WO2001093387A3 - Long wavelength vertical cavity surface emitting laser - Google Patents
Long wavelength vertical cavity surface emitting laser Download PDFInfo
- Publication number
- WO2001093387A3 WO2001093387A3 PCT/US2001/017548 US0117548W WO0193387A3 WO 2001093387 A3 WO2001093387 A3 WO 2001093387A3 US 0117548 W US0117548 W US 0117548W WO 0193387 A3 WO0193387 A3 WO 0193387A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- vertical cavity
- emitting laser
- surface emitting
- long wavelength
- cavity surface
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
- H01S5/18322—Position of the structure
- H01S5/1833—Position of the structure with more than one structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
- H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
- H01S5/3054—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
- H01S5/3095—Tunnel junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers
Abstract
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU2001271279A AU2001271279A1 (en) | 2000-05-31 | 2001-05-31 | Long wavelength vertical cavity surface emitting laser |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US20845200P | 2000-05-31 | 2000-05-31 | |
US60/208,452 | 2000-05-31 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2001093387A2 WO2001093387A2 (en) | 2001-12-06 |
WO2001093387A3 true WO2001093387A3 (en) | 2003-01-16 |
Family
ID=22774661
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2001/017548 WO2001093387A2 (en) | 2000-05-31 | 2001-05-31 | Long wavelength vertical cavity surface emitting laser |
Country Status (2)
Country | Link |
---|---|
AU (1) | AU2001271279A1 (en) |
WO (1) | WO2001093387A2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6822995B2 (en) | 2002-02-21 | 2004-11-23 | Finisar Corporation | GaAs/AI(Ga)As distributed bragg reflector on InP |
US8168456B2 (en) | 2004-10-01 | 2012-05-01 | Finisar Corporation | Vertical cavity surface emitting laser with undoped top mirror |
US8451875B2 (en) | 2004-10-01 | 2013-05-28 | Finisar Corporation | Vertical cavity surface emitting laser having strain reduced quantum wells |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6813295B2 (en) * | 2002-03-25 | 2004-11-02 | Agilent Technologies, Inc. | Asymmetric InGaAsN vertical cavity surface emitting lasers |
US6990132B2 (en) | 2003-03-20 | 2006-01-24 | Xerox Corporation | Laser diode with metal-oxide upper cladding layer |
US7408201B2 (en) | 2004-03-19 | 2008-08-05 | Philips Lumileds Lighting Company, Llc | Polarized semiconductor light emitting device |
US7808011B2 (en) * | 2004-03-19 | 2010-10-05 | Koninklijke Philips Electronics N.V. | Semiconductor light emitting devices including in-plane light emitting layers |
WO2016048268A1 (en) * | 2014-09-22 | 2016-03-31 | Hewlett Packard Enterprise Development Lp | Single mode vertical-cavity surface-emitting laser |
US10447011B2 (en) | 2014-09-22 | 2019-10-15 | Hewlett Packard Enterprise Development Lp | Single mode vertical-cavity surface-emitting laser |
CN105552190B (en) * | 2015-04-30 | 2018-10-09 | 美科米尚技术有限公司 | It is micro-led |
CN105405943A (en) * | 2015-05-21 | 2016-03-16 | 美科米尚技术有限公司 | Micro-light-emitting diode |
CN106711301B (en) * | 2015-11-12 | 2020-10-27 | 美科米尚技术有限公司 | Light emitting diode and manufacturing method thereof |
CN114520461B (en) * | 2020-11-18 | 2023-03-28 | 浙江睿熙科技有限公司 | VCSEL laser with multiple tunnel junctions and preparation method thereof |
CN113809635B (en) * | 2021-09-14 | 2022-11-25 | 苏州长瑞光电有限公司 | Vertical cavity surface emitting laser and preparation method thereof |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0822630A1 (en) * | 1996-07-30 | 1998-02-04 | Hewlett-Packard Company | A long-wavelength infra-red vertical cavity surface-emitting laser on a gallium arsenide substrate |
WO1998007218A1 (en) * | 1996-08-09 | 1998-02-19 | W.L. Gore & Associates, Inc. | Vertical cavity surface emitting laser with tunnel junction |
-
2001
- 2001-05-31 WO PCT/US2001/017548 patent/WO2001093387A2/en active Application Filing
- 2001-05-31 AU AU2001271279A patent/AU2001271279A1/en not_active Abandoned
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0822630A1 (en) * | 1996-07-30 | 1998-02-04 | Hewlett-Packard Company | A long-wavelength infra-red vertical cavity surface-emitting laser on a gallium arsenide substrate |
WO1998007218A1 (en) * | 1996-08-09 | 1998-02-19 | W.L. Gore & Associates, Inc. | Vertical cavity surface emitting laser with tunnel junction |
Non-Patent Citations (2)
Title |
---|
LEAR K L ET AL: "High-frequency modulation of oxide-confined vertical cavity surface emitting lasers", ELECTRONICS LETTERS, IEE STEVENAGE, GB, vol. 32, no. 5, 29 February 1996 (1996-02-29), pages 457 - 458, XP006004839, ISSN: 0013-5194 * |
OHNOKI N ET AL: "Super-lattice AlAs/AlInAs for lateral-oxide current confinement in InP-based lasers", JOURNAL OF CRYSTAL GROWTH, NORTH-HOLLAND PUBLISHING CO. AMSTERDAM, NL, vol. 195, no. 1-4, 15 December 1998 (1998-12-15), pages 603 - 608, XP004154324, ISSN: 0022-0248 * |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6822995B2 (en) | 2002-02-21 | 2004-11-23 | Finisar Corporation | GaAs/AI(Ga)As distributed bragg reflector on InP |
US8168456B2 (en) | 2004-10-01 | 2012-05-01 | Finisar Corporation | Vertical cavity surface emitting laser with undoped top mirror |
US8451875B2 (en) | 2004-10-01 | 2013-05-28 | Finisar Corporation | Vertical cavity surface emitting laser having strain reduced quantum wells |
Also Published As
Publication number | Publication date |
---|---|
AU2001271279A1 (en) | 2001-12-11 |
WO2001093387A2 (en) | 2001-12-06 |
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