WO2001017076A3 - Tunable laser source with integrated optical amplifier - Google Patents

Tunable laser source with integrated optical amplifier Download PDF

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Publication number
WO2001017076A3
WO2001017076A3 PCT/US2000/022816 US0022816W WO0117076A3 WO 2001017076 A3 WO2001017076 A3 WO 2001017076A3 US 0022816 W US0022816 W US 0022816W WO 0117076 A3 WO0117076 A3 WO 0117076A3
Authority
WO
WIPO (PCT)
Prior art keywords
optical amplifier
tunable laser
laser source
integrated optical
centerline
Prior art date
Application number
PCT/US2000/022816
Other languages
French (fr)
Other versions
WO2001017076A2 (en
WO2001017076A9 (en
Inventor
Thomas Beck Mason
Gregory Fish
Larry Coldren
Original Assignee
Agility Communications Inc
Thomas Beck Mason
Gregory Fish
Larry Coldren
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/614,375 external-priority patent/US6658035B1/en
Priority claimed from US09/614,195 external-priority patent/US6574259B1/en
Priority claimed from US09/614,895 external-priority patent/US6349106B1/en
Priority claimed from US09/614,377 external-priority patent/US6580739B1/en
Priority claimed from US09/614,674 external-priority patent/US6624000B1/en
Priority claimed from US09/614,224 external-priority patent/US6654400B1/en
Priority claimed from US09/614,376 external-priority patent/US6614819B1/en
Priority claimed from US09/614,378 external-priority patent/US6628690B1/en
Priority to DE60026071T priority Critical patent/DE60026071T8/en
Priority to EP00986181A priority patent/EP1210753B1/en
Application filed by Agility Communications Inc, Thomas Beck Mason, Gregory Fish, Larry Coldren filed Critical Agility Communications Inc
Priority to JP2001520520A priority patent/JP4918203B2/en
Priority to CA002384033A priority patent/CA2384033A1/en
Priority to AU22463/01A priority patent/AU2246301A/en
Publication of WO2001017076A2 publication Critical patent/WO2001017076A2/en
Publication of WO2001017076A3 publication Critical patent/WO2001017076A3/en
Publication of WO2001017076A9 publication Critical patent/WO2001017076A9/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C40—COMBINATORIAL TECHNOLOGY
    • C40B—COMBINATORIAL CHEMISTRY; LIBRARIES, e.g. CHEMICAL LIBRARIES
    • C40B30/00—Methods of screening libraries
    • C40B30/04—Methods of screening libraries by measuring the ability to specifically bind a target molecule, e.g. antibody-antigen binding, receptor-ligand binding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N33/00—Investigating or analysing materials by specific methods not covered by groups G01N1/00 - G01N31/00
    • G01N33/48—Biological material, e.g. blood, urine; Haemocytometers
    • G01N33/50—Chemical analysis of biological material, e.g. blood, urine; Testing involving biospecific ligand binding methods; Immunological testing
    • G01N33/68—Chemical analysis of biological material, e.g. blood, urine; Testing involving biospecific ligand binding methods; Immunological testing involving proteins, peptides or amino acids
    • G01N33/6803—General methods of protein analysis not limited to specific proteins or families of proteins
    • G01N33/6845—Methods of identifying protein-protein interactions in protein mixtures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
    • H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2500/00—Screening for compounds of potential therapeutic value
    • G01N2500/10—Screening for compounds of potential therapeutic value involving cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06256—Controlling the frequency of the radiation with DBR-structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
    • H01S5/1209—Sampled grating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
    • H01S5/1215—Multiplicity of periods
    • H01S5/1218—Multiplicity of periods in superstructured configuration, e.g. more than one period in an alternate sequence
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/124—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts
    • H01S5/1243—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers incorporating phase shifts by other means than a jump in the grating period, e.g. bent waveguides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3413—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers comprising partially disordered wells or barriers
    • H01S5/3414—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers comprising partially disordered wells or barriers by vacancy induced interdiffusion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30

Abstract

A laser assembly includes an epitaxial structure formed on a substrate. A separately controllable tunable laser resonator and external optical amplifier are formed in the epitaxial structure. At least a portion of the laser and amplifier share a common waveguide, which may have non-uniform optical or geometrical properties along the waveguide centerline or across a normal to the centerline.
PCT/US2000/022816 1999-09-02 2000-08-18 Tunable laser source with integrated optical amplifier WO2001017076A2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
AU22463/01A AU2246301A (en) 1999-09-02 2000-08-18 Tunable laser source with integrated optical amplifier
CA002384033A CA2384033A1 (en) 1999-09-02 2000-08-18 Tunable laser source with integrated optical amplifier
JP2001520520A JP4918203B2 (en) 1999-09-02 2000-08-18 Tunable laser source with integrated optical amplifier
DE60026071T DE60026071T8 (en) 1999-09-02 2000-08-18 TUNABLE LASER SOURCE WITH INTEGRATED OPTICAL AMPLIFIER
EP00986181A EP1210753B1 (en) 1999-09-02 2000-08-18 Tunable laser source with integrated optical amplifier

Applications Claiming Priority (25)

Application Number Priority Date Filing Date Title
US16207299P 1999-09-02 1999-09-02
US15204999P 1999-09-02 1999-09-02
US15207299P 1999-09-02 1999-09-02
US15203899P 1999-09-02 1999-09-02
US60/152,049 1999-09-02
US60/152,072 1999-09-02
US60/152,038 1999-09-02
US61486500A 2000-07-12 2000-07-12
US09/614,375 US6658035B1 (en) 1999-09-02 2000-07-12 Tunable laser source with integrated optical amplifier
US09/614,895 2000-07-12
US09/614,674 2000-07-12
US09/614,224 2000-07-12
US09/614,378 2000-07-12
US09/614,378 US6628690B1 (en) 1999-09-02 2000-07-12 Opto-electronic laser with integrated modulator
US09/614,375 2000-07-12
US09/614,865 2000-07-12
US09/614,376 US6614819B1 (en) 1999-09-02 2000-07-12 Method of modulating an optical wavelength with an opto-electronic laser with integrated modulator
US09/614,195 2000-07-12
US09/614,376 2000-07-12
US09/614,224 US6654400B1 (en) 1999-09-02 2000-07-12 Method of making a tunable laser source with integrated optical amplifier
US09/614,674 US6624000B1 (en) 1999-09-02 2000-07-12 Method for making a monolithic wavelength converter assembly
US09/614,377 2000-07-12
US09/614,377 US6580739B1 (en) 1999-09-02 2000-07-12 Integrated opto-electronic wavelength converter assembly
US09/614,895 US6349106B1 (en) 1999-09-02 2000-07-12 Method for converting an optical wavelength using a monolithic wavelength converter assembly
US09/614,195 US6574259B1 (en) 1999-09-02 2000-07-12 Method of making an opto-electronic laser with integrated modulator

Publications (3)

Publication Number Publication Date
WO2001017076A2 WO2001017076A2 (en) 2001-03-08
WO2001017076A3 true WO2001017076A3 (en) 2001-10-25
WO2001017076A9 WO2001017076A9 (en) 2002-09-19

Family

ID=27584540

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2000/022816 WO2001017076A2 (en) 1999-09-02 2000-08-18 Tunable laser source with integrated optical amplifier

Country Status (1)

Country Link
WO (1) WO2001017076A2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6822995B2 (en) 2002-02-21 2004-11-23 Finisar Corporation GaAs/AI(Ga)As distributed bragg reflector on InP
US8168456B2 (en) 2004-10-01 2012-05-01 Finisar Corporation Vertical cavity surface emitting laser with undoped top mirror
US8451875B2 (en) 2004-10-01 2013-05-28 Finisar Corporation Vertical cavity surface emitting laser having strain reduced quantum wells

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7095770B2 (en) 2001-12-20 2006-08-22 Finisar Corporation Vertical cavity surface emitting laser including indium, antimony and nitrogen in the active region
JP4660999B2 (en) * 2001-08-01 2011-03-30 パナソニック株式会社 Optical waveguide device, coherent light source and optical apparatus
US7116851B2 (en) 2001-10-09 2006-10-03 Infinera Corporation Optical signal receiver, an associated photonic integrated circuit (RxPIC), and method improving performance
EP1436870A2 (en) 2001-10-09 2004-07-14 Infinera Corporation TRANSMITTER PHOTONIC INTEGRATED CIRCUITS (TxPIC) AND OPTICAL TRANSPORT NETWORKS EMPLOYING TxPICs
WO2003032547A2 (en) 2001-10-09 2003-04-17 Infinera Corporation Transmitter photonic integrated circuit
US6963685B2 (en) 2002-07-09 2005-11-08 Daniel Mahgerefteh Power source for a dispersion compensation fiber optic system
US7263291B2 (en) 2002-07-09 2007-08-28 Azna Llc Wavelength division multiplexing source using multifunctional filters
US7663762B2 (en) 2002-07-09 2010-02-16 Finisar Corporation High-speed transmission system comprising a coupled multi-cavity optical discriminator
US7054538B2 (en) 2002-10-04 2006-05-30 Azna Llc Flat dispersion frequency discriminator (FDFD)
FR2870360B1 (en) 2004-05-17 2006-08-25 Avanex France Sa Sa OPTOELECTRONIC COMPONENT COMPRISING A CURVED WAVEGUIDE WITH RECOVERY INCLINING FLANGES

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1539028A (en) * 1975-12-18 1979-01-24 Tokyo Inst Tech Optical systems
US5088105A (en) * 1991-03-26 1992-02-11 Spectra Diode Laboratories, Inc. Optical amplifier with folded light path and laser-amplifier combination
EP0620475A1 (en) * 1993-03-15 1994-10-19 Canon Kabushiki Kaisha Optical devices and optical communication systems using the optical device
US5715268A (en) * 1994-01-24 1998-02-03 Sdl, Inc. Laser amplifiers with suppressed self oscillation

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1539028A (en) * 1975-12-18 1979-01-24 Tokyo Inst Tech Optical systems
US5088105A (en) * 1991-03-26 1992-02-11 Spectra Diode Laboratories, Inc. Optical amplifier with folded light path and laser-amplifier combination
EP0620475A1 (en) * 1993-03-15 1994-10-19 Canon Kabushiki Kaisha Optical devices and optical communication systems using the optical device
US5715268A (en) * 1994-01-24 1998-02-03 Sdl, Inc. Laser amplifiers with suppressed self oscillation

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
LEE S -L ET AL: "SAMPLED GRATING DBR LASER ARRAYS WITH ADJUSTABLE 0.8/1.6-NM WAVELENGTH SPACING", IEEE PHOTONICS TECHNOLOGY LETTERS,IEEE INC. NEW YORK,US, vol. 11, no. 8, August 1999 (1999-08-01), pages 955 - 957, XP000860962, ISSN: 1041-1135 *
VIJAYSEKHAR JAYARAMAN ET AL: "THEORY, DESIGN, AND PERFORMANCE OF EXTENDED TUNING RANGE SEMICONDUCTOR LASERS WITH SAMPLED GRATINGS", IEEE JOURNAL OF QUANTUM ELECTRONICS,IEEE INC. NEW YORK,US, vol. 29, no. 6, 1 June 1993 (1993-06-01), pages 1824 - 1834, XP000397620, ISSN: 0018-9197 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6822995B2 (en) 2002-02-21 2004-11-23 Finisar Corporation GaAs/AI(Ga)As distributed bragg reflector on InP
US8168456B2 (en) 2004-10-01 2012-05-01 Finisar Corporation Vertical cavity surface emitting laser with undoped top mirror
US8451875B2 (en) 2004-10-01 2013-05-28 Finisar Corporation Vertical cavity surface emitting laser having strain reduced quantum wells

Also Published As

Publication number Publication date
WO2001017076A2 (en) 2001-03-08
WO2001017076A9 (en) 2002-09-19

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