WO2001029549A2 - Method for producing electric conductive structures in the nanometric range and their use as an impedimetric sensor - Google Patents
Method for producing electric conductive structures in the nanometric range and their use as an impedimetric sensor Download PDFInfo
- Publication number
- WO2001029549A2 WO2001029549A2 PCT/EP2000/009784 EP0009784W WO0129549A2 WO 2001029549 A2 WO2001029549 A2 WO 2001029549A2 EP 0009784 W EP0009784 W EP 0009784W WO 0129549 A2 WO0129549 A2 WO 0129549A2
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- WO
- WIPO (PCT)
- Prior art keywords
- electrodes
- substrate
- edges
- electrical conductor
- electrically conductive
- Prior art date
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
- G01N27/28—Electrolytic cell components
- G01N27/30—Electrodes, e.g. test electrodes; Half-cells
- G01N27/327—Biochemical electrodes, e.g. electrical or mechanical details for in vitro measurements
- G01N27/3275—Sensing specific biomolecules, e.g. nucleic acid strands, based on an electrode surface reaction
- G01N27/3278—Sensing specific biomolecules, e.g. nucleic acid strands, based on an electrode surface reaction involving nanosized elements, e.g. nanogaps or nanoparticles
Definitions
- the invention relates to a method for producing electrical conductor structures in the nanometer range, i.e. electrically conductive wires, the diameter of which typically range from 1 nm to 500 nm.
- electrodes applied to a carrier substrate and configured in an interdigital electrode arrangement are suitable for this purpose.
- the selectively acting detector substances for example oligonucleotides or antigens, are applied between the electrodes and bound to the substrate.
- they form an interaction layer in the form of a dielectric, the dielectric change of which represents the measured variable of the biochemical sensor to be detected.
- binding reactions with the corresponding antigens occur, as a result of which the dielectric behavior of the interaction layer between the electrodes changes.
- the electrical field lines of the electrical field between the electrodes should run largely within the interaction layer.
- the ratio of the electrode spacing to the layer thickness of the dielectric is close to or less than 1.
- the layer thickness of the Interaction layer usually designed as a monolayer is only a few 10 nm - this corresponds approximately to the length of the oligonucleotides or antigens oriented perpendicular to the substrate surface.
- the electrode spacing should be of the same or even a smaller dimension in order to achieve the desired sensitivity of the biochemical sensor.
- the invention is based on the object of taking measures which serve to increase the sensitivity of impedimetrically operating biochemical sensors.
- it is important to significantly reduce the manufacturing outlay and the associated costs in the production of such sensors.
- the detection sensitivity of such sensors should be increased if the interaction layer between the electrodes is as large as possible.
- the idea on which the invention is based is the sharp concentration of the electric field between two electrodes, within which the interaction layer required for the detection of biochemical substances, in which, for example, oligonucleotides or antigens are introduced, is provided.
- these are miniaturized line wire sections with a typical line cross section of 1 to 500 nm and line lengths greater than 100 nm, which are preferably perpendicular to the electrical field lines running between the electrodes are arranged.
- This measure makes it possible to apply the electric field to the To concentrate the electrode gap and in particular on the surface of the nanowires, although the electrode spacing can be several micrometers, so that the electrode arrangement can be produced using customary, not cost-intensive methods.
- a method for producing related electrical conductor structures in the nanometer range is designed such that using a dielectric surface substrate having a surface topography, the surface topography of which has a large number of edge runs which run largely parallel to one another and which rise above the surface of the surface substrate, the surface substrate is electrically oblique shading acting on the conductive material is carried out in such a way that the electrically conductive material preferably settles on the edges.
- Uniaxially oriented semicrystalline polymer thin films which are themselves embedded in an amorphous matrix can be used as particularly suitable surface substrate materials, the crystalline regions on the surface being raised above the amorphous regions and forming edges.
- the edge pulls serve as the preferred location for metal material deposition, which occurs on the edge pulls as part of oblique shading.
- the oblique shading itself represents a deposition process, preferably an anisotropic vapor deposition process, in which the electrically conductive material to be deposited is directed obliquely to the surface of the surface substrate in its vapor phase, whereby it preferably settles on the raised edges.
- a main aspect of the invention is the saving in carrying out biochemical examinations by the possibility of producing an inexpensive biochemical sensor in which an expensive nanostructuring of the electrode arrangement can be dispensed with.
- Fig. 2 representation of a surface topology of a semi-crystalline
- FIG. 3 schematic diagram to explain the oblique shading. Description of an embodiment
- FIG. 1 a shows the top view of an impedance-acting biochemical sensor, which is essentially characterized in that two electrodes 1, 2 are arranged at a distance of a few ⁇ m, preferably on a carrier substrate 3 (see FIG. 1 b). Between the electrodes 1, 2 there is a conductor structure 4 consisting of a plurality of nanowires arranged parallel to one another, the arrangement of which can be seen in a detailed illustration in FIG. 1b.
- the left electrode 1 is shown in FIG. 1 b and applied directly to the carrier substrate 3.
- the nanowires 4 shown in cross section are each provided with an equidistant mutual distance.
- the longitudinal extension of the nanowires 4 is oriented perpendicular to the electrical field lines 5, the electrical field lines concentrating on the surface of the nanowires (see arrow representations).
- the cross section of the nanowires typically has sizes between 5 and 20 nm, their mutual distance is approximately the same order of magnitude, preferably between 5 and 30 nm.
- the surface of the carrier substrate 3 and the surface of the nanowires are with biochemical sensors 6 in the form of antigens or applied to oligonucleotides. The corresponding binding events take place on the antigens or oligonucleotides 6, on which, for example, certain DNA fragments hybridize.
- the electric field 5 that is formed between the electrodes 1, 2 is concentrated on the area of the interaction layer 7, which is expressed by the strongly curved field lines 5 within the interaction layer 7.
- the electric field 5 is concentrated in the immediate vicinity of the sensor surface, which at the same time also results in a significant increase in sensitivity in the detection of molecular binding events within the interaction layer 7.
- the natural surface topology of uniaxially oriented semicrystalline polymers is advantageously used (see here FIG. 2).
- Such polymer thin films consist of nanocrystals, which are embedded in an amorphous matrix.
- the dimensions of such crystals parallel to the molecular chain direction typically range from 5 to 25 nm. In parallel, the crystals can be up to a few micrometers in size.
- the crystals are raised compared to the amorphous regions, the transition between the crystalline and the amorphous region being characterized by a more or less sharp-edged transition, see FIG. 2, in which a melt-spun polymer thin film is shown.
- the protrusion of the polymer crystals from the amorphous regions is understandable by the diffusion of individual macromolecules during crystallization from the amorphous phase in the direction of the denser packed crystal that forms.
- uniaxially oriented polymer films as shown in FIG.
- the desired nanowires can be produced by metallizing the surface topology in the course of oblique shading.
- FIG. 3 shows a schematic cross section through a polymer thin film 8, in the surface of which crystalline 9 and amorphous regions 10 are provided.
- the transition between a crystalline region 9 and an amorphous region 10 is characterized by a sharp edge line 11.
- a sharp edge line 11 By obliquely shading this nanoscopically ordered surface topology with the aid of evaporation at a certain angle of incidence to the substrate surface (see the arrows drawn obliquely to the substrate surface), only the crystal flanks of the edge strips 11 facing the evaporator source and the crystal surfaces are metallized.
- the vapor-deposited metal 12 decorates the crystals and forms elongated, wire-like metal geometries that extend longitudinally to the edges.
- electrode structures are applied in such a way that the electrode edges are aligned perpendicular to the molecular chain direction and thus parallel to the nanowires produced.
- a sensor structure has sharp spacing and size distributions with regard to the conductor structures provided between electrodes, which can be set by the physical history of the crystal. It is thus possible to set the surface topology as desired by specifically varying the crystallization temperature and the process temperature for producing the melt-spun polymer thin film.
- the topology of the polymer thin films can be transferred by means of reactive ion etching into, for example, silicon or silicon oxide or ceramic substrates, on the surface of which nanowires can be applied by subsequent oblique shading.
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- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Molecular Biology (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Nanotechnology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- Electrochemistry (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
Abstract
Description
Claims
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP00975855A EP1222453A2 (en) | 1999-10-19 | 2000-10-06 | Method for producing electric conductive structures in the nanometric range and their use as an impedimetric sensor |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19950378.8 | 1999-10-19 | ||
DE1999150378 DE19950378B4 (en) | 1999-10-19 | 1999-10-19 | Method for producing an impedimetric sensor |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2001029549A2 true WO2001029549A2 (en) | 2001-04-26 |
WO2001029549A3 WO2001029549A3 (en) | 2002-01-24 |
Family
ID=7926182
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2000/009784 WO2001029549A2 (en) | 1999-10-19 | 2000-10-06 | Method for producing electric conductive structures in the nanometric range and their use as an impedimetric sensor |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP1222453A2 (en) |
DE (1) | DE19950378B4 (en) |
WO (1) | WO2001029549A2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1319943A3 (en) * | 2001-12-14 | 2006-06-07 | Stiftung Caesar Center of Advanced European Studies and Research | Impedance sensor for analytes in liquid solution |
US7351346B2 (en) | 2004-11-30 | 2008-04-01 | Agoura Technologies, Inc. | Non-photolithographic method for forming a wire grid polarizer for optical and infrared wavelengths |
US7561332B2 (en) | 2004-11-30 | 2009-07-14 | Agoura Technologies, Inc. | Applications and fabrication techniques for large scale wire grid polarizers |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1772732A1 (en) | 2005-10-07 | 2007-04-11 | Innogenetics N.V. | Polymer replicated interdigitated electrode arrays for (bio)sensing applications |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4387165A (en) * | 1982-04-22 | 1983-06-07 | Youngblood James L | H2 S Detector having semiconductor and noncontinuous inert film deposited thereon |
US4674320A (en) * | 1985-09-30 | 1987-06-23 | The United States Of America As Represented By The United States Department Of Energy | Chemoresistive gas sensor |
WO1997021094A1 (en) * | 1995-12-01 | 1997-06-12 | Innogenetics N.V. | Impedimetric detection system and method of production thereof |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
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DE4033658A1 (en) * | 1990-10-23 | 1992-04-30 | Siemens Ag | Processing trench edges in semiconductor substrates - using stream of particles, for simple, accurate silicon@ solar cell mfr. |
DE4143084A1 (en) * | 1991-12-27 | 1993-07-01 | Rudolf Prof Dr Hezel | MIS, pn junction, thin film solar cell mfr. |
DE4318519C2 (en) * | 1993-06-03 | 1996-11-28 | Fraunhofer Ges Forschung | Electrochemical sensor |
DE4421407C1 (en) * | 1994-06-18 | 1995-06-01 | Kurz Leonhard Fa | Area element with a three-dimensional regionally coated microstructure |
DE4444585A1 (en) * | 1994-12-14 | 1996-06-27 | Siemens Ag | Magnetic recording material for high-density data storage |
DE19610115C2 (en) * | 1996-03-14 | 2000-11-23 | Fraunhofer Ges Forschung | Detection of molecules and molecular complexes |
-
1999
- 1999-10-19 DE DE1999150378 patent/DE19950378B4/en not_active Expired - Fee Related
-
2000
- 2000-10-06 WO PCT/EP2000/009784 patent/WO2001029549A2/en not_active Application Discontinuation
- 2000-10-06 EP EP00975855A patent/EP1222453A2/en not_active Withdrawn
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4387165A (en) * | 1982-04-22 | 1983-06-07 | Youngblood James L | H2 S Detector having semiconductor and noncontinuous inert film deposited thereon |
US4674320A (en) * | 1985-09-30 | 1987-06-23 | The United States Of America As Represented By The United States Department Of Energy | Chemoresistive gas sensor |
WO1997021094A1 (en) * | 1995-12-01 | 1997-06-12 | Innogenetics N.V. | Impedimetric detection system and method of production thereof |
Non-Patent Citations (3)
Title |
---|
LIEBERWIRTH I ET AL: "NANOSTRUCTURED POLYMER FILMS BY ELECTRON-BEAM IRRADIATION AND SELECTIVE METALLIZATION" ADVANCED MATERIALS,DE,VCH VERLAGSGESELLSCHAFT, WEINHEIM, Bd. 10, Nr. 13, 10. September 1998 (1998-09-10), Seiten 997-1001, XP000781580 ISSN: 0935-9648 * |
SUGAWARA A ET AL: "SELF-ORGANIZED FE NANOWIRE ARRAYS PREPARED BY SHADOW DEPOSITION ON NACL(110) TEMPLATES" APPLIED PHYSICS LETTERS,US,AMERICAN INSTITUTE OF PHYSICS. NEW YORK, Bd. 70, Nr. 8, 24. Februar 1997 (1997-02-24), Seiten 1043-1045, XP000685188 ISSN: 0003-6951 * |
VAN GERWEN P ET AL: "Nanoscaled interdigitated electrode arrays for biochemical sensors" SENSORS AND ACTUATORS B,CH,ELSEVIER SEQUOIA S.A., LAUSANNE, Bd. 49, Nr. 1-2, 25. Juni 1998 (1998-06-25), Seiten 73-80, XP004141441 ISSN: 0925-4005 * |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1319943A3 (en) * | 2001-12-14 | 2006-06-07 | Stiftung Caesar Center of Advanced European Studies and Research | Impedance sensor for analytes in liquid solution |
US7351346B2 (en) | 2004-11-30 | 2008-04-01 | Agoura Technologies, Inc. | Non-photolithographic method for forming a wire grid polarizer for optical and infrared wavelengths |
US7561332B2 (en) | 2004-11-30 | 2009-07-14 | Agoura Technologies, Inc. | Applications and fabrication techniques for large scale wire grid polarizers |
Also Published As
Publication number | Publication date |
---|---|
DE19950378B4 (en) | 2005-07-21 |
DE19950378A1 (en) | 2001-05-10 |
WO2001029549A3 (en) | 2002-01-24 |
EP1222453A2 (en) | 2002-07-17 |
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