WO2000036634A2 - Amorphization of substrate to prevent silicide encroachment into channel region of field effect transistor - Google Patents
Amorphization of substrate to prevent silicide encroachment into channel region of field effect transistorInfo
- Publication number
- WO2000036634A2 WO2000036634A2 PCT/US1999/026865 US9926865W WO0036634A2 WO 2000036634 A2 WO2000036634 A2 WO 2000036634A2 US 9926865 W US9926865 W US 9926865W WO 0036634 A2 WO0036634 A2 WO 0036634A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- source
- substrate
- metal
- drain terminals
- forming
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 40
- 229910021332 silicide Inorganic materials 0.000 title claims description 12
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 title claims description 10
- 230000005669 field effect Effects 0.000 title claims description 8
- 238000005280 amorphization Methods 0.000 title description 2
- 229910052751 metal Inorganic materials 0.000 claims abstract description 58
- 239000002184 metal Substances 0.000 claims abstract description 58
- 239000000463 material Substances 0.000 claims abstract description 16
- 238000000034 method Methods 0.000 claims description 25
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 17
- 125000006850 spacer group Chemical group 0.000 claims description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 12
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 12
- 229910052710 silicon Inorganic materials 0.000 claims description 12
- 239000010703 silicon Substances 0.000 claims description 12
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 11
- 229910052759 nickel Inorganic materials 0.000 claims description 8
- 150000002500 ions Chemical class 0.000 claims description 7
- 239000012212 insulator Substances 0.000 claims description 6
- 229920005591 polysilicon Polymers 0.000 claims description 5
- 229910017052 cobalt Inorganic materials 0.000 claims description 4
- 239000010941 cobalt Substances 0.000 claims description 4
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims description 4
- 239000002245 particle Substances 0.000 claims 2
- 229910052732 germanium Inorganic materials 0.000 claims 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 1
- 238000000059 patterning Methods 0.000 claims 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 20
- 239000004065 semiconductor Substances 0.000 description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 6
- 230000008901 benefit Effects 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- 229910052719 titanium Inorganic materials 0.000 description 6
- 206010010144 Completed suicide Diseases 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 5
- 150000002739 metals Chemical class 0.000 description 3
- 238000004377 microelectronic Methods 0.000 description 3
- 238000011112 process operation Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 230000007257 malfunction Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229910021341 titanium silicide Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- -1 but not limited to Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
- H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System the conductive layers comprising silicides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU16217/00A AU1621700A (en) | 1998-12-16 | 1999-11-12 | Amorphization of substrate to prevent silicide encroachment into channel region of field effect transistor |
KR1020017007390A KR20010089572A (en) | 1998-12-16 | 1999-11-12 | Amorphization of substrate to prevent silicide encroachment into channel region of field effect transistor |
JP2000588792A JP2003526198A (en) | 1998-12-16 | 1999-11-12 | Amorphization of substrate to prevent intrusion of silicide into channel region of field effect transistor |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US21255398A | 1998-12-16 | 1998-12-16 | |
US09/212,553 | 1998-12-16 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2000036634A2 true WO2000036634A2 (en) | 2000-06-22 |
WO2000036634A3 WO2000036634A3 (en) | 2002-06-27 |
Family
ID=22791505
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US1999/026865 WO2000036634A2 (en) | 1998-12-16 | 1999-11-12 | Amorphization of substrate to prevent silicide encroachment into channel region of field effect transistor |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP2003526198A (en) |
KR (1) | KR20010089572A (en) |
AU (1) | AU1621700A (en) |
WO (1) | WO2000036634A2 (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10250611A1 (en) * | 2002-10-30 | 2004-05-19 | Advanced Micro Devices, Inc., Sunnyvale | Method for producing a nickel silicide region in a semiconductor region containing doped silicon |
EP1489647A2 (en) * | 2003-06-20 | 2004-12-22 | STMicroelectronics S.A. | Method of manufacturing a silicide |
US7022595B2 (en) | 2003-06-20 | 2006-04-04 | Stmicroelectronics Sa | Method for the selective formation of a silicide on a wafer using an implantation residue layer |
US7105429B2 (en) | 2004-03-10 | 2006-09-12 | Freescale Semiconductor, Inc. | Method of inhibiting metal silicide encroachment in a transistor |
KR100738066B1 (en) | 2003-12-01 | 2007-07-12 | 삼성전자주식회사 | Method of forming silicide film having excellent thermal stability, semiconductor device and semiconductor memory device comprising silicide film formed by the same, and methods of manufacturing the same |
US8053289B2 (en) | 2007-10-16 | 2011-11-08 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method for thin film transistor on insulator |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5691212A (en) * | 1996-09-27 | 1997-11-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | MOS device structure and integration method |
US5710450A (en) * | 1994-12-23 | 1998-01-20 | Intel Corporation | Transistor with ultra shallow tip and method of fabrication |
US5766997A (en) * | 1909-11-30 | 1998-06-16 | Nkk Corporation | Method of forming floating gate type non-volatile semiconductor memory device having silicided source and drain regions |
US5807770A (en) * | 1995-03-13 | 1998-09-15 | Nec Corporation | Fabrication method of semiconductor device containing semiconductor active film |
US5899720A (en) * | 1994-12-28 | 1999-05-04 | Nec Corporation | Process of fabricating salicide structure from high-purity reproducible cobalt layer without sacrifice of leakage current and breakdown voltage of P-N junction |
US6010936A (en) * | 1996-11-27 | 2000-01-04 | Lg Semicon Co., Ltd. | Semiconductor device fabrication method |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62122173A (en) * | 1985-11-20 | 1987-06-03 | Fujitsu Ltd | Semiconductor device |
JPH05136398A (en) * | 1991-11-15 | 1993-06-01 | Toshiba Corp | Manufacture of semiconductor device |
-
1999
- 1999-11-12 WO PCT/US1999/026865 patent/WO2000036634A2/en not_active Application Discontinuation
- 1999-11-12 KR KR1020017007390A patent/KR20010089572A/en not_active Application Discontinuation
- 1999-11-12 AU AU16217/00A patent/AU1621700A/en not_active Abandoned
- 1999-11-12 JP JP2000588792A patent/JP2003526198A/en active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5766997A (en) * | 1909-11-30 | 1998-06-16 | Nkk Corporation | Method of forming floating gate type non-volatile semiconductor memory device having silicided source and drain regions |
US5710450A (en) * | 1994-12-23 | 1998-01-20 | Intel Corporation | Transistor with ultra shallow tip and method of fabrication |
US5899720A (en) * | 1994-12-28 | 1999-05-04 | Nec Corporation | Process of fabricating salicide structure from high-purity reproducible cobalt layer without sacrifice of leakage current and breakdown voltage of P-N junction |
US5807770A (en) * | 1995-03-13 | 1998-09-15 | Nec Corporation | Fabrication method of semiconductor device containing semiconductor active film |
US5691212A (en) * | 1996-09-27 | 1997-11-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | MOS device structure and integration method |
US6010936A (en) * | 1996-11-27 | 2000-01-04 | Lg Semicon Co., Ltd. | Semiconductor device fabrication method |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10250611A1 (en) * | 2002-10-30 | 2004-05-19 | Advanced Micro Devices, Inc., Sunnyvale | Method for producing a nickel silicide region in a semiconductor region containing doped silicon |
DE10250611B4 (en) * | 2002-10-30 | 2006-01-26 | Advanced Micro Devices, Inc., Sunnyvale | A method for producing a metal silicide region in a semiconductor region containing doped silicon |
EP1489647A2 (en) * | 2003-06-20 | 2004-12-22 | STMicroelectronics S.A. | Method of manufacturing a silicide |
US7022595B2 (en) | 2003-06-20 | 2006-04-04 | Stmicroelectronics Sa | Method for the selective formation of a silicide on a wafer using an implantation residue layer |
EP1489647A3 (en) * | 2003-06-20 | 2007-08-29 | STMicroelectronics S.A. | Method of manufacturing a silicide |
KR100738066B1 (en) | 2003-12-01 | 2007-07-12 | 삼성전자주식회사 | Method of forming silicide film having excellent thermal stability, semiconductor device and semiconductor memory device comprising silicide film formed by the same, and methods of manufacturing the same |
US7105429B2 (en) | 2004-03-10 | 2006-09-12 | Freescale Semiconductor, Inc. | Method of inhibiting metal silicide encroachment in a transistor |
US8053289B2 (en) | 2007-10-16 | 2011-11-08 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method for thin film transistor on insulator |
US8664722B2 (en) | 2007-10-16 | 2014-03-04 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor with metal silicide layer |
Also Published As
Publication number | Publication date |
---|---|
WO2000036634A3 (en) | 2002-06-27 |
AU1621700A (en) | 2000-07-03 |
KR20010089572A (en) | 2001-10-06 |
JP2003526198A (en) | 2003-09-02 |
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