WO2000065126A1 - Cvd tantalum nitride plug formation from tantalum halide precursors - Google Patents
Cvd tantalum nitride plug formation from tantalum halide precursors Download PDFInfo
- Publication number
- WO2000065126A1 WO2000065126A1 PCT/US2000/011281 US0011281W WO0065126A1 WO 2000065126 A1 WO2000065126 A1 WO 2000065126A1 US 0011281 W US0011281 W US 0011281W WO 0065126 A1 WO0065126 A1 WO 0065126A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- tantalum
- precursor
- vapor
- tan
- film
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/205—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
- H01L21/76861—Post-treatment or after-treatment not introducing additional chemical elements into the layer
- H01L21/76862—Bombardment with particles, e.g. treatment in noble gas plasmas; UV irradiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
Definitions
- This invention relates to the formation of integrated circuits
- integrated circuits provide the pathways for signal transport in an
- An integrated circuit (IC) in a device is composed of a number
- metal “wires” are made between one active transistor in the silicon base of
- the substrate and another active transistor in the silicon base of the substrate are another active transistor in the silicon base of the substrate.
- interconnections collectively known as the metal interconnection of a circuit
- a contact plug As 00/65126
- the contact plug must decrease to allow for the increased number of
- interconnects multilevel metalization structures and higher aspect ratio vias.
- Tne liner must also provi ⁇ e a low eiect ⁇ cal resistance interface
- cnemicai v aoo' ⁇ eoosition (CVD)
- CVD ⁇ eoosition
- r r ⁇ r s to copper.
- Ti reacts with copper to form copper titanium compounds at the
- Ta Sputtered tantalum
- TaN reactive sputtered tantalum nitride
- the deposited Ta and/or TaN have resistance to diffusion of foreign atoms.
- the deposited Ta and/or TaN have resistance to diffusion of foreign atoms.
- the deposited Ta and/or TaN have resistance to diffusion of foreign atoms.
- CVD offers the inherent advantage over PVD of
- TBTDET tertbutyiimidotris(diethylamido)tantalum
- a contact plug makes an electrical connection between doped silicon
- a liner of about 100 A Ta is first deposited using PVD. This Ta layer
- TaN is then deposited on the Ta layer by PVD.
- a seed layer of 1 00 A Cu is then deposited by PVD, and the remainder of the plug is filled with electroplated Cu.
- the TaN layer serves as a metal diffusion barrier to protect the dielectric layer
- TaN also serves as an adhesion layer for the Cu.
- TaN barrier layer may remain at greater than about 200 A for robust performance
- the Ta thickness is still required to be 1 00 A, it follows
- a structure with a diameter of 0J 3 ⁇ m would have a Cu film or "core"
- the size of the via to be filled its relative thickness is about 80% of the via diameter. This is because the deposited film must not only fill the volume of the
- the via is eliminated by depositing more TaN on top of the plug, resulting in a
- thick films be continuous, completely conformal, and seamless.
- underlying materials such as low k dielectrics, a deposition rate of more than 1 00
- the invention is directed to a method of filling a via with a TaN plug
- TaN x tantalum halide
- precursor is delivered at a temperature sufficient to vaporize the precursor to
- the vaporization pressure is greater than
- the vapor is combined with a process gas containing nitrogen and
- TaN x is deposited by a thermal chemical vapor deposition (thermal CVD) process.
- the deposition is halted to plasma treat the film, then deposition is resumed.
- plasma treatments are performed at regular intervals in the thermal CVD process
- tantalum fluoride TaF
- tantalum chloride TaCI
- tantalum bromide tantalum bromide
- TaBr tantalum pentafluoride (TaF 5 ), tantalum pentachloride (TaCI 5 )
- the substrate temperature is in the range of
- the present invention is also directed to a method of completely
- a TaN x layer from a TaF 5 or TaCI 5 precursor by elevating the precursor
- the vapor is combined with a process gas containing nitrogen and
- TaN x is deposited in the feature by a thermal chemical vapor deposition (thermal
- CVD chemical vapor deposition
- the invention is further directed to a method of filling a high aspect
- TaBr 5 precursor on a substrate without a carrier gas.
- the temperature of the precursor is elevated sufficient to produce a tantalum vapor.
- the vapor is
- thermal chemical vapor deposition thermal CVD
- deposition is halted to plasma treat the film surface, then deposition is resumed.
- the plasma treatments are performed at regular intervals in the thermal CVD
- the fiims deposited by the method of the invention can completely
- the films are
- the films have a cracking threshold greater than 2000
- A have sufficiently low electrical resistivities, have 1 00% conformality in high
- the films have minimal impurities and are good barriers to copper diffusion.
- films can be deposited at a rate sufficient for throughput considerations. It will be appreciated that it will be deposited at a rate sufficient for throughput considerations. It will be appreciated that it will be deposited at a rate sufficient for throughput considerations. It will be appreciated that it will be deposited at a rate sufficient for throughput considerations. It will be appreciated that it will be deposited at a rate sufficient for throughput considerations. It will be appreciated that it will be deposited at a rate sufficient for throughput considerations. It will be deposited at a rate sufficient for throughput considerations. It will be deposited at a rate sufficient for throughput considerations. It will be deposited at a rate sufficient for throughput considerations. It will be deposited at a rate sufficient for throughput considerations. It will be deposited at a rate sufficient for throughput considerations. It will be deposited at a rate sufficient for throughput considerations. It will be deposited at a rate sufficient for throughput considerations. It will be deposited at a rate sufficient for throughput considerations. It will be deposited
- FIG. 1 is a schematic of an apparatus for plasma treated thermal
- FIG. 2 is a graph of vapor pressure versus temperature for tantalum
- FIG. 3 is a schematic representation of a structure fabricated using
- FIG. 4 is a scanning electron micrograph (SEM) image of a plug fill
- FIG. 5 is a SEM image of a plug fill by TaN x deposited by TaF 5 based
- FIG. 6 is a SEM image of a plug fill by TaN x deposited by TaBr 5 based
- FIG. 7 is a SEM image of a plug fill by TaN x deposited by TaBr 5 based
- FIG . 8 is a SEM image of a 1 1 50 A TaF 5 based CVD TaN x film.
- FIG. 9 is a SEM image of a 3700 A TaCI 5 based CVD TaN x film.
- FIG. 1 0 is a SEM image of a 1 350 A TaBr 5 based CVD TaN x film.
- FIG. 1 1 is a SEM image of TaF 5 based CVD Ta/TaN x film deposited
- FIG. 1 2 is a SEM image of TaCI 5 based CVD TaN x film deposited on
- FIG. 1 3 is a SEM image of TaBr 5 based CVD Ta/TaN x film deposited
- FIG . 1 4 is an Auger spectrum of a TaBr 5 based CVD TaN x film
- Refractory transition metals such as tantalum (Ta) and their nitride
- TaN are effective diffusion barriers to copper (Cu) . Their effectiveness is
- Ta and TaN are especially attractive due to
- Tantalum halides provide a convenient inorganic source for Ta and
- the inorganic precursor is a tantalum pentahalide (TaX 5 ) where
- X represents the halides fluorine (F), chlorine (Cl) and bromine (Br).
- tantalum pentafluoride TaF 5
- tantalum pentachloride TaCI 5
- tantalum bromide (TaBr 5 ), with tantalum pentaiodide (Tal 5 ) included for
- TaF 5 , TaCI 5 and TaBr 5 precursor materials are all solids at room
- a preferred method of CVD is
- a chemical vapor deposition (CVD) system 1 0 includes a
- CVD reaction chamber 1 1 and a precursor delivery system 1 2.
- reaction chamber a reaction is carried out to convert a precursor gas of, for
- tantalum chloride (TaCI) or other tantalum halide compound, into a film
- TaN tantalum nitride
- film is not limited to any particular stoichiometry (TaN x ).
- TaN x stoichiometry
- TaN x encompasses a tantalum nitride film of any stoichiometry.
- the precursor delivery system 12 includes a source 13 of precursor
- the source 1 3 generates
- a precursor gas for example a tantalum halide vapor, from a tantalum halide
- the compound is one that is in a solid state when at standard
- the precursor source is maintained, preferably by
- the vapor pressure is one that is itself sufficient to deliver the precursor vapor to the reaction chamber, preferably without the use of a
- the metering system 1 5 maintains a flow of the precursor gas vapor
- the reaction chamber 1 1 is a generally conventional CVD reactor and
- a vacuum chamber 20 that is bounded by a vacuum tight chamber
- a substrate support or susceptor 22 on the chamber 20 .
- a substrate support or susceptor 22 on the chamber 20 .
- chamber 20 is maintained at a vacuum appropriate for the performance of a CVD
- reaction chamber 1 1 is in the range of from 0.2 to 5.0 Torr.
- the vacuum is
- the precursor gas source 1 3 includes a sealed evaporator 30 that
- the vessel 31 includes a cylindrical evaporation vessel 31 having a vertically oriented axis 32.
- the vessel 31 is bounded by a cylindrical wall 33 formed of a high temperature
- the wall 33 has a flat circular
- the cover 36 is sealed to a flange ring 37 that is integral to
- seal 38 such as a HELICOFLEX seal, which is formed of a C-shaped nickel tube
- a conventional elastomeric O-ring seal may be used to seal a conventional elastomeric O-ring seal.
- the source 1 3 is preferably an inert gas such as He or Ar.
- precursor material such as tantalum fluoride, chloride or
- the vessel 31 is filled with tantalum halide vapor by
- the halide is supplied as
- TaX mass 40 if a liquid, remains constant regardless of the level of depletion of
- the delivery system 1 2 is not limited to direct delivery of a
- precursor 40 but can be used in the alternative for delivery of precursor 40 along
- Such a gas may be hydrogen (H 2 ) or an inert gas such as helium (He)
- the bottom 35 of the wall 33 is maintained in thermal communication with a
- a lower vapor pressure such as about 1 Torr when a carrier gas is used.
- a vapor pressure can be maintained at the preferred pressure of 5 Torr or above
- the desired temperature is at least about 95 ° C for TaF 5 , the
- desired temperature is at least about 1 45 °C for TaCI 5 , and the desired
- Tal 5 pentaiodide
- a temperature of 1 80 °C is assumed to be
- separately controlled heater 45 that is in thermal contact with the outside of the
- trapped air space 46 which is contained between the chamber wall 33 and a surrounding concentric outer aluminum wall or can 47.
- the can 47 is further
- tantalum or titanium haiide compound tantalum or titanium haiide compound.
- the vapor flow metering system 1 5 includes a delivery tube 50 of
- the tube 50 extends from the precursor gas source 1 3 to which
- temperature of the precursor material 40 for example, to 1 95 °C.
- baffle plate 51 in which is centered a
- circular orifice 52 which preferably has a diameter of approximately 0.089
- gauge 1 56 to gauge 2 57 The pressure drop from gauge 1 56 to gauge 2 57 is regulated by control valve 53. This pressure drop after control valve 53 through orifice 52 and into
- reaction chamber 1 1 is greater than about 10 milliTorr and will be proportional to
- a shut-off valve 54 is provided in the line 50 between the
- Pressure sensors 55-58 are provided in the system 1 0 to provide
- the pressure sensors include
- shut-off valve 54 to monitor the pressure in the evaporation vessel 31 .
- a pressure sensor 56 is connected to the tube 50 between the control valve 53
- pressure sensor 57 is connected to the tube 50 between the baffle 51 and the
- reactor inlet 1 6 to monitor the pressure downstream of the orifice 52.
- pressure sensor 58 is connected to the chamber 20 of the reaction chamber to
- the reaction chamber is achieved by the controller 60 in response to the pressures
- pressure sensors 56 and 57 can be determined from the ratio of the
- the tube 52 is a function of only the pressure monitored by pressure sensor 57.
- the controller 60 by interpreting the process conditions.
- the flow rate of precursor gas can be determined by
- the controller 60 through calculation.
- precursor gas is calculated by retrieving flow rate data from lookup or multiplier
- variable orifice control valve 53 the CVD chamber pressure through evacuation
- the solid TaF 5 , TaCI 5 and TaBr 5 precursor As shown in FIG. 1 , the solid TaF 5 , TaCI 5 and TaBr 5 precursor
- TaF 5 , TaCI 5 or TaBr 5 was delivered directly, that is, without the use of a carrier
- reaction chamber 1 1 was heated to a temperature of at least about 1 00° C to
- reaction chamber 1 1 was accomplished by heating the solid tantalum halide
- precursor 40 to a temperature in the range of about 95 ° C-205 °C, the choice
- a sufficient vapor pressure was in the range of
- TaF 5 is a liquid while
- FIG. 2 shows the relationship between the measured vapor pressure
- the desired pressure was greater than about
- TaF 5 , TaCI 5 and TaBr 5 was desirably low enough to be able to deposit
- tantalum in the absence of a carrier gas but yet sufficient to maintain a constant
- substrate 23 was the RF ground.
- the selected TaX 5 vapor was combined with
- process gases in addition to H 2 .
- the thermal CVD is stopped at regular intervals to plasma treat the
- a parallel plate RF -20- discharge is used where the driven electrode is the gas delivery showerhead and
- the wafer stage is the RF ground.
- H 2 was used to plasma treat the film at a flow
- PTTCVD improves the film's morphology from a relatively rough structure to a
- the resistance further decreased to 1 100 ⁇ cm when a 45 A thick
- TaN x film per cycle was subjected to plasma treatment. Similarly, the
- a TaN x film deposited using a TaCI 5 precursor would be
- Plasma treatment times in the range of between 1 0 seconds and
- the microstructure of the TaN x film also changed from a rough to a
- a seamless fiim is one that contains no cracks. The step coverage
- An ideal step coverage is 1 .0 or 1 00%, representing identical thickness
- TaCI 5 based fiims would be expected to exhibit the same
- FIG. 8 is a scanning electron micrograph (SEM) image of a 1 1 50
- FIG. 9 is a SEM image of a
- FIG. 10 is a SEM image
- the TaN x film will be integral, that is, in direct contact with copper, little or no
- TaN x attack or etching of the copper should take place during TaN x deposition.
- FIG. 1 1 shows a TaF 5 based Ta/TaN x film deposited directly on
- FIG. 1 2 shows a TaCI 5 based TaN x film on deposited directly
- FIG. 1 3 shows a TaBr 5 based Ta/TaN x fiim deposited
- FIG. 14 indicates that the thermal TaN x film is nitrogen rich (x > 1 .0),
- bromide concentration was determined to be less than 2 atomic percent.
- One contributing factor may be the nitrogen rich
- an amorphous material defined as having a low fraction of crystalline
- the method is based on the vapor delivery of either TaF 5 , TaCI 5
- step coverage low residual impurity concentrations, sufficiently high
- H 2 RF plasma treatment also significantly improved the microstructure of the
- Ta films may be deposited by PECVD, and TaN films
- thermal CVD chemical vapor deposition
- PECVD plasma treated thermal
- HALIDE PRECURSORS PECVD OF TaN FILMS FROM TANTALUM HALIDE
- Ta/TaN x bilayers may be deposited by CVD as disclosed in the
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000613856A JP4763894B2 (en) | 1999-04-27 | 2000-04-26 | Formation of CVD tantalum nitride plugs from tantalum halide precursors. |
KR1020017013565A KR100668903B1 (en) | 1999-04-27 | 2000-04-26 | Cvd tantalum nitride plug formation from tantalum halide precursors |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US30064799A | 1999-04-27 | 1999-04-27 | |
US09/300,647 | 1999-04-27 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2000065126A1 true WO2000065126A1 (en) | 2000-11-02 |
WO2000065126A9 WO2000065126A9 (en) | 2002-03-14 |
Family
ID=23159994
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2000/011281 WO2000065126A1 (en) | 1999-04-27 | 2000-04-26 | Cvd tantalum nitride plug formation from tantalum halide precursors |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP4763894B2 (en) |
KR (1) | KR100668903B1 (en) |
TW (1) | TW593733B (en) |
WO (1) | WO2000065126A1 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003203878A (en) * | 2001-10-24 | 2003-07-18 | Tokyo Electron Ltd | Method for improving adhesion and durability of cvd tantalum and tantalum nitride modulated film by plasma treatment |
KR100449782B1 (en) * | 2001-07-19 | 2004-09-22 | 삼성전자주식회사 | Method of depositing an atomic layer, and method of depositing a thin layer and a metal layer using the same |
US7094680B2 (en) * | 2001-02-02 | 2006-08-22 | Applied Materials, Inc. | Formation of a tantalum-nitride layer |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0818560A2 (en) * | 1996-07-09 | 1998-01-14 | Applied Materials, Inc. | Construction of a film on a semiconductor wafer |
EP0869544A2 (en) * | 1997-03-31 | 1998-10-07 | Motorola, Inc. | Method for depositing a diffusion barrier |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06349774A (en) * | 1993-06-08 | 1994-12-22 | Sony Corp | Method of forming buried plug |
JP3027946B2 (en) * | 1997-01-24 | 2000-04-04 | 日本電気株式会社 | Semiconductor device and manufacturing method thereof |
TW380308B (en) * | 1997-07-03 | 2000-01-21 | Motorola Inc | Semiconductor device and a process for forming the device |
JP3129251B2 (en) * | 1997-09-19 | 2001-01-29 | 日本電気株式会社 | Contact plug formation method |
-
2000
- 2000-04-26 WO PCT/US2000/011281 patent/WO2000065126A1/en active IP Right Grant
- 2000-04-26 JP JP2000613856A patent/JP4763894B2/en not_active Expired - Fee Related
- 2000-04-26 TW TW089107862A patent/TW593733B/en not_active IP Right Cessation
- 2000-04-26 KR KR1020017013565A patent/KR100668903B1/en not_active IP Right Cessation
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0818560A2 (en) * | 1996-07-09 | 1998-01-14 | Applied Materials, Inc. | Construction of a film on a semiconductor wafer |
EP0869544A2 (en) * | 1997-03-31 | 1998-10-07 | Motorola, Inc. | Method for depositing a diffusion barrier |
Non-Patent Citations (2)
Title |
---|
HIROSHI FUNAKUBO ET AL: "PREPARATION OF TANX-TIN FILMS BY CVD", JOURNAL OF THE CERAMIC SOCIETY OF JAPAN, INTERNATIONAL EDITION,JP,FUJI TECHNOLOGY PRESS, TOKYO, vol. 98, no. 2, 1 February 1990 (1990-02-01), pages 173 - 178, XP000162310, ISSN: 0912-9200 * |
KALOYEROS A E ET AL: "Tantalum nitride films grown by inorganic low temperature thermal chemical vapor deposition-diffusion barrier properties in copper metallization", JOURNAL OF THE ELECTROCHEMICAL SOCIETY, JAN. 1999, ELECTROCHEM. SOC, USA, vol. 146, no. 1, pages 170 - 176, XP002145088, ISSN: 0013-4651 * |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7094680B2 (en) * | 2001-02-02 | 2006-08-22 | Applied Materials, Inc. | Formation of a tantalum-nitride layer |
KR100449782B1 (en) * | 2001-07-19 | 2004-09-22 | 삼성전자주식회사 | Method of depositing an atomic layer, and method of depositing a thin layer and a metal layer using the same |
JP2003203878A (en) * | 2001-10-24 | 2003-07-18 | Tokyo Electron Ltd | Method for improving adhesion and durability of cvd tantalum and tantalum nitride modulated film by plasma treatment |
JP4544817B2 (en) * | 2001-10-24 | 2010-09-15 | 東京エレクトロン株式会社 | Method for improving adhesion and durability of CVD tantalum and tantalum nitride controlled films by plasma treatment |
Also Published As
Publication number | Publication date |
---|---|
JP2002543580A (en) | 2002-12-17 |
TW593733B (en) | 2004-06-21 |
WO2000065126A9 (en) | 2002-03-14 |
JP4763894B2 (en) | 2011-08-31 |
KR20020010612A (en) | 2002-02-04 |
KR100668903B1 (en) | 2007-01-12 |
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