WO2000040779A8 - Method, chemistry, and apparatus for high deposition rate solder electroplating on a microelectronic workpiece - Google Patents

Method, chemistry, and apparatus for high deposition rate solder electroplating on a microelectronic workpiece

Info

Publication number
WO2000040779A8
WO2000040779A8 PCT/US1999/015850 US9915850W WO0040779A8 WO 2000040779 A8 WO2000040779 A8 WO 2000040779A8 US 9915850 W US9915850 W US 9915850W WO 0040779 A8 WO0040779 A8 WO 0040779A8
Authority
WO
WIPO (PCT)
Prior art keywords
workpiece
electroplating
electroplating solution
deposition rate
tin
Prior art date
Application number
PCT/US1999/015850
Other languages
French (fr)
Other versions
WO2000040779A1 (en
Inventor
Robert W Batz
Scot Conrady
Thomas L Ritzdorf
Original Assignee
Semitool Inc
Robert W Batz
Scot Conrady
Thomas L Ritzdorf
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semitool Inc, Robert W Batz, Scot Conrady, Thomas L Ritzdorf filed Critical Semitool Inc
Priority to US09/386,213 priority Critical patent/US6334937B1/en
Publication of WO2000040779A1 publication Critical patent/WO2000040779A1/en
Publication of WO2000040779A8 publication Critical patent/WO2000040779A8/en
Priority to US09/884,003 priority patent/US6669834B2/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/30—Electroplating: Baths therefor from solutions of tin
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/34—Electroplating: Baths therefor from solutions of lead
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer

Abstract

The invention is directed to an electroplating apparatus for selectively depositing tin/lead solder bumps at a high deposition rate. The apparatus comprises a reactor bowl (35) containing an electroplating solution having free ions of tin and lead for plating onto a workpiece (25). A chemical delivery system is used to deliver the electroplating solution to the reactor bowl at a high flow rate. A workpiece support includes a contact assembly (85) for providing electroplating power to a surface at a side of the workpiece that is to be plated. The assembly contacts the workpiece at a large plurality of discrete flexure contacts (90) that are isolated from exposure to the electroplating solution. An anode (55) is spaced from the workpiece support within the reactor assembly (20) and is in contact with the electroplating solution. The electroplating solution comprises a concentration of a lead compound, a concentration of a tin compound, water and methane sulfonic acid.
PCT/US1999/015850 1998-12-31 1999-07-12 Method, chemistry, and apparatus for high deposition rate solder electroplating on a microelectronic workpiece WO2000040779A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US09/386,213 US6334937B1 (en) 1998-12-31 1999-08-31 Apparatus for high deposition rate solder electroplating on a microelectronic workpiece
US09/884,003 US6669834B2 (en) 1998-12-31 2001-06-18 Method for high deposition rate solder electroplating on a microelectronic workpiece

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11445098P 1998-12-31 1998-12-31
US60/114,450 1998-12-31

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US09/386,213 Continuation US6334937B1 (en) 1998-12-31 1999-08-31 Apparatus for high deposition rate solder electroplating on a microelectronic workpiece

Publications (2)

Publication Number Publication Date
WO2000040779A1 WO2000040779A1 (en) 2000-07-13
WO2000040779A8 true WO2000040779A8 (en) 2001-02-22

Family

ID=22355289

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1999/015850 WO2000040779A1 (en) 1998-12-31 1999-07-12 Method, chemistry, and apparatus for high deposition rate solder electroplating on a microelectronic workpiece

Country Status (3)

Country Link
US (2) US6334937B1 (en)
TW (1) TW483950B (en)
WO (1) WO2000040779A1 (en)

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Also Published As

Publication number Publication date
US20020000378A1 (en) 2002-01-03
US6669834B2 (en) 2003-12-30
WO2000040779A1 (en) 2000-07-13
TW483950B (en) 2002-04-21
US6334937B1 (en) 2002-01-01

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