WO2001022016A1 - Supercritical fluid drying system - Google Patents
Supercritical fluid drying system Download PDFInfo
- Publication number
- WO2001022016A1 WO2001022016A1 PCT/US2000/025726 US0025726W WO0122016A1 WO 2001022016 A1 WO2001022016 A1 WO 2001022016A1 US 0025726 W US0025726 W US 0025726W WO 0122016 A1 WO0122016 A1 WO 0122016A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- container
- pressure vessel
- process fluid
- pressure
- base plate
- Prior art date
Links
Classifications
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F26—DRYING
- F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
- F26B3/00—Drying solid materials or objects by processes involving the application of heat
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
- B01J3/008—Processes carried out under supercritical conditions
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
- B01J3/06—Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a batch of workpieces
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S134/00—Cleaning and liquid contact with solids
- Y10S134/902—Semiconductor wafer
Definitions
- This invention relates to methods and apparatus for the fabrication of micro-electromechanical systems (MEMS), micro-opto-mechanical systems (MOEMS), surface micro machined systems, and similar wafer-mounted microstructures; and in particular to methods and apparatus for applying supercritical fluid drying techniques in the fabrication of microstructures.
- MEMS micro-electromechanical systems
- MOEMS micro-opto-mechanical systems
- surface micro machined systems and similar wafer-mounted microstructures
- FIG. 1 is a prior art illustration of a simple "anchored" SSM silicon based production process.
- a substrate such as Silicon
- a sacrificial material such as grown Silicon Dioxide or SiO 2 .
- the sacrificial material is etched to open a hole for the anchor of the structure.
- a structural material such as polysilicon is deposited on the sacrificial material.
- the sacrificial material is etched away to release the structural layer, creating the microstructure.
- SiO 2 is a common material for a sacrificial layer
- other materials like photoresists may be used in other applications.
- the wafer After removal of the sacrificial material or sacrificial layer by etching or other methods the wafer has to be rinsed to remove any residual trace of the etch liquid. Rinsing usually is done with deionized water, which causes the problem of stiction upon drying.
- Stiction or adhesion occurs when a "released" structure adheres to another surface.
- Fig. 2 gives a visual representation of stiction and how it is generated.
- Fig. 2a shows a properly released cantilevered polysilicon beam with rinsing liquid still trapped under it.
- Fig. 2b shows how the capillary force generated upon drying of the rinsing liquid pulls the beam towards the silicon substrate.
- Fig. 2c shows how the beam sticks to the substrate, rendering the device flawed.
- the capillary force responsible for the deformation of a beam upon drying as illustrated in Fig. 2, is represented by the following equation:
- ⁇ is the surface tension of the rinsing liquid
- A is the surface area that the beam shares with the substrate
- h is the height of the gap between the surface of the substrate and the beam
- ⁇ i and ⁇ 2 are the contact angles of the rinsing liquid with the substrate and the beam, respectively.
- the capillary force There are two methods of controlling the capillary force, (i) manipulating the contact angle of the rinsing liquid by modifying the surface tension of the rinsing liquid, or (ii) reducing or eliminating the surface tension ⁇ .
- the first method can only minimize the capillary force since the conditions of the surfaces in contact with the rinsing liquid, determining the contact angle, can vary.
- the condition of the rinsing liquid can vary during its use and may lead to unpredictable stiction and loss of yield.
- Working to find improvements to the controlled release of microstructures without subsequent sticking of these structures to the substrate researchers at the University of California at Berkeley have developed a process for drying silicon wafers in a supercritical fluid environment.
- the supercritical fluid of choice was CO 2 , carbon dioxide, due to its low critical point, determined by a critical temperature Tc of 31.1 degrees centigrade and a critical pressure pc of 1073 pounds per square inch over atmosphere.
- an intermediate process step has to be introduced based on the fact, that water, the rinsing liquid applied after the sacrificial etch step, is not miscible with CO 2 .
- the water After rinsing, when the wafer still is wet with water, the water has to be replaced by a material that is miscible with CO 2 .
- This material can be methanol or any other material that is to 100% miscible with CO 2 .
- the wafer has to be kept submerged in methanol till it is safely deposited in the process chamber.
- a silicon wafer containing a pattern of microelectronic structure having been fabricated in the conventional manner, but with the added step of replacing the rinsing liquid water by methanol, is introduced into a pressure vessel, with a horizontal orientation, submerged in methanol.
- the pressure vessel is first filled with methanol. Then the operator quickly transfers the wafer into the vessel while deftly attempting to maintain a liquid layer of methanol on the wafer surface during this transport. The pressure vessel is then sealed, and a through-flow of liquid carbon dioxide is introduced for about 15 minutes. The methanol is rapidly absorbed into the liquid carbon dioxide and carried out of the pressure vessel.
- a vessel that can be opened in cross section and when closed is subjected to elevated temperature and pressure to this extent must be of substantial construction, with a locking mechanism adequate to safely sustain the total pressure applied.
- a circumferential pattern of 8 bolts is used to secure the top to the base of the vessel, to contain the high pressure. Heat is applied to the vessel by external heaters, and ports in the vessel admit and remove the materials of the process.
- the device is not suitable for integration into a production line with automated means for inserting and removing wafers; there is no safe transfer mechanism to ensure that a liquid layer is maintained on the wafer during the transport or transfer process; the closing mechanism of the pressure vessel is manual and too slow; and the serially administered steps of the process are manually accomplished and too slow for production requirements.
- the device is also lacking the safeguards required by industrial standards and regulations for production requirements.
- the invention in its simplest form, is an apparatus and method for implementing and improving on the prior art methods for the drying of micro-electro-mechanical structures on silicon wafers or other substrate material or drying of wafers in general.
- a first process fluid or rinsing agent such as methanol
- FIG. 1 is a prior art representation of the sequential steps in the manufacturing of a typical Sacrificial Surface Micromachined (SSM) microelectromechanical system (MEMS) based device.
- SSM Sacrificial Surface Micromachined
- MEMS microelectromechanical system
- FIG. 2 is a prior art representation of the sequential steps device manufactured using Sacrificial Surface Micromachining method for manufacturing MEMS based device, experiencing stiction in the drying process.
- FIG. 3 is a perspective representation of the prior art laboratory apparatus for demonstrating the process of supercritical CO 2 drying of microstructures.
- FIG. 4 is a diagrammatic cross section view of the preferred embodiment apparatus of the invention, illustrated with the base plate in an open position relative to the inverted pressure vessel.
- FIG. 5 is a diagrammatic cross section view of the embodiment of Fig. 4, in a partially closed position where vessel tubes and container tubes are extending downward, respectively outside and inside the container
- FIG. 6 is a diagrammatic cross section view of the embodiment of Figs. 4 and 5, in a fully closed position, with the vessel and container tubes extending respectively to nearly the base plate and the bottom of the container.
- FIG. 7 is a schematic representation of the fluid valve and piping assembly of the embodiment of Figs. 4, 5 and 6. DESCRIPTION OF THE PREFERRED EMBODIMENT
- FIGs. 4, 5 and 6 show a preferred embodiment of the apparatus of the invention in its open, semi-open and closed positions, respectively.
- the apparatus can be operated with base plate (10), stationary, and pressure chamber (11), vertically movable; or with both base plate and pressure chamber movable; or with pressure chamber (11) held stationary and base plate (10) being vertically movable.
- An advantage of the inverted pressure vessel is the reduction of any particulates generated by a removable top and falling into the process environment.
- An advantage of the inverted, stationary vessel and movable base plate is the relative ease of elevating the base plate to the vessel, and the absence of flexible connections for supplying and removing process materials from the vessel.
- FIG. 6 it shows base plate (10) and pressure chamber (11) made of stainless steel and electro-polished.
- Base plate (10) and pressure chamber (11) are sealed using an O-ring seal (16).
- One or more wafers (13) are placed in a wafer cassette (14) which is made of quartz or stainless steel.
- the wafer cassette is aligned in container (12) using cassette alignment fixture (18).
- the container (12) is placed on the base plate (10) using a container alignment fixture (17).
- the container (12) is filled with a process fluid (15), such as methanol or acetone. The choice of such fluid depends on its miscibility with liquid carbon dioxide.
- the system contains internal heat exchanger (9) for heating and cooling the process fluid, for which external connections are provided through heat exchanger inlet (7) and heat exchanger outlet (8).
- the system incorporates rupture disk (6) as a safety feature to prevent over pressurization.
- the system also contains four process fluid lines that terminate in vertically extending tubes inside the pressure vessel; container inlet tube (1), vessel inlet tube (2), container outlet tube (4) and vessel outlet tube (5). Another line off the pressure vessel is provided for initial air purging of the system; purge line (3).
- Reservoir (28) contains CO 2 , which can be provided to process chamber of pressure vessel (10) at constant pressures higher than the critical point of CO 2 .
- the reservoir pressure is read at pressure gauge (27).
- the different components shown on the supply side are the main reservoir valve low flow (19), main reservoir valve high flow (35), and inline filter (30).
- the different valves connected to the chamber are the container inlet valve (21), vessel inlet valve (22), purge line valve (23), container outlet valve (24), vessel outlet valve (25), dual inlet valve (20), recovery inlet line valve low flow (31), and recovery inlet line valve high flow (34).
- Other components include rupture disk for safety (26), chamber pressure gauge (32), chamber pressure transducer (33) and separator and recovery system (29).
- wafer cassette (14), containing wafers (13) immersed in methanol is placed into a container (12) so that the liquid level is about 10 mm below the top of container (12), and about 10 mm above the top of wafers (13).
- the alignment of the wafer cassette to the container is done via cassette alignment fixture (18), and alignment of the container to the base plate is done via container alignment fixture (17), assuring that the container and the wafers are repeatably indexed to a precise location on base plate (10).
- the drying process is then started by pressing the start button on an associated control panel, not shown here but fully appreciated by those skilled in the art.
- the control panel display will prompt for any operator intervention and provides readout on process status during the drying cycle. Pressing the start button raises base plate (10).
- the base plate and pressure chamber (11) meet and are sealed via o-ring (16), and a locking mechanism (not shown) is actuated to provide suitable resistance to opening of the pressure vessel under all process operating pressures.
- pressure vessel (11) has multiple process material supply and removal lines that penetrate the vessel wall. Comparing Figs. 4,5, and 6; notice that when base plate (10) is raised, vertically extending container inlet tube (1) and container outlet tube (4) which protrude downwardly from the roof of the chamber of pressure vessel (1 1), enter container (12) and extend to nearly the bottom of the container as base plate (10) is raised into place. At the same time, vertically extending vessel inlet tube (2) and vessel outlet tube (5) also protrude from the roof of the chamber of pressure vessel (11), not entering container (12) when the base plate (10) is raised, but extending outside the container nearly to the base plate, outside container (12).
- the main reservoir valve low flow (19), the dual inlet valve (20), the vessel inlet valve (22), the purge line valve (23), and the vessel outlet valve (25) are opened.
- the container inlet valve (21) and the container outlet valve (24) are closed.
- the recovery inlet valve low flow (31 ) and recovery inlet valve high flow (34) are both closed. It is important to pressurize the vessel slowly to avoid turbulence that might damage the microstructures on wafers (13).
- Carbon dioxide is introduced into the pressure chamber at a very slow rate, and the chamber pressure is monitored via readout from the pressure gauges (27), (32) and pressure transducers (33), (36). Since CO 2 is heavier than air, it slowly pushes air out of the chamber through purge line (3). This ensures the removal of air from the chamber. Purging is done until the chamber is completely filled with CO 2 and all air has been exhausted.
- the purge line valve (23) is closed, and the chamber is pressurized to about 700 psi.
- main reservoir valve high flow (35) is opened, and the chamber is pressurized faster to go to 1100 psi.
- the desired pressure is achieved, which is monitored via chamber pressure transducer (33) as well as chamber pressure gauge (32), the dual inlet valve (20), and vessel outlet valve (25), are closed .
- the system at this point contains methanol contained in the container and liquid CO 2 , surrounding the container in the chamber.
- the next step is removal of methanol from the system and its replacement with liquid CO 2 .
- the container outlet valve (24), and the recovery inlet valve low flow (31), are opened, whereas vessel outlet valve (25) remains closed.
- the siphon action of the container outlet tube (4) ensures the flow of methanol from the vessel to the separator and recovery system.
- the methanol is continuously replaced by liquid CO 2 .
- the constant flow of CO via the vessel inlet tube (2) into the chamber finally results in removal of methanol from container ( 12).
- the line coming from the recovery inlet line valve low flow (31) is monitored for end point detection to determine when the methanol has been replaced completely. Once no methanol is present, all system valves are closed. At this time the chamber is filled with liquid carbon dioxide at 1100 psi.
- the CO 2 in the pressure vessel is heated to about 35 - 40 degree centigrade to transform the liquid CO 2 into it's supercritical state.
- a thermocouple (not shown) is mounted within pressure vessel (11), which provides temperature information back to a system control computer. As heat is applied and the temperature of the CO 2 is raised, there is a corresponding increase in pressure. If the pressure reaches a value above a set point pressure calculated to be the maximum safe operating pressure for pressure vessel (11), the recovery inlet high flow valve (34) is opened to relieve the pressure.
- the container outlet valve (24), vessel outlet valve (25), recovery inlet valve high flow (34), are opened to achieve atmospheric pressure.
- the heat exchanger switches to cooling mode to bring the vessel to less than 25 degree centigrade. This ensures that at the start of the next cycle, the vessel will be at lower than critical temperature condition.
- the pressure vessel can now be opened, and wafer carrier (14) can be removed manually or by automatic means, leaving the system ready for the next drying cycle.
- the invention is capable of other and different embodiments, including configurations adapted to handling wafers horizontally, as in a vertically stacked wafer cassette. Its several details are capable of modifications in various obvious respects, all without departing from the essence of the invention.
- an apparatus for drying wafers in a supercritical environment consisting of an inverted pressure vessel, a horizontal base plate, a wafer cassette configured for supporting at least one wafer for drying, a container sufficiently large to submerge the wafer cassette and at least one wafer in a first process fluid such as methanol, and where the container is also sufficiently small enough to fit on the base plate and within the pressure vessel.
- the apparatus may include a way for aligning the wafer cassette within the container, such as a simple fixture on the bottom of the container, and a way for aligning the container on the base plate, again such as a simple fixture on the base plate.
- the apparatus may also have an elevator or screw assembly or other lift and lock mechanism for bringing the pressure vessel and base plate into a closed and sealed relationship.
- the apparatus may further include a way for displacing the air in the pressure vessel with a second process fluid in a gaseous state, such as Carbon Dioxide, and a way to elevate the second process fluid to a liquid state, and then displace the first process fluid in the container with the second process fluid without any intervening contact of the wafer by air or other substances.
- the apparatus may further include a way for elevating the second process fluid to a supercritical state, and then reducing pressure in the pressure vessel to ambient pressure. There may also be a way for cooling the remaining second process fluid to below its supercritical temperature.
- the pressure vessel may include an internal capability for heating and cooling, such as a heat exchanger connected to external sources of heated and cooled fluids, so that it can be operated in a heating or cooling mode.
- There may also be a purge line at the top of the pressure vessel and an associated purge line valve for venting the pressure vessel.
- the apparatus may be set up with associated equipment for automatic loading of the pressure vessel with wafers submerged in the first process fluid.
- a method for drying wafers in a supercritical environment consisting of using an apparatus of the invention and aligning a wafer cassette within the container, submerged in a first process fluid, aligning the container on the base plate, bringing the pressure vessel and base plate into a closed and sealed relationship, and displacing the air in the pressure vessel with a second process fluid in a gaseous state.
- the method may include elevating the second process fluid to a liquid state, displacing the first process fluid in the container with the second process fluid in its liquid state.
- the method may then include the steps of elevating the second process fluid to a supercritical state so as to dry the wafers, then reducing the pressure in the pressure vessel to ambient pressure, and cooling the second process fluid to below supercritical temperature.
Abstract
Description
Claims
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020027003637A KR20020060182A (en) | 1999-09-20 | 2000-09-20 | Supercritical fluid drying system |
AU75939/00A AU7593900A (en) | 1999-09-20 | 2000-09-20 | Supercritical fluid drying system |
EP00965176A EP1214555B1 (en) | 1999-09-20 | 2000-09-20 | Supercritical fluid drying system |
IL14842400A IL148424A0 (en) | 1999-09-20 | 2000-09-20 | Supercritical fluid drying system |
AT00965176T ATE285555T1 (en) | 1999-09-20 | 2000-09-20 | DRYING SYSTEM USING A SUPERCRITICAL LIQUID |
JP2001525145A JP2003510801A (en) | 1999-09-20 | 2000-09-20 | Supercritical fluid drying system |
DE60016938T DE60016938T2 (en) | 1999-09-20 | 2000-09-20 | DRYING SYSTEM USING AN OVERCRITICAL LIQUID |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15545499P | 1999-09-20 | 1999-09-20 | |
US60/155,454 | 1999-09-20 | ||
US09/632,770 | 2000-08-04 | ||
US09/632,770 US6508259B1 (en) | 1999-08-05 | 2000-08-04 | Inverted pressure vessel with horizontal through loading |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2001022016A1 true WO2001022016A1 (en) | 2001-03-29 |
Family
ID=26852346
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2000/025726 WO2001022016A1 (en) | 1999-09-20 | 2000-09-20 | Supercritical fluid drying system |
Country Status (10)
Country | Link |
---|---|
US (1) | US6508259B1 (en) |
EP (1) | EP1214555B1 (en) |
JP (1) | JP2003510801A (en) |
KR (1) | KR20020060182A (en) |
CN (1) | CN1127653C (en) |
AT (1) | ATE285555T1 (en) |
AU (1) | AU7593900A (en) |
DE (1) | DE60016938T2 (en) |
IL (1) | IL148424A0 (en) |
WO (1) | WO2001022016A1 (en) |
Cited By (7)
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---|---|---|---|---|
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US9027576B2 (en) | 2013-03-12 | 2015-05-12 | Samsung Electronics Co., Ltd. | Substrate treatment systems using supercritical fluid |
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW499696B (en) * | 1999-04-27 | 2002-08-21 | Tokyo Electron Ltd | Processing apparatus and processing method |
US6748960B1 (en) * | 1999-11-02 | 2004-06-15 | Tokyo Electron Limited | Apparatus for supercritical processing of multiple workpieces |
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US7434590B2 (en) * | 2004-12-22 | 2008-10-14 | Tokyo Electron Limited | Method and apparatus for clamping a substrate in a high pressure processing system |
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US20060180572A1 (en) * | 2005-02-15 | 2006-08-17 | Tokyo Electron Limited | Removal of post etch residue for a substrate with open metal surfaces |
US20060180174A1 (en) * | 2005-02-15 | 2006-08-17 | Tokyo Electron Limited | Method and system for treating a substrate with a high pressure fluid using a peroxide-based process chemistry in conjunction with an initiator |
US7291565B2 (en) * | 2005-02-15 | 2007-11-06 | Tokyo Electron Limited | Method and system for treating a substrate with a high pressure fluid using fluorosilicic acid |
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US7380984B2 (en) * | 2005-03-28 | 2008-06-03 | Tokyo Electron Limited | Process flow thermocouple |
US20060226117A1 (en) * | 2005-03-29 | 2006-10-12 | Bertram Ronald T | Phase change based heating element system and method |
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Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4245154A (en) * | 1977-09-24 | 1981-01-13 | Tokyo Ohka Kogyo Kabushiki Kaisha | Apparatus for treatment with gas plasma |
US5167716A (en) * | 1990-09-28 | 1992-12-01 | Gasonics, Inc. | Method and apparatus for batch processing a semiconductor wafer |
US5571330A (en) * | 1992-11-13 | 1996-11-05 | Asm Japan K.K. | Load lock chamber for vertical type heat treatment apparatus |
US5589224A (en) * | 1992-09-30 | 1996-12-31 | Applied Materials, Inc. | Apparatus for full wafer deposition |
US5621982A (en) * | 1992-07-29 | 1997-04-22 | Shinko Electric Co., Ltd. | Electronic substrate processing system using portable closed containers and its equipments |
US5644855A (en) * | 1995-04-06 | 1997-07-08 | Air Products And Chemicals, Inc. | Cryogenically purged mini environment |
US5746008A (en) * | 1992-07-29 | 1998-05-05 | Shinko Electric Co., Ltd. | Electronic substrate processing system using portable closed containers |
US5934991A (en) * | 1998-02-01 | 1999-08-10 | Fortrend Engineering Corporation | Pod loader interface improved clean air system |
US6013317A (en) * | 1994-09-09 | 2000-01-11 | Tokyo Electron Limited | Coating apparatus and method therefor |
US6029371A (en) * | 1997-09-17 | 2000-02-29 | Tokyo Electron Limited | Drying treatment method and apparatus |
US6082948A (en) * | 1992-11-06 | 2000-07-04 | Applied Materials, Inc. | Controlled environment enclosure and mechanical interface |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3744660A (en) | 1970-12-30 | 1973-07-10 | Combustion Eng | Shield for nuclear reactor vessel |
GB1594935A (en) | 1976-11-01 | 1981-08-05 | Gen Descaling Co Ltd | Closure for pipe or pressure vessel and seal therefor |
US4789077A (en) | 1988-02-24 | 1988-12-06 | Public Service Electric & Gas Company | Closure apparatus for a high pressure vessel |
US4823976A (en) | 1988-05-04 | 1989-04-25 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Quick actuating closure |
FR2651827A1 (en) | 1989-09-08 | 1991-03-15 | Clera Sa | MANUAL DEVICE FOR OPENING AND CLOSING A TANK DOOR. |
US5236669A (en) | 1990-09-12 | 1993-08-17 | E. I. Du Pont De Nemours And Company | Pressure vessel |
CH684402A5 (en) | 1991-03-04 | 1994-09-15 | Xorella Ag Wettingen | Device for sliding and pivoting of a container-closure. |
US5251776A (en) | 1991-08-12 | 1993-10-12 | H. William Morgan, Jr. | Pressure vessel |
DE9112761U1 (en) | 1991-10-14 | 1992-04-09 | Krones Ag Hermann Kronseder Maschinenfabrik, 8402 Neutraubling, De | |
US5221019A (en) | 1991-11-07 | 1993-06-22 | Hahn & Clay | Remotely operable vessel cover positioner |
US5427625A (en) * | 1992-12-18 | 1995-06-27 | Tokyo Electron Kabushiki Kaisha | Method for cleaning heat treatment processing apparatus |
US5433334A (en) | 1993-09-08 | 1995-07-18 | Reneau; Raymond P. | Closure member for pressure vessel |
US5509431A (en) * | 1993-12-14 | 1996-04-23 | Snap-Tite, Inc. | Precision cleaning vessel |
US5556497A (en) | 1995-01-09 | 1996-09-17 | Essef Corporation | Fitting installation process |
US6097015A (en) | 1995-05-22 | 2000-08-01 | Healthbridge, Inc. | Microwave pressure vessel and method of sterilization |
US5992680A (en) | 1996-01-29 | 1999-11-30 | Smith; Philip E. | Slidable sealing lid apparatus for subsurface storage containers |
DK9600149U3 (en) | 1996-05-01 | 1997-09-12 | Moerch & Soenner A S | cover assembly |
US5706319A (en) | 1996-08-12 | 1998-01-06 | Joseph Oat Corporation | Reactor vessel seal and method for temporarily sealing a reactor pressure vessel from the refueling canal |
US5908510A (en) * | 1996-10-16 | 1999-06-01 | International Business Machines Corporation | Residue removal by supercritical fluids |
US6068002A (en) * | 1997-04-02 | 2000-05-30 | Tokyo Electron Limited | Cleaning and drying apparatus, wafer processing system and wafer processing method |
US6085935A (en) | 1998-08-10 | 2000-07-11 | Alliance Laundry Systems Llc | Pressure vessel door operating apparatus |
JP2000227283A (en) * | 1999-02-03 | 2000-08-15 | Kobe Steel Ltd | Apparatus for pressurizing treatment of semiconductor |
-
2000
- 2000-08-04 US US09/632,770 patent/US6508259B1/en not_active Expired - Fee Related
- 2000-09-20 IL IL14842400A patent/IL148424A0/en unknown
- 2000-09-20 KR KR1020027003637A patent/KR20020060182A/en active IP Right Grant
- 2000-09-20 JP JP2001525145A patent/JP2003510801A/en active Pending
- 2000-09-20 CN CN00812047A patent/CN1127653C/en not_active Expired - Fee Related
- 2000-09-20 AT AT00965176T patent/ATE285555T1/en not_active IP Right Cessation
- 2000-09-20 WO PCT/US2000/025726 patent/WO2001022016A1/en active IP Right Grant
- 2000-09-20 EP EP00965176A patent/EP1214555B1/en not_active Expired - Lifetime
- 2000-09-20 DE DE60016938T patent/DE60016938T2/en not_active Expired - Fee Related
- 2000-09-20 AU AU75939/00A patent/AU7593900A/en not_active Abandoned
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4245154A (en) * | 1977-09-24 | 1981-01-13 | Tokyo Ohka Kogyo Kabushiki Kaisha | Apparatus for treatment with gas plasma |
US5167716A (en) * | 1990-09-28 | 1992-12-01 | Gasonics, Inc. | Method and apparatus for batch processing a semiconductor wafer |
US5621982A (en) * | 1992-07-29 | 1997-04-22 | Shinko Electric Co., Ltd. | Electronic substrate processing system using portable closed containers and its equipments |
US5746008A (en) * | 1992-07-29 | 1998-05-05 | Shinko Electric Co., Ltd. | Electronic substrate processing system using portable closed containers |
US5589224A (en) * | 1992-09-30 | 1996-12-31 | Applied Materials, Inc. | Apparatus for full wafer deposition |
US6082948A (en) * | 1992-11-06 | 2000-07-04 | Applied Materials, Inc. | Controlled environment enclosure and mechanical interface |
US5571330A (en) * | 1992-11-13 | 1996-11-05 | Asm Japan K.K. | Load lock chamber for vertical type heat treatment apparatus |
US6013317A (en) * | 1994-09-09 | 2000-01-11 | Tokyo Electron Limited | Coating apparatus and method therefor |
US5644855A (en) * | 1995-04-06 | 1997-07-08 | Air Products And Chemicals, Inc. | Cryogenically purged mini environment |
US6029371A (en) * | 1997-09-17 | 2000-02-29 | Tokyo Electron Limited | Drying treatment method and apparatus |
US5934991A (en) * | 1998-02-01 | 1999-08-10 | Fortrend Engineering Corporation | Pod loader interface improved clean air system |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1358021A1 (en) * | 2000-08-04 | 2003-11-05 | S. C. Fluids, Inc. | Inverted pressure vessel with shielded closure mechanism |
EP1358021A4 (en) * | 2000-08-04 | 2004-03-31 | S C Fluids Inc | Inverted pressure vessel with shielded closure mechanism |
EP1573779A2 (en) * | 2001-04-10 | 2005-09-14 | Tokyo Electron Limited | High pressure processing chamber for semiconductor substrate including flow enhancing features |
EP1573779A4 (en) * | 2001-04-10 | 2006-11-15 | Tokyo Electron Ltd | High pressure processing chamber for semiconductor substrate including flow enhancing features |
CN100392796C (en) * | 2001-04-10 | 2008-06-04 | 东京毅力科创株式会社 | High pressure processing chamber for semiconductor substrate including flow enhancing features |
US6880560B2 (en) | 2002-11-18 | 2005-04-19 | Techsonic | Substrate processing apparatus for processing substrates using dense phase gas and sonic waves |
US7767145B2 (en) | 2005-03-28 | 2010-08-03 | Toyko Electron Limited | High pressure fourier transform infrared cell |
US9027576B2 (en) | 2013-03-12 | 2015-05-12 | Samsung Electronics Co., Ltd. | Substrate treatment systems using supercritical fluid |
CN109012493A (en) * | 2018-08-16 | 2018-12-18 | 宋波 | Depressurize operation type fuel rod application apparatus |
CN114001526A (en) * | 2021-11-01 | 2022-02-01 | 华海清科股份有限公司 | Wafer lifting and drying method and wafer drying device |
Also Published As
Publication number | Publication date |
---|---|
ATE285555T1 (en) | 2005-01-15 |
KR20020060182A (en) | 2002-07-16 |
EP1214555A4 (en) | 2004-04-07 |
IL148424A0 (en) | 2002-09-12 |
DE60016938T2 (en) | 2005-12-15 |
US6508259B1 (en) | 2003-01-21 |
EP1214555A1 (en) | 2002-06-19 |
DE60016938D1 (en) | 2005-01-27 |
EP1214555B1 (en) | 2004-12-22 |
CN1371462A (en) | 2002-09-25 |
JP2003510801A (en) | 2003-03-18 |
AU7593900A (en) | 2001-04-24 |
CN1127653C (en) | 2003-11-12 |
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