WO2000058701A1 - Temperature measurement system - Google Patents
Temperature measurement system Download PDFInfo
- Publication number
- WO2000058701A1 WO2000058701A1 PCT/JP2000/002005 JP0002005W WO0058701A1 WO 2000058701 A1 WO2000058701 A1 WO 2000058701A1 JP 0002005 W JP0002005 W JP 0002005W WO 0058701 A1 WO0058701 A1 WO 0058701A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- light
- temperature
- measurement system
- photodetector
- temperature measurement
- Prior art date
Links
- 238000009529 body temperature measurement Methods 0.000 title claims description 33
- 230000003287 optical effect Effects 0.000 claims abstract description 32
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 20
- 238000010438 heat treatment Methods 0.000 claims abstract description 17
- 239000000463 material Substances 0.000 claims abstract description 17
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims abstract description 16
- 230000005855 radiation Effects 0.000 claims description 35
- 238000001514 detection method Methods 0.000 claims description 18
- 238000004364 calculation method Methods 0.000 claims description 12
- 238000005259 measurement Methods 0.000 claims description 12
- 230000005540 biological transmission Effects 0.000 claims description 9
- 238000005192 partition Methods 0.000 claims description 2
- 230000000694 effects Effects 0.000 abstract description 10
- 239000005350 fused silica glass Substances 0.000 abstract 2
- 230000008030 elimination Effects 0.000 abstract 1
- 238000003379 elimination reaction Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 description 15
- 238000012545 processing Methods 0.000 description 10
- 238000010521 absorption reaction Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 230000035945 sensitivity Effects 0.000 description 6
- 239000013307 optical fiber Substances 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 229910052736 halogen Inorganic materials 0.000 description 3
- 150000002367 halogens Chemical class 0.000 description 3
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/0003—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/08—Optical arrangements
- G01J5/0801—Means for wavelength selection or discrimination
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/0003—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter
- G01J5/0007—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter of wafers or semiconductor substrates, e.g. using Rapid Thermal Processing
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/04—Casings
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/04—Casings
- G01J5/046—Materials; Selection of thermal materials
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/08—Optical arrangements
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/08—Optical arrangements
- G01J5/0801—Means for wavelength selection or discrimination
- G01J5/0802—Optical filters
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/08—Optical arrangements
- G01J5/0818—Waveguides
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/08—Optical arrangements
- G01J5/0875—Windows; Arrangements for fastening thereof
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/02—Constructional details
- G01J5/08—Optical arrangements
- G01J5/0887—Integrating cavities mimicking black bodies, wherein the heat propagation between the black body and the measuring element does not occur within a solid; Use of bodies placed inside the fluid stream for measurement of the temperature of gases; Use of the reemission from a surface, e.g. reflective surface; Emissivity enhancement by multiple reflections
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/27—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands using photo-electric detection ; circuits for computing concentration
- G01N21/274—Calibration, base line adjustment, drift correction
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/12—Heads, e.g. forming of the optical beam spot or modulation of the optical beam
- G11B7/13—Optical detectors therefor
- G11B7/131—Arrangement of detectors in a multiple array
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
- G01J2005/202—Arrays
Definitions
- the light-receiving element of the radiation thermometer simultaneously detects not only heat radiation from the wafer itself but also radiation from the lamp heating source, so the SZN ratio for temperature measurement cannot be sufficiently increased.
- An example of a conventional temperature measuring system for solving this problem is described in Japanese Patent Application Laid-Open No. H10-111186.
- the technology disclosed herein includes a filter for cutting light of a specific wavelength provided between a light transmission window provided at the bottom of a chamber and a lamp heating source, and the light-receiving element side of a radiation thermometer.
- a filter that selectively transmits light of a specific wavelength is provided to eliminate the effects of stray light.
- the present invention has been made in view of the above circumstances, and has as its object to provide a temperature measurement system capable of performing accurate temperature measurement with a low-cost and simple structure.
- a photodetector that selectively detects light in a wavelength region near a specific wavelength region, and a calculation unit that calculates the temperature of the measurement target based on the output of the photodetector.
- a temperature measurement system is provided.
- the window material itself may have a property of selectively transmitting light in a specific wavelength region
- the light detecting means may have a function of selectively detecting light in a wavelength region other than the wavelength region near the specific wavelength region. .
- the temperature measurement system includes a light guide disposed in the chamber and transmitting heat radiation from the object to be measured, an optical transmission medium that guides light obtained by the light guide to a light detector, May be further provided.
- the window material forms at least a part of a wall that partitions the chamber. This is advantageous in reducing cost and size.
- the window material is preferably made of quartz glass having a function of absorbing light in a predetermined wavelength region, for example, quartz glass containing a hydroxyl group.
- the light detecting means may further include an optical filter for limiting a wavelength range of light incident on the light receiving element.
- an optical filter for limiting a wavelength range of light incident on the light receiving element.
- the window material is made of quartz glass containing a hydroxyl group, it has a function of selectively transmitting light near a wavelength of 2.7 to the optical filter according to the light absorption characteristics of this quartz glass. Is selected.
- a temperature measurement system that is housed in a chamber and measures the temperature of a measurement target heated by a lamp heating source, heat radiation from the measurement target is measured.
- a photodetector having a light receiving element for receiving light, and selectively detects light having a wavelength of 1.5 m or more, more preferably 2.0 or more
- a temperature measurement system comprising: a light detection unit; and a calculation unit that calculates a temperature of the measurement target based on an output of the light detector.
- the light detection means can further include an optical filter that limits the wavelength region of the light incident on the light receiving element.
- FIG. 1 is a diagram schematically illustrating an example of a CVD processing device including a temperature measurement system according to a first embodiment of the present invention
- FIG. 3 is a diagram schematically showing another example of the CVD processing device including the temperature measurement system according to the first embodiment of the present invention
- FIG. 4 is a diagram schematically showing still another example of a CVD processing device including the temperature measurement system according to the second embodiment of the present invention
- FIG. 5 is a graph illustrating a method of calculating the contribution of the lamp stray light included in the output voltage of the light receiving element.
- FIG. 7 is a diagram showing a radiation intensity distribution of radiation light emitted from an object at each temperature
- FIG. 8 is a diagram showing another example of a CVD processing apparatus provided with a temperature measurement system according to the second embodiment of the present invention.
- FIG. 4 is a diagram schematically showing an example of FIG. Description of the preferred embodiment
- a window 6 made of quartz glass containing a hydroxyl group is provided. It is known that quartz glass containing hydroxyl groups has an absorption band around 270 nm (2.7 m) due to vibration of ⁇ -H, and the intensity of absorption is proportional to the amount of hydroxyl groups contained. . In addition, the quartz glass containing a hydroxyl group also has an absorption band near 220 nm due to the vibration of Si— ⁇ —H, and the absorption intensity in this absorption band is near 270 nm. It is much weaker than the strength of the absorption in the band.
- Figure 2 is a graph showing the wavelength dependence of the light transmittance of lcm-thick quartz glass for each hydroxyl content ("The World of Quartz Glass", Shin Kuzuu, Industrial Research Institute (1996)). Quote) .
- the window material 6 a quartz glass having a hydroxyl group content of 50 ppm or more.
- the quartz glass may be formed by a melting method, a synthetic quartz glass, or may be manufactured by a VAD method.
- a means for selectively transmitting light near the wavelength of 270 nm that is, light of a wavelength other than light in the specific wavelength region.
- the window material 6 a means for selectively transmitting light near the wavelength of 270 nm, that is, light of a wavelength other than light in the specific wavelength region.
- the term “specific wavelength region” is used to mean a wavelength region other than the wavelength region near the wavelength of 270 nm, the “wavelength around the wavelength of 270 nm” It is possible to constitute a means for selectively transmitting light of a wavelength other than the region, that is, light of a specific wavelength region. " It can also be expressed. )
- a susceptor 8 for mounting the wafer 1, that is, the object to be processed is provided.
- the susceptor 8 is preferably formed of black A 1 N, which is advantageous in that the radiation characteristics of the susceptor 8 are close to those of a black body and that the lamp light is difficult to transmit.
- the susceptor 8 has a hole 10 that extends from the side surface toward the center and terminates.
- a light guide 12 for condensing radiated light from the susceptor 8, that is, a light guide is inserted.
- the light guide 12 extends through the wall 1 to the outside of the chamber 2.
- the configuration in which the light guide 12 is inserted into the hole 10 is advantageous in that the amount of lamp light reaching the light guide 12 is minimized.
- the light guide 16 is connected to the light guide 12 via an optical fiber 14, that is, an optical transmission medium.
- the photodetector 16 has a light receiving element 18.
- the optical detector 16 is provided with an optical filter 19 in front of the light receiving element 18.
- thermopile using Sb, Bi (antimony, bismuth) is used as the light-receiving element 18 and a multilayer interference filter is used as the optical filter 19, so that the light-receiving element 18 has a wavelength of about 2700 nm.
- Light detecting means for selectively detecting light in the above wavelength range.
- the lamp 22 is turned on, and the susceptor 8 is heated by the radiant heat of this lamp.
- the susceptor 8 is heated, the wafer 1 placed on the susceptor 8 is heated.
- heat radiation is generated from the susceptor 8 corresponding to the temperature.
- the heat radiation light is condensed by the optical guide 12, passes through the optical fiber 14 and the optical filter 19 sequentially, and enters the light receiving element 18.
- the output of the light receiving element 18 is input to the calculation unit 26.
- the calculation unit 26 calculates the temperature of the susceptor 8 based on the output of the light receiving element 18 according to Planck's radiation law.
- the output control unit 28 supplies electric power to the lamp 22 based on the calculation result of the calculation unit 26 so that the temperature of the susceptor 8 becomes a predetermined value.
- the light radiated from the lamp 22 is absorbed by the window member 6 in a wavelength region near 270 nm (ie, a specific wavelength region), and the other wavelength regions reach the susceptor 8.
- the lamp light reaching the susceptor 8 heats the susceptor 8 and transmits through the susceptor 8 to be introduced into the light guide 12 to a small extent.
- the light introduced into the light guide 12 is radiated light from the susceptor 8 and lamp light in which the wave length region near 270 nm is cut.
- the optical filter 19 is provided in front of the light receiving element 18, only the wavelength region near 270 nm of the light introduced into the light guide 12 reaches the light receiving element 18. I do. That is, little or no lamp light reaches the light receiving element 18. Therefore, the effect of stray light from the lamp 22 can be eliminated from the output of the light receiving element 18 and the temperature of the susceptor 8 can be accurately measured.
- the light detecting means for selectively detecting the light in the wavelength region near 2700 nm is configured by combining the light receiving element 18 and the optical filter 19, If the light receiving sensitivity characteristics of the light receiving element 18 are sufficient to achieve the purpose of selectively detecting light in the vicinity of a specific wavelength region, it is possible to configure the light detecting means without the light filter 19. . If a suitable light receiving element 18 is used, a photodiode may be used instead of the thermopile.
- quartz glass containing a hydroxyl group is used as a material having an optical filter function of absorbing light in a specific wavelength region, but other materials such as sapphire may be used as the window material. May be used. Also in this case, the light receiving element 18 and the optical filter 19 may be appropriately combined in accordance with the absorption wavelength of the window material 6.
- FIG. 4 is a diagram schematically showing a CVD processing apparatus provided with a temperature measurement system according to the present invention.
- components having the same or similar functions as the components shown in FIGS. 1 and 3 are denoted by the same reference numerals.
- the CVD processing apparatus has a chamber 2.
- a CVD process such as a film forming process is performed on the wafer 1
- the atmosphere in the chamber 2 is isolated from the atmosphere outside the chamber 2.
- the chamber 2 is defined by a wall 4.
- a light-transmitting window material 6 A made of quartz glass is provided.
- the window member 6A does not need to have an absorption peak in a specific wavelength region.
- the chamber 2 is provided with members such as a gas shower 3 for supplying a processing gas to the wafer 1, but will not be described in detail here because it is not directly related to the gist of the present invention.
- the susceptor 8 has a hole 10 extending from its side toward the center and terminating. Has been established. In the hole 10, a light guide 12 for condensing radiated light from the susceptor 8, that is, a light guide is inserted.
- the light guide 12 extends through the wall 1 to the outside of the chamber 2.
- Light guide 1 2 The configuration inserted into L 10 is advantageous in that the amount of lamp light reaching the light guide 12 is minimized.
- a lamp chamber 20 is provided below the chamber 2.
- the lamp chamber 20 is provided with a lamp 22A, that is, a lamp heating source.
- Lamp 22A is a halogen lamp.
- a temperature controller 24 is connected to the photodetector 16A.
- the temperature controller is a calculator 24 that calculates the temperature of the susceptor 8 based on the principle of Planck's radiation law, and a lamp 2 based on the temperature of the susceptor 8 calculated by the calculator 26.
- an output control unit 28 for controlling the power supplied to the power supply 2.
- the lamp 22 A is turned on, and the susceptor 8 is heated by the radiant heat of the lamp.
- the wafer 1 placed on the susceptor 8 is heated.
- susceptor 8 When susceptor 8 is heated, susceptor 8 generates heat radiation corresponding to its temperature.
- the heat radiation light is condensed by the light guide 12, passes through the optical fiber 14 and the optical filter 19 A in order, and enters the light receiving element 18 A.
- the output of the light receiving element 18 A is input to the calculation unit 26.
- the calculation unit 26 calculates the temperature of the susceptor 8 based on the output of the light receiving element 18 A according to Planck's radiation law.
- the output control unit 28 supplies power to the lamp 22A based on the calculation result of the arithmetic unit 26 so that the temperature of the susceptor 8 becomes a predetermined value. Supply.
- the light emitted from lamp 22A reaches Susep E8.
- the lamp light reaching the susceptor 8 heats the susceptor 8 and transmits through the susceptor 8 to be introduced into the light guide 12 though a small amount. Therefore, the light introduced into the light guide 12 becomes the radiation light from the susceptor 8 and the lamp light.
- the effect of the lamp light on the temperature measurement result by being included in the light introduced into the light guide 12 can be obtained as follows.
- the graph of FIG. 5 shows the change over time of the output voltage Vpd of the light receiving element 18 A and the temperature TS of the susceptor 8.
- the power W supplied to the lamp 22A is stable and has a substantially constant value Wi
- the temperature TS of the susceptor 8 has a stable value Ti
- the power W supplied to the lamp 22A is set to 0 at the time tl. Then, at that moment, the light from the lamp 22A is not input to the light receiving element 18A, so that the output voltage Vpd of the light receiving element 18A sharply drops from Vi to Vi-AVi. After that, the output voltage Vpd of the light-receiving element 18 A gradually decreases as the temperature TS of the susceptor 8 decreases. The temperature TS of the susceptor 8 gradually decreases after stopping the power supply to the lamp 22A.
- the output voltage drop AVi of the light-receiving element 18 A at the moment when the power supply to the lamp 22 A is stopped corresponds to the contribution of the lamp light included in the output voltage Vi of the light-receiving element 18 A in the time range tA. I do.
- R ViZ (Vi- ⁇ Vi) is defined as the intensity ratio index of the radiated light from the lamp 22A to the radiated light from the susceptor 8.
- This intensity ratio index R is a function of the wavelength range detected by the light detection means. Table 1 shows the relationship. table 1
- the intensity ratio index R is 1 or less when the detection wavelength region is 1.5 xm or more, and 0.1 when the detection wavelength region is 2.0 m or more. It is as follows. In other words, a significant improvement is observed compared to the case where the detection wavelength region is less than 1.5 m.
- the emission intensity distribution of the emission light (hereinafter, also referred to as “lamp light”) of a halogen lamp having a color temperature of usually 2000 to 300 ° C. Focusing on the relationship with the radiation intensity distribution of the radiated light from the suscept evening based on the evening temperature (usually 300 ° (: ⁇ 60 Ot :)) By removing the long region, even if the lamp light enters the light receiving element as stray light, the effect can be minimized.
- the emission intensity of the halogen lamp light is strongest in the wavelength range of 0.5 to 1.0 m, so the effect of stray light is minimized by excluding this wavelength region from the detection wavelength region. Limit. Furthermore, the radiation intensity from the susceptor 8 outside the wavelength range of 0.5 to 1.0 m and usually set in the range of 300 ° C to 600 ° C is the strongest. The influence of stray light can be further suppressed by setting the range of 1.5 to 6 zm as the detection wavelength range. As described above, the detection wavelength region is preferably 1.5 / m or more, and more preferably 2.Om or more.
- the wavelength range detected by the light detection unit is By optimizing, the effect of stray light due to lamp light can be eliminated, and highly accurate temperature measurement can be performed.
- the temperature measurement target is the susceptor 8 on which the wafer 1 to be processed is placed, but the application of the present invention is not limited to this.
- the light guide 12 may be arranged so as to detect the radiated light from the wafer 1 which is the object to be processed. Further, the light guide 12 is arranged above or obliquely above the wafer 1 in the chamber 2 so as to be separated from the wafer 1 so that the light guide 12 detects radiation light from the wafer 1. You may. In this case, substantially the same effects as in the above embodiment can be obtained.
- the light detecting means for selectively detecting light in a predetermined wavelength region is configured by combining the light receiving element 18A and the optical filter 19A. If the light-receiving sensitivity characteristic of 8 A is sufficient to achieve the purpose of selectively detecting light in the vicinity of a specific wavelength region, the light detecting means can be configured without the optical filter 19 A.
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020017012533A KR20010110480A (en) | 1999-03-30 | 2000-03-30 | Temperature measurement system |
AU34554/00A AU3455400A (en) | 1999-03-30 | 2000-03-30 | Temperature measurement system |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
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JP9010499 | 1999-03-30 | ||
JP9012099 | 1999-03-30 | ||
JP11/90104 | 1999-03-30 | ||
JP11/90120 | 1999-03-30 |
Publications (1)
Publication Number | Publication Date |
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WO2000058701A1 true WO2000058701A1 (en) | 2000-10-05 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2000/002005 WO2000058701A1 (en) | 1999-03-30 | 2000-03-30 | Temperature measurement system |
Country Status (3)
Country | Link |
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KR (1) | KR20010110480A (en) |
AU (1) | AU3455400A (en) |
WO (1) | WO2000058701A1 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7169643B1 (en) | 1998-12-28 | 2007-01-30 | Seiko Epson Corporation | Semiconductor device, method of fabricating the same, circuit board, and electronic apparatus |
CN114441591A (en) * | 2022-01-05 | 2022-05-06 | 电子科技大学 | Device and method for testing thermal radiation cooling rate of high-temperature object |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100681693B1 (en) * | 2005-10-21 | 2007-02-09 | 재단법인 포항산업과학연구원 | Error source radiance optical filtering method and system in infrared radiation thermometer |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS60131430A (en) * | 1983-12-19 | 1985-07-13 | Dainippon Screen Mfg Co Ltd | Measuring device of temperature of semiconductor substrate |
JPH0442025A (en) * | 1990-06-07 | 1992-02-12 | M Setetsuku Kk | Method and apparatus for measuring temperature of wafer |
US5154512A (en) * | 1990-04-10 | 1992-10-13 | Luxtron Corporation | Non-contact techniques for measuring temperature or radiation-heated objects |
WO1992021144A1 (en) * | 1991-05-17 | 1992-11-26 | Materials Research Corporation | Wafer processing cluster tool batch preheating and degassing method and apparatus |
JPH07134069A (en) * | 1993-11-10 | 1995-05-23 | Hitachi Ltd | Method for monitoring temperature of substrate |
JPH10170343A (en) * | 1996-12-06 | 1998-06-26 | Sony Corp | Temperature measuring apparatus |
-
2000
- 2000-03-30 KR KR1020017012533A patent/KR20010110480A/en not_active Application Discontinuation
- 2000-03-30 WO PCT/JP2000/002005 patent/WO2000058701A1/en not_active Application Discontinuation
- 2000-03-30 AU AU34554/00A patent/AU3455400A/en not_active Abandoned
Patent Citations (6)
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JPS60131430A (en) * | 1983-12-19 | 1985-07-13 | Dainippon Screen Mfg Co Ltd | Measuring device of temperature of semiconductor substrate |
US5154512A (en) * | 1990-04-10 | 1992-10-13 | Luxtron Corporation | Non-contact techniques for measuring temperature or radiation-heated objects |
JPH0442025A (en) * | 1990-06-07 | 1992-02-12 | M Setetsuku Kk | Method and apparatus for measuring temperature of wafer |
WO1992021144A1 (en) * | 1991-05-17 | 1992-11-26 | Materials Research Corporation | Wafer processing cluster tool batch preheating and degassing method and apparatus |
JPH07134069A (en) * | 1993-11-10 | 1995-05-23 | Hitachi Ltd | Method for monitoring temperature of substrate |
JPH10170343A (en) * | 1996-12-06 | 1998-06-26 | Sony Corp | Temperature measuring apparatus |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7169643B1 (en) | 1998-12-28 | 2007-01-30 | Seiko Epson Corporation | Semiconductor device, method of fabricating the same, circuit board, and electronic apparatus |
CN114441591A (en) * | 2022-01-05 | 2022-05-06 | 电子科技大学 | Device and method for testing thermal radiation cooling rate of high-temperature object |
Also Published As
Publication number | Publication date |
---|---|
KR20010110480A (en) | 2001-12-13 |
AU3455400A (en) | 2000-10-16 |
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