WO2001010013A1 - High-efficiency modulating rf amplifier - Google Patents
High-efficiency modulating rf amplifier Download PDFInfo
- Publication number
- WO2001010013A1 WO2001010013A1 PCT/US2000/020841 US0020841W WO0110013A1 WO 2001010013 A1 WO2001010013 A1 WO 2001010013A1 US 0020841 W US0020841 W US 0020841W WO 0110013 A1 WO0110013 A1 WO 0110013A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- signal
- amplifier
- power
- switch
- control
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03C—MODULATION
- H03C5/00—Amplitude modulation and angle modulation produced simultaneously or at will by the same modulating signal
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0211—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the supply voltage or current
- H03F1/0216—Continuous control
- H03F1/0222—Continuous control by using a signal derived from the input signal
- H03F1/0227—Continuous control by using a signal derived from the input signal using supply converters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0211—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the supply voltage or current
- H03F1/0244—Stepped control
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
- H03F3/1935—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices with junction-FET devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/217—Class D power amplifiers; Switching amplifiers
- H03F3/2176—Class E amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G3/00—Gain control in amplifiers or frequency changers without distortion of the input signal
- H03G3/004—Control by varying the supply voltage
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2201/00—Indexing scheme relating to details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements covered by H03F1/00
- H03F2201/32—Indexing scheme relating to modifications of amplifiers to reduce non-linear distortion
- H03F2201/3215—To increase the output power or efficiency
Definitions
- the present invention relates to RF amplifiers and signal modulation.
- Battery life is a significant concern in wireless communications devices such as cellular telephones, pagers, wireless modems, etc. Radio-frequency transmission, especially, consumes considerable power. A contributing factor to such power consumption is inefficient power amplifier operation. A typical RF power amplifier for wireless communications operates with only about 10% efficiency. Clearly, a low-cost technique for significantly boosting amplifier efficiency would satisfy an acute need.
- the transmitted information is sent in a series of one or more short bursts, where the transmitter is active only during the burst times and inactive at all other times. It is therefore also desirable that control of burst activation and deactivation be controlled in an energy-efficient manner, further contributing to extended battery life.
- Power amplifiers are classified into different groups: Class A, Class B, Class AB, etc.
- the different classes of power amplifiers usually signify different biasing conditions. In designing an RF power amplifier, there is usually a trade-off between linearity and efficiency.
- the different classes of amplifier operation offer designers ways to balance these two parameters.
- Linear amplifiers e.g. Class A amplifiers and Class B push-pull amplifiers
- non-linear amplifiers e.g. single-ended Class B and Class C ampli- fiers
- the output signal is not directly proportional to the input signal.
- the resulting amplitude distortion on the output signal makes these amplifiers most applicable to signals without any amplitude modulation, which are also known as constant-envelope signals.
- Amplifier output efficiency is defined as the ratio between the RF output power and the input (DC) power.
- a major source of power amplifier inefficiency is power dissipated in the transistor.
- a Class A amplifier is inefficient since current flows continuously through the device. Conventionally, efficiency is improved by trading-off linearity for increased efficiency.
- biasing conditions are chosen such that the output signal is cut off during half of the cycle unless the opposing half is provided by a second transistor (push-pull). As a result, the waveform will be less linear.
- the output waveform may still be made sinusoidal using a tank circuit or other filter to filter out higher and lower frequency components.
- Class C amplifiers conduct during less than 50% of the cycle, in order to further increase efficiency; i.e., if the output current conduction angle is less than 180 degrees, the amplifier is referred to as Class C.
- This mode of operation can have a greater efficiency than Class A or Class B, but it typically creates more distortion than Class A or Class B amplifiers.
- a Class E power amplifier uses a single transistor, in contrast with a Class D power amplifier, which uses two transistors
- Class F amplifiers generate a more square output waveform as compared to the usual sinewave. This "squaring-up" of the output waveform is achieved by encouraging the generation of odd-order harmonics (i.e., x3, x5, x7, etc.) and suppressing the even-order harmonics (i.e., x2, x4, etc.) in the output network.
- odd-order harmonics i.e., x3, x5, x7, etc.
- even-order harmonics i.e., x2, x4, etc.
- FIG. 1 An example of a known power amplifier for use in a cellular telephone is shown in Figure 1.
- GSM cellular telephones for example, must be capable of programming output power over a 30dBm range.
- the transmitter turn-on and turn-off profiles must be accurately controlled to prevent spurious emissions.
- Power is controlled directly by the DSP (digital signal processor) of the cellular telephone, via a DAC (digital to analog converter).
- a signal GCTL drives the gate of an external AGC amplifier that controls the RF level to the power amplifier. A portion of the output is fed back, via a directional coupler, for closed-loop operation.
- the amplifier in Figure 1 is not a switch-mode amplifier. Rather, the amplifier is at best a Class AB amplifier driven into saturation, and hence demonstrates relatively poor efficiency.
- the Class E amplifier arrangement of Figure 2 although it is theoretically capable of achieving high conversion efficiency, suffers from the disadvantage that large voltage swings occur at the output of the active device, due to ringing. This large voltage swing, which typically exceeds three times the supply voltage, precludes the use of the Class E circuit with certain active devices which have a low breakdown voltage.
- the PAE of a power amplifier is set by the amount of DC supply power required to realize the last 26dB of gain required to achieve the final output power. (At this level of gain, the power input to the amplifier through the driving signal—which is not readily susceptible to measurement— becomes negligible.)
- the amplifying devices capable of producing output powers of 1 W or greater at radio frequencies and that also provide a power gain of at least 26dB. Accordingly, one or more amplifiers must be provided ahead of the final stage, and the DC power consumed by such amplifiers must be included in the determination of overall PAE.
- FIG. 5 Another example of a conventional RF power amplifier circuit is shown in Figure 5.
- This circuit uses "resonant interstage matching" in which the drive and final stages are coupled using a coupling capacitor Ccpl.
- a related problem is the generation of modulated signals, e.g., amplitude modulated (AM) signals, quadrature amplitude modulated signals (QAM), etc.
- a known IQ modulation structure is shown in Figure 6.
- a data signal is applied to a quadrature modulation encoder that produces I and Q signals.
- the I and Q signals are applied to a quadrature modulator along with a carrier signal.
- the carrier signal is generated by a carrier generation block to which a tuning signal is applied.
- an output signal of the quadrature modulator is then applied to a variable attenuator controlled in accordance with a power control signal.
- power control is implemented by vaying the gain of the amplifier. This is achieved by adjusting the bias on transistors within the inear amplifier, taking advantage of the effect where transistor transconductance varies with the aplied bias conditions. Since amplifier gain is strongly related to the transistor transconductance, varying the transconductance effectively varies the amplifier gain. A resulting signal is then amplified by a linear power amplifier and applied to an antenna.
- AM signals the amplitude of the signal is made substantially proportional to the magnitude of an information signal, such as voice.
- Information signals such as voice are not constant in nature, and so the resulting AM signals are continuously varying in output power.
- a method for producing accurate amplitude modulated signals using nonlinear Class C amplifiers, called "plate modulation,” has been known for over 70 years as described in texts such as Terman's Radio Engineers Handbook (McGraw-Hill, 1943).
- output current from the modulator amplifier is linearly added to the power supply current to the amplifying element (vacuum tube or transistor), such that the power supply current is increased and decreased from its average value in accordance with the amplitude modulation.
- This varying current causes the apparent power supply voltage on the amplifying element to vary, in accordance with the resistance (or conductance) characteristics of the amplifying element.
- AM By using this direct control of output power, AM can be effected as long as the bandwidth of the varying operating voltage is sufficient. That is, these nonlinear amplifiers actually act as linear amplifiers with respect to the amplifier operating voltage. To the extent that this operating voltage can be varied with time while driving the nonlinear power amplifier, the output signal will be linearly amplitude modulated.
- U.S. Patent 5,126,688 to Nakanishi et al. addresses the control of linear amplifiers using feedback control to set the actual amplifier output power, combined with periodic adjustment of the power amplifier operating voltage to improve the operating efficiency of the power amplifier.
- the primary drawback of this technique is the requirement for an additional control circuit to sense the desired output power, to decide whether (or not) the power amplifier operating voltage should be changed to improve efficiency, and to effect any change if so decided.
- This additional control circuitry increases amplifier complexity and draws additional power beyond that of the amplifier itself, which directly reduces overall efficiency.
- a further challenge has been to generate a high-power RF signal having desired modulation characteristics.
- This object is achieved in accordance with the teachings of U.S. Patent 4,580,1 1 1 to Swanson by using a multitude of high efficiency amplifiers providing a fixed output power, which are enabled in sequence such that the desired total combined output power is a multiple of this fixed individual amplifier power.
- the smallest change in overall output power is essentially equal to the power of each of the multitude of high efficiency amplfiers. If finely graded output power resolution is required, then potentially a very large number of individual high efficiency amplifiers may be required. This clearly increases the overall complexity of the amplifier.
- U.S. Patent 5,321,799 performs polar modulation, but is restricted to full- response data signals and is not useful with high power, high-efficiency amplifiers.
- the patent teaches that amplitude variations on the modulated signal are applied through a digital multiplier following phase modulation and signal generation stages. The final analog signal is then developed using a digital-to-analog converter.
- signals with information already implemented in amplitude variations are not compatible with high-efficiency, nonlinear power amplifiers due to the possibly severe distortion of the signal amplitude variations.
- the present invention provides for high-efficiency power control of a high-efficiency (e.g., hard-limiting or switch-mode) power amplifier in such a manner as to achieve a desired control or modulation.
- a high-efficiency (e.g., hard-limiting or switch-mode) power amplifier in such a manner as to achieve a desired control or modulation.
- feedback is not required. That is, the amplifier may be controlled without continuous or frequent feedback adjustment.
- the spread between a maximum frequency of the desired modulation and the operating frequency of a switch-mode DC-DC converter is reduced by following the switch- mode converter with an active linear regulator.
- the linear regulator is designed so as to control the operating voltage of the power amplifier with sufficient bandwidth to faithfully reproduce the desired amplitude modulation waveform.
- the linear regulator is further designed to reject variations on its input voltage even while the output voltage is changed in response to an applied control signal. This rejection will occur even though the variations on the input voltage are of commensurate or even lower frequency than that of the controlled output variation.
- Amplitude modulation may be achieved by directly or effectively varying the operating voltage on the power amplifier while simultaneously achieving high efficiency in the conversion of primary DC power to the amplitude modulated output signal. High efficiency is enhanced by allowing the switch-mode DC-to-DC converter to also vary its output voltage such that the voltage drop across the linear regulator is kept at a low and relatively constant level.
- Time-division multiple access (TDMA) bursting capability may be combined with efficient amplitude modulation, with control of these functions being combined.
- the variation of average output power level in accordance with commands from a communications system may also be combined within the same structure.
- the high-efficiency amplitude modulation structure may be extended to any arbitrary modulation. Modulation is performed in polar form, i.e., in a quadrature-free manner.
- Figure 1 is a block diagram of a known power amplifier with output power controlled by varying the power supply voltage
- FIG. 2 is a simplified block diagram of a known single-ended switch mode RF amplifier
- Figure 3 is a schematic diagram of a portion of a known RF amplifier
- Figure 4 is a schematic diagram of a conventional RF power amplifier circuit
- Figure 5 is a schematic diagram of another conventional RF power amplifier circuit
- Figure 6 is a block diagram of a known IQ modulation structure
- Figure 7 is a block diagram of a power amplifier in accordance with an exemplary embodiment
- Figure 9 is a waveform diagram illustrating operation of one embodiment
- Figure 1 1 is a waveform diagram illustrating bursted AM operation
- Figure 13 is a block diagram of a polar modulation structure using a high- efficiency amplifier
- Figure 16 is a block diagram of a second high power, high efficiency, amplitude modulating RF amplifier
- Figure 17 is a waveform diagram illustrating operation of the amplifier of Figure 16;
- Figure 18 is a block diagram of an RF switch mode amplifier in accordance with one embodiment
- Figure 20 is a schematic diagram of a suitable load network for use in the RF switch mode amplifier of Figure 19;
- Figure 21 is a waveform diagram showing input voltage and related waveforms for the RF switch mode amplifier of Figure 19;
- Figure 22 is a waveform diagram showing base and collector current waveforms of the switching transistor of Figure 19;
- Figure 23 is a waveform diagram showing output voltage for the RF switch mode amplifier of Figure 19;
- Figure 24 is a schematic diagram of a portion of an RF switch mode amplifier in accordance with another embodiment
- Figure 25 is a waveform diagram showing input voltage and related waveforms for the RF switch mode amplifier of Figure 24;
- Figure 26 is a waveform diagram showing collector current waveforms of the drive transistors of Figure 24;
- Figure 27 is a waveform diagram showing a gate voltage waveform of the switching transistor of Figure 24;
- Figure 28 is a schematic diagram of an RF power amplifier circuit in accordance with another embodiment.
- Figure 29 is a waveform diagram showing waveforms occurring at selected nodes of the amplifier circuit of Figure 28.
- FIG. 7 a block diagram is shown of a power amplifier that overcomes many of the aforementioned disadvantages.
- a switch-mode (or saturated) nonlinear amplifier has applied to it a voltage produced by a power control stage.
- the voltage V applied to the nonlinear ampli - bomb is controlled substantially in accordance with the equation
- the power control stage receives a DC input voltage, e.g., from a battery, and receives a power level control signal and outputs a voltage in accordance with the foregoing equation.
- a power control circuit in accordance with an exemplary embodiment.
- a power control circuit includes a switch-mode converter stage and a linear regulator stage connected in series.
- the switch-mode converter may be a Class D device, for example, or a switch-mode power supply (SMPS).
- SMPS switch-mode power supply
- the switch-mode converter efficiently steps down the DC voltage to a voltage that somewhat exceeds but that approximates the desired power-amplifier operating voltage level. That is, the switch-mode converter performs an efficient gross power level control.
- the switch-mode converter may or may not provide sufficiently fine control to define ramp portions of a desired power envelope.
- the linear regulator performs a filtering function on the output of the switch-mode converter. That is, the linear regulator controls precise power-envelope modulation during a TDMA burst, for example.
- the linear regulator may or may not provide level control capabilities like those of the switch-mode converter.
- the power control circuit may be used to perform power control and/or amplitude modulation.
- a control signal PL/BURST/MOD is input to a control block, which outputs appropriate analog or digital control signals for the switch-mode converter and the linear regulator.
- the control block may be realized as a ROM (read-only memory) and/or a DAC (digital to analog converter).
- the waveforms A and B represent analog control signals applied to the switch-mode converter and to the linear regulator, respectively.
- the waveforms Vj and V 2 represent the output voltages of the switch-mode converter and to the linear regulator, respectively.
- the switch-mode converter has a relatively large time constant, i.e., that it ramps relatively slowly.
- the control signal A is set to a first non-zero power level
- the voltage V j will then begin to ramp toward a commensurate voltage.
- the voltage V j may have a considerable amount of ripple.
- An amount of time required to reach the desired voltage defines the wakeup period.
- the control signal B When that voltage is reached, the control signal B is raised and lowered to define a series of transmission bursts.
- the control signal B When the control signal B is raised, the voltage V 2 ramps quickly up to a commensurate voltage, and when the control signal B is lowered, the voltage V 2 ramps quickly down.
- the control signal A is raised in order to increase the RF power level of subsequent bursts.
- the control signal B remains low during a wait time.
- the control signal B is then raised and lowered to define a further series of transmission bursts.
- the voltage V 2 is shown in dotted lines superimposed on the voltage V j . Note that the voltage V is less than the voltage V j by a small amount, greater than the negative peak ripple on the voltage Vj . This small difference between the input voltage of the linear regulator V j and the output voltage of the linear regulator V 2 makes overall high-efficiency operation possible.
- the switch-mode converter is assumed to have a relatively short time constant; i.e., it ramps relatively quickly.
- the control signal A when the control signal A is raised, the voltage V j ramps quickly to the commensurate voltage.
- the control signal B is then raised, and the voltage V 2 is ramped.
- the time difference between when the control signal A is raised on the control signal B is raised defines the wake up time, which may be very short, maximizing sleep time and power savings.
- the control signal B is then lowered at the conclusion of the transmission burst, after which the control signal A is lowered.
- the control signal A when the control signal A is next raised, it defines a higher power level. Again, the voltage V 2 is superimposed in dotted lines on the voltage V j .
- FIG. 1 a waveform diagram is shown illustrating bursted AM operation.
- An output signal of the switch-mode converted is shown as a solid line.
- the switch-mode converter may ramp up to a fixed level with the linear regulator effecting all of the amplitude modulation on the output signal. More preferably, from an efficiency standpoint, the switch-mode converter effects amplitude modulation, producing an output signal that, ignoring noise, is a small fixed offset ⁇ V above the desired output signal.
- the linear regulator removes the noise from the output signal of the switch-mode converter, effectively knocking down the signal by the amount ⁇ V.
- the output signal of the linear regulator is shown as a dotted line in Figure 1 1. At the conclusion of the burst, the signals ramp down.
- the magnitude driver also receives a power control signal. In response, the magnitude driver produces an operating voltage that is applied to the non-linear amplifier.
- the magnitude driver and the non-linear amplifier may be realized in the same manner as Figure 7, described previously, as indicated in Figure 13 by a dashed line.
- a first high power, high efficiency, amplitude modulating RF amplifier includes multiple switch mode power amplifier (SMPA) blocks, each block being realized as shown in Figure 7, for example.
- An RF signal to be amplified is input to all of the SMPA blocks in common.
- Separate control signals for each of the SMPA blocks are generated by a magnitude driver in response to a magnitude input signal.
- Output signals of the SMPA blocks are summed to form a single resultant output signal.
- a common drive signal is generated and applied in common to all of the SMPAs.
- the common drive signal is caused to have a value that is one Nth of an overall magnitude signal applied to the magnitude driver, where N is the number of SMPAs.
- Respective gate bias networks are provided for the stages M j and M 2 .
- the gate bias network is composed of an inductor L 2 , a capacitor C 3 and a capacitor C 4 connected at a common node to a voltage V gl .
- the gate bias network is composed of an inductor L 6 , a capacitor C 8 and a capacitor C Q connected at a common node to a voltage V g2 .
- the driver stage and the final stage are coupled by an interstage network, shown here as a series LC combination composed of an inductor L and a capacitor C 6 , values of which are chosen so as to provide a resonance with the input capacitance of the final stage M 2 .
- the final stage M 2 is coupled to a conventional load network, illustrated in this example as a CLC Pi network composed of a capacitor Ci ⁇ , an inductor L 8 and a capacitor C i2 , values of which are determined in accordance with characteristics of the final stage M 2 .
- component values may be as follows, where capacitance is measured in picofarads and inductance is measured in nanohenries:
- the driver stage, stage M j is operated in switch mode.
- waveforms diagrams are provided showing the input voltage to the stage M 2 at node A, the drain voltage of the stage M j at node B, the drain voltage of the stage M 2 at node C, the drain current of the stage Mi at node D, and the drain current of the stage M 2 at node E.
- the peak value of the gate voltage of the final stage, stage M 2 (waveform A), is considerably greater than in conventional designs.
- the input drive of the switch may be sufficiently high that the operating voltage of the driver stage may be reduced. This reduction further reduces the DC supply power to the driver, enhancing PAE.
- PAE of 72% has been measured at an output power of 2W.
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU66157/00A AU6615700A (en) | 1999-07-29 | 2000-07-31 | High-efficiency modulating rf amplifier |
JP2001514531A JP2003506941A (en) | 1999-07-29 | 2000-07-31 | RF modulation RF amplifier |
EP00953760A EP1201024A1 (en) | 1999-07-29 | 2000-07-31 | High-efficiency modulating rf amplifier |
KR1020027001158A KR20020059343A (en) | 1999-07-29 | 2000-07-31 | High-efficiency modulating RF amplifier |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/362,880 US6198347B1 (en) | 1999-07-29 | 1999-07-29 | Driving circuits for switch mode RF power amplifiers |
US09/362,880 | 1999-07-29 | ||
US09/564,548 | 2000-05-04 | ||
US09/564,548 US7265618B1 (en) | 2000-05-04 | 2000-05-04 | RF power amplifier having high power-added efficiency |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2001010013A1 true WO2001010013A1 (en) | 2001-02-08 |
WO2001010013A9 WO2001010013A9 (en) | 2002-09-06 |
Family
ID=27001827
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2000/020841 WO2001010013A1 (en) | 1999-07-29 | 2000-07-31 | High-efficiency modulating rf amplifier |
Country Status (6)
Country | Link |
---|---|
EP (1) | EP1201024A1 (en) |
JP (1) | JP2003506941A (en) |
KR (1) | KR20020059343A (en) |
CN (1) | CN1249912C (en) |
AU (1) | AU6615700A (en) |
WO (1) | WO2001010013A1 (en) |
Cited By (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002103924A2 (en) * | 2001-06-20 | 2002-12-27 | Nokia Corporation | Power control for non-constant envelope modulation |
EP1276232A1 (en) * | 2001-07-13 | 2003-01-15 | TTPCOM Limited | Transmitter power amplifier control |
WO2003032519A2 (en) * | 2001-10-11 | 2003-04-17 | Rf Micro Devices, Inc. | Single output stage power amplification for multimode applications |
US6624711B1 (en) | 2002-06-11 | 2003-09-23 | Motorola, Inc. | Method and apparatus for power modulating to prevent instances of clipping |
US6624712B1 (en) | 2002-06-11 | 2003-09-23 | Motorola, Inc. | Method and apparatus for power modulating to prevent instances of clipping |
JP2004200130A (en) * | 2002-12-20 | 2004-07-15 | Ulvac Japan Ltd | Voltage control method and voltage control circuit device of quadrupole mass spectrometer |
US6801082B2 (en) | 2002-12-31 | 2004-10-05 | Motorola, Inc. | Power amplifier circuit and method using bandlimited signal component estimates |
US6859098B2 (en) | 2003-01-17 | 2005-02-22 | M/A-Com, Inc. | Apparatus, methods and articles of manufacture for control in an electromagnetic processor |
US6891432B2 (en) | 2002-11-14 | 2005-05-10 | Mia-Com, Inc. | Apparatus, methods and articles of manufacture for electromagnetic processing |
US6924699B2 (en) | 2003-03-06 | 2005-08-02 | M/A-Com, Inc. | Apparatus, methods and articles of manufacture for digital modification in electromagnetic signal processing |
EP1671197A2 (en) * | 2003-09-16 | 2006-06-21 | Nokia Corporation | Hybrid switched mode/linear power amplifier power supply for use in polar transmitter |
US7187231B2 (en) | 2002-12-02 | 2007-03-06 | M/A-Com, Inc. | Apparatus, methods and articles of manufacture for multiband signal processing |
US7203262B2 (en) | 2003-05-13 | 2007-04-10 | M/A-Com, Inc. | Methods and apparatus for signal modification in a fractional-N phase locked loop system |
US7245183B2 (en) | 2002-11-14 | 2007-07-17 | M/A-Com Eurotec Bv | Apparatus, methods and articles of manufacture for processing an electromagnetic wave |
WO2007091212A1 (en) * | 2006-02-10 | 2007-08-16 | Nxp B.V. | Power amplifier |
US7298854B2 (en) | 2002-12-04 | 2007-11-20 | M/A-Com, Inc. | Apparatus, methods and articles of manufacture for noise reduction in electromagnetic signal processing |
US7343138B2 (en) | 2003-12-08 | 2008-03-11 | M/A-Com, Inc. | Compensating for load pull in electromagentic signal propagation using adaptive impedance matching |
US7526260B2 (en) | 2002-11-14 | 2009-04-28 | M/A-Com Eurotec, B.V. | Apparatus, methods and articles of manufacture for linear signal modification |
US7545865B2 (en) | 2002-12-03 | 2009-06-09 | M/A-Com, Inc. | Apparatus, methods and articles of manufacture for wideband signal processing |
WO2014004241A2 (en) * | 2012-06-25 | 2014-01-03 | Eta Devices, Inc. | Rf energy recovery system and related techniques |
CN104052409A (en) * | 2013-03-15 | 2014-09-17 | 美国亚德诺半导体公司 | All digital zero-voltage switching |
EP2779443A3 (en) * | 2013-03-15 | 2014-11-19 | Analog Devices, Inc. | All digital zero-voltage switching |
US9281788B2 (en) | 2013-03-15 | 2016-03-08 | Analog Devices, Inc. | All digital zero-voltage switching |
US10056924B2 (en) | 2013-08-19 | 2018-08-21 | Analog Devices, Inc. | High output power digital-to-analog converter system |
USRE47601E1 (en) | 2013-08-19 | 2019-09-10 | Analog Devices, Inc. | High output power digital-to-analog converter system |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100728086B1 (en) * | 2003-09-16 | 2007-06-14 | 한국과학기술연구원 | High-power pulsed rf amplifier using electron tube-semiconductor cascode circuit |
DE102005010904B4 (en) * | 2005-03-09 | 2010-06-02 | Infineon Technologies Ag | Voltage regulating circuit and method for supplying an electrical component with a supply voltage |
KR100656333B1 (en) * | 2005-04-27 | 2006-12-13 | 한국과학기술원 | Power amplifier with automatically switching facility |
US7199658B2 (en) * | 2005-05-18 | 2007-04-03 | International Business Machines Corporation | Circuits and methods for implementing power amplifiers for millimeter wave applications |
EP1881611B1 (en) * | 2005-06-30 | 2019-01-16 | Panasonic Intellectual Property Management Co., Ltd. | Transmission circuit and communication device |
GB2432982A (en) * | 2005-11-30 | 2007-06-06 | Toshiba Res Europ Ltd | An EER RF amplifier with PWM signal switching |
JP2007180644A (en) * | 2005-12-27 | 2007-07-12 | Sharp Corp | Switching amplifier |
CN101110595B (en) * | 2006-07-21 | 2010-06-09 | 联发科技股份有限公司 | Multilevel linc transmitter |
CN102843108B (en) * | 2012-09-21 | 2016-07-06 | 中国科学院上海微系统与信息技术研究所 | A kind of efficient linear radio frequency power amplifying device and method |
US9461590B2 (en) * | 2014-12-12 | 2016-10-04 | Intel Corporation | Envelope tracking in connection with simultaneous transmission in one or more frequency bands |
US10735034B1 (en) * | 2019-08-13 | 2020-08-04 | Eridan Communications, Inc. | Polar modulation transmitter with wideband product mode control |
CN112511119B (en) * | 2020-12-01 | 2021-07-23 | 锐石创芯(深圳)科技有限公司 | Interstage matching circuit and push-pull power amplifying circuit |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3919656A (en) * | 1973-04-23 | 1975-11-11 | Nathan O Sokal | High-efficiency tuned switching power amplifier |
US4831334A (en) * | 1987-06-08 | 1989-05-16 | Hughes Aircraft Company | Envelope amplifier |
FR2768574A1 (en) * | 1997-09-15 | 1999-03-19 | Motorola Semiconducteurs | Power amplifier circuit for mobile radio communications, which has less energy consumption and is produced by a cost-effective method |
-
2000
- 2000-07-31 JP JP2001514531A patent/JP2003506941A/en active Pending
- 2000-07-31 CN CNB008120587A patent/CN1249912C/en not_active Expired - Lifetime
- 2000-07-31 AU AU66157/00A patent/AU6615700A/en not_active Abandoned
- 2000-07-31 EP EP00953760A patent/EP1201024A1/en not_active Withdrawn
- 2000-07-31 KR KR1020027001158A patent/KR20020059343A/en not_active Application Discontinuation
- 2000-07-31 WO PCT/US2000/020841 patent/WO2001010013A1/en not_active Application Discontinuation
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3919656A (en) * | 1973-04-23 | 1975-11-11 | Nathan O Sokal | High-efficiency tuned switching power amplifier |
US4831334A (en) * | 1987-06-08 | 1989-05-16 | Hughes Aircraft Company | Envelope amplifier |
FR2768574A1 (en) * | 1997-09-15 | 1999-03-19 | Motorola Semiconducteurs | Power amplifier circuit for mobile radio communications, which has less energy consumption and is produced by a cost-effective method |
Non-Patent Citations (1)
Title |
---|
NOJIMA T ET AL: "CIRCUIT TECHNOLOGY FOR MOBILE/PERSONAL COMMUNICATIONS", EUROPEAN MICROWAVE CONFERENCE PROCEEDINGS,GB,NEXUS BUSINESS COMMUNICATIONS, vol. CONF. 24, 5 September 1994 (1994-09-05), pages 220 - 229, XP000643169, ISBN: 0-9518-0325-5 * |
Cited By (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002103924A2 (en) * | 2001-06-20 | 2002-12-27 | Nokia Corporation | Power control for non-constant envelope modulation |
US7289777B2 (en) | 2001-06-20 | 2007-10-30 | Nokia Corporation | Power control for non-constant envelope modulation |
WO2002103924A3 (en) * | 2001-06-20 | 2004-03-04 | Nokia Corp | Power control for non-constant envelope modulation |
EP1276232A1 (en) * | 2001-07-13 | 2003-01-15 | TTPCOM Limited | Transmitter power amplifier control |
WO2003032519A2 (en) * | 2001-10-11 | 2003-04-17 | Rf Micro Devices, Inc. | Single output stage power amplification for multimode applications |
US6819941B2 (en) | 2001-10-11 | 2004-11-16 | Rf Micro Devices, Inc. | Single output stage power amplification for multimode applications |
WO2003032519A3 (en) * | 2001-10-11 | 2004-02-26 | Rf Micro Devices Inc | Single output stage power amplification for multimode applications |
US6624712B1 (en) | 2002-06-11 | 2003-09-23 | Motorola, Inc. | Method and apparatus for power modulating to prevent instances of clipping |
US6624711B1 (en) | 2002-06-11 | 2003-09-23 | Motorola, Inc. | Method and apparatus for power modulating to prevent instances of clipping |
US7245183B2 (en) | 2002-11-14 | 2007-07-17 | M/A-Com Eurotec Bv | Apparatus, methods and articles of manufacture for processing an electromagnetic wave |
US6891432B2 (en) | 2002-11-14 | 2005-05-10 | Mia-Com, Inc. | Apparatus, methods and articles of manufacture for electromagnetic processing |
US7526260B2 (en) | 2002-11-14 | 2009-04-28 | M/A-Com Eurotec, B.V. | Apparatus, methods and articles of manufacture for linear signal modification |
US7187231B2 (en) | 2002-12-02 | 2007-03-06 | M/A-Com, Inc. | Apparatus, methods and articles of manufacture for multiband signal processing |
US7545865B2 (en) | 2002-12-03 | 2009-06-09 | M/A-Com, Inc. | Apparatus, methods and articles of manufacture for wideband signal processing |
US7298854B2 (en) | 2002-12-04 | 2007-11-20 | M/A-Com, Inc. | Apparatus, methods and articles of manufacture for noise reduction in electromagnetic signal processing |
JP2004200130A (en) * | 2002-12-20 | 2004-07-15 | Ulvac Japan Ltd | Voltage control method and voltage control circuit device of quadrupole mass spectrometer |
US6801082B2 (en) | 2002-12-31 | 2004-10-05 | Motorola, Inc. | Power amplifier circuit and method using bandlimited signal component estimates |
US6859098B2 (en) | 2003-01-17 | 2005-02-22 | M/A-Com, Inc. | Apparatus, methods and articles of manufacture for control in an electromagnetic processor |
US6924699B2 (en) | 2003-03-06 | 2005-08-02 | M/A-Com, Inc. | Apparatus, methods and articles of manufacture for digital modification in electromagnetic signal processing |
US7203262B2 (en) | 2003-05-13 | 2007-04-10 | M/A-Com, Inc. | Methods and apparatus for signal modification in a fractional-N phase locked loop system |
EP1671197A2 (en) * | 2003-09-16 | 2006-06-21 | Nokia Corporation | Hybrid switched mode/linear power amplifier power supply for use in polar transmitter |
EP1671197A4 (en) * | 2003-09-16 | 2011-03-23 | Nokia Corp | Hybrid switched mode/linear power amplifier power supply for use in polar transmitter |
US7343138B2 (en) | 2003-12-08 | 2008-03-11 | M/A-Com, Inc. | Compensating for load pull in electromagentic signal propagation using adaptive impedance matching |
WO2007091212A1 (en) * | 2006-02-10 | 2007-08-16 | Nxp B.V. | Power amplifier |
US7920029B2 (en) | 2006-02-10 | 2011-04-05 | Nxp B.V. | Power amplifier |
WO2014004241A2 (en) * | 2012-06-25 | 2014-01-03 | Eta Devices, Inc. | Rf energy recovery system and related techniques |
WO2014004241A3 (en) * | 2012-06-25 | 2014-03-27 | Eta Devices, Inc. | Rf energy recovery system and related techniques |
US8830709B2 (en) | 2012-06-25 | 2014-09-09 | Eta Devices, Inc. | Transmission-line resistance compression networks and related techniques |
US8830710B2 (en) | 2012-06-25 | 2014-09-09 | Eta Devices, Inc. | RF energy recovery system |
US9531291B2 (en) | 2012-06-25 | 2016-12-27 | Eta Devices, Inc. | Transmission-line resistance compression networks and related techniques |
CN104052409A (en) * | 2013-03-15 | 2014-09-17 | 美国亚德诺半导体公司 | All digital zero-voltage switching |
EP2779443A3 (en) * | 2013-03-15 | 2014-11-19 | Analog Devices, Inc. | All digital zero-voltage switching |
US9281788B2 (en) | 2013-03-15 | 2016-03-08 | Analog Devices, Inc. | All digital zero-voltage switching |
US10056924B2 (en) | 2013-08-19 | 2018-08-21 | Analog Devices, Inc. | High output power digital-to-analog converter system |
USRE47601E1 (en) | 2013-08-19 | 2019-09-10 | Analog Devices, Inc. | High output power digital-to-analog converter system |
Also Published As
Publication number | Publication date |
---|---|
CN1371545A (en) | 2002-09-25 |
WO2001010013A9 (en) | 2002-09-06 |
KR20020059343A (en) | 2002-07-12 |
AU6615700A (en) | 2001-02-19 |
EP1201024A1 (en) | 2002-05-02 |
CN1249912C (en) | 2006-04-05 |
JP2003506941A (en) | 2003-02-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6636112B1 (en) | High-efficiency modulating RF amplifier | |
US6816016B2 (en) | High-efficiency modulating RF amplifier | |
EP1201024A1 (en) | High-efficiency modulating rf amplifier | |
US6377784B2 (en) | High-efficiency modulation RF amplifier | |
US6864668B1 (en) | High-efficiency amplifier output level and burst control | |
US7728662B2 (en) | Saturated power amplifier with selectable and variable output power levels | |
US7265618B1 (en) | RF power amplifier having high power-added efficiency | |
CN101179257B (en) | High-frequency power amplifier improved in size and cost | |
US20040108901A1 (en) | Linear power amplifier with multiple output power levels | |
JP6680235B2 (en) | Power amplifier circuit and high frequency module | |
Banerjee et al. | High efficiency multi-mode outphasing RF power amplifier in 45nm CMOS | |
JPH11220338A (en) | High frequency power amplifier | |
KR100226227B1 (en) | Self-oscillation type delta modulation d-type audio amplifier | |
US20070060074A1 (en) | High-efficiency modulating RF amplifier | |
Cijvat et al. | A GaN HEMT power amplifier with variable gate bias for envelope and phase signals | |
Yousefi et al. | A 1.8 GHz Power Amplifier Class-E with Good Average Power Added Efficiency | |
Cantrell | Circuit to aid tuning of class-E amplifier | |
Hella et al. | Design of integrated CMOS power amplifiers for wireless transceivers | |
Cijvat et al. | A comparison of polar transmitter architectures using a GaN HEMT power amplifier |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A1 Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CR CU CZ DE DK DM DZ EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ PL PT RO RU SD SE SG SI SL TJ TM TR TT TZ UA UG US UZ VN YU ZA ZW |
|
AL | Designated countries for regional patents |
Kind code of ref document: A1 Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE BF BJ CF CG CI CM GA GN GW ML MR NE SN TD TG |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
DFPE | Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101) | ||
WWE | Wipo information: entry into national phase |
Ref document number: 2000953760 Country of ref document: EP Ref document number: IN/PCT/2002/101/KOL Country of ref document: IN |
|
WWE | Wipo information: entry into national phase |
Ref document number: 1020027001158 Country of ref document: KR |
|
WWE | Wipo information: entry into national phase |
Ref document number: 008120587 Country of ref document: CN |
|
WWP | Wipo information: published in national office |
Ref document number: 2000953760 Country of ref document: EP |
|
REG | Reference to national code |
Ref country code: DE Ref legal event code: 8642 |
|
WWP | Wipo information: published in national office |
Ref document number: 1020027001158 Country of ref document: KR |
|
COP | Corrected version of pamphlet |
Free format text: PAGES 1-22, DESCRIPTION, REPLACED BY NEW PAGES 1-22; PAGES 23-26, CLAIMS, REPLACED BY NEW PAGES 23-26; PAGES 1/12-12/12, DRAWINGS, REPLACED BY NEW PAGES 1/12-12/12; DUE TO LATE TRANSMITTAL BY THE RECEIVING OFFICE |
|
WWW | Wipo information: withdrawn in national office |
Ref document number: 2000953760 Country of ref document: EP |