WO2001015211A1 - Improved fill material for dual damascene processes - Google Patents
Improved fill material for dual damascene processes Download PDFInfo
- Publication number
- WO2001015211A1 WO2001015211A1 PCT/US2000/022839 US0022839W WO0115211A1 WO 2001015211 A1 WO2001015211 A1 WO 2001015211A1 US 0022839 W US0022839 W US 0022839W WO 0115211 A1 WO0115211 A1 WO 0115211A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- composition
- hole
- fill
- film
- contact
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
- H01L21/76808—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures involving intermediate temporary filling with material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/312—Organic layers, e.g. photoresist
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
- Y10T428/12556—Organic component
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001519478A JP5079959B2 (en) | 1999-08-26 | 2000-08-17 | Improved packing material for dual damascene process |
AU67900/00A AU6790000A (en) | 1999-08-26 | 2000-08-17 | Improved fill material for dual damascene processes |
EP00955751.3A EP1212788B1 (en) | 1999-08-26 | 2000-08-17 | Improved fill material for dual damascene processes |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US38378599A | 1999-08-26 | 1999-08-26 | |
US09/383,785 | 1999-08-26 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2001015211A1 true WO2001015211A1 (en) | 2001-03-01 |
Family
ID=23514719
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2000/022839 WO2001015211A1 (en) | 1999-08-26 | 2000-08-17 | Improved fill material for dual damascene processes |
Country Status (8)
Country | Link |
---|---|
US (6) | US20010056144A1 (en) |
EP (1) | EP1212788B1 (en) |
JP (1) | JP5079959B2 (en) |
KR (1) | KR100708491B1 (en) |
CN (2) | CN1196180C (en) |
AU (1) | AU6790000A (en) |
TW (1) | TWI290343B (en) |
WO (1) | WO2001015211A1 (en) |
Cited By (6)
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WO2001097284A2 (en) * | 2000-06-14 | 2001-12-20 | Infineon Technologies North America Corp. | Method for forming dual damascene structure |
WO2002099531A2 (en) * | 2001-06-05 | 2002-12-12 | Brewer Science, Inc. | ANTI-REFLECTIVE COATING COMPOSITIONS FOR USE WITH LOW k DIELECTRIC MATERIALS |
JP2004532519A (en) * | 2001-03-23 | 2004-10-21 | インターナショナル・ビジネス・マシーンズ・コーポレーション | Manufacturing method of electronic structure |
US6893684B2 (en) | 2001-06-05 | 2005-05-17 | Brewer Science Inc. | Anti-reflective coating compositions for use with low k dielectric materials |
WO2005050732A1 (en) * | 2003-11-17 | 2005-06-02 | Intel Corporation (A Delaware Corporation) | A method to modulate etch rate in slam |
SG118183A1 (en) * | 2002-05-02 | 2006-01-27 | Inst Of Microelectronics | Novel method to minimize iso-dense contact or via gap filling variation of polymeric materials in the spin coat process |
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JP3874989B2 (en) * | 2000-03-21 | 2007-01-31 | シャープ株式会社 | Pattern formation method |
US7054256B2 (en) | 2000-10-20 | 2006-05-30 | Ochoa Optics Llc | High capacity digital data storage by transmission of radiant energy through arrays of small diameter holes |
JP3568158B2 (en) * | 2000-12-20 | 2004-09-22 | 東京応化工業株式会社 | Protective film forming material |
US6514860B1 (en) * | 2001-01-31 | 2003-02-04 | Advanced Micro Devices, Inc. | Integration of organic fill for dual damascene process |
JP2002373936A (en) * | 2001-06-14 | 2002-12-26 | Nec Corp | Wiring formation method by dual damascene method |
JP3941433B2 (en) * | 2001-08-08 | 2007-07-04 | 株式会社豊田自動織機 | How to remove smear in via holes |
JP2003136014A (en) * | 2001-11-02 | 2003-05-13 | Nec Corp | Film-forming method |
US6548401B1 (en) * | 2002-01-23 | 2003-04-15 | Micron Technology, Inc. | Semiconductor processing methods, and semiconductor constructions |
DE10210673A1 (en) * | 2002-03-12 | 2003-09-25 | Creavis Tech & Innovation Gmbh | Injection molded body with self-cleaning properties and method for producing such injection molded body |
JP2003309172A (en) * | 2002-04-17 | 2003-10-31 | Nec Electronics Corp | Method of forming pattern in dual damascene process |
JP3516446B2 (en) * | 2002-04-26 | 2004-04-05 | 東京応化工業株式会社 | Photoresist stripping method |
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US7183224B2 (en) * | 2003-07-30 | 2007-02-27 | Hitachi Global Storage Technologies Netherlands B.V. | Liftoff process for thin photoresist |
US7348281B2 (en) * | 2003-09-19 | 2008-03-25 | Brewer Science Inc. | Method of filling structures for forming via-first dual damascene interconnects |
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US20070207406A1 (en) * | 2004-04-29 | 2007-09-06 | Guerrero Douglas J | Anti-reflective coatings using vinyl ether crosslinkers |
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US7053004B2 (en) * | 2004-05-14 | 2006-05-30 | Sharp Kabushiki Kaisha | Decreasing the residue of a silicon dioxide layer after trench etching |
US8420435B2 (en) * | 2009-05-05 | 2013-04-16 | Solexel, Inc. | Ion implantation fabrication process for thin-film crystalline silicon solar cells |
US9508886B2 (en) | 2007-10-06 | 2016-11-29 | Solexel, Inc. | Method for making a crystalline silicon solar cell substrate utilizing flat top laser beam |
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US7189640B2 (en) * | 2004-12-02 | 2007-03-13 | United Microelectronics Corp. | Method of forming damascene structures |
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US7600527B2 (en) | 2005-04-01 | 2009-10-13 | Fike Corporation | Reverse acting rupture disc with laser-defined electropolished line of weakness and method of forming the line of weakness |
US8735016B2 (en) * | 2005-05-12 | 2014-05-27 | GM Global Technology Operations LLC | Hydrophilic, electrically conductive fluid distribution plate for fuel cell |
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-
2000
- 2000-08-17 AU AU67900/00A patent/AU6790000A/en not_active Abandoned
- 2000-08-17 JP JP2001519478A patent/JP5079959B2/en not_active Expired - Lifetime
- 2000-08-17 WO PCT/US2000/022839 patent/WO2001015211A1/en active Application Filing
- 2000-08-17 CN CNB00813264XA patent/CN1196180C/en not_active Expired - Lifetime
- 2000-08-17 KR KR1020027002476A patent/KR100708491B1/en active IP Right Grant
- 2000-08-17 EP EP00955751.3A patent/EP1212788B1/en not_active Expired - Lifetime
- 2000-08-17 CN CN2005100091976A patent/CN1658375B/en not_active Expired - Lifetime
- 2000-08-25 TW TW089117234A patent/TWI290343B/en not_active IP Right Cessation
-
2001
- 2001-07-30 US US09/918,110 patent/US20010056144A1/en not_active Abandoned
- 2001-08-16 US US09/931,264 patent/US6391472B1/en not_active Expired - Lifetime
- 2001-09-27 US US09/966,208 patent/US20020016057A1/en not_active Abandoned
-
2002
- 2002-07-15 US US10/196,603 patent/US20020183426A1/en not_active Abandoned
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2003
- 2003-02-14 US US10/366,963 patent/US20030148601A1/en not_active Abandoned
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2004
- 2004-01-16 US US10/759,447 patent/US7026237B2/en not_active Expired - Lifetime
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Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2001097284A2 (en) * | 2000-06-14 | 2001-12-20 | Infineon Technologies North America Corp. | Method for forming dual damascene structure |
WO2001097284A3 (en) * | 2000-06-14 | 2002-04-25 | Infineon Technologies Corp | Method for forming dual damascene structure |
JP2004532519A (en) * | 2001-03-23 | 2004-10-21 | インターナショナル・ビジネス・マシーンズ・コーポレーション | Manufacturing method of electronic structure |
WO2002099531A2 (en) * | 2001-06-05 | 2002-12-12 | Brewer Science, Inc. | ANTI-REFLECTIVE COATING COMPOSITIONS FOR USE WITH LOW k DIELECTRIC MATERIALS |
US6663916B2 (en) * | 2001-06-05 | 2003-12-16 | Brewer Science, Inc. | Anti-reflective coating of polymer with epoxide rings reacted with light attenuating compound and unreacted epoxide rings |
US6670425B2 (en) * | 2001-06-05 | 2003-12-30 | Brewer Science, Inc. | Anti-reflective coating of polymer with epoxide rings reacted with light attenuating compound and unreacted epoxide rings |
WO2002099531A3 (en) * | 2001-06-05 | 2004-06-17 | Brewer Science Inc | ANTI-REFLECTIVE COATING COMPOSITIONS FOR USE WITH LOW k DIELECTRIC MATERIALS |
US6893684B2 (en) | 2001-06-05 | 2005-05-17 | Brewer Science Inc. | Anti-reflective coating compositions for use with low k dielectric materials |
SG118183A1 (en) * | 2002-05-02 | 2006-01-27 | Inst Of Microelectronics | Novel method to minimize iso-dense contact or via gap filling variation of polymeric materials in the spin coat process |
WO2005050732A1 (en) * | 2003-11-17 | 2005-06-02 | Intel Corporation (A Delaware Corporation) | A method to modulate etch rate in slam |
US7101798B2 (en) | 2003-11-17 | 2006-09-05 | Intel Corporation | Method to modulate etch rate in SLAM |
US7572732B2 (en) | 2003-11-17 | 2009-08-11 | Intel Corporation | Method to modulate etch rate in SLAM |
Also Published As
Publication number | Publication date |
---|---|
US20020041953A1 (en) | 2002-04-11 |
EP1212788A4 (en) | 2008-04-16 |
JP2003508894A (en) | 2003-03-04 |
US7026237B2 (en) | 2006-04-11 |
JP5079959B2 (en) | 2012-11-21 |
US6391472B1 (en) | 2002-05-21 |
US20030148601A1 (en) | 2003-08-07 |
TWI290343B (en) | 2007-11-21 |
CN1658375B (en) | 2011-03-30 |
EP1212788A1 (en) | 2002-06-12 |
EP1212788B1 (en) | 2014-06-11 |
KR100708491B1 (en) | 2007-04-16 |
KR20020059378A (en) | 2002-07-12 |
AU6790000A (en) | 2001-03-19 |
US20010056144A1 (en) | 2001-12-27 |
CN1658375A (en) | 2005-08-24 |
US20020183426A1 (en) | 2002-12-05 |
US20040147108A1 (en) | 2004-07-29 |
CN1376306A (en) | 2002-10-23 |
US20020016057A1 (en) | 2002-02-07 |
CN1196180C (en) | 2005-04-06 |
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