WO2000055089A1 - A method of manufacturing a thermal bend actuator - Google Patents
A method of manufacturing a thermal bend actuator Download PDFInfo
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- WO2000055089A1 WO2000055089A1 PCT/AU2000/000172 AU0000172W WO0055089A1 WO 2000055089 A1 WO2000055089 A1 WO 2000055089A1 AU 0000172 W AU0000172 W AU 0000172W WO 0055089 A1 WO0055089 A1 WO 0055089A1
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- layer
- etching
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- bend actuator
- substrate
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- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 238000005530 etching Methods 0.000 claims abstract description 42
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 238000000151 deposition Methods 0.000 claims abstract description 36
- 239000010410 layer Substances 0.000 claims description 113
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- 238000000034 method Methods 0.000 claims description 40
- 238000010438 heat treatment Methods 0.000 claims description 11
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 10
- 239000011241 protective layer Substances 0.000 claims description 2
- 238000007641 inkjet printing Methods 0.000 abstract description 7
- 239000004642 Polyimide Substances 0.000 description 35
- 229920001721 polyimide Polymers 0.000 description 35
- 150000004767 nitrides Chemical class 0.000 description 14
- 235000012431 wafers Nutrition 0.000 description 12
- 229910052581 Si3N4 Inorganic materials 0.000 description 11
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 11
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 10
- 229910052782 aluminium Inorganic materials 0.000 description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 10
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 9
- 230000005499 meniscus Effects 0.000 description 7
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- 230000008021 deposition Effects 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/164—Manufacturing processes thin film formation
- B41J2/1646—Manufacturing processes thin film formation thin film formation by sputtering
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2/14427—Structure of ink jet print heads with thermal bend detached actuators
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1626—Manufacturing processes etching
- B41J2/1628—Manufacturing processes etching dry etching
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1626—Manufacturing processes etching
- B41J2/1629—Manufacturing processes etching wet etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1631—Manufacturing processes photolithography
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1635—Manufacturing processes dividing the wafer into individual chips
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/1637—Manufacturing processes molding
- B41J2/1639—Manufacturing processes molding sacrificial molding
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/164—Manufacturing processes thin film formation
- B41J2/1642—Manufacturing processes thin film formation thin film formation by CVD [chemical vapor deposition]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1621—Manufacturing processes
- B41J2/164—Manufacturing processes thin film formation
- B41J2/1645—Manufacturing processes thin film formation thin film formation by spincoating
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
- B41J2/01—Ink jet
- B41J2/135—Nozzles
- B41J2/16—Production of nozzles
- B41J2/1648—Production of print heads with thermal bend detached actuators
Definitions
- the present invention relates to the field of micro electromechanical devices such as ink jet printers.
- micro electromechanical devices such as ink jet printers.
- the present invention will be described herein with reference to Micro Electro Mechanical Inkjet technology. However, it will be appreciated that the invention does have broader applications to other micro electro-mechanical devices, e.g. micro electro-mechanical pumps or micro electro-mechanical movers.
- Micro electro-mechanical devices are becoming increasingly popular and normally involve the creation of devices on the ⁇ m (micron) scale utilizing semiconductor fabrication techniques.
- ⁇ m micron
- semiconductor fabrication techniques For a recent review on micro-mechanical devices, reference is made to the article "The Broad Sweep of Integrated Micro Systems" by S. Tom Picraux and Paul J. McWhorter published December 1998 in IEEE Spectrum at pages 24 to 33.
- ink jet printing devices in which ink is ejected from an ink ejection nozzle chamber.
- Many forms of ink jet devices are known.
- Many different techniques on ink jet printing and associated devices have been invented. For a survey of the field, reference is made to an article by J Moore, “Non- Impact Printing: Introduction and Historical Perspective", Output Hard Copy Devices, Editors R Dubeck and S Sherr, pages 207 - 220 (1988).
- MEMJET Micro Electro Mechanical Inkjet
- ink is ejected from an ink ejection nozzle chamber utilizing an electro mechanical actuator connected to a paddle or plunger which moves towards the ejection nozzle of the chamber for ejection of drops of ink from the ejection nozzle chamber.
- the present invention concerns a method of manufacture of a thermal bend actuator for use in the MEMJET technology or other micro electro-mechanical devices. Summary of the Invention
- a method of manufacture of a thermal bend actuator comprising the steps of
- step (c) the third material may be deposited and etched to form the first bend actuator layer and a first paddle layer of the bend actuator.
- step (e) the fifth material may be deposited and etched to form the second bend actuator layer and a second paddle layer of the bend actuator.
- the method may comprise, before step (b), the step of:
- the method can further comprise, before step (f), the steps of (h) depositing and etching, using a seventh mask, a seventh material on the substrate to form a third sacrificial layer in a manner such that the third sacrificial layer covers substantially the entire second bend actuator layer; (i) forming a first conformal layer of an eighth material covering the third sacrificial layer on the substrate; and wherein step (f) further comprises etching away the third sacrificial layer to form a nozzle chamber around and above the bend actuator.
- the method may comprise, before step (f), the step of (j) back etching the substrate from a back surface of the substrate to the first conductive layer for facilitating step (f).
- the method may comprise, before step (i), the step of: (k) depositing and etching a ninth material on the substrate to form a ninth mask in the ninth material on top of the third sacrificial layer; (1) etching, using the tenth mask, portions of the third sacrificial layer; and wherein step (i) further comprises depositing the eighth material in a manner such as to fill the etched portions of the third sacrificial layer to form a side wall structure of the nozzle chamber.
- the method can also further comprise, before step (f) the step of: (m) etching the first conformal layer to form a nozzle of the nozzle chamber.
- Step (m) may comprise depositing and etching a tenth material to form a tenth mask on top of the first conformal layer, and etching the first conformal layer through the tenth mask to from the nozzle; and wherein step (f) further comprises etching away the tenth material.
- the method may further comprise, before step (f), the step of: (n) forming a vertical nozzle wall of the nozzle by depositing and etching an eleventh material, wherein the etch comprises an overetch.
- the first conductive bend actuator layer and the second bend actuator layer can comprise substantially the same material such as titanium nitride.
- Fig. 1 to Fig. 3 illustrate schematically the operation of the preferred embodiment
- Fig. 4 to Fig. 6 illustrate schematically a first thermal bend actuator
- Fig. 7 to Fig. 8 illustrate schematically a second thermal bend actuator
- Fig. 9 to Fig. 10 illustrate schematically a third thermal bend actuator
- Fig. 11 illustrates schematically a further thermal bend actuator
- Fig. 12 illustrates an example graph of temperature with respect to distance for the arrangement of Fig. 11 ;
- Fig. 13 illustrates schematically a further thermal bend actuator
- Fig. 14 illustrates an example graph of temperature with respect to distance for the arrangement of Fig. 13;
- Fig. 15 illustrates schematically a further thermal bend actuator;
- Fig. 16 illustrates a side perspective view of the aluminum layer
- Fig. 17 illustrates a plan view of the aluminum mask
- Fig. 18 illustrates a side sectional view of the aluminum layer
- Fig. 19 illustrates a side perspective view of the first silicon Nitride layer
- Fig. 20 illustrates a plan view of the first silicon Nitride mask
- Fig. 21 illustrates a side sectional view of the first silicon Nitride layer
- Fig. 22 illustrates a side perspective view of the first sacrificial polyimide layer
- Fig. 23 illustrates a plan view of the first sacrificial polyimide mask
- Fig. 24 illustrates a side sectional view of the first sacrificial polyimide layer
- Fig. 25 illustrates a side perspective view of the first Titanium Nitride layer
- Fig. 26 illustrates a plan view of the first Titanium Nitride mask
- Fig. 27 illustrates a side sectional view of the first Titanium Nitride layer
- Fig. 28 illustrates a side perspective view of the second sacrificial polyimide layer
- Fig. 29 illustrates a plan view of the second sacrificial polyimide mask
- Fig. 30 illustrates a side sectional view of the second sacrificial polyimide layer
- Fig. 31 illustrates a side perspective view of the second Titanium Nitride layer
- Fig. 32 illustrates a plan view of the second Titanium Nitride mask
- Fig. 33 illustrates a side sectional view of the second Titanium Nitride layer
- Fig. 34 illustrates a side perspective view of the third sacrificial polyimide layer
- Fig. 35 illustrates a plan view of the third sacrificial polyimide mask
- Fig. 36 illustrates a side sectional view of the third sacrificial polyimide layer
- Fig. 37 illustrates a side perspective view of the sacrificial polyimide etch
- Fig. 38 illustrates a plan view of no mask
- Fig. 39 illustrates a side sectional view of the sacrificial polyimide etch
- Fig. 40 illustrates a side perspective view of the conformal silicon nitride deposition
- Fig. 41 illustrates a plan view of no mask
- Fig. 42 illustrates a side sectional view of the conformal silicon nitride deposition
- Fig. 43 illustrates a side perspective view of the sacrificial polyimide etch
- Fig. 44 illustrates a plan view of the polyimide etch mask
- Fig. 45 illustrates a side sectional view of the sacrificial polyimide etch
- Fig. 46 illustrates a side perspective view of the PECVD nitride deposition
- Fig. 47 illustrates a plan view of no mask
- Fig. 48 illustrates a side sectional view of the PECVD nitride deposition
- Fig. 49 illustrates a side perspective view of the Anisotropic Nitride etch
- Fig. 50 illustrates a plan view of no mask
- Fig. 51 illustrates a side sectional view of the Anisotropic Nitride etch
- Fig. 52 illustrates a side perspective view of the softbake resist
- Fig. 53 illustrates a plan view of no mask
- Fig. 54 illustrates a side sectional view of the softbake resist
- Fig. 55 illustrates a side perspective view of the back etch process
- Fig. 56 illustrates a plan view of the back etch mask
- Fig. 57 illustrates a side sectional view of the back etch process
- Fig. 58 illustrates a side perspective view of the organic material stripping
- Fig. 59 illustrates a plan view of no mask
- Fig. 60 illustrates a side sectional view of the organic material stripping
- Fig. 61 illustrates a side perspective view partly in section of a single nozzle in a deactuated position
- Fig. 62 illustrates a plan view of no mask
- Fig. 63 illustrates a side sectional view of the package, bond prime and test
- Fig. 64 illustrates a side perspective view partly in section of a single nozzle in an actuated position
- Fig. 65 illustrates a side section view of an actuating nozzle
- Fig. 66 illustrates a side perspective view in section of a nozzle ejecting ink
- Fig. 67 illustrates a side sectional view of a deactuated nozzle
- Fig. 68 illustrates a side perspective view of a portion of an array of nozzles
- Fig. 69 illustrates a top plan view of a portion of an array of nozzles
- Fig. 70 illustrates a side perspective view of a portion of an array of nozzles
- Fig. 71 illustrates a side perspective view of a portion of an array of nozzles
- Fig. 72 illustrates a side perspective view of a prototype chip
- Fig. 73 illustrates a side perspective view of a mounted prototype chip.
- a compact form of liquid ejection device which utilises a thermal bend actuator to eject ink from a nozzle chamber.
- Fig. 1 - 3 there will now be explained the operational principals of the preferred embodiment.
- an ink ejection arrangement 1 which comprises a nozzle chamber 2 which is normally filled with ink so as to form a meniscus 3 around an ink ejection nozzle 4 having a raised rim.
- the ink within the nozzle chamber 2 is resupplied by means of ink supply channel 5.
- the ink is ejected from a nozzle chamber 2 by means of a thermal actuator 7 which is rigidly interconnected to a nozzle paddle 8.
- the thermal actuator 7 comprises two arms 10, 11 with the bottom arm 11 being interconnected to a electrical current source so as to provide conductive heating of the bottom arm 11.
- the bottom arm 11 is heated so as to cause the rapid expansion of this arm 11 relative to the top arm 10.
- the rapid expansion in turn causes a rapid upward movement of the paddle 8 within the nozzle chamber 2.
- the initial movement is illustrated in Fig. 2 with the arm 8 having moved upwards so as to cause a substantial increase in pressure within the nozzle chamber 2 which in turn causes ink to flow out of the nozzle 4 causing the meniscus 3 to bulge.
- the nozzle chamber comprises a profile edge 15, which, as the paddle 8 moves up, causes a large increase in the channel space 16 as illustrated in Fig. 2.
- This large channel space 16 allows for substantial amounts of ink to flow rapidly into the nozzle chamber 2 with the ink being drawn through the channel 16 by means of surface tension effects of the ink meniscus 3.
- the profiling of the nozzle chamber allows for the rapid refill of the nozzle chamber with the arrangement eventually returning to the quiescent position as previously illustrated in Fig. 1.
- the arrangement 1 also comprises a number of other significant features. These comprise a circular rim 18, as shown in Fig. 1 which is formed around an external circumference of the paddle 8 and provides for structural support for the paddle 8 whilst substantially maximising the distance between the meniscus 3, as illustrated in Fig. 3 and the paddle surface 8. The maximising of this distance reduces the likelihood of meniscus 3 making contact with the paddle surface 8 and thereby affecting the operational characteristic. Further, as part of the manufacturing steps, an ink outflow prevention lip 19 is provided for reducing the possibility of ink wicking along a surface eg. 20 and thereby affecting the operational characteristics of the arrangement 1.
- a thermal bend actuator attached to a substrate 22 which comprises an actuator arm 23 on both sides of which are activating arms 24, 25.
- the two arms 24, 25 are preferably formed from the same material so as to be in a thermal balance with one another.
- a pressure P is assumed to act on the surface of the actuator arm 23.
- the bottom arm 25 is heated so as to reduce the tensile stress between the top and bottom arm 24, 25. This results in an output resultant force on the actuator arm 23 which results in its general upward movement.
- the portion 26 of the actuator arm 23 between the activating portion 24, 25 will be in a state of shear stress and, as a result, efficiencies of operation may be lost in this embodiment. Further, the presence of the material 26 can resulted in rapid thermal conductivity from the arm portion 25 to the arm portion 24.
- the thermal arm 25 must be operated at a temperature which is suitable for operating the arm 23.
- the operational characteristics are limited by the characteristics, eg. melting point, of the portion 26.
- Fig. 9 there is illustrated an alternative form of thermal bend actuator which comprises the two arms 24, 25 and actuator arm 23 but wherein there is provided a space or gap 28 between the arms.
- the arm 25 bends upward as before.
- the arrangement of Fig. 10 has the advantage that the operational characteristics eg. temperature, of the arms 24, 25 may not necessarily be limited by the material utilised in the arm 23. Further, the arrangement of Fig. 10 does not induce a sheer force in the arm 23 and also has a lower probability of delaminating during operation.
- These principals are utilised in the thermal bend actuator of the arrangement of Fig. 1 to Fig. 3 so as to provide for a more energy efficient form of operation.
- a thermal actuator relies on conductive heating and, the arrangement utilised in the preferred embodiment can be schematically simplified as illustrated in Fig. 11 to a material 30 which is interconnected at a first end 31 to a substrate and at a second end 32 to a load.
- the thermal profile of the arm 30 is conductively heated so as to expand and exert a force on the load 32.
- the temperature profile will be approximately as illustrated in Fig. 12.
- the two ends 31, 32 act as "heat sinks" for the conductive thermal heating and so the temperature profile is cooler at each end and hottest in the middle.
- the operational characteristics of the arm 30 will be determined by the melting point 35 in that if the temperature in the middle 36 exceeds the melting point 35, the arm may fail.
- the graph of Fig. 12 represents a non optimal result in that the arm 30 in Fig. 1 1 is not heated uniformly along its length.
- a more optimal thermal profile as illustrated in Fig. 14, can be achieved.
- the profile of Fig. 14 has a more uniform heating across the lengths of the arm 30 thereby providing for more efficient overall operation.
- FIG. 15 further efficiencies and reduction in buckling likelihood can be achieved by providing a series of struts to couple the two actuator activation arms 24, 25.
- a series of struts eg. 40, 41 are provided to couple the two arms 24, 25 so as to prevent buckling thereof.
- CMOS + MEMS prototype Before an integrated CMOS + MEMS prototype is made, it is desirable to provide for the fabrication of a MEMS only prototype.
- the MEMS prototype can be made very faithfully to a full print head, with nearly identical actuator and nozzle structure.
- the main limitation of a MEMS only prototype is that the number of nozzles is limited, as a separate bond pad is required for each nozzle. An extension to a full CMOS arrangement is discussed later.
- the prototype described here has only 15 nozzles per chip.
- the behavior of a few groups of 5 nozzles is a near perfect model of the entire chip performance, as the fluidic, thermal, electrical, acoustic, or mechanical coupling between 5 nozzle groups is extremely small.
- a chip layout with 15 nozzles is shown in Fig. 72. This chip is 3 mm x 3 mm, and is replicated on a 1.2 x 1.2 cm mask set.
- the chip can be manufactured using the following process steps with the drawings illustrating the masks etc for a single nozzle unit cell.
- This mask 10 (Fig. 17) leaving the structure as illustrated in Fig. 16 and 18.
- This mask 10 includes the electrodes 16 to the actuator, the bond pads 18, and the wiring between these items. It is possible to replace the aluminum with TiN wiring and bond pads. However, that would diverge further from the CMOS + MEMS design, and add process risks.
- the region around the nozzle chamber is on Metal 1 for a 1P2M CMOS + MEMS process, while the electrodes are on metal 2.
- One micron of PECVD silicon nitride 24 is deposited and etched using Mask 20 (Fig. 20) so as to leave the structure illustrated in Fig. 19 and 21.
- This mask 20 includes the vias 22 from the aluminum to the first TiN layer, and some fluid control aspects.
- this is the passivation layer, and will typically be 0.5 microns of glass followed by 0.5 microns of silicon nitride.
- a pure njtride passivation layer is preferable, to prevent ions from the ink from diffusing through the glass.
- spin-on photosensitive polyimide 26 1.5 microns of spin-on photosensitive polyimide 26 is deposited and exposed using UV light to Mask 28 (Fig. 23) so as to leave the structure illustrated in Fig. 22 and 24.
- the polyimide 26 is then developed.
- the polyimide 26 is sacrificial, so there is a wide range of alternative materials which can be used. Photosensitive polyimide simplifies the processing, as it eliminates deposition, etching, and resist stripping steps.
- 0.2 microns of magnetron sputtered titanium nitride 30 is deposited at 300°C and etched using Mask 32 (Fig. 26) so as to leave the structure illustrated in Fig. 25 and 27.
- This layer 30 contains the actuator layer 34 and part of the paddle 36.
- the resistivity of this layer of TiN should be consistent to within a few percent over the wafer. 5) 1.5 Microns Sacrificial Polyimide
- photosensitive polyimide 38 1.5 microns of photosensitive polyimide 38 is spun on and exposed using UV light to Mask 40 (Fig. 29) so as to leave the structure illustrated in Fig.28 and 30.
- the polyimide 38 is then developed.
- the thickness determines the gap between the actuator layer 34 and compensator TiN layers (step 6), so has an effect on the amount that the actuator layer 34 bends.
- the use of photosensitive polyimide simplifies the processing over other sacrificial materials.
- TiN is etched using Mask 42 (Fig. 32) so as to leave the structure as illustrated in Fig. 31 and 33.
- the electrical properties of the TiN 40 are not important. This top layer of TiN 40 is not electrically connected, and is used purely as a mechanical component.
- PECVD silicon nitride 53 is deposited at 300°C, filling the channels formed in the previous polyimide layer 44, forming the nozzle chamber 50.
- 1 micron of PECVD silicon nitride 54 is deposited at 300°C (no mask - Fig. 41). This layer is not particularly critical. The major requirement is good adhesion to TiN. Enclosed vacuoles should not cause problems.
- the nitride deposition is followed by 1 micron of polyimide 56, which is hardbaked. The resulting structure is as illustrated in Fig. 40 and 42.
- the polyimide 56 is etched down to nitride 54 using Mask 58 as shown in Fig. 44.
- the nitride 54 is then etched down to polyimide 44 using the polyimide 56 as a mask leaving the resulting structure as shown in Fig. 43 to Fig. 45.
- a thin film of conformal PECVD silicon nitride 60 is deposited at 300°C using no mask (Fig. 47). This layer ultimately forms the nozzle rims, using a "sidewall spacer" like process. The thickness is not particularly critical, and could be substantially thinner if desired, as there is insignificant fluidic pressure acting on the rim. The resulting structure is as illustrated in Fig. 46 and 48.
- the nozzle rim nitride 60 is anisotropically plasma etched with out a mask (Fig. 50).
- the etch can be timed, as etch depth is not critical.
- Substantial overetch is required to ensure than only vertical nitride walls 62 remain, and that nitride over sloping topography is completely removed.
- the resulting structure is as illustrated in Fig. 49 and 51.
- This resist layer 64 is to protect the front side of the wafer during backetch.
- the resist thickness is to cover the topography of the MEMS devices, and thereby allow a vacuum chuck to be used.
- the resulting structure is as illustrated in Fig. 52 and 54.
- the wafer/substrate 14 is thinned to 300 microns (to reduce back-etch time), and 3 microns of resist on the back-side 66 of the wafer 14 is exposed to Mask 68 (Fig. 56).
- Alignment is to metal portions 70 on the front side of the wafer 14. This alignment can be achieved using an LR microscope attachment to the wafer aligner. The wafer 14 is then placed on a platter and etched to a depth of 330 microns (allowing 10 % overetch) using the deep silicon etch "Bosch process". This process is available on plasma etchers from Alcatel, Plasma-therm, and Surface Technology Systems. The resulting structure is as illustrated in Fig. 55 and 57.
- the chips were diced by previous Bosch process back-etch. However, the wafer 14 is still held together by 11 microns of polyimide. The wafers 14 must now be turned over. This can be done by placing a tray over the wafer on the platter, and turning the whole assembly (platter, wafer and tray) over while maintaining light pressure. The platter is then removed, and the wafer 14 (still in the tray) is placed in the oxygen plasma chamber. All of the sacrificial polyimide is etched in an oxygen plasma (no mask Fig. 59), resulting in the structure as illustrated in Fig. 58 and 60.
- Figs. 64 to 67 illustrate the operation of the nozzle 74.
- the prototype Memjet chips are 3 mm square, but the ink inlet hole region is only about 240 x 160 microns, in the center of the chip. Glue the chip into the package so that the chip ink inlet is over the hole in the package. This requires only 500 micron accuracy. Wire bond the 6 connections to nozzles to be tested. Fill the packaged printhead under approx. 5 kPa ink pressure to prime it. The resulting package can be as illustrated in Fig. 72 and Fig. 73.
- the presently disclosed ink jet printing technology is potentially suited to a wide range of printing systems including: colour and monochrome office printers, short run digital printers, high speed digital printers, offset press supplemental printers, low cost scanning printers, high speed pagewidth printers, notebook computers with inbuilt pagewidth printers, portable color and monochrome printers, color and monochrome copiers, color and monochrome facsimile machines, combined printer, facsimile and copying machines, label printers, large format plotters, photograph copiers, printers for digital photographic 'minilabs', video printers, PhotoCD printers, portable printers for PDAs, wallpaper printers, indoor sign printers, billboard printers, fabric printers, camera printers and fault tolerant commercial printer arrays.
- MEMS principles outlined have general applicability in the construction of MEMS devices.
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
- Micromachines (AREA)
- Transition And Organic Metals Composition Catalysts For Addition Polymerization (AREA)
- Control Of Motors That Do Not Use Commutators (AREA)
- Prostheses (AREA)
- Toys (AREA)
- Control Of Vending Devices And Auxiliary Devices For Vending Devices (AREA)
- Shaping Of Tube Ends By Bending Or Straightening (AREA)
Abstract
Description
Claims
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP00907360A EP1171378B1 (en) | 1999-03-16 | 2000-03-10 | A method of manufacturing a thermal bend actuator |
JP2000605524A JP4711514B2 (en) | 1999-03-16 | 2000-03-10 | Manufacturing method of thermal bending actuator |
DE60014615T DE60014615D1 (en) | 1999-03-16 | 2000-03-10 | METHOD FOR PRODUCING A THERMALLY BENDABLE ACTUATING ELEMENT |
AT00907360T ATE278636T1 (en) | 1999-03-16 | 2000-03-10 | METHOD FOR PRODUCING A THERMALLY BENDABLE ACTUATING ELEMENT |
AU28972/00A AU775594B2 (en) | 1999-03-16 | 2000-03-10 | A method of manufacturing a thermal bend actuator |
AU2004226969A AU2004226969B2 (en) | 1999-03-16 | 2004-11-04 | Forming a bend actuator of a micro-electromechanical device |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AUPP9223 | 1999-03-16 | ||
AUPP9223A AUPP922399A0 (en) | 1999-03-16 | 1999-03-16 | A method and apparatus (ij46p2) |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2000055089A1 true WO2000055089A1 (en) | 2000-09-21 |
Family
ID=3813419
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/AU2000/000172 WO2000055089A1 (en) | 1999-03-16 | 2000-03-10 | A method of manufacturing a thermal bend actuator |
Country Status (7)
Country | Link |
---|---|
US (1) | US6426014B1 (en) |
EP (1) | EP1171378B1 (en) |
JP (1) | JP4711514B2 (en) |
AT (1) | ATE278636T1 (en) |
AU (1) | AUPP922399A0 (en) |
DE (1) | DE60014615D1 (en) |
WO (1) | WO2000055089A1 (en) |
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- 2000-03-10 JP JP2000605524A patent/JP4711514B2/en not_active Expired - Fee Related
- 2000-03-10 AT AT00907360T patent/ATE278636T1/en not_active IP Right Cessation
- 2000-03-10 DE DE60014615T patent/DE60014615D1/en not_active Expired - Lifetime
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Also Published As
Publication number | Publication date |
---|---|
DE60014615D1 (en) | 2004-11-11 |
ATE278636T1 (en) | 2004-10-15 |
EP1171378A1 (en) | 2002-01-16 |
AUPP922399A0 (en) | 1999-04-15 |
JP4711514B2 (en) | 2011-06-29 |
US6426014B1 (en) | 2002-07-30 |
EP1171378A4 (en) | 2002-05-02 |
JP2002538981A (en) | 2002-11-19 |
EP1171378B1 (en) | 2004-10-06 |
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