WO2001061743A1 - Method for low temperature bonding and bonded structure - Google Patents
Method for low temperature bonding and bonded structure Download PDFInfo
- Publication number
- WO2001061743A1 WO2001061743A1 PCT/US2001/003683 US0103683W WO0161743A1 WO 2001061743 A1 WO2001061743 A1 WO 2001061743A1 US 0103683 W US0103683 W US 0103683W WO 0161743 A1 WO0161743 A1 WO 0161743A1
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- Prior art keywords
- bonding
- recited
- forming
- bonding surfaces
- etching
- Prior art date
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- Y10T156/1043—Subsequent to assembly
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Pressure Welding/Diffusion-Bonding (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
Claims
Priority Applications (6)
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EP01912694A EP1275142A4 (en) | 2000-02-16 | 2001-02-15 | Method for low temperature bonding and bonded structure |
KR1020117015751A KR101298859B1 (en) | 2000-02-16 | 2001-02-15 | Method For Low Temperature Bonding And Bonded Structure |
AU2001241447A AU2001241447A1 (en) | 2000-02-16 | 2001-02-15 | Method for low temperature bonding and bonded structure |
KR1020027010561A KR20020081328A (en) | 2000-02-16 | 2001-02-15 | Method For Low Temperature Bonding And Bonded Structure |
CA2399282A CA2399282C (en) | 2000-02-16 | 2001-02-15 | Method for low temperature bonding and bonded structure |
JP2001560438A JP5496439B2 (en) | 2000-02-16 | 2001-02-15 | Low temperature bonding method and bonding composition |
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Application Number | Priority Date | Filing Date | Title |
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US09/505,283 US6902987B1 (en) | 2000-02-16 | 2000-02-16 | Method for low temperature bonding and bonded structure |
US09/505,283 | 2000-02-16 |
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WO2001061743A1 true WO2001061743A1 (en) | 2001-08-23 |
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PCT/US2001/003683 WO2001061743A1 (en) | 2000-02-16 | 2001-02-15 | Method for low temperature bonding and bonded structure |
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US (15) | US6902987B1 (en) |
EP (2) | EP1275142A4 (en) |
JP (3) | JP5496439B2 (en) |
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CA (1) | CA2399282C (en) |
WO (1) | WO2001061743A1 (en) |
Cited By (45)
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EP1277232A1 (en) * | 2000-03-22 | 2003-01-22 | Ziptronix, Inc. | Three dimensional device integration method and integrated device |
WO2003041130A2 (en) * | 2001-10-09 | 2003-05-15 | Dow Corning Corporation | Method for creating adhesion during fabrication of electronic devices |
WO2003054954A2 (en) * | 2001-12-19 | 2003-07-03 | Intel Corporation | Electrical/optical integration scheme using direct copper bonding |
FR2846788A1 (en) * | 2002-10-30 | 2004-05-07 | Soitec Silicon On Insulator | PROCESS FOR MANUFACTURING DISASSEMBLABLE SUBSTRATES |
FR2847077A1 (en) * | 2002-11-12 | 2004-05-14 | Soitec Silicon On Insulator | Production of semiconductor structure for microsystems with sensors or accelerators, involves forming first and second dielectric areas with first and second thicknesses, respectively, on semiconductor material substrate |
WO2004051729A2 (en) | 2002-12-04 | 2004-06-17 | Süss Mircro Tec Lithography Gmbh | Method and device for pre-treating surfaces of substrates to be bonded |
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WO2004105084A3 (en) * | 2003-05-19 | 2006-01-05 | Ziptronix Inc | Method of room temperature covalent bonding |
WO2006047052A1 (en) * | 2004-10-26 | 2006-05-04 | Hewlett-Packard Development Company, L.P. | Method for plasma enhanced bonding and bonded structures formed by plasma enhanced bonding |
US7126212B2 (en) | 1999-10-01 | 2006-10-24 | Ziptronix, Inc. | Three dimensional device integration method and integrated device |
US7262495B2 (en) | 2004-10-07 | 2007-08-28 | Hewlett-Packard Development Company, L.P. | 3D interconnect with protruding contacts |
CN100399537C (en) * | 2003-11-03 | 2008-07-02 | 国际商业机器公司 | Method for fabricating sige-on-insulator (SGOI) and ge-on-insulator (GOI) substrates |
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FR2923079A1 (en) * | 2007-10-26 | 2009-05-01 | Soitec Silicon On Insulator | SUBSTRATES SOI WITH INSULATED FINE LAYER ENTERREE |
US7563691B2 (en) | 2004-10-29 | 2009-07-21 | Hewlett-Packard Development Company, L.P. | Method for plasma enhanced bonding and bonded structures formed by plasma enhanced bonding |
WO2009106305A2 (en) * | 2008-02-27 | 2009-09-03 | Carl Zeiss Smt Ag | Method of bonding two components by,,fusion bonding" to form a bonded structure |
US7602070B2 (en) | 2003-02-07 | 2009-10-13 | Ziptronix, Inc. | Room temperature metal direct bonding |
US7601271B2 (en) * | 2005-11-28 | 2009-10-13 | S.O.I.Tec Silicon On Insulator Technologies | Process and equipment for bonding by molecular adhesion |
US7622324B2 (en) * | 2002-09-25 | 2009-11-24 | Ziptronix | Wafer bonding hermetic encapsulation |
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US8481406B2 (en) | 2010-07-15 | 2013-07-09 | Soitec | Methods of forming bonded semiconductor structures |
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US9331149B2 (en) | 2000-02-16 | 2016-05-03 | Ziptronix, Inc. | Method for low temperature bonding and bonded structure |
US9620479B1 (en) | 2016-06-30 | 2017-04-11 | International Business Machines Corporation | 3D bonded semiconductor structure with an embedded resistor |
US9640509B1 (en) | 2016-09-29 | 2017-05-02 | International Business Machines Corporation | Advanced metal-to-metal direct bonding |
US9716033B2 (en) | 2005-08-11 | 2017-07-25 | Ziptronix, Inc. | 3D IC method and device |
US9716088B1 (en) | 2016-06-30 | 2017-07-25 | International Business Machines Corporation | 3D bonded semiconductor structure with an embedded capacitor |
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