WO2001065606A3 - Feldeffekt-transistoranordnung mit hoher latch-up-festigkeit und verfahren zu deren herstellung - Google Patents

Feldeffekt-transistoranordnung mit hoher latch-up-festigkeit und verfahren zu deren herstellung Download PDF

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Publication number
WO2001065606A3
WO2001065606A3 PCT/DE2001/000617 DE0100617W WO0165606A3 WO 2001065606 A3 WO2001065606 A3 WO 2001065606A3 DE 0100617 W DE0100617 W DE 0100617W WO 0165606 A3 WO0165606 A3 WO 0165606A3
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WO
WIPO (PCT)
Prior art keywords
strength
field effect
effect transistor
transistor configuration
production
Prior art date
Application number
PCT/DE2001/000617
Other languages
English (en)
French (fr)
Other versions
WO2001065606A2 (de
Inventor
Thomas Neidhart
Carsten Schaeffer
Guenter Schagerl
Original Assignee
Infineon Technologies Ag
Thomas Neidhart
Carsten Schaeffer
Guenter Schagerl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Ag, Thomas Neidhart, Carsten Schaeffer, Guenter Schagerl filed Critical Infineon Technologies Ag
Publication of WO2001065606A2 publication Critical patent/WO2001065606A2/de
Publication of WO2001065606A3 publication Critical patent/WO2001065606A3/de
Priority to US10/229,980 priority Critical patent/US20030060014A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
    • H01L29/66333—Vertical insulated gate bipolar transistors
    • H01L29/66348—Vertical insulated gate bipolar transistors with a recessed gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
    • H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
    • H—ELECTRICITY
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    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41766—Source or drain electrodes for field effect devices with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
    • H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out

Abstract

Die Erfindung betrifft eine Feldeffekt-Transistoranordnung, bei der zur Erhöhung der Latch-up-Festigkeit das Sourcegebiet (6) in selbstjustierter Weise sich entlang eines Grabens (2) bis unter das hochdotierte Basisgebiet (8) erstreckt.
PCT/DE2001/000617 2000-02-28 2001-02-14 Feldeffekt-transistoranordnung mit hoher latch-up-festigkeit und verfahren zu deren herstellung WO2001065606A2 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US10/229,980 US20030060014A1 (en) 2000-02-28 2002-08-28 Field effect transistor configuration with high latch-up resistance, and method for its production

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10009345A DE10009345C1 (de) 2000-02-28 2000-02-28 Feldeffekt-Transistoranordnung mit hoher Latch-up-Festigkeit und Verfahren zu deren Herstellung
DE10009345.0 2000-02-28

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US10/229,980 Continuation US20030060014A1 (en) 2000-02-28 2002-08-28 Field effect transistor configuration with high latch-up resistance, and method for its production

Publications (2)

Publication Number Publication Date
WO2001065606A2 WO2001065606A2 (de) 2001-09-07
WO2001065606A3 true WO2001065606A3 (de) 2002-02-14

Family

ID=7632700

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2001/000617 WO2001065606A2 (de) 2000-02-28 2001-02-14 Feldeffekt-transistoranordnung mit hoher latch-up-festigkeit und verfahren zu deren herstellung

Country Status (3)

Country Link
US (1) US20030060014A1 (de)
DE (1) DE10009345C1 (de)
WO (1) WO2001065606A2 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100729923B1 (ko) * 2005-03-31 2007-06-18 주식회사 하이닉스반도체 스텝 ｓｔｉ 프로파일을 이용한 낸드 플래쉬 메모리 소자의트랜지스터 형성방법
US7880200B2 (en) * 2007-09-28 2011-02-01 Infineon Technologies Austria Ag Semiconductor device including a free wheeling diode
JP2010147219A (ja) * 2008-12-18 2010-07-01 Renesas Electronics Corp 半導体装置及びその製造方法
DE102015118616B3 (de) * 2015-10-30 2017-04-13 Infineon Technologies Austria Ag Latchup-fester Transistor
CN109873032A (zh) * 2017-12-05 2019-06-11 株洲中车时代电气股份有限公司 一种沟槽栅igbt器件及其制造方法
CN111540783B (zh) * 2020-01-16 2023-09-26 重庆康佳光电科技有限公司 一种金属-氧化物半导体场效应晶体管及其制备方法
EP4258360A1 (de) * 2022-04-04 2023-10-11 Hitachi Energy Switzerland AG Herstellungsverfahren für ein halbleiterbauelement und halbleiterbauelement

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01185976A (ja) * 1988-01-20 1989-07-25 Mitsubishi Electric Corp パワーｍｏｓ−ｆｅｔ
JPH01198076A (ja) * 1988-02-02 1989-08-09 Mitsubishi Electric Corp 半導体装置
JPH0493083A (ja) * 1990-08-08 1992-03-25 Matsushita Electron Corp 半導体装置およびその製造方法
WO1997000536A1 (en) * 1995-06-14 1997-01-03 Totem Semiconductor Ltd Semiconductor device fabrication
EP0755076A2 (de) * 1995-07-21 1997-01-22 Mitsubishi Denki Kabushiki Kaisha Vertikale MOS-Halbleiteranordnung mit versenktem Gate und Herstellungsverfahren
US5895951A (en) * 1996-04-05 1999-04-20 Megamos Corporation MOSFET structure and fabrication process implemented by forming deep and narrow doping regions through doping trenches
WO2000038244A1 (de) * 1998-12-18 2000-06-29 Infineon Technologies Ag Feldeffekt-transistoranordnung mit einer grabenförmigen gate-elektrode und einer zusätzlichen hochdotierten schicht im bodygebiet

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9313843D0 (en) * 1993-07-05 1993-08-18 Philips Electronics Uk Ltd A semiconductor device comprising an insulated gate field effect transistor
WO1997007548A1 (en) * 1995-08-21 1997-02-27 Siliconix Incorporated Low voltage short channel trench dmos transistor
JP3521648B2 (ja) * 1996-09-30 2004-04-19 株式会社デンソー 半導体装置の製造方法
DE19750827A1 (de) * 1997-11-17 1999-05-20 Asea Brown Boveri Leistungshalbleiterbauelement mit Emitterinjektionssteuerung

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01185976A (ja) * 1988-01-20 1989-07-25 Mitsubishi Electric Corp パワーｍｏｓ−ｆｅｔ
JPH01198076A (ja) * 1988-02-02 1989-08-09 Mitsubishi Electric Corp 半導体装置
JPH0493083A (ja) * 1990-08-08 1992-03-25 Matsushita Electron Corp 半導体装置およびその製造方法
WO1997000536A1 (en) * 1995-06-14 1997-01-03 Totem Semiconductor Ltd Semiconductor device fabrication
EP0755076A2 (de) * 1995-07-21 1997-01-22 Mitsubishi Denki Kabushiki Kaisha Vertikale MOS-Halbleiteranordnung mit versenktem Gate und Herstellungsverfahren
US5895951A (en) * 1996-04-05 1999-04-20 Megamos Corporation MOSFET structure and fabrication process implemented by forming deep and narrow doping regions through doping trenches
WO2000038244A1 (de) * 1998-12-18 2000-06-29 Infineon Technologies Ag Feldeffekt-transistoranordnung mit einer grabenförmigen gate-elektrode und einer zusätzlichen hochdotierten schicht im bodygebiet

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 013, no. 474 (E - 836) 26 October 1989 (1989-10-26) *
PATENT ABSTRACTS OF JAPAN vol. 013, no. 493 (E - 842) 8 November 1989 (1989-11-08) *
PATENT ABSTRACTS OF JAPAN vol. 016, no. 322 (E - 1233) 14 July 1992 (1992-07-14) *

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Publication number Publication date
US20030060014A1 (en) 2003-03-27
WO2001065606A2 (de) 2001-09-07
DE10009345C1 (de) 2001-07-19

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