WO2000065700A3 - Postgrowth adjustment of cavity spectrum for semiconductor lasers and detectors - Google Patents

Postgrowth adjustment of cavity spectrum for semiconductor lasers and detectors Download PDF

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Publication number
WO2000065700A3
WO2000065700A3 PCT/US2000/011048 US0011048W WO0065700A3 WO 2000065700 A3 WO2000065700 A3 WO 2000065700A3 US 0011048 W US0011048 W US 0011048W WO 0065700 A3 WO0065700 A3 WO 0065700A3
Authority
WO
WIPO (PCT)
Prior art keywords
oxidation
tuning
optical
index
semiconductor
Prior art date
Application number
PCT/US2000/011048
Other languages
French (fr)
Other versions
WO2000065700A2 (en
Inventor
Larry Coldren
Yuliya Akulova
Andrea Fiore
Original Assignee
Gore Enterprise Holdings Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gore Enterprise Holdings Inc filed Critical Gore Enterprise Holdings Inc
Priority to AU58663/00A priority Critical patent/AU5866300A/en
Publication of WO2000065700A2 publication Critical patent/WO2000065700A2/en
Publication of WO2000065700A3 publication Critical patent/WO2000065700A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18344—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] characterized by the mesa, e.g. dimensions or shape of the mesa
    • H01S5/1835—Non-circular mesa
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18358—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] containing spacer layers to adjust the phase of the light wave in the cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/10—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
    • H01L33/105—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector with a resonant cavity structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18355—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a defined polarisation

Abstract

A method for selectively tuning the wavelength of optical cavities in semiconductor lasers and detectors after epitaxial growth using lateral wet oxidation. Tuning layers of AlxGa1-xAs and AlyGa1-yAs are positioned inside or adjacent to the optical cavity. Wet lateral oxidation is then used to transform the high-index semiconductor into a low-index oxide for tuning. The oxidation proceeds laterally into the AlxGa1-xAs and then attacks the AlyGa1-yAs layer vertically. The ratios of the oxidation rates can be controlled by adjusting the compositions of the materials, most notably because the oxidation rate increases as the amount of aluminum increases. The oxidized thickness depends on the time that the tuning layer is exposed to vertical oxidation. Due to the change in optical index from the semiconductor to the oxide, the optical thickness and the resonant wavelength of the cavity are also tailored along the lateral oxidation. As a result, the resonant wavelength of a device depends on its distance from the etched edge.
PCT/US2000/011048 1999-04-27 2000-04-25 Postgrowth adjustment of cavity spectrum for semiconductor lasers and detectors WO2000065700A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU58663/00A AU5866300A (en) 1999-04-27 2000-04-25 Postgrowth adjustment of cavity spectrum for semiconductor lasers and detectors

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US30025399A 1999-04-27 1999-04-27
US09/300,253 1999-04-27

Publications (2)

Publication Number Publication Date
WO2000065700A2 WO2000065700A2 (en) 2000-11-02
WO2000065700A3 true WO2000065700A3 (en) 2001-01-18

Family

ID=23158322

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2000/011048 WO2000065700A2 (en) 1999-04-27 2000-04-25 Postgrowth adjustment of cavity spectrum for semiconductor lasers and detectors

Country Status (2)

Country Link
AU (1) AU5866300A (en)
WO (1) WO2000065700A2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6822995B2 (en) 2002-02-21 2004-11-23 Finisar Corporation GaAs/AI(Ga)As distributed bragg reflector on InP
US8168456B2 (en) 2004-10-01 2012-05-01 Finisar Corporation Vertical cavity surface emitting laser with undoped top mirror
US8451875B2 (en) 2004-10-01 2013-05-28 Finisar Corporation Vertical cavity surface emitting laser having strain reduced quantum wells

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6975660B2 (en) 2001-12-27 2005-12-13 Finisar Corporation Vertical cavity surface emitting laser including indium and antimony in the active region
US6922426B2 (en) 2001-12-20 2005-07-26 Finisar Corporation Vertical cavity surface emitting laser including indium in the active region
US7058112B2 (en) 2001-12-27 2006-06-06 Finisar Corporation Indium free vertical cavity surface emitting laser
US7095770B2 (en) 2001-12-20 2006-08-22 Finisar Corporation Vertical cavity surface emitting laser including indium, antimony and nitrogen in the active region
US7075954B2 (en) * 2001-05-29 2006-07-11 Nl Nanosemiconductor Gmbh Intelligent wavelength division multiplexing systems based on arrays of wavelength tunable lasers and wavelength tunable resonant photodetectors
CN104659166B (en) * 2015-02-11 2018-01-19 山东浪潮华光光电子股份有限公司 A kind of wet-oxygen oxidation method of GaAs based light-emitting diodes

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09135051A (en) * 1995-11-09 1997-05-20 Nec Corp Surface light emitting device and its manufacture

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09135051A (en) * 1995-11-09 1997-05-20 Nec Corp Surface light emitting device and its manufacture

Non-Patent Citations (6)

* Cited by examiner, † Cited by third party
Title
CHANG-HASNAIN C: "VERTICAL-CAVITY SURFACE-EMITTING LASERS:2-D ARRAYS", PROCEEDINGS OF THE OPTICAL FIBER COMMUNICATION CONFERENCE,US,NEW YORK, IEEE, vol. CONF. 15, 2 February 1992 (1992-02-02), pages 100, XP000341618, ISBN: 1-55752-222-7 *
FIORE A ET AL: "LOW-THRESHOLD MULTIPLE-WAVELENGTH VERTICAL-CAVITY LASER ARRAYS OBTAINED BY POSTGROWTH WET OXIDATION", ELECTRONICS LETTERS,GB,IEE STEVENAGE, vol. 34, no. 19, 17 September 1998 (1998-09-17), pages 1857 - 1858, XP000853427, ISSN: 0013-5194 *
FIORE A ET AL: "Postgrowth tuning of cavity resonance for multiple-wavelength laser and detector arrays", TECHNICAL DIGEST. SUMMARIES OF PAPERS PRESENTED AT THE CONFERENCE ON LASERS AND ELECTRO-OPTICS. CONFERENCE EDITION. 1998 TECHNICAL DIGEST SERIES, VOL.6 (IEEE CAT. NO.98CH36178), TECHNICAL DIGEST SUMMARIES OF PAPERS PRESENTED AT THE CONFERENCE ON LASE, 1998, Washington, DC, USA, Opt. Soc. America, USA, pages 467 - 468, XP002150211, ISBN: 1-55752-339-0 *
FIORE A ET AL: "POSTGROWTH TUNING OF SEMICONDUCTOR VERTICAL CAVITIES FOR MULTIPLE-WAVELENGTH LASER ARRAYS", IEEE JOURNAL OF QUANTUM ELECTRONICS,IEEE INC. NEW YORK,US, vol. 35, no. 4, April 1999 (1999-04-01), pages 616 - 622, XP000850971, ISSN: 0018-9197 *
PATENT ABSTRACTS OF JAPAN vol. 1997, no. 09 30 September 1997 (1997-09-30) *
WIPIEJEWSKI T ET AL: "VERTICAL-CAVITY SURFACE-EMITTING LASER DIODES WITH POST-GROWTH WAVELENGTH ADJUSTMENT", IEEE PHOTONICS TECHNOLOGY LETTERS,US,IEEE INC. NEW YORK, vol. 7, no. 7, 1 July 1995 (1995-07-01), pages 727 - 729, XP000516835, ISSN: 1041-1135 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6822995B2 (en) 2002-02-21 2004-11-23 Finisar Corporation GaAs/AI(Ga)As distributed bragg reflector on InP
US8168456B2 (en) 2004-10-01 2012-05-01 Finisar Corporation Vertical cavity surface emitting laser with undoped top mirror
US8451875B2 (en) 2004-10-01 2013-05-28 Finisar Corporation Vertical cavity surface emitting laser having strain reduced quantum wells

Also Published As

Publication number Publication date
WO2000065700A2 (en) 2000-11-02
AU5866300A (en) 2000-11-10

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