WO2001020254A1 - Spatial averaging technique for ellipsometry and reflectometry - Google Patents
Spatial averaging technique for ellipsometry and reflectometry Download PDFInfo
- Publication number
- WO2001020254A1 WO2001020254A1 PCT/US2000/025028 US0025028W WO0120254A1 WO 2001020254 A1 WO2001020254 A1 WO 2001020254A1 US 0025028 W US0025028 W US 0025028W WO 0120254 A1 WO0120254 A1 WO 0120254A1
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- WO
- WIPO (PCT)
- Prior art keywords
- measurement area
- probe beam
- recited
- optical
- measurement
- Prior art date
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/21—Polarisation-affecting properties
- G01N21/211—Ellipsometry
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
- G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
- G01B11/0641—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of polarization
- G01B11/065—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of polarization using one or more discrete wavelengths
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
Definitions
- This invention relates to ellipsometry and reflectometry optical metrology tools that are used to evaluate semiconductor wafers and is directed to reducing errors associated with material surrounding a desired measurement area or pad, either by minimizing the uncertainties in positioning the measurement beam or by taking into account the effects of the surrounding material in analyzing the measured data.
- the desired measurement would be of the thin layer 10 at the bottom of the well.
- the thin film layer 10 might be composed of a thin gate oxide layer, for instance. Crowding the beam is a top layer 20 that could well be composed of an entirely different material with significantly different optical properties than the layer to be evaluated.
- shrinking the optical measurement spot size may generally be desirable in itself, such shrinking always comes at some cost.
- the measurement beam source has a broad spatial extent (such as a tungsten filament or the arc of an arc lamp)
- the light intensity at the sample surface tends to have an upper limit such that shrinking the optical spot means lowering the total amount of light.
- lowering the total light available for measuring tends to degrade the performance characteristics of the instrument because of decreased signal to noise ratios.
- the measurement beam is bright and well collimated (such as a laser beam)
- the optical spot size will be still be limited by the power and complexity of the focusing lenses used to focus the beam on the sample surface. For a given beam diameter, shrinking the spot size means decreasing the focal length of the focusing lenses.
- One aspect of the present invention is directed to a means of minimizing the stage positioning uncertainties by using a novel technique for finding the center of the measurement pad. This technique takes advantage of the fact that while the absolute accuracy of a positioning stage may be as poor as several microns, the ability of the stage to make incremental movements is much finer.
- the present invention is directed to a novel method for taking into account the effects of the surrounding material in analyzing the measured data.
- a first aspect of the present invention utilizes a technique where initially one purposefully aims to place the optical spot of the measurement beam a few microns away from the center of the target pad. Then a series of measurements are made with each measurement separated by a small stage jog as the optical spot is scanned over the measurement pad. The data from these measurements are stored for analysis at the end of the scan. Once the scan is complete, these data are analyzed to find the center of the pad. Provided the surrounding material is the same on both sides of the pad (nearly always the case), one finds that some aspect of the data invariably has either a cup or inverted "U” shape or an inverted cup or "U” shape when viewed as a function of position.
- This cup or U-shape simply reflects the fact that the surrounding material is altering the measurement and that the perturbation of the data is a minimum at the center of the pad.
- the point of minimum perturbation should correspond to a minimum in the slope of the curve. Once this minimum is identified, the position along the wafer corresponding to that data point is selected as representing the center of the pad.
- a novel method of data analysis is used that allows for the correction of the effects of the surrounding material in analyzing the data. In essence, the data collected at the center of the pad is treated as being created by a superposition of light coming from the pad material itself and light coming from the surrounding material.
- the influence of the two materials is weighted by the proportion of the light that reflects off the pad as compared with the light that reflects off of the surrounding material.
- the resulting signal may be mathematically modeled to account for both the contribution of the light reflected from the pad and the light reflected from the surrounding material.
- Fig. 1 shows an example of a measurement of a measurement pad comparable in size to the optical spot being used to make the measurement.
- Fig. 2 shows an example of the graph of a linescan measurement made according to a method of the present invention.
- Fig. 3 shows a second example of the graph of a linescan measurement made according to a method of the present invention.
- Fig 4 illustrates the influence of surrounding material on a measurement of a measurement pad comparable in size to the optical spot being used to make the measurement
- Fig 5 is a functional diagram of an example of an elhpsometer device that may be used to practice the present invention
- the first aspect of the present invention utilizes a technique where initially one purposefully aims to place the optical spot of the measurement beam a few microns away from the center of the target pad Then a series of measurements are made with each measurement separated by a small stage jog as the optical spot is scanned over the measurement pad The data from these measurements are stored for analysis at the end of the scan Once the scan is complete, these data are analyzed to find the center of the pad
- the surrounding material is the same on both sides of the pad (nearly always the case), one finds that some aspect of the data invariably has either a cup or inverted "U” shape or an inverted cup or "U” shape when viewed as a function of position
- This cup or U-shape simply reflects the fact that the surrounding material is altering the measurement and that the perturbation of the data is a minimum at the center of the pad
- the point of minimum perturbation should correspond to a minimum in the slope of the curve Once this minimum is identified, the position along the wafer corresponding to that data point is selected as representing the center of the pad
- Figs. 2 and 3 illustrate examples of graphs formed by purposefully making a linescan of measurements over the true center of the measurement pad.
- One preferred approach to making such measurements includes the use of the OPTIPROBE detector manufactured and sold by Therma-Wave, Inc. of Fremont, California, assignee herein, and described in part in one or more of the following
- the layer thickness calculations for each measurement point can be made from the reflectometry or ellipsometry data using an appropriate iterative nonlinear least squares optimization technique such as the well-known Marquardt-Levenberg algorithm.
- an appropriate iterative nonlinear least squares optimization technique such as the well-known Marquardt-Levenberg algorithm.
- the reason for resorting to a calculational least squares algorithm is that the Fresnel equations that describe the reflectometric and ellipsometric phenomena being measured are not easily inverted.
- a suitable iterative optimization technique for this purpose is described in "Multiparameter Measurements of Thin Films Using Beam-Profile Reflectivity," Fanton e. al., Journal of Applied Physics, Vol. 73, No. 11. p.7035 (1993) and "Simultaneous Measurement of Six Layers in a Silicon on Insulator Film
- the result for the thin film being measured was a cup or U-shape, indicating that the material surrounding the measurement pad perturbed the apparent film thickness upward in value.
- This upward perturbation reflects the fact that in the Fig. 2 example, the surrounding material was higher than the thin film being measured.
- the 100 micron by 100 micron measurement pad was in the form of a well or depression.
- the point of minimum perturbation appears to occur generally between the position of 2.25 mm and the position of 2.254 mm.
- the result is an inverted U-shape for the graph, indicating that the material surrounding the measurement pad perturbed the data so as to lower the apparent value of the film thickness.
- This downward perturbation reflects the fact that in the Fig. 2 example, the surrounding material was lower than the thin film being measured. In this case, the 100 micron by 100 micron measurement pad was in the form of a plateau or raised surface. In the Fig 3 graph, the point of minimum perturbation appears to fall generally between the position of 2.142 mm and 2.15 mm.
- Tables 1 and 2 The advantages of the present method can be seen from the data compiled in Tables 1 and 2 below.
- the data in Tables 1 and 2 were generated by measuring the thickness of a thin film on a test wafer. The wafer was measured at five points (sites) during each run. The five sites are identified in the Table as "T"(top), “C” (center), “B” (bottom), “L” (left), “R” (right).
- the measurements in Table 1 were made by moving the wafer to each site using a conventional high precision stage and a site correcting pattern recognition system.
- the measurements in Table 2 were taken using the site correcting pattern recognition system in conjunction with the linescan approach described herein. In particular, the wafer was brought to a spot which was thought to be slightly removed from the desired measurement site.
- Measurements were then taken across a 40 micron scan. Data were selected by identifying the minimum perturbation point of each scan. The measurement data of each run of Table 2 were taken immediately after the correspondingly numbered run of Table 1. The 15 different runs were spread out over five days to check repeatability.
- the actual measurements were made using an ABSOLUTE ELLIPSOMETER (TM), part of the measurement system of an OPTI- PROBE 5240, manufactured and sold by Therma-Wave. Details of an absolute ellipsometer using a helium neon laser are described in U.S. Patent No. 5,798,837, incorporated herein by reference in its entirety.
- the helium neon laser generates a probe beam spot size of about 15 by 30 microns. The beam was scanned in the direction of the wider beam diameter, although scanning can be performed along either of two axes.
- the standard deviation (Sigma) for the measurements of each site is shown at the bottom of each Table. Ideally, the thickness measurements at each site would be the same for all the measurements. As can be seen, the average deviation for the measurements using only the site correcting pattern recognition system
- Fig. 5 illustrates a basic form of ellipsometer for evaluating the parameters of a sample 100 in accordance with the present invention. As shown therein, a means, such as laser 60, generates a beam of radiation 70.
- This beam is passed through a polarizing section 80 for creating a known polarization state of the beam.
- the beam is then reflected off the sample at an oblique angle of incidence ⁇ with respect to the normal N as shown.
- the reflected beam is then passed through an analyzing section 110 for isolating the polarization state of the reflected beam.
- the intensity of the beam is then measured by a photodetector 120.
- the mechanical stage 130 is used to scan the center of the desired measurement area across the focus of the beam spot in the manner discusses above in order to make a series of measurements.
- a processor 90 can ultimately be used to determine parameters of the sample 100 by comparing the polarization state of the input beam with the polarization state of the reflected beam.
- the scanning technique of the present invention increases both accuracy and repeatability for measurements made on small pads. For still smaller pad sizes the effects of the surrounding material can sometimes not be ignored. In other words, for such pads, even though the scanning method described above may still yield a good repeatability, the accuracy of the measurement even at the center of the pad would be unacceptable.
- we use a novel method of data analysis that allows us to correct for the effects of the surrounding material in analyzing the data.
- the data collected at the center of the pad is treated as being created by a superposition of light coming from the pad material itself and light coming from the surrounding material.
- the influence of the two materials is weighted by the proportion of the light that reflects off the pad as compared with the light that reflects off the surrounding material. In order to estimate these proportions, it is necessary to have knowledge of the optical spot intensity profile, but the profile is something that can be readily determined for the instrument using standard measurement techniques.
- the beam spot strikes both the pad 50 and surrounding material 60.
- the resulting signal can be treated simply as the superposition of the light signal reflected by the pad region (region 1) and the light signal reflected by the surrounding material (region 2). Determining each separate contribution from the two regions is a matter of describing the reflection of light by a thin film or stack of thin films. This problem has been treated in detail in Optical Properties of Thin Film Solids, O. S. Heavens, Dover edition (1991), pp. 49-92 and Principles of Optics, M. Born and E. Wolf, 6 th (Corrected) edition, pp. 51- 70, each of which is hereby incorporated by reference.
- the intensity of the light at the detector can be determined accordingly based on the optics of the ellipsometric or reflectometric system.
- the incoming light may typically be in the form of a laser beam with a Gaussian profile. Since the electric field must satisfy the Maxwell equation, a well focused Gaussian beam may be expressed as follows:
- a 2 (z) is defined by a 2 + i2z/k 0 and gives a position- dependent radius of the beam.
- sample is divided into two regions, x ⁇ a where the optical reflectivity is and x > a where the optical reflectivity is r 2 .
- x ⁇ a where the optical reflectivity is and x > a where the optical reflectivity is r 2 .
- r 2 the optical reflectivity
- the first integral is the field equation for a uniform sample, while the integration in the second term can be written as
- I(k ) E 0 2k 0 cos ⁇ I dx —
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001523593A JP2003528290A (en) | 1999-09-15 | 2000-09-13 | Spatial averaging techniques for ellipsometry and reflection polarization |
EP00960093A EP1214562A1 (en) | 1999-09-15 | 2000-09-13 | Spatial averaging technique for ellipsometry and reflectometry |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15393299P | 1999-09-15 | 1999-09-15 | |
US60/153,932 | 1999-09-15 | ||
US09/658,812 US6281027B1 (en) | 1999-09-15 | 2000-09-11 | Spatial averaging technique for ellipsometry and reflectometry |
US09/658,812 | 2000-09-11 |
Publications (1)
Publication Number | Publication Date |
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WO2001020254A1 true WO2001020254A1 (en) | 2001-03-22 |
Family
ID=26851003
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2000/025028 WO2001020254A1 (en) | 1999-09-15 | 2000-09-13 | Spatial averaging technique for ellipsometry and reflectometry |
Country Status (4)
Country | Link |
---|---|
US (4) | US6281027B1 (en) |
EP (1) | EP1214562A1 (en) |
JP (1) | JP2003528290A (en) |
WO (1) | WO2001020254A1 (en) |
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US6281027B1 (en) * | 1999-09-15 | 2001-08-28 | Therma-Wave Inc | Spatial averaging technique for ellipsometry and reflectometry |
US7049633B2 (en) * | 1999-12-10 | 2006-05-23 | Tokyo Electron Limited | Method of measuring meso-scale structures on wafers |
US6340602B1 (en) * | 1999-12-10 | 2002-01-22 | Sensys Instruments | Method of measuring meso-scale structures on wafers |
US6889162B1 (en) * | 2000-03-07 | 2005-05-03 | Koninklijke Philips Electronics N.V. | Wafer target design and method for determining centroid of wafer target |
US6812047B1 (en) | 2000-03-08 | 2004-11-02 | Boxer Cross, Inc. | Evaluating a geometric or material property of a multilayered structure |
US6911349B2 (en) * | 2001-02-16 | 2005-06-28 | Boxer Cross Inc. | Evaluating sidewall coverage in a semiconductor wafer |
US6672947B2 (en) * | 2001-03-13 | 2004-01-06 | Nptest, Llc | Method for global die thinning and polishing of flip-chip packaged integrated circuits |
JP4212255B2 (en) * | 2001-03-30 | 2009-01-21 | 株式会社東芝 | Semiconductor package |
US6940592B2 (en) * | 2001-10-09 | 2005-09-06 | Applied Materials, Inc. | Calibration as well as measurement on the same workpiece during fabrication |
US6778268B1 (en) * | 2001-10-09 | 2004-08-17 | Advanced Micro Devices, Sinc. | System and method for process monitoring of polysilicon etch |
US6898596B2 (en) * | 2001-10-23 | 2005-05-24 | Therma-Wave, Inc. | Evolution of library data sets |
US6971791B2 (en) * | 2002-03-01 | 2005-12-06 | Boxer Cross, Inc | Identifying defects in a conductive structure of a wafer, based on heat transfer therethrough |
US6958814B2 (en) * | 2002-03-01 | 2005-10-25 | Applied Materials, Inc. | Apparatus and method for measuring a property of a layer in a multilayered structure |
US7535913B2 (en) * | 2002-03-06 | 2009-05-19 | Nvidia Corporation | Gigabit ethernet adapter supporting the iSCSI and IPSEC protocols |
TWI273217B (en) * | 2002-04-17 | 2007-02-11 | Accent Optical Tech Inc | Scatterometric measurement of undercut multi-layer diffracting structures |
US6963393B2 (en) * | 2002-09-23 | 2005-11-08 | Applied Materials, Inc. | Measurement of lateral diffusion of diffused layers |
US6878559B2 (en) * | 2002-09-23 | 2005-04-12 | Applied Materials, Inc. | Measurement of lateral diffusion of diffused layers |
WO2005030855A2 (en) * | 2003-10-01 | 2005-04-07 | Ciba Specialty Chemicals Holding Inc. | Additive mixtures |
US7355709B1 (en) | 2004-02-23 | 2008-04-08 | Kla-Tencor Technologies Corp. | Methods and systems for optical and non-optical measurements of a substrate |
US7026175B2 (en) * | 2004-03-29 | 2006-04-11 | Applied Materials, Inc. | High throughput measurement of via defects in interconnects |
US20050282350A1 (en) * | 2004-06-22 | 2005-12-22 | You-Hua Chou | Atomic layer deposition for filling a gap between devices |
US7379185B2 (en) | 2004-11-01 | 2008-05-27 | Applied Materials, Inc. | Evaluation of openings in a dielectric layer |
US8760649B1 (en) | 2008-01-28 | 2014-06-24 | Kla-Tencor Corporation | Model-based metrology using tesselation-based discretization |
NL1036468A1 (en) | 2008-02-27 | 2009-08-31 | Asml Netherlands Bv | Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method. |
WO2011113007A2 (en) | 2010-03-12 | 2011-09-15 | Board Of Regents Of The University Of Texas System | Modification of a flow cell to measure adsorption kinetics under stagnation point flow and development of a setup correction procedure for obtaining adsorption kinetics at the stagnation point |
JP2012047654A (en) * | 2010-08-30 | 2012-03-08 | Hitachi High-Technologies Corp | Defect inspection device and defect inspection method |
EP2703772B1 (en) * | 2012-08-28 | 2015-05-20 | Texmag GmbH Vertriebsgesellschaft | Sensor for detecting a moving strip |
CN107917665B (en) * | 2016-10-09 | 2020-02-11 | 睿励科学仪器(上海)有限公司 | Method and apparatus for determining the position of a light spot |
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2000
- 2000-09-11 US US09/658,812 patent/US6281027B1/en not_active Expired - Lifetime
- 2000-09-13 WO PCT/US2000/025028 patent/WO2001020254A1/en not_active Application Discontinuation
- 2000-09-13 JP JP2001523593A patent/JP2003528290A/en not_active Withdrawn
- 2000-09-13 EP EP00960093A patent/EP1214562A1/en not_active Withdrawn
-
2001
- 2001-05-31 US US09/871,220 patent/US6577384B2/en not_active Expired - Lifetime
- 2001-10-09 US US09/973,130 patent/US6509199B2/en not_active Expired - Lifetime
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2003
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Also Published As
Publication number | Publication date |
---|---|
US6509199B2 (en) | 2003-01-21 |
US6281027B1 (en) | 2001-08-28 |
US20020045284A1 (en) | 2002-04-18 |
US6577384B2 (en) | 2003-06-10 |
US6856385B2 (en) | 2005-02-15 |
EP1214562A1 (en) | 2002-06-19 |
US20020012123A1 (en) | 2002-01-31 |
US20030214654A1 (en) | 2003-11-20 |
JP2003528290A (en) | 2003-09-24 |
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