WO2001020638A1 - A surface treatment process used in growing a carbon film - Google Patents
A surface treatment process used in growing a carbon film Download PDFInfo
- Publication number
- WO2001020638A1 WO2001020638A1 PCT/US2000/024284 US0024284W WO0120638A1 WO 2001020638 A1 WO2001020638 A1 WO 2001020638A1 US 0024284 W US0024284 W US 0024284W WO 0120638 A1 WO0120638 A1 WO 0120638A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- substrate
- carbon film
- recited
- treated
- film
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/304—Field-emissive cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
- H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
Definitions
- the present invention relates in general to growing carbon films, and in particular, to growing a carbon film on a treated substrate.
- Field emission display devices show promise in providing a low cost alternative to LCD displays, especially with respect to laptop computers. Furthermore, field emission devices are beginning to be practically applied in other areas, such as billboard-type display devices.
- One of the challenges in producing a good field emission device or display is the manufacture of a field emitter material, which is inexpensive to manufacture yet efficient with respect to power consumption and consistent in its display characteristics. Carbon and/or diamond field emitter materials have shown promise in meeting such constraints.
- One of the problems with the present method for fabricating a matrix addressable display using such a film is that in order to pattern the film, one or more lithography and etching steps have to be applied to the film after it has been deposited. Such processes degrade the film's performance and emission capabilities, often to the point where the film emissions are inadequate. As a result, there is a need in the art for a fabrication process whereby post-deposition processes performed on the film are not utilized.
- a substrate such as a ceramic or glass
- a desired metal feedline pattern is then made by conventional photolithography and etching of the metal. This pattern can also be made by metalization through a shadow mask.
- Emitting areas, or pixels are then defined by another lithography process. The metal layer in these areas are removed again by etching.
- a surface treatment process such as an acid or base etch is then applied, in which the surface mo ⁇ hology and possibly chemical composition (if non-elemental materials are used) of the substrate in the pixel areas are changed.
- Another thin layer of metal is then further deposited.
- the photoresist is stripped, leaving only the pixel area treated and the thin metal layer coated.
- a thin layer of emitting carbon film is deposited all over the surface. Since the pixel areas have been treated such that the surface mo ⁇ hology on these areas not only greatly enhances the nucleation. but also the growth of the carbon film, electron emission is promoted from the carbon film at these pixel areas. As a result, even though the carbon film was not patterned, only the pixel areas emit when an electrical field is applied to the film.
- An alternative is that no thin metal layer is deposited on the active area; the emitting carbon film is deposited directly onto the treated substrate. This alternative is applicable when each pixel area is small (less than a few hundreds of micrometers square, as an example).
- Another alternative is that a surface treatment is applied with or without lithography to the substrate before it is metalized. A metal layer is then deposited onto the substrate with or without any patterning. Carbon film is then deposited. In the instance of no patterning for both active area and metalization, the entire substrate surface will emit electrons effectively, which is useful for such applications as lighting or cold electron sources.
- FIGURES 1-9 illustrate a deposition process in accordance with the present invention
- FIGURE 10 illustrates a flow diagram in accordance with the present invention
- FIGURES 1 1-14 illustrate images of emission from a cathode manufactured in accordance with the present invention
- FIGURES 15 A and 15B illustrate the difference in a substrate surface due to the treating step 1006 in FIGURE 10;
- FIGURE 16 illustrates a data processing system utilizing a display device manufactured with a field emitter in accordance with the present invention
- FIGURE 17 illustrates a field emission device manufactured with a film in accordance with the present invention.
- a substrate 101 which may be comprised of glass, ceramic, or any other suitable material, is cleaned and then coated (metalized) with a metal 102 such as titanium (Ti), by electron-beam (e-beam) evaporation or sputtering (see FIGURE 1). Note, however, that any process for depositing a metal layer 102 on a substrate 101 may be utilized.
- the metal layer 102 is patterned in a desired manner using photolithography.
- a photoresist layer 201 is deposited on the metal layer 102 (see FIGURE 2) and then patterned using well-known techniques. (See FIGURES 2, 3A and 3B.)
- the pattern may be an array of strips developed in the photoresist film. However, please note that any pattern design may be employed. This pattern can optionally be made by metalization (deposition of a metal line) through a shadow mask (step 1003).
- Emitting areas, or pixels, are then defined by another lithography process.
- photoresist 201 is developed into a pattern (step 1004).
- the metal layer that is not covered by the photoresist windows is then removed by an etching step as shown in FIGURES 5A and 5B (step 1005).
- step 1006 utilizing the same photoresist 201 as a mask, a surface treatment process, such as an acid or base etch, is then applied, in which the surface mo ⁇ hology and possibly the chemical composition (if non-elemental materials are used) of the substrate 101 in the pixel areas are changed. This results in a treated substrate surface 301 , as illustrated in FIGURES 6A and 6B.
- a surface treatment process such as an acid or base etch
- the surface is roughened.
- surface treatments by acids and bases may also change the chemical composition of the substrate surface as well as change the mo ⁇ hology. For example, certain treatments may leave the surface of a substrate terminated with bonds to hydrogen or fluorine atoms. If the substrate is a composition of different materials, the treatment may result in leaving the surface with a different composition than the bulk material of the substrate. Because, the CVD growth process often involves chemical reactions with the substrate surface, treatments that change the chemical composition of the substrate surface results in a surface that initiates emitter film growth more favorably than an untreated surface.
- step 1007 an optional step is performed of depositing a thin layer of metal 401 on top of the treated active area 301 and the photoresist 201, as illustrated in FIGURE 7.
- step 1008 the photoresist 201 and the metal layer 401 thereon are stripped, leaving only the treated pixel area with the coating of thin metal 401 thereon, as illustrated in FIGURES 8A and 8B.
- step 1009 a thin layer of emitting carbon film 501 is deposited all over the surfaces of thin metal layer 401, metal lines 102 and substrate 101, as illustrated in FIGURES 9A and 9B.
- step 1009 may be performed using a chemical vapor deposition process, which may be assisted by other activation means, such as a hot-filament process.
- an advantage of this process is that microelectronics type processing, such as lithography or etching steps, need not be performed subsequent to deposition of a carbon layer, so that the carbon layer is not subject to such processes. This results in a better emitting film and damage to the emitting film is prevented.
- an alternative embodiment does not perform step 1007. Instead, the emitting carbon film 501 is deposited directly onto the treated substrate 301.
- the surface treatment 1006 is applied with or without lithography to the substrate before it is metalized. A metal layer is then deposited onto the substrate with or without any patterning. The carbon film 501 is then lastly deposited.
- field emitter device 80 configured with a film produced of the processes illustrated in FIGURE 10.
- Device 80 could be utilized as a pixel within a display device, such as within display 938 described below with respect to FIGURE 16.
- Device 80 also includes anode 84, which may comprise any well-known structure. Illustrated is anode 84 having a substrate 805. with a conductive strip 806 deposited thereon. Then, phosphor layer 807 is placed upon conductive film 806. An electrical potential V+ is applied between anode 84 and cathode 82 as shown to produce an electric field, which will cause electrons to emit from film 501 towards phosphor layer 807, which will result in the production of photons through glass substrate 805. Note that an alternative embodiment might include a conductive layer deposited between film 501 and substrate 101. A further alternative embodiment may include one or more gate electrodes (not shown). The gap between anode 84 and cathode 82 may be 0.75 millimeters (750 microns).
- FIGURES 1 1-13 there are shown actual images of photon emission from device 80 taken with different applied voltages, and hence, different applied fields between the anode 84 and the cathode 82.
- the images in FIGURES 1 1-13 were taken by applying a pulsed voltage at 1000Hz frequency with a 10 microsecond pulse width.
- the gap between anode and cathode was 0.75 mm.
- the peak emission current was 4 mA with an applied voltage of 3230 volts.
- the peak emission current was 40 mA with an applied voltage of 4990 volts.
- the peak emission current was 20 mA with an applied voltage of 3720 volts.
- FIGURE 14 shows a similar actual image from a similar test except that the gap between the anode 84 and cathode 82 is much smaller (43 microns) and the camera set-up to take this image provided a higher resolution image. Again, one can see from the lighted areas of the phosphor that the area on the cathode 82 that was subjected to the treatment process is the area from where almost all the electron emission occurs.
- FIGURE 15A shows a digital photograph of a Confocal laser scanning microscopic image of a substrate before it has been treated in step 1006.
- FIGURE 15B shows the same substrate after surface treatment in step 1006. It is quite clear that the surface treatment enhanced the surface roughness of the substrate, which in this instance changed from 0.27 to 0.39 micrometers.
- field emitter device 80 may be utilized within field emission display 938 illustrated in FIGURE 16.
- FIGURE 16 A representative hardware environment for practicing the present invention is depicted in FIGURE 16. which illustrates a typical hardware configuration of workstation 913 in accordance with the subject invention having central processing unit (CPU) 910, such as a conventional microprocessor, and a number of other units interconnected via system bus 912.
- CPU central processing unit
- Workstation 913 includes random access memory (RAM) 914, read only memory (ROM) 916, and input/output (I/O) adapter 918 for connecting peripheral devices such as disk units 920 and tape drives 940 to bus 912, user interface adapter 922 for connecting keyboard 924, mouse 926, speaker 928, microphone 932, and/or other user interface devices such as a touch screen device (not shown) to bus 912, communication adapter 934 for connecting workstation 913 to a data processing network, and display adapter 936 for connecting bus 912 to display device 938.
- CPU 910 may include other circuitry not shown herein, which will include circuitry commonly found within a microprocessor, e.g., execution unit, bus interface unit, arithmetic logic unit, etc.
- CPU 910 may also reside on a single integrated circuit.
Abstract
Description
Claims
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001524124A JP4975923B2 (en) | 1999-09-15 | 2000-08-31 | Surface treatment method used when growing carbon films |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/396,343 | 1999-09-15 | ||
US09/396,343 US6310432B1 (en) | 1997-05-21 | 1999-09-15 | Surface treatment process used in growing a carbon film |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2001020638A1 true WO2001020638A1 (en) | 2001-03-22 |
Family
ID=23566834
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2000/024284 WO2001020638A1 (en) | 1999-09-15 | 2000-08-31 | A surface treatment process used in growing a carbon film |
Country Status (4)
Country | Link |
---|---|
US (2) | US6310432B1 (en) |
JP (1) | JP4975923B2 (en) |
KR (1) | KR100809174B1 (en) |
WO (1) | WO2001020638A1 (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7125308B2 (en) * | 2003-12-18 | 2006-10-24 | Nano-Proprietary, Inc. | Bead blast activation of carbon nanotube cathode |
US7736209B2 (en) * | 2004-09-10 | 2010-06-15 | Applied Nanotech Holdings, Inc. | Enhanced electron field emission from carbon nanotubes without activation |
TWI380070B (en) * | 2007-01-17 | 2012-12-21 | Taiwan Tft Lcd Ass | Optical film and manufacturing method thereof and substrate structure and display panel using the optical film |
KR100883332B1 (en) * | 2007-05-23 | 2009-02-11 | 한국과학기술연구원 | Chemical pre-treatment of substrate for growing high quality thin films, and formation of thermoelectric thin films using the same |
US20170105287A1 (en) * | 2015-10-12 | 2017-04-13 | Tyco Electronics Corporation | Process of Producing Electronic Component and an Electronic Component |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5449970A (en) * | 1992-03-16 | 1995-09-12 | Microelectronics And Computer Technology Corporation | Diode structure flat panel display |
US5659224A (en) * | 1992-03-16 | 1997-08-19 | Microelectronics And Computer Technology Corporation | Cold cathode display device |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5759080A (en) * | 1987-07-15 | 1998-06-02 | Canon Kabushiki Kaisha | Display device with electron-emitting device with electron-emitting region insulated form electrodes |
JP2637508B2 (en) * | 1988-02-08 | 1997-08-06 | キヤノン株式会社 | Method for forming vapor-phase synthetic diamond crystal and substrate having diamond crystal |
US5285129A (en) * | 1988-05-31 | 1994-02-08 | Canon Kabushiki Kaisha | Segmented electron emission device |
US5698328A (en) * | 1994-04-06 | 1997-12-16 | The Regents Of The University Of California | Diamond thin film electron emitter |
US5637950A (en) * | 1994-10-31 | 1997-06-10 | Lucent Technologies Inc. | Field emission devices employing enhanced diamond field emitters |
US5852341A (en) * | 1994-11-14 | 1998-12-22 | Crystallume | Diamond film with sharp field emission turn-on |
US5628659A (en) * | 1995-04-24 | 1997-05-13 | Microelectronics And Computer Corporation | Method of making a field emission electron source with random micro-tip structures |
JPH0927263A (en) * | 1995-07-11 | 1997-01-28 | Fuji Electric Co Ltd | Cold cathode element |
US5696385A (en) * | 1996-12-13 | 1997-12-09 | Motorola | Field emission device having reduced row-to-column leakage |
JPH10203810A (en) * | 1997-01-21 | 1998-08-04 | Canon Inc | Production of carbon nanotube |
US7070651B1 (en) * | 1997-05-21 | 2006-07-04 | Si Diamond Technology, Inc. | Process for growing a carbon film |
-
1999
- 1999-09-15 US US09/396,343 patent/US6310432B1/en not_active Expired - Fee Related
-
2000
- 2000-08-31 WO PCT/US2000/024284 patent/WO2001020638A1/en active Application Filing
- 2000-08-31 JP JP2001524124A patent/JP4975923B2/en not_active Expired - Fee Related
- 2000-08-31 KR KR1020027003400A patent/KR100809174B1/en active IP Right Grant
-
2001
- 2001-01-04 US US09/754,558 patent/US6630023B2/en not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5449970A (en) * | 1992-03-16 | 1995-09-12 | Microelectronics And Computer Technology Corporation | Diode structure flat panel display |
US5659224A (en) * | 1992-03-16 | 1997-08-19 | Microelectronics And Computer Technology Corporation | Cold cathode display device |
Also Published As
Publication number | Publication date |
---|---|
US6630023B2 (en) | 2003-10-07 |
KR100809174B1 (en) | 2008-02-29 |
JP2003509824A (en) | 2003-03-11 |
KR20020030823A (en) | 2002-04-25 |
US6310432B1 (en) | 2001-10-30 |
US20010001679A1 (en) | 2001-05-24 |
JP4975923B2 (en) | 2012-07-11 |
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