WO2001033677A3 - LONG WAVELENGTH PSEUDOMORPHIC InGaNPAsSb TYPE-I AND TYPE-II ACTIVE LAYERS FOR THE GAAS MATERIAL SYSTEM - Google Patents
LONG WAVELENGTH PSEUDOMORPHIC InGaNPAsSb TYPE-I AND TYPE-II ACTIVE LAYERS FOR THE GAAS MATERIAL SYSTEM Download PDFInfo
- Publication number
- WO2001033677A3 WO2001033677A3 PCT/US2000/041775 US0041775W WO0133677A3 WO 2001033677 A3 WO2001033677 A3 WO 2001033677A3 US 0041775 W US0041775 W US 0041775W WO 0133677 A3 WO0133677 A3 WO 0133677A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- light
- type
- active region
- strain
- devices
- Prior art date
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
- H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/3235—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers
- H01S5/32358—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers containing very small amounts, usually less than 1%, of an additional III or V compound to decrease the bandgap strongly in a non-linear way by the bowing effect
- H01S5/32366—(In)GaAs with small amount of N
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3422—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers comprising type-II quantum wells or superlattices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/3434—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer comprising at least both As and P as V-compounds
Abstract
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/129,061 US6859474B1 (en) | 1999-11-01 | 2000-11-01 | Long wavelength pseudomorphic InGaNPAsSb type-I and type-II active layers for the gaas material system |
KR1020027005594A KR20020059663A (en) | 1999-11-01 | 2000-11-01 | LONG WAVELENGTH PSEUDOMORPHIC InGaNPAsSb TYPE-I AND TYPE-II ACTIVE LAYERS FOR THE GAAS MATERIAL SYSTEM |
JP2001535268A JP2003513476A (en) | 1999-11-01 | 2000-11-01 | Long wavelength pseudomorphic InGaNPAsSb type I and type II active layers for GaAs material systems |
EP00991716A EP1228557A2 (en) | 1999-11-01 | 2000-11-01 | Long wavelength pseudomorphic inganpassb type-i and type-ii active layers for the gas material system |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US16281399P | 1999-11-01 | 1999-11-01 | |
US60/162,813 | 1999-11-01 |
Publications (3)
Publication Number | Publication Date |
---|---|
WO2001033677A2 WO2001033677A2 (en) | 2001-05-10 |
WO2001033677A3 true WO2001033677A3 (en) | 2001-10-25 |
WO2001033677A9 WO2001033677A9 (en) | 2002-08-15 |
Family
ID=22587237
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2000/041775 WO2001033677A2 (en) | 1999-11-01 | 2000-11-01 | LONG WAVELENGTH PSEUDOMORPHIC InGaNPAsSb TYPE-I AND TYPE-II ACTIVE LAYERS FOR THE GAAS MATERIAL SYSTEM |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP1228557A2 (en) |
JP (1) | JP2003513476A (en) |
KR (1) | KR20020059663A (en) |
CN (1) | CN1384990A (en) |
WO (1) | WO2001033677A2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6822995B2 (en) | 2002-02-21 | 2004-11-23 | Finisar Corporation | GaAs/AI(Ga)As distributed bragg reflector on InP |
US8168456B2 (en) | 2004-10-01 | 2012-05-01 | Finisar Corporation | Vertical cavity surface emitting laser with undoped top mirror |
US8451875B2 (en) | 2004-10-01 | 2013-05-28 | Finisar Corporation | Vertical cavity surface emitting laser having strain reduced quantum wells |
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US7058112B2 (en) * | 2001-12-27 | 2006-06-06 | Finisar Corporation | Indium free vertical cavity surface emitting laser |
US6922426B2 (en) * | 2001-12-20 | 2005-07-26 | Finisar Corporation | Vertical cavity surface emitting laser including indium in the active region |
JP3735047B2 (en) * | 2000-07-31 | 2006-01-11 | 古河電気工業株式会社 | Semiconductor laser device and manufacturing method thereof |
US6803604B2 (en) * | 2001-03-13 | 2004-10-12 | Ricoh Company, Ltd. | Semiconductor optical modulator, an optical amplifier and an integrated semiconductor light-emitting device |
US6888873B2 (en) | 2002-02-21 | 2005-05-03 | Finisar Corporation | Long wavelength VCSEL bottom mirror |
US6711195B2 (en) * | 2002-02-28 | 2004-03-23 | Agilent Technologies, Inc. | Long-wavelength photonic device with GaAsSb quantum-well layer |
US6927412B2 (en) | 2002-11-21 | 2005-08-09 | Ricoh Company, Ltd. | Semiconductor light emitter |
JP5196750B2 (en) * | 2006-08-25 | 2013-05-15 | キヤノン株式会社 | Oscillating element |
JP2010034506A (en) * | 2008-06-24 | 2010-02-12 | Ricoh Co Ltd | Surface emission type semiconductor laser, surface emission type laser array element, optical scanning device, and image forming device |
EP2131458B1 (en) * | 2008-06-03 | 2017-08-16 | Ricoh Company, Ltd. | Vertical cavity surface emitting laser (VCSEL), VCSEL array device, optical scanning apparatus, and image forming apparatus |
DE102008048491A1 (en) | 2008-09-23 | 2010-04-01 | Meiko Maschinenbau Gmbh & Co.Kg | Dishwasher with low-temperature rinsing |
DE102009056933A1 (en) * | 2009-12-04 | 2011-06-09 | Giesecke & Devrient Gmbh | Security element with color filter, value document with such a security element and production method of such a security element |
US9306115B1 (en) | 2015-02-10 | 2016-04-05 | Epistar Corporation | Light-emitting device |
KR102030080B1 (en) * | 2015-03-06 | 2019-10-08 | 에피스타 코포레이션 | Light-emitting device |
JP2020098890A (en) * | 2018-12-19 | 2020-06-25 | 住友電気工業株式会社 | Semiconductor laser |
KR102120356B1 (en) * | 2019-10-01 | 2020-06-09 | 에피스타 코포레이션 | Light-emitting device |
CN114552379B (en) * | 2020-11-25 | 2023-08-08 | 上海禾赛科技有限公司 | Resonant cavity, laser unit, laser and laser radar |
CN114430002B (en) * | 2022-04-06 | 2022-06-07 | 苏州长光华芯光电技术股份有限公司 | High-efficiency active layer, semiconductor light-emitting device and preparation method |
Citations (3)
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---|---|---|---|---|
EP0833395A2 (en) * | 1996-09-30 | 1998-04-01 | Canon Kabushiki Kaisha | Method of fabricating a device including compound semiconductor crystal and method of fabricating a compound semiconductor layer structure |
EP0896406A2 (en) * | 1997-08-08 | 1999-02-10 | Matsushita Electric Industrial Co., Ltd. | Semiconductor laser device, optical communication system using the same, and method for producing compound semiconductor |
US5960018A (en) * | 1996-09-25 | 1999-09-28 | Picolight Incorporated | Extended wavelength strained layer lasers having strain compensated layers |
-
2000
- 2000-11-01 JP JP2001535268A patent/JP2003513476A/en active Pending
- 2000-11-01 EP EP00991716A patent/EP1228557A2/en not_active Withdrawn
- 2000-11-01 CN CN00814968A patent/CN1384990A/en active Pending
- 2000-11-01 KR KR1020027005594A patent/KR20020059663A/en not_active Application Discontinuation
- 2000-11-01 WO PCT/US2000/041775 patent/WO2001033677A2/en not_active Application Discontinuation
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5960018A (en) * | 1996-09-25 | 1999-09-28 | Picolight Incorporated | Extended wavelength strained layer lasers having strain compensated layers |
EP0833395A2 (en) * | 1996-09-30 | 1998-04-01 | Canon Kabushiki Kaisha | Method of fabricating a device including compound semiconductor crystal and method of fabricating a compound semiconductor layer structure |
EP0896406A2 (en) * | 1997-08-08 | 1999-02-10 | Matsushita Electric Industrial Co., Ltd. | Semiconductor laser device, optical communication system using the same, and method for producing compound semiconductor |
Non-Patent Citations (4)
Title |
---|
GOKHALE M R ET AL: "HIGH-PERFORMANCE LONG-WAVELENGTH (LAMBDA 1.3 MUM) INGAASPN QUANTUM-WELL LASERS", IEEE PHOTONICS TECHNOLOGY LETTERS,IEEE INC. NEW YORK,US, vol. 11, no. 8, August 1999 (1999-08-01), pages 952 - 954, XP000860961, ISSN: 1041-1135 * |
HAINS C P ET AL: "ROOM-TEMPERATURE PULSED OPERATION OF TRIPLE-QUANTUM-WELL GAINNAS LASERS GROWN ON MISORIENTED GAAS SUBSTRATES BY MOCVD", IEEE PHOTONICS TECHNOLOGY LETTERS,IEEE INC. NEW YORK,US, vol. 11, no. 10, October 1999 (1999-10-01), pages 1208 - 1210, XP000880896, ISSN: 1041-1135 * |
JOHNSON S R ET AL: "Long wavelength pseudomorphic InGaPAsSb type-I and type-II active layers grown on GaAs", 18TH NORTH AMERICAN CONFERENCE ON MOLECULAR BEAM EPITAXY, BANFF, ALTA., CANADA, 10-13 OCT. 1999, vol. 18, no. 3, Journal of Vacuum Science & Technology B (Microelectronics and Nanometer Structures), May 2000, AIP for American Vacuum Soc, USA, pages 1545 - 1548, XP002172052, ISSN: 0734-211X * |
MIYAMOTO T ET AL: "A NOVEL GALNNAS-GAAS QUANTUM-WELL STRUCTURE FOR LONG-WAVELENGTH SEMICONDUCTOR LASERS", IEEE PHOTONICS TECHNOLOGY LETTERS,US,IEEE INC. NEW YORK, vol. 9, no. 11, 1 November 1997 (1997-11-01), pages 1448 - 1450, XP000722969, ISSN: 1041-1135 * |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6822995B2 (en) | 2002-02-21 | 2004-11-23 | Finisar Corporation | GaAs/AI(Ga)As distributed bragg reflector on InP |
US8168456B2 (en) | 2004-10-01 | 2012-05-01 | Finisar Corporation | Vertical cavity surface emitting laser with undoped top mirror |
US8451875B2 (en) | 2004-10-01 | 2013-05-28 | Finisar Corporation | Vertical cavity surface emitting laser having strain reduced quantum wells |
Also Published As
Publication number | Publication date |
---|---|
WO2001033677A2 (en) | 2001-05-10 |
EP1228557A2 (en) | 2002-08-07 |
WO2001033677A9 (en) | 2002-08-15 |
KR20020059663A (en) | 2002-07-13 |
CN1384990A (en) | 2002-12-11 |
JP2003513476A (en) | 2003-04-08 |
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