WO2001066819A3 - Methods for preparing ruthenium metal films - Google Patents
Methods for preparing ruthenium metal films Download PDFInfo
- Publication number
- WO2001066819A3 WO2001066819A3 PCT/US2001/007402 US0107402W WO0166819A3 WO 2001066819 A3 WO2001066819 A3 WO 2001066819A3 US 0107402 W US0107402 W US 0107402W WO 0166819 A3 WO0166819 A3 WO 0166819A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- metal films
- methods
- ruthenium metal
- dienes
- preparing ruthenium
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/16—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal carbonyl compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001565420A JP2003526009A (en) | 2000-03-08 | 2001-03-08 | Preparation method of ruthenium metal film |
EP01924128A EP1261754A2 (en) | 2000-03-08 | 2001-03-08 | Methods for preparing ruthenium metal films |
AU2001250811A AU2001250811A1 (en) | 2000-03-08 | 2001-03-08 | Methods for preparing ruthenium metal films |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/520,492 | 2000-03-08 | ||
US09/520,492 US6380080B2 (en) | 2000-03-08 | 2000-03-08 | Methods for preparing ruthenium metal films |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2001066819A2 WO2001066819A2 (en) | 2001-09-13 |
WO2001066819A3 true WO2001066819A3 (en) | 2002-01-24 |
Family
ID=24072827
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2001/007402 WO2001066819A2 (en) | 2000-03-08 | 2001-03-08 | Methods for preparing ruthenium metal films |
Country Status (7)
Country | Link |
---|---|
US (1) | US6380080B2 (en) |
EP (1) | EP1261754A2 (en) |
JP (1) | JP2003526009A (en) |
KR (1) | KR100708496B1 (en) |
AU (1) | AU2001250811A1 (en) |
TW (1) | TW487972B (en) |
WO (1) | WO2001066819A2 (en) |
Families Citing this family (58)
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JP4034518B2 (en) * | 2000-03-31 | 2008-01-16 | 株式会社日立国際電気 | Manufacturing method of semiconductor device |
US7494927B2 (en) | 2000-05-15 | 2009-02-24 | Asm International N.V. | Method of growing electrical conductors |
US6429127B1 (en) * | 2000-06-08 | 2002-08-06 | Micron Technology, Inc. | Methods for forming rough ruthenium-containing layers and structures/methods using same |
JP3998906B2 (en) * | 2000-09-28 | 2007-10-31 | 株式会社日立国際電気 | Manufacturing method of semiconductor device |
JP2002212112A (en) * | 2001-01-22 | 2002-07-31 | Tanaka Kikinzoku Kogyo Kk | Ruthenium compound for chemical vapor deposition and method for chemical vapor deposition of ruthenium thin film and ruthenium compound thin film |
KR100434489B1 (en) * | 2001-03-22 | 2004-06-05 | 삼성전자주식회사 | Method for depositing ruthenium layer having Ru02 seeding layer |
KR100727372B1 (en) | 2001-09-12 | 2007-06-12 | 토소가부시키가이샤 | Ruthenium complex, manufacturing process thereof and the method for forming thin-film using the complex |
US6824816B2 (en) * | 2002-01-29 | 2004-11-30 | Asm International N.V. | Process for producing metal thin films by ALD |
US7160577B2 (en) | 2002-05-02 | 2007-01-09 | Micron Technology, Inc. | Methods for atomic-layer deposition of aluminum oxides in integrated circuits |
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US6794299B1 (en) * | 2002-06-03 | 2004-09-21 | Advanced Micro Devices Inc. | Various methods of controlling conformal film deposition processes, and a system for accomplishing same |
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US7199023B2 (en) * | 2002-08-28 | 2007-04-03 | Micron Technology, Inc. | Atomic layer deposited HfSiON dielectric films wherein each precursor is independendently pulsed |
US7084078B2 (en) * | 2002-08-29 | 2006-08-01 | Micron Technology, Inc. | Atomic layer deposited lanthanide doped TiOx dielectric films |
US7588988B2 (en) | 2004-08-31 | 2009-09-15 | Micron Technology, Inc. | Method of forming apparatus having oxide films formed using atomic layer deposition |
US7484315B2 (en) * | 2004-11-29 | 2009-02-03 | Tokyo Electron Limited | Replaceable precursor tray for use in a multi-tray solid precursor delivery system |
US7708835B2 (en) * | 2004-11-29 | 2010-05-04 | Tokyo Electron Limited | Film precursor tray for use in a film precursor evaporation system and method of using |
US7488512B2 (en) * | 2004-11-29 | 2009-02-10 | Tokyo Electron Limited | Method for preparing solid precursor tray for use in solid precursor evaporation system |
US7638002B2 (en) * | 2004-11-29 | 2009-12-29 | Tokyo Electron Limited | Multi-tray film precursor evaporation system and thin film deposition system incorporating same |
KR100647318B1 (en) * | 2005-02-03 | 2006-11-23 | 삼성전자주식회사 | Nonvolatile memory device and fabrication method of the same |
US7666773B2 (en) * | 2005-03-15 | 2010-02-23 | Asm International N.V. | Selective deposition of noble metal thin films |
US8025922B2 (en) * | 2005-03-15 | 2011-09-27 | Asm International N.V. | Enhanced deposition of noble metals |
US7651570B2 (en) * | 2005-03-31 | 2010-01-26 | Tokyo Electron Limited | Solid precursor vaporization system for use in chemical vapor deposition |
US7390756B2 (en) * | 2005-04-28 | 2008-06-24 | Micron Technology, Inc. | Atomic layer deposited zirconium silicon oxide films |
US7662729B2 (en) * | 2005-04-28 | 2010-02-16 | Micron Technology, Inc. | Atomic layer deposition of a ruthenium layer to a lanthanide oxide dielectric layer |
US7572695B2 (en) * | 2005-05-27 | 2009-08-11 | Micron Technology, Inc. | Hafnium titanium oxide films |
US20070014919A1 (en) * | 2005-07-15 | 2007-01-18 | Jani Hamalainen | Atomic layer deposition of noble metal oxides |
US7927948B2 (en) | 2005-07-20 | 2011-04-19 | Micron Technology, Inc. | Devices with nanocrystals and methods of formation |
US7575978B2 (en) * | 2005-08-04 | 2009-08-18 | Micron Technology, Inc. | Method for making conductive nanoparticle charge storage element |
US7410910B2 (en) * | 2005-08-31 | 2008-08-12 | Micron Technology, Inc. | Lanthanum aluminum oxynitride dielectric films |
US20070069383A1 (en) * | 2005-09-28 | 2007-03-29 | Tokyo Electron Limited | Semiconductor device containing a ruthenium diffusion barrier and method of forming |
US7713876B2 (en) * | 2005-09-28 | 2010-05-11 | Tokyo Electron Limited | Method for integrating a ruthenium layer with bulk copper in copper metallization |
US7709402B2 (en) * | 2006-02-16 | 2010-05-04 | Micron Technology, Inc. | Conductive layers for hafnium silicon oxynitride films |
US7435484B2 (en) * | 2006-09-01 | 2008-10-14 | Asm Japan K.K. | Ruthenium thin film-formed structure |
JP5248508B2 (en) | 2006-09-22 | 2013-07-31 | レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード | Method for depositing ruthenium-containing films |
US20080124484A1 (en) * | 2006-11-08 | 2008-05-29 | Asm Japan K.K. | Method of forming ru film and metal wiring structure |
US7763511B2 (en) * | 2006-12-29 | 2010-07-27 | Intel Corporation | Dielectric barrier for nanocrystals |
US20080171436A1 (en) * | 2007-01-11 | 2008-07-17 | Asm Genitech Korea Ltd. | Methods of depositing a ruthenium film |
US7846256B2 (en) * | 2007-02-23 | 2010-12-07 | Tokyo Electron Limited | Ampule tray for and method of precursor surface area |
US8367506B2 (en) | 2007-06-04 | 2013-02-05 | Micron Technology, Inc. | High-k dielectrics with gold nano-particles |
US20090087339A1 (en) * | 2007-09-28 | 2009-04-02 | Asm Japan K.K. | METHOD FOR FORMING RUTHENIUM COMPLEX FILM USING Beta-DIKETONE-COORDINATED RUTHENIUM PRECURSOR |
KR101544198B1 (en) | 2007-10-17 | 2015-08-12 | 한국에이에스엠지니텍 주식회사 | Method of depositing ruthenium film |
US7655564B2 (en) * | 2007-12-12 | 2010-02-02 | Asm Japan, K.K. | Method for forming Ta-Ru liner layer for Cu wiring |
KR20090067505A (en) * | 2007-12-21 | 2009-06-25 | 에이에스엠지니텍코리아 주식회사 | Method of depositing ruthenium film |
US7799674B2 (en) * | 2008-02-19 | 2010-09-21 | Asm Japan K.K. | Ruthenium alloy film for copper interconnects |
US8124528B2 (en) * | 2008-04-10 | 2012-02-28 | Micron Technology, Inc. | Method for forming a ruthenium film |
TW200951241A (en) * | 2008-05-30 | 2009-12-16 | Sigma Aldrich Co | Methods of forming ruthenium-containing films by atomic layer deposition |
US8084104B2 (en) * | 2008-08-29 | 2011-12-27 | Asm Japan K.K. | Atomic composition controlled ruthenium alloy film formed by plasma-enhanced atomic layer deposition |
US8133555B2 (en) | 2008-10-14 | 2012-03-13 | Asm Japan K.K. | Method for forming metal film by ALD using beta-diketone metal complex |
US9379011B2 (en) | 2008-12-19 | 2016-06-28 | Asm International N.V. | Methods for depositing nickel films and for making nickel silicide and nickel germanide |
US20110020546A1 (en) * | 2009-05-15 | 2011-01-27 | Asm International N.V. | Low Temperature ALD of Noble Metals |
US8329569B2 (en) * | 2009-07-31 | 2012-12-11 | Asm America, Inc. | Deposition of ruthenium or ruthenium dioxide |
JP5741443B2 (en) * | 2009-11-25 | 2015-07-01 | Jsr株式会社 | Ruthenium film forming material and ruthenium film forming method |
US8357614B2 (en) | 2010-04-19 | 2013-01-22 | L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Ruthenium-containing precursors for CVD and ALD |
US8871617B2 (en) | 2011-04-22 | 2014-10-28 | Asm Ip Holding B.V. | Deposition and reduction of mixed metal oxide thin films |
JP2015160963A (en) * | 2014-02-26 | 2015-09-07 | 東京エレクトロン株式会社 | Method and apparatus for depositing ruthenium film, and method for manufacturing semiconductor device |
JP6547930B2 (en) * | 2014-08-29 | 2019-07-24 | 株式会社Flosfia | Metal film formation method |
US9607842B1 (en) | 2015-10-02 | 2017-03-28 | Asm Ip Holding B.V. | Methods of forming metal silicides |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5372849A (en) * | 1992-07-28 | 1994-12-13 | Minnesota Mining And Manufacturing Company | Chemical vapor deposition of iron, ruthenium, and osmium |
US5962716A (en) * | 1998-08-27 | 1999-10-05 | Micron Technology, Inc. | Methods for preparing ruthenium and osmium compounds |
WO2000012779A1 (en) * | 1998-08-27 | 2000-03-09 | Micron Technology, Inc. | Methods for preparing ruthenium oxide films |
WO2000012776A1 (en) * | 1998-08-27 | 2000-03-09 | Micron Technology, Inc. | Precursor chemistries for chemical vapor deposition of ruthenium and ruthenium oxide |
Family Cites Families (13)
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US5130172A (en) | 1988-10-21 | 1992-07-14 | The Regents Of The University Of California | Low temperature organometallic deposition of metals |
JP3351856B2 (en) | 1992-04-20 | 2002-12-03 | テキサス インスツルメンツ インコーポレイテツド | Method of manufacturing structure and capacitor |
JP3407204B2 (en) | 1992-07-23 | 2003-05-19 | オリンパス光学工業株式会社 | Ferroelectric integrated circuit and method of manufacturing the same |
US5392189A (en) | 1993-04-02 | 1995-02-21 | Micron Semiconductor, Inc. | Capacitor compatible with high dielectric constant materials having two independent insulative layers and the method for forming same |
US5352488A (en) | 1993-05-14 | 1994-10-04 | Syracuse University | Chemical vapor deposition process employing metal pentadienyl complexes |
US5407855A (en) | 1993-06-07 | 1995-04-18 | Motorola, Inc. | Process for forming a semiconductor device having a reducing/oxidizing conductive material |
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US5555486A (en) | 1994-12-29 | 1996-09-10 | North Carolina State University | Hybrid metal/metal oxide electrodes for ferroelectric capacitors |
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US5695815A (en) | 1996-05-29 | 1997-12-09 | Micron Technology, Inc. | Metal carboxylate complexes for formation of metal-containing films on semiconductor devices |
US5935648A (en) | 1997-03-28 | 1999-08-10 | The United States Of America As Represented By The Secretary Of The Air Force | High surface area molybdenum nitride electrodes |
US5980983A (en) | 1997-04-17 | 1999-11-09 | The President And Fellows Of Harvard University | Liquid precursors for formation of metal oxides |
US6074945A (en) * | 1998-08-27 | 2000-06-13 | Micron Technology, Inc. | Methods for preparing ruthenium metal films |
-
2000
- 2000-03-08 US US09/520,492 patent/US6380080B2/en not_active Expired - Lifetime
-
2001
- 2001-03-05 TW TW090105023A patent/TW487972B/en not_active IP Right Cessation
- 2001-03-08 EP EP01924128A patent/EP1261754A2/en not_active Withdrawn
- 2001-03-08 WO PCT/US2001/007402 patent/WO2001066819A2/en active Application Filing
- 2001-03-08 JP JP2001565420A patent/JP2003526009A/en not_active Withdrawn
- 2001-03-08 KR KR1020027011693A patent/KR100708496B1/en not_active IP Right Cessation
- 2001-03-08 AU AU2001250811A patent/AU2001250811A1/en not_active Abandoned
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5372849A (en) * | 1992-07-28 | 1994-12-13 | Minnesota Mining And Manufacturing Company | Chemical vapor deposition of iron, ruthenium, and osmium |
US5962716A (en) * | 1998-08-27 | 1999-10-05 | Micron Technology, Inc. | Methods for preparing ruthenium and osmium compounds |
WO2000012779A1 (en) * | 1998-08-27 | 2000-03-09 | Micron Technology, Inc. | Methods for preparing ruthenium oxide films |
WO2000012776A1 (en) * | 1998-08-27 | 2000-03-09 | Micron Technology, Inc. | Precursor chemistries for chemical vapor deposition of ruthenium and ruthenium oxide |
Also Published As
Publication number | Publication date |
---|---|
KR20020089381A (en) | 2002-11-29 |
WO2001066819A2 (en) | 2001-09-13 |
JP2003526009A (en) | 2003-09-02 |
US20020013052A1 (en) | 2002-01-31 |
EP1261754A2 (en) | 2002-12-04 |
US6380080B2 (en) | 2002-04-30 |
KR100708496B1 (en) | 2007-04-16 |
TW487972B (en) | 2002-05-21 |
AU2001250811A1 (en) | 2001-09-17 |
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