 2006-07-25 | Micron Technology, Inc. | Lanthanide oxide dielectric layer |
US7494939B2 (en) | 2004-08-31 | 2009-02-24 | Micron Technology, Inc. | Methods for forming a lanthanum-metal oxide dielectric layer |
US7429402B2 (en) * | 2004-12-10 | 2008-09-30 | Applied Materials, Inc. | Ruthenium as an underlayer for tungsten film deposition |
US7235501B2 (en) | 2004-12-13 | 2007-06-26 | Micron Technology, Inc. | Lanthanum hafnium oxide dielectrics |
US20060165873A1 (en) * | 2005-01-25 | 2006-07-27 | Micron Technology, Inc. | Plasma detection and associated systems and methods for controlling microfeature workpiece deposition processes |
US20060237138A1 (en) * | 2005-04-26 | 2006-10-26 | Micron Technology, Inc. | Apparatuses and methods for supporting microelectronic devices during plasma-based fabrication processes |
US7662729B2 (en) | 2005-04-28 | 2010-02-16 | Micron Technology, Inc. | Atomic layer deposition of a ruthenium layer to a lanthanide oxide dielectric layer |
US20060261441A1 (en) * | 2005-05-23 | 2006-11-23 | Micron Technology, Inc. | Process for forming a low carbon, low resistance metal film during the manufacture of a semiconductor device and systems including same |
CN100364048C (en) * | 2005-07-07 | 2008-01-23 | 友达光电股份有限公司 | Manufacturing method of metal/insulation layer/metal structure |
US7927948B2 (en) | 2005-07-20 | 2011-04-19 | Micron Technology, Inc. | Devices with nanocrystals and methods of formation |
US20070099422A1 (en) * | 2005-10-28 | 2007-05-03 | Kapila Wijekoon | Process for electroless copper deposition |
KR101019293B1 (en) * | 2005-11-04 | 2011-03-07 | 어플라이드 머티어리얼스, 인코포레이티드 | Apparatus and process for plasma-enhanced atomic layer deposition |
US20070134861A1 (en) * | 2005-12-14 | 2007-06-14 | Jin-Ping Han | Semiconductor devices and methods of manufacture thereof |
KR100823034B1 (en) * | 2005-12-29 | 2008-04-17 | 동부일렉트로닉스 주식회사 | Capacitor in semiconductor device and manufacturing method thereof |
TWI283475B (en) * | 2005-12-29 | 2007-07-01 | Ind Tech Res Inst | Bottom electrode of a metal-insulator-metal capacitor and method of manufacturing the same |
US20070160756A1 (en) * | 2006-01-07 | 2007-07-12 | Helmuth Treichel | Apparatus and method for the deposition of ruthenium containing films |
US7709402B2 (en) | 2006-02-16 | 2010-05-04 | Micron Technology, Inc. | Conductive layers for hafnium silicon oxynitride films |
WO2008005892A2 (en) * | 2006-06-30 | 2008-01-10 | Applied Materials, Inc. | Nanocrystal formation |
US7790360B2 (en) | 2007-03-05 | 2010-09-07 | Micron Technology, Inc. | Methods of forming multiple lines |
US8889507B2 (en) * | 2007-06-20 | 2014-11-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | MIM capacitors with improved reliability |
KR101544198B1 (en) * | 2007-10-17 | 2015-08-12 | 한국에이에스엠지니텍 주식회사 | Method of depositing ruthenium film |
JP5608315B2 (en) * | 2007-12-03 | 2014-10-15 | ピーエスフォー ルクスコ エスエイアールエル | Capacitor electrode and manufacturing method thereof, capacitor |
US8012532B2 (en) | 2007-12-18 | 2011-09-06 | Micron Technology, Inc. | Methods of making crystalline tantalum pentoxide |
US20090307026A1 (en) * | 2008-06-10 | 2009-12-10 | International Business Machines Corporation | Priority-based system for netting available coverage |
WO2010088684A2 (en) | 2009-02-02 | 2010-08-05 | Space Charge, LLC | Capacitor using carbon-based extensions |
JP5150534B2 (en) * | 2009-03-06 | 2013-02-20 | 信越ポリマー株式会社 | Coverlay film, method for producing the same, and flexible printed wiring board |
US8623733B2 (en) * | 2009-04-16 | 2014-01-07 | Novellus Systems, Inc. | Methods for depositing ultra thin low resistivity tungsten film for small critical dimension contacts and interconnects |
US9159571B2 (en) | 2009-04-16 | 2015-10-13 | Lam Research Corporation | Tungsten deposition process using germanium-containing reducing agent |
US9159551B2 (en) | 2009-07-02 | 2015-10-13 | Micron Technology, Inc. | Methods of forming capacitors |
US10256142B2 (en) | 2009-08-04 | 2019-04-09 | Novellus Systems, Inc. | Tungsten feature fill with nucleation inhibition |
US8709948B2 (en) * | 2010-03-12 | 2014-04-29 | Novellus Systems, Inc. | Tungsten barrier and seed for copper filled TSV |
US9129945B2 (en) * | 2010-03-24 | 2015-09-08 | Applied Materials, Inc. | Formation of liner and barrier for tungsten as gate electrode and as contact plug to reduce resistance and enhance device performance |
US8236645B1 (en) * | 2011-02-07 | 2012-08-07 | GlobalFoundries, Inc. | Integrated circuits having place-efficient capacitors and methods for fabricating the same |
US8524599B2 (en) * | 2011-03-17 | 2013-09-03 | Micron Technology, Inc. | Methods of forming at least one conductive element and methods of forming a semiconductor structure |
WO2013081477A1 (en) | 2011-11-30 | 2013-06-06 | Zinniatek Limited | A roofing, cladding or siding product, its manufacture and its use as part of a solar energy recovery system |
WO2013081478A1 (en) * | 2011-11-30 | 2013-06-06 | Zinniatek Limited | Photovoltaic systems |
WO2013148880A1 (en) | 2012-03-27 | 2013-10-03 | Novellus Systems, Inc. | Tungsten feature fill |
US10381266B2 (en) | 2012-03-27 | 2019-08-13 | Novellus Systems, Inc. | Tungsten feature fill with nucleation inhibition |
US11437269B2 (en) | 2012-03-27 | 2022-09-06 | Novellus Systems, Inc. | Tungsten feature fill with nucleation inhibition |
KR101990051B1 (en) * | 2012-08-31 | 2019-10-01 | 에스케이하이닉스 주식회사 | Semiconductor device with fluorine free tungsten barrier layer and method for fabricating the same |
US8853080B2 (en) | 2012-09-09 | 2014-10-07 | Novellus Systems, Inc. | Method for depositing tungsten film with low roughness and low resistivity |
US9153486B2 (en) | 2013-04-12 | 2015-10-06 | Lam Research Corporation | CVD based metal/semiconductor OHMIC contact for high volume manufacturing applications |
AU2014269204A1 (en) | 2013-05-23 | 2015-12-10 | Zinniatek Limited | Photovoltaic systems |
US9589808B2 (en) | 2013-12-19 | 2017-03-07 | Lam Research Corporation | Method for depositing extremely low resistivity tungsten |
EP3114415B1 (en) | 2014-03-07 | 2023-06-28 | Zinniatek Limited | Solar thermal roofing system |
JP2015228191A (en) * | 2014-06-03 | 2015-12-17 | カシオ計算機株式会社 | Content output system, content output method, content output program and communication terminal |
US9349637B2 (en) | 2014-08-21 | 2016-05-24 | Lam Research Corporation | Method for void-free cobalt gap fill |
US9748137B2 (en) | 2014-08-21 | 2017-08-29 | Lam Research Corporation | Method for void-free cobalt gap fill |
US9997405B2 (en) | 2014-09-30 | 2018-06-12 | Lam Research Corporation | Feature fill with nucleation inhibition |
WO2016088026A1 (en) | 2014-12-01 | 2016-06-09 | Zinniatek Limited | A roofing, cladding or siding product |
AU2015356689B2 (en) | 2014-12-01 | 2020-10-15 | Zinniatek Limited | A roofing, cladding or siding apparatus |
US9953984B2 (en) | 2015-02-11 | 2018-04-24 | Lam Research Corporation | Tungsten for wordline applications |
US10170320B2 (en) | 2015-05-18 | 2019-01-01 | Lam Research Corporation | Feature fill with multi-stage nucleation inhibition |
US9754824B2 (en) | 2015-05-27 | 2017-09-05 | Lam Research Corporation | Tungsten films having low fluorine content |
US9978605B2 (en) | 2015-05-27 | 2018-05-22 | Lam Research Corporation | Method of forming low resistivity fluorine free tungsten film without nucleation |
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US11227825B2 (en) * | 2015-12-21 | 2022-01-18 | Intel Corporation | High performance integrated RF passives using dual lithography process |
US10573522B2 (en) | 2016-08-16 | 2020-02-25 | Lam Research Corporation | Method for preventing line bending during metal fill process |
AU2017345370B2 (en) | 2016-10-17 | 2023-08-31 | Zinniatek Limited | A roofing, cladding or siding module or apparatus |
US10211099B2 (en) | 2016-12-19 | 2019-02-19 | Lam Research Corporation | Chamber conditioning for remote plasma process |
KR20200032756A (en) | 2017-08-14 | 2020-03-26 | 램 리써치 코포레이션 | Metal filling process for 3D vertical NAND wordlines |
WO2019213604A1 (en) | 2018-05-03 | 2019-11-07 | Lam Research Corporation | Method of depositing tungsten and other metals in 3d nand structures |
US11702840B2 (en) | 2018-12-19 | 2023-07-18 | Zinniatek Limited | Roofing, cladding or siding module, its manufacture and use |
US11101274B2 (en) * | 2019-12-05 | 2021-08-24 | Micron Technology, Inc. | Ferroelectric capacitor, a ferroelectric memory cell, an array of ferroelectric memory cells, and a method of forming a ferroelectric capacitor |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5852307A (en) * | 1995-07-28 | 1998-12-22 | Kabushiki Kaisha Toshiba | Semiconductor device with capacitor |
Family Cites Families (63)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US596014A (en) * | 1897-12-21 | Flexible rotary roll | ||
ZA763680B (en) * | 1976-06-21 | 1978-02-22 | Nat Inst Metallurg | The separation and purification of ruthenium |
US4132569A (en) * | 1977-10-25 | 1979-01-02 | Diamond Shamrock Corporation | Ruthenium recovery process |
JPS6034388B2 (en) * | 1980-10-29 | 1985-08-08 | 凸版印刷株式会社 | Pressure heating sterilization method |
US4564702A (en) | 1983-04-28 | 1986-01-14 | Standard Oil Company (Indiana) | Hydrogenation reactions |
US4851895A (en) | 1985-05-06 | 1989-07-25 | American Telephone And Telegraph Company, At&T Bell Laboratories | Metallization for integrated devices |
JPS6257610A (en) * | 1985-09-04 | 1987-03-13 | Agency Of Ind Science & Technol | Separation of aqueous organic matter solution |
DE3709066A1 (en) * | 1986-03-31 | 1987-10-01 | Toshiba Kawasaki Kk | METHOD FOR PRODUCING A THIN METAL FILM BY CHEMICAL EVAPORATION |
JPS62256931A (en) * | 1986-04-28 | 1987-11-09 | Tanaka Kikinzoku Kogyo Kk | Method for recovering ruthenium |
JPH0812802B2 (en) | 1986-11-14 | 1996-02-07 | 株式会社日立製作所 | Thick film resistor material for thermal head, thick film resistor for thermal head, and thermal head |
JPH02197532A (en) * | 1989-01-26 | 1990-08-06 | Tanaka Kikinzoku Kogyo Kk | Method for recovering ru from metallic electrode |
JPH0321490A (en) * | 1989-06-20 | 1991-01-30 | Fuji Photo Film Co Ltd | Thermal recording material |
CA2103896A1 (en) | 1991-02-19 | 1992-08-20 | Barry William Ninham | Production of metal and metalloid nitrides |
US5068199A (en) | 1991-05-06 | 1991-11-26 | Micron Technology, Inc. | Method for anodizing a polysilicon layer lower capacitor plate of a DRAM to increase capacitance |
US5130885A (en) | 1991-07-10 | 1992-07-14 | Micron Technology, Inc. | Dram cell in which a silicon-germanium alloy layer having a rough surface morphology is utilized for a capacitive surface |
JP2761685B2 (en) | 1991-10-17 | 1998-06-04 | 三菱電機株式会社 | Method for manufacturing semiconductor device |
KR950009740B1 (en) | 1991-11-12 | 1995-08-26 | 금성일렉트론주식회사 | Method of fabricating a memory capacitor and structure thereof |
EP0553791A1 (en) | 1992-01-31 | 1993-08-04 | Nec Corporation | Capacitor electrode for dram and process of fabrication thereof |
JP3126510B2 (en) | 1992-08-12 | 2001-01-22 | 鐘紡株式会社 | Super absorbent nonwoven material |
US5381302A (en) | 1993-04-02 | 1995-01-10 | Micron Semiconductor, Inc. | Capacitor compatible with high dielectric constant materials having a low contact resistance layer and the method for forming same |
US5358889A (en) * | 1993-04-29 | 1994-10-25 | Northern Telecom Limited | Formation of ruthenium oxide for integrated circuits |
US5364813A (en) | 1993-09-01 | 1994-11-15 | Industrial Technology Research Institute | Stacked DRAM poly plate capacitor |
JP2897631B2 (en) | 1993-12-28 | 1999-05-31 | 日本電気株式会社 | Semiconductor integrated circuit device and manufacturing method |
US5696014A (en) | 1994-03-11 | 1997-12-09 | Micron Semiconductor, Inc. | Method for increasing capacitance of an HSG rugged capacitor using a phosphine rich oxidation and subsequent wet etch |
US5427974A (en) | 1994-03-18 | 1995-06-27 | United Microelectronics Corporation | Method for forming a capacitor in a DRAM cell using a rough overlayer of tungsten |
US5418180A (en) | 1994-06-14 | 1995-05-23 | Micron Semiconductor, Inc. | Process for fabricating storage capacitor structures using CVD tin on hemispherical grain silicon |
KR960019696A (en) * | 1994-11-23 | 1996-06-17 | 김광호 | Capacitor Structure and Manufacturing Method Thereof |
KR0155785B1 (en) | 1994-12-15 | 1998-10-15 | 김광호 | Fin capacitor & its fabrication method |
US5654222A (en) | 1995-05-17 | 1997-08-05 | Micron Technology, Inc. | Method for forming a capacitor with electrically interconnected construction |
US5877063A (en) | 1995-07-17 | 1999-03-02 | Micron Technology, Inc. | Method of forming rough polysilicon surfaces |
KR100224654B1 (en) | 1995-09-19 | 1999-10-15 | 윤종용 | Capacitor fabrication method of semiconductor device |
US5639685A (en) | 1995-10-06 | 1997-06-17 | Micron Technology, Inc. | Semiconductor processing method of providing a conductively doped layer of hemispherical grain polysilicon |
US5612560A (en) | 1995-10-31 | 1997-03-18 | Northern Telecom Limited | Electrode structure for ferroelectric capacitors for integrated circuits |
US5688550A (en) | 1995-12-15 | 1997-11-18 | Micron Technology, Inc. | Method of forming polysilicon having a desired surface roughness |
KR100228760B1 (en) | 1995-12-20 | 1999-11-01 | 김영환 | Capacitor fabrication method of semiconductor device |
US5930584A (en) | 1996-04-10 | 1999-07-27 | United Microelectronics Corp. | Process for fabricating low leakage current electrode for LPCVD titanium oxide films |
KR100230361B1 (en) | 1996-06-25 | 1999-11-15 | 윤종용 | Uneven metal film and method for fabricating capacitor using this |
US5923999A (en) | 1996-10-29 | 1999-07-13 | International Business Machines Corporation | Method of controlling dopant diffusion and metal contamination in thin polycide gate conductor of mosfet device |
JP3512959B2 (en) * | 1996-11-14 | 2004-03-31 | 株式会社東芝 | Semiconductor device and manufacturing method thereof |
US5926360A (en) | 1996-12-11 | 1999-07-20 | International Business Machines Corporation | Metallized oxide structure and fabrication |
GB2324408A (en) | 1997-01-21 | 1998-10-21 | United Microelectronics Corporation | Forming DRAM cells |
JPH10209392A (en) * | 1997-01-22 | 1998-08-07 | Sony Corp | Capacitor for semiconductor memory cell and its electrode and their manufacture |
US6364813B1 (en) * | 1997-04-16 | 2002-04-02 | Transmisiones Tsp, S.A. De C.V. | Method and apparatus for operating a clutch in an automated mechanical transmission |
US5893731A (en) | 1997-05-23 | 1999-04-13 | Industrial Technology Research Institute | Method for fabricating low cost integrated resistor capacitor combinations |
US6146961A (en) | 1997-06-23 | 2000-11-14 | Micron Technology, Inc. | Processing methods of forming a capacitor |
US6309713B1 (en) | 1997-06-30 | 2001-10-30 | Applied Materials, Inc. | Deposition of tungsten nitride by plasma enhanced chemical vapor deposition |
US5963458A (en) * | 1997-07-29 | 1999-10-05 | Siemens Building Technologies, Inc. | Digital controller for a cooling and heating plant having near-optimal global set point control strategy |
JP3419665B2 (en) * | 1997-10-27 | 2003-06-23 | 沖電気工業株式会社 | Method for manufacturing semiconductor device |
JP3169866B2 (en) | 1997-11-04 | 2001-05-28 | 日本電気株式会社 | Thin film capacitor and method of manufacturing the same |
TW411615B (en) | 1997-12-04 | 2000-11-11 | Fujitsu Ltd | Semiconductor device and method of manufacturing the same |
JPH11224938A (en) * | 1997-12-04 | 1999-08-17 | Fujitsu Ltd | Semiconductor device and fabrication thereof |
US6344413B1 (en) * | 1997-12-22 | 2002-02-05 | Motorola Inc. | Method for forming a semiconductor device |
US6060351A (en) | 1997-12-24 | 2000-05-09 | Micron Technology, Inc. | Process for forming capacitor over bit line memory cell |
US6060367A (en) | 1998-04-14 | 2000-05-09 | United Semiconductor Circuit Corp. | Method of forming capacitors |
KR100269331B1 (en) * | 1998-07-06 | 2000-10-16 | 윤종용 | Method for forming a capacitor with dielectric film having high dielectric constant |
US6037220A (en) | 1998-07-24 | 2000-03-14 | Vanguard International Semiconductor Corporation | Method of increasing the surface area of a DRAM capacitor structure via the use of hemispherical grained polysilicon |
US6204203B1 (en) | 1998-10-14 | 2001-03-20 | Applied Materials, Inc. | Post deposition treatment of dielectric films for interface control |
US6409904B1 (en) | 1998-12-01 | 2002-06-25 | Nutool, Inc. | Method and apparatus for depositing and controlling the texture of a thin film |
US6294836B1 (en) | 1998-12-22 | 2001-09-25 | Cvc Products Inc. | Semiconductor chip interconnect barrier material and fabrication method |
US6294807B1 (en) | 1999-02-26 | 2001-09-25 | Agere Systems Guardian Corp. | Semiconductor device structure including a tantalum pentoxide layer sandwiched between silicon nitride layers |
US6436786B1 (en) * | 1999-05-14 | 2002-08-20 | Matsushita Electronics Corporation | Method for fabricating a semiconductor device |
US6458183B1 (en) * | 1999-09-07 | 2002-10-01 | Colonial Metals, Inc. | Method for purifying ruthenium and related processes |
US6285038B1 (en) | 2000-03-01 | 2001-09-04 | Micron Technology, Inc. | Integrated circuitry and DRAM integrated circuitry |
-
2000
- 2000-06-08 US US09/590,795 patent/US7253076B1/en not_active Expired - Fee Related
-
2001
- 2001-06-07 CN CNB018109195A patent/CN1270352C/en not_active Expired - Fee Related
- 2001-06-07 WO PCT/US2001/018585 patent/WO2001095378A2/en active Application Filing
- 2001-06-07 CN CNB2006100925169A patent/CN100446178C/en not_active Expired - Fee Related
- 2001-06-07 AU AU2001275398A patent/AU2001275398A1/en not_active Abandoned
- 2001-06-07 JP JP2002502821A patent/JP4216585B2/en not_active Expired - Fee Related
- 2001-06-07 KR KR1020027016729A patent/KR100746192B1/en not_active IP Right Cessation
- 2001-06-07 EP EP01942105.6A patent/EP1297562B1/en not_active Expired - Lifetime
- 2001-10-29 US US10/002,779 patent/US6833576B2/en not_active Expired - Fee Related
- 2001-10-29 US US10/002,906 patent/US6596583B2/en not_active Expired - Lifetime
-
2002
- 2002-08-21 US US10/226,008 patent/US20030003697A1/en not_active Abandoned
-
2005
- 2005-09-26 US US11/235,866 patent/US20060076597A1/en not_active Abandoned
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5852307A (en) * | 1995-07-28 | 1998-12-22 | Kabushiki Kaisha Toshiba | Semiconductor device with capacitor |
Non-Patent Citations (3)
Title |
---|
KAGA Y ET AL: "THERMAL STABILITY OF RUO2 THIN FILMS AND EFFECTS OF ANNEALING AMBIENT ON THEIR REDUCTION PROCESS", JAPANESE JOURNAL OF APPLIED PHYSICS, PUBLICATION OFFICE JAPANESE JOURNAL OF APPLIED PHYSICS. TOKYO, JP, vol. 38, no. 6A, June 1999 (1999-06-01), pages 3689 - 3692, XP000883344, ISSN: 0021-4922 * |
MATSUI Y ET AL: "THERMAL STABILITY OF A RUO2 ELECTRODE PREPARED BY DC REACTIVE SPUTTERING", JAPANESE JOURNAL OF APPLIED PHYSICS, PUBLICATION OFFICE JAPANESE JOURNAL OF APPLIED PHYSICS. TOKYO, JP, vol. 39, no. 1, PART 1, January 2000 (2000-01-01), pages 256 - 263, XP001017786, ISSN: 0021-4922 * |
YOSHIO HAYASHIDE ET AL: "FABRICATION OF STORAGE CAPACITANCE-ENHANCED CAPACITORS WITH A ROUGH ELECTRODE", JAPANESE JOURNAL OF APPLIED PHYSICS, PUBLICATION OFFICE JAPANESE JOURNAL OF APPLIED PHYSICS. TOKYO, JP, 1990, pages 869 - 872, XP000178146, ISSN: 0021-4922 * |
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AU2001275398A1 (en) | 2001-12-17 |
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US6833576B2 (en) | 2004-12-21 |
CN1436364A (en) | 2003-08-13 |
WO2001095378A2 (en) | 2001-12-13 |
CN100446178C (en) | 2008-12-24 |
CN1270352C (en) | 2006-08-16 |
US20020055235A1 (en) | 2002-05-09 |
US20060076597A1 (en) | 2006-04-13 |
US20030003697A1 (en) | 2003-01-02 |
EP1297562A2 (en) | 2003-04-02 |
US6596583B2 (en) | 2003-07-22 |
US7253076B1 (en) | 2007-08-07 |
EP1297562B1 (en) | 2013-08-07 |
KR100746192B1 (en) | 2007-08-03 |
CN1873917A (en) | 2006-12-06 |
JP4216585B2 (en) | 2009-01-28 |
JP2003536256A (en) | 2003-12-02 |
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