WO2001037383A3 - Group iii-nitride semiconductor structures with reduced phase separation - Google Patents

Group iii-nitride semiconductor structures with reduced phase separation Download PDF

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Publication number
WO2001037383A3
WO2001037383A3 PCT/IB2000/001681 IB0001681W WO0137383A3 WO 2001037383 A3 WO2001037383 A3 WO 2001037383A3 IB 0001681 W IB0001681 W IB 0001681W WO 0137383 A3 WO0137383 A3 WO 0137383A3
Authority
WO
WIPO (PCT)
Prior art keywords
phase separation
pentenary
quaternary
group iii
semiconductor structures
Prior art date
Application number
PCT/IB2000/001681
Other languages
French (fr)
Other versions
WO2001037383A2 (en
Inventor
Toru Takayama
Baba Takaaki
S Harris James Jr
Original Assignee
Matsushita Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/442,077 external-priority patent/US6903364B1/en
Application filed by Matsushita Electric Corp filed Critical Matsushita Electric Corp
Priority to JP2001537831A priority Critical patent/JP2003514402A/en
Publication of WO2001037383A2 publication Critical patent/WO2001037383A2/en
Publication of WO2001037383A3 publication Critical patent/WO2001037383A3/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H01L29/7371—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
    • H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type
    • H01L31/1035—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PN homojunction type the devices comprising active layers formed only by AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/2003—Nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Electromagnetism (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Light Receiving Elements (AREA)
  • Bipolar Transistors (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

Group III-nitride quaternary and pentenary material systems and methods are disclosed for use in semiconductor structures, including laser diodes, transistors, and photodetectors, which reduce or eliminate phase separation and provide increased emission efficiency. In an exemplary embodiment the semiconductor structure includes a first ternary, quaternary or pentenary material layer using BlnGaAlN material system of a first conduction type formed substantially without phase separation, and a quaternary or pentenary material active layer using BlnGaAlN material system substantially without phase separation, and a third ternary, quaternary or pentenary material layer using BlnGaAlN material system of an opposite conduction type formed substantially without phase separation.
PCT/IB2000/001681 1999-11-16 2000-11-15 Group iii-nitride semiconductor structures with reduced phase separation WO2001037383A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001537831A JP2003514402A (en) 1999-11-16 2000-11-15 Semiconductor structure and manufacturing method using group III nitride material with suppressed phase separation

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/442,077 US6903364B1 (en) 1999-03-26 1999-11-16 Semiconductor structures using a group III-nitride material system with reduced phase separation and method of fabrication
US09/442,077 1999-11-16

Publications (2)

Publication Number Publication Date
WO2001037383A2 WO2001037383A2 (en) 2001-05-25
WO2001037383A3 true WO2001037383A3 (en) 2001-10-04

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/IB2000/001681 WO2001037383A2 (en) 1999-11-16 2000-11-15 Group iii-nitride semiconductor structures with reduced phase separation

Country Status (2)

Country Link
JP (2) JP2003514402A (en)
WO (1) WO2001037383A2 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4977695B2 (en) * 2006-05-24 2012-07-18 学校法人 名城大学 Ultraviolet light receiving element
JP2009027022A (en) * 2007-07-20 2009-02-05 Rohm Co Ltd Nitride semiconductor light-emitting element
JP2012209297A (en) * 2011-03-29 2012-10-25 Mitsubishi Electric Corp Semiconductor device and method of manufacturing the same
JP6454981B2 (en) * 2014-04-24 2019-01-23 住友電気工業株式会社 Semiconductor laminate and light receiving element
WO2016125993A1 (en) * 2015-02-06 2016-08-11 서울바이오시스 주식회사 Ultraviolet light emitting diode
KR101773709B1 (en) 2016-05-09 2017-08-31 대구가톨릭대학교산학협력단 Ultraviolet Bx1Aly1Ga1-x1-y1N/Bx2Aly2Ga1-x2-y2N Quantum Well Light Emitting Diode Grown On AlN for Reducing Strain
JP7024534B2 (en) * 2018-03-20 2022-02-24 富士通株式会社 Semiconductor devices and their manufacturing methods

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06164055A (en) * 1992-11-25 1994-06-10 Asahi Chem Ind Co Ltd Quantum-well semiconductor laser
US5828684A (en) * 1995-12-29 1998-10-27 Xerox Corporation Dual polarization quantum well laser in the 200 to 600 nanometers range
US5834331A (en) * 1996-10-17 1998-11-10 Northwestern University Method for making III-Nitride laser and detection device
EP0951077A2 (en) * 1998-04-14 1999-10-20 Matsushita Electronics Corporation Method for growing nitride compound semiconductor
JPH11330633A (en) * 1999-04-26 1999-11-30 Sharp Corp Semiconductor light emitting device
WO2000059084A2 (en) * 1999-03-26 2000-10-05 Matsushita Electric Industrial Co., Ltd. Semiconductors structures using a group iii-nitride quaternary material system with reduced phase separation and method of fabrication

Family Cites Families (5)

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Publication number Priority date Publication date Assignee Title
JPH06152072A (en) * 1992-11-16 1994-05-31 Asahi Chem Ind Co Ltd Semiconductor laser
JP3484997B2 (en) * 1994-07-06 2004-01-06 日亜化学工業株式会社 Gallium nitride based compound semiconductor light emitting device
JPH08310900A (en) * 1995-05-10 1996-11-26 Sumitomo Electric Ind Ltd Thin-film single crystal of nitride and its production
JPH11233822A (en) * 1998-02-13 1999-08-27 Mitsubishi Materials Corp Nitride semiconductor light-emitting element
JPH11298090A (en) * 1998-04-09 1999-10-29 Nichia Chem Ind Ltd Nitride semiconductor element

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06164055A (en) * 1992-11-25 1994-06-10 Asahi Chem Ind Co Ltd Quantum-well semiconductor laser
US5828684A (en) * 1995-12-29 1998-10-27 Xerox Corporation Dual polarization quantum well laser in the 200 to 600 nanometers range
US5834331A (en) * 1996-10-17 1998-11-10 Northwestern University Method for making III-Nitride laser and detection device
EP0951077A2 (en) * 1998-04-14 1999-10-20 Matsushita Electronics Corporation Method for growing nitride compound semiconductor
WO2000059084A2 (en) * 1999-03-26 2000-10-05 Matsushita Electric Industrial Co., Ltd. Semiconductors structures using a group iii-nitride quaternary material system with reduced phase separation and method of fabrication
JPH11330633A (en) * 1999-04-26 1999-11-30 Sharp Corp Semiconductor light emitting device

Non-Patent Citations (6)

* Cited by examiner, † Cited by third party
Title
KAWANISHI H ET AL: "BAlGaN system and MOVPE growth on (0001)6H-SiC substrate", OPTOELECTRONIC DEVICES, SAN JOSE, 1997, vol. 2994, pages 52 - 59, XP000991326, ISSN: 0277-786X *
MATSUOKA T: "Phase separation in InGaAlN", MRS INTERNET JOURNAL OF NITRIDE RESEARCH, vol. 3, 1998, pages 1 - 5, XP002149866, ISSN: 1092-5783 *
PATENT ABSTRACTS OF JAPAN vol. 018, no. 480 (E - 1603) 8 September 1994 (1994-09-08) *
PATENT ABSTRACTS OF JAPAN vol. 2000, no. 02 29 February 2000 (2000-02-29) *
PINER E ET AL: "Growth and properties of InGaN and AlInGaN thin films on sapphire", MRS INTERNET JOURNAL OF NITRIDE RESEARCH, vol. 1, 1996, pages 1 - 6, XP002149863, ISSN: 1092-5783 *
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Publication number Publication date
JP2009049422A (en) 2009-03-05
JP4837012B2 (en) 2011-12-14
WO2001037383A2 (en) 2001-05-25
JP2003514402A (en) 2003-04-15

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