WO2001018603A3 - Polymer for chemically amplified resist and a resist composition using the same - Google Patents

Polymer for chemically amplified resist and a resist composition using the same Download PDF

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Publication number
WO2001018603A3
WO2001018603A3 PCT/KR2000/000956 KR0000956W WO0118603A3 WO 2001018603 A3 WO2001018603 A3 WO 2001018603A3 KR 0000956 W KR0000956 W KR 0000956W WO 0118603 A3 WO0118603 A3 WO 0118603A3
Authority
WO
WIPO (PCT)
Prior art keywords
same
polymer
chemically amplified
resist composition
resist
Prior art date
Application number
PCT/KR2000/000956
Other languages
French (fr)
Other versions
WO2001018603A2 (en
Inventor
Deog-Bae Kim
Hyun-Jin Kim
Yong-Joon Choi
Yoon-Sik Chung
Original Assignee
Dongjin Semichem Co Ltd
Kim Deog Bae
Kim Hyun Jin
Choi Yong Joon
Chung Yoon Sik
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dongjin Semichem Co Ltd, Kim Deog Bae, Kim Hyun Jin, Choi Yong Joon, Chung Yoon Sik filed Critical Dongjin Semichem Co Ltd
Priority to JP2001522137A priority Critical patent/JP4293749B2/en
Priority to US10/070,477 priority patent/US6767687B1/en
Priority to AU67378/00A priority patent/AU6737800A/en
Publication of WO2001018603A2 publication Critical patent/WO2001018603A2/en
Publication of WO2001018603A3 publication Critical patent/WO2001018603A3/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/115—Cationic or anionic

Abstract

The present invention relates to a polymer for a chemically amplified resist and a resist composition using the same. The present invention provides a polymer represented by the formula (1) and a chemically resist composition for extreme ultraviolet light comprising the same. The chemically amplified resist composition comprising the polymer represented by the formula (1) of the present invention responds to mono wavelength in a micro-lithography process and can embody a micro-pattern of high resolution on a substrate.
PCT/KR2000/000956 1999-09-07 2000-08-25 Polymer for chemically amplified resist and a resist composition using the same WO2001018603A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2001522137A JP4293749B2 (en) 1999-09-07 2000-08-25 Polymer for chemically amplified resist and resist composition using the same
US10/070,477 US6767687B1 (en) 1999-09-07 2000-08-25 Polymer for chemically amplified resist and a resist composition using the same
AU67378/00A AU6737800A (en) 1999-09-07 2000-08-25 Polymer for chemically amplified resist and a resist composition using the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1019990037772A KR100308423B1 (en) 1999-09-07 1999-09-07 Polymer for chemically amplified resist and resists using this polymer
KR1999/37772 1999-09-07

Publications (2)

Publication Number Publication Date
WO2001018603A2 WO2001018603A2 (en) 2001-03-15
WO2001018603A3 true WO2001018603A3 (en) 2001-09-20

Family

ID=19610306

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2000/000956 WO2001018603A2 (en) 1999-09-07 2000-08-25 Polymer for chemically amplified resist and a resist composition using the same

Country Status (7)

Country Link
US (1) US6767687B1 (en)
JP (1) JP4293749B2 (en)
KR (1) KR100308423B1 (en)
CN (1) CN1162753C (en)
AU (1) AU6737800A (en)
TW (1) TW554243B (en)
WO (1) WO2001018603A2 (en)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100604802B1 (en) * 2000-03-07 2006-07-26 삼성전자주식회사 Photosensitive polymer having naphthalene derivative in its backbone and resist composition comprising the same
KR100474098B1 (en) * 2001-09-12 2005-03-07 주식회사 덕성 Thinner composition for rinsing photoresist
KR20050115172A (en) * 2004-06-03 2005-12-07 주식회사 동진쎄미켐 Photosensitive polymer and chemically amplified photoresist composition including the same
JP4789599B2 (en) * 2004-12-06 2011-10-12 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． Photoresist composition
KR101104628B1 (en) 2004-12-10 2012-01-12 주식회사 동진쎄미켐 Polymer for electron beam lithography and chemically amplified positive resist composition including the same
KR101184205B1 (en) 2005-04-12 2012-09-19 주식회사 동진쎄미켐 Photo-sensitive compound, photo-sensitive polymer and chemically amplified photoresist composition including the same
JP2009507116A (en) * 2005-09-07 2009-02-19 チバ ホールディング インコーポレーテッド Degradable polymer article
KR101348607B1 (en) * 2006-02-14 2014-01-07 주식회사 동진쎄미켐 Photoresist composition, thin film patterning method using the same, and method of fabricating liquid crystal display using the same
CN102471410B (en) * 2009-08-04 2015-04-08 日本曹达株式会社 High-molecular-weight copolymer
JP2015152669A (en) * 2014-02-12 2015-08-24 サンアプロ株式会社 Photoacid generator and resin composition for photolithography
KR102432661B1 (en) 2015-07-07 2022-08-17 삼성전자주식회사 Photoresist composition for extreme ultraviolet and method of forming photoresist pattern using the same
CN105669889B (en) * 2016-01-28 2018-11-16 北京师范大学 Styrene derivative-methacrylate copolymer, its preparation and its application of acid groups are produced containing light
JP6720926B2 (en) * 2016-06-28 2020-07-08 信越化学工業株式会社 Resist material and pattern forming method
WO2022070997A1 (en) * 2020-09-29 2022-04-07 富士フイルム株式会社 Active ray sensitive or radiation sensitive resin composition, resist film, pattern forming method, and electronic device manufacturing method

Citations (9)

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JPH05113667A (en) * 1991-10-23 1993-05-07 Mitsubishi Electric Corp Pattern forming material
US5443690A (en) * 1993-05-12 1995-08-22 Fujitsu Limited Pattern formation material and pattern formation method
US5492793A (en) * 1992-11-03 1996-02-20 International Business Machines Corporation Photoresist composition
US5556734A (en) * 1993-12-24 1996-09-17 Japan Synthetic Rubber Co., Ltd. Radiation sensitive resin composition comprising copolymer of isopropenylphenol and T-butyl(meth)acrylate
EP0786701A1 (en) * 1994-10-13 1997-07-30 Nippon Zeon Co., Ltd. Resist composition
EP0793144A2 (en) * 1996-03-01 1997-09-03 Japan Synthetic Rubber Co., Ltd. Radiation sensitive composition
US5679495A (en) * 1993-12-03 1997-10-21 Japan Synthetic Rubber Co., Ltd. Radiation sensitive resin composition
US5773191A (en) * 1995-07-26 1998-06-30 Hoechst Japan Limited Radiation-sensitive composition
EP0877294A1 (en) * 1996-01-26 1998-11-11 Nippon Zeon Co., Ltd. Resist composition

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US4491628A (en) 1982-08-23 1985-01-01 International Business Machines Corporation Positive- and negative-working resist compositions with acid generating photoinitiator and polymer with acid labile groups pendant from polymer backbone
US5310619A (en) 1986-06-13 1994-05-10 Microsi, Inc. Resist compositions comprising a phenolic resin, an acid forming onium salt and a tert-butyl ester or tert-butyl carbonate which is acid-cleavable
JPH02227660A (en) 1989-02-28 1990-09-10 Sony Corp Chemical material detecting device by surface acoustic wave delay line
EP0523957A1 (en) 1991-07-17 1993-01-20 Japan Synthetic Rubber Co., Ltd. Radiation-sensitive composition
JP3010607B2 (en) 1992-02-25 2000-02-21 ジェイエスアール株式会社 Radiation-sensitive resin composition
DE69628996T2 (en) * 1995-12-21 2004-04-22 Wako Pure Chemical Industries, Ltd. Polymer composition and material for the resist
KR100252062B1 (en) * 1998-04-20 2000-06-01 윤종용 Polymer mixture for use in photoresist, photoresist composition having thereof and preparation method thereof
KR100252061B1 (en) * 1998-04-20 2000-06-01 윤종용 Polymer for use in photoresist, photoresist composition having thereof and preparation method thereof
KR100287175B1 (en) * 1998-05-20 2001-09-22 윤종용 Dissolution inhibitor of chemically amplified photoresist and chemically amplified photoresist composition comprising the inhibitor
KR100320773B1 (en) * 1999-05-31 2002-01-17 윤종용 photoresist compositions
KR100553263B1 (en) * 2000-04-14 2006-02-20 주식회사 동진쎄미켐 Polymer for chemically amplified resist and resists using this polymer

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05113667A (en) * 1991-10-23 1993-05-07 Mitsubishi Electric Corp Pattern forming material
US5492793A (en) * 1992-11-03 1996-02-20 International Business Machines Corporation Photoresist composition
US5443690A (en) * 1993-05-12 1995-08-22 Fujitsu Limited Pattern formation material and pattern formation method
US5679495A (en) * 1993-12-03 1997-10-21 Japan Synthetic Rubber Co., Ltd. Radiation sensitive resin composition
US5556734A (en) * 1993-12-24 1996-09-17 Japan Synthetic Rubber Co., Ltd. Radiation sensitive resin composition comprising copolymer of isopropenylphenol and T-butyl(meth)acrylate
EP0786701A1 (en) * 1994-10-13 1997-07-30 Nippon Zeon Co., Ltd. Resist composition
US5773191A (en) * 1995-07-26 1998-06-30 Hoechst Japan Limited Radiation-sensitive composition
EP0877294A1 (en) * 1996-01-26 1998-11-11 Nippon Zeon Co., Ltd. Resist composition
EP0793144A2 (en) * 1996-03-01 1997-09-03 Japan Synthetic Rubber Co., Ltd. Radiation sensitive composition

Also Published As

Publication number Publication date
KR20010026449A (en) 2001-04-06
CN1162753C (en) 2004-08-18
US6767687B1 (en) 2004-07-27
JP2003508596A (en) 2003-03-04
AU6737800A (en) 2001-04-10
JP4293749B2 (en) 2009-07-08
TW554243B (en) 2003-09-21
WO2001018603A2 (en) 2001-03-15
KR100308423B1 (en) 2001-09-26
CN1378661A (en) 2002-11-06

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