WO2000042636A2 - Micromachined device and method of forming the micromachined device - Google Patents

Micromachined device and method of forming the micromachined device Download PDF

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Publication number
WO2000042636A2
WO2000042636A2 PCT/US2000/000670 US0000670W WO0042636A2 WO 2000042636 A2 WO2000042636 A2 WO 2000042636A2 US 0000670 W US0000670 W US 0000670W WO 0042636 A2 WO0042636 A2 WO 0042636A2
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WO
WIPO (PCT)
Prior art keywords
substrate
micromachined
micromachined device
cover
conductive
Prior art date
Application number
PCT/US2000/000670
Other languages
French (fr)
Other versions
WO2000042636A3 (en
WO2000042636A9 (en
Inventor
Robert W. Steenberge
William P. Taylor
Original Assignee
Teledyne Technologies Incorporated
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Teledyne Technologies Incorporated filed Critical Teledyne Technologies Incorporated
Priority to AU25023/00A priority Critical patent/AU2502300A/en
Publication of WO2000042636A2 publication Critical patent/WO2000042636A2/en
Publication of WO2000042636A3 publication Critical patent/WO2000042636A3/en
Publication of WO2000042636A9 publication Critical patent/WO2000042636A9/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
    • H01L23/055—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body the leads having a passage through the base
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/4826—Connecting between the body and an opposite side of the item with respect to the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16195—Flat cap [not enclosing an internal cavity]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Definitions

  • the present invention is directed generally to a micromachined device and,
  • the present invention is also directed generally to a method of forming a
  • micromachined device and, more particularly, to a method of forming a
  • micromachined device in which the device and a portion of the package are integral.
  • Electromechanical relays are used in a wide variety of applications, such as
  • Electromechanical relays are technologies, and automotive and medical electronics. Electromechanical relays,
  • Solid state relays provide one solution to this problem, by providing
  • Micromachined relays are electromechanical relays produced by batch
  • Micromachining commonly refers to the use of semiconductor
  • MEMS may include any process which uses fabrication techniques such as, for
  • MEMS fabrication processes involve the sequential addition or removal of materials from a substrate layer through the use of thin film deposition and
  • Micromachined relays seek to combine the best attributes of electromechanical
  • micromachined relays provide the decreased size of solid-state
  • Micromachined relays also provide
  • micromachined relays allow for the interconnection of large relay arrays during
  • micromachined devices are typically batch
  • the substrate is then sectioned, or diced, to form multiple
  • semiconductor die such as, for example, on a lead frame, chip carrier, or other typical
  • electromechanical relays First, the overall size of the device is increased, and second,
  • the substrate on which the micromachined relay is formed and the package in which it is housed are often made of similar materials,
  • the additional packaging step results in an increased signal path length
  • micromachined devices such that the size of the package is decreased and which
  • the present invention is directed to an apparatus including a substrate having
  • a micromachined device is integral with the first surface of
  • the substrate and the second surface is an outer portion of the apparatus.
  • the apparatus also includes a cover connected to the substrate.
  • the present invention is
  • the method includes
  • the substrate is not enclosed by the cover.
  • the present invention has the advantage that it has reduced production costs.
  • the present invention also has the advantage that the length of the leads of the device can be made small when compared to leads of
  • the present invention also provides a high frequency performance, especially for high frequency applications.
  • Figure 1 is a cross-sectional view of an apparatus according to the present
  • Figure 2 is a cross-sectional view of an apparatus according to another
  • Figure 3 is a cross-sectional view of an apparatus according to another
  • Figure 4 is a cross-sectional view of an apparatus according to another
  • Figure 5 is a perspective view of a substrate and a number of micromachined
  • FIG. 1 is a cross-sectional view of an apparatus 10 according to the present
  • the apparatus 10 includes a substrate 12, a micromachined device 14, and
  • the substrate 12 may be a non-conductive material, such as, for example,
  • the micromachined device 14 is integrally formed
  • micromachining fabrication techniques which include surface and bulk
  • the micromachined device 14 may be, for example, a
  • micromachined relay such as that described in U.S. Patent No. 5,847,631, issued to
  • micromachined device 14 may be an array of
  • micromachined relays or it may be, for example, a valve, switch, actuator, sensor, or
  • the cover 16 is connected to the substrate 12 and encloses the micromachined
  • the substrate 12 and the cover 16 form a housing, or package, for the
  • micromachined device 14 thus providing a micromachined device 14 that is integral
  • micromachined device 14 is a micromachined relay, may be used in high frequency
  • the footprint of the apparatus 10 may
  • the substrate 12 may define a number of holes extending from the first surface
  • the holes in the substrate 12 may be filled with electrically conductive material, such as metal or conductive polymers, to
  • the conductive vias 22 may be formed by, for example,
  • thick film techniques such as screen-printing of conductive paste
  • doctor blading
  • the conductive vias 22 may form a grid array and may be connected to conductive
  • solder balls 24 such as solder balls used in ball grid array (BGA) arrangements.
  • BGA ball grid array
  • conductive vias 22 and conductive balls 24 form a signal path between the
  • PGA pin grid array
  • DIP dual in-line package
  • SOP small outline package
  • the BGA embodiment has the advantage that the length of
  • the signal leads provided directly through the conductive vias 22, are comparatively
  • the cover 16 may be constructed of non-conductive material, such as plastic
  • the cover 16 may also be constructed of an electrically conductive
  • the cover 16 may be connected to the substrate 12, such as by epoxy
  • FIG. 2 is a cross-sectional view illustrating another embodiment of the
  • the cover 16 is formed
  • a wall 30 and a lid 32 may be bonded
  • both the micromachined device 14 and the cover 16 may be batch fabricated and bonded in batch to produce a hermetically
  • FIG. 3 is a cross-sectional view of the apparatus 10
  • the cover 16 includes a stepped lip 26.
  • the stepped lip 26 may be
  • the cover 16 may be
  • Fig. 4 is a cross-sectional view of the apparatus 10 according to another
  • the bond pads 40 are connected to a number of pins 42, thus forming a signal path
  • the present invention is also directed to a method of forming a
  • micromachined device 14 The method includes providing a substrate 12, fabricating
  • micromachined device 14 on the substrate 12, such as by batch microfabrication
  • microfabrication techniques include surface micromachining
  • a cover 16 is connected to the substrate 12, such as by
  • micromachined device 14 is integrated with the package thereof.
  • the method may include, prior to the fabrication of the micromachined device
  • Conductive vias 22 may be
  • the substrate 12 and the substrate 12 are conductive material, such as metal or conductive polymers.
  • conductive material such as metal or conductive polymers.
  • conductive vias 22 may be polished to a desired flatness.
  • the micromachined device 14 are connected to the conductive vias.
  • the surface of the micromachined device 14 is connected to the conductive vias.
  • substrate 12 on which the micromachined device 14 is formed may be larger in area
  • Fig. 5 is a perspective view of a substrate 12 having a number
  • solder such as solder or other materials capable of reflow
  • the substrate 12 may be cut, such as by a wafer or substrate saw,
  • a cover 16 may be
  • balls 24 may be connected to the conductive vias 22 adjacent the second surface 20 of
  • processing may also be varied.

Abstract

An apparatus (10) that includes a substrate (12) having first and second surfaces and a micromachined device (14) integral with the first surface (18) of the substrate (12), and wherein the second surface (20) is an outer portion of the apparatus (10). The apparatus (10) also has a cover (16) connected to the substrate (12). A method of forming a micromachined device (14) includes providing a substrate (12), fabricating the micromachined device (14) on the substrate (12), and connecting a cover (16) to the substrate (12).

Description

MICROMACHINED DEVICE AND METHOD OF FORMING THE MICROMACHINED DEVICE
CROSS REFERENCE TO RELATED APPLICATIONS
Not Applicable.
STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT
Not Applicable.
BACKGROUND OF THE INVENTION
Field of the Invention
The present invention is directed generally to a micromachined device and,
more particularly, to a micromachined device that is integral with a portion of its
package. The present invention is also directed generally to a method of forming a
micromachined device and, more particularly, to a method of forming a
micromachined device in which the device and a portion of the package are integral. Description of the Background
Electromechanical relays are used in a wide variety of applications, such as
automatic test systems, instrumentation equipment, telecommunications, wireless
technologies, and automotive and medical electronics. Electromechanical relays,
however, are typically fabricated on an individual basis by either manual or automated
processes. This often results in undesirable unit-to-unit variability. In addition,
conventional electromechanical relays are relatively large compared to other
electronic components, and are increasingly becoming a limiting factor as the
packaging density of electronic devices continues to increase.
Solid state relays (SSRs) provide one solution to this problem, by providing
for batch fabrication of the devices and reducing the overall size of the device. SSRs,
however, often suffer from higher offset voltages, lower maximum off-state
resistance, higher contact capacitance, and higher contact power dissipation in
comparison to electromechanical relays. This makes SSRs unsuitable for many
applications.
Micromachined relays are electromechanical relays produced by batch
fabrication techniques. Micromachining commonly refers to the use of semiconductor
processing techniques to fabricate devices known as micro electromechanical systems
(MEMS), and may include any process which uses fabrication techniques such as, for
example, photolithography, electroplating, sputtering, evaporation, plasma etching,
lamination, spin or spray coating, diffusion, or other microfabrication techniques. In
general, known MEMS fabrication processes involve the sequential addition or removal of materials from a substrate layer through the use of thin film deposition and
etching techniques, respectively, until the desired structure has been achieved.
Micromachined relays seek to combine the best attributes of electromechanical
relays and SSRs. That is, micromachined relays provide the decreased size of solid-
state devices and the increased off resistance and lower on resistance of typical
electromechanical relays, in addition to the lower contact capacitance of
electromechanical relays. These advantages are especially important for applications
utilizing relays to test semiconductor chips, which have decreased in size and
increased in frequency response over the years. Micromachined relays also provide
an advantage in that they can be manufactured at a relatively low cost because they
can be batch fabricated using established micromachining techniques. Also,
micromachined relays allow for the interconnection of large relay arrays during
fabrication, thus reducing other fabrication steps needed for typical relay arrays.
MEMS fabrication techniques largely follow the fabrication techniques of the
semiconductor industry. For example, micromachined devices are typically batch
fabricated on a substrate. The substrate is then sectioned, or diced, to form multiple
MEMS devices. The individual devices are then packaged in the same manner as a
semiconductor die, such as, for example, on a lead frame, chip carrier, or other typical
package. The additional packaging associated with MEMS fabrication minimizes two
of the advantages that micromachined relays enjoy over conventional
electromechanical relays. First, the overall size of the device is increased, and second,
additional steps in the packaging process are incurred, which consequently increases
production costs. In addition, the substrate on which the micromachined relay is formed and the package in which it is housed are often made of similar materials,
which leads to duplicative processing steps and associated additional costs.
Furthermore, the additional packaging step results in an increased signal path length,
thereby increasing the response time, electrical resistance, and capacitance of the
relay.
Accordingly, there exists a need in the relevant art for the packaging of
micromachined devices such that the size of the package is decreased and which
reduces cost. There also exists a need in the relevant art to decrease the length of the
inputs to a micromachined device to minimize parasitic effects at higher frequencies.
BRIEF SUMMARY OF THE INVENTION
The present invention is directed to an apparatus including a substrate having
first and second surfaces. A micromachined device is integral with the first surface of
the substrate, and the second surface is an outer portion of the apparatus. The
apparatus also includes a cover connected to the substrate. The present invention is
also directed to a method of forming a micromachined device. The method includes
providing a substrate having first and second surfaces, fabricating the micromachined
device on the first surface of the substrate, and connecting a cover to the substrate
such that the micromachined device is enclosed by the cover and the second surface of
the substrate is not enclosed by the cover.
The present invention has the advantage that it has reduced production costs.
The present invention also has the advantage that the overall size of a micromachined
package can be made smaller. The present invention also has the advantage that the length of the leads of the device can be made small when compared to leads of
relevant art packages for micromachined devices, thus providing better electrical
performance, especially for high frequency applications. The present invention also
has the advantage that yield loss is decreased because less product is damaged as a
result of obviating additional packaging steps.
BRIEF DESCRIPTION OF THE DRAWINGS
For the present invention to be clearly understood and readily practiced, the
present invention will be described in conjunction with the following figures,
wherein:
Figure 1 is a cross-sectional view of an apparatus according to the present
invention; and
Figure 2 is a cross-sectional view of an apparatus according to another
embodiment of the present invention;
Figure 3 is a cross-sectional view of an apparatus according to another
embodiment of the present invention;
Figure 4 is a cross-sectional view of an apparatus according to another
embodiment of the present invention; and
Figure 5 is a perspective view of a substrate and a number of micromachined
devices of the apparatus of the present invention.
DETAILED DESCRIPTION OF THE INVENTION Fig. 1 is a cross-sectional view of an apparatus 10 according to the present
invention. The apparatus 10 includes a substrate 12, a micromachined device 14, and
a cover 16. The substrate 12 may be a non-conductive material, such as, for example,
ceramic, glass, silicon, a printed circuit board, or materials used for silicon-on-
insulator semiconductor devices. The micromachined device 14 is integrally formed
with a first surface 18 of the substrate 12, such as, for example, by batch
micromachining fabrication techniques, which include surface and bulk
micromachining. The micromachined device 14 may be, for example, a
micromachined relay, such as that described in U.S. Patent No. 5,847,631, issued to
Taylor et al. In addition, the micromachined device 14 may be an array of
micromachined relays, or it may be, for example, a valve, switch, actuator, sensor, or
motor. The cover 16 is connected to the substrate 12 and encloses the micromachined
device 14. The substrate 12 and the cover 16 form a housing, or package, for the
micromachined device 14, thus providing a micromachined device 14 that is integral
with its package.
An apparatus 10 constructed according to the present invention, in which the
micromachined device 14 is a micromachined relay, may be used in high frequency
applications, such as up to 20 GHz, and may be utilized in such applications as, for
example, automatic test equipment and cellular telephone equipment. In addition,
where the micromachined device 14 is a relay, the footprint of the apparatus 10 may
approach one millimeter by one millimeter.
The substrate 12 may define a number of holes extending from the first surface
18 of the substrate 12 to a second surface 20. The holes in the substrate 12 may be filled with electrically conductive material, such as metal or conductive polymers, to
form conductive vias 22. The conductive vias 22 may be formed by, for example,
thick film techniques (such as screen-printing of conductive paste) or doctor blading.
The conductive vias 22 may form a grid array and may be connected to conductive
balls 24, such as solder balls used in ball grid array (BGA) arrangements. The
conductive vias 22 and conductive balls 24 form a signal path between the
micromachined device 14 and the outside of the apparatus 10. Of course, the present
invention may be used with other types of packages, such as a pin grid array (PGA),
dual in-line package (DIP), small outline package (SOP), or small outline J-lead
package (SOJ). The BGA embodiment, however, has the advantage that the length of
the signal leads, provided directly through the conductive vias 22, are comparatively
shorter than in other packaging arrangements, thereby enhancing the overall
performance of the apparatus 10 at higher frequencies by reducing the parasitic
capacitance effects associated with longer signal lead lengths.
The cover 16 may be constructed of non-conductive material, such as plastic
or ceramic. The cover 16 may also be constructed of an electrically conductive
material, such as metal, to shield the micromachined device 14 from electromagnetic
interference. The cover 16 may be connected to the substrate 12, such as by epoxy
bonding. Fig. 2 is a cross-sectional view illustrating another embodiment of the
present invention. In the embodiment illustrated in Fig. 2, the cover 16 is formed
from two parts, a wall 30 and a lid 32. The wall 30 and lid 32 may be bonded
together, and the two-part cover 16 may bonded to the substrate 12. If the cover 16
and substrate 12 are both made of ceramic, both the micromachined device 14 and the cover 16 may be batch fabricated and bonded in batch to produce a hermetically
packaged apparatus 10.
The embodiments of Figs. 1 and 2 illustrate the cover 16 connected only to the
first surface 18 of the substrate 12. Fig. 3 is a cross-sectional view of the apparatus 10
illustrating another embodiment of the present invention. In the embodiment
illustrated in Fig. 3, the cover 16 includes a stepped lip 26. The stepped lip 26 may be
connected to both the first surface 18 and the sides 28 of the substrate 12, such that the
substrate 12 fits into the cover 16. For this embodiment, the cover 16 may be
connected to the substrate 12, for example, by epoxy bonding or by mechanical grip.
Fig. 4 is a cross-sectional view of the apparatus 10 according to another
embodiment of the invention. For the embodiment illustrated in Fig. 4, signals are
provided to and from the micromachined device 14 via a number of bond pads 40.
The bond pads 40 are connected to a number of pins 42, thus forming a signal path
between the micromachined device 14 and the outside of the apparatus 10. The pins
42 may be configured, for example, in a fashion similar to a dual in-line package, or
an SOJ package.
The present invention is also directed to a method of forming a
micromachined device 14. The method includes providing a substrate 12, fabricating
a micromachined device 14 on the substrate 12, such as by batch microfabrication
techniques. Examples of microfabrication techniques include surface micromachining
and bulk micromachining. A cover 16 is connected to the substrate 12, such as by
epoxy bonding, thus enclosing the micromachined device 14, such that the
micromachined device 14 is integrated with the package thereof. The method may include, prior to the fabrication of the micromachined device
14, forming holes extending through the substrate 12. Conductive vias 22 may be
formed therethrough by filling the holes, such as by screen printing or doctor blading,
with conductive material, such as metal or conductive polymers. The substrate 12 and
conductive vias 22 may be polished to a desired flatness. The micromachined device
14 may then formed on the substrate 12, as described hereinabove, such that leads to
the micromachined device 14 are connected to the conductive vias. The surface of the
substrate 12 on which the micromachined device 14 is formed may be larger in area
than the micromachined device 14, thus allowing for batch fabrication of the
integrated device 14. Fig. 5 is a perspective view of a substrate 12 having a number
of micromachined devices 14 formed thereon. After fabrication, a conductive
material, such as solder or other materials capable of reflow, may be placed on the
conductive vias 22. The substrate 12 may be cut, such as by a wafer or substrate saw,
into a number of individual devices 14, or an array of devices 14. A cover 16 may be
connected to the substrate 12 to enclose the micromachined device 14. Conductive
balls 24 may be connected to the conductive vias 22 adjacent the second surface 20 of
the substrate 12.
Those of ordinary skill in the art will recognize that many modifications and
variations of the present invention may be implemented. The foregoing description
and the following claims are intended to cover all such modifications and variations.
Furthermore, the materials and processes disclosed are illustrative, but are not
exhaustive. Other materials and processes may also be used to make devices embodying the present invention. In addition, the described sequences of the
processing may also be varied.

Claims

What is claimed is:
1. An apparatus, comprising:
a substrate having first and second surfaces and including a
micromachined device integral with said first surface, wherein said second
surface is an outer portion of the apparatus; and
a cover connected to said substrate and enclosing said micromachined
device.
2. The apparatus of claim 1, wherein said cover is connected to said first surface
of said substrate.
3. The apparatus of claim 1, wherein:
said substrate includes a side adjacent said first surface and said second
surface; and
said cover includes a stepped lip connected to said side of said
substrate.
4. The apparatus of claim 1, further comprising at least one conductive via
between said first surface and said second surface of said substrate and
connected to said micromachined device.
5. The apparatus of claim 4, wherein said conductive via is part of a grid array.
6. The apparatus of claim 5, further comprising at least one conductive ball
connected to said conductive via.
7. The apparatus of claim 1, further comprising:
a plurality of bond pads electrically connected to said micromachined
device; and
at least one pin electrically connected to said bond pads and external of
both said substrate and said cover.
8. The apparatus of claim 7, wherein said pins are mechanically connected to
both said substrate and said cover.
9. The apparatus of claim 7, wherein said pin forms a configuration selected from
the group consisting of dual in-line and small outline J-lead.
10. The apparatus of claim 1, wherein said micromachined device is selected from
the group consisting of a relay, an array of relays, a switch, a sensor, a valve, an
actuator, and a motor.
11. An apparatus, comprising:
a substrate having first and second surfaces and including a
micromachined device integral with said first surface, wherein said second
surface is an outer portion of the apparatus;
a cover connected to said substrate;
at least one conductive via between said first and second surfaces of
said substrate and connected to said micromachined device; and
at least one conductive ball connected to said conductive via adjacent
said second surface of said substrate.
12. The apparatus of claim 11, wherein said micromachined device is selected
from the group consisting of a relay, an array of relays, a switch, a sensor, a valve,
an actuator, and a motor.
13. A method of forming a micromachined device, comprising:
providing a substrate having a first surface and a second surface;
fabricating the micromachined device on the first surface of the
substrate; and
connecting a cover to the substrate such that the micromachined device
is enclosed by the cover and the second surface of the substrate is not enclosed
by the cover.
14. The method of claim 13, further comprising: forming at least one conductive via between the first and second
surfaces of the substrate; and
connecting the micromachined device to the via.
15. The method of claim 13 , further comprising:
providing a plurality of bond pads connected to the micromachined
device; and
connecting a plurality of pins to the bond pads.
16. The method of claim 14, further comprising connecting at least one conductive
ball to the conductive via adjacent the second surface of the substrate.
17. The method of claim 13, wherein:
fabricating a micromachined device includes fabricating a plurality of
micromachined devices on the first surface of said substrate; and
connecting a cover includes connecting a plurality of covers.
18. The method of claim 17, further comprising cutting the substrate into a
plurality of packaged micromachined devices.
19. The method of claim 13, wherein fabricating the micromachined device is
selected from the group consisting of surface micromachining and bulk
micromachining.
0. The method of claim 14, wherein forming at least one conductive via includes:
forming at least one hole extending between the first surface and the
second surface of the substrate; and
filling the hole with conductive material.
21. The method of claim 20, wherein filling the hole with conductive material is
selected from the group consisting of screen printing and doctor blading.
22. A method of forming a micromachined device, comprising:
fabricating a plurality of micromachined devices on a first surface of a
substrate, the substrate having a second surface;
cutting the substrate into a plurality of die, each die having a
micromachined device fabricated thereon; and
connecting a plurality of covers to the die to enclose the
micromachined devices.
23. The method of claim 22, further comprising:
forming a plurality of conductive vias between the first surface and the
second surface of the substrate; and
connecting the micromachined devices to the vias.
24. The method of claim 23, further comprising connecting a plurality of
conductive balls to the conductive vias.
25. The method of claim 22, wherein said fabricating includes fabricating a
plurality of devices selected from the group consisting of relays, arrays of
relays, actuators, sensors, motors, switches, and valves.
26. A method of forming a micromachined device, comprising:
fabricating a plurality of micromachined devices on a first surface of a
substrate, the substrate having a second surface;
forming a plurality of conductive vias between the first surface and the
second surface of the substrate;
connecting the micromachined devices to the vias;
connecting a plurality of covers to the substrate to enclose the
micromachined devices;
cutting the substrate into a plurality of packaged micromachined
devices; and connecting a plurality of conductive balls to the vias adjacent the
second surface of the substrate.
27. The method of claim 26, wherein said fabricating includes fabricating a
plurality of devices selected from the group consisting of relays, arrays of
relays, actuators, sensors, motors, switches, and valves.
28. A method of packaging a micromachined device, comprising:
providing a micromachined device on a first surface of a substrate;
connecting a cover to the substrate such that the micromachined device
is enclosed by the cover.
29. The method of claim 28, further comprising;
providing a signal path between the micromachined device and an
external connection.
30. The method of claim 29, wherein providing a signal path includes:
forming conductive vias between the first surface of the substrate and a
second surface of the substrate; and
connecting the micromachined device to the conductive via.
PCT/US2000/000670 1999-01-12 2000-01-11 Micromachined device and method of forming the micromachined device WO2000042636A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
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Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US22838899A 1999-01-12 1999-01-12
US09/228,388 1999-01-12

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WO2000042636A9 WO2000042636A9 (en) 2001-08-23

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