WO2001069215A3 - Apparatus for analyzing samples using combined thermal wave and x-ray reflectance measurements - Google Patents

Apparatus for analyzing samples using combined thermal wave and x-ray reflectance measurements Download PDF

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Publication number
WO2001069215A3
WO2001069215A3 PCT/US2001/040183 US0140183W WO0169215A3 WO 2001069215 A3 WO2001069215 A3 WO 2001069215A3 US 0140183 W US0140183 W US 0140183W WO 0169215 A3 WO0169215 A3 WO 0169215A3
Authority
WO
WIPO (PCT)
Prior art keywords
analyzing samples
reflectance measurements
thermal wave
combined thermal
processor
Prior art date
Application number
PCT/US2001/040183
Other languages
French (fr)
Other versions
WO2001069215A2 (en
Inventor
Jon Opsal
Allan Rosencwaig
Original Assignee
Therma Wave Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Therma Wave Inc filed Critical Therma Wave Inc
Publication of WO2001069215A2 publication Critical patent/WO2001069215A2/en
Publication of WO2001069215A3 publication Critical patent/WO2001069215A3/en

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/20—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by using diffraction of the radiation by the materials, e.g. for investigating crystal structure; by using scattering of the radiation by the materials, e.g. for investigating non-crystalline materials; by using reflection of the radiation by the materials

Abstract

This invention provides a measurement device that includes both an X-ray reflectometer and a thermal or plasma wave measurement module for determining the characteristics of a sample. Preferably, these two measurement modules are combined into a unitary apparatus and arranged to be able to take measurements at the same location on the wafer. A processor will receive data from both modules and combine that data to resolve ambiguities about the characteristics of the sample. The processor can be part of the device or separate therefrom as long as the measurement data is transferred to the processor.
PCT/US2001/040183 2000-03-14 2001-02-26 Apparatus for analyzing samples using combined thermal wave and x-ray reflectance measurements WO2001069215A2 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US18933400P 2000-03-14 2000-03-14
US60/189,334 2000-03-14
US09/761,132 US6408048B2 (en) 2000-03-14 2001-01-16 Apparatus for analyzing samples using combined thermal wave and X-ray reflectance measurements
US09/761,132 2001-01-16

Publications (2)

Publication Number Publication Date
WO2001069215A2 WO2001069215A2 (en) 2001-09-20
WO2001069215A3 true WO2001069215A3 (en) 2002-07-11

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/040183 WO2001069215A2 (en) 2000-03-14 2001-02-26 Apparatus for analyzing samples using combined thermal wave and x-ray reflectance measurements

Country Status (2)

Country Link
US (3) US6408048B2 (en)
WO (1) WO2001069215A2 (en)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1232388A2 (en) 1999-11-19 2002-08-21 Battelle Memorial Institute An apparatus for machine fluid analysis
US6408048B2 (en) * 2000-03-14 2002-06-18 Therma-Wave, Inc. Apparatus for analyzing samples using combined thermal wave and X-ray reflectance measurements
US6532070B1 (en) 2000-07-17 2003-03-11 Therma-Wave, Inc. Method for determining ion concentration and energy of shallow junction implants
EP1319244A1 (en) * 2000-09-20 2003-06-18 Kla-Tencor Inc. Methods and systems for semiconductor fabrication processes
US6919957B2 (en) * 2000-09-20 2005-07-19 Kla-Tencor Technologies Corp. Methods and systems for determining a critical dimension, a presence of defects, and a thin film characteristic of a specimen
US7130029B2 (en) * 2000-09-20 2006-10-31 Kla-Tencor Technologies Corp. Methods and systems for determining an adhesion characteristic and a thickness of a specimen
US6782337B2 (en) 2000-09-20 2004-08-24 Kla-Tencor Technologies Corp. Methods and systems for determining a critical dimension an a presence of defects on a specimen
US6812045B1 (en) * 2000-09-20 2004-11-02 Kla-Tencor, Inc. Methods and systems for determining a characteristic of a specimen prior to, during, or subsequent to ion implantation
US6673637B2 (en) 2000-09-20 2004-01-06 Kla-Tencor Technologies Methods and systems for determining a presence of macro defects and overlay of a specimen
US6694284B1 (en) 2000-09-20 2004-02-17 Kla-Tencor Technologies Corp. Methods and systems for determining at least four properties of a specimen
US6891627B1 (en) 2000-09-20 2005-05-10 Kla-Tencor Technologies Corp. Methods and systems for determining a critical dimension and overlay of a specimen
US6668039B2 (en) 2002-01-07 2003-12-23 Battelle Memorial Institute Compact X-ray fluorescence spectrometer and method for fluid analysis
US6917039B2 (en) * 2002-02-13 2005-07-12 Therma-Wave, Inc. Method and system for combined photothermal modulated reflectance and photothermal IR radiometric system
US6876723B1 (en) * 2002-07-03 2005-04-05 The United States Of America As Represented By The Department Of Energy Rise time measurement for ultrafast X-ray pulses
US20040112863A1 (en) * 2002-12-16 2004-06-17 International Business Machines Corporation Method of enhancing surface reactions by local resonant heating
US7414721B1 (en) * 2002-12-23 2008-08-19 Lsi Corporation In-situ metrology system and method for monitoring metalization and other thin film formation
KR20040073251A (en) * 2003-02-13 2004-08-19 (주)아이블포토닉스 Apparatus and method for determining physical properties of ferroelectric single crystal using spectroscopic ellipsometry
US6859517B2 (en) * 2003-04-22 2005-02-22 Battelle Memorial Institute Dual x-ray fluorescence spectrometer and method for fluid analysis
US20040253751A1 (en) * 2003-06-16 2004-12-16 Alex Salnik Photothermal ultra-shallow junction monitoring system with UV pump
US7049596B2 (en) * 2003-07-02 2006-05-23 Innoventive Technologies, Inc. Method and apparatus for distinguishing materials
US7045798B2 (en) * 2004-02-20 2006-05-16 Applied Materials, Inc. Characterizing an electron beam treatment apparatus
US7184515B2 (en) * 2004-09-24 2007-02-27 Battelle Memorial Institute Component specific machine wear determination with x-ray fluorescence spectrometry
DK2156370T3 (en) 2007-05-14 2012-01-23 Historx Inc Compartment separation by pixel characterization using image data clustering
EP2162728B1 (en) 2007-06-15 2016-07-27 Novartis AG Microscope system and method for obtaining standardized sample data
EP2335221B8 (en) 2008-09-16 2016-05-25 Novartis AG Reproducible quantification of biomarker expression
US8065108B2 (en) * 2009-02-03 2011-11-22 Northrop Grumman Guidance And Electronics Company, Inc. Systems and methods for measuring at least one thermal property of materials based on a thermal brewster angle
US8565379B2 (en) * 2011-03-14 2013-10-22 Jordan Valley Semiconductors Ltd. Combining X-ray and VUV analysis of thin film layers
US8860937B1 (en) 2012-10-24 2014-10-14 Kla-Tencor Corp. Metrology systems and methods for high aspect ratio and large lateral dimension structures
US8912495B2 (en) * 2012-11-21 2014-12-16 Kla-Tencor Corp. Multi-spectral defect inspection for 3D wafers
US9778213B2 (en) * 2013-08-19 2017-10-03 Kla-Tencor Corporation Metrology tool with combined XRF and SAXS capabilities
WO2016142864A1 (en) * 2015-03-09 2016-09-15 Alliance For Sustainable Energy, Llc Batch and continuous methods for evaluating the physical and thermal properties of films

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4854710A (en) * 1985-03-01 1989-08-08 Therma-Wave, Inc. Method and apparatus for evaluating surface and subsurface features in a semiconductor
US5844684A (en) * 1997-02-28 1998-12-01 Brown University Research Foundation Optical method for determining the mechanical properties of a material
RU2129698C1 (en) * 1998-04-29 1999-04-27 Турьянский Александр Георгиевич X-ray reflectometer

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4521118A (en) 1982-07-26 1985-06-04 Therma-Wave, Inc. Method for detection of thermal waves with a laser probe
US4636088A (en) 1984-05-21 1987-01-13 Therma-Wave, Inc. Method and apparatus for evaluating surface conditions of a sample
US4634290A (en) 1984-05-21 1987-01-06 Therma-Wave, Inc. Method and apparatus for detecting thermal waves
US5042952A (en) * 1984-05-21 1991-08-27 Therma-Wave, Inc. Method and apparatus for evaluating surface and subsurface and subsurface features in a semiconductor
US4952063A (en) * 1985-03-01 1990-08-28 Therma-Wave, Inc. Method and apparatus for evaluating surface and subsurface features in a semiconductor
US4821302A (en) * 1988-02-29 1989-04-11 The United States Of America As Represented By The Secretary Of The Navy Method and apparatus for transient unit cell measurement
US4999014A (en) 1989-05-04 1991-03-12 Therma-Wave, Inc. Method and apparatus for measuring thickness of thin films
US5249216B1 (en) * 1989-10-19 1996-11-05 Sumitomo Electric Industries Total reflection x-ray fluorescence apparatus
US5074669A (en) 1989-12-12 1991-12-24 Therma-Wave, Inc. Method and apparatus for evaluating ion implant dosage levels in semiconductors
US5181080A (en) 1991-12-23 1993-01-19 Therma-Wave, Inc. Method and apparatus for evaluating the thickness of thin films
US5228776A (en) 1992-05-06 1993-07-20 Therma-Wave, Inc. Apparatus for evaluating thermal and electrical characteristics in a sample
US5619548A (en) 1995-08-11 1997-04-08 Oryx Instruments And Materials Corp. X-ray thickness gauge
US5877859A (en) 1996-07-24 1999-03-02 Therma-Wave, Inc. Broadband spectroscopic rotating compensator ellipsometer
US5978074A (en) 1997-07-03 1999-11-02 Therma-Wave, Inc. Apparatus for evaluating metalized layers on semiconductors
EP1012571A1 (en) 1997-07-11 2000-06-28 Therma-Wave Inc. An apparatus for analyzing multi-layer thin film stacks on semiconductors
US5798837A (en) 1997-07-11 1998-08-25 Therma-Wave, Inc. Thin film optical measurement system and method with calibrating ellipsometer
US6005915A (en) * 1997-11-07 1999-12-21 Advanced Micro Devices, Inc. Apparatus and method for measuring the roughness of a target material surface based upon the scattering of incident X-ray photons
US6108087A (en) 1998-02-24 2000-08-22 Kla-Tencor Corporation Non-contact system for measuring film thickness
US6754305B1 (en) 1999-08-02 2004-06-22 Therma-Wave, Inc. Measurement of thin films and barrier layers on patterned wafers with X-ray reflectometry
US6381303B1 (en) * 1999-09-29 2002-04-30 Jordan Valley Applied Radiation Ltd. X-ray microanalyzer for thin films
US6408048B2 (en) * 2000-03-14 2002-06-18 Therma-Wave, Inc. Apparatus for analyzing samples using combined thermal wave and X-ray reflectance measurements
US6453006B1 (en) 2000-03-16 2002-09-17 Therma-Wave, Inc. Calibration and alignment of X-ray reflectometric systems

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4854710A (en) * 1985-03-01 1989-08-08 Therma-Wave, Inc. Method and apparatus for evaluating surface and subsurface features in a semiconductor
US5844684A (en) * 1997-02-28 1998-12-01 Brown University Research Foundation Optical method for determining the mechanical properties of a material
RU2129698C1 (en) * 1998-04-29 1999-04-27 Турьянский Александр Георгиевич X-ray reflectometer

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
BOHER P ET AL: "A NEW VERSATILE SYSTEM FOR CHARACTERIZATION OF ANTIREFLECTIVE COATINGS USING COMBINED SPECTROSCOPIC ELLIPSOMETRY AND GRAZING X-RAY REFLECTANCE", PROCEEDINGS OF THE SPIE, SPIE, BELLINGHAM, VA, US, vol. 3741, May 1999 (1999-05-01), pages 104 - 114, XP001006364 *
PELKA J B ET AL: "Study of near-surface layers modified by ion implantation in Si wafers by grazing incidence X-ray reflectometry", JOURNAL OF ALLOYS AND COMPOUNDS, ELSEVIER SEQUOIA, LAUSANNE, CH, vol. 286, no. 1-2, 5 May 1999 (1999-05-05), pages 337 - 342, XP004182501, ISSN: 0925-8388 *
TONEY M F ET AL: "MEASUREMENTS OF CARBON THIN FILMS USING X-RAY REFLECTIVITY", JOURNAL OF APPLIED PHYSICS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 66, no. 4, 15 August 1989 (1989-08-15), pages 1861 - 1863, XP000051183, ISSN: 0021-8979 *

Also Published As

Publication number Publication date
US20020154736A1 (en) 2002-10-24
US6512815B2 (en) 2003-01-28
US20030081725A1 (en) 2003-05-01
US20020001364A1 (en) 2002-01-03
WO2001069215A2 (en) 2001-09-20
US6408048B2 (en) 2002-06-18
US6678349B2 (en) 2004-01-13

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