WO2000041223A1 - Heating device for heating semiconductor wafers in thermal processing chambers - Google Patents
Heating device for heating semiconductor wafers in thermal processing chambers Download PDFInfo
- Publication number
- WO2000041223A1 WO2000041223A1 PCT/US2000/000228 US0000228W WO0041223A1 WO 2000041223 A1 WO2000041223 A1 WO 2000041223A1 US 0000228 W US0000228 W US 0000228W WO 0041223 A1 WO0041223 A1 WO 0041223A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- light energy
- energy sources
- semiconductor wafer
- wafer
- emitted
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B17/00—Furnaces of a kind not covered by any preceding group
- F27B17/0016—Chamber type furnaces
- F27B17/0025—Especially adapted for treating semiconductor wafers
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B5/00—Muffle furnaces; Retort furnaces; Other furnaces in which the charge is held completely isolated
- F27B5/04—Muffle furnaces; Retort furnaces; Other furnaces in which the charge is held completely isolated adapted for treating the charge in vacuum or special atmosphere
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B5/00—Muffle furnaces; Retort furnaces; Other furnaces in which the charge is held completely isolated
- F27B5/06—Details, accessories, or equipment peculiar to furnaces of these types
- F27B5/14—Arrangements of heating devices
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D19/00—Arrangements of controlling devices
Landscapes
- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP00901398A EP1141999A1 (en) | 1999-01-06 | 2000-01-06 | Heating device for heating semiconductor wafers in thermal processing chambers |
AU22246/00A AU2224600A (en) | 1999-01-06 | 2000-01-06 | Heating device for heating semiconductor wafers in thermal processing chambers |
JP2000592867A JP2002534803A (en) | 1999-01-06 | 2000-01-06 | Heating device for heating semiconductor wafer in heat treatment chamber |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/226,396 | 1999-01-06 | ||
US09/226,396 US6771895B2 (en) | 1999-01-06 | 1999-01-06 | Heating device for heating semiconductor wafers in thermal processing chambers |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2000041223A1 true WO2000041223A1 (en) | 2000-07-13 |
Family
ID=22848749
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2000/000228 WO2000041223A1 (en) | 1999-01-06 | 2000-01-06 | Heating device for heating semiconductor wafers in thermal processing chambers |
Country Status (7)
Country | Link |
---|---|
US (5) | US6771895B2 (en) |
EP (1) | EP1141999A1 (en) |
JP (1) | JP2002534803A (en) |
KR (1) | KR100729006B1 (en) |
AU (1) | AU2224600A (en) |
TW (1) | TW504728B (en) |
WO (1) | WO2000041223A1 (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2001031689A1 (en) * | 1999-10-28 | 2001-05-03 | Steag Rtp Systems Gmbh | Method and device for thermal treatment of substrates |
WO2002050875A2 (en) * | 2000-12-21 | 2002-06-27 | Mattson Thermal Products Inc. | Heating configuration for use in thermal processing chambers |
US8222570B2 (en) | 2000-12-21 | 2012-07-17 | Mattson Technology, Inc. | System and process for heating semiconductor wafers by optimizing absorption of electromagnetic energy |
EP4138121A1 (en) * | 2015-10-09 | 2023-02-22 | Applied Materials, Inc. | Diode laser for wafer heating for epi processes |
Families Citing this family (73)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1142001B1 (en) * | 1998-11-20 | 2007-10-03 | Steag RTP Systems, Inc. | Fast heating and cooling apparatus for semiconductor wafers |
US6594446B2 (en) * | 2000-12-04 | 2003-07-15 | Vortek Industries Ltd. | Heat-treating methods and systems |
US6902622B2 (en) | 2001-04-12 | 2005-06-07 | Mattson Technology, Inc. | Systems and methods for epitaxially depositing films on a semiconductor substrate |
US7734439B2 (en) | 2002-06-24 | 2010-06-08 | Mattson Technology, Inc. | System and process for calibrating pyrometers in thermal processing chambers |
US7101812B2 (en) | 2002-09-20 | 2006-09-05 | Mattson Technology, Inc. | Method of forming and/or modifying a dielectric film on a semiconductor surface |
US7046025B2 (en) * | 2002-10-02 | 2006-05-16 | Suss Microtec Testsystems Gmbh | Test apparatus for testing substrates at low temperatures |
US6835914B2 (en) * | 2002-11-05 | 2004-12-28 | Mattson Technology, Inc. | Apparatus and method for reducing stray light in substrate processing chambers |
WO2004057650A1 (en) * | 2002-12-20 | 2004-07-08 | Mattson Technology Canada, Inc. | Methods and systems for supporting a workpiece and for heat-treating the workpiece |
US7654596B2 (en) | 2003-06-27 | 2010-02-02 | Mattson Technology, Inc. | Endeffectors for handling semiconductor wafers |
US20050189329A1 (en) * | 2003-09-02 | 2005-09-01 | Somit Talwar | Laser thermal processing with laser diode radiation |
US6862404B1 (en) * | 2003-09-08 | 2005-03-01 | Wafermasters | Focused photon energy heating chamber |
US20080090309A1 (en) * | 2003-10-27 | 2008-04-17 | Ranish Joseph M | Controlled annealing method |
US20070179677A1 (en) * | 2003-11-25 | 2007-08-02 | Polymer Innovation, Llc | Self contained bench top enclosure temperature control system |
US7645356B2 (en) * | 2003-11-25 | 2010-01-12 | International Business Machines Corporation | Method of processing wafers with resonant heating |
JP4024764B2 (en) * | 2004-01-20 | 2007-12-19 | 松下電器産業株式会社 | Light irradiation heat treatment method and light irradiation heat treatment apparatus |
US7109443B2 (en) * | 2004-03-26 | 2006-09-19 | Intel Corporation | Multi-zone reflecting device for use in flash lamp processes |
US7283734B2 (en) * | 2004-08-24 | 2007-10-16 | Fujitsu Limited | Rapid thermal processing apparatus and method of manufacture of semiconductor device |
US20060096951A1 (en) * | 2004-10-29 | 2006-05-11 | International Business Machines Corporation | Apparatus and method for controlling process non-uniformity |
DE102004060557A1 (en) * | 2004-12-16 | 2006-06-29 | Forschungszentrum Rossendorf E.V. | Flash lamp mirror arrangement |
DE102005010005A1 (en) * | 2005-03-04 | 2006-12-28 | Nunner, Dieter | Apparatus and method for coating small parts |
CN101258387A (en) * | 2005-07-05 | 2008-09-03 | 马特森技术公司 | Method and system for determining optical properties of semiconductor wafers |
JP5294862B2 (en) * | 2005-09-14 | 2013-09-18 | マトソン テクノロジー、インコーポレイテッド | Repeatable heat treatment method and equipment |
US7184657B1 (en) | 2005-09-17 | 2007-02-27 | Mattson Technology, Inc. | Enhanced rapid thermal processing apparatus and method |
JP2007095889A (en) * | 2005-09-28 | 2007-04-12 | Ushio Inc | Light irradiation heating method |
JP5168788B2 (en) * | 2006-01-23 | 2013-03-27 | 信越半導体株式会社 | Manufacturing method of SOI wafer |
US7543981B2 (en) | 2006-06-29 | 2009-06-09 | Mattson Technology, Inc. | Methods for determining wafer temperature |
US7976634B2 (en) * | 2006-11-21 | 2011-07-12 | Applied Materials, Inc. | Independent radiant gas preheating for precursor disassociation control and gas reaction kinetics in low temperature CVD systems |
US9536728B2 (en) * | 2007-02-15 | 2017-01-03 | Applied Material, Inc. | Lamp for rapid thermal processing chamber |
WO2008131513A1 (en) | 2007-05-01 | 2008-11-06 | Mattson Technology Canada, Inc. | Irradiance pulse heat-treating methods and apparatus |
DE102007058002B4 (en) * | 2007-12-03 | 2016-03-17 | Mattson Thermal Products Gmbh | Device for the thermal treatment of disc-shaped semiconductor substrates |
US7976216B2 (en) | 2007-12-20 | 2011-07-12 | Mattson Technology, Inc. | Determining the temperature of silicon at high temperatures |
US8314368B2 (en) * | 2008-02-22 | 2012-11-20 | Applied Materials, Inc. | Silver reflectors for semiconductor processing chambers |
KR101610269B1 (en) | 2008-05-16 | 2016-04-07 | 맷슨 테크놀로지, 인크. | Workpiece breakage prevention method and apparatus |
JP5611212B2 (en) * | 2008-09-17 | 2014-10-22 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | Control of heat during substrate annealing |
US8314369B2 (en) * | 2008-09-17 | 2012-11-20 | Applied Materials, Inc. | Managing thermal budget in annealing of substrates |
US20100068898A1 (en) * | 2008-09-17 | 2010-03-18 | Stephen Moffatt | Managing thermal budget in annealing of substrates |
KR101031226B1 (en) | 2009-08-21 | 2011-04-29 | 에이피시스템 주식회사 | Heater block of rapid thermal processing apparatus |
JP5519329B2 (en) * | 2010-02-26 | 2014-06-11 | 東京エレクトロン株式会社 | Method for heating parts in processing chamber of semiconductor manufacturing apparatus and semiconductor manufacturing apparatus |
US20120181265A1 (en) * | 2010-07-15 | 2012-07-19 | Despatch Industries Limited Partnership | Firing furnace configuration for thermal processing system |
TWI435391B (en) | 2010-09-16 | 2014-04-21 | Dainippon Screen Mfg | Flash lamp annealer |
WO2012048419A1 (en) | 2010-10-15 | 2012-04-19 | Mattson Technology Canada, Inc. | Methods, apparatus and media for determining a shape of an irradiance pulse to which a workpiece is to be exposed |
DE102011116243B4 (en) * | 2011-10-17 | 2014-04-17 | Centrotherm Photovoltaics Ag | Device for determining the temperature of a substrate |
JP5964626B2 (en) * | 2012-03-22 | 2016-08-03 | 株式会社Screenホールディングス | Heat treatment equipment |
KR101368818B1 (en) * | 2012-05-03 | 2014-03-04 | 에이피시스템 주식회사 | Apparatus for substrate treatment |
US9113501B2 (en) | 2012-05-25 | 2015-08-18 | Watlow Electric Manufacturing Company | Variable pitch resistance coil heater |
WO2013181263A1 (en) * | 2012-05-30 | 2013-12-05 | Applied Materials, Inc. | Apparatus and methods for rapid thermal processing |
KR101503117B1 (en) * | 2012-08-31 | 2015-03-16 | 엘지디스플레이 주식회사 | Curing apparatus |
US20140270731A1 (en) * | 2013-03-12 | 2014-09-18 | Applied Materials, Inc. | Thermal management apparatus for solid state light source arrays |
KR101572662B1 (en) * | 2013-12-18 | 2015-11-27 | 에이피시스템 주식회사 | Apparatus for processing substrate |
EP3095128B1 (en) | 2014-01-17 | 2023-11-22 | TRUMPF Photonic Components GmbH | Heating system comprising semiconductor light sources |
KR102343226B1 (en) | 2014-09-04 | 2021-12-23 | 삼성전자주식회사 | Spot heater and Device for cleaning wafer using the same |
TWI686100B (en) * | 2014-11-28 | 2020-02-21 | 日商日本碍子股份有限公司 | Infrared heater and infrared processing device |
KR20170109599A (en) | 2015-01-30 | 2017-09-29 | 어플라이드 머티어리얼스, 인코포레이티드 | Lamp heating for process chambers |
CN107851580B (en) | 2015-07-29 | 2022-10-18 | 应用材料公司 | Laser annealing of rotating substrates |
US10932323B2 (en) * | 2015-08-03 | 2021-02-23 | Alta Devices, Inc. | Reflector and susceptor assembly for chemical vapor deposition reactor |
KR102104468B1 (en) * | 2015-12-30 | 2020-04-27 | 맷슨 테크놀로지, 인크. | Methods for improving process uniformity in millisecond annealing systems |
US20170194133A1 (en) * | 2015-12-30 | 2017-07-06 | Mattson Technology, Inc. | Electrode Tip for ARC Lamp |
US10727094B2 (en) * | 2016-01-29 | 2020-07-28 | Taiwan Semiconductor Manufacturing Co., Ltd | Thermal reflector device for semiconductor fabrication tool |
DE102017109812A1 (en) | 2016-05-13 | 2017-11-16 | Osram Opto Semiconductors Gmbh | Light-emitting semiconductor chip and method for producing a light-emitting semiconductor chip |
DE102017109809B4 (en) | 2016-05-13 | 2024-01-18 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Method for producing a semiconductor chip |
DE102017108949B4 (en) | 2016-05-13 | 2021-08-26 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Semiconductor chip |
JP6736386B2 (en) * | 2016-07-01 | 2020-08-05 | 東京エレクトロン株式会社 | Substrate liquid processing apparatus, substrate liquid processing method and recording medium |
EP3488464B1 (en) * | 2016-07-22 | 2021-09-08 | Applied Materials, Inc. | Heating modulators to improve epi uniformity tuning |
DE102016119703A1 (en) * | 2016-10-17 | 2018-04-19 | Kraussmaffei Technologies Gmbh | Method and device for producing molded parts with a semi-finished product |
JP7191504B2 (en) * | 2017-07-14 | 2022-12-19 | 株式会社Screenホールディングス | Heat treatment equipment |
JP2019021828A (en) * | 2017-07-20 | 2019-02-07 | 株式会社Screenホールディングス | Thermal treatment apparatus |
CN108287574A (en) * | 2018-03-29 | 2018-07-17 | 北京创昱科技有限公司 | Temperature-adjusting device and wafer vacuum heating device |
US11162845B2 (en) * | 2018-06-26 | 2021-11-02 | Applied Materials, Inc. | Method and apparatus for measuring temperature |
KR20210025702A (en) * | 2018-08-03 | 2021-03-09 | 어플라이드 머티어리얼스, 인코포레이티드 | Multi-zone lamp control and individual lamp control at the lamp head |
CN111564532B (en) * | 2020-04-03 | 2023-02-17 | 江西昌大高新能源材料技术有限公司 | Post-treatment efficiency-increasing equipment and method for HAC solar cell |
CN111725114B (en) * | 2020-06-30 | 2023-07-14 | 北京北方华创微电子装备有限公司 | Position correction device for heating lamp |
US11430671B2 (en) * | 2020-07-30 | 2022-08-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Ozone wafer cleaning module having an ultraviolet lamp module with rotatable reflectors |
KR20240039263A (en) * | 2022-09-19 | 2024-03-26 | 에이피시스템 주식회사 | Heater block and apparatus for heating substrate having the same |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4975561A (en) * | 1987-06-18 | 1990-12-04 | Epsilon Technology Inc. | Heating system for substrates |
US4981815A (en) * | 1988-05-09 | 1991-01-01 | Siemens Aktiengesellschaft | Method for rapidly thermally processing a semiconductor wafer by irradiation using semicircular or parabolic reflectors |
EP0476307A1 (en) * | 1990-08-16 | 1992-03-25 | Applied Materials, Inc. | Apparatus and method for substrate heating in semiconductor processes |
EP0576791A1 (en) | 1992-04-16 | 1994-01-05 | Texas Instruments Incorporated | Multi-zone illuminator with embedded process control sensors |
US5345534A (en) * | 1993-03-29 | 1994-09-06 | Texas Instruments Incorporated | Semiconductor wafer heater with infrared lamp module with light blocking means |
DE4306398A1 (en) * | 1993-03-02 | 1994-09-08 | Leybold Ag | Device for heating a substrate |
US5446825A (en) | 1991-04-24 | 1995-08-29 | Texas Instruments Incorporated | High performance multi-zone illuminator module for semiconductor wafer processing |
US5930456A (en) * | 1998-05-14 | 1999-07-27 | Ag Associates | Heating device for semiconductor wafers |
Family Cites Families (210)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US447718A (en) * | 1891-03-03 | Car-coupling | ||
US622990A (en) * | 1899-04-11 | Harold boyd | ||
US640224A (en) * | 1898-12-16 | 1900-01-02 | Andrew Crozer Reeves | Compound steam-engine. |
US2497676A (en) * | 1946-03-27 | 1950-02-14 | Ralph W Lashells | Infrared ray equipment |
US3623712A (en) | 1969-10-15 | 1971-11-30 | Applied Materials Tech | Epitaxial radiation heated reactor and process |
US3761678A (en) | 1971-05-03 | 1973-09-25 | Aerojet General Co | High density spherical modules |
US3796182A (en) | 1971-12-16 | 1974-03-12 | Applied Materials Tech | Susceptor structure for chemical vapor deposition reactor |
US3730194A (en) * | 1972-01-24 | 1973-05-01 | M Shoner | Methods of and compositions for stripping rubber articles adhered to a substrate |
US3862397A (en) | 1972-03-24 | 1975-01-21 | Applied Materials Tech | Cool wall radiantly heated reactor |
US3830194A (en) | 1972-09-28 | 1974-08-20 | Applied Materials Tech | Susceptor support structure and docking assembly |
US3836751A (en) | 1973-07-26 | 1974-09-17 | Applied Materials Inc | Temperature controlled profiling heater |
US4047496A (en) | 1974-05-31 | 1977-09-13 | Applied Materials, Inc. | Epitaxial radiation heated reactor |
US4081313A (en) | 1975-01-24 | 1978-03-28 | Applied Materials, Inc. | Process for preparing semiconductor wafers with substantially no crystallographic slip |
US4001047A (en) | 1975-05-19 | 1977-01-04 | General Electric Company | Temperature gradient zone melting utilizing infrared radiation |
US4041278A (en) | 1975-05-19 | 1977-08-09 | General Electric Company | Heating apparatus for temperature gradient zone melting |
US4048955A (en) | 1975-09-02 | 1977-09-20 | Texas Instruments Incorporated | Continuous chemical vapor deposition reactor |
US4115163A (en) | 1976-01-08 | 1978-09-19 | Yulia Ivanovna Gorina | Method of growing epitaxial semiconductor films utilizing radiant heating |
US4097226A (en) | 1976-10-26 | 1978-06-27 | General Electric Company | Furnace for practising temperature gradient zone melting |
US4101759A (en) * | 1976-10-26 | 1978-07-18 | General Electric Company | Semiconductor body heater |
JPS53135037A (en) | 1977-04-28 | 1978-11-25 | Nichiden Kikai Kk | Heating apparatus |
US4224504A (en) | 1978-06-21 | 1980-09-23 | General Electric Company | Apparatus for practicing temperature gradient zone melting |
US4221956A (en) | 1978-06-21 | 1980-09-09 | General Electric Company | Apparatus for practising temperature gradient zone melting |
JPS5750427A (en) | 1980-09-12 | 1982-03-24 | Ushio Inc | Annealing device and annealing method |
GB2089840B (en) | 1980-12-20 | 1983-12-14 | Cambridge Instr Ltd | Chemical vapour deposition apparatus incorporating radiant heat source for substrate |
US4389970A (en) | 1981-03-16 | 1983-06-28 | Energy Conversion Devices, Inc. | Apparatus for regulating substrate temperature in a continuous plasma deposition process |
US4517448A (en) | 1981-03-23 | 1985-05-14 | Radiant Technology Corporation | Infrared furnace with atmosphere control capability |
US4434189A (en) * | 1982-03-15 | 1984-02-28 | The United States Of America As Represented By The Adminstrator Of The National Aeronautics And Space Administration | Method and apparatus for coating substrates using a laser |
JPS58158914A (en) | 1982-03-16 | 1983-09-21 | Semiconductor Res Found | Semiconductor manufacturing device |
US4436985A (en) | 1982-05-03 | 1984-03-13 | Gca Corporation | Apparatus for heat treating semiconductor wafers |
JPS59928A (en) | 1982-06-25 | 1984-01-06 | Ushio Inc | Photo heating device |
US4470369A (en) | 1982-07-12 | 1984-09-11 | Energy Conversion Devices, Inc. | Apparatus for uniformly heating a substrate |
US4545327A (en) | 1982-08-27 | 1985-10-08 | Anicon, Inc. | Chemical vapor deposition apparatus |
JPS5938584A (en) | 1982-08-30 | 1984-03-02 | ウシオ電機株式会社 | Method of operating irradiating heating furnace |
FR2532783A1 (en) | 1982-09-07 | 1984-03-09 | Vu Duy Phach | THERMAL PROCESSING MACHINE FOR SEMICONDUCTORS |
US4582720A (en) | 1982-09-20 | 1986-04-15 | Semiconductor Energy Laboratory Co., Ltd. | Method and apparatus for forming non-single-crystal layer |
JPS5977289A (en) | 1982-10-26 | 1984-05-02 | ウシオ電機株式会社 | Beam irradiating furnace |
US4543472A (en) | 1982-11-03 | 1985-09-24 | Ushio Denki Kabushiki Kaisha | Plane light source unit and radiant heating furnace including same |
US4428647A (en) | 1982-11-04 | 1984-01-31 | Xerox Corporation | Multi-beam optical system using lens array |
US4477718A (en) | 1983-01-10 | 1984-10-16 | Radiant Technology Corporation | Infrared furnace with controlled environment |
US4511788A (en) | 1983-02-09 | 1985-04-16 | Ushio Denki Kabushiki Kaisha | Light-radiant heating furnace |
JPS59169125A (en) | 1983-03-16 | 1984-09-25 | Ushio Inc | Method for heating semiconductor wafer |
GB2136937A (en) | 1983-03-18 | 1984-09-26 | Philips Electronic Associated | A furnace for rapidly heating semiconductor bodies |
JPS59193024A (en) | 1983-03-29 | 1984-11-01 | Ushio Inc | Flash irradiation device |
GB8318457D0 (en) | 1983-07-07 | 1983-08-10 | Thorn Emi Domestic Appliances | Heating apparatus |
US4496828A (en) | 1983-07-08 | 1985-01-29 | Ultra Carbon Corporation | Susceptor assembly |
US4504730A (en) | 1983-10-04 | 1985-03-12 | Ushio Denki Kabushiki Kaisha | Method for heating semiconductor wafer by means of application of radiated light |
US5259881A (en) | 1991-05-17 | 1993-11-09 | Materials Research Corporation | Wafer processing cluster tool batch preheating and degassing apparatus |
US4649261A (en) | 1984-02-28 | 1987-03-10 | Tamarack Scientific Co., Inc. | Apparatus for heating semiconductor wafers in order to achieve annealing, silicide formation, reflow of glass passivation layers, etc. |
US4698486A (en) | 1984-02-28 | 1987-10-06 | Tamarack Scientific Co., Inc. | Method of heating semiconductor wafers in order to achieve annealing, silicide formation, reflow of glass passivation layers, etc. |
US4544418A (en) | 1984-04-16 | 1985-10-01 | Gibbons James F | Process for high temperature surface reactions in semiconductor material |
JPH0766910B2 (en) | 1984-07-26 | 1995-07-19 | 新技術事業団 | Semiconductor single crystal growth equipment |
US4615294A (en) | 1984-07-31 | 1986-10-07 | Hughes Aircraft Company | Barrel reactor and method for photochemical vapor deposition |
US4811684A (en) | 1984-11-26 | 1989-03-14 | Semiconductor Energy Laboratory Co., Ltd. | Photo CVD apparatus, with deposition prevention in light source chamber |
JPS61196515A (en) | 1985-02-26 | 1986-08-30 | Mitsubishi Electric Corp | Band-fusion type semiconductor manufacturing equipment |
US4653428A (en) | 1985-05-10 | 1987-03-31 | General Electric Company | Selective chemical vapor deposition apparatus |
US4680451A (en) | 1985-07-29 | 1987-07-14 | A. G. Associates | Apparatus using high intensity CW lamps for improved heat treating of semiconductor wafers |
US4632056A (en) | 1985-08-05 | 1986-12-30 | Stitz Robert W | CVD temperature control |
US4640224A (en) | 1985-08-05 | 1987-02-03 | Spectrum Cvd, Inc. | CVD heat source |
US4632057A (en) | 1985-08-05 | 1986-12-30 | Spectrum Cvd, Inc. | CVD plasma reactor |
US4607591A (en) | 1985-08-06 | 1986-08-26 | Spectrum Cvd, Inc. | CVD heater control circuit |
USRE33274E (en) | 1985-09-13 | 1990-07-24 | Xerox Corporation | Selective disordering of well structures by laser annealing |
US4654509A (en) | 1985-10-07 | 1987-03-31 | Epsilon Limited Partnership | Method and apparatus for substrate heating in an axially symmetric epitaxial deposition apparatus |
US4789771A (en) | 1985-10-07 | 1988-12-06 | Epsilon Limited Partnership | Method and apparatus for substrate heating in an axially symmetric epitaxial deposition apparatus |
KR910002596B1 (en) | 1985-11-21 | 1991-04-27 | 다이닛뽕 스크린 세이조오 가부시기가이샤 | Method and apparatus for controlling the temperature of a radiantly heated object |
US4796562A (en) | 1985-12-03 | 1989-01-10 | Varian Associates, Inc. | Rapid thermal cvd apparatus |
US5366554A (en) | 1986-01-14 | 1994-11-22 | Canon Kabushiki Kaisha | Device for forming a deposited film |
FR2594529B1 (en) | 1986-02-19 | 1990-01-26 | Bertin & Cie | APPARATUS FOR HEAT TREATMENT OF THIN PARTS, SUCH AS SILICON WAFERS |
JPH0830273B2 (en) | 1986-07-10 | 1996-03-27 | 株式会社東芝 | Thin film forming method and apparatus |
US5244501A (en) | 1986-07-26 | 1993-09-14 | Nihon Shinku Gijutsu Kabushiki Kaisha | Apparatus for chemical vapor deposition |
EP0255454A3 (en) | 1986-07-26 | 1991-11-21 | Nihon Shinku Gijutsu Kabushiki Kaisha | Apparatus for chemical vapor deposition |
US4859832A (en) | 1986-09-08 | 1989-08-22 | Nikon Corporation | Light radiation apparatus |
JPH0772351B2 (en) | 1986-12-01 | 1995-08-02 | 株式会社日立製作所 | Metal thin film selective growth method |
US5000113A (en) | 1986-12-19 | 1991-03-19 | Applied Materials, Inc. | Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process |
US4919077A (en) | 1986-12-27 | 1990-04-24 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor producing apparatus |
US4820906A (en) | 1987-03-13 | 1989-04-11 | Peak Systems, Inc. | Long arc lamp for semiconductor heating |
US4755654A (en) * | 1987-03-26 | 1988-07-05 | Crowley John L | Semiconductor wafer heating chamber |
US4913929A (en) | 1987-04-21 | 1990-04-03 | The Board Of Trustees Of The Leland Stanford Junior University | Thermal/microwave remote plasma multiprocessing reactor and method of use |
US4823735A (en) * | 1987-05-12 | 1989-04-25 | Gemini Research, Inc. | Reflector apparatus for chemical vapor deposition reactors |
US4836138A (en) | 1987-06-18 | 1989-06-06 | Epsilon Technology, Inc. | Heating system for reaction chamber of chemical vapor deposition equipment |
US4832779A (en) | 1987-07-16 | 1989-05-23 | Texas Instruments Incorporated | Processing apparatus |
US4830700A (en) | 1987-07-16 | 1989-05-16 | Texas Instruments Incorporated | Processing apparatus and method |
US4832777A (en) | 1987-07-16 | 1989-05-23 | Texas Instruments Incorporated | Processing apparatus and method |
US4832778A (en) | 1987-07-16 | 1989-05-23 | Texas Instruments Inc. | Processing apparatus for wafers |
US4820377A (en) | 1987-07-16 | 1989-04-11 | Texas Instruments Incorporated | Method for cleanup processing chamber and vacuum process module |
US4911103A (en) | 1987-07-17 | 1990-03-27 | Texas Instruments Incorporated | Processing apparatus and method |
US4854263B1 (en) | 1987-08-14 | 1997-06-17 | Applied Materials Inc | Inlet manifold and methods for increasing gas dissociation and for PECVD of dielectric films |
US4766288A (en) | 1987-08-17 | 1988-08-23 | Xerox Corporation | Flash fusing reflector cavity |
FR2620519B1 (en) | 1987-09-14 | 1990-01-19 | Lefevere Jules | ELECTRIC HEATER |
DE3871044D1 (en) | 1987-09-16 | 1992-06-17 | Siemens Ag | ARRANGEMENT FOR CARRYING OUT A CURING PROCESS ON A SEMICONDUCTOR DISC AND METHOD FOR CURING A SEMICONDUCTOR DISC. |
JPH0623935B2 (en) | 1988-02-09 | 1994-03-30 | 大日本スクリーン製造株式会社 | Heat treatment control method with improved reproducibility |
DE3807302A1 (en) | 1988-03-05 | 1989-09-14 | Dornier Gmbh | MIRROR STOVE |
US5188458A (en) * | 1988-04-27 | 1993-02-23 | A G Processing Technologies, Inc. | Pyrometer apparatus and method |
KR0155545B1 (en) | 1988-06-27 | 1998-12-01 | 고다까 토시오 | Apparatus for heat-treating a substrate |
US4985281A (en) | 1988-08-22 | 1991-01-15 | Santa Barbara Research Center | Elemental mercury source for metal-organic chemical vapor deposition |
US4901670A (en) | 1988-08-22 | 1990-02-20 | Santa Barbara Research Center | Elemental mercury source for metal-organic chemical vapor deposition |
US4956538A (en) | 1988-09-09 | 1990-09-11 | Texas Instruments, Incorporated | Method and apparatus for real-time wafer temperature measurement using infrared pyrometry in advanced lamp-heated rapid thermal processors |
US5876550A (en) * | 1988-10-05 | 1999-03-02 | Helisys, Inc. | Laminated object manufacturing apparatus and method |
US5637175A (en) * | 1988-10-05 | 1997-06-10 | Helisys Corporation | Apparatus for forming an integral object from laminations |
US4908495A (en) | 1988-12-20 | 1990-03-13 | Texas Instruments Incorporated | Heating lamp assembly for ccvd reactors |
JP2892070B2 (en) | 1989-01-26 | 1999-05-17 | キヤノン株式会社 | Deposition film forming equipment |
US5160545A (en) | 1989-02-03 | 1992-11-03 | Applied Materials, Inc. | Method and apparatus for epitaxial deposition |
US5053247A (en) | 1989-02-28 | 1991-10-01 | Moore Epitaxial, Inc. | Method for increasing the batch size of a barrel epitaxial reactor and reactor produced thereby |
US5207835A (en) | 1989-02-28 | 1993-05-04 | Moore Epitaxial, Inc. | High capacity epitaxial reactor |
US4920918A (en) | 1989-04-18 | 1990-05-01 | Applied Materials, Inc. | Pressure-resistant thermal reactor system for semiconductor processing |
US5194401A (en) | 1989-04-18 | 1993-03-16 | Applied Materials, Inc. | Thermally processing semiconductor wafers at non-ambient pressures |
US5011794A (en) | 1989-05-01 | 1991-04-30 | At&T Bell Laboratories | Procedure for rapid thermal annealing of implanted semiconductors |
US5156820A (en) | 1989-05-15 | 1992-10-20 | Rapro Technology, Inc. | Reaction chamber with controlled radiant energy heating and distributed reactant flow |
US5155337A (en) | 1989-12-21 | 1992-10-13 | North Carolina State University | Method and apparatus for controlling rapid thermal processing systems |
US5155336A (en) | 1990-01-19 | 1992-10-13 | Applied Materials, Inc. | Rapid thermal heating apparatus and method |
US5252366A (en) | 1990-01-24 | 1993-10-12 | The United States Of America As Represented By The Secretary Of The Air Force | Chemical vapor deposition method using an actively cooled effuser to coat a substrate having a heated surface layer |
US5129360A (en) | 1990-01-24 | 1992-07-14 | The United States Of America As Represented By The Secretary Of The Air Force | Actively cooled effusion cell for chemical vapor deposition |
US5108792A (en) | 1990-03-09 | 1992-04-28 | Applied Materials, Inc. | Double-dome reactor for semiconductor processing |
US5073698A (en) | 1990-03-23 | 1991-12-17 | Peak Systems, Inc. | Method for selectively heating a film on a substrate |
US5047611A (en) | 1990-03-23 | 1991-09-10 | Peak Systems, Inc. | Method for selectively curing a film on a substrate |
KR940011708B1 (en) | 1990-04-09 | 1994-12-23 | 니찌덴 아네루바 가부시끼가이샤 | Temperature control device for semiconductor wafer |
US5154512A (en) | 1990-04-10 | 1992-10-13 | Luxtron Corporation | Non-contact techniques for measuring temperature or radiation-heated objects |
JPH0482215A (en) | 1990-07-25 | 1992-03-16 | Sumitomo Electric Ind Ltd | Lamp annealing equipment |
US5044943A (en) | 1990-08-16 | 1991-09-03 | Applied Materials, Inc. | Spoked susceptor support for enhanced thermal uniformity of susceptor in semiconductor wafer processing apparatus |
US5269847A (en) | 1990-08-23 | 1993-12-14 | Applied Materials, Inc. | Variable rate distribution gas flow reaction chamber |
US5085887A (en) | 1990-09-07 | 1992-02-04 | Applied Materials, Inc. | Wafer reactor vessel window with pressure-thermal compensation |
JP2780866B2 (en) | 1990-10-11 | 1998-07-30 | 大日本スクリーン製造 株式会社 | Light irradiation heating substrate temperature measurement device |
US5148714A (en) | 1990-10-24 | 1992-09-22 | Ag Processing Technology, Inc. | Rotary/linear actuator for closed chamber, and reaction chamber utilizing same |
US5252132A (en) | 1990-11-22 | 1993-10-12 | Mitsubishi Denki Kabushiki Kaisha | Apparatus for producing semiconductor film |
JPH0812847B2 (en) | 1991-04-22 | 1996-02-07 | 株式会社半導体プロセス研究所 | Semiconductor manufacturing apparatus and semiconductor device manufacturing method |
JP3213338B2 (en) * | 1991-05-15 | 2001-10-02 | 株式会社リコー | Manufacturing method of thin film semiconductor device |
US5436172A (en) | 1991-05-20 | 1995-07-25 | Texas Instruments Incorporated | Real-time multi-zone semiconductor wafer temperature and process uniformity control system |
JPH04370924A (en) | 1991-06-20 | 1992-12-24 | Fujitsu Ltd | Cvd device |
JP3096743B2 (en) | 1991-06-28 | 2000-10-10 | 光洋精工株式会社 | Lamp annealing furnace temperature controller |
US5446824A (en) | 1991-10-11 | 1995-08-29 | Texas Instruments | Lamp-heated chuck for uniform wafer processing |
US5332442A (en) | 1991-11-15 | 1994-07-26 | Tokyo Electron Kabushiki Kaisha | Surface processing apparatus |
US5215588A (en) | 1992-01-17 | 1993-06-01 | Amtech Systems, Inc. | Photo-CVD system |
JPH05243166A (en) | 1992-02-26 | 1993-09-21 | Nec Corp | Semiconductor substrate vapor growth device |
JP2888026B2 (en) | 1992-04-30 | 1999-05-10 | 松下電器産業株式会社 | Plasma CVD equipment |
US5534072A (en) | 1992-06-24 | 1996-07-09 | Anelva Corporation | Integrated module multi-chamber CVD processing system and its method for processing subtrates |
JP3154197B2 (en) | 1992-06-29 | 2001-04-09 | ソニー株式会社 | Film forming equipment |
US5445675A (en) | 1992-07-09 | 1995-08-29 | Tel-Varian Limited | Semiconductor processing apparatus |
JP3604706B2 (en) | 1992-07-23 | 2004-12-22 | キヤノン株式会社 | Film formation method |
US5449883A (en) | 1992-08-07 | 1995-09-12 | Mitsubishi Materials Corporation | Continuous heat treatment system of semiconductor wafers for eliminating thermal donor |
US5288364A (en) | 1992-08-20 | 1994-02-22 | Motorola, Inc. | Silicon epitaxial reactor and control method |
US5271963A (en) | 1992-11-16 | 1993-12-21 | Materials Research Corporation | Elimination of low temperature ammonia salt in TiCl4 NH3 CVD reaction |
JP3115134B2 (en) | 1992-11-27 | 2000-12-04 | 松下電器産業株式会社 | Thin film processing apparatus and thin film processing method |
US5418885A (en) | 1992-12-29 | 1995-05-23 | North Carolina State University | Three-zone rapid thermal processing system utilizing wafer edge heating means |
DE69331659T2 (en) | 1993-01-13 | 2002-09-12 | Applied Materials Inc | Process for the deposition of polysilicon layers with an improved uniformity and associated device |
US5444217A (en) | 1993-01-21 | 1995-08-22 | Moore Epitaxial Inc. | Rapid thermal processing apparatus for processing semiconductor wafers |
US5308161A (en) | 1993-02-11 | 1994-05-03 | Quantum Logic Corporation | Pyrometer apparatus for use in rapid thermal processing of semiconductor wafers |
JP2824003B2 (en) | 1993-02-16 | 1998-11-11 | 大日本スクリーン製造株式会社 | Substrate temperature measurement device |
US5305417A (en) | 1993-03-26 | 1994-04-19 | Texas Instruments Incorporated | Apparatus and method for determining wafer temperature using pyrometry |
US5624590A (en) | 1993-04-02 | 1997-04-29 | Lucent Technologies, Inc. | Semiconductor processing technique, including pyrometric measurement of radiantly heated bodies and an apparatus for practicing this technique |
JP3380988B2 (en) | 1993-04-21 | 2003-02-24 | 東京エレクトロン株式会社 | Heat treatment equipment |
US5525160A (en) | 1993-05-10 | 1996-06-11 | Tokyo Electron Kabushiki Kaisha | Film deposition processing device having transparent support and transfer pins |
US5565382A (en) | 1993-10-12 | 1996-10-15 | Applied Materials, Inc. | Process for forming tungsten silicide on semiconductor wafer using dichlorosilane gas |
US5444814A (en) | 1993-11-01 | 1995-08-22 | Hofius, Sr.; David V. | Method of infrared welding on thermoplastic parts utilizing contoured energy reflecting shields |
US5444815A (en) | 1993-12-16 | 1995-08-22 | Texas Instruments Incorporated | Multi-zone lamp interference correction system |
JP3571785B2 (en) | 1993-12-28 | 2004-09-29 | キヤノン株式会社 | Method and apparatus for forming deposited film |
US5452396A (en) | 1994-02-07 | 1995-09-19 | Midwest Research Institute | Optical processing furnace with quartz muffle and diffuser plate |
US5551982A (en) | 1994-03-31 | 1996-09-03 | Applied Materials, Inc. | Semiconductor wafer process chamber with susceptor back coating |
US5451260A (en) | 1994-04-15 | 1995-09-19 | Cornell Research Foundation, Inc. | Method and apparatus for CVD using liquid delivery system with an ultrasonic nozzle |
US5493987A (en) | 1994-05-16 | 1996-02-27 | Ag Associates, Inc. | Chemical vapor deposition reactor and method |
US5561735A (en) | 1994-08-30 | 1996-10-01 | Vortek Industries Ltd. | Rapid thermal processing apparatus and method |
US5685995A (en) | 1994-11-22 | 1997-11-11 | Electro Scientific Industries, Inc. | Method for laser functional trimming of films and devices |
US5518549A (en) | 1995-04-18 | 1996-05-21 | Memc Electronic Materials, Inc. | Susceptor and baffle therefor |
JP3360098B2 (en) | 1995-04-20 | 2002-12-24 | 東京エレクトロン株式会社 | Shower head structure of processing equipment |
JP3553204B2 (en) | 1995-04-28 | 2004-08-11 | アネルバ株式会社 | CVD equipment |
US5830277A (en) * | 1995-05-26 | 1998-11-03 | Mattson Technology, Inc. | Thermal processing system with supplemental resistive heater and shielded optical pyrometry |
JP3288200B2 (en) | 1995-06-09 | 2002-06-04 | 東京エレクトロン株式会社 | Vacuum processing equipment |
US5551985A (en) | 1995-08-18 | 1996-09-03 | Torrex Equipment Corporation | Method and apparatus for cold wall chemical vapor deposition |
US5740314A (en) * | 1995-08-25 | 1998-04-14 | Edison Welding Institute | IR heating lamp array with reflectors modified by removal of segments thereof |
US5971565A (en) | 1995-10-20 | 1999-10-26 | Regents Of The University Of California | Lamp system with conditioned water coolant and diffuse reflector of polytetrafluorethylene(PTFE) |
US5932119A (en) * | 1996-01-05 | 1999-08-03 | Lazare Kaplan International, Inc. | Laser marking system |
US5756652A (en) * | 1996-02-29 | 1998-05-26 | Depuy Orthopaedics, Inc. | Poly (ester-anhydrides) and intermediates therefor |
JPH09320961A (en) | 1996-05-31 | 1997-12-12 | Nec Corp | Semiconductor manufacturing apparatus and manufacture of thin film transistor |
US5756369A (en) * | 1996-07-11 | 1998-05-26 | Lsi Logic Corporation | Rapid thermal processing using a narrowband infrared source and feedback |
DE69739368D1 (en) | 1996-08-27 | 2009-05-28 | Seiko Epson Corp | Separation method and method for transferring a thin film device |
US6211080B1 (en) * | 1996-10-30 | 2001-04-03 | Matsushita Electric Industrial Co., Ltd. | Repair of dielectric-coated electrode or circuit defects |
US5980637A (en) | 1996-12-20 | 1999-11-09 | Steag Rtp Systems, Inc. | System for depositing a material on a substrate using light energy |
US5820942A (en) | 1996-12-20 | 1998-10-13 | Ag Associates | Process for depositing a material on a substrate using light energy |
US5908307A (en) * | 1997-01-31 | 1999-06-01 | Ultratech Stepper, Inc. | Fabrication method for reduced-dimension FET devices |
US5954982A (en) | 1997-02-12 | 1999-09-21 | Nikon Corporation | Method and apparatus for efficiently heating semiconductor wafers or reticles |
US5874711A (en) * | 1997-04-17 | 1999-02-23 | Ag Associates | Apparatus and method for determining the temperature of a radiating surface |
US5792273A (en) | 1997-05-27 | 1998-08-11 | Memc Electric Materials, Inc. | Secondary edge reflector for horizontal reactor |
JPH1126733A (en) * | 1997-07-03 | 1999-01-29 | Seiko Epson Corp | Transfer method of thin film device, thin film device, thin film integrated circuit device, active matrix substrate, liquid crystal display and electronic equipment |
US6021152A (en) | 1997-07-11 | 2000-02-01 | Asm America, Inc. | Reflective surface for CVD reactor walls |
US5960158A (en) | 1997-07-11 | 1999-09-28 | Ag Associates | Apparatus and method for filtering light in a thermal processing chamber |
US6027244A (en) * | 1997-07-24 | 2000-02-22 | Steag Rtp Systems, Inc. | Apparatus for determining the temperature of a semi-transparent radiating body |
US6075922A (en) | 1997-08-07 | 2000-06-13 | Steag Rtp Systems, Inc. | Process for preventing gas leaks in an atmospheric thermal processing chamber |
US6238847B1 (en) * | 1997-10-16 | 2001-05-29 | Dmc Degussa Metals Catalysts Cerdec Ag | Laser marking method and apparatus |
US6222990B1 (en) | 1997-12-03 | 2001-04-24 | Steag Rtp Systems | Heating element for heating the edges of wafers in thermal processing chambers |
US5970382A (en) | 1998-01-26 | 1999-10-19 | Ag Associates | Process for forming coatings on semiconductor devices |
JP3809733B2 (en) * | 1998-02-25 | 2006-08-16 | セイコーエプソン株式会社 | Thin film transistor peeling method |
US6056434A (en) * | 1998-03-12 | 2000-05-02 | Steag Rtp Systems, Inc. | Apparatus and method for determining the temperature of objects in thermal processing chambers |
US6204484B1 (en) * | 1998-03-31 | 2001-03-20 | Steag Rtp Systems, Inc. | System for measuring the temperature of a semiconductor wafer during thermal processing |
US5970214A (en) | 1998-05-14 | 1999-10-19 | Ag Associates | Heating device for semiconductor wafers |
US6087655A (en) | 1998-05-19 | 2000-07-11 | Kobrin; Boris | Fiber grating encoders and methods for fabricating the same |
US6034357A (en) * | 1998-06-08 | 2000-03-07 | Steag Rtp Systems Inc | Apparatus and process for measuring the temperature of semiconductor wafers in the presence of radiation absorbing gases |
JP2000012479A (en) * | 1998-06-18 | 2000-01-14 | Dainippon Screen Mfg Co Ltd | Heat treatment system for substrate |
AU5085099A (en) * | 1998-06-25 | 2000-01-10 | Penn State Research Foundation, The | Electrostatic printing of a metallic toner to produce a polycrystalline semiconductor from an amorphous semiconductor |
US6582996B1 (en) | 1998-07-13 | 2003-06-24 | Fujitsu Limited | Semiconductor thin film forming method |
JP2000049107A (en) * | 1998-07-28 | 2000-02-18 | Japan Steel Works Ltd:The | Substrate heating device |
US6023555A (en) * | 1998-08-17 | 2000-02-08 | Eaton Corporation | Radiant heating apparatus and method |
US6210484B1 (en) | 1998-09-09 | 2001-04-03 | Steag Rtp Systems, Inc. | Heating device containing a multi-lamp cone for heating semiconductor wafers |
US6108491A (en) | 1998-10-30 | 2000-08-22 | Applied Materials, Inc. | Dual surface reflector |
FR2786790B1 (en) | 1998-12-04 | 2001-02-23 | Ecole Polytech | LASER PROCESSING OF AN OBJECT OF SHAPE MEMORY MATERIAL |
US6310328B1 (en) | 1998-12-10 | 2001-10-30 | Mattson Technologies, Inc. | Rapid thermal processing chamber for processing multiple wafers |
TW411033U (en) * | 1999-05-12 | 2000-11-01 | Nat Science Council | Reflector structure for improving irradiation uniformity of liner lamp array |
DE19923400A1 (en) * | 1999-05-21 | 2000-11-30 | Steag Rtp Systems Gmbh | Device and method for the thermal treatment of substrates |
AU2739301A (en) | 1999-12-21 | 2001-07-03 | Mattson Thermal Products, Inc. | Growth of ultrathin nitride on SI(100) by rapid thermal N2 treatment |
US6531681B1 (en) * | 2000-03-27 | 2003-03-11 | Ultratech Stepper, Inc. | Apparatus having line source of radiant energy for exposing a substrate |
US6666924B1 (en) | 2000-03-28 | 2003-12-23 | Asm America | Reaction chamber with decreased wall deposition |
US6476362B1 (en) | 2000-09-12 | 2002-11-05 | Applied Materials, Inc. | Lamp array for thermal processing chamber |
US20060291833A1 (en) * | 2005-06-01 | 2006-12-28 | Mattson Techonology, Inc. | Switchable reflector wall concept |
-
1999
- 1999-01-06 US US09/226,396 patent/US6771895B2/en not_active Expired - Lifetime
-
2000
- 2000-01-06 EP EP00901398A patent/EP1141999A1/en not_active Withdrawn
- 2000-01-06 JP JP2000592867A patent/JP2002534803A/en active Pending
- 2000-01-06 TW TW089100171A patent/TW504728B/en not_active IP Right Cessation
- 2000-01-06 US US09/478,247 patent/US6717158B1/en not_active Expired - Lifetime
- 2000-01-06 KR KR1020017008610A patent/KR100729006B1/en active IP Right Grant
- 2000-01-06 AU AU22246/00A patent/AU2224600A/en not_active Abandoned
- 2000-01-06 WO PCT/US2000/000228 patent/WO2000041223A1/en not_active Application Discontinuation
-
2004
- 2004-07-30 US US10/903,424 patent/US7038174B2/en not_active Expired - Lifetime
-
2006
- 2006-04-06 US US11/399,085 patent/US7608802B2/en not_active Expired - Fee Related
-
2009
- 2009-10-06 US US12/574,441 patent/US8138451B2/en not_active Expired - Fee Related
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4975561A (en) * | 1987-06-18 | 1990-12-04 | Epsilon Technology Inc. | Heating system for substrates |
US4981815A (en) * | 1988-05-09 | 1991-01-01 | Siemens Aktiengesellschaft | Method for rapidly thermally processing a semiconductor wafer by irradiation using semicircular or parabolic reflectors |
EP0476307A1 (en) * | 1990-08-16 | 1992-03-25 | Applied Materials, Inc. | Apparatus and method for substrate heating in semiconductor processes |
US5446825A (en) | 1991-04-24 | 1995-08-29 | Texas Instruments Incorporated | High performance multi-zone illuminator module for semiconductor wafer processing |
EP0576791A1 (en) | 1992-04-16 | 1994-01-05 | Texas Instruments Incorporated | Multi-zone illuminator with embedded process control sensors |
DE4306398A1 (en) * | 1993-03-02 | 1994-09-08 | Leybold Ag | Device for heating a substrate |
US5345534A (en) * | 1993-03-29 | 1994-09-06 | Texas Instruments Incorporated | Semiconductor wafer heater with infrared lamp module with light blocking means |
US5930456A (en) * | 1998-05-14 | 1999-07-27 | Ag Associates | Heating device for semiconductor wafers |
Non-Patent Citations (1)
Title |
---|
See also references of EP1141999A1 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2001031689A1 (en) * | 1999-10-28 | 2001-05-03 | Steag Rtp Systems Gmbh | Method and device for thermal treatment of substrates |
US7041610B1 (en) | 1999-10-28 | 2006-05-09 | Steag Rtp Systems Gmbh | Method and apparatus for the thermal treatment of substrates |
WO2002050875A2 (en) * | 2000-12-21 | 2002-06-27 | Mattson Thermal Products Inc. | Heating configuration for use in thermal processing chambers |
WO2002050875A3 (en) * | 2000-12-21 | 2002-09-19 | Mattson Thermal Products Inc | Heating configuration for use in thermal processing chambers |
US8222570B2 (en) | 2000-12-21 | 2012-07-17 | Mattson Technology, Inc. | System and process for heating semiconductor wafers by optimizing absorption of electromagnetic energy |
US8669496B2 (en) | 2000-12-21 | 2014-03-11 | Mattson Technology, Inc. | System and process for heating semiconductor wafers by optimizing absorption of electromagnetic energy |
EP4138121A1 (en) * | 2015-10-09 | 2023-02-22 | Applied Materials, Inc. | Diode laser for wafer heating for epi processes |
Also Published As
Publication number | Publication date |
---|---|
US6771895B2 (en) | 2004-08-03 |
JP2002534803A (en) | 2002-10-15 |
KR20010089787A (en) | 2001-10-08 |
US7038174B2 (en) | 2006-05-02 |
US6717158B1 (en) | 2004-04-06 |
AU2224600A (en) | 2000-07-24 |
KR100729006B1 (en) | 2007-06-14 |
US20100018960A1 (en) | 2010-01-28 |
US8138451B2 (en) | 2012-03-20 |
US20050008351A1 (en) | 2005-01-13 |
US20020017618A1 (en) | 2002-02-14 |
TW504728B (en) | 2002-10-01 |
US20060201927A1 (en) | 2006-09-14 |
EP1141999A1 (en) | 2001-10-10 |
US7608802B2 (en) | 2009-10-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6717158B1 (en) | Heating device for heating semiconductor wafers in thermal processing chambers | |
US7949237B2 (en) | Heating configuration for use in thermal processing chambers | |
KR100629016B1 (en) | Multi-lamp cone reflector for semiconductor wafer heating | |
US5930456A (en) | Heating device for semiconductor wafers | |
US6559424B2 (en) | Windows used in thermal processing chambers | |
US8222570B2 (en) | System and process for heating semiconductor wafers by optimizing absorption of electromagnetic energy | |
US5970214A (en) | Heating device for semiconductor wafers | |
US6222990B1 (en) | Heating element for heating the edges of wafers in thermal processing chambers | |
US9029739B2 (en) | Apparatus and methods for rapid thermal processing | |
US20020005400A1 (en) | Rapid thermal processing chamber for processing multiple wafers | |
US8005352B2 (en) | Heat treating device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A1 Designated state(s): AE AL AM AT AU AZ BA BB BG BR BY CA CH CN CR CU CZ DE DK DM EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX NO NZ PL PT RO RU SD SE SG SI SK SL TJ TM TR TT TZ UA UG UZ VN YU ZA ZW |
|
AL | Designated countries for regional patents |
Kind code of ref document: A1 Designated state(s): GH GM KE LS MW SD SL SZ TZ UG ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE BF BJ CF CG CI CM GA GN GW ML MR NE SN TD TG |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
DFPE | Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101) | ||
ENP | Entry into the national phase |
Ref country code: JP Ref document number: 2000 592867 Kind code of ref document: A Format of ref document f/p: F |
|
WWE | Wipo information: entry into national phase |
Ref document number: 1020017008610 Country of ref document: KR |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2000901398 Country of ref document: EP |
|
WWP | Wipo information: published in national office |
Ref document number: 1020017008610 Country of ref document: KR |
|
WWP | Wipo information: published in national office |
Ref document number: 2000901398 Country of ref document: EP |
|
REG | Reference to national code |
Ref country code: DE Ref legal event code: 8642 |
|
WWR | Wipo information: refused in national office |
Ref document number: 1020017008610 Country of ref document: KR |