WO2000074110A2 - Integrated circuit wafer probe card assembly - Google Patents
Integrated circuit wafer probe card assembly Download PDFInfo
- Publication number
- WO2000074110A2 WO2000074110A2 PCT/US2000/014164 US0014164W WO0074110A2 WO 2000074110 A2 WO2000074110 A2 WO 2000074110A2 US 0014164 W US0014164 W US 0014164W WO 0074110 A2 WO0074110 A2 WO 0074110A2
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- WO
- WIPO (PCT)
- Prior art keywords
- substrate
- probe
- probe card
- connector
- spring
- Prior art date
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/073—Multiple probes
- G01R1/07307—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
- G01R1/07342—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card the body of the probe being at an angle other than perpendicular to test object, e.g. probe card
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
- G01R1/02—General constructional details
- G01R1/06—Measuring leads; Measuring probes
- G01R1/067—Measuring probes
- G01R1/073—Multiple probes
- G01R1/07307—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
- G01R1/07364—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card with provisions for altering position, number or connection of probe tips; Adapting to differences in pitch
- G01R1/07378—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card with provisions for altering position, number or connection of probe tips; Adapting to differences in pitch using an intermediate adapter, e.g. space transformers
Definitions
- the invention relates to the field of probe card assembly systems. More particularly, the invention relates to improvements in photolithography- patterned spring contacts and enhanced probe card assemblies having photolithography-patterned spring contacts for use in the testing or bum-in of integrated circuits
- U.S. Patent No. 5,166,774 disclose a runner and substrate assembly which comprises "a plurality of conductive runners adhered to a substrate, a portion of at least some of the conductive runners have non-planar areas with the substrate for selectively releasing the conductive runner from the substrate when subjected to a predetermined stress".
- U.S Patent No. 5,280,139 (18 January 1994) disclose a runner and substrate assembly which comprises "a plurality of conductive runners adhered to a substrate, a portion of at least some of the conductive runners have a lower adhesion to the substrate for selectively releasing the conductive runner from the substrate when subjected to a predetermined stress " .
- D. Pedder, Bare Die Testing, U.S. Patent No. 5,786,701 disclose a testing apparatus for testing integrated circuits (ICs) at the bare die stage, which includes "a testing station at which microbumps of conductive mate ⁇ al are located on interconnection trace terminations of a multilayer interconnection structure, these terminations being distributed in a pattern corresponding to the pattern of contact pads on the die to be tested.
- a testing station at which microbumps of conductive mate ⁇ al are located on interconnection trace terminations of a multilayer interconnection structure, these terminations being distributed in a pattern corresponding to the pattern of contact pads on the die to be tested.
- the other connections provided to and from the interconnection structure have a low profile".
- the connector includes a platform with cantilevered spring arms extending obliquely outwardly therefrom.
- the spring arms include raised contact surfaces and in one embodiment, the geometry of the arms provide compound wipe du ⁇ ng deflection".
- test device for testing an integrated circuit (IC) chip having side edge portions each provided with a set of lead pins.
- the test device comprises a socket base, contact units each including a contact support member and socket contact numbers, and anisotropic conductive sheet assemblies each including an elastic insulation sheet and conductive members.
- the anisotropic conductive sheet assemblies are arranged to hold each conductive member in contact with one of the socket contact members of the contact units.
- the test device further comprises a contact retainer detachably mounted on the socket base to bring the socket contact members into contact with the anisotropic sheet assemblies to establish elect ⁇ cal communication between the socket contact members and the conductive members of the anisotropic conductive sheet assemblies.
- Each of the contact units can be replaced by a new contact unit if the socket contact members partly become fatigued, thereby making it possible to facilitate the maintenance of the test device
- the lead pins of the IC chip can be electrically connected to a test circuit board with the shortest paths formed by part of the socket contact members and the conductive members of the anisotropic conductive sheet assemblies".
- Patent No 4 758.9278 (1 9 July 1988) discloses ' a substrate structure having contact pads is mounted to a circuit board which has pads of conductive material exposed at one main face of the board and has registration features which are in predetermined positions relative to the contact pads of the circuit board.
- the substrate structure is provided with leads which are elect ⁇ cally connected to the contact pads of the substrate structure and project from the substrate structure in cantilever fashion.
- a registration element has a plate portion and also has registration features which are distributed about the plate portion and are engageable with the registration features of the circuit board, and when so engaged maintain the registration element against movement parallel to the general plane of the circuit board
- the substrate structure is attached to the plate portion of the registration element so that the leads are ri predetermined position relative to the registration features of the circuit board, and in this position of the registration element the leads of the substrate structure overlie the contact pads of the circuit board
- a clamp member maintains the leads in elect ⁇ cally conductive pressure contact with the contact pads of the circuit board".
- compositions useful for printing controllable adhesion conductive patterns on a printed circuit board include finely divided copper powder, a screening agent and a binder
- the binder is designed to provide controllable adhesion of the copper layer formed after sinte ⁇ ng to the substrate, so that the layer can lift off the substrate in response to thermal stress Additionally, the binder serves to promote good cohesion between the copper particles to provide good mechanical strength to the copper layer so that it can tolerate lift off without fracture"
- Such a switch includes a cantilever actuator member comprising a resiliency bendable strip of a hard insulating mate ⁇ al (e.g. silicon nitride) to which a metal (e.g. nickel) heating element is bonded.
- a hard insulating mate ⁇ al e.g. silicon nitride
- the free end of the cantilever member car ⁇ es a metal contact, which is moved onto (or out of) engagement with an underlying fixed contact by controlled bending of the member via electrical current applied to the heating element" .
- U.S. Patent No. 5,416.429 (16 May 1995) disclose a probe assembly for testing an integrated circuit, which "includes a probe card of insulating mate ⁇ al with a central opening, a rectangular frame with a smaller opening attached to the probe card, four separate probe wings each comprising a flexible laminated member having a conductive ground plane sheet, an adhesive dielect ⁇ c film adhered to the ground plane, and probe wing traces of sp ⁇ ng alloy copper on the dielect ⁇ c film.
- Each probe wing has a cantilevered leaf spring portion extending into the central opening and terminates in a group of aligned individual probe fingers provided by respective terminating ends of said probe wing traces.
- the probe fingers have tips disposed substantially along a straight line and are spaced to correspond to the spacing of respective contact pads along the edge of an IC being tested.
- Four spring clamps each have a cantilevered portion which contact the leaf spring portion of a respective probe wing, so as to provide an adjustable restraint for one of the leaf spring portions.
- the separate spring clamp adjusting means comprise spring biased platforms each attached to the frame member by three screws and spring washers so that the spring clamps may be moved and oriented in any desired direction to achieve alignment of the position of the probe finger tips on each probe wing".
- Patent No. 5,764.070 (09 June 1 998) discloses a test probe structure for making connections to a bare IC or a wafer to be tested, which comprises "a multilayer printed circuit probe arm which carries at its tip an MCM-D type substrate having a row of microbumps on its underside to make the required connections.
- the probe arm is supported at a shallow angle to the surface of the device or wafer, and the MCM-D type substrate is formed with the necessary passive components to interface with the device under test.
- Four such probe arms may be provided, one on each side of the device under test”.
- the semiconductor dies may be singulated from the semiconductor wafer, whereupon the same resilient contact structures can be used to effect interconnections between the semiconductor dies and other electronic components (such a wiring substrates, semiconductor packages, etc.).
- burn-in can be performed at temperatures of at least 150° C. and can be completed in less than 60 minutes". While the contact tip structures disclosed by B. Eldridge et al.
- the structures are each individually mounted onto bond pads on semiconductor dies, requinng complex and costly fab ⁇ cation
- the contact tip structures are fabricated from wire, which often limits the resulting geometry for the tips of the contacts.
- such contact tip structures have not been able to meet the needs of small pitch applications (e.g. typically on the order of 50 ⁇ m spacing for a peripheral probe card, or on the order of 75 ⁇ m spacing for an area array).
- pressure contact is made between the resilient contact structures and external connection points of the semiconductor package with a contact force which is generally normal to the top surface of the support substrate.
- pressure contact is made between the resilient contact structures and external connection points of the semiconductor package with a contact force which is generally parallel to the top surface of the support substrate
- the spring contact is made of an elastic mate ⁇ al and the free portion compliantly contacts a second contact pad, thereby contacting the two contact pads" While the photolithography patterned springs, as disclosed by Smith et al., are capable of satisfying many IC probing needs, the springs are small, and provide little vertical compliance to handle the piana ⁇ ty compliance needed in the reliable operation of many current IC prober systems Vertical compliance for many probing systems is typically on the order of 0.004" - 0.010", which often requires the use of tungsten needle probes
- integrated circuit probe card assemblies which extend the mechanical compliance of both MEMS and thin- film fabricated probes, such that these types of spring probe structures can be used to test one or more integrated circuits on a semiconductor wafer.
- probe card assemblies which provide tight signal pad pitch and compliance, preferably enabling the parallel testing or burn-in of multiple ICs, using commercial wafer probing equipment.
- the probe card assembly structures include separable standard elect ⁇ cal connector components which reduces assembly manufactu ⁇ ng cost and manufactu ⁇ ng time These structures and assemblies enable high speed testing in wafer form
- the probes preferably include mechanical protection for both the integrated circuits and the MEMS or thin film fabricated spring tips Interleaved spring probe tip designs are defined which allow multiple probe contacts on very small integrated circuit pads.
- the shapes of probe tips are preferably defined to control the depth of probe tip penetration between a probe spring and a pad or trace on an integrated circuit device Improved protective coating techniques for spring probes are also disclosed, offering increased quality and extended useful service lives for probe card assemblies BRIEF DESCRIPTION OF THE DRA WINGS
- Figure 1 is a plan view of a linear array of photolithographically patterned sp ⁇ ngs, prior to release from a substrate;
- Figure 2 is a perspective view of a linear array of photolithographically patterned springs, after release from a substrate;
- Figure 3 is a side view of a first, short length photolithographically patterned l o sp ⁇ ng, having a first effective radius and height after the short length spring is released from a substrate;
- Figure 4 is a side view of a second, long length photolithographically patterned spring having a second large effective radius and height after the 15 long length spring is released from a substrate;
- Figure 5 is a perspective view of opposing photolithographic springs, having an interleaved spring tip pattern, before the springs are released from a substrate; 0
- Figure 6 is a perspective view of opposing photolithographic springs, having an interleaved spring tip pattem. after the springs are released from a substrate;
- Figure 7 is a top view of opposing pairs of interleaved multiple-point photolithographic probe springs, in contact with a single trace on an integrated circuit device,
- Figure 8 is a plan view of opposing single-point photolithographic probe 0 springs, before the springs are released from a substrate,
- Figure 9 is a top view of parallel and opposing single-point photolithographic probe springs, after the springs are released from a substrate, in contact with a single pad on an integrated circuit device, 5
- Figure 10 is a front view of a shoulder-point photolithographic probe spring
- Figure 1 1 is a partial cross-sectional side view of a shoulder-point photolithographic sp ⁇ ng in contact with a trace on an integrated circuit device
- Figure 12 is a perspective view of a multiple shoulder-point photolithographic probe spring
- Figure 13 is a cross-sectional view of a probe card assembly, wherein a plurality of photolithographic spring probes on a lower surface of a substrate are elect ⁇ cally connected to flexible connections on the upper surface of the substrate, and wherein the flexible connections are connected to a printed wiring board probe card;
- Figure 14 is a partial expanded cross-sectional view of a probe card assembly which shows staged pitch and fan-out across a substrate and a printed wiring board probe card:
- Figure 15 is a first partial cross-sectional view of a bridge and leaf sp ⁇ ng suspended probe card assembly
- Figure 16 is a second partial cross-sectional view of a bridge and leaf sp ⁇ ng suspended probe card assembly in contact with a device under test (DUT);
- Figure 17 is a partially expanded assembly view of a bridge and leaf sp ⁇ ng suspended probe card assembly
- Figure 18 is a first partial cross-sectional view of a bridge and leaf sp ⁇ ng suspended probe card assembly, having an intermediate daughter card detachably connected to the probe card substrate, and wherein the probe sp ⁇ ng substrate is detachably connected to the bridge structure;
- Figure 19 is a second partial cross-sectional view of the bridge and leaf spring suspended probe card assembly shown in contact with a device under test (DUT),
- DUT device under test
- Figure 20 is a cross-sectional view of a wire and sp ⁇ ng post suspended probe card assembly
- Figure 21 is a cross-sectional view of a suspended probe card assembly having an intermediate daughter card detachably connected to the probe card substrate, and wherein the probe spring substrate is mechanically and electrically connected to the bridge structure by flexible interconnections;
- Figure 22 is a cross-sectional view of a probe card assembly, wherein a nano-sp ⁇ ng substrate is directly connected to a probe card substrate by an array connector.
- Figure 23 is a cross-sectional view of a wire suspended probe card assembly, wherein a nano-sp ⁇ ng substrate is connected to a probe card substrate by an LGA interposer connector;
- Figure 24 is a cross-sectional view of a small test area probe card assembly, having one or more connectors between a probe card and a daughter card, n which the daughter card is attached to a small area probe spring substrate b y a micro ball gnd solder array;
- Figure 25 is a top view of a substrate wafer, upon which a plurality of micro ball grid array probe spring contactor chip substrates are laid out;
- Figure 26 is a top view of a single pitch micro ball grid array nano-sp ⁇ ng contactor chip
- Figure 27 is a plan view of a tiled probe strip having a plurality of probe strip contact areas
- Figure 28 is a bottom view of a plurality of tiled probe strips attached to a probe card support substrate
- Figure 29 is a side view of a plurality of tiled probe strips attached to a probe card support substrate
- Figure 30 is a cross-sectional view of a structure which allows a plurality of integrated circuits to be temporarily connected to a bum-in board, through a plurality of probe spring contacts
- Figure 31 is a view of a first step of a sp ⁇ ng probe assembly coating process, in which a protective coating is applied to a probe surface of a spring probe assembly;
- Figure 32 is a view of a second step of a spring probe assembly coating process, in which a layer of photoresistive mate ⁇ al is applied to a second substrate;
- Figure 33 is a view of a third step of a spring probe assembly coating 10 process, in which a coated spring probe assembly is partially dipped into photoresistive material on a second substrate;
- Figure 34 is a view of a fourth step of a spring probe assembly coating process, in which a coated and partially dipped spring probe assembly is 15 removed from the second substrate;
- Figure 35 is a view of a fifth step of a spring probe assembly coating process, in which the coated and dipped spring probe assembly is etched, thereby removing the protective coating from portions of the substrate not 20 dipped in the photo-resist;
- Figure 36 is a view of a sixth step of a spring probe assembly coating process, in which photo-resist is stripped from the spring tips on the spring probe assembly, exposing the protective coating;
- Figure 37 is a partial cross-sectional view of a reference plane layered spring probe substrate
- Figure 1 is a plan view 1 0 of a linear array 12 of photolithographically patterned springs 14a-14n, prior to release from a substrate 16.
- the conductive springs 14a-14n are typically formed on the substrate layer 16, by successive layers of deposited metal, such as through low and high 35 energy plasma deposition processes, followed by photolithographic patterning, as is widely known in the semiconductor industry The successive layers have different inherent levels of stress.
- the release regions 18 of the substrate 1 6 are then processed by undercut etching whereby portions of the sp ⁇ ng contacts 14a-14n located over the release region 18, are released from the substrate 16 and extend (i.e. bend) away from the substrate 16, as a result of the inherent stresses between the deposited metallic layers.
- Fixed regions 15 (FIG.
- FIG 4 is a perspective view 22 of a linear array 12 of photolithographically patterned springs 14a-14n, after release from a substrate 16
- the spring contacts 14a-14n may be formed in high density arrays, with a fine pitch 20. currently on the order of 0.001 inch.
- Figure 3 is a side view 26a of a first photolithographically patterned spring 14 having a short length 28a. which is formed to define a first effective spring angle 30a, spring radius 31a, and spring height 32a. after the patterned spring 14 is released from the release region 18a of the substrate 16 away from the
- FIG. 15 planar anchor region 15 Figure 4 is a side view 26b of a second photolithographically patterned spring 14 having a long spring length 28b, which is formed to define a second large effective spring angle 30b, spring radius 31 b and spring height 32b, after the patterned spring 14 is released from the release region 18b of the substrate 16
- the effective geometry of 0 the formed spring tips 14 is highly customizable, based upon the intended application As well, the spring tips are typically flexible, which allows them to be used for many applications
- Patterned probe springs 14 are capable of very small spring to spring pitch 5 20, which allows multiple probe springs 14 to be used to contact power or ground pads on an integrated circuit device 44 (FIG 13), thereby improving current carrying capability
- multiple probe springs 14 may be used to probe I/O pads on an integrated circuit device 44 under test (DUT), thus allowing 0 every contact 14 to be verified for continuity after engagement of the spring contacts 14 to the wafer 92 under test, thereby ensu ⁇ ng complete elect ⁇ cal contact between a probe card assembly and a device 44. before testing procedures begin
- Figure 5 Improved Structures for Miniature Springs.
- Figure 5 is a first perspective view of opposing photolithographic springs 34a, 34b having an interleaved spring tip pattern, before spring to substrate detachment
- Figure 6 is a perspective view of opposing interleaved photolithographic springs 34a, 34b. after spring to substrate detachment
- the interieaved photolithographic springs 34a, 34b each have a plurality of spring contact points 24 When spring contacts are used for connection to power or ground traces 46 or pads 47 of an integrated circuit device 44, the greatest elect ⁇ cal resistance occurs at the point of contact. Therefore, an interleaved sp ⁇ ng contact 34, having a plurality of contact points 24, inherently lowers the resistance between the spring contact 34 and a trace 46 or pad 47. As described above, multiple interleaved probe springs 34 may b e used for many applications, such as for high quality elect ⁇ cal connections for an integrated circuit device 44, or for a probe card assembly 60 (FIG 13), such as for probing an integrated circuit device 44 dunng testing
- Figure 7 is a perspective view 42 of opposing interleaved photolithographic spring pairs 34a, 34b in contact with single traces 46 on an integrated circuit device under test (DUT) 44
- the interleaved spring contact pair 34a and 34b allows both springs 34a and 34b, each having a plurality of contact points 24, to contact the same trace 46.
- a zig-zag gap 38 is formed between the two springs 34a, 34b on a substrate 16
- multiple tips 24 are established on each sp ⁇ ng 34a,34b
- the interleaved points 24 are located within an overlapping interleave region 36.
- each interleaved spring probes 34a.34b When the interleaved spring probes 34a.34b are detached from the substrate 1 6, the interleaved spring points 24 remain in close proximity to each other within a contact region 40. which is defined between the springs 34a, 34b
- the interleaved spring contact pair 34a and 34b may then be positioned, such that both interleaved spring probes 34a and 34b contact the same trace 46, such as for a device under test 44, providing increased reliability
- each interleaved spring 34a, 34b includes multiple spring points 24, contact with a trace 46 is increased, while the potential for either overheating or current arcing across the multiple contact points 24 is minimized
- Figure 8 is a top view of parallel and opposing single-point photolithographic springs 14, before the springs 14 are released from a substrate 16 As described above for interleaved springs 34a. 34b, parallel springs 14 may also be placed such that the spring tips 24 of multiple springs contact a single trace 46 on a device 44 As well, opposing spring probes 14 may overlap each other on a substrate 16, such that upon release from the substrate 1 6 across a release region 18, the sp ⁇ ng tips 24 are located in close proximity to each other
- Figure 9 is a top view of parallel and opposing parallel single- point photolithographic springs 14, after the springs 14 are released from the substrate 16, wherein the parallel and opposing parallel single-point photolithographic springs 14 contact a single pad 47 on an integrated circuit device 44
- Figure 10 is a front view of a shoulder-point photolithographic sp ⁇ ng 50, having a point 52 extending from a shoulder 54
- Figure 1 1 is a partial cross- sectional side view of a shoulder-point photolithographic spring 50, in contact with a trace 46 on an integrated circuit device
- Figure 12 is a perspective view of a multiple shoulder-point photolithographic spring 50
- Single point sp ⁇ ng probes 14 typically provide good physical contact with conductive traces 46 on an integrated circuit device 22, often by penetrating existing oxide layers on traces 46 or pads 47 by a single, sha ⁇ probe tip 24 However, for semiconductor wafers 92 or integrated circuit devices having thin or relatively soft traces 46 or pads 47, a single long probe tip 24 may penetrate beyond the depth of the trace 46 such as into the IC substrate 48, or into other circuitry
- Shoulder-point photolithographic springs 50 therefore include one or more extending points 52, as well as a shoulder 54, wherein the points 52 provide desired penetration to provide good elect ⁇ cal contact to traces 46, while the shoulder 54 prevents the spring 50 from penetrating too deep into a device
- Figure 13 is a cross-sectional view 58 of a probe card assembly 60a, wherein a plurality of elect ⁇ cally conductive probe tips 61 a-61 n are located on a lower probe surface 62a of a substrate 16
- a plurality of flexible, elect ⁇ cally conductive connections 64a-64n are located on the upper connector surface 62b of the substrate 16, and are each connected to the plurality of elect ⁇ cally conductive springs probe tips 61 a- 61 n, by corresponding electrical connections 66a-66n
- the substrate 16 is typically a solid plate, and is preferably a mate ⁇ al having a low thermal coefficient of expansion (TCE), such as ceramic, ceramic glass, glass, or silicon
- TCE thermal coefficient of expansion
- the spring probe tips 61 a-61 n may have a variety of tip geometries, such as single point springs 14 interleaved springs 34, or shoulder point springs 50, and are fabricated on the substrate 1 6, typically using thin-film or M E M S processing methods, to achieve low manufactu ⁇ ng cost, well controlled uniformity, very fine pad pitches 20, and large pin counts
- the probe tips 61 a-61 n are elect ⁇ cally connected to flexible elect ⁇ c connections 64a-64n, preferably through metaiized vias 66a-66n within the substrate 16
- Each of the plurality of flexible elect ⁇ c connections 64a-64n are then elect ⁇ cally connected to a printed wi ⁇ ng board probe card 68, which is then typically held in place by a metal ring or frame support structure 70.
- the preferred metallized via elect ⁇ cal connections 66a-66n (e g. such as produced by Micro Substrate Corporation, of Tempe, Arizona), are typically formed b y first creating holes in the substrate 16, using laser or other drilling methods. The holes are then filled or plated with conductive mate ⁇ al. such as by plating or by extrusion After the conductive vias 66a-66n are formed, they are typically polished back, to provide a flat and smooth surface
- Figure 14 is a partial expanded cross-sectional view 79 of a probe card assembly 60a. which shows staged pitch and fan-out across a substrate 1 6 and a printed wi ⁇ ng board probe card 68
- the probe tips 61 a-61 n are typically arranged on the probe surface 62a of the substrate, with a fine spring pitch 20
- the fixed trace portions 15 are then preferably fanned out to the metaiized vias 66a-66n, which are typically arranged with a substrate pitch 81 .
- the elect ⁇ cally conductive connections 64a-64n, which are located on the upper connector surface 62b of the substrate 1 6 and are connected to the vias 66a-66n, are typically arranged with a connection pitch 83.
- the conductive pads 77a-77n on the underside of the printed wi ⁇ ng board probe card 68 are typically arranged with a pad pitch 85, such that the conductive pads 77a-77n are aligned with the elect ⁇ cally conductive connections 64a-64n located on the upper connector surface 62b of the substrate 16
- the conductive pads 77a-77n are then preferably fanned out to conductive paths 78a-78n, which are typically arranged with a probe card pitch 87
- the elect ⁇ cally conductive connections 72a-72n, which are located on the upper surface of the printed wi ⁇ ng board probe card 68 and are connected to the conductive paths 78a-78n, are typically arranged with a probe card connection pitch 89, which may be aligned with the probe card pitch 87, or may preferably be fanned out further on the upper surface of the printed
- the flexible eiect ⁇ c connections 64a-64n are typically fabricated using a longer spring length 28 than the probe tips 61 a-61 n, to provide a compliance of approximately 4-10 mils.
- the flexible connections 64a-64n are typically built in compliance to photolithographic springs, such as described above, or as disclosed in either U.S Patent No. 5,848,685 or U.S. Patent No 5.613,861 , which are incorporated herein by reference.
- the flexible connections 64a-64n are connected to the printed wi ⁇ ng board (PWB) probe card 68. either permanently (e g such as by solder or conductive epoxy) or non-permanently (e g such as by corresponding metal pads which mate to the tips 24 of flexible connection springs 64a-64n).
- the printed wiring board probe card 68 then fans out the signals to pads 72a-72n, on a pad pitch 89 suitable for standard pogo pin contactors 74a-74n typically arranged with a test head pitch 91 on a test head 76
- the flexible connections 64a-64n are preferably arranged within an area array, having an array pitch 83 such as 1 00 mm or 1 .27 mm, which provides a reasonable density (/ e. probe card pitch 87) for plated through-holes (PTH) 78 on the printed wiring board probe card 68, and allows signal fan-out on multiple layers within the p ⁇ nted wiring board probe card 68, without resorting to advanced printed wiring board probe cards 68 containing blind conductive
- the flexible conductive connections 64a-64n which contact conductive pads 77a-77n on the underside of the printed wiring board probe card 68, maintain electrical connection between the p ⁇ nted wi ⁇ ng board probe card 68 and the substrate 16, while the substrate 16 is allowed to move up and down slightly along the Z-axis 84.
- the flexible connections 64a-64n also provide lateral compliance between a substrate 16 and a printed wi ⁇ ng board probe card 68 having different thermal coefficients of expansion (e.g. such as for a low TCE substrate 16 and a relatively high TCE printed wiring board probe card 68).
- the substrate 16 may be an assembly, such as a membrane probe card, which connects to the printed wiring board probe card 68 through membrane bump contacts 64a-64n
- connections 64a-64n are provided by a separable connector
- FIG. 1 8 or preferably by a MEG-ArrayTM connector 162 (FIG. 24), from FCI Electronics, of Etters, PA, wherein ball g ⁇ d solder arrays located on opposing halves of the connector 1 32, 1 62 are soldered to matching conductive pads on the substrate 16 and printed wiring board probe card 68, and wherein the conductive pads are each arranged within an area array pattern, such that the opposing halves of the connector 132.162 provide a plurality of mating electrical connections between each of the plurality of spring probe tips 61 a-61 n and each of the plurality of conductive pads 77a-77n on the underside of the printed wiring board probe card 68.
- the probe card assembly 60a provides elect ⁇ cal interconnections to a substrate 16, which may contain thousands of spring probe tips 61 a-61 n, while providing adequate mechanical support for the probe card assembly 60a, to work effectively in a typical integrated circuit test probing environment.
- the probe card assembly 60a is readily used for applications requi ⁇ ng very high pin counts, for tight pitches, or for high frequencies.
- the probe card assembly 60a is easily adapted to provide elect ⁇ cal contact for all traces 46 (FIG. 7) and input and output pads 47 (FIG. 7, FIG. 9) of an integrated circuit device, for test probe applications which require access to the central region of an integrated circuit die 44.
- the probe card assembly 60a is typically positioned in relation to an a semiconductor wafer 92, having one or more integrated circuits 44, which are typically separated by saw streets 94.
- An X-axis 80 and a Y-axis 82 typically defines the location of a probe card assembly 60 across a semiconductor wafer 92 or device 44, while a Z-axis defines the vertical distance between the surface of the wafer 92 and the probe card assembly 60.
- Position of the wafer 92 under test, in relation to the test head 76 and the probe card assembly 60a is required to be precisely located in relation to the X-axis 80, the Y-Axis 82. and the Z-axis 84. as well as rotational Z-axis (i.e. theta) location 90 about the Z-axis 84.
- probe card assemblies it is increasingly important to allow probe card assemblies to provide contact with a planar semiconductor wafer 92, wherein the semiconductor wafer 92 and the probe card assembly are slightly non-planar to each other, such as by a slight variation in X-axis rotation 86 and/or Y-axis rotation 88.
- the probe tips 61 a-61 n are flexible, which inherently provides planarity compliance between the substrate 1 6 and the semiconductor wafer 92 As well, the flexible connections 64a-64n. which are also preferably flexible conductive springs
- the probe card assembly 60a therefore provides planarity compliance between a substrate 16 and an integrated circuit device 44 (i.e. such as by X-axis rotation 86 and/or Y-axis rotation 88).
- the probe card assembly 60a also accommodates differences ri thermal coefficients of expansion (TCE) between the substrate 1 6 (which is typically comprised of ceramic, ceramic glass, glass, or silicon) and the printed wi ⁇ ng board probe card 68 (which is typically comprised of glass e poxy mate ⁇ al).
- TCE thermal coefficients of expansion
- the signal traces from the probe tips 61 a-61 n, typically having a small pitch 20, are preferably fanned out to the flexible connections 64a-64n, typically having a larger pitch, using routing traces on one or both surfaces 62a,62b of the substrate 16
- the flexible connections 64a-64n are preferably laid out on a standardized layout pattern, which can match standardized power and ground pad patterns (i.e. assignments) on the printed wi ⁇ ng board probe card 68, thus allowing the same printed wi ⁇ ng board probe card 68 to be used for substrates 1 6 laid out to mate to different integrated circuit devices 44 As a printed wiring board probe card 68 may be adapted to specialized substrates 16, for the testing of a variety of different devices 44, the operating cost for a printed wiring board probe card 68 is reduced.
- capacitors 172 (FIG. 24), such as
- LICATM series capacitors from AVX Corporation, of Myrtle Beach SC, are preferably mounted on the top surface 62b of the substrate 16.
- a parallel plate capacitor may be formed within the substrate 16, between the reference plane and a plane formed on the unused areas of the routing trace layer.
- an integral capacitor 67 e.g. such as an integral bypass capacitor
- a look up and look down camera is typically used to align the wafer chuck to the substrate 1 6, whereby the probe tips 20 are aligned to the contact pads 47 or traces 46 on a device under test 44 located on a semiconductor wafer 92. Alignment is typically achieved, either by looking at spring tips 24, or at alignment marks 125 printed on the substrate 16.
- the substrate 16 is preferably comprised of translucent or transparent material (e.g. such as glass ceramic or glass), thereby allowing view-through-the-top alignment methods to be performed by a test operator.
- a window 165 (FIG. 24) is preferably defined in the printed wiring board probe card 68, while alignment marks 1 25
- FIG. 17 185 (FIG. 26) are preferably located on the substrate and or the wafer 92 under test A test operator may then use a camera or microscope to view the alignment marks 125 through the window, and align the substrate 1 6 and wafer 92
- a window 123 in the substrate region 16 over the IC center is preferably defined, allowing access to observe signals in the die 92.
- Windows 123 work best for integrated circuit devices 44 having I/O pads located along the die edge, enabling direct probing of integrated circuit devices 44 located on a wafer 92 .
- the semiconductor wafer dies 92 must be diced first wherein separate integrated circuit devices 44 are wire bonded into a package, and are then tested.
- openings within the substrate 16 are also preferably used for m-situ e-beam repair of devices such as DRAMs, ri which the probe card assembly 60 may remain in place Testing, repair and retesting may thus be performed at the same station, without moving the wafer 92.
- the structure of the probe card assembly 60a provides very short elect ⁇ cal distances between the probe tips 61 a-61 n and the controlled impedance environment in the printed wi ⁇ ng board probe card 68, which allows the probe card assembly 60a to be used for high frequency applications
- one or more conductive reference planes may be added within the substrate 16, either on top of the traces below the traces, or both above and below the traces
- the substrate 16 may contain alternating ground reference traces, which are connected to the one or two reference planes 262a, 262b (FIG 37) at regular intervals using vias 266 (FIG. 37), to effectively provide a shielded coaxial transmission line environment 260
- a probe card assembly structure 60 fixedly supports a substrate 16, relative to the p ⁇ nted wiring board probe card 68, in the lateral X and Y directions, as well as rotationally 90 in relation to the Z axis 84 While the flexible spring probes 61 a-61 n, as well as flexible connections 64a-64n, provide some planarity compliance between a probe card assembly 60 and a semiconductor wafer 92 or device 44, other preferred embodiments of the probe card assembly 60 provide enhanced piana ⁇ ty compliance
- probe card assembly 60 allows the substrate 16 to pivot about its center (i.e.
- the probe card assembly 60 must still exert a controlled downward force in the Z direction 84, for engaging the probe spring contacts 61 a-61 n located on the bottom surface 62a of the substrate 16 against a semiconductor wafer 92.
- the central region 1 19 (FIG 17) of the substrate 16 is used for electncal connections 64a-64n between the substrate 16 and the printed wi ⁇ ng board probe card 68, thus requi ⁇ ng that the substrate 1 6 be supported along the periphery 127 (FIG. 17) of the substrate 16
- a ball joint fulcrum structure may be located within the central region of a probe card assembly on the back side of the substrate support structure, to allow the substrate 16 to pivot about the center, and to provide force to engage the probe tips 61 a-61 n
- such a structure would typically impede wire leads or other elect ⁇ cal connections, which often need to exit over the central region of the probe card assembly
- such a movable joint does not typically rest ⁇ ct theta rotation 90 of the substrate 1 6 reliably.
- Figure 15 is a first partial cross-sectional view 96a of a bridge and leaf sp ⁇ ng suspended probe card assembly 60b
- Figure 1 6 is a second partial cross- sectional view 96b of the bridge and leaf spring suspended probe card assembly 60b shown in Figure 15, which provides planarity compliance with one or more integrated circuit devices 44 on a semiconductor wafer 92 which may be non-coplanar with the probe card assembly 60b.
- Figure 17 is a partial expanded assembly view 124 of major components for a bridge and spring probe card suspension assembly 60b.
- a leaf spring 98 connects to the substrate 16 through a bridge structure 100.
- a preload assembly 121 (FIG. 15) is used as a means for accurately setting the initial plane and Z position of the substrate 1 6 in relation to the printed wi ⁇ ng board probe card 68b, and to set the pre-load force of the leaf spring 98
- the preload assembly 1 21 comprises fasteners 1 1 8, which are used in conjunction with bridge shims 122.
- the preload assembly 121 may comprise calibration screw assemblies or other standoffs 1 18.
- the outer edges of a leaf spring 99 are fixed to the printed winng board probe card 68 along its outside edges b y attachment frame 107.
- the center of the leaf spring 98 is connected to the bridge 100, by one or more fasteners 108, an upper bridge spacer 104, and a lower bridge spacer 106
- Bridge preload shims 1 10 are preferably added, such as to vary the Z-distance between the leaf spring 98 and the bridge 100. which varies the pre-load of the downward force exerted by the leaf spring 98 on the bridge 100
- the bridge 100 translates the support from the center out to the comers, and connects to the substrate 16 by a plurality (typically three or more) bridge legs 1 02.
- the bridge legs 1 02 protrude through leg openings 1 1 1 defined in the printed wi ⁇ ng board probe card 68, and are fixedly attached to the substrate 16, such as by adhesive or mechanical connections 1 12.
- the leaf spring 98 is typically fab ⁇ cated from a sheet of stainless steel or spring steel, and is typically patterned using chemical etching methods
- the downward force is a function of the stiffness of the spring, the diameter of the sp ⁇ ng spacers 104 and 106. as well as the size of the leaf spring 98.
- leaf spring 98 shown in Figure 16 has the shape of a cross
- other geometric shapes may be used to provide downward force, tilting freedom, and XN, and theta translation resistance
- a leaf sp ⁇ ng 98 having a crossshape may include any number of wings 99
- the wings 99 may have asymmet ⁇ cal shapes, which vary in width as they go from the outside edge towards the center
- the outside edge of the leaf spring 98 may be connected into a ⁇ ng, to provide further stability of the leaf spring 98
- the bridge 100 and the spacers 1 04 and 106 are preferably comprised of light and strong metals, such as aluminum or titanium, to minimize the mass of the moveable structure 60b
- the substrate 16 is typically attached to the legs 102 of the bridge 100, using an adhesive 1 12, such as an epoxy, or solder Where substrate repiaceability is needed, detachable connections 130, such as shown n Figure 18 can be used
- lower standoffs 1 14 are preferably used, which prevent the substrate 1 6 from touching a wafer under test 92.
- the lower standoffs 1 14 are preferably made of a relatively soft mate ⁇ al, such as polyimide, to avoid damage to the semiconductor wafer under test 92.
- the standoffs 1 14 are preferably placed, such that when the probe card assembly 60 is aligned with a device 44 on a semiconductor wafer 92, the standoffs are aligned with the saw streets 94 (FIG. 13) on the semiconductor wafer 92, where there are no active devices
- the height of the lower standoffs 1 14 are preferably chosen to limit the maximum compression of the spring probes 61 a-61 n, thus preventing damage to the spring probes 61 a-61 n.
- upper standoffs 1 16 are also preferably used, to prevent damage to the topside flexible elect ⁇ cal connections 64a-64n
- the upper standoffs 1 1 6 are preferably made of a moderately hard insuiative material, such as LEXA ⁇ TM, silicone, or plastic.
- adjustable bridge screws 1 18 and bridge shims 122 are used to set the initial plane of the substrate 16, as well as to provide a downward stop to the substrate 16. so that the flexible connections 64a-64n are not damaged b y over-extension.
- crash pads 120 are preferably placed on the probe card 68b, under the adjusting screws 1 18, to prevent the tip of the adjusting screws 1 18 from sinking into the printed wi ⁇ ng board probe card 68b over repeated contact cycles.
- Fastener shims 122 are also preferably used with the adjusting screws 1 1 8, such that the initial distance and planarity between the substrate 16 and the printed wi ⁇ ng board probe card 68b may be accurately set.
- the preload shims 1 1 0 are preferably used to control the initial pre-load of the downward force exerted by the leaf spring 98 onto the bridge 100.
- the set preload prevents vibration of the substrate 16, and improves contact charactenstics between the substrate 16 and the to the semiconductor wafer under test 92.
- Figure 18 is a first partial cross-sectional view 126a of an alternate bridge and spring suspended probe card assembly 60c, having an intermediate daughter card 134 detachably connected to the printed wi ⁇ ng board probe card substrate 68b. and wherein the spring probe substrate 16 is detachably connected to the bridge structure 100.
- Figure 19 is a second partial cross- sectional view 1 26b of the alternate bridge and spring suspended probe card assembly 60c shown in Figure 1 8, which provides planarity compliance with one or more integrated circuit devices 44 on a semiconductor wafer 92, which is originally non-coplanar with the probe card assembly 60c.
- a separable connector 132 is preferably used, which allows replacement of the substrate 16.
- Substrate attachment fasteners 130 e.g. such as but not limited to screws
- the preferred separable connector 132 is a MEG-ArrayTM connector, manufactured by FCI Electronics, of Etters, PA.
- One side of the separable connector 132 is typically soldered to the printed wi ⁇ ng board probe card 68, while the mating side is typically soldered to the daughter card 134, whereby the daughter card 134 may b e removeably connected from the printed winng board probe card 68b, while providing a large number of reliable elect ⁇ cal connections.
- the daughter card 134 preferably provides further fanout of the electrical connections, from a 5 typical pitch of about 1 mm for the flexible connections 64a-64n, to a common pitch of about 1 .27 mm for a separable connector 132.
- Figure 20 is a cross-sectional view 136 of a wire and spring post suspended probe card assembly 60d.
- a plurality of steel wires 138 (e.g. typically three I O or more) allow Z movement 84 of the substrate 16.
- the printed wi ⁇ ng board probe card 68c typically includes one or more spring posts 141 , which are preferably used to provide downward Z force, as well as to limit travel.
- Figure 21 is a cross-sectional view 142 of a suspended probe card assembly 60e having an intermediate daughter card 134 detachably connected to the printed wi ⁇ ng board probe card 68 by a separable connector 132.
- the flexible connections 64a-64n are preferably made with springs 14, 34, 50, and provide both electrical connections to the printed 0 wiring board probe card 68, as well as a mechanical connection between the printed wiring board probe card 68 and the daughter card 134.
- the flexible connections 64a-64n are permanently connected to conductive pads 143a-143n on the daughter card 134, using either solder or conductive epoxy.
- the flexible connections 64a-64n are 5 preferably designed to provide a total force larger than that required to compress all the bottom side probe springs 61 a-61 n fully, when compressed in the range of 2-1 0 mils.
- the flexible connections 64a- 64n are preferably arranged, such that the substrate 16 does not translate in the X, Y, or Theta directions as the flexible connections 64a-64n are 0 compressed.
- Upper substrate standoffs 1 16 are preferably used, to limit the maximum Z travel of the substrate 1 6. relative to the daughter card 1 34, thereby providing protection for the flexible connections 64a-64n.
- the upper 5 standoffs 1 16 are also preferably adjustable, such that there is a slight preload on the flexible connections 64a-64n. forcing the substrate 16 away from the daughter card 134, thereby reducing vibrations and chatter of the substrate 16 du ⁇ ng operation.
- a damping mate ⁇ al 145 (e.g. such as a gel) may also preferably be placed at one or more locations between the substrate 16 and the daughter card 14, to prevent vibration, oscillation or chatter of the substrate 16.
- the separable connector 132 preferably has forgiving mating coplanarity requirements, thereby providing fine planarity compliance between the daughter card 134 and the printed wiring board probe card 68.
- a mechanical adjustment mechanism 149 e.g. such as but not limited to fasteners 166, spacers 164, nuts 168, and shims 170 (FIG. 24) may also preferably be used between the daughter card 134 and the printed wiring board probe card 68.
- Figure 22 is a cross-sectional view 146 of a probe card assembly 60f, h which the probe spring substrate 16 is attached to a printed wiring board probe card 68 through a separable array connector 147.
- the probe card assembly 60f is suitable for small substrates 16, wherein a small non- planarity between the substrate 16 and a semiconductor wafer under test 92 can be absorbed by the spring probes 61 a-61 n alone.
- Figure 23 is a cross-sectional view 148 of a pogo wire suspended probe card assembly 60g, wherein a nano-spring substrate 16 is attached to a printed wiring board probe card substrate 68 by a large grid array (LGA) inte ⁇ oser connector 150.
- LGA interposer connector 150 is an AMPIFLEXTM connector, manufactured by AMP, Inc., of Harrisburg PA.
- the interposer connector 150 is a
- a pogo pin inte ⁇ oser 150 is used to connect opposing pogo pins 152 on the printed wiring board probe card 68 to electrical connections 66a-66n on the substrate 16.
- the substrate 16 is held by a plurality of steel pogo suspension wires 154, which are preferably biased to provide a slight upward force, thereby retaining the inte ⁇ oser connector 150, while preventing vibration and chatter of the assembly 60g.
- Figure 24 is a cross-sectional view of a small test area probe card assembly 60h. having one or more area array connectors 162 located between the main printed wiring board probe card 68 and a daughter card 134. which is attached to a small area sp ⁇ ng probe substrate 16.
- probe card assemblies 60 While many of the probe card assemblies 60 described above provide large planarity compliance for a probe spring substrate 16, some probe card assemblies are used for applications in which the device under test comprises a relatively small surface area. For example, for wafers 92 which include a small number of integrated circuits 44 (e.g. such as two ICs), the size of a mating substrate 16 can also be relatively small (e.g. such as less than 2 cm square).
- the planarity of the substrate 16 to the wafer under test 92 may become less critical than for large surface areas, and the compliance provided by the probe springs 61 a-61 n alone is often sufficient to compensate for the testing environment. While the compliance provided by the probe springs 61 a-61 n may be relatively small, as compared to conventional needle springs, such applications are well suited for a probe card assembly 60 having photolithographically formed or MEMS formed spring probes 61 a-61 n.
- the probe card assembly 60h is therefore inherently less complex, and typically more affordable, than multi-layer probe card assembly designs.
- the small size of the substrate 16 reduces the cost of the probe card assembly 60h, since the cost of a substrate 16 is strongly related to the surface area of the substrate 16.
- the probe springs 61 a-61 n are fabricated on the lower surface 62a of a hard substrate 16, using either thin-film or MEMS processing methods, as described above. Signals from the probe springs 61 a-61 n are fanned out to an array of metal pads 182, 184, 186 (FIG. 26), located on the upper surface
- the top side pads are connected to a daughter card 134, using common micro-ball grid solder array pads, typically at an array pitch such as 0.5 mm.
- the daughter card 1 34 further expands the pitch of the array, to pads having an approximate pitch of
- An area array connector 162. such as a MEG-ArrayTM connector, from FCI Electronics Inc. of Etters PA. is used to connect the 0.050 inch pitch pad array to the printed wiring board probe card 68
- Power bypass capacitors 172 such as LICATM capacitors from AVX Corporation of Myrtle Beach SC, are preferably added to the daughter card 134, close to the substrate micro-BGA pads 182, 184.186, to provide low impedance power filtering.
- the small test area probe card assembly 60h preferably includes a means for providing a mechanical connection between the printed wi ⁇ ng board probe card substrate 68 and the daughter card 134.
- one or more spacers 1 64 and spacing shims 170 provide a controlled separation distance and alignment between the daughter card 134 and the printed wiring board probe card substrate 68 while one or more fasteners 166 and nuts provide a means for mechanical attachment While a combination of spacers 164, shims 170, fasteners 1 66.
- alternate embodiments of the small test area probe card assembly 60h may use any combination of means for attachment between the daughter card 134 and the p ⁇ nted wiring board probe card substrate 68, such as but not limited to spring loaded fasteners, adhesive standoffs, or other combinations of attachment hardware.
- the substrate 1 6 preferably includes an access window 123 (FIG 17), while the daughter card 134 also preferably includes a daughter card access hole 163, and the printed wi ⁇ ng board probe card 68 preferably includes and a probe card access hole 165, such that access to a semiconductor wafer 92 is provided while the probe card assembly 60h is positioned over the wafer 92 (e g such as for visual alignment or for electron beam probing) Access holes 123.1 63, 165 may preferably be used in any of the probe card assemblies 60
- Figure 25 is a top view of a substrate wafer 174, upon which a plurality of micro ball grid array spring probe contactor chip substrates 16 are laid out.
- spring probe substrates 16 having a small surface area 175 several sp ⁇ ng probe contactor chip substrates 16 may typically be fab ⁇ cated from a single wafer 174
- as many as twenty four sites having a width 176 and a length 178 may b e established on a standard four inch round starting wafer 174.
- different substrates e.g.
- 16a.16b may be fab ⁇ cated across a starting wafer 174, whereby the cost of production (which may be significant) for different sp ⁇ ng probe substrates 1 6 may be shared, such as for masking costs and processing costs. Therefore, the cost of development for different substrates 16a, 16b may be lowered significantly (e.g. such as by a factor of up to 10 or more).
- Figure 26 is a top view of a single 0.5 millimeter pitch micro ball grid array 1 80 for a 14 mm square spring probe contactor chip (NSCC) 1 6b.
- the micro BGA pads 1 82, 1 84, 1 86 are preferably on a standard pitch (e.g. 0.5 mm).
- the outer five rows of pads 182 and the center pads 184 provide 341 signal connections, and the inside two rows 186 provide ninety six dedicated power and ground connections.
- Standoffs 1 14 are preferably placed in locations matching inactive regions on the wafer 92, such as on the scribe lane 94. to prevent damage to active devices 44 on the device under test 44
- One or more alignment marks 1 85 are also preferably located on the substrate wafer 1 74
- the production cost and turnaround time for a probe card assembly 60 can be significantly improved, by standardizing the footprints of the micro BGA pad array 180, the daughter card 134, and the printed wi ⁇ ng board probe card 68. Standardization of the micro-BGA pad array 180. as well power/ground pad assignments for the pads located on the substrates 1 6.134,68, allows a standardized pattern of vias 66a-66n in the base substrate 174.
- Standardization of other componentry for probe card assemblies 60 often allows printed wi ⁇ ng board probe cards 68 (and in some embodiments daughter cards 134), to be used for different substrates 1 6 and integrated circuit devices 44. wherein only the routing of the substrate 16 is customized.
- the use of a starting substrate 174 (FIG. 25) having a standardized pattem of vias 66a-66n also allows starting substrates 174 to be ordered, stored and used in quantity, thus reducing the cost of starting substrates 174, and often reducing the lead time to obtain the starting substrates 174.
- Photolithographic or M E M S spring probes 61 . 14, 34, 50 may alternately be used for bare die bum-in sockets, such as for DieMateTM bum-in sockets, manufactured by Texas Instruments Inc . of Mansfield MA, or for DieTMPak bum-in sockets, available through Aehr Test, Inc. of Fremont CA.
- the probe springs 61 springs and fanout metalization are needed only on one surface (e.g. probe surface 62a) of the substrate 16 The required fanout is used to determine the size of the substrate 16. based on the number of the I/O signals needed to be routed to pads on the edge of the substrate 1 6. Alternately, vias 66 in the substrate
- FIG. 27 is a plan view 190 of a tiling probe strip 192, having a probe strip length 198 and a probe strip width 200.
- the tiling probe strip 192 has a plurality of probe strip contact areas 194a-194n, each having a plurality of spring probes 61 a-61 n As well, in the embodiment shown, the spring probes 61 a-61 n are laid out in longitudinally aligned probe regions 196a, 1 96b. Use of one or more tiling probe strips
- the plurality of probe strip contact areas 194a -194n are preferably located symmetrically along the length of the tiling probe st ⁇ p 192, such that they aiign with a symmetrical plurality of integrated circuit devices 44 on a wafer 92.
- the tiling probe strips 192 typically include elect ⁇ cal vias 66a-66n and an array of elect ⁇ cal connections 64a-64n (FIG. 1 , 17, 21 ). such that while the spring probes 61 a-61 n may typically b e laid out to match specific devices 44 under test, the probe st ⁇ ps 1 92 include standard elect ⁇ cal vias 66a-66n and/or arrays of elect ⁇ cal connections 64a- 64n.
- each of the tiled probe strips 192 includes a standard ball g ⁇ d array 160 of solder connections.
- tiled probe strips 192 may include spring probes 61 a-61 n which are laid out to match specific devices 44 under test, the tiled probe strips 1 92 may b e 5 attached to standardized daughter cards 204 and/or standardized intermediate connectors (e.g. such as a separable connector 132), thus minimizing engineering development costs to produce a tiled probe assembly 202.
- Figure 28 is a partial bottom view of tiled probe head 202 comprising a l o plurality of tiled probe st ⁇ ps 192 attached to a support substrate 204, which includes an array 207 (FIG. 29) of electrically conductive vias 205.
- Figure 29 is a side view of a plurality of tiled probe strips 192 attached to a probe card, which are used to contact a plurality of integrated circurt devices 44 located on a semiconductor wafer 92.
- the tiled probe head 202 is typically used to l * contact a plurality of integrated circuit devices 44 located on a semiconductor wafer 92.
- the plurality of tiled probe st ⁇ ps 192 are preferably located symmetrically across the substrate 204, such that they align with a symmetrical plurality of integrated circuit devices 44 on a wafer 92.
- the substrate 204 preferably has a low thermal coefficient of expansion
- the substrate 204 typically fans out a large number of signal traces 46, to connectors on the opposite surface 209b of the substrate 204.
- the substrate 204 is a silicon wafer, which includes vias 205a-205n (e.g. such as 5 arranged on a 0.056 inch pitch) and thin film routing 46 on one or both substrate surfaces 209a, 209b.
- the tiled probe strips 192 include groups of probe springs 61 which are used to contact rows 0 of pads 47 (FIG. 7) on integrated circuit devices 44 having pads 47 located on opposing sides of a device under test 44 (e.g. such as on the right and left sides of an integrated circuit device site 44)
- the probe strips 192 are arranged such that one of the probe strips 192 typically contacts the ⁇ ght side of one circuit device site 44 (e.g. such as 5 using probe contact region 196a in Figure 27), in addition to contacting the left side of a neighboring circuit device site 44 (e.g.
- the embodiment shown in Figure 28 therefore provides simultaneous contact between the plurality of tiled probe st ⁇ ps 1 92 and a plurality of integrated circuit devices 44 while allowing adequate tolerances between adjoining tiled probe strips 192, wherein the side edges of the tiled probe strips 192 may preferably be placed over the saw streets of the integrated circuit device sites 44
- saw streets 94 between adjoining devices 44 on a wafer 92 may commonly be on the order of 4 to 8 mils wide thereby providing a similar gap between tiled probe strips 192 in the tiled probe card assembly 202
- all pads 47 for an integrated circuit device site 44 may be contacted by probes from a single probe strip 192
- Figure 30 is a partial cross-sectional view of a bum-in structure 210 which allows a plurality of integrated circuit devices 44 to b e temporarily connected to a burn-in board 212
- An array of probe spring i.e.
- nano-sp ⁇ ng) contactor chips (NSCC) 214 are mounted onto a bum-in board 212, such as by micro ball grid arrays 21 6, which provide electncal connections between the plurality of integrated circuit devices 44 and external bum-in circuitry (not shown)
- Board vacuum ports 21 8 are preferably defined in the bum-in board 212
- contactor chip vacuum ports 220 are preferably defined in the NSCC substrate 214, wherein the board vacuum ports 218 are generally aligned to the contactor chip vacuum ports 220 (e.g.
- An air seal 222 (e g such as an epoxy) is preferably dispensed around the periphery of each nano-sp ⁇ ng contactor chip 214, to prevent the loss of applied vacuum through the micro BGA ball array 216
- nano-sp ⁇ ng contactor chips 214 As integrated circuit devices 44 are initially placed on nano-sp ⁇ ng contactor chips 214 (e g such as by a "pick and place” machine), an applied vacuum to the board vacuum ports 218 on the bum-in board 212 and generally aligned contactor chip vacuum ports 220 on the nano-sp ⁇ ng contactor chips 214 prevents the placed integrated circuit devices 44 from shifting from their placed positions
- a clamp plate 224 is preferably placed n contact with the integrated circuit devices 44 to retain the integrated circuit devices 44 in place during bum-in operation.
- Individual sp ⁇ ng pads 226 may also be used, to push on the integrated circuit devices 44 under test, to allow for planarity tolerances of the clamp plate 224 and the bum-in board 212.
- the bum-in structure 210 preferably includes means 217 for retaining the 5 clamp plate 224, such that once the clamp plate 224 is placed in contact with the integrated circuit devices 44, the clamp plate 224 is attached to the bum-in board 212, and the applied vacuum may be switched off.
- spring probes 61 provide advantages of high pitch, high pin count, and flexibility, they may be used for a wide variety of applications. However, when these typically small spring probes 61 are used to contact traces 46 on integrated circuit devices 44, such as on semiconductive wafers 92. wherein the traces 46 often contain an oxide layer,
- the spring probes 61 are often required to break through oxide layers and establish adequate elect ⁇ cal contact with metal traces or conductive pads. As the spring probes 61 are often used many times, the small, unprotected spring probe tips 24 may become worn. Therefore, it would b e advantageous to provide an electncally conductive wear coating on the 0 contact tips 24 of the probe springs 61 However, such a protective coating is required to cover both the entire surface of the spring tip 24.
- the probe springs 61 may be formed by a plasma chemical vapor deposition and photolithographic processes, such as 5 disclosed in U.S Patent No. 5,848.685 and U.S. Patent No. 5,613.861 , wherein successive layers of conductive mate ⁇ al are applied to a substrate, and wherein non-planar springs are subsequently formed.
- a protective coating applied du ⁇ ng the deposition process would not inherently provide a continuous coating on all surfaces of 0 the formed non-planar probe springs.
- FIG. 31 is a view of a first 5 step 230 of a spring probe assembly coating process, in which a protective coating 232 is applied to a probe surface of a spring probe assembly substrate 16, having one or more non-planar probe springs 61
- the spring probe assembly coating process forms a protective layer on the non-planar probe sp ⁇ ngs 61 . While the coating process may be used for a wide variety of non-planar structures, it is specifically useful for the processing of thin film and MEMS probe spring contacts 61 .
- the applied electrically conductive protective coating is preferably a hard electrically conductive material, such as titanium nitride, rhodium, tungsten, or nickel.
- the applied electrically conductive protective coating is also preferably an inert material, thereby providing lubricative characteristics (i.e. a low coefficient of friction) for the probe tips 24 on the spring probes 61 , thus minimizing wear to both devices under test and to the spring probes 61 .
- the protective coating 233 When the protective coating 233 is applied 232 to the substrate 1 6 and probes 61 . the protective coating 233 covers both the planar and non-planar regions on the exposed surface 62 of the substrate 16. While the spring probes 1 6 are covered with the protective coating 233 during the coating step 230. all the traces on the substrate structure are electrically shorted together, from the applied conductive coating 233. The conductive coating 233 is therefore required to be patterned, or partially removed, to restore electrical isolation between different probe springs 61 and their respective traces. While conventional photo-masking processes are typically used in the majority of integrated circuit processing, to selectively etch away conductive coatings, such as titanium nitride coatings, such photo-masking processes are used for planar structures.
- Figure 32 is a view of a second step 234 of a spring probe assembly coating process, in which a layer of photoresistive material 240 (e.g. approximately 10 microns deep) is applied to a second substrate 236, which preferably has dipping standoffs 238 (e.g. approximately 30 microns high). The photoresistive material 240 is used to protect the applied protective layer 233 on non-planar portions of the probe springs.
- Figure 33 is a view of a third step of a spring probe assembly coating process, in which a coated spring probe assembly is partially and controllably dipped 242 into photoresistive material 240 on the second substrate 236. The depth of applied photoresistive material 240 eventually controls the remaining protective coating 233.
- the substrate 16 is lowered to a desired depth in the photoresistive material 240, which is typically controlled the applied depth of the photoresistive material 240 on the second substrate 236. and the height of the dipping standoffs 20.
- the applied depth may alternately controlled b y an operator, such as by controlled axial movement of a processing apparatus, to control the movement of the substrate 16 into the photoresistive material 240
- Figure 34 is a view of a fourth step of a spring probe assembly coating
- FIG. 35 is a view of a fifth step of a spring probe assembly coating process, in which the coated lo and dipped spring probe assembly 16,61 is etched 250, thereby removing the protective coating 233 from portions of the substrate 16 (/ e.
- FIG. 36 is a view of a sixth step of a spring probe assembly coating process in which photo-resist layers 248 are stripped from l ⁇ the portions of the probe springs 61 which were covered in a photo-resist layer 248, thereby exposing the protective coating 233
- the non-planar probe spring coating process therefore provides a protective coating to the tips 24 of the probe springs, while etching the unwanted 0 protective coating in the substrate surface 16 and portions of the spring probes 61 which are not coated with photo-resist layers 248.
- the structure of the probe card assemblies 60 provides very short elect ⁇ cal distances between the probe tips 61 a-61 n and the controlled impedance environment in the p ⁇ nted wiring board probe card 68, which allows the probe card assemblies 60 to be used for high frequency applications
- the spring probe substrate 16 may preferably b e modified for ultra high frequency applications
- Figure 37 shows a partial cross- 0 sectional view 260 of an ultra high frequency spring probe substrate 16
- one or more conductive reference planes 262a, 262b may be added within the substrate 16, either on top of the traces 270, below the traces 270 or both above and 5 below the traces 270
- the substrate 16 may also contain alternating ground reference traces 266a.266b which are connected to the one or two reference planes 262a,262b to effectively provide a shielded coaxial transmission line
- probe card assembly systems and improved non- planar spring probes and methods for production are described herein connection with integrated circuit test probes, and probe cards, the system and techniques can be implemented with other devices, such as interconnections between integrated circuits and substrates within electronic components or devices, bum-in devices and MEMS devices, or any combination thereof, as desired.
Abstract
Description
Claims
Priority Applications (9)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001500317A JP2004500699A (en) | 1999-05-27 | 2000-05-23 | Structure and manufacturing method of integrated circuit wafer probe card assembly |
KR1020017015188A KR100707044B1 (en) | 1999-05-27 | 2000-05-23 | Construction structures and manufacturing processes for integrated circuit wafer probe card assemblies |
AU51563/00A AU5156300A (en) | 1999-05-27 | 2000-05-23 | Construction structures and manufacturing processes for integrated circuit waferprobe card assemblies |
US10/870,095 US7349223B2 (en) | 2000-05-23 | 2004-06-16 | Enhanced compliant probe card systems having improved planarity |
US10/888,761 US20050068054A1 (en) | 2000-05-23 | 2004-07-09 | Standardized layout patterns and routing structures for integrated circuit wafer probe card assemblies |
US11/133,021 US7382142B2 (en) | 2000-05-23 | 2005-05-18 | High density interconnect system having rapid fabrication cycle |
US11/350,049 US7579848B2 (en) | 2000-05-23 | 2006-02-07 | High density interconnect system for IC packages and interconnect assemblies |
US11/552,110 US7952373B2 (en) | 2000-05-23 | 2006-10-23 | Construction structures and manufacturing processes for integrated circuit wafer probe card assemblies |
US11/858,064 US7872482B2 (en) | 2000-05-23 | 2007-09-19 | High density interconnect system having rapid fabrication cycle |
Applications Claiming Priority (2)
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US13663699P | 1999-05-27 | 1999-05-27 | |
US60/136,636 | 1999-05-27 |
Publications (2)
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WO2000074110A2 true WO2000074110A2 (en) | 2000-12-07 |
WO2000074110A3 WO2000074110A3 (en) | 2001-09-27 |
Family
ID=22473698
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/US2000/014164 WO2000074110A2 (en) | 1999-05-27 | 2000-05-23 | Integrated circuit wafer probe card assembly |
Country Status (4)
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JP (1) | JP2004500699A (en) |
KR (1) | KR100707044B1 (en) |
AU (1) | AU5156300A (en) |
WO (1) | WO2000074110A2 (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
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US6812718B1 (en) * | 1999-05-27 | 2004-11-02 | Nanonexus, Inc. | Massively parallel interface for electronic circuits |
JP2006349692A (en) * | 2006-08-01 | 2006-12-28 | Japan Electronic Materials Corp | Probe card |
US7872482B2 (en) | 2000-05-23 | 2011-01-18 | Verigy (Singapore) Pte. Ltd | High density interconnect system having rapid fabrication cycle |
US7952373B2 (en) | 2000-05-23 | 2011-05-31 | Verigy (Singapore) Pte. Ltd. | Construction structures and manufacturing processes for integrated circuit wafer probe card assemblies |
CN111880067A (en) * | 2019-04-15 | 2020-11-03 | 中华精测科技股份有限公司 | Wafer test assembly and electrical connection module thereof |
CN113406481A (en) * | 2021-07-08 | 2021-09-17 | 陈清梅 | Integrated circuit input end testing device |
TWI742465B (en) | 2018-12-13 | 2021-10-11 | 日商日本麥克隆尼股份有限公司 | Electrical connection device |
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Publication number | Priority date | Publication date | Assignee | Title |
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TWI286209B (en) * | 2006-01-27 | 2007-09-01 | Mjc Probe Inc | Integrated circuit probe card |
KR100701498B1 (en) * | 2006-02-20 | 2007-03-29 | 주식회사 새한마이크로텍 | Probe pin assembly for testing semiconductor and method for manufacturing the same |
US7604486B2 (en) * | 2006-12-21 | 2009-10-20 | Intel Corporation | Lateral force countering load mechanism for LGA sockets |
CN101889338B (en) * | 2007-10-08 | 2012-10-24 | Amst株式会社 | Method for wafer test and probe card for the same |
KR102035998B1 (en) * | 2013-10-25 | 2019-10-24 | 가부시키가이샤 어드밴티스트 | Interface apparatus, manufacturing method and test apparatus |
EP3304110A4 (en) * | 2015-05-29 | 2019-01-23 | R&D Circuits Inc. | Improved power supply transient performance (power integrity) for a probe card assembly in an integrated circuit test environment |
CN107665848B (en) * | 2016-07-29 | 2020-08-25 | 上海微电子装备(集团)股份有限公司 | Debonding and leveling device and debonding method |
KR20210058641A (en) * | 2019-11-12 | 2021-05-24 | 화인인스트루먼트 (주) | Probe array and Probe head manufacturing method of the probe card using the same |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0369112A1 (en) * | 1988-11-12 | 1990-05-23 | MANIA GmbH & Co. | Adapter for electronic test devices for printed-circuit boards and the like |
US5030109A (en) * | 1990-08-24 | 1991-07-09 | Amp Incorporated | Area array connector for substrates |
FR2680284A1 (en) * | 1991-08-09 | 1993-02-12 | Thomson Csf | Connection device having a very small pitch and method of manufacture |
US5436568A (en) * | 1994-01-25 | 1995-07-25 | Hughes Aircraft Company | Pivotable self-centering elastomer pressure-wafer probe |
EP0701136A2 (en) * | 1994-09-09 | 1996-03-13 | Tokyo Electron Limited | Electrical probe apparatus |
WO1996015458A1 (en) * | 1994-11-15 | 1996-05-23 | Formfactor, Inc. | Probe card assembly and kit, and methods of using same |
WO1998021597A1 (en) * | 1996-11-12 | 1998-05-22 | Charmant Beheer B.V. | Method for the manufacture of a test adapter as well as test adapter and a method for the testing of printed circuit-boards |
US5821763A (en) * | 1992-10-19 | 1998-10-13 | International Business Machines Corporation | Test probe for high density integrated circuits, methods of fabrication thereof and methods of use thereof |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6453429A (en) * | 1987-08-24 | 1989-03-01 | Mitsubishi Electric Corp | Device for testing semiconductor chip |
JP2966671B2 (en) * | 1991-11-18 | 1999-10-25 | 東京エレクトロン株式会社 | Probe card |
JP2995134B2 (en) * | 1993-09-24 | 1999-12-27 | 東京エレクトロン株式会社 | Probe device |
US5923180A (en) * | 1997-02-04 | 1999-07-13 | Hewlett-Packard Company | Compliant wafer prober docking adapter |
US6578264B1 (en) * | 1999-06-04 | 2003-06-17 | Cascade Microtech, Inc. | Method for constructing a membrane probe using a depression |
JP5728437B2 (en) * | 2012-07-17 | 2015-06-03 | 長野計器株式会社 | Physical quantity measuring device and method of manufacturing physical quantity measuring device |
-
2000
- 2000-05-23 KR KR1020017015188A patent/KR100707044B1/en not_active IP Right Cessation
- 2000-05-23 AU AU51563/00A patent/AU5156300A/en not_active Abandoned
- 2000-05-23 JP JP2001500317A patent/JP2004500699A/en active Pending
- 2000-05-23 WO PCT/US2000/014164 patent/WO2000074110A2/en active IP Right Grant
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0369112A1 (en) * | 1988-11-12 | 1990-05-23 | MANIA GmbH & Co. | Adapter for electronic test devices for printed-circuit boards and the like |
US5030109A (en) * | 1990-08-24 | 1991-07-09 | Amp Incorporated | Area array connector for substrates |
FR2680284A1 (en) * | 1991-08-09 | 1993-02-12 | Thomson Csf | Connection device having a very small pitch and method of manufacture |
US5821763A (en) * | 1992-10-19 | 1998-10-13 | International Business Machines Corporation | Test probe for high density integrated circuits, methods of fabrication thereof and methods of use thereof |
US5436568A (en) * | 1994-01-25 | 1995-07-25 | Hughes Aircraft Company | Pivotable self-centering elastomer pressure-wafer probe |
EP0701136A2 (en) * | 1994-09-09 | 1996-03-13 | Tokyo Electron Limited | Electrical probe apparatus |
WO1996015458A1 (en) * | 1994-11-15 | 1996-05-23 | Formfactor, Inc. | Probe card assembly and kit, and methods of using same |
WO1998021597A1 (en) * | 1996-11-12 | 1998-05-22 | Charmant Beheer B.V. | Method for the manufacture of a test adapter as well as test adapter and a method for the testing of printed circuit-boards |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6812718B1 (en) * | 1999-05-27 | 2004-11-02 | Nanonexus, Inc. | Massively parallel interface for electronic circuits |
US7772860B2 (en) | 1999-05-27 | 2010-08-10 | Nanonexus, Inc. | Massively parallel interface for electronic circuit |
US7884634B2 (en) | 1999-05-27 | 2011-02-08 | Verigy (Singapore) Pte, Ltd | High density interconnect system having rapid fabrication cycle |
US7872482B2 (en) | 2000-05-23 | 2011-01-18 | Verigy (Singapore) Pte. Ltd | High density interconnect system having rapid fabrication cycle |
US7952373B2 (en) | 2000-05-23 | 2011-05-31 | Verigy (Singapore) Pte. Ltd. | Construction structures and manufacturing processes for integrated circuit wafer probe card assemblies |
JP2006349692A (en) * | 2006-08-01 | 2006-12-28 | Japan Electronic Materials Corp | Probe card |
TWI742465B (en) | 2018-12-13 | 2021-10-11 | 日商日本麥克隆尼股份有限公司 | Electrical connection device |
CN111880067A (en) * | 2019-04-15 | 2020-11-03 | 中华精测科技股份有限公司 | Wafer test assembly and electrical connection module thereof |
CN113406481A (en) * | 2021-07-08 | 2021-09-17 | 陈清梅 | Integrated circuit input end testing device |
Also Published As
Publication number | Publication date |
---|---|
KR20030085142A (en) | 2003-11-05 |
JP2004500699A (en) | 2004-01-08 |
AU5156300A (en) | 2000-12-18 |
WO2000074110A3 (en) | 2001-09-27 |
KR100707044B1 (en) | 2007-04-13 |
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