WO2001088954A3 - Method of and apparatus for making electrical contact to wafer surface for full-face electroplating or electropolishing - Google Patents
Method of and apparatus for making electrical contact to wafer surface for full-face electroplating or electropolishing Download PDFInfo
- Publication number
- WO2001088954A3 WO2001088954A3 PCT/US2001/012578 US0112578W WO0188954A3 WO 2001088954 A3 WO2001088954 A3 WO 2001088954A3 US 0112578 W US0112578 W US 0112578W WO 0188954 A3 WO0188954 A3 WO 0188954A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- electrical contact
- wafer
- electropolishing
- full
- wafer surface
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/005—Contacting devices
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F7/00—Constructional parts, or assemblies thereof, of cells for electrolytic removal of material from objects; Servicing or operating
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
- C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
Abstract
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU2001253635A AU2001253635A1 (en) | 2000-05-12 | 2001-04-18 | Method of and apparatus for making electrical contact to wafer surface for full-face electroplating or electropolishing |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US20394400P | 2000-05-12 | 2000-05-12 | |
US60/203,944 | 2000-05-12 | ||
US09/735,546 | 2000-12-14 | ||
US09/735,546 US6482307B2 (en) | 2000-05-12 | 2000-12-14 | Method of and apparatus for making electrical contact to wafer surface for full-face electroplating or electropolishing |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2001088954A2 WO2001088954A2 (en) | 2001-11-22 |
WO2001088954A3 true WO2001088954A3 (en) | 2002-03-28 |
Family
ID=26899046
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2001/012578 WO2001088954A2 (en) | 2000-05-12 | 2001-04-18 | Method of and apparatus for making electrical contact to wafer surface for full-face electroplating or electropolishing |
Country Status (4)
Country | Link |
---|---|
US (1) | US6482307B2 (en) |
AU (1) | AU2001253635A1 (en) |
TW (1) | TW504796B (en) |
WO (1) | WO2001088954A2 (en) |
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- 2001-04-18 WO PCT/US2001/012578 patent/WO2001088954A2/en active Application Filing
- 2001-04-18 AU AU2001253635A patent/AU2001253635A1/en not_active Abandoned
- 2001-05-09 TW TW090111031A patent/TW504796B/en not_active IP Right Cessation
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5292399A (en) * | 1990-04-19 | 1994-03-08 | Applied Materials, Inc. | Plasma etching apparatus with conductive means for inhibiting arcing |
US5772833A (en) * | 1993-11-20 | 1998-06-30 | Tokyo Electron Limited | Plasma etching apparatus |
US5605637A (en) * | 1994-12-15 | 1997-02-25 | Applied Materials Inc. | Adjustable dc bias control in a plasma reactor |
Also Published As
Publication number | Publication date |
---|---|
AU2001253635A1 (en) | 2001-11-26 |
US20010035354A1 (en) | 2001-11-01 |
TW504796B (en) | 2002-10-01 |
US6482307B2 (en) | 2002-11-19 |
WO2001088954A2 (en) | 2001-11-22 |
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