WO2000079019A1 - Apparatus for atomic layer chemical vapor deposition - Google Patents
Apparatus for atomic layer chemical vapor deposition Download PDFInfo
- Publication number
- WO2000079019A1 WO2000079019A1 PCT/US2000/017202 US0017202W WO0079019A1 WO 2000079019 A1 WO2000079019 A1 WO 2000079019A1 US 0017202 W US0017202 W US 0017202W WO 0079019 A1 WO0079019 A1 WO 0079019A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- substrate
- gas
- injection tube
- tube
- injector
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45519—Inert gas curtains
- C23C16/45521—Inert gas curtains the gas, other than thermal contact gas, being introduced the rear of the substrate to flow around its periphery
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
- C23C16/45551—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction for relative movement of the substrate and the gas injectors or half-reaction reactor compartments
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45578—Elongated nozzles, tubes with holes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45587—Mechanical means for changing the gas flow
- C23C16/45589—Movable means, e.g. fans
Abstract
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU63367/00A AU6336700A (en) | 1999-06-24 | 2000-06-23 | Apparatus for atomic layer chemical vapor deposition |
EP00950239A EP1226286A4 (en) | 1999-06-24 | 2000-06-23 | Apparatus for atomic layer chemical vapor deposition |
US10/019,244 US6812157B1 (en) | 1999-06-24 | 2000-06-23 | Apparatus for atomic layer chemical vapor deposition |
JP2001505362A JP2003502878A (en) | 1999-06-24 | 2000-06-23 | Atomic layer chemical vapor deposition system |
US10/865,111 US20040224504A1 (en) | 2000-06-23 | 2004-06-09 | Apparatus and method for plasma enhanced monolayer processing |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14111199P | 1999-06-24 | 1999-06-24 | |
US60/141,111 | 1999-06-24 |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/019,244 A-371-Of-International US6812157B1 (en) | 1999-06-24 | 2000-06-23 | Apparatus for atomic layer chemical vapor deposition |
US10/370,883 Continuation-In-Part US20040129212A1 (en) | 2002-05-20 | 2003-02-21 | Apparatus and method for delivery of reactive chemical precursors to the surface to be treated |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2000079019A1 true WO2000079019A1 (en) | 2000-12-28 |
Family
ID=22494205
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2000/017202 WO2000079019A1 (en) | 1999-06-24 | 2000-06-23 | Apparatus for atomic layer chemical vapor deposition |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP1226286A4 (en) |
JP (1) | JP2003502878A (en) |
AU (1) | AU6336700A (en) |
WO (1) | WO2000079019A1 (en) |
Cited By (44)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002070779A1 (en) * | 2001-03-02 | 2002-09-12 | Applied Materials, Inc. | Apparatus and method for sequential deposition of films |
US6620723B1 (en) | 2000-06-27 | 2003-09-16 | Applied Materials, Inc. | Formation of boride barrier layers using chemisorption techniques |
US6620670B2 (en) | 2002-01-18 | 2003-09-16 | Applied Materials, Inc. | Process conditions and precursors for atomic layer deposition (ALD) of AL2O3 |
KR100399067B1 (en) * | 2000-12-30 | 2003-09-26 | 주식회사 하이닉스반도체 | Apparatus for atomic layer deposition |
EP1357583A1 (en) * | 2001-01-09 | 2003-10-29 | Tokyo Electron Limited | Sheet-fed treating device |
US6660126B2 (en) | 2001-03-02 | 2003-12-09 | Applied Materials, Inc. | Lid assembly for a processing system to facilitate sequential deposition techniques |
US6720027B2 (en) | 2002-04-08 | 2004-04-13 | Applied Materials, Inc. | Cyclical deposition of a variable content titanium silicon nitride layer |
US6729824B2 (en) | 2001-12-14 | 2004-05-04 | Applied Materials, Inc. | Dual robot processing system |
US6734020B2 (en) | 2001-03-07 | 2004-05-11 | Applied Materials, Inc. | Valve control system for atomic layer deposition chamber |
US6756318B2 (en) | 2001-09-10 | 2004-06-29 | Tegal Corporation | Nanolayer thick film processing system and method |
US6765178B2 (en) | 2000-12-29 | 2004-07-20 | Applied Materials, Inc. | Chamber for uniform substrate heating |
US6811814B2 (en) | 2001-01-16 | 2004-11-02 | Applied Materials, Inc. | Method for growing thin films by catalytic enhancement |
US6821347B2 (en) | 2002-07-08 | 2004-11-23 | Micron Technology, Inc. | Apparatus and method for depositing materials onto microelectronic workpieces |
US6825447B2 (en) | 2000-12-29 | 2004-11-30 | Applied Materials, Inc. | Apparatus and method for uniform substrate heating and contaminate collection |
US6827978B2 (en) | 2002-02-11 | 2004-12-07 | Applied Materials, Inc. | Deposition of tungsten films |
US6833161B2 (en) | 2002-02-26 | 2004-12-21 | Applied Materials, Inc. | Cyclical deposition of tungsten nitride for metal oxide gate electrode |
US6838114B2 (en) | 2002-05-24 | 2005-01-04 | Micron Technology, Inc. | Methods for controlling gas pulsing in processes for depositing materials onto micro-device workpieces |
US6861094B2 (en) | 2002-04-25 | 2005-03-01 | Micron Technology, Inc. | Methods for forming thin layers of materials on micro-device workpieces |
DE10345824A1 (en) * | 2003-09-30 | 2005-05-04 | Infineon Technologies Ag | Arrangement for depositing atomic layers onto substrates used in the production of semiconductors comprises a source for trimethylaluminum vapor and a source for water connected together |
DE102004030138A1 (en) * | 2004-06-22 | 2005-12-08 | Infineon Technologies Ag | Atomic layer deposition unit comprises a reactor chamber with a substrate holder, a heater, a pump and a carrier gas source |
US7055263B2 (en) | 2003-11-25 | 2006-06-06 | Air Products And Chemicals, Inc. | Method for cleaning deposition chambers for high dielectric constant materials |
US7118783B2 (en) | 2002-06-26 | 2006-10-10 | Micron Technology, Inc. | Methods and apparatus for vapor processing of micro-device workpieces |
US7189287B2 (en) | 2004-06-29 | 2007-03-13 | Micron Technology, Inc. | Atomic layer deposition using electron bombardment |
CN1312757C (en) * | 2001-05-31 | 2007-04-25 | 三星电子株式会社 | Method for forming film using atomic layer deposition |
US7357138B2 (en) | 2002-07-18 | 2008-04-15 | Air Products And Chemicals, Inc. | Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials |
US7537662B2 (en) | 2003-04-29 | 2009-05-26 | Asm International N.V. | Method and apparatus for depositing thin films on a surface |
US7547860B2 (en) * | 2002-01-10 | 2009-06-16 | Tokyo Electron Limited | Microwave plasma processing apparatus for semiconductor element production |
US7601223B2 (en) | 2003-04-29 | 2009-10-13 | Asm International N.V. | Showerhead assembly and ALD methods |
CN1643179B (en) * | 2002-01-17 | 2010-05-26 | 松德沃技术公司 | ALD device and method |
US7754013B2 (en) | 2002-12-05 | 2010-07-13 | Asm International N.V. | Apparatus and method for atomic layer deposition on substrates |
US7780788B2 (en) | 2001-10-26 | 2010-08-24 | Applied Materials, Inc. | Gas delivery apparatus for atomic layer deposition |
US7905959B2 (en) | 2001-07-16 | 2011-03-15 | Applied Materials, Inc. | Lid assembly for a processing system to facilitate sequential deposition techniques |
US8384192B2 (en) | 2004-01-28 | 2013-02-26 | Micron Technology, Inc. | Methods for forming small-scale capacitor structures |
US8518184B2 (en) | 2003-12-10 | 2013-08-27 | Micron Technology, Inc. | Methods and systems for controlling temperature during microfeature workpiece processing, E.G., CVD deposition |
US20130237063A1 (en) * | 2012-03-09 | 2013-09-12 | Seshasayee Varadarajan | Split pumping method, apparatus, and system |
US8658259B2 (en) | 2003-02-04 | 2014-02-25 | Asm International N.V. | Nanolayer deposition process |
US9012334B2 (en) | 2001-02-02 | 2015-04-21 | Applied Materials, Inc. | Formation of a tantalum-nitride layer |
US9023436B2 (en) | 2004-05-06 | 2015-05-05 | Micron Technology, Inc. | Methods for depositing material onto microfeature workpieces in reaction chambers and systems for depositing materials onto microfeature workpieces |
US9032906B2 (en) | 2005-11-04 | 2015-05-19 | Applied Materials, Inc. | Apparatus and process for plasma-enhanced atomic layer deposition |
US9121098B2 (en) | 2003-02-04 | 2015-09-01 | Asm International N.V. | NanoLayer Deposition process for composite films |
US9297072B2 (en) | 2008-12-01 | 2016-03-29 | Tokyo Electron Limited | Film deposition apparatus |
US9708707B2 (en) | 2001-09-10 | 2017-07-18 | Asm International N.V. | Nanolayer deposition using bias power treatment |
CN107815668A (en) * | 2017-12-05 | 2018-03-20 | 南京工业大学 | A kind of rotation ald reactor modified towards hollow-fibre membrane batch |
CN114072538A (en) * | 2019-04-25 | 2022-02-18 | Beneq有限公司 | Precursor supply cabinet |
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JP2007100191A (en) * | 2005-10-06 | 2007-04-19 | Horiba Ltd | Apparatus and method for forming monolayer |
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US8129288B2 (en) * | 2008-05-02 | 2012-03-06 | Intermolecular, Inc. | Combinatorial plasma enhanced deposition techniques |
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JP5011355B2 (en) * | 2009-07-30 | 2012-08-29 | 東京エレクトロン株式会社 | Deposition method |
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JP5742185B2 (en) * | 2010-03-19 | 2015-07-01 | 東京エレクトロン株式会社 | Film forming apparatus, film forming method, rotation speed optimization method, and storage medium |
JP2017139263A (en) * | 2016-02-01 | 2017-08-10 | 株式会社東芝 | Semiconductor device manufacturing method |
JP6707676B2 (en) * | 2019-01-07 | 2020-06-10 | 東芝デバイス&ストレージ株式会社 | Method of manufacturing semiconductor device |
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US5443647A (en) * | 1993-04-28 | 1995-08-22 | The United States Of America As Represented By The Secretary Of The Army | Method and apparatus for depositing a refractory thin film by chemical vapor deposition |
US5456945A (en) * | 1988-12-27 | 1995-10-10 | Symetrix Corporation | Method and apparatus for material deposition |
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2000
- 2000-06-23 WO PCT/US2000/017202 patent/WO2000079019A1/en active Application Filing
- 2000-06-23 JP JP2001505362A patent/JP2003502878A/en active Pending
- 2000-06-23 EP EP00950239A patent/EP1226286A4/en not_active Withdrawn
- 2000-06-23 AU AU63367/00A patent/AU6336700A/en not_active Abandoned
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US5716484A (en) * | 1993-10-29 | 1998-02-10 | Applied Materials, Inc. | Contaminant reduction improvements for plasma etch chambers |
US5637146A (en) * | 1995-03-30 | 1997-06-10 | Saturn Cosmos Co., Ltd. | Method for the growth of nitride based semiconductors and its apparatus |
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Title |
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Cited By (54)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6620723B1 (en) | 2000-06-27 | 2003-09-16 | Applied Materials, Inc. | Formation of boride barrier layers using chemisorption techniques |
US6765178B2 (en) | 2000-12-29 | 2004-07-20 | Applied Materials, Inc. | Chamber for uniform substrate heating |
US6825447B2 (en) | 2000-12-29 | 2004-11-30 | Applied Materials, Inc. | Apparatus and method for uniform substrate heating and contaminate collection |
KR100399067B1 (en) * | 2000-12-30 | 2003-09-26 | 주식회사 하이닉스반도체 | Apparatus for atomic layer deposition |
US7232502B2 (en) | 2001-01-09 | 2007-06-19 | Tokyo Electron Limited | Sheet-fed treating device |
EP1357583A4 (en) * | 2001-01-09 | 2005-05-25 | Tokyo Electron Ltd | Sheet-fed treating device |
EP1357583A1 (en) * | 2001-01-09 | 2003-10-29 | Tokyo Electron Limited | Sheet-fed treating device |
US6811814B2 (en) | 2001-01-16 | 2004-11-02 | Applied Materials, Inc. | Method for growing thin films by catalytic enhancement |
US9012334B2 (en) | 2001-02-02 | 2015-04-21 | Applied Materials, Inc. | Formation of a tantalum-nitride layer |
US9587310B2 (en) | 2001-03-02 | 2017-03-07 | Applied Materials, Inc. | Lid assembly for a processing system to facilitate sequential deposition techniques |
WO2002070779A1 (en) * | 2001-03-02 | 2002-09-12 | Applied Materials, Inc. | Apparatus and method for sequential deposition of films |
US6660126B2 (en) | 2001-03-02 | 2003-12-09 | Applied Materials, Inc. | Lid assembly for a processing system to facilitate sequential deposition techniques |
US6734020B2 (en) | 2001-03-07 | 2004-05-11 | Applied Materials, Inc. | Valve control system for atomic layer deposition chamber |
CN1312757C (en) * | 2001-05-31 | 2007-04-25 | 三星电子株式会社 | Method for forming film using atomic layer deposition |
US7905959B2 (en) | 2001-07-16 | 2011-03-15 | Applied Materials, Inc. | Lid assembly for a processing system to facilitate sequential deposition techniques |
US10280509B2 (en) | 2001-07-16 | 2019-05-07 | Applied Materials, Inc. | Lid assembly for a processing system to facilitate sequential deposition techniques |
US6756318B2 (en) | 2001-09-10 | 2004-06-29 | Tegal Corporation | Nanolayer thick film processing system and method |
US9708707B2 (en) | 2001-09-10 | 2017-07-18 | Asm International N.V. | Nanolayer deposition using bias power treatment |
US7780788B2 (en) | 2001-10-26 | 2010-08-24 | Applied Materials, Inc. | Gas delivery apparatus for atomic layer deposition |
US6729824B2 (en) | 2001-12-14 | 2004-05-04 | Applied Materials, Inc. | Dual robot processing system |
US7547860B2 (en) * | 2002-01-10 | 2009-06-16 | Tokyo Electron Limited | Microwave plasma processing apparatus for semiconductor element production |
CN1643179B (en) * | 2002-01-17 | 2010-05-26 | 松德沃技术公司 | ALD device and method |
US6620670B2 (en) | 2002-01-18 | 2003-09-16 | Applied Materials, Inc. | Process conditions and precursors for atomic layer deposition (ALD) of AL2O3 |
US6827978B2 (en) | 2002-02-11 | 2004-12-07 | Applied Materials, Inc. | Deposition of tungsten films |
US6833161B2 (en) | 2002-02-26 | 2004-12-21 | Applied Materials, Inc. | Cyclical deposition of tungsten nitride for metal oxide gate electrode |
US6720027B2 (en) | 2002-04-08 | 2004-04-13 | Applied Materials, Inc. | Cyclical deposition of a variable content titanium silicon nitride layer |
US6861094B2 (en) | 2002-04-25 | 2005-03-01 | Micron Technology, Inc. | Methods for forming thin layers of materials on micro-device workpieces |
US6838114B2 (en) | 2002-05-24 | 2005-01-04 | Micron Technology, Inc. | Methods for controlling gas pulsing in processes for depositing materials onto micro-device workpieces |
US7118783B2 (en) | 2002-06-26 | 2006-10-10 | Micron Technology, Inc. | Methods and apparatus for vapor processing of micro-device workpieces |
US6821347B2 (en) | 2002-07-08 | 2004-11-23 | Micron Technology, Inc. | Apparatus and method for depositing materials onto microelectronic workpieces |
US7357138B2 (en) | 2002-07-18 | 2008-04-15 | Air Products And Chemicals, Inc. | Method for etching high dielectric constant materials and for cleaning deposition chambers for high dielectric constant materials |
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Also Published As
Publication number | Publication date |
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JP2003502878A (en) | 2003-01-21 |
EP1226286A4 (en) | 2007-08-15 |
EP1226286A1 (en) | 2002-07-31 |
AU6336700A (en) | 2001-01-09 |
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