WO2001063362A3 - Resist materials for 157-nm lithography - Google Patents

Resist materials for 157-nm lithography Download PDF

Info

Publication number
WO2001063362A3
WO2001063362A3 PCT/US2001/005907 US0105907W WO0163362A3 WO 2001063362 A3 WO2001063362 A3 WO 2001063362A3 US 0105907 W US0105907 W US 0105907W WO 0163362 A3 WO0163362 A3 WO 0163362A3
Authority
WO
WIPO (PCT)
Prior art keywords
resin composition
sensitive resin
radiation sensitive
lithography
resist materials
Prior art date
Application number
PCT/US2001/005907
Other languages
French (fr)
Other versions
WO2001063362A2 (en
Inventor
Theodore H Fedynyshyn
Original Assignee
Massachusetts Inst Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Massachusetts Inst Technology filed Critical Massachusetts Inst Technology
Priority to EP01911149A priority Critical patent/EP1257880A2/en
Priority to JP2001562262A priority patent/JP2003524211A/en
Publication of WO2001063362A2 publication Critical patent/WO2001063362A2/en
Publication of WO2001063362A3 publication Critical patent/WO2001063362A3/en

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0045Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0046Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055Radiation sensitive composition or product or process of making
    • Y10S430/106Binder containing
    • Y10S430/108Polyolefin or halogen containing
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055Radiation sensitive composition or product or process of making
    • Y10S430/106Binder containing
    • Y10S430/111Polymer of unsaturated acid or ester
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055Radiation sensitive composition or product or process of making
    • Y10S430/114Initiator containing
    • Y10S430/115Cationic or anionic

Abstract

A radiation sensitive resin composition including a photo-acid generator and an aliphatic polymer having one or more electron withdrawing groups adjacent to or attached to a carbon atom bearing a protected hydroxyl group, wherein the protecting group is labile in the presence of in situ generated acid is described. The radiation sensitive resin composition can be used as a resist suitable for image transfer by plasma etching and enable one to obtain an etching image having high precision with high reproducibility with a high degree of resolution and selectivity.
PCT/US2001/005907 2000-02-25 2001-02-26 Resist materials for 157-nm lithography WO2001063362A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP01911149A EP1257880A2 (en) 2000-02-25 2001-02-26 Resist materials for 157-nm lithography
JP2001562262A JP2003524211A (en) 2000-02-25 2001-02-26 Resist material for 157nm lithography

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/513,792 2000-02-25
US09/513,792 US6468712B1 (en) 2000-02-25 2000-02-25 Resist materials for 157-nm lithography

Publications (2)

Publication Number Publication Date
WO2001063362A2 WO2001063362A2 (en) 2001-08-30
WO2001063362A3 true WO2001063362A3 (en) 2002-03-07

Family

ID=24044693

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/005907 WO2001063362A2 (en) 2000-02-25 2001-02-26 Resist materials for 157-nm lithography

Country Status (4)

Country Link
US (2) US6468712B1 (en)
EP (1) EP1257880A2 (en)
JP (1) JP2003524211A (en)
WO (1) WO2001063362A2 (en)

Families Citing this family (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6790587B1 (en) * 1999-05-04 2004-09-14 E. I. Du Pont De Nemours And Company Fluorinated polymers, photoresists and processes for microlithography
JP4923376B2 (en) * 2000-04-04 2012-04-25 ダイキン工業株式会社 Novel fluoropolymer having acid-reactive group and chemically amplified photoresist composition using the same
US6878501B2 (en) * 2000-04-27 2005-04-12 Shin-Etsu Chemical Co., Ltd. Polymer, chemically amplified resist composition and patterning process
JP4838437B2 (en) * 2000-06-16 2011-12-14 Jsr株式会社 Radiation sensitive resin composition
AU2001274579A1 (en) 2000-06-21 2002-01-02 Asahi Glass Company, Limited Resist composition
US6749986B2 (en) * 2000-09-08 2004-06-15 Shipley Company, L.L.C. Polymers and photoresist compositions for short wavelength imaging
JP4199914B2 (en) * 2000-11-29 2008-12-24 富士フイルム株式会社 Positive resist composition
US6469220B2 (en) * 2000-12-25 2002-10-22 Shin-Etsu Chemical Co., Ltd. Tertiary alcohol compounds having an alicyclic structure
CN1221861C (en) * 2001-02-09 2005-10-05 旭硝子株式会社 Protective film composition
US6858379B2 (en) * 2001-03-22 2005-02-22 Shipley Company, L.L.C. Photoresist compositions for short wavelength imaging
EP1415974B1 (en) * 2001-07-12 2017-03-01 Daikin Industries, Ltd. Process for production of fluorine-containing norbornene derivatives
JP2003082042A (en) 2001-09-07 2003-03-19 Jsr Corp Radiation-sensitive resin composition for barrier plate formation, barrier plate, and display device
TWI278012B (en) * 2001-09-13 2007-04-01 Matsushita Electric Ind Co Ltd Pattern forming material and method of pattern formation
EP1476788A2 (en) * 2002-02-21 2004-11-17 Honeywell International Inc. Fluorinated molecules and methods of making and using same
JP3841400B2 (en) 2002-02-26 2006-11-01 富士写真フイルム株式会社 Positive resist composition
US7108951B2 (en) * 2002-02-26 2006-09-19 Fuji Photo Film Co., Ltd. Photosensitive resin composition
JP4010160B2 (en) * 2002-03-04 2007-11-21 旭硝子株式会社 Resist composition
US20040191670A1 (en) * 2002-10-23 2004-09-30 Sumitomo Chemical Company, Limited Chemical amplification type positive resist composition
WO2004041760A2 (en) * 2002-11-05 2004-05-21 Honeywell International Inc. Fluorinated polymers
US20040091813A1 (en) * 2002-11-05 2004-05-13 Honeywell International Inc. Fluorinated polymers
WO2004041877A1 (en) * 2002-11-07 2004-05-21 Asahi Glass Company, Limited Fluoropolymer
AU2003277581A1 (en) * 2002-11-07 2004-06-07 Asahi Glass Company, Limited Resist composition
US6919160B2 (en) 2003-02-20 2005-07-19 Air Products And Chemicals, Inc. Acrylic compounds for sub-200 nm photoresist compositions and methods for making and using same
WO2004074928A2 (en) * 2003-02-21 2004-09-02 Az Electronic Materials Usa Corp. Photoresist composition for deep ultraviolet lithography
US20040166434A1 (en) * 2003-02-21 2004-08-26 Dammel Ralph R. Photoresist composition for deep ultraviolet lithography
US7150957B2 (en) * 2003-04-25 2006-12-19 International Business Machines Corporation Fluorinated vinyl ethers, copolymers thereof, and use in lithographic photoresist compositions
KR101057570B1 (en) * 2003-06-26 2011-08-17 제이에스알 가부시끼가이샤 Photoresist Polymer Composition
JP2007522262A (en) * 2003-06-26 2007-08-09 シミックス・テクノロジーズ・インコーポレイテッド Photoresist polymer
US7250475B2 (en) 2003-06-26 2007-07-31 Symyx Technologies, Inc. Synthesis of photoresist polymers
JP2005060664A (en) 2003-07-31 2005-03-10 Asahi Glass Co Ltd Fluorine containing compound, fluorine containing polymer and production process for the same, and resist composition containing the same
US7138550B2 (en) 2003-08-04 2006-11-21 Air Products And Chemicals, Inc. Bridged carbocyclic compounds and methods of making and using same
US7163982B2 (en) 2003-08-13 2007-01-16 Daiki Industries, Ltd. Process for preparing fluorine-containing polymer and method of forming fine pattern using same
KR20060132793A (en) 2003-10-31 2006-12-22 아사히 가라스 가부시키가이샤 Fluorine compound, fluoropolymer, and process for producing the same
JP2005162861A (en) * 2003-12-02 2005-06-23 Asahi Glass Co Ltd Fluorine-containing polymer
JP4407358B2 (en) * 2004-04-14 2010-02-03 旭硝子株式会社 Fluoropolymer and resist composition
US20060008730A1 (en) * 2004-07-09 2006-01-12 Puy Michael V D Monomers for photoresists bearing acid-labile groups of reduced optical density
US20060008731A1 (en) * 2004-07-09 2006-01-12 Michael Van Der Puy Novel photoresist monomers and polymers
US7901864B2 (en) * 2004-09-23 2011-03-08 International Business Machines Corporation Radiation-sensitive composition and method of fabricating a device using the radiation-sensitive composition
US8946200B2 (en) * 2006-11-02 2015-02-03 Southwest Research Institute Pharmaceutically active nanosuspensions
US8404850B2 (en) 2008-03-13 2013-03-26 Southwest Research Institute Bis-quaternary pyridinium-aldoxime salts and treatment of exposure to cholinesterase inhibitors
US8722706B2 (en) 2008-08-15 2014-05-13 Southwest Research Institute Two phase bioactive formulations of bis-quaternary pyridinium oxime sulfonate salts
JP2010085921A (en) * 2008-10-02 2010-04-15 Panasonic Corp Resist material and pattern forming method using the same
US8309134B2 (en) 2008-10-03 2012-11-13 Southwest Research Institute Modified calcium phosphate nanoparticle formation
US9028873B2 (en) 2010-02-08 2015-05-12 Southwest Research Institute Nanoparticles for drug delivery to the central nervous system

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4207261A1 (en) * 1992-03-07 1993-09-09 Hoechst Ag Styrene monomers with 2,2-bis-tri:fluoro-methyl-oxy:ethano bridging gps. - useful for prodn. of polymeric binders for radiation-sensitive, positive and negative deep-UV resists
JPH0950126A (en) * 1995-08-08 1997-02-18 Fujitsu Ltd Resist composition and resist pattern forming method
EP0875789A1 (en) * 1997-04-30 1998-11-04 Wako Pure Chemical Industries Ltd Resist composition and its use for forming pattern
EP0880075A1 (en) * 1997-05-22 1998-11-25 JSR Corporation Radiation sensitive resin composition
WO2000017712A1 (en) * 1998-09-23 2000-03-30 E.I. Du Pont De Nemours And Company Photoresists, polymers and processes for microlithography
EP1035441A1 (en) * 1999-03-09 2000-09-13 Matsushita Electric Industrial Co., Ltd. Pattern formation method
WO2001037047A2 (en) * 1999-11-17 2001-05-25 E.I. Du Pont De Nemours And Company Nitrile/fluoroalcohol polymer-containing photoresists and associated processes for microlithography

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3041317A (en) 1960-05-02 1962-06-26 Du Pont Fluorocarbon sulfonyl fluorides
US3624053A (en) 1963-06-24 1971-11-30 Du Pont Trifluorovinyl sulfonic acid polymers
US3282875A (en) 1964-07-22 1966-11-01 Du Pont Fluorocarbon vinyl ether polymers
US4632881A (en) 1984-10-12 1986-12-30 Olin Corporation Pyrithione-containing bioactive polymers and their use in paint and wood perservative products
US4596864A (en) 1984-10-12 1986-06-24 Olin Corporation Pyrithione-containing bioactive polymers and their use in paint and wood preservative products
JP2623309B2 (en) 1988-02-22 1997-06-25 ユーシービー ソシエテ アノニム How to get a resist pattern
US4985337A (en) 1988-11-15 1991-01-15 Konica Corporation Image forming method and element, in which the element contains a release layer and a photosensitive o-quinone diaziode layer
US5391465A (en) 1989-06-20 1995-02-21 Rohm And Haas Company Method of using selected photoactive compounds in high resolution, acid hardening photoresists with near ultraviolet radiation wherein the photoresist comprise conventional deep UV photoacid generators
US5212046A (en) 1989-10-17 1993-05-18 Shipley Company Inc. Near UV photoresist
US5362606A (en) 1989-10-18 1994-11-08 Massachusetts Institute Of Technology Positive resist pattern formation through focused ion beam exposure and surface barrier silylation
US5292614A (en) 1991-08-02 1994-03-08 Mitsubishi Kasei Corporation Negative photosensitive composition and method for forming a resist pattern
US5302490A (en) 1991-10-21 1994-04-12 Shipley Company Inc. Radiation sensitive compositions comprising blends of an aliphatic novolak resin and an aromatic novolak resin
JP3078153B2 (en) 1993-07-08 2000-08-21 富士写真フイルム株式会社 Photosensitive composition
JP2715881B2 (en) 1993-12-28 1998-02-18 日本電気株式会社 Photosensitive resin composition and pattern forming method
JP3461377B2 (en) 1994-04-18 2003-10-27 富士写真フイルム株式会社 Image recording material
EP0709410A3 (en) 1994-10-26 1997-03-26 Ocg Microelectronic Materials Polymers
US5658708A (en) 1995-02-17 1997-08-19 Fuji Photo Film Co., Ltd. Image recording material
US5900346A (en) 1995-04-06 1999-05-04 Shipley Company, L.L.C. Compositions comprising photoactivator, acid, generator and chain extender
JPH0950129A (en) 1995-05-30 1997-02-18 Shin Etsu Chem Co Ltd Antireflection film material and pattern forming method
JP3382081B2 (en) 1995-06-01 2003-03-04 株式会社東芝 Resist and pattern forming method using the same
US5952150A (en) 1995-06-08 1999-09-14 Jsr Corporation Radiation sensitive resin composition
JPH0990622A (en) 1995-09-22 1997-04-04 Fuji Photo Film Co Ltd Positive photoresist composition
JP3589365B2 (en) 1996-02-02 2004-11-17 富士写真フイルム株式会社 Positive image forming composition
JP3587325B2 (en) 1996-03-08 2004-11-10 富士写真フイルム株式会社 Positive photosensitive composition
US5935733A (en) 1996-04-05 1999-08-10 Intel Corporation Photolithography mask and method of fabrication
US5876899A (en) 1996-09-18 1999-03-02 Shipley Company, L.L.C. Photoresist compositions
US6042991A (en) * 1997-02-18 2000-03-28 Fuji Photo Film Co., Ltd. Positive working photosensitive composition
IL145653A0 (en) 1999-05-04 2002-06-30 Du Pont Fluorinated polymers, photoresists and processes for microlithography

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4207261A1 (en) * 1992-03-07 1993-09-09 Hoechst Ag Styrene monomers with 2,2-bis-tri:fluoro-methyl-oxy:ethano bridging gps. - useful for prodn. of polymeric binders for radiation-sensitive, positive and negative deep-UV resists
JPH0950126A (en) * 1995-08-08 1997-02-18 Fujitsu Ltd Resist composition and resist pattern forming method
EP0875789A1 (en) * 1997-04-30 1998-11-04 Wako Pure Chemical Industries Ltd Resist composition and its use for forming pattern
EP0880075A1 (en) * 1997-05-22 1998-11-25 JSR Corporation Radiation sensitive resin composition
WO2000017712A1 (en) * 1998-09-23 2000-03-30 E.I. Du Pont De Nemours And Company Photoresists, polymers and processes for microlithography
EP1035441A1 (en) * 1999-03-09 2000-09-13 Matsushita Electric Industrial Co., Ltd. Pattern formation method
WO2001037047A2 (en) * 1999-11-17 2001-05-25 E.I. Du Pont De Nemours And Company Nitrile/fluoroalcohol polymer-containing photoresists and associated processes for microlithography

Also Published As

Publication number Publication date
EP1257880A2 (en) 2002-11-20
US6815145B2 (en) 2004-11-09
US6468712B1 (en) 2002-10-22
JP2003524211A (en) 2003-08-12
WO2001063362A2 (en) 2001-08-30
US20030157431A1 (en) 2003-08-21

Similar Documents

Publication Publication Date Title
WO2001063362A3 (en) Resist materials for 157-nm lithography
WO2002044845A3 (en) Protecting groups in polymers, photoresists and processes for microlithography
TW200612203A (en) Resist composition and patterning process
ATE244904T1 (en) POLYMER COMPOSITION AND RECIST MATERIAL
KR970002472A (en) Chemical amplification type resist composition and method of forming resist pattern
EP0330406A3 (en) Radiation-sensitive resin composition
KR970071135A (en) Chemically amplified forged resist materials
DE60025297D1 (en) Radiation sensitive resin composition
TW200602809A (en) Positive resist composition and patterning process
KR960015081A (en) Chemically Amplified Resist Composition
EP2662727A3 (en) Compound for resist and radiation-sensitive composition
KR970066718A (en) Radiation-sensitive resin composition
KR960024672A (en) Chemically Amplified Forged Resist Compositions
EP1253470A3 (en) Radiation-sensitive resin composition
Lingnau et al. Recent trends in x-ray resists
KR970071136A (en) Chemically Amplified Positive Resist Materials
TW200745010A (en) Compound having acid dissociable group and radiation sensitive composition containing the same
KR970071129A (en) Di or triphenylmonoterpene hydrocarbon derivatives, dissolution control agents and chemically amplified forged resist materials
TW200632550A (en) Negative resist composition and process for forming resist pattern
Seeger Chemically amplified resists for advanced lithography: Road to success or detour?
EP3460573A1 (en) Photosensitive composition and method of manufacturing graphene device
JPS58207041A (en) Radiosensitive polymer resist
EP1128220A3 (en) Developing process, process for forming pattern and process for preparing semiconductor device using same
Saito et al. A new positive electron-beam resist material composed of catechol derivatives
TW200712780A (en) High resolution silicon-containing resist

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): CA JP

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR

121 Ep: the epo has been informed by wipo that ep was designated in this application
DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
AK Designated states

Kind code of ref document: A3

Designated state(s): CA JP

AL Designated countries for regional patents

Kind code of ref document: A3

Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR

ENP Entry into the national phase

Ref country code: JP

Ref document number: 2001 562262

Kind code of ref document: A

Format of ref document f/p: F

WWE Wipo information: entry into national phase

Ref document number: 2001911149

Country of ref document: EP

WWP Wipo information: published in national office

Ref document number: 2001911149

Country of ref document: EP

WWW Wipo information: withdrawn in national office

Ref document number: 2001911149

Country of ref document: EP