WO2001069657A3 - Thermal diode for energy conversion - Google Patents

Thermal diode for energy conversion Download PDF

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Publication number
WO2001069657A3
WO2001069657A3 PCT/US2001/007046 US0107046W WO0169657A3 WO 2001069657 A3 WO2001069657 A3 WO 2001069657A3 US 0107046 W US0107046 W US 0107046W WO 0169657 A3 WO0169657 A3 WO 0169657A3
Authority
WO
WIPO (PCT)
Prior art keywords
region
ohmic contact
gap region
type
cold
Prior art date
Application number
PCT/US2001/007046
Other languages
French (fr)
Other versions
WO2001069657A8 (en
WO2001069657A2 (en
Inventor
Peter L Hagelstein
Yan R Kucherov
Original Assignee
Eneco Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/519,640 external-priority patent/US6489704B1/en
Priority to MXPA02008675A priority Critical patent/MXPA02008675A/en
Priority to EP01945922.1A priority patent/EP1282935B1/en
Priority to AU2001268030A priority patent/AU2001268030B2/en
Priority to KR1020027011632A priority patent/KR100743506B1/en
Priority to CN018091016A priority patent/CN1428020B/en
Priority to AU6803001A priority patent/AU6803001A/en
Priority to JP2001567024A priority patent/JP4896336B2/en
Application filed by Eneco Inc filed Critical Eneco Inc
Priority to CA2401810A priority patent/CA2401810C/en
Priority to IL15160001A priority patent/IL151600A0/en
Priority to BR0109001-1A priority patent/BR0109001A/en
Publication of WO2001069657A2 publication Critical patent/WO2001069657A2/en
Publication of WO2001069657A3 publication Critical patent/WO2001069657A3/en
Publication of WO2001069657A8 publication Critical patent/WO2001069657A8/en
Priority to IL151600A priority patent/IL151600A/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/10—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects
    • H10N10/13—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects operating with only the Peltier or Seebeck effects characterised by the heat-exchanging means at the junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors with potential-jump barrier or surface barrier
    • H01L29/93—Variable capacitance diodes, e.g. varactors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J45/00—Discharge tubes functioning as thermionic generators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N3/00—Generators in which thermal or kinetic energy is converted into electrical energy by ionisation of a fluid and removal of the charge therefrom
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects

Abstract

Solid state thermionic energy converter semiconductor diode implementation and method for conversion of thermal energy to electric energy, and electric energy to refrigeration. In embodiments of this invention a highly doped n region (14) can serve as an emitter region, from which carriers can be injected into a gap region. The gap region (16) can be p-type, intrinsic, or moderately doped n-type (14). A hot ohmic contact (12) is connected to the n-type region. A cold ohmic contact (20) serves as a collector and is connected to the other side of the gap region. The cold ohmic contact has a recombination region formed between the cold ohmic contact and the gap region and a blocking compensation layer that reduces the thermoelectric back flow component. The heated emitter relative to the collector generates an emf which drives current through a series load. The inventive principle works for hole conductivity, as well as for electrons.
PCT/US2001/007046 2000-03-06 2001-03-06 Thermal diode for energy conversion WO2001069657A2 (en)

Priority Applications (11)

Application Number Priority Date Filing Date Title
BR0109001-1A BR0109001A (en) 2000-03-06 2001-03-06 Thermal Diode for Power Conversion
JP2001567024A JP4896336B2 (en) 2000-03-06 2001-03-06 Thermal diode for energy conversion
AU2001268030A AU2001268030B2 (en) 2000-03-06 2001-03-06 Thermal diode for energy conversion
KR1020027011632A KR100743506B1 (en) 2000-03-06 2001-03-06 Thermal diode for energy conversion
CN018091016A CN1428020B (en) 2000-03-06 2001-03-06 Thermal diode for energy conversion and method for refrigeration using same
AU6803001A AU6803001A (en) 2000-03-06 2001-03-06 Thermal diode for energy conversion
CA2401810A CA2401810C (en) 2000-03-06 2001-03-06 Thermal diode for energy conversion
MXPA02008675A MXPA02008675A (en) 2000-03-06 2001-03-06 Thermal diode for energy conversion.
EP01945922.1A EP1282935B1 (en) 2000-03-06 2001-03-06 Thermal diode for energy conversion
IL15160001A IL151600A0 (en) 2000-03-06 2001-03-06 Thermal diode for energy conversion
IL151600A IL151600A (en) 2000-03-06 2002-09-04 Thermal diode for energy conversion

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US09/519,640 US6489704B1 (en) 1999-03-11 2000-03-06 Hybrid thermionic energy converter and method
US09/519,640 2000-03-06
US21356400P 2000-06-22 2000-06-22
US60/213,564 2000-06-22
US09/721,051 2000-11-22
US09/721,051 US6396191B1 (en) 1999-03-11 2000-11-22 Thermal diode for energy conversion

Publications (3)

Publication Number Publication Date
WO2001069657A2 WO2001069657A2 (en) 2001-09-20
WO2001069657A3 true WO2001069657A3 (en) 2002-04-04
WO2001069657A8 WO2001069657A8 (en) 2002-07-04

Family

ID=27395886

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/007046 WO2001069657A2 (en) 2000-03-06 2001-03-06 Thermal diode for energy conversion

Country Status (10)

Country Link
US (1) US6396191B1 (en)
EP (1) EP1282935B1 (en)
KR (1) KR100743506B1 (en)
CN (1) CN1428020B (en)
AU (2) AU6803001A (en)
BR (1) BR0109001A (en)
CA (1) CA2401810C (en)
IL (1) IL151600A0 (en)
MX (1) MXPA02008675A (en)
WO (1) WO2001069657A2 (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
RU2581606C1 (en) * 2014-12-03 2016-04-20 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Уфимский государственный авиационный технический университет" Thermionic stator magnetic circuit

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CA2401810C (en) 2010-05-11
KR100743506B1 (en) 2007-07-27
EP1282935B1 (en) 2014-10-29
KR20030047875A (en) 2003-06-18
EP1282935A4 (en) 2008-01-09
BR0109001A (en) 2003-04-29
IL151600A0 (en) 2003-04-10
WO2001069657A8 (en) 2002-07-04
CN1428020B (en) 2012-05-09
US6396191B1 (en) 2002-05-28
WO2001069657A2 (en) 2001-09-20
MXPA02008675A (en) 2003-04-14
AU6803001A (en) 2001-09-24
CA2401810A1 (en) 2001-09-20
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AU2001268030B2 (en) 2004-09-02
EP1282935A2 (en) 2003-02-12

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