WO2000057472A1 - Method of connecting a connecting wire to a contact of an integrated circuit - Google Patents

Method of connecting a connecting wire to a contact of an integrated circuit Download PDF

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Publication number
WO2000057472A1
WO2000057472A1 PCT/DE2000/000907 DE0000907W WO0057472A1 WO 2000057472 A1 WO2000057472 A1 WO 2000057472A1 DE 0000907 W DE0000907 W DE 0000907W WO 0057472 A1 WO0057472 A1 WO 0057472A1
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WO
WIPO (PCT)
Prior art keywords
connection
contact
solder layer
integrated circuit
solder
Prior art date
Application number
PCT/DE2000/000907
Other languages
German (de)
French (fr)
Inventor
Holger HÜBNER
Vaidyanathan Kripesh
Original Assignee
Infineon Technologies Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies Ag filed Critical Infineon Technologies Ag
Publication of WO2000057472A1 publication Critical patent/WO2000057472A1/en

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    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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Definitions

  • the invention relates to a method for connecting a connection end of a connecting wire to a connection contact of an electrically active region of an integrated circuit.
  • the invention further relates to an integrated circuit which has a connection contact and a connection wire provided on the connection contact.
  • connection contacts are made by means of wire bonding.
  • connection contacts designed as bond surfaces are provided, the surface of which has aluminum, in particular the metal alloy AlSiCu. Gold wires can be welded directly onto this surface, which are attached to the housing side of a leadframe on the other side.
  • the erfmdungsgeordere method for connecting a terminal ⁇ end of a lead wire to a terminal contact of an electrical active region of an integrated circuit has the following steps:
  • the invention is based on the basic idea of providing a very thin solder layer, which in particular has tin or indium.
  • the tin forms a copper 3-tin connection with adjacent copper from the area of the connection contact as soon as the area of the connection end of the connection wire and the surface of the connection contact is heated.
  • the heating is preferably carried out at a temperature which is below the melting temperature of the copper 3-Zmnverbmdung.
  • the copper 3-Zmnverbmdung which creates the connection between the lead wire and the terminal contact, arises from a diffusion-controlled process.
  • the solder layer is designed so thin that its thickness is less than 10 ⁇ m.
  • the solder layer is preferably kept thinner than 5 .mu.m, although thicknesses of less than a micrometer (for example 200 nm) are also conceivable. Thereby, the impact of the effect is vermie ⁇ , according to which in the first formation of a copper-tin-3- phase, this attaches to the copper of the pad and acts as a diffusion barrier. In the case of thicker solder layers, this diffusion barrier counteracts the further formation of copper-3-Zmn phase.
  • the chip as a whole no longer needs to be heated to a temperature of a few hundred degrees Celsius, which leads to undesired oxidation in the case of copper contacts.
  • a copper-6-Zmn-5 phase can also be formed in a first step until a connection with a predetermined basic strength is obtained between the connection contact and the connection wire.
  • the entire integrated circuit is stored in such a way that the final stable copper 3-Zmn phase is formed essentially completely in the solder layer.
  • the diffusion process is preferably carried out in such a way that the temperature is above the melting point of tin or indium. Accordingly, a preferred temperature amounts on heating rms of the area of the terminal end of the lead wire and / or the surface of the terminal fitting 25 ⁇ ° C and preferably up to 300 ° C. If a tin-indium mixture is used, a temperature of approximately 120 ° C. to 130 ° C. can also be used.
  • the step of heating the area of the connection end of the connection wire and the surface of the connection contact can be provided in a first sub-step as brief local heating, the heating to a temperature above the melting point of the low-melting components te or the solder of the solder-metal connection.
  • a first sub-step superimposed on the overall integrated circuit ⁇ circle - preferably with exclusion of oxygen - in egg ⁇ ner temperature at which the first sub-step erge- Bende copper-6-Zmn-5-m, a final phase stable copper fer-3-Zmn phase.
  • the step of long-term heating can take place both at a temperature below the melting point of the low-melting component and - in the event that the entire solder-metal compound has not yet been converted in the first step - at a higher temperature.
  • Long-term deposition can also take place at elevated temperature or in an oxygen-free environment.
  • a holding pressure force can be exerted on the connecting wire provided in the area of the connecting contact by means of a press ram.
  • the method according to the invention can also be carried out under a non-oxidizing atmosphere, for example with argon or nitrogen, in which case the integrated circuit can subsequently be packed in a housing or in a casting compound.
  • a non-oxidizing atmosphere for example with argon or nitrogen
  • the solder is not heated above its melting point and then cooled until it solidifies and then forms the connection between the connecting contact and the connecting wire. Rather, the solder is heated above its melting point and held at this temperature until the solder layer solidifies due to a chemical reaction with the material of the connection contact and / or with the material of the connection wire. Intermetallic phases such as copper-3-Zmn are formed.
  • the invention can also be implemented with solder layers in which metals such as indium, gallium, mercury, lead, etc. are provided.
  • soldering process according to the invention is also referred to as the "process of isothermal solidification" or "SOLID process".
  • the cheap and tried-and-tested wire bonding process can therefore also be used advantageously for copper metallization on semiconductor substrates.
  • the machines previously used can still be used. In this case, only need the bonding wires and the terminal contacts with a low melting solder such as Sn ⁇ layer or be coated with a Sn / In alloy.
  • wires can be processed from materials that are suitable for the SOLID process, such as from copper, gold,
  • Silver, nickel and other alloys for example, from the metals mentioned above and other metals.
  • a coating with suitable adhesive layers can be provided on the bonding wire or on the connection contact.
  • suitable adhesive layers for aluminum wires are, for example, titanium, titanium nitride and copper, each preferably 50 nm.
  • the solder layer is preferably applied as the last layer.
  • the connecting wire can have the shape of a flat strip, a bead-shaped thickening being formed at one end connected to a connecting contact, which is appropriate for a connecting wire with a circular cross-section.
  • the step of providing a thin solder layer can also be carried out with the aid of electroless deposition of solder material.
  • solder material can also be made with a dipping process or with laminating or plating.
  • inventive shaped Verfanren doing a Ausgestal ⁇ be emphasized tung gens of the terminal end of the lead wire with the surface of the terminal fitting is provided the step of melting of at ⁇ circuit forming a bead of melted in before the step of Caribbeanbrm-. In this case, the hot melt bead is connected to the connection contact.
  • the thermal energy stored in the molten pearl causes the diffusion process of the metal from the connecting wire m the solder layer.
  • FIG. 1 shows a cross section through a first integrated circuit at the time of its completion
  • FIG. 2 shows a cross section through a second integrated circuit at the time of its completion
  • FIG. 3 shows a cross section through a third integrated circuit according to the invention at the time of its completion.
  • FIG. 1 shows a cross section through a region of an integrated circuit 1 according to the invention at the time of its completion.
  • the integrated circuit 1 has a semiconductor substrate 2 with this view, not shown, of electrically active areas which can be accessed via a connection contact 3.
  • the connection contact 3 is made of a copper alloy.
  • a passivation layer 4 made of a polymer is applied to the top of the semiconductor substrate 2.
  • the passivation layer 4 covers the semiconductor substrate 2 as well as the connection contact 3, wherein in the area of the top of the 3 is a circuit terminal Passivi mecanics Mrs merit 5 is recessed, by which the top side of the terminal fitting 3 is access ⁇ Lich.
  • a solder layer 6 made of a Zmn alloy is applied, which has a thickness of approximately 2 ⁇ m.
  • connection end 8 placed on the solder layer 6, the connection end 8 on its side facing away from the solder layer 6 from a
  • Heating stamp 9 is applied.
  • the state shown in FIG. 1 relates to a point in time shortly before the solder layer 6 melts.
  • the procedure for completing the integrated circuit 1 is as follows.
  • the integrated circuit 1 with the semiconductor substrate 2 and the passivation layer 4 provided on the semiconductor substrate 2 is provided.
  • the passivation layer 4 in the area of the connection contact 3 is passivated the passivation layer window 5.
  • This step is also used for wire bonding and is carried out on the wave level with photolithography and dry erase technology.
  • An approximately 2 ⁇ m thick tin solder layer is then deposited on the connection contact 3 within the passivation layer window 5. This is advantageously done by electroless precipitation, in which the solder layer selectively only grows on the Cu surface of the connection contact 3 in the region of the open passivation layer window 5.
  • the electroless tin plating is a cold process, so that the Z n layer does not react with the material of the contact 3 during its deposition.
  • the connecting wire 7 consisting of gold or copper is then bonded onto the tinned connection contact 3 using conventional bonding machines. Here occurs at the Heating by the heating die 9 no welding of the surfaces of lead wire 7 and connection contact 3, but rather the lead wire 7 is connected to the terminal contact ⁇ 3 heartverlotet.
  • Figure 2 shows a cross section through a portion of a further integrated circuit 15, the m match its essential ingredients with the integrated circuit 1 via ⁇ .
  • the same components are therefore provided with the same reference numbers.
  • the integrated circuit 15 has a flat connecting strip 16 which has a metal strip 17 on its upper side and a solder layer 18 on its underside. In this case, it is no longer necessary to provide a separate solder layer on the connection contact 3 in order to connect the connection strip 16 to the connection contact 3.
  • the procedure is essentially the same as for the integrated circuit 1, the metal strip 17 first being provided with a solder layer 18 on its underside.
  • Wires with a round cross section can also be used as connecting wires, which are provided with a solder layer 18 on their outside. If a flat strip is used, as is represented by the connecting strip 16, it is sufficient to provide only the underside of the connecting strip 16 with a solder layer 18.
  • the coating can be carried out by dip-tinning, for example in that the metal strip 17, for example made of gold, passes through a bonding machine in a tinning bath before threading. Laminating or plating a thin layer of solder is also possible with bond tapes.
  • solder alloys with a low melting point can also be used, such as an Sn / In eutectic with a melting point of approximately 180 ° C.
  • SOLID soldering process comes into play, according to which the melting point of the connection resulting from the Zmn / indium and the copper is substantially higher than the temperature at which the heating stamp 9 acts on the solder layer 18. This has the advantage that the bonding can take place at a relatively low temperature, the temperature resistance of the bond point being considerably higher than is the case with conventional solder connections.
  • FIG. 3 shows an area of a further integrated circuit 25 in cross section.
  • the connecting end of the connecting wire 26 is heated in such a way that a liquid molten bead is formed there.
  • the wire section 27 With the wire section 27, the molten pearl 28 is placed on the solder layer 6 while it is still hot, whereupon a chemical reaction between the metallic material of the molten pearl 28 and the solder layer 6 takes place in a 6 m pitch.

Abstract

An integrated circuit (1) with a semiconductor substrate (2) comprises electrically active zones to which an electric voltage can be applied via contacts (3). The contacts (3) comprise a contact layer made of copper. The invention provides for each contact (3) to present a connecting wire (7), as well as for a solder layer (6) consisting substantially of a solder-metal compound to be located in an area between the connecting wire (7) and the contact (3).

Description

Beschreibungdescription
Verfahren zum Verbinden eines Anschlußdrahtes mit einem An¬ schlußkontakt eines integrierten SchaltkreisesA method for connecting a lead wire with an on ¬-circuit terminal of an integrated circuit
Die Erfindung betrifft ein Verfahren zum Verbinden eines Anschlußendes eines Anschlußdrahtes mit einem Anschlußkontakt eines elektrisch aktiven Bereichs eines integrierten Schaltkreises. Die Erfindung betrifft weiterhin einen integrierten Schaltkreis, der einen Anschlußkontakt und einen am Anschluß- kontakt vorgesehenen Anschlußdraht aufweist.The invention relates to a method for connecting a connection end of a connecting wire to a connection contact of an electrically active region of an integrated circuit. The invention further relates to an integrated circuit which has a connection contact and a connection wire provided on the connection contact.
Bei den bekannten integrierten Schaltkreisen wird die Kontak- tierung der Anschlußkontakte mittels Drahtbonden durchge- fuhrt. Auf einem Halbleitersubstrat des integrierten Schaltkreises sind dazu als Bondflachen ausgebildete Anschlußkontakte vorgesehen, deren Oberflache Aluminium aufweist, insbesondere die Metallegierung AlSiCu. Auf dieser Oberflache kann man direkt Golddrahte anschweißen, die auf der anderen Seite an Gehausepms eines Leadframes befestigt werden.In the known integrated circuits, the connection contacts are made by means of wire bonding. For this purpose, on a semiconductor substrate of the integrated circuit, connection contacts designed as bond surfaces are provided, the surface of which has aluminum, in particular the metal alloy AlSiCu. Gold wires can be welded directly onto this surface, which are attached to the housing side of a leadframe on the other side.
Bei integrierten Schaltkreisen, die im Bereich ihrer Anschlußkontakte eine Cu-Metallisierung aufweisen, wird vor dem Kontaktieren eine zusatzliche Al-Metallschicht aufgebracht, um das Drahtbondverfahren anwenden zu können. Dazu werden zusätzliche Haft- und Barrierenschichten vorgesehen und außerdem ist eine Strukturierung mit einer Phototechnik und mit anschließendem Atzen notwendig.In the case of integrated circuits which have a Cu metallization in the area of their connection contacts, an additional Al metal layer is applied before contacting, in order to be able to use the wire bonding process. Additional adhesive and barrier layers are provided for this, and structuring with a photo technique and subsequent etching is also necessary.
Es ist Aufgabe der Erfindung, einen integrierten Schaltkreis bereitzustellen, der im Bereich seiner Anschlußkontakte Metalle bzw. Metallegierungen aufweist, die von Aluminium verschieden sind, wobei sich der bereitzustellende integrierte Schaltkreis durch eine einfache Kontaktierung auszeichnet. Es ist weiterhin Aufgabe der Erfindung, ein Verfahren bereitzustellen, das eine einfache Kontaktierung der gattungsgemaßen integrierten Schaltkreise ermöglicht. Diese Aufgabe wird gemäß αer Erfindung durch den Gegenstand der unabhängigen Ansprüche gelost. Vorteilhafte Ausgestaltun¬ gen ergeben sich aus den jeweiligen Unteranspruchen.It is an object of the invention to provide an integrated circuit which has metals or metal alloys in the area of its connection contacts which are different from aluminum, the integrated circuit to be provided being distinguished by simple contacting. It is a further object of the invention to provide a method which enables simple contacting of the generic integrated circuits. This object is achieved according to the invention by the subject matter of the independent claims. ¬ gen Advantageous Ausgestaltun result from the respective dependent claims.
Das erfmdungsgemaße Verfahren zum Verbinden eines Anschlu߬ endes eines Anschlußdrahts mit einem Anschlußkontakt eines elektrischen aktiven Bereichs eines integrierten Schaltkreises weist dabei die folgenden Schritte auf:The erfmdungsgemaße method for connecting a terminal ¬ end of a lead wire to a terminal contact of an electrical active region of an integrated circuit in this case has the following steps:
- Vorsehen einer dünnen Lotschicht im Bereich der Oberflache des Anschlußkontakts und/oder im Bereich des Anschlußendes des Anschlußdrahtes,Provision of a thin solder layer in the area of the surface of the connection contact and / or in the area of the connection end of the connection wire,
Zusammenbringen des Anschlußendes des Anschlußdrahtes und der Oberflache des Anschlußkontakts und - Erwarmen des Anschlußendes und des Anschlußkontakts.Bringing together the connecting end of the connecting wire and the surface of the connecting contact and - heating the connecting end and the connecting contact.
Die Erfindung beruht auf dem Grundgedanken, eine sehr dünne Lotschicht vorzusehen, die insbesondere Zinn oder Indium aufweist. Das Zinn geht mit angrenzendem Kupfer aus dem Bereich des Anschlußkontakts eine Kupfer-3-Zmnverbmdung ein, sobald der Bereich des -Anschlußendes des Anschlußdrahtes und der Oberflache des Anschlußkontakts erwärmt wird. Dabei erfolgt die Erwärmung vorzugsweise bei einer Temperatur, die unterhalb der Schmelztemperatur der Kupfer-3-Zmnverbmdung liegt. Die Kupfer-3-Zmnverbmdung, die die Verbindung zwischen Anschlußdraht und dem Anschlußkontakt herstellt, entsteht dabei aus einem diffussionsgesteuerten Prozeß. Für eine schnelle Verfahrensfuhrung wird die Lotschicht smnvollerweise so dünn ausgestaltet, daß deren Dicke unter 10 μm liegt. Dann schmilzt beim Erwarmen des Bereichs des Anschlußendes des Anschlußdrahtes und der Oberflache des Anschlußkontakts das Lotmaterial auf, wobei aus den angrenzenden Bereichen des Anschlußkontaktes Kupfer gelost wird, das m das Lotmaterial hmemdiffundiert . Dort reagiert das Kupfer mit dem vorhande- nen Zinn und bildet das Kupfer-3-Zmn, also eine Art Bronze. Vorzugsweise wird die Lotschicht dunner als 5 um gehalten, wobei auch Starken bis unter einem Micrometer (z.B. 200 nm) denkbar sind. Dadurch wird die Auswirkung des Effekts vermie¬ den, gemäß dem sich bei der ersten Bildung einer Kupfer-3- Zinn-Phase diese an das Kupfer des Anschlußkontaktes anlagert und als Diffussionssperre wirkt. Bei dickeren Lotschichten wirkt diese Diffussionssperre der weiteren Bildung von Kup- fer-3-Zmn-Phase entgegen.The invention is based on the basic idea of providing a very thin solder layer, which in particular has tin or indium. The tin forms a copper 3-tin connection with adjacent copper from the area of the connection contact as soon as the area of the connection end of the connection wire and the surface of the connection contact is heated. The heating is preferably carried out at a temperature which is below the melting temperature of the copper 3-Zmnverbmdung. The copper 3-Zmnverbmdung, which creates the connection between the lead wire and the terminal contact, arises from a diffusion-controlled process. For a quick procedure, the solder layer is designed so thin that its thickness is less than 10 μm. Then, when the area of the connection end of the connecting wire and the surface of the connection contact are heated, the solder material melts, copper being loosened from the adjacent areas of the connection contact, which diffuses the solder material. There the copper reacts with the existing tin and forms the copper-3-tin, a kind of bronze. The solder layer is preferably kept thinner than 5 .mu.m, although thicknesses of less than a micrometer (for example 200 nm) are also conceivable. Thereby, the impact of the effect is vermie ¬, according to which in the first formation of a copper-tin-3- phase, this attaches to the copper of the pad and acts as a diffusion barrier. In the case of thicker solder layers, this diffusion barrier counteracts the further formation of copper-3-Zmn phase.
Anders als im Stand der Technik braucht der Chip nicht mehr als Ganzes auf eine Temperatur von einigen hundert Grad Celsius erwärmt zu werden, was bei Anschlußkontakten aus Kupfer zu einer unerwünschten Oxidation fuhrt.In contrast to the prior art, the chip as a whole no longer needs to be heated to a temperature of a few hundred degrees Celsius, which leads to undesired oxidation in the case of copper contacts.
Für den Fall, daß dickere Lotschichten vorgesehen werden, kann auch m einem ersten Schritt eine Kupfer-6-Zmn-5-Phase ausgebildet werden, bis zwischen dem Anschlußkontakt und Anschlußdraht eine Verbindung mit einer vorgegebenen Grundfestigkeit erhalten wird. In einem spateren Schritt lagert man den gesamten integrierten Schaltkreis so, daß sich die endgültige stabile Kupfer-3-Zmn-Phase im wesentlichen vollständig m der Lotschicht ausbildet. Vorzugsweise wird der Dif- fussionsprozeß dabei hinsichtlich der Temperatur so gefahren, daß die Temperatur über dem Schmelzpunkt von Zinn bzw. von Indium liegt. Dementsprechend betragt eine bevorzugte Temperatur beim Erw rmen des Bereichs des Anschlußendes des Anschlußdrahts und/oder der Oberflache des Anschlußkontakts über 25β°C und vorzugsweise bis zu 300°C. Im Fall der Verwendung eines Zinn-Indium-Gemisches kann auch eine Temperatur von ca. 120°C bis 130°C verwendet werden.In the event that thicker solder layers are provided, a copper-6-Zmn-5 phase can also be formed in a first step until a connection with a predetermined basic strength is obtained between the connection contact and the connection wire. In a later step, the entire integrated circuit is stored in such a way that the final stable copper 3-Zmn phase is formed essentially completely in the solder layer. In terms of temperature, the diffusion process is preferably carried out in such a way that the temperature is above the melting point of tin or indium. Accordingly, a preferred temperature amounts on heating rms of the area of the terminal end of the lead wire and / or the surface of the terminal fitting 25 β ° C and preferably up to 300 ° C. If a tin-indium mixture is used, a temperature of approximately 120 ° C. to 130 ° C. can also be used.
Für den Fall, daß dickere Lotschichten vorgesehen werden, kann der Schritt des Erwärmens des Bereichs des Anschlußendes des Anschlußdrahtes und der Oberflache des Anschlußkontakts in einem ersten Teilschritt als kurzzeitige lokale Erwärmung vorgesehen sein, wobei die Erwärmung auf eine Temperatur oberhalb des Schmelzpunktes der niedrigschmelzenden Komponen- te bzw. des Lotes der Lot-Metall-Verbindung erfolgt. In einen spateren Schritt lagert man den gesamten integrierten Schalt¬ kreis - vorzugsweise unter Ausschluß von Sauerstoff - bei ei¬ ner Temperatur, bei der sich die im ersten Teilschritt erge- bende Kupfer-6-Zmn-5-Phase m eine endgültige stabile Kup- fer-3-Zmn-Phase umwandelt. Der Schritt des langzeitigen Erwärmens kann dabei sowohl bei einer Temperatur unterhalb des Schmelzpunktes der niedngschmelzenden Komponente erfolgen, als auch - für den Fall, daß im ersten Schritt noch nicht die gesamte Lot-Metall-Verbmdung umgewandelt wurde - bei höherer Temperatur. Die langzeitige Ablagerung kann auch bei erhöhter Temperatur oder m einer Sauerstoffreien Umgebung erfolgen.In the event that thicker solder layers are provided, the step of heating the area of the connection end of the connection wire and the surface of the connection contact can be provided in a first sub-step as brief local heating, the heating to a temperature above the melting point of the low-melting components te or the solder of the solder-metal connection. In a spateren step, superimposed on the overall integrated circuit ¬ circle - preferably with exclusion of oxygen - in egg ¬ ner temperature at which the first sub-step erge- Bende copper-6-Zmn-5-m, a final phase stable copper fer-3-Zmn phase. The step of long-term heating can take place both at a temperature below the melting point of the low-melting component and - in the event that the entire solder-metal compound has not yet been converted in the first step - at a higher temperature. Long-term deposition can also take place at elevated temperature or in an oxygen-free environment.
Weiterhin kann gemäß der Erfindung ber einen Preßstempel ei- ne haltende Druckkraft auf den im Bereich des Anschlußkontakts vorgesehenen Anschlußdraht ausgeübt werden.Furthermore, according to the invention, a holding pressure force can be exerted on the connecting wire provided in the area of the connecting contact by means of a press ram.
Das erfmdungsgemaße Verfahren kann auch unter einer nicht- oxidierenden Atmosphäre beispielsweise mit Argon oder Stick- stoff durchgeführt werden, wobei der integrierte Schaltkreis anschließend m ein Gehäuse oder m eine Vergußmasse eingepackt werden kann.The method according to the invention can also be carried out under a non-oxidizing atmosphere, for example with argon or nitrogen, in which case the integrated circuit can subsequently be packed in a housing or in a casting compound.
Mit dem erfmdungsgemaßen Verfahren wird anders als bei einem Weichlotverfahren, bei dem ein Anschlußdraht an einem Anschlußkontakt mit Lot befestigt wird, das Lot nicht über seinen Schmelzpunkt erhitzt und anschließend abgekühlt, bis es erstarrt ist und dann die Verbindung zwischen Anschlußkontakt und Anschlußdraht bildet. Vielmehr wird das Lot über seinen Schmelzpunkt erhitzt und auf dieser Temperatur gehalten, bis sich die Lotschicht aufgrund einer chemischen Reaktion mit dem Material des Anschlußkontakts und/oder mit dem Material des Anschlußdrahts verfestigt. Dabei bilden sich intermetallische Phasen wie beispielsweise Kupfer-3-Zmn. Die Erfindung laßt sich auch mit Lotschichten verwirklichen, m denen Metalle wie Indium, Gallium, Quecksilber, Blei usw. vorgesehen sind.With the method according to the invention, unlike a soft soldering method in which a connecting wire is attached to a connecting contact with solder, the solder is not heated above its melting point and then cooled until it solidifies and then forms the connection between the connecting contact and the connecting wire. Rather, the solder is heated above its melting point and held at this temperature until the solder layer solidifies due to a chemical reaction with the material of the connection contact and / or with the material of the connection wire. Intermetallic phases such as copper-3-Zmn are formed. The invention can also be implemented with solder layers in which metals such as indium, gallium, mercury, lead, etc. are provided.
Das erfmdungsgemaße Lotverfahren wird auch als "Verfahren der isothermen Erstarrung" bzw. "SOLID-Prozeß" Gezeichnet . Vorteilhafterwelse laßt sich damit das billige und erprobte Drahtbondverfahren auch für Cu-Metallisierungen auf Halblei- tersubstraten nutzen. Die bisher benutzten Maschinen sind weiterhin verwendbar. Dabei müssen lediglich die Bonddrahte bzw. die Anschlußkontakte mit einer niedrigschmelzenden Lot¬ schicht wie beispielsweise Sn oder mit einer Sn/In-legierung beschichtet werden. Mit dem erfmdungsgemaßen Verfahren lassen sich Drahte aus Materialien verarbeiten, die sich für den SOLID-Prozeß eignen, wie beispielsweise aus Kupfer, Gold,The soldering process according to the invention is also referred to as the "process of isothermal solidification" or "SOLID process". The cheap and tried-and-tested wire bonding process can therefore also be used advantageously for copper metallization on semiconductor substrates. The machines previously used can still be used. In this case, only need the bonding wires and the terminal contacts with a low melting solder such as Sn ¬ layer or be coated with a Sn / In alloy. With the method according to the invention, wires can be processed from materials that are suitable for the SOLID process, such as from copper, gold,
Silber, Nickel und weitere Legierungen beispielsweise aus den vorstehend genannten Metallen und anderen Metallen. Für Bonddrahte aus anderen Metallen wie beispielsweise aus Aluminiunm kann auch eine Beschichtung mit geeigneten Haftschichten auf dem Bonddraht bzw. auf dem Anschlußkontakt vorgesehen werden. Geeignete Haftschichten für Aluminiumdrahte sind beispielsweise Titan, Titannitrid und Kupfer, jeweils vorzugsweise 50 nm. Als letzte Schicht wird vorzugsweise das Lotmetall aufgebracht .Silver, nickel and other alloys, for example, from the metals mentioned above and other metals. For bonding wires made of other metals, such as aluminum, for example, a coating with suitable adhesive layers can be provided on the bonding wire or on the connection contact. Suitable adhesive layers for aluminum wires are, for example, titanium, titanium nitride and copper, each preferably 50 nm. The solder layer is preferably applied as the last layer.
Der Anschlußdraht kann die Form eines flachen Bandes aufweisen, wobei an einem mit einem Anschlußkontakt m Verbindung stehenden Ende eine perlenformige Verdickung ausgebildet sein kann, was sich bei einem Anschußdraht mit kreisförmigem Quer- schnitt anbietet.The connecting wire can have the shape of a flat strip, a bead-shaped thickening being formed at one end connected to a connecting contact, which is appropriate for a connecting wire with a circular cross-section.
Bei dem erfmdungsgemaßen Verfahren kann der Schritt des Vorsehens einer dünnen Lotschicht auch mit Hilfe eines stromlosen Abscheidens von Lotmaterial erfolgen. Alternativ dazu kann Lotmaterial auch mit einem Tauchverfahren oder mit Auflamelieren bzw. Aufplattieren erfolgen. Bei dem erfmdungsgemaßen Verfanren ist dabei eine Ausgestal¬ tung hervorzuheben, bei der vor dem Schritt des Zusammenbrm- gens des Anschlußendes des Anschlußdrahts mit der Oberflache des Anschlußkontakts der Schritt des Aufschmelzens des An¬ schlußendes zu einer Schmelzperle vorgesehen ist. In diesem Fall wird die noch heiße Schmelzperle mit dem Anschlußkontakt Verbindung gebracht. Die der Schmelzperle gespeicherte Wärmeenergie bewirkt dabei den Diffussionsprozeß des Metalls aus dem Anschlußdraht m die Lotschicht.In the method according to the invention, the step of providing a thin solder layer can also be carried out with the aid of electroless deposition of solder material. As an alternative to this, solder material can also be made with a dipping process or with laminating or plating. In the inventive shaped Verfanren doing a Ausgestal ¬ be emphasized tung, gens of the terminal end of the lead wire with the surface of the terminal fitting is provided the step of melting of at ¬ circuit forming a bead of melted in before the step of Zusammenbrm-. In this case, the hot melt bead is connected to the connection contact. The thermal energy stored in the molten pearl causes the diffusion process of the metal from the connecting wire m the solder layer.
Die Erfindung ist m der Zeichnung anhand von drei Ausfuh- rungsbeispielen naher veranschaulicht.The invention is illustrated in more detail in the drawing with the aid of three exemplary embodiments.
Figur 1 zeigt einen Querschnitt durch einen ersten uite- gπerten Schaltkreis zu einem Zeitpunkt seiner Fertigstellung,FIG. 1 shows a cross section through a first integrated circuit at the time of its completion,
Figur 2 zeigt einen Querschnitt durch einen zweiten integrierten Schaltkreis zu einem Zeitpunkt seiner Fer- tigstellung undFIG. 2 shows a cross section through a second integrated circuit at the time of its completion and
Figur 3 zeigt einen Querschnitt durch einen dritten erfin- dungsgemaßen integrierten Schaltkreis zu dem Zeitpunkt seiner Fertigstellung.FIG. 3 shows a cross section through a third integrated circuit according to the invention at the time of its completion.
Figur 1 zeigt einen Querschnitt durch einen Bereich eines er- f dungsgemaßen integrierten Schaltkreises 1 zu einem Zeitpunkt seiner Fertigstellung. Der integrierte Schaltkreis 1 weist ein Halbleitersubstrat 2 mit dieser Ansicht nicht gezeigten elektrisch aktiven Bereichen auf, auf die über einen Anschlußkontakt 3 zugegriffen werden kann. Der Anschlußkontakt 3 ist dabei aus einer Kupferlegierung hergestellt.FIG. 1 shows a cross section through a region of an integrated circuit 1 according to the invention at the time of its completion. The integrated circuit 1 has a semiconductor substrate 2 with this view, not shown, of electrically active areas which can be accessed via a connection contact 3. The connection contact 3 is made of a copper alloy.
Auf der Oberseite des Halbleitersubstrats 2 ist eine Passi- vierungsschicht 4 aus einem Polymer aufgebracht. Die Passi- vierungsschicht 4 überdeckt das Halbleitersubstrat 2 sowie den Anschlußkontakt 3, wobei im Bereich der Oberseite des An- schlußkontakts 3 ein Passivierungsschichtfenster 5 ausgespart ist, durch das die Oberseite des Anschlußkontakts 3 zugang¬ lich ist. Im Bereich des Passivierungsschichtfensters 5 ist eine Lotschicht 6 aus einer Zmn-Legierung aufgebracht, die eine Starke von ca. 2 um aufweist.A passivation layer 4 made of a polymer is applied to the top of the semiconductor substrate 2. The passivation layer 4 covers the semiconductor substrate 2 as well as the connection contact 3, wherein in the area of the top of the 3 is a circuit terminal Passivierungsschichtfenster 5 is recessed, by which the top side of the terminal fitting 3 is access ¬ Lich. In the area of the passivation layer window 5, a solder layer 6 made of a Zmn alloy is applied, which has a thickness of approximately 2 μm.
In der Figur 1 gezeigten Darstellung ist ein AnschlußdrahtIn the illustration shown in Figure 1 is a lead wire
7 aus einer Gold- oder Kupferlegierung über ein Anschlußende7 made of a gold or copper alloy via one connection end
8 auf der Lotschicht 6 aufgesetzt, wobei das Anschlußende 8 auf seiner von der Lotschicht 6 abgewandten Seite von einem8 placed on the solder layer 6, the connection end 8 on its side facing away from the solder layer 6 from a
Heizstempel 9 haltend beaufschlagt wird.Heating stamp 9 is applied.
Der m Figur 1 gezeigte Zustand betrifft einen Zeitpunkt kurz vor dem Aufschmelzen der Lotschicht 6.The state shown in FIG. 1 relates to a point in time shortly before the solder layer 6 melts.
Zur Fertigstellung des integrierten Schaltkreises 1 wird folgendermaßen vorgegangen.The procedure for completing the integrated circuit 1 is as follows.
Zunächst wird der integrierte Schaltkreis 1 mit dem Halblei- tersubstrat 2 und der auf dem Halbleitersubstrat 2 vorgesehenen Passivierungsschicht 4 bereitgestellt. Danach wird m die Passivierungsschicht 4 im Bereich des Anschlußkontakts 3 das Passivierungsschichtfenster 5 geatzt. Dieser Schritt wird auch beim Drahtbonden angewandt und wird auf dem Waverlevel mit Photolithographie und Trockenatztechnik ausgeführt. Anschließend wird innerhalb des Passivierungsschichtfenster 5 auf dem Anschlußkontakt 3 eine ca. 2 μm dicke Lotschicht aus Zinn abgeschieden. Dies geschieht vorteilhafterweise durch stromlose Ausscheidung, bei dem die Lotschicht selektiv nur auf der Cu-Oberflache des Anschlußkontakts 3 im Bereich des geöffneten Passivierungsschichtfensters 5 aufwachst. Dabei ist besonders von Vorteil, daß die stromlose Verzinnung ein kaltes Verfahren ist, so daß die Z n-Schicht nicht schon wahrend ihrer Abscheidung mit dem Material des Anschlußkon- takts 3 reagiert. Auf dem so verzinnten Anschlußkontakt 3 wird dann mit üblichen Bondmaschinen der aus Gold oder Kupfer bestehende Anschlußdraht 7 aufgebondet. Dabei tritt bei der Erwärmung durch den Heizstempel 9 keine Verschweißung der Oberflachen von Anschlußdraht 7 und Anschlußkontakt 3 auf, sondern vielmehr wird der Anschlußdraht 7 mit dem Anschlu߬ kontakt 3 hartverlotet .First of all, the integrated circuit 1 with the semiconductor substrate 2 and the passivation layer 4 provided on the semiconductor substrate 2 is provided. Then the passivation layer 4 in the area of the connection contact 3 is passivated the passivation layer window 5. This step is also used for wire bonding and is carried out on the wave level with photolithography and dry erase technology. An approximately 2 μm thick tin solder layer is then deposited on the connection contact 3 within the passivation layer window 5. This is advantageously done by electroless precipitation, in which the solder layer selectively only grows on the Cu surface of the connection contact 3 in the region of the open passivation layer window 5. It is particularly advantageous that the electroless tin plating is a cold process, so that the Z n layer does not react with the material of the contact 3 during its deposition. The connecting wire 7 consisting of gold or copper is then bonded onto the tinned connection contact 3 using conventional bonding machines. Here occurs at the Heating by the heating die 9 no welding of the surfaces of lead wire 7 and connection contact 3, but rather the lead wire 7 is connected to the terminal contact ¬ 3 hartverlotet.
Figur 2 zeigt einen Querschnitt durch einen Bereich eines weiteren integrierten Schaltkreises 15, der m seinen wesentlichen Bestandteilen mit dem integrierten Schaltkreis 1 über¬ einstimmt. Die selben Bestandteile sind daher mit den glei- chen Bezugsziffern versehen.Figure 2 shows a cross section through a portion of a further integrated circuit 15, the m match its essential ingredients with the integrated circuit 1 via ¬. The same components are therefore provided with the same reference numbers.
Im Unterschied zum integrierten Schaltkreis 1 ist beim integrierten Schaltkreis 15 e flaches Anschlußband 16 vorgesehen, das auf seiner Oberseite e Metallband 17 und auf sei- ner Unterseite eine Lotschicht 18 aufweist. In diesem Fall ist es nicht mehr notwendig, eine gesonderte Lotschicht auf dem Anschlußkontakt 3 vorzusehen, um das Anschlußband 16 mit dem Anschlußkontakt 3 zu verbinden.In contrast to the integrated circuit 1, the integrated circuit 15 has a flat connecting strip 16 which has a metal strip 17 on its upper side and a solder layer 18 on its underside. In this case, it is no longer necessary to provide a separate solder layer on the connection contact 3 in order to connect the connection strip 16 to the connection contact 3.
Zur Fertigstellung des integrierten Schaltkreises 15 wird dabei im wesentlichen wie beim integrierten Schaltkreis 1 vorgegangen, wobei zunächst das Metallband 17 auf seiner Unterseite mit einer Lotschicht 18 versehen wird. Es können auch Drahte mit rundem Querschnitt als Anschlußdrahte verwendet werden, die auf ihrer Außenseite mit einer Lotschicht 18 versehen sind. Wenn em flaches Band verwendet wird, wie es das Anschlußband 16 darstellt, genügt es, nur die Unterseite des Anschlußbands 16 mit einer Lotschicht 18 zu versehen. Die Beschichtung kann durch Tauchverzinnen erfolgen, beispielsweise indem das Metallband 17 beispielsweise aus Gold vor dem Einfädeln eine Bondmaschine em Verzinnungsbad durchlauft. Bei Bondbandern ist auch das Auflamellieren bzw. Plattieren einer dünnen Lotschicht möglich. In diesem Fall können auch Lotlegierungen mit niedrigem Schmelzpunkt verwendet werden wie beispielsweise em Sn/In-Eutektikum mit einem Schmelzpunkt von ca. 180°C. Bei dieser Ausgestaltung kommt der Vorteil des SOLID-Lotprozeßes zum tragen, gemäß dem der Schmelz- punkt der sich aus dem Zmn/Indium und dem Kupfer ergebenden Verbindung wesentlich hoher liegt als die Temperatur, mit der der Heizstempel 9 auf die Lotschicht 18 einwirkt. Daraus ergibt sich der Vorteil, daß die Bondung bei relativ niedriger Temperatur erfolgen kann, wobei die Temperaturbelastbarkeit der Bondstelle wesentlich hoher ist als dies bei konventionellen Lotverbindungen der Fall ist.To complete the integrated circuit 15, the procedure is essentially the same as for the integrated circuit 1, the metal strip 17 first being provided with a solder layer 18 on its underside. Wires with a round cross section can also be used as connecting wires, which are provided with a solder layer 18 on their outside. If a flat strip is used, as is represented by the connecting strip 16, it is sufficient to provide only the underside of the connecting strip 16 with a solder layer 18. The coating can be carried out by dip-tinning, for example in that the metal strip 17, for example made of gold, passes through a bonding machine in a tinning bath before threading. Laminating or plating a thin layer of solder is also possible with bond tapes. In this case, solder alloys with a low melting point can also be used, such as an Sn / In eutectic with a melting point of approximately 180 ° C. With this configuration, the advantage of the SOLID soldering process comes into play, according to which the melting point of the connection resulting from the Zmn / indium and the copper is substantially higher than the temperature at which the heating stamp 9 acts on the solder layer 18. This has the advantage that the bonding can take place at a relatively low temperature, the temperature resistance of the bond point being considerably higher than is the case with conventional solder connections.
Figur 3 zeigt einen Bereich eines weiteren integrierten Schaltkreises 25 im Querschnitt. Der integrierte SchaltkreisFIG. 3 shows an area of a further integrated circuit 25 in cross section. The integrated circuit
25 entspricht m wesentlichen Teilen demjenigen aus Figur 1. Gleiche Teile sind daher mit den selben Bezugsziffern versehen.25 corresponds in essential parts to that from FIG. 1. Identical parts are therefore provided with the same reference numbers.
Im Unterschied zum integrierten Schaltkreis 1 aus Figur 1 ist am integrierten Schaltkreis 25 aus Figur 3 em AnschlußdrahtIn contrast to the integrated circuit 1 from FIG. 1, there is an connecting wire on the integrated circuit 25 from FIG
26 vorgesehen, der sich m einen Drahtabschnitt 27 mit im wesentlichen kreisrundem Querschnitt und eine Schmelzperle 28 gliedert. Bei der Fertigstellung des integrierten Schalt- kreises 25 wird dabei e Anschlußende des Anschlußdrahts 26 so erhitzt, daß sich dort eine flussige Schmelzperle ausbildet. Mit dem Drahtabschnitt 27 wird die Schmelzperle 28 noch m heißem Zustand auf die Lotschicht 6 aufgesetzt, worauf sich eine chemische Reaktion zwischen dem metallischen Mate- rial der Schmelzperle 28 und der Lotschicht 6 m Gang setzt. 26 is provided, which is divided into a wire section 27 with a substantially circular cross section and a fusible bead 28. When the integrated circuit 25 is completed, the connecting end of the connecting wire 26 is heated in such a way that a liquid molten bead is formed there. With the wire section 27, the molten pearl 28 is placed on the solder layer 6 while it is still hot, whereupon a chemical reaction between the metallic material of the molten pearl 28 and the solder layer 6 takes place in a 6 m pitch.

Claims

Patentansprüche claims
1. Integrierter Schaltkreis (1; 15; 25) mit einem Halbleitersubstrat (2), das elektrisch aktive Bereiche aufweist, auf die über Anschlußkontakte (3) zugegriffen werden kann, wobei die Anschlußkontakte (3) wenigstens eine an der Oberflache angeordnete im wesentlichen Kupfer aufweisende Anschlußschicht aufweisen, wobei an jedem Anschlußkontakt (3) em Anschlußdraht (7; 16; 26) vorgesehen ist und wobei ferner m einem Bereich zwischen Anschlußdraht (7; 16; 26) und Anschlußkontakt (3) eine dünne LotSchicht (6; 16) vorgesehen ist, die im wesentlichen aus einer Lot-Metall-Verbmdung besteht.1. Integrated circuit (1; 15; 25) with a semiconductor substrate (2) which has electrically active areas which can be accessed via connection contacts (3), the connection contacts (3) having at least one essentially copper arranged on the surface Having a connection layer, wherein a connection wire (7; 16; 26) is provided on each connection contact (3) and furthermore a thin solder layer (6; 16) in an area between the connection wire (7; 16; 26) and connection contact (3) is provided, which consists essentially of a solder metal connection.
2. Integrierter Schaltkreis (1; 15; 25) nach Anspruch 1, dadurch gekennzeichnet, daß die Lot-Metall-Verbmdung CuSn aufweist.2. Integrated circuit (1; 15; 25) according to claim 1, characterized in that the solder-metal connection has CuSn.
3. Integrierter Schaltkreis (1; 15; 25) nach Anspruch 1 oder Anspruch 2, dadurch gekennzeichnet, daß die Lotschicht (6; 16) eine Dicke von weniger als 20μm aufweist .3. Integrated circuit (1; 15; 25) according to claim 1 or claim 2, characterized in that the solder layer (6; 16) has a thickness of less than 20 microns.
4. Integrierter Schaltkreis (1; 15; 25) nach Anspruch 3, dadurch gekennzeichnet, daß die Lotschicht (6; 16) eine Dicke von weniger als lOμm aufweist .4. Integrated circuit (1; 15; 25) according to claim 3, characterized in that the solder layer (6; 16) has a thickness of less than 10 microns.
5. Integrierter Schaltkreis (1; 15; 25) nach Anspruch 4, dadurch gekennzeichnet, daß die Lotschicht (6; 16) eine Dicke von weniger als 2μm aufweist .5. Integrated circuit (1; 15; 25) according to claim 4, characterized in that the solder layer (6; 16) has a thickness of less than 2 microns.
6. Integrierter Schaltkreis (15) nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, daß der Anschlußdraht (16) die Form eines flachen Bands aufweist .6. Integrated circuit (15) according to one of the preceding claims, characterized in that the connecting wire (16) has the shape of a flat band.
7. Integrierter Schaltkreis (25) nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, daß der Anschlußdraht (28) an seinem mit einem Anschlußkon¬ takt (3) in Verbindung stehendem Ende eine perlenförmige Verdickung (28) aufweist.7. An integrated circuit (25) as claimed in any one of the preceding claims characterized in that the connecting wire (28) at its clock with a Anschlußkon ¬ (3) standing in connection end a bead-shaped thickening (28).
8. Verfahren zum Verbinden eines Anschlußendes (8) eines Anschlußdrahts (7; 16; 26) mit einem Anschlußkontakt (3) eines elektrisch aktiven Bereichs eines integrierten Schaltkreises (1; 15; 25), wobei der Anschlußkontakt (3) wenigstens eine an seiner Oberfläche angeordnete, im wesentlichen Kupfer aufweisende Anschlußschicht aufweist, wobei das Verfahren die folgenden Schritte aufweist: Vorsehen einer dünnen Lotschicht (6; 18) im Bereich der Oberfläche des Anschlußkontakts (3) und/oder im Bereich des Anschlußendes des Anschlußdrahtes (16) , Zusammenbringen des .Anschlußendes (8) des Anschlußdrahtes (7; 16; 26) und der Oberfläche des Anschlußkontakts (3) und Erwärmen des Bereichs des Anschlußendes (8) des An- schlußdrahtes (7; 16; 26) und der Oberfläche des Anschlußkontakts (3) derart, daß in wenigstens einem Bereich zwischen Anschlußende (8) und Anschlußkontakt (3) im wesentlichen vollständig eine Lot-Metall- Verbindung ausgebildet ist.8. A method for connecting a connecting end (8) of a connecting wire (7; 16; 26) to a connecting contact (3) of an electrically active region of an integrated circuit (1; 15; 25), the connecting contact (3) having at least one on it Surface-arranged, essentially copper-containing connection layer, the method comprising the following steps: providing a thin solder layer (6; 18) in the area of the surface of the connection contact (3) and / or in the area of the connection end of the connection wire (16), bringing it together the connecting end (8) of the connecting wire (7; 16; 26) and the surface of the connecting contact (3) and heating the area of the connecting end (8) of the connecting wire (7; 16; 26) and the surface of the connecting contact (3 ) such that a solder-metal connection is essentially completely formed in at least one area between the connection end (8) and the connection contact (3).
9. Verfahren nach Anspruch 8, dadurch gekennzeichnet, daß der Schritt des Zusammenpressens des Anschlußendes (8) des Anschlußdrahtes (7; 16; 26) und der Oberfläche des Anschlußkontakts (3) vorgesehen ist.9. The method according to claim 8, characterized in that the step of compressing the connecting end (8) of the connecting wire (7; 16; 26) and the surface of the connecting contact (3) is provided.
10. Verfahren nach Anspruch 8 oder Anspruch 9, dadurch gekennzeicnnet, daß der Schritt des Vorsehens einer dünnen Lotschicht (6; 18) im Bereich der Oberflache des Anschlußkontakts (3) und/oder im Bereich des Anschlußendes (8) des Anschluß- drahtes (7; 16; 26) den Schritt des stromlosen Ausschei¬ dens von Lotmaterial aufweist.10. The method according to claim 8 or claim 9, characterized in that the step of providing a thin solder layer (6; 18) in the area of the surface of the connection contact (3) and / or in the area of the connection end (8) of the connection wire (7; 16; 26) includes the step of de-energizing Ausschei ¬ dens solder material.
11. Verfahren nach Anspruch 8 oder Anspruch 9, dadurch gekennzeichnet, daß der Schritt des Vorsehens einer dünnen Lotschicht im Bereich der Oberflache des Anschlußkontakts und/oder im Bereich des Anschlußendes des Anschlußdrahtes den Schritt des Aufbrmgens von Lotmaterial mit einem Tauchverfahren aufweist .11. The method according to claim 8 or claim 9, characterized in that the step of providing a thin solder layer in the area of the surface of the connection contact and / or in the region of the connection end of the connecting wire comprises the step of applying solder material with an immersion method.
12. Verfahren nach Anspruch 8 oder Anspruch 9, dadurch gekennzeichnet, daß der Schritt des Vorsehens einer dünnen Lotschicht im Bereich der Oberflache des Anschlußkontakts und/oder im Be- reich des Anschlußendes des Anschlußdrahtes den Schritt des Auflamellierens bzw. Plattierens von Lotmaterial aufweist.12. The method according to claim 8 or claim 9, characterized in that the step of providing a thin solder layer in the area of the surface of the connection contact and / or in the area of the connection end of the connecting wire comprises the step of laminating or plating solder material.
13. Verfahren nach einem der Ansprüche 8 bis 12, dadurch gekennzeichnet, daß die Lotschicht (6; 18) Zinn und/oder Indium aufweist.13. The method according to any one of claims 8 to 12, characterized in that the solder layer (6; 18) has tin and / or indium.
14. Verfahren nach einem der Ansprüche 8 bis 13, dadurch gekennzeichnet, daß der Schritt des Vorsehens einer Lotschicht so vorgenommen wird, daß die Lotschicht (6; 16) eine Dicke von weniger als 20μm aufweist.14. The method according to any one of claims 8 to 13, characterized in that the step of providing a solder layer is carried out so that the solder layer (6; 16) has a thickness of less than 20 microns.
15. Verfahren nach Anspruch 14, dadurch gekennzeichnet, daß der Schritt des Vorsehens einer Lotschicht so vorgenommen wird, daß die Lotschicht (6; 16) eine Dicke von weniger als lOμ aufweist.15. The method according to claim 14, characterized in that the step of providing a solder layer is carried out so that the solder layer (6; 16) has a thickness of less than 10 μm.
16. Verfahren nach Anspruch 15, dadurch gekennzeichnet, daß der Schritt des Vorsehens einer Lotschicht so vorgenommen wird, daß die Lotschicht (6; 16) eine Dicke von weniger als 2μm aufweist.16. The method according to claim 15, characterized in that the step of providing a solder layer is carried out so that the solder layer (6; 16) has a thickness of less than 2 microns.
17. Verfahren nach einem der Ansprüche 8 bis 16, dadurch gekennzeichnet, daß vor dem Schritt des Zusammenbrmgens des Anschlußendes des Anschlußdrahtes (26) mit der Oberflache des Anschluß- kontakts (3) der Schritt des Aufschmelzens des Anschlußendes zu einer Schmelzperle (28) vorgesehen ist und die noch heiße Schmelzperle mit dem Anschlußkontakt Verbindung gebracht wird.17. The method according to any one of claims 8 to 16, characterized in that before the step of bringing together the connecting end of the connecting wire (26) with the surface of the connecting contact (3), the step of melting the connecting end into a fusing bead (28) is provided is and the still hot melt pearl is connected to the connection contact.
18. Verfahren nach einem der Ansprüche 8-17, dadurch gekennzeichnet, daß der Schritt des Erwärmens des Bereichs des Anschlußendes des Anschußdrahtes und der Oberflache des Anschußkontakts den Schritt des kurzzeitigen lokalen Erwärmens auf eine Tempera- tur oberhalb des Schmelzpunktes der niedrigschmelzenden Komponente der Lot-Metall-Verbmdung sowie den Schritt des langzeitigen Erwärmens des integrierten Schaltkreises aufweist. 18. The method according to any one of claims 8-17, characterized in that the step of heating the area of the connecting end of the connecting wire and the surface of the connecting contact, the step of briefly local heating to a temperature above the melting point of the low-melting component of the solder Metal compound and the step of long-term heating of the integrated circuit has.
PCT/DE2000/000907 1999-03-24 2000-03-24 Method of connecting a connecting wire to a contact of an integrated circuit WO2000057472A1 (en)

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DE19913368.9 1999-03-24

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