WO2001078120A1 - Method of forming vias in silicon carbide and resulting devices and circuits - Google Patents
Method of forming vias in silicon carbide and resulting devices and circuits Download PDFInfo
- Publication number
- WO2001078120A1 WO2001078120A1 PCT/US2001/010289 US0110289W WO0178120A1 WO 2001078120 A1 WO2001078120 A1 WO 2001078120A1 US 0110289 W US0110289 W US 0110289W WO 0178120 A1 WO0178120 A1 WO 0178120A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- substrate
- silicon carbide
- etching
- conductive
- etch
- Prior art date
Links
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 130
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 126
- 238000000034 method Methods 0.000 title claims abstract description 70
- 239000000758 substrate Substances 0.000 claims abstract description 117
- 238000005530 etching Methods 0.000 claims abstract description 45
- 239000004065 semiconductor Substances 0.000 claims abstract description 22
- 230000000873 masking effect Effects 0.000 claims abstract description 17
- 238000004519 manufacturing process Methods 0.000 claims abstract description 15
- 229910052751 metal Inorganic materials 0.000 claims abstract description 14
- 239000002184 metal Substances 0.000 claims abstract description 14
- 239000000463 material Substances 0.000 claims description 41
- 238000009616 inductively coupled plasma Methods 0.000 claims description 26
- 229920002120 photoresistant polymer Polymers 0.000 claims description 25
- 229910018503 SF6 Inorganic materials 0.000 claims description 23
- 150000002500 ions Chemical class 0.000 claims description 20
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 17
- 239000002243 precursor Substances 0.000 claims description 12
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 9
- 229910052731 fluorine Inorganic materials 0.000 claims description 9
- 239000011737 fluorine Substances 0.000 claims description 9
- 239000010931 gold Substances 0.000 claims description 9
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 9
- 239000000395 magnesium oxide Substances 0.000 claims description 9
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims description 9
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 claims description 9
- 229960000909 sulfur hexafluoride Drugs 0.000 claims description 9
- 239000011248 coating agent Substances 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 7
- 238000000227 grinding Methods 0.000 claims description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 5
- 238000005498 polishing Methods 0.000 claims description 5
- 229920000642 polymer Polymers 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 3
- 229910000510 noble metal Inorganic materials 0.000 claims description 3
- 230000001681 protective effect Effects 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 239000004020 conductor Substances 0.000 claims description 2
- 238000009713 electroplating Methods 0.000 claims description 2
- 230000001939 inductive effect Effects 0.000 claims description 2
- 230000037361 pathway Effects 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 claims 4
- 229910015900 BF3 Inorganic materials 0.000 claims 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims 1
- 229910001887 tin oxide Inorganic materials 0.000 claims 1
- 210000002381 plasma Anatomy 0.000 description 34
- 230000008569 process Effects 0.000 description 17
- 230000008901 benefit Effects 0.000 description 15
- WRQGPGZATPOHHX-UHFFFAOYSA-N ethyl 2-oxohexanoate Chemical compound CCCCC(=O)C(=O)OCC WRQGPGZATPOHHX-UHFFFAOYSA-N 0.000 description 14
- 238000001020 plasma etching Methods 0.000 description 12
- 230000003628 erosive effect Effects 0.000 description 11
- 239000007789 gas Substances 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 235000012431 wafers Nutrition 0.000 description 9
- 230000001965 increasing effect Effects 0.000 description 8
- 238000001312 dry etching Methods 0.000 description 6
- 239000004642 Polyimide Substances 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 229920001721 polyimide Polymers 0.000 description 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 4
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 4
- 239000000460 chlorine Substances 0.000 description 4
- 229910052801 chlorine Inorganic materials 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 230000001413 cellular effect Effects 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000002349 favourable effect Effects 0.000 description 3
- 238000011835 investigation Methods 0.000 description 3
- 238000001878 scanning electron micrograph Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- QZRGKCOWNLSUDK-UHFFFAOYSA-N Iodochlorine Chemical compound ICl QZRGKCOWNLSUDK-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010849 ion bombardment Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 238000009623 Bosch process Methods 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- -1 CF Chemical class 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- CBEQRNSPHCCXSH-UHFFFAOYSA-N iodine monobromide Chemical compound IBr CBEQRNSPHCCXSH-UHFFFAOYSA-N 0.000 description 1
- 238000001393 microlithography Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000012421 spiking Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Ceramic Products (AREA)
- Chemical Vapour Deposition (AREA)
- Carbon And Carbon Compounds (AREA)
- Drying Of Semiconductors (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001575476A JP5142438B2 (en) | 2000-04-11 | 2001-03-30 | Method for forming vias in silicon carbide, and resulting devices and circuits |
AT01922909T ATE467231T1 (en) | 2000-04-11 | 2001-03-30 | METHOD FOR PRODUCING VIAS IN SILICON CARBIDE AND THEIR COMPONENTS AND CIRCUITS |
AU2001249659A AU2001249659A1 (en) | 2000-04-11 | 2001-03-30 | Method of forming vias in silicon carbide and resulting devices and circuits |
DE60142035T DE60142035D1 (en) | 2000-04-11 | 2001-03-30 | PROCESS FOR THE PREPARATION OF VIAS IN SILICON CARBIDE AND ITS COMPONENTS AND CIRCUITS |
CA2406054A CA2406054C (en) | 2000-04-11 | 2001-03-30 | Method of forming vias in silicon carbide and resulting devices and circuits |
EP01922909A EP1273032B1 (en) | 2000-04-11 | 2001-03-30 | Method of forming vias in silicon carbide and resulting devices and circuits |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/546,821 | 2000-04-11 | ||
US09/546,821 US6475889B1 (en) | 2000-04-11 | 2000-04-11 | Method of forming vias in silicon carbide and resulting devices and circuits |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2001078120A1 true WO2001078120A1 (en) | 2001-10-18 |
Family
ID=24182160
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2001/010289 WO2001078120A1 (en) | 2000-04-11 | 2001-03-30 | Method of forming vias in silicon carbide and resulting devices and circuits |
Country Status (11)
Country | Link |
---|---|
US (4) | US6475889B1 (en) |
EP (2) | EP2182548B1 (en) |
JP (1) | JP5142438B2 (en) |
KR (1) | KR100797130B1 (en) |
CN (1) | CN1197126C (en) |
AT (1) | ATE467231T1 (en) |
AU (1) | AU2001249659A1 (en) |
CA (1) | CA2406054C (en) |
DE (1) | DE60142035D1 (en) |
TW (1) | TW571383B (en) |
WO (1) | WO2001078120A1 (en) |
Cited By (5)
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EP1432024A2 (en) * | 2002-12-20 | 2004-06-23 | Fujikura Ltd. | Method of forming a penetration electrode and substrate having a penetration electrode |
EP1972008A2 (en) * | 2006-01-10 | 2008-09-24 | Cree, Inc. | Silicon carbide dimpled substrate |
US8202796B2 (en) | 2000-04-11 | 2012-06-19 | Cree, Inc. | Method of forming vias in silicon carbide and resulting devices and circuits |
DE10256985B4 (en) * | 2001-12-12 | 2013-01-10 | Denso Corporation | Method for producing a power semiconductor component |
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US7125786B2 (en) * | 2000-04-11 | 2006-10-24 | Cree, Inc. | Method of forming vias in silicon carbide and resulting devices and circuits |
US6475889B1 (en) * | 2000-04-11 | 2002-11-05 | Cree, Inc. | Method of forming vias in silicon carbide and resulting devices and circuits |
US6657237B2 (en) * | 2000-12-18 | 2003-12-02 | Samsung Electro-Mechanics Co., Ltd. | GaN based group III-V nitride semiconductor light-emitting diode and method for fabricating the same |
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US6653214B1 (en) * | 2002-01-03 | 2003-11-25 | The United States Of America As Represented By The Secretary Of The Air Force | Measured via-hole etching |
US6846747B2 (en) * | 2002-04-09 | 2005-01-25 | Unaxis Usa Inc. | Method for etching vias |
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US7151277B2 (en) * | 2003-07-03 | 2006-12-19 | The Regents Of The University Of California | Selective etching of silicon carbide films |
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US6515303B2 (en) | 2003-02-04 |
CA2406054A1 (en) | 2001-10-18 |
EP2182548B1 (en) | 2012-11-07 |
US20040241970A1 (en) | 2004-12-02 |
US6649497B2 (en) | 2003-11-18 |
JP5142438B2 (en) | 2013-02-13 |
EP2182548A3 (en) | 2010-08-11 |
EP1273032A1 (en) | 2003-01-08 |
KR100797130B1 (en) | 2008-01-22 |
AU2001249659A1 (en) | 2001-10-23 |
JP2003530716A (en) | 2003-10-14 |
TW571383B (en) | 2004-01-11 |
CN1197126C (en) | 2005-04-13 |
EP2182548A2 (en) | 2010-05-05 |
US20020055265A1 (en) | 2002-05-09 |
EP1273032B1 (en) | 2010-05-05 |
US6475889B1 (en) | 2002-11-05 |
US6946739B2 (en) | 2005-09-20 |
ATE467231T1 (en) | 2010-05-15 |
CA2406054C (en) | 2010-12-21 |
KR20020093901A (en) | 2002-12-16 |
US20020066960A1 (en) | 2002-06-06 |
CN1429400A (en) | 2003-07-09 |
DE60142035D1 (en) | 2010-06-17 |
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