WO2001018603A2

WO2001018603A2 - Polymer for chemically amplified resist and a resist composition using the same

Info

Publication number: WO2001018603A2
Application number: PCT/KR2000/000956
Authority: WO
Inventors: Deog-Bae Kim; Hyun-Jin Kim; Yong-Joon Choi; Yoon-Sik Chung
Original assignee: Dongjin Semichem Co., Ltd.
Priority date: 1999-09-07
Filing date: 2000-08-25
Publication date: 2001-03-15
Also published as: KR20010026449A; CN1162753C; US6767687B1; WO2001018603A3; JP2003508596A; AU6737800A; JP4293749B2; TW554243B; KR100308423B1; CN1378661A

Abstract

The present invention relates to a polymer for a chemically amplified resist and a resist composition using the same. The present invention provides a polymer represented by the formula (1) and a chemically resist composition for extreme ultraviolet light comprising the same. The chemically amplified resist composition comprising the polymer represented by the formula (1) of the present invention responds to mono wavelength in a micro-lithography process and can embody a micro-pattern of high resolution on a substrate.

Description

POLYMER FOR CHEMICALLY AMPLIFIED RESIST AND A RESIST COMPOSITION USING THE SAME

BACKGROUND OF THE INVENTION

(a) Field of the Invention

The present invention relates to a polymer for a chemically amplified

resist and a resist composition comprising the same More particularly, the

present invention relates to a novel polymer that can be used for a

chemically amplified resist composition that can form finer patterns on a substrate in a micro-lithography process suitable for micro-processing of semiconductors, using a mono wavelength as the light source for light

exposure, and which improves post exposure delay (PED) stability and has high resistance against the heat produced by dry etching, and a resist

composition using the same

(b) Description of the Related Art

The resist composition is generally used in the preparations of large

size integrated circuits (LSI) or in high resolution lithography Recently,

resist compositions with high resolution and high sensitivity have been

required due to the densification of large size integrated circuits Such

embodiments of microcircuits in semiconductor integrated circuits generally

proceed using a lithography process through which process the microcircuit

is constructed by coating resist on a substrate, transcribing patterns on the

substrate using a prepared photo mask and etching the substrate along the transcribed pattern

Such lithography processes comprise the following steps (a) a

coating step comprising uniformly coating resist on the surface of a substrate,

(b) a soft baking step comprising evaporating the solvent from the coated

resist film to adhere the resist film to the surface of the substrate, (c) a light

exposure step comprising light exposing the substrate while projecting the

circuit pattern on the mask, repeatedly and sequentially using a light source

such as ultraviolet light to transcribe the pattern of the mask onto the substrate, (d) a development step comprising selectively removing the part in

which chemical properties such as solubility change by the exposure to the light source using development liquid, (e) a hard baking step for adhering more firmly the resist film that remains on the substrate after development, (f) an etching step comprising etching the predetermined part along the pattern on the developed substrate in order to impart the electric properties

and (g) a stripping step comprising removing the resist that becomes unnecessary after said etching step

The speed of high-integration of semiconductor integrated circuits

has increased 4-fold for 3 years Thus, at present, in the field of dynamic

random access memory (DRAM), 64 mega bit DRAM and 256 mega bit

DRAM are mass-produced, and the development of giga bit DRAM has

started

The conventional 16 mega DRAM used the technology of a 0 5 //in

circuit line, while 64 mega DRAM uses the technology of a circuit line of 0 3 μm or less, and 256 mega DRAM and giga DRAM requires an ultra micro

pattern of less than quarter micro, such as 0 20 μm, 0 18

0 15 μ

depending on the design In such micro-processing, the light-radiation

wavelength moves to extreme ultraviolet Therefore, there is a need for the

development of a new resist that can effectively respond to extreme

ultraviolet light

The resist of the prior art comprising quinonediazide photoactive

material and phenol novolac resin cannot satisfy the above-mentioned requirement, because, in such a resist system, there is a large absorption at

the wavelength zone of 300 nm or less and thus, when mono wavelength light-exposure of 300 nm or less is conducted, pattern profile is significantly deteriorated Therefore, there is a need for the embodiment of a stiff pattern in which the pattern profile does not flow

In order to embody such a pattern profile, an aligner commonly

called a stepper is generally used as a light-exposing apparatus Such

light-exposing apparatuses are divided into an apparatus using G line

(wavelength 436 nm), I line (wavelength 365 nm) of mercury light, and an

apparatus using an excimer laser of mono wavelength KrF (248 nm) and ArF

(193 nm) according to the light source For embodying micro-patterns on

the substrate, the resolution value should be small The resolution value is

expressed by the following Rayleigh diffraction limiting equation

Theoretically since the resolution value becomes smaller as the wavelength

of the light source becomes shorter it is preferable to use a shorter mono wavelength

[Diffraction limiting equation]

R = K \ /NA

Wherein, K IS a constant, λ is a wavelength of the light used, and

NA is the number of the aperture of the lense.

In order to achieve high resolution of a quarter micron or less, the

capacity of degradation of lithography should be improved For this

purpose, it is effective to use a mono wavelength light source having a short wavelength and to increase the aperture number (NA) of the optical lense of the exposing apparatus

Accordingly, a resist composition that uses a high-output excimer

laser light source so as to respond to the high-resolution tendency of semiconductor integrated circuits is commonly used This composition is for a KrF and an ArF excimer laser, and high-sensitivity resist systems introducing the chemical amplification concept are suggested

A chemically amplified resist produces acid by photolysis due to the

irradiation of extreme ultraviolet light The produced acid degrades the

protective group which is partially protected with the aid of heat, and then

it reacts with the acid labile polymer to initiate the chain reaction or act as

a catalyst, and thus, one molecule of acid causes a number of bond

formation or bond degradation reactions Therefore, a term "chemical

amplification' means the phenomenon whereby active species produced

by the action of one photon causes chemical chain reactions to rapidly amplify the yield of quantum Due to this continuous reaction of acid, the

concept of chemical amplification was introduced and used

A chemically amplified resist is divided into a two-component

system comprising an acid-labile polymer and a mineral acid producing

agent and a three-component system comprising an acid-labile polymer, a

mineral acid producing agent and a matrix resin In the resist of the prior

art, the degradation or the cross-reaction of a light sensitive material

occurs directly at the light exposure part, and, when it is developed, a resist image pattern of a positive or negative form is obtained However,

in the chemically amplified resist, an acid labile polymer or compound is not directly reacted by light exposure, but an acid is produced from the mineral acid producing agent in the light-exposed part, and only a latent image is produced The produced acid acts as a catalyst for the acid labile polymer in the post-exposure bake (PEB) step, and thus, it causes

the amplification of the reaction and the significant difference in solubility

The first resist based upon the chemical amplification concept was a

resist using a polyhydroxystyrene derivative poly[p-(t- butyloxycarbonyloxy)styrene] (PBOCSt) blocked with t-BOC (tertiary-

butoxy carbonyl) group and onium salt as a mineral acid producing agent,

and it is described in American Chemical Society, "Polymers in

Electronics", ACS Sym Series, No 242, by Ito et al The reason for

using the polyhydroxystyrene derivative is as follows since the novolac

phenol resin that was used in the resist of the prior art largely absorbs deep UV, UV light cannot sufficiently reach the contact surface of the

resist substrate Thus, in the light-exposed part of the resist, chemical

changes by light-exposure do not sufficiently occur in the membrane

thickness direction, and thus the solubility of the developing liquid

becomes irregular This makes the shape of the section of the resist

pattern formed after development triangular Thus, when the obtained

resist pattern is used as an inner etching mask for a substrate, the micro- circuit pattern to be aimed cannot be transcribed In order to compensate

for this, there is a need to change the base polymer, and a polyhydroxystyrene derivative having excellent plasma resistance is known to be suitable

As examples, a chemically amplified resist comprising poly(p- styreneoxytetrahydropyranol) and an acid producing agent is known by

Ueno et al in the 36^th Japanese Applied Physics Society announcement, 1 p-k-7, 1989, and a three component system resist comprising novolac

phenol resin, bisphenol-A substituted with t-BOC group and pyrogallol

methanesulfonic ester is known from Schlegel in the 37^th Japanese

Applied Physics Society announcement, 28p-ZE-4, 1990 In addition,

technologies relating to the preparations of said resists are disclosed in JP

patent publication Hei 2-27660, JP patent publication Hei 5-232706, JP

patent pubication Hei 5-249683, and US patent Nos 4,491 ,628 and

5,310,619 However, while such chemically amplified resists have

excellent resolutions compared to the resist for g-line and l-line of the prior art, they are likely to be affected by the surrounding environment,

particularly by oxygen, moisture and other trace ingredients around the

membrane surface, and it is difficult to form stable micro patterns because

a trace amount of acid is produced in the light-exposed part

In addition, MacDonald et al reported in Pore SPIE, Vol 1466 1991

that trace dimethylaniline contained in the air decreases the activity of the

acid produced around the surface of the resist by light exposure, and it

produces a layer that hardly melts on the membrane surface, and said

hardly-melting layer remains on the surface of the resist pattern after development treatment However, this process has the problem that footing is caused by the reaction of the micro pattern with the substrate due to the time delay from the light exposure to the PEB process, and a T- top type pattern is produced by environmental pollution due to the amine ingredient distributed in the air in the process line Therefore, there is a

need for compensating the PED stability of the resist composition using

said compound, and there is a need for a resist composition using a novel

base polymer suitable to embody high sensitivity and high resolution at a

wavelength of 300 μm or less

In addition, recently, large size integrated circuit tends to use a dry

etching process Said dry process is for increasing integration of

semiconductor integrated circuit, and changes the manner of etching on

the substrate in the lithography process from wet etching having large side

etching of the prior art to dry etching having small side etching In the dry etching process, the resist pattern should not change by the heat

produced when etching In addition, as the degree of integration

increases, higher heat resistance is required by the resist used

SUMMARY OF THE INVENTION

Accordingly, it is an object of the present invention to provide a novel

polymer that can be applied to a chemically amplified resist composition that

can form finer patterns on a substrate in a micro lithography process using extreme ultraviolet light, improves post exposure delay stability, and has

high resistance against the heat produced by dry etching, and a resist composition using the same

In order to achieve the above object, the present invention provides a polymer for a chemically amplified resist represented by the following

Formula 1

[Formula 1 ]

Wherein, Ri is hydrogen or methyl R₂ is hydrogen or CH₂CH₂COOC(CH₃)₃, R₃ is chloro, bromo, hydroxy, cyano, t-butoxy, CH₂NH₂, CONH₂, CH=NH, CH(OH)NH₂ or C(OH)=NH,

x + y + z = 1 , x is 0 1 - 0 9, y is 0 01 - 0 89, z is 0 01 - 0 89, and n is 1 or 2, and when n is 2, both R₂ are the same

In addition, the present invention provides a resist composition

comprising (a) a polymer represented by the formula 1 , (b) an acid producing

agent and (c) an organic solvent

DETAILED DESCRIPTION AND THE PREFERRED EMBODIMENTS

The present invention will now be explained in more detail In order to synthesize a polymer capable of being alkali developed represented by the formula 1 , three monomers constituting a polymer are

prepared and they are introduced in a reactor equipped with a reflux cooler under a nitrogen environment and are reacted Tetrahydrofuran (THF), toluene, benzene, chloroform, carbon tetrachloπde, etc can be used as a polymerization solvent Azobisisobutyronitnle (AIBN) or benzoperoxide

(BPO) can be used as a polymerization initiator Said polymerization solvent and initiator are added to the reactor and reacted while being stirred

After the reaction completes, the synthesized polymer is precipitated in

hexane to obtain precipitates, and then the precipitates rinsed several times

and vacuum dried to obtain the polymer

For synthesizing the monomer having a Z repeat unit of the

compound of Formula 1 , the synthesis of cyanoalkylstyrene by way of

Equation 1 should be preceded To the synthesized 4-cyanoalkylstyrene, t- butyl acrylate and t-butyl methacrylate groups are added, and the prepared

monomers are stirred with other monomers such as acetoxystyrene, t-

butylacrylate, and t-butyl methacrylate to prepare the polymer

The process for synthesizing the monomer having a Z repeat unit

comprises two steps First, group I cyanide comprising sodium cyanide and

potassium cyanide is mixed with alkyl alcohol comprising water and ethanol,

as shown in Equation 1 To said solution, alkyl styrene comprising 4- chloroalkylstyrene and halogen atoms is slowly introduced and is reacted to

synthesize cyanoalkylstyrene Then, the monomer obtained in Equation 1 is stirred with t-butylacrylate to synthesize 4-(3-cyano-dι-1 ,5-t- butoxycarbonyl-pentyl)styrene (CBCPS) as shown in Equation 2 Wherein,

cyanoalkylstyrene and tπton non-solution or tetraalkylaminehydroxide solution are dissolved in dioxane, and then, t-butylacrylate is introduced and stirred After the reaction completes, said mixture is neutralized with an acidic solution and is extracted to synthesize CBCPS

For the synthesis of the polymer of the present invention, THF,

toluene, benzene, chloroform or carbon tetrachloπde can be used as

polymerization solvent 4-acetoxystyrene or 4-butoxystyrene is added to

the prepared CPCBS with 4-butylacrylate or 4-butylmethacrylate and the

polymerization initiator such as AIBN and BPO is added and the mixture is

stirred to prepare a polymer Said polymer has a weight average molecular

weight (Mw) of 3,000 - 30,000, and the degree of dispersion can be

controlled from 1 01 to 3 00 depending on the synthetic process The substitute monomer used in the present invention exhibits

sufficient development inhibiting capacity at the non-light-exposed part, and

the substitute group is degraded by the action of acid and is dissolved in

developing liquid at the light-exposed part

The resist composition using the polymer of the present invention

comprises (a) a polymer represented by the formula 1 , (b) an acid producing

agent and (c) an organic solvent

The resist composition using the polymer of the present invention preferably comprises 1 - 50 wt% of said polymer

As the acid producing agent, sulfonium salt, an onium salt such as lodonium, N-iminosulfonate, disulfone, bisarylsulfonyldiazomethane and arylcarbonylarylsulfonyldiazomethane can be used Preferably, the acid

producing agent is contained in the resist composition in an amount of 0 1 to

50 wt% The examples of sulfonium salt include the following compounds but

are not limited to them

The examples of onium salt include the following compounds

The examples of N-immosulfonates include the following compounds

The examples of disulfones include the following compound

(Wherein R is H, -CH₃ or -C(CH₃)₃ )

The examples of bisarylsulfonyldiazomethanes include the following

compound

(Wherein R is H, -CH₃ or -C(CH₃)₃ )

The examples of arylcarbonylarylsulfonyldiazomethanes include the

following compound

(Wherein R is H, -CH₃ or -C(CH₃)₃ )

The organic solvent is preferably selected from the group consisting

of ethyleneglycol monoethylether acetate, propyleneglycol monomethylether

acetate ethylether acetate n-butyl acetate, methyl isobutyl ketone ethyl lactate, 3-ethoxy-ethylpropιonate, 3-methoxy-methylpropιonate, diglycol

monoethylether, 2-heptanone, diacetone alcohol, β - methoxyisobutyπc acid

methylester, propyleneglycol monoethylether, propyleneglycol

monomethylpropionate, methyl lactate, butyl lactate, ethyl pyruvate, y -

butyrol lactone, and a mixture thereof Preferably, the organic solvent is

contained in the resist composition in an amount of 0 1 to 99 wt%

The resist composition using the polymer of the present invention

may comprise a dissolution inhibitor in order to improve the dissolution

inhibition of the non-light-exposed part The use of the dissolution inhibitor makes the difference of solubility of the light-exposed part and non-light- exposed part larger and contributes to the improvement of contrast Such dissolution inhibiting additives can be added in the resist composition in an amount of 0 1 to 50 wt% based on the weight of the polymer of the present

invention The examples of the dissolution inhibitor include the following compounds but are not limited to them

OR

(Wherein R is a molecule comprising C₁-C₁0 and H and 0)

The resist composition using the polymer of the present invention

can be applied as follows to obtain a micro-pattern

When the resist composition using the polymer of the present

invention is formed as a thin layer on a substrate such as a si cone wafer

and is treated with a base aqueous solution, the dissolution does not occur

because the solubility of the copolymer is low However, when extreme

ultraviolet light is radiated, the resist responds and the acid producing agent

in the resist produces acid, and the development inhibiting substituent

causes the degradation of the polymer structure by the action of heat

addition in the light-exposed part and the acid is produced again

Consequently, one acid that was produced causes chemical amplification

which causes a plurality of acid active degradation As a result, the

solubility of the polymer largely increases in the light-exposed part, and,

when developing with the base aqueous solution the difference in the

solubilities of the light exposed part and non-exposed part appears Thus,

a resist composition having excellent resolution compared to the resist

composition using G-rays and l-rays of the prior art can be obtained

The present invention will be explained in more detail with reference

to the following Examples and Comparative Examples However these are to illustrate the present invention, and the present invention is not limited to

them

[The synthesis of polymer]

The synthesis of 4-cvanomethylstyrene(CvMS)

In a 500 μl 4-openιng flask equipped with a stirring bar, 49 01 g of

sodium cyanide was mixed with 70 07 g of water and 50 96 g of ethanol

Then, the temperature of the flask was elevated to 60 ^°C and the sodium

cyanide was completely dissolved To said solution, 87 50 g of 4-

chloromethylstyrene was slowly added and it was reacted for 3 hours while

stirring and maintaining the reaction temperature within 60 - 70 ^°C When

the reaction terminated, said solution was cooled to 40 °C , and 100 g of

diethylether was added and the diethylether layer was separated The

separated organic layer was extracted with 300 g of water three times, and

the water layer was extracted with 50 g of diethylether and was combined

with said organic layer The separated obtained organic layer was dried

with magnesium sulfate for one day, and then the organic solvent was

removed using an evaporator to obtain the product 4-cyanomethylstyrene

The yield of the product was 80%, and the product was a deep purple color

Said synthesis was according to the Equation 1

[Equation 1 ]

N The synthesis of 4-(3-cyano-dι-1 ,5-t-butoxycarbonyl-pentyl)styrene

(CBCPS)

In a 500 mC 4-openιng flask equipped with a stirring bar, 57 28 g of

4-cyanomethylstyrene prepared in the above process and 1 4 g of tπton non

solution were dissolved in 40 g of dioxane 102 54 g of t-butylacrylate were

slowly added to said solution for 30 minutes while maintaining the

temperature of the reactor at 60 "C , and it was reacted for 24 hours while

stirring After the reaction, the reactant was neutralized with a chloride

solution, and the neutralized reactant was extracted with 100 g of diethylether and 300 g of water three times, the water layer was extracted with 50 g of diethylether and combined with the organic layer The separated obtained organic layer was dried with magnesium sulfate for one

day, and then the organic solvent was removed using an evaporator The obtained product was distillated under reduced pressure to remove unreacted material, and it was recrystallized with methanol to obtain light

yellow CBCPS in a 60% yield

Said synthesis was according to the Equation 2

[Equation 2]

The synthesis of the polymer of Formula 1 In a 500 mC 4-openιng flask equipped with a temperature controlling

apparatus and a nitrogen introducing apparatus, 300 m(_ of THF were

introduced and nitrogen was added and it was stirred for 30 minutes To

said reactor, 56 62 g of 4-acetoxystyrene, 9 16 g of t-butylacrylate and 24 14

g of CBCPS prepared in the above process were introduced, 1 21 g of AIBN

were added and stirred for 30 minutes under a nitrogen atmosphere while

maintaining the temperature at 40 ^°C , and the temperature of the reactor

was then elevated and the reactant was stirred for 24 hours while refluxing

After the completion of the reaction, the temperature was lowered to room

temperature and the reactant was deposited in 3 liters of hexane to obtain

the precipitates The obtained precipitates were filtered and rinsed with 2

liters of hexane several times and were vacuum dried The dried

macromolecule was dissolved in 300 mi of methanol in a flask, and 50 ml

of 30% NH₄OH aqueous solution were added and the mixture was slowly

stirred, and, after the polymer was completely dissolved, the mixture was

additionally stirred for 30 minutes The solution was deposited in 1 5 liters

of water to obtain the precipitates, and the precipitate were filtered and

rinsed with 2 liters of pure water and vacuum dried to obtain 58 23 g of

polymer of Formula 1

The above synthesis was according to Equation 3

[Equation 3]

[Examples 1 -7]

A chemically amplified resist composition

A chemically amplified resist composition was obtained by using the polymer prepared in the above process represented by Formula 1 , the

compounds represented by Formulae 2 to 6 as acid producing agents, and propyleneglycolmonomethyletheracetate (PGMEA) and ethyl lactate (EL) as

solvents in the ratios of Table 1.

[Formula 2]

[Formula 3]

[Formula 4]

[Formula 5]

[Formula 6]

Said chemically amplified resist composition was spin coated on

silicone wafers at 2000 rpm and was heated to 100 ^°C for 90 seconds to form thin layers with thicknesses' as described in Table 1 Micro-pattern

masks were mounted on said thin layers, mono wavelengths of 248 nm were

radiated, and said layers were heated to 1 10 ^°C for 90 seconds to cause the

chemical amplification Then, said layers were developed with a

tetramethylammoniumhydroxide aqueous solution for 60 seconds, and then

were rinsed with pure water and dried to embody micro-patterns on wafers

The relative sensitivities and resolutions of micro-patterns are

described in Table 1

[Comparative Examples 1 -4]

Chemically amplified resist compositions were prepared by using

polyhydroxystyrene blocked with t-BOC(tertιary-butoxy carbonyl) group

represented by the formula 7 and EVE (ethyl vinyl ether) represented by the

formula 8 as polymers, the compounds represented by the formulae 2-6 as

acid producing agents, and

propyleneglycolmonomethyletheracetate(PGMEA) and ethyllactate(EL) as

solvents, in the ratios of Table 1 Said compositions were spin coated on

silicone wafers and were heated to form thin layers, and were chemically

amplified to embody micro-patterns, in the same manner as described in the

Examples 1 to 7

The relative sensitivities and resolutions of the micro-patterns are

described in Table 1

[Formula 7]

2~>

[Formula 8]

[Table 1]

* The relative sensitivity in Table 1 means optimum energy (Eop)

As shown in Table 1 , the resist compositions prepared in Examples

1 to 7 of the present invention have resolutions of 0 16 to 0 20 μm which is

much excellent compared to the resolutions of 0 24 to 0 30 μ of the

compositions prepared in Comparative Examples 1 to 4 In addition, the

relative sensitivities of the compositions of Examples are 28 to 30 mj/cm², which are excellent compared to the relative sensitivities of 35 to 45 mj/cm²

of the compositions of Comparative Examples

The chemically amplified resist composition comprising the polymer represented by the Formula 1 can rapidly respond to mono wavelength in a micro-lithography process using extreme ultraviolet light and form micro- patterns of high-resolution on wafers In addition, it prevents the modification between a resist latent image that occurs by a time delay between light-exposure and post exposure bake resulting from the

environmental effect and a real resist micro-circuit pattern after development,

as well as the modification of the surface layer of the resist resulting from the

reaction of a mineral acid producing agent and the acid produced by base

amine, namely, the formation of T-top type pattern The resist composition

of the present invention is suitable for the preparations of 256 mega and

giga bit DRAM, because it has high resistance against the heat produced by

dry etching

Claims

WHAT IS CLAIMED IS:1 A polymer for a chemically amplified resist represented by thefollowing Formula 1 [Formula 1 ]Wherein RT IS hydrogen or methyl, R2 is hydrogen or CH2CH2COOC(CH3)3, R3 is Cl, Br, hydroxy, cyano, t-butoxy, CH2NH, CONH2, CH=NH, CH(OH)NH2 or C(OH)=NH,x + y + z = 1 , x is 0 1 - 0 9, y is 0 01 - 0 89, z is 0 01 - 0 89, n is 1 or 2, and when n is 2, both R2 are the same2 The polymer for a chemically amplified resist according to claim 1 ,wherein said polymer has a molecular weight of 3,000 to 30,000 and adegree of dispersion of 1 01 to 3 003 A light sensitive resist composition comprisinga) a polymer represented by the following formula 1

[Formula 1]

Wherein Ri is hydrogen or methyl, R₂ is hydrogen or CH₂CH₂COOC(CH₃)₃, R₃ is Cl, Br, hydroxy, cyano, t-butoxy, CH₂NH, CONH₂, CH=NH, CH(OH)NH₂ or C(OH)=NH,

x + y + z = 1 , x is 0.1 - 0.9, y is 0.01 - 0.89, z is 0.01 - 0.89, n is 1 or 2, and when n is 2, both R₂ are the same. b) an acid producing agent; and c) a solvent.

4. A light sensitive resist composition according to claim 3, wherein said

polymer represented by Formula 1 is contained in the composition in an

amount of 0.1 to 50 wt%.

5. A light sensitive resist composition according to claim 3, wherein said b)

acid producing agent is selected from the group consisting of:

sulfonium salt selected from:

iodonium salt selected from:

N-ιmιnosulfonates selected from

disulfonates which is

(Wherein R is H, -CH₃ or -C(CH₃)₃)

bisarylsulfonyldiazomethane which is

(Wherein R is H, -CH₃ or -C(CH₃)₃) arylcarbonylarylsulfonyldiazomethane which is

(Wherein R is H, -CH₃ or -C(CH₃)₃),

and a mixture thereof,

and said acid producing agent is contained in the composition in an amount

of 0.1 to 50 wt%.

6. A light sensitive chemically amplified resist composition according to claim 3, wherein said c) solvent is selected from the group consisting of ethyleneglycol monoethylether acetate, propyleneglycol monomethylether acetate, ethylether acetate, n-butyl acetate, methyl isobutyl ketone, ethyl

lactate, 3-ethoxy-ethylpropionate, 3-methoxy-methylpropionate, diglycol

monoethylether, 2-heptanone, diacetonealcohol, β -methoxyisobutyricaicd

methyl ester, propyleneglycol monomethylether, propyleneglycol

monomethylpropionate, methyl lactate, butyl lactate, ethyl pyruvate, y -

butyrol lactone, and a mixture thereof, and said solvent is contained in the composition in an amount of 0.1 to 99 wt%.