WO2000057456A1 - Cluster tool for wafer processing having an electron beam exposure module - Google Patents
Cluster tool for wafer processing having an electron beam exposure module Download PDFInfo
- Publication number
- WO2000057456A1 WO2000057456A1 PCT/US2000/006894 US0006894W WO0057456A1 WO 2000057456 A1 WO2000057456 A1 WO 2000057456A1 US 0006894 W US0006894 W US 0006894W WO 0057456 A1 WO0057456 A1 WO 0057456A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- module
- electron beam
- tool
- substrate
- beam radiation
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67167—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers surrounding a central transfer chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67196—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the transfer chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
- H01L21/67213—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one ion or electron beam chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
- H01L21/67225—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one lithography chamber
Definitions
- the present invention relates to a semiconductor wafer processing equipment. More particularly, the invention pertains to the processing of wafers in modular processing systems such as cluster tools. Such tools are useful for sequentially conducting semiconductor treatments in a sealed, controllable environment. Such apparatus is helpful in preventing particle contamination and the throughput of the manufacturing process is thereby significantly increased. Still more particularly, the invention pertains to cluster tools having an electron beam exposure module.
- particulate contamination is imperative for cost effective, high-yielding and profitable manufacturing of VLSI circuits. Because circuit designs increasingly require smaller and smaller lines and spaces, it is necessary to exert greater control on the presence of particles. Contamination particles cause incomplete etching in spaces between lines, thus leading to unwanted electrical bridging. In addition to physical defects, contamination particles may cause electrical failure due to induced ionization or trapping centers in gate dielectrics or junctions.
- the principal sources of particulate contamination are personnel, equipment, and chemicals. Particles given off by personnel are transmitted through the environment and through physical contact or migration onto the wafer surface.
- processing machines such as cluster tools wherein several different and randomly accessible processing stations or modules are connected to a common wafer handling or transport module. Wafers are continuously maintained in an isolated environment at a constant vacuum pressure level, and transferred into and out of an external atmospheric pressure environment through one or more access ports or load- locks.
- a cassette or carrier with a series of wafers is placed at an interface port of the cluster tool and latches release the port door.
- a manipulator robot picks up the cassette or individual wafers and directs them to desired processing stations within the equipment. After processing, the reverse operation takes place.
- Such a wafer processing technique essentially e--iminates contaminates since treatment takes place after the wafers are sealed in the internal vacuum environment, and they are not removed prior to completion of processing.
- the configuration achieves a significant improvement over the conventional handling of open cassettes inside a clean room.
- the use of cluster tools increases process productivity.
- Cluster tools for the processing of semiconductor wafers are well known in the art and are widely commercially available. Such may be exemplified by U.S. patents 5,259,881; 5,280,219; 5,730,801; 5,613,821 and 5,380,682.
- cluster tools While the use of cluster tools has significantly aided semiconductor processing throughput, certain treatments have not been known to be performable in cluster tools. While such steps as coating, heating, cooling, plasma etching, soft etching, ion implantation, and chemical vapor deposition have been done heretofore in cluster tools, electron beam exposure has not been performed in a cluster tool. As a result, when an electron beam exposure curing step is required as part of a process sequence, it has been necessary to perform it either before entry or after removal from a cluster tool arrangement. A problem arises when an electron beam treatment is required as an intermediate step. This has necessitated the removal of a wafer from the tool to perform the electron beam exposure step and reinsertion for continued processing. The present invention solves this problem by providing an electron beam exposure module for a cluster tool. As a result, electron beam exposure can be done directly within a cluster tool, before or after other processing steps, without breaking vacuum or removal from the cluster tool.
- the invention provides a substrate processing tool comprising: a) at least one transport module enclosing an internal volume continuously maintainable under vacuum; b) a plurality of selectively accessible substrate processing modules in vacuum communication with the transport module, each processing module being capable of performing substrate processing therein under vacuum; the transport module having a plurality of ports and a substrate transport mechanism therein for selectively transferring substrates among a plurality of substrate processing modules in vacuum communication therewith through the ports; and wherein at least one substrate processing module is an electron beam radiation module capable of exposing a substrate to electron beam radiation; c) at least one loading module in communication with the internal volume of the transport module through one of the ports, which is capable of inserting one or more substrates into the transport module from an external environment, d) at least one unloading module in communication with the internal volume of the transport module through one of the ports, which is capable of removing one or more substrates from the transport module to the external environment.
- the invention also provides a process for treating a substrate which comprises I) providing a substrate processing tool comprising: a) at least one transport module enclosing an internal volume continuously maintainable under vacuum; b) a plurality of selectively accessible substrate processing modules in vacuum communication with the transport module, each processing module being capable of performing substrate processing therein under vacuum; the transport module having a plurality of ports and a substrate transport mechanism therein for selectively transferring substrates among a plurality of substrate processing modules in vacuum communication therewith through the ports; and wherein at least one substrate processing module is an electron beam radiation module capable of exposing a substrate to electron beam radiation; c) at least one loading module in communication with the internal volume of the transport module through one of the ports, which is capable of inserting one or more substrates into the transport module from an external environment, d) at least one unloading module in communication with the internal volume of the transport module through one of the ports, which is capable of removing one or more substrates from the transport module to the external environment; and
- the invention also provides an electron beam exposure module which is connectable to a substrate processing cluster tool which comprises a vacuum chamber, means for exposing a substrate to electron beam radiation in the chamber, and an interface for connecting the vacuum chamber in vacuum communication to a substrate processing cluster tool.
- Figure 1 shows a top view of a cluster tool arrangement according to the invention.
- Figure 2 shows a side view of a cluster tool arrangement according to the invention.
- Figure 3 shows a schematic diagram of an electron beam exposure tool which forms a part of an electron beam exposure module.
- DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT According to the present invention, Figure 1 shows a top view of a semiconductor wafer processing cluster tool 2 according to the invention. It is shown to comprise a transport module 4 which encloses an internal volume continuously maintainable under a vacuum.
- the transport module has a plurality of ports 6 which provide ingress and egress to the transport module 4.
- Figure 1 shows a configuration wherein the transport module is hexagonal and has a port 6 at each of its six sides. While the embodiment of Figure 1 shows a hexagonal configuration, it is to be understood that any shape transport module having any number of sides and any number of ports is within the contemplation of the invention.
- a wafer transport mechanism 8 for selectively transferring semiconductor wafers among a plurality of semiconductor wafer processing modules 10, 12, 14 and 16 which are attached to the transport module 4 in vacuum communication therewith through the ports 6.
- Such transport modules are well known in the art and are generally commercially available from The Equipe Division of PRI Automation which is located in B ⁇ -lerica, Massachusetts.
- a loading module or loadlock 18 which is in communication with the internal volume of the transport module 4.
- the loading module is capable of inserting one or more semiconductor wafers into the transport module 4 from the external environment.
- an unloading module or loadlock 20 which is in communication with the internal volume of the transport module 4.
- the loading module is capable of removing one or more semiconductor wafers from the transport module 4 to the external environment.
- Such loading and unloading modules are well known in the art and are generally commercially available, such as from the Equipe Division of PRI Automation. It is to be understood that although Figure 1 shows one loading and one unloading module, that a configuration having more than one loading and/or unloading module may be used.
- the cluster tools arrangement 2 further has a plurality semiconductor wafer processing modules 10, 12, 14 and 16 which are in vacuum communication with the transport module 4. These modules are accessible by the wafer transport mechanism 8 which can selectively move a wafer from one module to another, or to or from loadlocks 18 and 20 as desired.
- Each processing module is capable of performing semiconductor wafer processing therein under vacuum, however at least one semiconductor wafer processing module 10 is an electron beam radiation module capable of exposing a semiconductor wafer to electron beam radiation.
- modules 12, 14 and 16 may also be electron beam radiation modules or they may be capable of other wafer treatment processes as are well known in the art such as a semiconductor wafer coating module, heating module, cooling module, plasma etching module, ion implantation module, ultraviolet radiation exposure module, chemical mechanical polishing module, sputtering module, annealing module, vapor deposition module, chemical vapor deposition module, plasma enhanced chemical vapor deposition module and physical vapor deposition module.
- Such additional modules are well known in the art and are generally commercially available from such manufacturers as the Equipe Division of PRI Automation, Applied Materials, LAM Research, Materials Research Corporation and Novellus.
- preheating means such as a hotplate 19 in the loading module 18. Heating may be done from a temperature of from about 25 °C to about 500 °C.
- cooling means such as a cooling platen 21 in the unloading module 20. Cooling may reduce the temperature of the wafer from maximum temperature to which it has been heated in the cluster tool down to about room temperature, i.e. about 20 °C, or lower.
- the cluster tool arrangement comprises an electron beam exposure module 10 connected to the transport module 4 of cluster tool 2 via an interface 23.
- Figure 3 shows a schematic representation of the electron beam exposure tool which forms a part of an electron beam exposure module. It comprises an electron source 22 which projects electrons through a chamber 24 onto a wafer 26 which is placed on lift pins 28. Lift pins 28 are positioned by a suitable pneumatic lift 30. Electron beam exposure is preferably done in a thermal processing chamber 32 wherein the wafers are heated buy means of quartz lamps 32 which heats the wafers by means of quartz lamps 34. The chamber 24 is maintained at a desired vacuum via a pump 36 which is controlled by a valve 38.
- the electron beam exposure tool which is used which provides an large area electron source 22.
- Suitable electron beam tools are commercially available from Electron Vision, a unit of AlliedSignal Inc., under the trade name "ElectronCureTM". The principles of operation and performance characteristics of such device are described in U.S. Patent 5,001,178, the disclosure of which is expressly incorporated herein by reference.
- the electron beam radiation module comprises a uniform, large- area, overall electron beam exposure source which covers an exposure area of from about 4 square inches to about 256 square inches.
- the temperature of the wafer during electron beam exposure preferably ranges from about 20 °C to about 450 °C, more preferably from about 150°C to about 400 °C.
- the electron beam energy is preferably from about 1 to about 30 KeV, and more preferably from about 3 to about 10 KeV.
- the dose of electrons is preferably from about 1 to about 50,000 ⁇ C/cm 2 and more preferably from about 3,000 to about 20,000 ⁇ C/cm 2 .
- the gas ambient in the electron beam tool can be any of the following gases: nitrogen, oxygen, hydrogen, argon, helium, ammonia, silane, xenon or any combination of these gases. Gases are supplied in the electron beam module via gas lines and regulators 25.
- the electron beam current is preferably from about 1 to about 150 mA, and more preferably from about 5 to about 50 mA.
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CA002367204A CA2367204A1 (en) | 1999-03-19 | 2000-03-16 | Cluster tool for wafer processing having an electron beam exposure module |
AU38884/00A AU3888400A (en) | 1999-03-19 | 2000-03-16 | Cluster tool for wafer processing having an electron beam exposure module |
JP2000607250A JP2004506310A (en) | 1999-03-19 | 2000-03-16 | Semiconductor wafer processing apparatus and semiconductor wafer processing method |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US27286999A | 1999-03-19 | 1999-03-19 | |
US09/272,869 | 1999-03-19 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2000057456A1 true WO2000057456A1 (en) | 2000-09-28 |
Family
ID=23041646
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2000/006894 WO2000057456A1 (en) | 1999-03-19 | 2000-03-16 | Cluster tool for wafer processing having an electron beam exposure module |
Country Status (5)
Country | Link |
---|---|
US (1) | US20030102084A1 (en) |
JP (1) | JP2004506310A (en) |
AU (1) | AU3888400A (en) |
CA (1) | CA2367204A1 (en) |
WO (1) | WO2000057456A1 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102623311A (en) * | 2011-01-31 | 2012-08-01 | 北京泰龙电子技术有限公司 | Apparatus for preparing metal nitride barrier layer and application method thereof |
CN108206146A (en) * | 2016-12-16 | 2018-06-26 | 系统科技公司 | The apparatus for continuous treatment and method of substrate |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
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US6902771B2 (en) * | 2000-02-01 | 2005-06-07 | Jsr Corporation | Process for producing silica-based film, silica-based film, insulating film, and semiconductor device |
KR100397875B1 (en) * | 2000-05-18 | 2003-09-13 | 엘지.필립스 엘시디 주식회사 | Thin Film Transistor and method for fabricating the same |
US7026053B2 (en) * | 2001-01-29 | 2006-04-11 | Jsr Corporation | Process for producing silica-based film, silica-based film, insulating film, and semiconductor device |
US6843883B2 (en) * | 2001-08-31 | 2005-01-18 | Tdk Corporation | Vacuum processing apparatus and method for producing an object to be processed |
US7473695B2 (en) * | 2001-10-22 | 2009-01-06 | Mitsubishi Tanabe Pharma Corporation | 4-imidazolin-2-one compounds |
US6936551B2 (en) * | 2002-05-08 | 2005-08-30 | Applied Materials Inc. | Methods and apparatus for E-beam treatment used to fabricate integrated circuit devices |
FR2872502B1 (en) * | 2004-07-05 | 2006-11-10 | Ecole Norm Superieure Lyon | SURFACE MICROSTRUCTURING DEVICE |
EP2399271B1 (en) * | 2009-02-22 | 2013-01-16 | Mapper Lithography IP B.V. | Lithography machine and substrate handling arrangement |
JP6386394B2 (en) * | 2015-02-18 | 2018-09-05 | 東芝メモリ株式会社 | Compound process equipment |
TW202230583A (en) * | 2020-12-22 | 2022-08-01 | 日商東京威力科創股份有限公司 | Substrate processing system and particle removal method |
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- 2000-03-16 CA CA002367204A patent/CA2367204A1/en not_active Abandoned
- 2000-03-16 AU AU38884/00A patent/AU3888400A/en not_active Abandoned
- 2000-03-16 WO PCT/US2000/006894 patent/WO2000057456A1/en active Application Filing
-
2003
- 2003-01-14 US US10/342,469 patent/US20030102084A1/en not_active Abandoned
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102623311A (en) * | 2011-01-31 | 2012-08-01 | 北京泰龙电子技术有限公司 | Apparatus for preparing metal nitride barrier layer and application method thereof |
CN108206146A (en) * | 2016-12-16 | 2018-06-26 | 系统科技公司 | The apparatus for continuous treatment and method of substrate |
Also Published As
Publication number | Publication date |
---|---|
CA2367204A1 (en) | 2000-09-28 |
JP2004506310A (en) | 2004-02-26 |
AU3888400A (en) | 2000-10-09 |
US20030102084A1 (en) | 2003-06-05 |
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