WO2000033365A8 - Fabrication of gallium nitride layers by lateral growth - Google Patents
Fabrication of gallium nitride layers by lateral growthInfo
- Publication number
- WO2000033365A8 WO2000033365A8 PCT/US1999/028056 US9928056W WO0033365A8 WO 2000033365 A8 WO2000033365 A8 WO 2000033365A8 US 9928056 W US9928056 W US 9928056W WO 0033365 A8 WO0033365 A8 WO 0033365A8
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- gallium nitride
- posts
- mask
- sidewalls
- trenches
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02378—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02639—Preparation of substrate for selective deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02647—Lateral overgrowth
- H01L21/0265—Pendeoepitaxy
Abstract
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000585920A JP4790909B2 (en) | 1998-11-24 | 1999-11-23 | Fabrication of gallium nitride layers by lateral growth. |
DE69940274T DE69940274D1 (en) | 1998-11-24 | 1999-11-23 | PREPARATION OF GALLIUM NITRIDE LAYERS USING LATERAL CRYSTAL GROWTH |
EP99967152A EP1138063B1 (en) | 1998-11-24 | 1999-11-23 | Fabrication of gallium nitride layers by lateral growth |
AU23491/00A AU2349100A (en) | 1998-11-24 | 1999-11-23 | Fabrication of gallium nitride layers by lateral growth |
CA002347425A CA2347425C (en) | 1998-11-24 | 1999-11-23 | Fabrication of gallium nitride layers by lateral growth |
DE1138063T DE1138063T1 (en) | 1998-11-24 | 1999-11-23 | MANUFACTURE OF GALLIUM NITRIDE LAYERS BY LATERAL CRYSTAL GROWTH |
HK01107129.8A HK1036360A1 (en) | 1998-11-24 | 2001-10-11 | Fabrication of gallium nitride layers by lateral growth |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/198,784 | 1998-11-24 | ||
US09/198,784 US6177688B1 (en) | 1998-11-24 | 1998-11-24 | Pendeoepitaxial gallium nitride semiconductor layers on silcon carbide substrates |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2000033365A1 WO2000033365A1 (en) | 2000-06-08 |
WO2000033365A8 true WO2000033365A8 (en) | 2002-01-24 |
Family
ID=22734832
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US1999/028056 WO2000033365A1 (en) | 1998-11-24 | 1999-11-23 | Fabrication of gallium nitride layers by lateral growth |
Country Status (13)
Country | Link |
---|---|
US (4) | US6177688B1 (en) |
EP (1) | EP1138063B1 (en) |
JP (1) | JP4790909B2 (en) |
KR (1) | KR100608996B1 (en) |
CN (1) | CN1155993C (en) |
AT (1) | ATE420458T1 (en) |
AU (1) | AU2349100A (en) |
CA (1) | CA2347425C (en) |
DE (2) | DE1138063T1 (en) |
ES (1) | ES2169015T1 (en) |
HK (1) | HK1036360A1 (en) |
MY (1) | MY129562A (en) |
WO (1) | WO2000033365A1 (en) |
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US6177688B1 (en) | 2001-01-23 |
CN1348603A (en) | 2002-05-08 |
MY129562A (en) | 2007-04-30 |
US6462355B1 (en) | 2002-10-08 |
CA2347425C (en) | 2009-06-02 |
CA2347425A1 (en) | 2000-06-08 |
US6376339B2 (en) | 2002-04-23 |
EP1138063A1 (en) | 2001-10-04 |
ES2169015T1 (en) | 2002-07-01 |
US7378684B2 (en) | 2008-05-27 |
DE69940274D1 (en) | 2009-02-26 |
KR100608996B1 (en) | 2006-08-03 |
EP1138063B1 (en) | 2009-01-07 |
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