WO2001063362A3 - Resist materials for 157-nm lithography - Google Patents
Resist materials for 157-nm lithography Download PDFInfo
- Publication number
- WO2001063362A3 WO2001063362A3 PCT/US2001/005907 US0105907W WO0163362A3 WO 2001063362 A3 WO2001063362 A3 WO 2001063362A3 US 0105907 W US0105907 W US 0105907W WO 0163362 A3 WO0163362 A3 WO 0163362A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- resin composition
- sensitive resin
- radiation sensitive
- lithography
- resist materials
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
- Y10S430/108—Polyolefin or halogen containing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
- Y10S430/111—Polymer of unsaturated acid or ester
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/114—Initiator containing
- Y10S430/115—Cationic or anionic
Abstract
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP01911149A EP1257880A2 (en) | 2000-02-25 | 2001-02-26 | Resist materials for 157-nm lithography |
JP2001562262A JP2003524211A (en) | 2000-02-25 | 2001-02-26 | Resist material for 157nm lithography |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/513,792 | 2000-02-25 | ||
US09/513,792 US6468712B1 (en) | 2000-02-25 | 2000-02-25 | Resist materials for 157-nm lithography |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2001063362A2 WO2001063362A2 (en) | 2001-08-30 |
WO2001063362A3 true WO2001063362A3 (en) | 2002-03-07 |
Family
ID=24044693
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2001/005907 WO2001063362A2 (en) | 2000-02-25 | 2001-02-26 | Resist materials for 157-nm lithography |
Country Status (4)
Country | Link |
---|---|
US (2) | US6468712B1 (en) |
EP (1) | EP1257880A2 (en) |
JP (1) | JP2003524211A (en) |
WO (1) | WO2001063362A2 (en) |
Families Citing this family (44)
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US6790587B1 (en) * | 1999-05-04 | 2004-09-14 | E. I. Du Pont De Nemours And Company | Fluorinated polymers, photoresists and processes for microlithography |
JP4923376B2 (en) * | 2000-04-04 | 2012-04-25 | ダイキン工業株式会社 | Novel fluoropolymer having acid-reactive group and chemically amplified photoresist composition using the same |
US6878501B2 (en) * | 2000-04-27 | 2005-04-12 | Shin-Etsu Chemical Co., Ltd. | Polymer, chemically amplified resist composition and patterning process |
JP4838437B2 (en) * | 2000-06-16 | 2011-12-14 | Jsr株式会社 | Radiation sensitive resin composition |
AU2001274579A1 (en) | 2000-06-21 | 2002-01-02 | Asahi Glass Company, Limited | Resist composition |
US6749986B2 (en) * | 2000-09-08 | 2004-06-15 | Shipley Company, L.L.C. | Polymers and photoresist compositions for short wavelength imaging |
JP4199914B2 (en) * | 2000-11-29 | 2008-12-24 | 富士フイルム株式会社 | Positive resist composition |
US6469220B2 (en) * | 2000-12-25 | 2002-10-22 | Shin-Etsu Chemical Co., Ltd. | Tertiary alcohol compounds having an alicyclic structure |
CN1221861C (en) * | 2001-02-09 | 2005-10-05 | 旭硝子株式会社 | Protective film composition |
US6858379B2 (en) * | 2001-03-22 | 2005-02-22 | Shipley Company, L.L.C. | Photoresist compositions for short wavelength imaging |
EP1415974B1 (en) * | 2001-07-12 | 2017-03-01 | Daikin Industries, Ltd. | Process for production of fluorine-containing norbornene derivatives |
JP2003082042A (en) | 2001-09-07 | 2003-03-19 | Jsr Corp | Radiation-sensitive resin composition for barrier plate formation, barrier plate, and display device |
TWI278012B (en) * | 2001-09-13 | 2007-04-01 | Matsushita Electric Ind Co Ltd | Pattern forming material and method of pattern formation |
EP1476788A2 (en) * | 2002-02-21 | 2004-11-17 | Honeywell International Inc. | Fluorinated molecules and methods of making and using same |
JP3841400B2 (en) | 2002-02-26 | 2006-11-01 | 富士写真フイルム株式会社 | Positive resist composition |
US7108951B2 (en) * | 2002-02-26 | 2006-09-19 | Fuji Photo Film Co., Ltd. | Photosensitive resin composition |
JP4010160B2 (en) * | 2002-03-04 | 2007-11-21 | 旭硝子株式会社 | Resist composition |
US20040191670A1 (en) * | 2002-10-23 | 2004-09-30 | Sumitomo Chemical Company, Limited | Chemical amplification type positive resist composition |
WO2004041760A2 (en) * | 2002-11-05 | 2004-05-21 | Honeywell International Inc. | Fluorinated polymers |
US20040091813A1 (en) * | 2002-11-05 | 2004-05-13 | Honeywell International Inc. | Fluorinated polymers |
WO2004041877A1 (en) * | 2002-11-07 | 2004-05-21 | Asahi Glass Company, Limited | Fluoropolymer |
AU2003277581A1 (en) * | 2002-11-07 | 2004-06-07 | Asahi Glass Company, Limited | Resist composition |
US6919160B2 (en) | 2003-02-20 | 2005-07-19 | Air Products And Chemicals, Inc. | Acrylic compounds for sub-200 nm photoresist compositions and methods for making and using same |
WO2004074928A2 (en) * | 2003-02-21 | 2004-09-02 | Az Electronic Materials Usa Corp. | Photoresist composition for deep ultraviolet lithography |
US20040166434A1 (en) * | 2003-02-21 | 2004-08-26 | Dammel Ralph R. | Photoresist composition for deep ultraviolet lithography |
US7150957B2 (en) * | 2003-04-25 | 2006-12-19 | International Business Machines Corporation | Fluorinated vinyl ethers, copolymers thereof, and use in lithographic photoresist compositions |
KR101057570B1 (en) * | 2003-06-26 | 2011-08-17 | 제이에스알 가부시끼가이샤 | Photoresist Polymer Composition |
JP2007522262A (en) * | 2003-06-26 | 2007-08-09 | シミックス・テクノロジーズ・インコーポレイテッド | Photoresist polymer |
US7250475B2 (en) | 2003-06-26 | 2007-07-31 | Symyx Technologies, Inc. | Synthesis of photoresist polymers |
JP2005060664A (en) | 2003-07-31 | 2005-03-10 | Asahi Glass Co Ltd | Fluorine containing compound, fluorine containing polymer and production process for the same, and resist composition containing the same |
US7138550B2 (en) | 2003-08-04 | 2006-11-21 | Air Products And Chemicals, Inc. | Bridged carbocyclic compounds and methods of making and using same |
US7163982B2 (en) | 2003-08-13 | 2007-01-16 | Daiki Industries, Ltd. | Process for preparing fluorine-containing polymer and method of forming fine pattern using same |
KR20060132793A (en) | 2003-10-31 | 2006-12-22 | 아사히 가라스 가부시키가이샤 | Fluorine compound, fluoropolymer, and process for producing the same |
JP2005162861A (en) * | 2003-12-02 | 2005-06-23 | Asahi Glass Co Ltd | Fluorine-containing polymer |
JP4407358B2 (en) * | 2004-04-14 | 2010-02-03 | 旭硝子株式会社 | Fluoropolymer and resist composition |
US20060008730A1 (en) * | 2004-07-09 | 2006-01-12 | Puy Michael V D | Monomers for photoresists bearing acid-labile groups of reduced optical density |
US20060008731A1 (en) * | 2004-07-09 | 2006-01-12 | Michael Van Der Puy | Novel photoresist monomers and polymers |
US7901864B2 (en) * | 2004-09-23 | 2011-03-08 | International Business Machines Corporation | Radiation-sensitive composition and method of fabricating a device using the radiation-sensitive composition |
US8946200B2 (en) * | 2006-11-02 | 2015-02-03 | Southwest Research Institute | Pharmaceutically active nanosuspensions |
US8404850B2 (en) | 2008-03-13 | 2013-03-26 | Southwest Research Institute | Bis-quaternary pyridinium-aldoxime salts and treatment of exposure to cholinesterase inhibitors |
US8722706B2 (en) | 2008-08-15 | 2014-05-13 | Southwest Research Institute | Two phase bioactive formulations of bis-quaternary pyridinium oxime sulfonate salts |
JP2010085921A (en) * | 2008-10-02 | 2010-04-15 | Panasonic Corp | Resist material and pattern forming method using the same |
US8309134B2 (en) | 2008-10-03 | 2012-11-13 | Southwest Research Institute | Modified calcium phosphate nanoparticle formation |
US9028873B2 (en) | 2010-02-08 | 2015-05-12 | Southwest Research Institute | Nanoparticles for drug delivery to the central nervous system |
Citations (7)
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DE4207261A1 (en) * | 1992-03-07 | 1993-09-09 | Hoechst Ag | Styrene monomers with 2,2-bis-tri:fluoro-methyl-oxy:ethano bridging gps. - useful for prodn. of polymeric binders for radiation-sensitive, positive and negative deep-UV resists |
JPH0950126A (en) * | 1995-08-08 | 1997-02-18 | Fujitsu Ltd | Resist composition and resist pattern forming method |
EP0875789A1 (en) * | 1997-04-30 | 1998-11-04 | Wako Pure Chemical Industries Ltd | Resist composition and its use for forming pattern |
EP0880075A1 (en) * | 1997-05-22 | 1998-11-25 | JSR Corporation | Radiation sensitive resin composition |
WO2000017712A1 (en) * | 1998-09-23 | 2000-03-30 | E.I. Du Pont De Nemours And Company | Photoresists, polymers and processes for microlithography |
EP1035441A1 (en) * | 1999-03-09 | 2000-09-13 | Matsushita Electric Industrial Co., Ltd. | Pattern formation method |
WO2001037047A2 (en) * | 1999-11-17 | 2001-05-25 | E.I. Du Pont De Nemours And Company | Nitrile/fluoroalcohol polymer-containing photoresists and associated processes for microlithography |
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-
2000
- 2000-02-25 US US09/513,792 patent/US6468712B1/en not_active Expired - Fee Related
-
2001
- 2001-02-26 WO PCT/US2001/005907 patent/WO2001063362A2/en not_active Application Discontinuation
- 2001-02-26 EP EP01911149A patent/EP1257880A2/en not_active Withdrawn
- 2001-02-26 JP JP2001562262A patent/JP2003524211A/en not_active Withdrawn
-
2002
- 2002-10-16 US US10/271,807 patent/US6815145B2/en not_active Expired - Fee Related
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4207261A1 (en) * | 1992-03-07 | 1993-09-09 | Hoechst Ag | Styrene monomers with 2,2-bis-tri:fluoro-methyl-oxy:ethano bridging gps. - useful for prodn. of polymeric binders for radiation-sensitive, positive and negative deep-UV resists |
JPH0950126A (en) * | 1995-08-08 | 1997-02-18 | Fujitsu Ltd | Resist composition and resist pattern forming method |
EP0875789A1 (en) * | 1997-04-30 | 1998-11-04 | Wako Pure Chemical Industries Ltd | Resist composition and its use for forming pattern |
EP0880075A1 (en) * | 1997-05-22 | 1998-11-25 | JSR Corporation | Radiation sensitive resin composition |
WO2000017712A1 (en) * | 1998-09-23 | 2000-03-30 | E.I. Du Pont De Nemours And Company | Photoresists, polymers and processes for microlithography |
EP1035441A1 (en) * | 1999-03-09 | 2000-09-13 | Matsushita Electric Industrial Co., Ltd. | Pattern formation method |
WO2001037047A2 (en) * | 1999-11-17 | 2001-05-25 | E.I. Du Pont De Nemours And Company | Nitrile/fluoroalcohol polymer-containing photoresists and associated processes for microlithography |
Also Published As
Publication number | Publication date |
---|---|
EP1257880A2 (en) | 2002-11-20 |
US6815145B2 (en) | 2004-11-09 |
US6468712B1 (en) | 2002-10-22 |
JP2003524211A (en) | 2003-08-12 |
WO2001063362A2 (en) | 2001-08-30 |
US20030157431A1 (en) | 2003-08-21 |
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