WO2001073903A3 - A monitored optical component and method of making - Google Patents

A monitored optical component and method of making Download PDF

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Publication number
WO2001073903A3
WO2001073903A3 PCT/US2001/009014 US0109014W WO0173903A3 WO 2001073903 A3 WO2001073903 A3 WO 2001073903A3 US 0109014 W US0109014 W US 0109014W WO 0173903 A3 WO0173903 A3 WO 0173903A3
Authority
WO
WIPO (PCT)
Prior art keywords
materials
various
silicon
tin oxide
photodetector
Prior art date
Application number
PCT/US2001/009014
Other languages
French (fr)
Other versions
WO2001073903A9 (en
WO2001073903A2 (en
Inventor
Sigurd Wagner
Eugene Y Ma
Adam M Payne
Original Assignee
Aegis Semiconductor
Sigurd Wagner
Eugene Y Ma
Adam M Payne
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aegis Semiconductor, Sigurd Wagner, Eugene Y Ma, Adam M Payne filed Critical Aegis Semiconductor
Priority to AU2001271242A priority Critical patent/AU2001271242A1/en
Publication of WO2001073903A2 publication Critical patent/WO2001073903A2/en
Publication of WO2001073903A3 publication Critical patent/WO2001073903A3/en
Publication of WO2001073903A9 publication Critical patent/WO2001073903A9/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
    • H01S5/0264—Photo-diodes, e.g. transceiver devices, bidirectional devices for monitoring the laser-output
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0225—Out-coupling of light
    • H01S5/02251—Out-coupling of light using optical fibres
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/17—Semiconductor lasers comprising special layers
    • H01S2301/176—Specific passivation layers on surfaces other than the emission facet
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H01S5/0422—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]

Abstract

Materials suitable for fabricating optical monitors include amorphous, polycrystalline and microcrystalline materials. Semitransparent photodetector materials may be based on silicon or silicon and germanium alloys. Conductors for connecting to and contacting the photodetector may be made from various transparent oxides, including zinc oxide, tin oxide and indium tin oxide. Optical monitor structures based on PIN diodes take advantage of the materials disclosed. Various contact, lineout, substrate and interconnect structures optimize the monitors for integration with various light sources, including vertical cavity surface emitting laser (VCSEL) arrays. Complete integrated structures include a light source, optical monitor and either a package or waveguide into which light is directed.
PCT/US2001/009014 2000-03-28 2001-03-20 A monitored optical component and method of making WO2001073903A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2001271242A AU2001271242A1 (en) 2000-03-28 2001-03-20 A monitored optical component and method of making

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US19332600P 2000-03-28 2000-03-28
US60/193,326 2000-03-28

Publications (3)

Publication Number Publication Date
WO2001073903A2 WO2001073903A2 (en) 2001-10-04
WO2001073903A3 true WO2001073903A3 (en) 2002-12-27
WO2001073903A9 WO2001073903A9 (en) 2003-09-04

Family

ID=22713173

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/009014 WO2001073903A2 (en) 2000-03-28 2001-03-20 A monitored optical component and method of making

Country Status (2)

Country Link
AU (1) AU2001271242A1 (en)
WO (1) WO2001073903A2 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6452669B1 (en) * 1998-08-31 2002-09-17 Digital Optics Corp. Transmission detection for vertical cavity surface emitting laser power monitor and system
US7085300B2 (en) 2001-12-28 2006-08-01 Finisar Corporation Integral vertical cavity surface emitting laser and power monitor
GB0803702D0 (en) 2008-02-28 2008-04-09 Isis Innovation Transparent conducting oxides
GB0915376D0 (en) 2009-09-03 2009-10-07 Isis Innovation Transparent conducting oxides

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5742630A (en) * 1996-07-01 1998-04-21 Motorola, Inc. VCSEL with integrated pin diode
US5751757A (en) * 1996-07-01 1998-05-12 Motorola, Inc. VCSEL with integrated MSM photodetector
EP0899836A1 (en) * 1997-08-27 1999-03-03 Xerox Corporation Semiconductor laser device
EP0899835A1 (en) * 1997-08-27 1999-03-03 Xerox Corporation Semiconductor Laser Device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5742630A (en) * 1996-07-01 1998-04-21 Motorola, Inc. VCSEL with integrated pin diode
US5751757A (en) * 1996-07-01 1998-05-12 Motorola, Inc. VCSEL with integrated MSM photodetector
EP0899836A1 (en) * 1997-08-27 1999-03-03 Xerox Corporation Semiconductor laser device
EP0899835A1 (en) * 1997-08-27 1999-03-03 Xerox Corporation Semiconductor Laser Device

Also Published As

Publication number Publication date
WO2001073903A9 (en) 2003-09-04
WO2001073903A2 (en) 2001-10-04
AU2001271242A1 (en) 2001-10-08

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