WO2000036634A3 - Amorphization of substrate to prevent silicide encroachment into channel region of field effect transistor - Google Patents

Amorphization of substrate to prevent silicide encroachment into channel region of field effect transistor Download PDF

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Publication number
WO2000036634A3
WO2000036634A3 PCT/US1999/026865 US9926865W WO0036634A3 WO 2000036634 A3 WO2000036634 A3 WO 2000036634A3 US 9926865 W US9926865 W US 9926865W WO 0036634 A3 WO0036634 A3 WO 0036634A3
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
channel region
amorphization
field effect
effect transistor
Prior art date
Application number
PCT/US1999/026865
Other languages
French (fr)
Other versions
WO2000036634A2 (en
Inventor
Gang Bai
Pauline N Jacob
Chia-Hong Jan
Julie A Tsai
Original Assignee
Intel Corp
Gang Bai
Pauline N Jacob
Chia-Hong Jan
Julie A Tsai
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp, Gang Bai, Pauline N Jacob, Chia-Hong Jan, Julie A Tsai filed Critical Intel Corp
Priority to AU16217/00A priority Critical patent/AU1621700A/en
Priority to KR1020017007390A priority patent/KR20010089572A/en
Priority to JP2000588792A priority patent/JP2003526198A/en
Publication of WO2000036634A2 publication Critical patent/WO2000036634A2/en
Publication of WO2000036634A3 publication Critical patent/WO2000036634A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
    • H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System the conductive layers comprising silicides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors

Abstract

A MOSFET includes silicided source/drain terminals (106) and a substantially metal-free channel region (112), wherein the metal is characterized in that it diffuses more easily into the material of the substrate which contains the source/drain terminals (106) than the material of the substrate diffuses into the metal. In a further aspect of the present invention, a portion of the source/drain terminals (106) of a MOSFET are converted to an amorphous material (122) prior to being reacted with a metal.
PCT/US1999/026865 1998-12-16 1999-11-12 Amorphization of substrate to prevent silicide encroachment into channel region of field effect transistor WO2000036634A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
AU16217/00A AU1621700A (en) 1998-12-16 1999-11-12 Amorphization of substrate to prevent silicide encroachment into channel region of field effect transistor
KR1020017007390A KR20010089572A (en) 1998-12-16 1999-11-12 Amorphization of substrate to prevent silicide encroachment into channel region of field effect transistor
JP2000588792A JP2003526198A (en) 1998-12-16 1999-11-12 Amorphization of substrate to prevent intrusion of silicide into channel region of field effect transistor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US21255398A 1998-12-16 1998-12-16
US09/212,553 1998-12-16

Publications (2)

Publication Number Publication Date
WO2000036634A2 WO2000036634A2 (en) 2000-06-22
WO2000036634A3 true WO2000036634A3 (en) 2002-06-27

Family

ID=22791505

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US1999/026865 WO2000036634A2 (en) 1998-12-16 1999-11-12 Amorphization of substrate to prevent silicide encroachment into channel region of field effect transistor

Country Status (4)

Country Link
JP (1) JP2003526198A (en)
KR (1) KR20010089572A (en)
AU (1) AU1621700A (en)
WO (1) WO2000036634A2 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10250611B4 (en) * 2002-10-30 2006-01-26 Advanced Micro Devices, Inc., Sunnyvale A method for producing a metal silicide region in a semiconductor region containing doped silicon
EP1489647A3 (en) * 2003-06-20 2007-08-29 STMicroelectronics S.A. Method of manufacturing a silicide
FR2856514A1 (en) 2003-06-20 2004-12-24 St Microelectronics Sa PROCESS FOR THE SELECTIVE FORMATION OF SILICIDE ON A PLATE OF SEMICONDUCTOR MATERIAL
KR100738066B1 (en) 2003-12-01 2007-07-12 삼성전자주식회사 Method of forming silicide film having excellent thermal stability, semiconductor device and semiconductor memory device comprising silicide film formed by the same, and methods of manufacturing the same
US7105429B2 (en) 2004-03-10 2006-09-12 Freescale Semiconductor, Inc. Method of inhibiting metal silicide encroachment in a transistor
JP5244364B2 (en) 2007-10-16 2013-07-24 株式会社半導体エネルギー研究所 Semiconductor device and manufacturing method thereof

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62122173A (en) * 1985-11-20 1987-06-03 Fujitsu Ltd Semiconductor device
JPH05136398A (en) * 1991-11-15 1993-06-01 Toshiba Corp Manufacture of semiconductor device
US5691212A (en) * 1996-09-27 1997-11-25 Taiwan Semiconductor Manufacturing Company, Ltd. MOS device structure and integration method
US5710450A (en) * 1994-12-23 1998-01-20 Intel Corporation Transistor with ultra shallow tip and method of fabrication
US5766997A (en) * 1909-11-30 1998-06-16 Nkk Corporation Method of forming floating gate type non-volatile semiconductor memory device having silicided source and drain regions
US5807770A (en) * 1995-03-13 1998-09-15 Nec Corporation Fabrication method of semiconductor device containing semiconductor active film
US5899720A (en) * 1994-12-28 1999-05-04 Nec Corporation Process of fabricating salicide structure from high-purity reproducible cobalt layer without sacrifice of leakage current and breakdown voltage of P-N junction
US6010936A (en) * 1996-11-27 2000-01-04 Lg Semicon Co., Ltd. Semiconductor device fabrication method

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5766997A (en) * 1909-11-30 1998-06-16 Nkk Corporation Method of forming floating gate type non-volatile semiconductor memory device having silicided source and drain regions
JPS62122173A (en) * 1985-11-20 1987-06-03 Fujitsu Ltd Semiconductor device
JPH05136398A (en) * 1991-11-15 1993-06-01 Toshiba Corp Manufacture of semiconductor device
US5710450A (en) * 1994-12-23 1998-01-20 Intel Corporation Transistor with ultra shallow tip and method of fabrication
US5899720A (en) * 1994-12-28 1999-05-04 Nec Corporation Process of fabricating salicide structure from high-purity reproducible cobalt layer without sacrifice of leakage current and breakdown voltage of P-N junction
US5807770A (en) * 1995-03-13 1998-09-15 Nec Corporation Fabrication method of semiconductor device containing semiconductor active film
US5691212A (en) * 1996-09-27 1997-11-25 Taiwan Semiconductor Manufacturing Company, Ltd. MOS device structure and integration method
US6010936A (en) * 1996-11-27 2000-01-04 Lg Semicon Co., Ltd. Semiconductor device fabrication method

Also Published As

Publication number Publication date
AU1621700A (en) 2000-07-03
KR20010089572A (en) 2001-10-06
WO2000036634A2 (en) 2000-06-22
JP2003526198A (en) 2003-09-02

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