WO2001033677A2 - LONG WAVELENGTH PSEUDOMORPHIC InGaNPAsSb TYPE-I AND TYPE-II ACTIVE LAYERS FOR THE GAAS MATERIAL SYSTEM - Google Patents
LONG WAVELENGTH PSEUDOMORPHIC InGaNPAsSb TYPE-I AND TYPE-II ACTIVE LAYERS FOR THE GAAS MATERIAL SYSTEM Download PDFInfo
- Publication number
- WO2001033677A2 WO2001033677A2 PCT/US2000/041775 US0041775W WO0133677A2 WO 2001033677 A2 WO2001033677 A2 WO 2001033677A2 US 0041775 W US0041775 W US 0041775W WO 0133677 A2 WO0133677 A2 WO 0133677A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layers
- layer
- band
- type
- active region
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
- H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/3235—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers
- H01S5/32358—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers containing very small amounts, usually less than 1%, of an additional III or V compound to decrease the bandgap strongly in a non-linear way by the bowing effect
- H01S5/32366—(In)GaAs with small amount of N
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3422—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers comprising type-II quantum wells or superlattices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/3434—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer comprising at least both As and P as V-compounds
Definitions
- VSELs Vertical-cavity surface-emitting lasers
- devices may enable digital communications applications such as "fiber to the home,” which
- GaAs GaAs.
- InP has been the traditional substrate material for edge-emitting lasers
- GaAs GaAs
- VCSELs are light emitting semiconductor devices including two
- DBRs Distributed Bragg Reflectors
- a typical VCSEL structure is shown schematically in
- the active region consists of several InGaAs quantum wells separated by
- GaAs barriers and illustrates the general conduction band-edge alignment required in an active
- the semiconductor structure is designed to have the minimum separation between the
- the wavelength of the emitted light is determined by the energy separation between electrons
- the particular active region shown is designed for emission at
- Al-Ga ⁇ As spacer is used to define the cavity length, which matches a multiple of half the
- the mirrors consist of alternate ⁇ /4 layers
- the partial waves At the lasing wavelength, the partial waves
- DBRs distributed Bragg reflectors
- a waveguiding structure for the optical mode is required, for instance in the
- optical mode is confined by etching away the material around a pillar-shaped volume to form an
- Very high resistivity regions may be created by firing high energy protons or ions
- the gain region is confined laterally, and the mode forms in the free area.
- VCSELs require laser-quality active materials and high reflectivity DBR mirrors.
- the production of VCSELs emitting in the region of 1.3 to 1.55 ⁇ m may
- the materials used for lattice-matched mirrors on InP substrates are InP and
- GaAs stacks grown on InP require more InP/InGaAsP layers to produce the same reflectivity.
- InGaAsP displays a higher thermal resistance than GaAs or AlAs. This increases
- thermal problems of the device e.g., heating of the active zone--, making it more difficult to
- GaAs may offer significant advantages in terms of lower substrate cost
- wavelength emission using such methods because process parameters such as critical thickness
- Layers can show surface roughness or corrugation
- the volume of the active region becomes significantly smaller. This will reduce the maximum achievable gain provided by the
- strain accumulation may result in surface
- Structural non-uniformities such as
- corrugation will cause spectral broadening and reduced gain.
- DBRs are grown with separate InP substrates and then bonded together to form the VCSEL.
- QD quantum dot
- GaAsSb quantum wells (QWs) and lasing has been reported in an edge-emitting device at 1.27
- GaAs-based VCSEL structure using a single GalnNAs QW, and RT pulsed operation GaAs-based VCSEL structure using a single GalnNAs QW, and RT pulsed operation.
- the invention provides for
- the alloy is tailored so that each of these constituents contributes both to the
- the present invention may have utility for both or either of emission and absorption of light, or for light modulation, and may further be by virtue of their physical and optical party adapted
- the alloy to a wavelength at which it can efficiently process, i.e. absorb and/or emit, light.
- composition for the quantum well layers is optimized so that the longest possible wavelength is
- N nitrogen
- Phosphorus (P) also has this property, while
- valence and conduction bands differ from one layer to another.
- valence band edge ⁇ holes have an inverted energy scale — is sandwiched between layers where the conduction band edge is higher and the valence band edge is lower.
- a device having such a structure may have
- light-processing utility either as a light emitter or a light receptor/detector, or a light modulator
- quantum wells can be stacked in periodic order, as shown in Figure 5.
- quantum wells are closely coupled, such an arrangement is called a superlattice and has its own
- Such a type-II quantum well has spatially separated regions to trap the electrons and the holes
- the two electron (hole) wells is relatively low.
- the electron (hole) wavefunction has
- the quantum well layers of the structures demonstrated here have a
- both sides of the quantum well layers may be made of a material with a smaller lattice constant
- Figure 1 sets forth a schematic design of a generic VCSEL structure with the
- Figure 2 illustrates a typical VCSEL structure showing (a) index guided device
- Figure 3 shows the structure of a generic detector using the same active region
- Figure 4 depicts a type-I quantum well.
- Figure 5 shows a type-I multi quantum well.
- Figure 6 shows a type-II quantum well.
- Figure 7 shows a type-II symmetric quantum well.
- Figure 8 illustrates the principle of strain compensation.
- Figure 9 shows band-edge alignment diagram of a type-I strain compensated QW
- Figure 10 compares point bandgap energy versus strain for coherently strained
- region is direct bandgap material while the left-hand shaded region is indirect bandgap material.
- Figure 11 illustrates an A/B/C/B/A type-I single quantum well utilizing material
- Figure 12 illustrates A/B/C/B/A type-I multi quantum wells utilizing material
- Figure 13 illustrates an A/B/C/D/B/A type-II single quantum well utilizing
- Figure 14 illustrates A/B/C/D/B/A type-II multi quantum wells utilizing material
- Figure 15 illustrates an A/B/D/C/B/A type-II single quantum well utilizing
- Figure 16 illustrates A/B/D/C/B/A type-II multi quantum wells utilizing material
- Figure 17 illustrates an A/B/D/C/D/B/A type-II single quantum well utilizing
- Figure 18 illustrates A/B/D/C/D/B/A type-II multi quantum wells utilizing
- Figure 19 illustrates an A/B/C/D/C/B/A type-II single quantum well utilizing
- Figure 20 illustrates A B/C/D/C/B/A type-II multi quantum wells utilizing
- the present invention's material system comprises: 1) Compressively strained
- type-I and type-II band-edge alignments are utilized in the present invention.
- Light emission or abso ⁇ tion at wavelengths 1.0 ⁇ m to 1.6 ⁇ m are achieved by the
- strain compensation material B with strain compensation material B, with type-I active material C, or with type-II active
- A Al p Ga,. p As, 0 ⁇ p ⁇ 1
- the quantum wells ⁇ layers C and D — are compressively strained, while tensile
- strain in the spacer barrier — layer B is used to compensate fully or partially the overall strain in
- the degree of strain compensation affects the total thickness and the number
- each layer will lie essentially parallel to the other layers as a result of the
- Figure 9 shows the conduction band and valence band edge alignments for a particular material system made in accordance with the present invention.
- the strain of the barrier layer is +1.5% (tensile), while for the well layer it is -
- MBE molecular beam epitaxy
- composition of the Q W can also be
- the active material has a direct band-to-band energy transition corresponding to a
- pseudomo ⁇ hic GaPSb on GaAs is an indirect bandgap material for compressive strain levels
- GaPSb As an example, the bandgap energy versus strain for GaPAsSb is shown in
- Figure 10 the ternaries GaPAs, GaPSb, and GaAsSb ternaries border the GaPAsSb
- compositions are suitable as active materials for lasers.
- region labeled For the region labeled
- indirect bandgap the lowest energy band to band transition is an indirect transition that occurs
- the X, L, and F band structure notations refer to separate electron or crystal
- transition refers to a change in both momentum and energy during the transition.
- bandgap materials are not suitable as active materials for lasers because the optical band-to-band
- GaP has a large bandgap (> 2 eV) and an indirect bandgap, it is not
- GaAs-based lasers include, but are not limited to:
- GaP GaP or GaSb
- GaPAsSb is a direct bandgap material.
- N seems to inco ⁇ orate as a localized state
- system 1 One embodiment of the present invention, denoted herein as system 1 , consists of
- an active layer of layer sequence that may be A-B-C-B-A on a substrate close in composition to
- GaAs i.e., comprising GaAs and/or its structural and functional equivlaent in substantial
- A Al p Ga,. p As, 0 ⁇ p ⁇ l;
- sequence designation A-B-C-B-A (as just described, for example) characterizes sequentially-
- each layer being adjacent to the next-denoted layer (again following the just- described example, a layer of composition A adjacent to a layer of composition B, itself adjacent
- composition B which is finally adjacent on its opposite side to a layer of composition A).
- strain compensation may also be zero.
- the C-B unit of the active layer may be
- the strain compensation may also be substantially zero.
- system 2 One embodiment of the invention, denoted herein as system 2, consists of an
- A Al p Ga 1 _ p As,0 ⁇ p ⁇ l;
- B Al q Ga ⁇ N-P-As,.,.-, 0 ⁇ q ⁇ 1; 0 ⁇ r ⁇ 0.1; 0 ⁇ s ⁇ 1;
- D In a Ga,. a N b As,. b , 0 ⁇ a ⁇ l;0 ⁇ b ⁇ 0.1.
- the strain compensation may also be substantially zero.
- the C-D-B unit of the active layer may be
- the strain compensation may also be zero.
- system 3 One embodiment of the invention, denoted herein as system 3, consists of an
- D In a Ga,. a N b As,_ b , 0 ⁇ a ⁇ l;0 ⁇ b ⁇ 0.1.
- the strain compensation may also be zero.
- the D-C-B unit of the active layer may be any D-C-B unit of the active layer.
- the strain compensation may also be substantially zero.
- system 4 One embodiment of the invention, denoted herein as system 4, consists of an
- A Al p Ga,. p As,0 ⁇ p ⁇ l;
- the strain compensation may also be substantially zero.
- the strain compensation may also be substantially zero.
- One embodiment of the present invention denoted system 5, consists of an active
- the strain compensation may also be substantially zero.
- the strain compensation may also be substantially zero.
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/129,061 US6859474B1 (en) | 1999-11-01 | 2000-11-01 | Long wavelength pseudomorphic InGaNPAsSb type-I and type-II active layers for the gaas material system |
KR1020027005594A KR20020059663A (en) | 1999-11-01 | 2000-11-01 | LONG WAVELENGTH PSEUDOMORPHIC InGaNPAsSb TYPE-I AND TYPE-II ACTIVE LAYERS FOR THE GAAS MATERIAL SYSTEM |
JP2001535268A JP2003513476A (en) | 1999-11-01 | 2000-11-01 | Long wavelength pseudomorphic InGaNPAsSb type I and type II active layers for GaAs material systems |
EP00991716A EP1228557A2 (en) | 1999-11-01 | 2000-11-01 | Long wavelength pseudomorphic inganpassb type-i and type-ii active layers for the gas material system |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US16281399P | 1999-11-01 | 1999-11-01 | |
US60/162,813 | 1999-11-01 |
Publications (3)
Publication Number | Publication Date |
---|---|
WO2001033677A2 true WO2001033677A2 (en) | 2001-05-10 |
WO2001033677A3 WO2001033677A3 (en) | 2001-10-25 |
WO2001033677A9 WO2001033677A9 (en) | 2002-08-15 |
Family
ID=22587237
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2000/041775 WO2001033677A2 (en) | 1999-11-01 | 2000-11-01 | LONG WAVELENGTH PSEUDOMORPHIC InGaNPAsSb TYPE-I AND TYPE-II ACTIVE LAYERS FOR THE GAAS MATERIAL SYSTEM |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP1228557A2 (en) |
JP (1) | JP2003513476A (en) |
KR (1) | KR20020059663A (en) |
CN (1) | CN1384990A (en) |
WO (1) | WO2001033677A2 (en) |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1182756A2 (en) * | 2000-07-31 | 2002-02-27 | The Furukawa Electric Co., Ltd. | Semiconductor laser device having lower threshold current |
WO2003055022A1 (en) * | 2001-12-20 | 2003-07-03 | Honeywell International Inc | Vertical cavity surface emitting laser including indium in the active region |
WO2003058779A1 (en) * | 2001-12-27 | 2003-07-17 | Honeywell Internation Inc. | Indium free vertical cavity surface emitting laser |
EP1341279A2 (en) * | 2002-02-28 | 2003-09-03 | Agilent Technologies, Inc. | Long-wavelength photonic device with GaAsSb Quantum-well layer |
US6822995B2 (en) | 2002-02-21 | 2004-11-23 | Finisar Corporation | GaAs/AI(Ga)As distributed bragg reflector on InP |
US6888873B2 (en) | 2002-02-21 | 2005-05-03 | Finisar Corporation | Long wavelength VCSEL bottom mirror |
US7714338B2 (en) | 2002-11-21 | 2010-05-11 | Ricoh Company, Ltd. | Semiconductor light emitter |
EP2131458A3 (en) * | 2008-06-03 | 2011-02-09 | Ricoh Company, Ltd. | Vertical cavity surface emitting laser (vcsel), vcsel array device, optical scanning apparatus, and image forming apparatus |
US8168456B2 (en) | 2004-10-01 | 2012-05-01 | Finisar Corporation | Vertical cavity surface emitting laser with undoped top mirror |
US8279519B2 (en) * | 2001-03-13 | 2012-10-02 | Ricoh Company, Ltd. | Semiconductor optical modulator, an optical amplifier and an integrated semiconductor light-emitting device |
US8451875B2 (en) | 2004-10-01 | 2013-05-28 | Finisar Corporation | Vertical cavity surface emitting laser having strain reduced quantum wells |
US9538897B2 (en) | 2008-09-23 | 2017-01-10 | Meiko Maschinenbau Gmbh & Co. Kg | Dishwasher with low-temperature final washing |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5196750B2 (en) * | 2006-08-25 | 2013-05-15 | キヤノン株式会社 | Oscillating element |
JP2010034506A (en) * | 2008-06-24 | 2010-02-12 | Ricoh Co Ltd | Surface emission type semiconductor laser, surface emission type laser array element, optical scanning device, and image forming device |
DE102009056933A1 (en) * | 2009-12-04 | 2011-06-09 | Giesecke & Devrient Gmbh | Security element with color filter, value document with such a security element and production method of such a security element |
US9306115B1 (en) | 2015-02-10 | 2016-04-05 | Epistar Corporation | Light-emitting device |
KR102030080B1 (en) * | 2015-03-06 | 2019-10-08 | 에피스타 코포레이션 | Light-emitting device |
JP2020098890A (en) * | 2018-12-19 | 2020-06-25 | 住友電気工業株式会社 | Semiconductor laser |
KR102120356B1 (en) * | 2019-10-01 | 2020-06-09 | 에피스타 코포레이션 | Light-emitting device |
CN114552379B (en) * | 2020-11-25 | 2023-08-08 | 上海禾赛科技有限公司 | Resonant cavity, laser unit, laser and laser radar |
CN114430002B (en) * | 2022-04-06 | 2022-06-07 | 苏州长光华芯光电技术股份有限公司 | High-efficiency active layer, semiconductor light-emitting device and preparation method |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0833395A2 (en) * | 1996-09-30 | 1998-04-01 | Canon Kabushiki Kaisha | Method of fabricating a device including compound semiconductor crystal and method of fabricating a compound semiconductor layer structure |
EP0896406A2 (en) * | 1997-08-08 | 1999-02-10 | Matsushita Electric Industrial Co., Ltd. | Semiconductor laser device, optical communication system using the same, and method for producing compound semiconductor |
US5960018A (en) * | 1996-09-25 | 1999-09-28 | Picolight Incorporated | Extended wavelength strained layer lasers having strain compensated layers |
-
2000
- 2000-11-01 JP JP2001535268A patent/JP2003513476A/en active Pending
- 2000-11-01 EP EP00991716A patent/EP1228557A2/en not_active Withdrawn
- 2000-11-01 CN CN00814968A patent/CN1384990A/en active Pending
- 2000-11-01 KR KR1020027005594A patent/KR20020059663A/en not_active Application Discontinuation
- 2000-11-01 WO PCT/US2000/041775 patent/WO2001033677A2/en not_active Application Discontinuation
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5960018A (en) * | 1996-09-25 | 1999-09-28 | Picolight Incorporated | Extended wavelength strained layer lasers having strain compensated layers |
EP0833395A2 (en) * | 1996-09-30 | 1998-04-01 | Canon Kabushiki Kaisha | Method of fabricating a device including compound semiconductor crystal and method of fabricating a compound semiconductor layer structure |
EP0896406A2 (en) * | 1997-08-08 | 1999-02-10 | Matsushita Electric Industrial Co., Ltd. | Semiconductor laser device, optical communication system using the same, and method for producing compound semiconductor |
Non-Patent Citations (4)
Title |
---|
GOKHALE M R ET AL: "HIGH-PERFORMANCE LONG-WAVELENGTH (LAMBDA 1.3 MUM) INGAASPN QUANTUM-WELL LASERS" IEEE PHOTONICS TECHNOLOGY LETTERS,IEEE INC. NEW YORK,US, vol. 11, no. 8, August 1999 (1999-08), pages 952-954, XP000860961 ISSN: 1041-1135 * |
HAINS C P ET AL: "ROOM-TEMPERATURE PULSED OPERATION OF TRIPLE-QUANTUM-WELL GAINNAS LASERS GROWN ON MISORIENTED GAAS SUBSTRATES BY MOCVD" IEEE PHOTONICS TECHNOLOGY LETTERS,IEEE INC. NEW YORK,US, vol. 11, no. 10, October 1999 (1999-10), pages 1208-1210, XP000880896 ISSN: 1041-1135 * |
JOHNSON S R ET AL: "Long wavelength pseudomorphic InGaPAsSb type-I and type-II active layers grown on GaAs" 18TH NORTH AMERICAN CONFERENCE ON MOLECULAR BEAM EPITAXY, BANFF, ALTA., CANADA, 10-13 OCT. 1999, vol. 18, no. 3, pages 1545-1548, XP002172052 Journal of Vacuum Science & Technology B (Microelectronics and Nanometer Structures), May 2000, AIP for American Vacuum Soc, USA ISSN: 0734-211X * |
MIYAMOTO T ET AL: "A NOVEL GALNNAS-GAAS QUANTUM-WELL STRUCTURE FOR LONG-WAVELENGTH SEMICONDUCTOR LASERS" IEEE PHOTONICS TECHNOLOGY LETTERS,US,IEEE INC. NEW YORK, vol. 9, no. 11, 1 November 1997 (1997-11-01), pages 1448-1450, XP000722969 ISSN: 1041-1135 * |
Cited By (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1182756A3 (en) * | 2000-07-31 | 2003-07-16 | The Furukawa Electric Co., Ltd. | Semiconductor laser device having lower threshold current |
EP1182756A2 (en) * | 2000-07-31 | 2002-02-27 | The Furukawa Electric Co., Ltd. | Semiconductor laser device having lower threshold current |
US6912236B2 (en) | 2000-07-31 | 2005-06-28 | The Furukawa Electric Co., Ltd. | Semiconductor laser device having lower threshold current |
US8279519B2 (en) * | 2001-03-13 | 2012-10-02 | Ricoh Company, Ltd. | Semiconductor optical modulator, an optical amplifier and an integrated semiconductor light-emitting device |
WO2003055022A1 (en) * | 2001-12-20 | 2003-07-03 | Honeywell International Inc | Vertical cavity surface emitting laser including indium in the active region |
WO2003058779A1 (en) * | 2001-12-27 | 2003-07-17 | Honeywell Internation Inc. | Indium free vertical cavity surface emitting laser |
US6888873B2 (en) | 2002-02-21 | 2005-05-03 | Finisar Corporation | Long wavelength VCSEL bottom mirror |
US6822995B2 (en) | 2002-02-21 | 2004-11-23 | Finisar Corporation | GaAs/AI(Ga)As distributed bragg reflector on InP |
EP1341279A2 (en) * | 2002-02-28 | 2003-09-03 | Agilent Technologies, Inc. | Long-wavelength photonic device with GaAsSb Quantum-well layer |
EP1341279A3 (en) * | 2002-02-28 | 2004-12-15 | Agilent Technologies, Inc. | Long-wavelength photonic device with GaAsSb Quantum-well layer |
JP2003258384A (en) * | 2002-02-28 | 2003-09-12 | Agilent Technol Inc | LONG-WAVELENGTH PHOTONICS DEVICE INCLUDING GaAsSb QUANTUM WELL LAYER |
US7714338B2 (en) | 2002-11-21 | 2010-05-11 | Ricoh Company, Ltd. | Semiconductor light emitter |
US7872270B2 (en) | 2002-11-21 | 2011-01-18 | Ricoh Company, Ltd. | Semiconductor light emitter |
US8168456B2 (en) | 2004-10-01 | 2012-05-01 | Finisar Corporation | Vertical cavity surface emitting laser with undoped top mirror |
US8451875B2 (en) | 2004-10-01 | 2013-05-28 | Finisar Corporation | Vertical cavity surface emitting laser having strain reduced quantum wells |
EP2131458A3 (en) * | 2008-06-03 | 2011-02-09 | Ricoh Company, Ltd. | Vertical cavity surface emitting laser (vcsel), vcsel array device, optical scanning apparatus, and image forming apparatus |
US7991033B2 (en) | 2008-06-03 | 2011-08-02 | Ricoh Company, Ltd. | Vertical cavity surface emitting laser (VCSEL), VCSEL array device, optical scanning apparatus, and image forming apparatus |
US9538897B2 (en) | 2008-09-23 | 2017-01-10 | Meiko Maschinenbau Gmbh & Co. Kg | Dishwasher with low-temperature final washing |
Also Published As
Publication number | Publication date |
---|---|
WO2001033677A3 (en) | 2001-10-25 |
EP1228557A2 (en) | 2002-08-07 |
WO2001033677A9 (en) | 2002-08-15 |
KR20020059663A (en) | 2002-07-13 |
CN1384990A (en) | 2002-12-11 |
JP2003513476A (en) | 2003-04-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6566688B1 (en) | Compound semiconductor structures for optoelectronic devices | |
WO2001033677A2 (en) | LONG WAVELENGTH PSEUDOMORPHIC InGaNPAsSb TYPE-I AND TYPE-II ACTIVE LAYERS FOR THE GAAS MATERIAL SYSTEM | |
US5960018A (en) | Extended wavelength strained layer lasers having strain compensated layers | |
US6782021B2 (en) | Quantum dot vertical cavity surface emitting laser | |
US5719894A (en) | Extended wavelength strained layer lasers having nitrogen disposed therein | |
US5719895A (en) | Extended wavelength strained layer lasers having short period superlattices | |
EP1182756B1 (en) | Semiconductor laser device having lower threshold current | |
US10020423B2 (en) | Light emitting semiconductor device | |
US5712865A (en) | Temperature-insensitive vertical-cavity surface-emitting lasers and method for fabrication thereof | |
EP1341279B1 (en) | Long-wavelength photonic device with InGaAsSb Quantum-well layer | |
EP1401069A2 (en) | Material systems for semiconductor tunnel-junction structures in light emitting devices | |
EP1246328A2 (en) | Intracavity contacted long wavelength VCSELs with buried antimony layers | |
US7095770B2 (en) | Vertical cavity surface emitting laser including indium, antimony and nitrogen in the active region | |
EP1294063A1 (en) | Indium-phoshpide-based vertical-cavity surface-emitting laser | |
WO2001029943A1 (en) | Method and apparatus for long wavelength semiconductor lasers | |
US6859474B1 (en) | Long wavelength pseudomorphic InGaNPAsSb type-I and type-II active layers for the gaas material system | |
US6728283B2 (en) | Semiconductor laser and photo module using the same | |
US20030123501A1 (en) | Vertical cavity surface emitting laser including indium and antimony in the active region | |
US7058112B2 (en) | Indium free vertical cavity surface emitting laser | |
JP5381692B2 (en) | Semiconductor light emitting device | |
US20030118069A1 (en) | Vertical cavity surface emitting laser including indium in the active region | |
WO1998013879A1 (en) | Extended wavelength strained layer lasers | |
Tränkle et al. | Visible (Red) Vertical-Cavity Surface-Emitting Lasers | |
Fiore et al. | Postgrowth tuning of cavity resonance for multiple-wavelength laser and detector arrays |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A2 Designated state(s): CN JP KR US |
|
AL | Designated countries for regional patents |
Kind code of ref document: A2 Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
DFPE | Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101) | ||
AK | Designated states |
Kind code of ref document: A3 Designated state(s): CN JP KR US |
|
AL | Designated countries for regional patents |
Kind code of ref document: A3 Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR |
|
WWE | Wipo information: entry into national phase |
Ref document number: 008149682 Country of ref document: CN |
|
WWE | Wipo information: entry into national phase |
Ref document number: 10129061 Country of ref document: US |
|
ENP | Entry into the national phase |
Ref country code: JP Ref document number: 2001 535268 Kind code of ref document: A Format of ref document f/p: F |
|
WWE | Wipo information: entry into national phase |
Ref document number: 1020027005594 Country of ref document: KR |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2000991716 Country of ref document: EP |
|
WWP | Wipo information: published in national office |
Ref document number: 1020027005594 Country of ref document: KR |
|
WWP | Wipo information: published in national office |
Ref document number: 2000991716 Country of ref document: EP |
|
COP | Corrected version of pamphlet |
Free format text: PAGE 1, DESCRIPTION, REPLACED BY A NEW PAGE 1; DUE TO LATE TRANSMITTAL BY THE RECEIVING OFFICE |
|
WWW | Wipo information: withdrawn in national office |
Ref document number: 2000991716 Country of ref document: EP |