WO2000032349A1 - Material processing applications of lasers using optical breakdown - Google Patents
Material processing applications of lasers using optical breakdown Download PDFInfo
- Publication number
- WO2000032349A1 WO2000032349A1 PCT/IL1999/000655 IL9900655W WO0032349A1 WO 2000032349 A1 WO2000032349 A1 WO 2000032349A1 IL 9900655 W IL9900655 W IL 9900655W WO 0032349 A1 WO0032349 A1 WO 0032349A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- pulses
- laser radiation
- sample
- moving
- focal point
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
- B23K26/0624—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses using ultrashort pulses, i.e. pulses of 1ns or less
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/30—Organic material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/30—Organic material
- B23K2103/42—Plastics
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
Definitions
- the present invention relates to the field of the laser processing of materials by means of optical breakdown phenomena in the materials, especially using lasers with ultra-short pulse widths.
- the present invention seeks to provide new methods for material processing using the volume optical breakdown phenomenon in optically transparent materials
- This phenomenon occurs when the beam from a laser emitting ultra-short pulses of the order of tens of picoseconds or less, is focused into the volume of the material to be processed by means of a high quality focusing objective lens, such that a focal spot close to the diffraction limit for the laser wavelength is obtained within the material.
- Such short, high peak power pulses can be obtained for example, from temporally compressed backward stimulated Brillouin scattering (SBS) Nd:YAG lasers..
- SBS temporally compressed backward stimulated Brillouin scattering
- the material undergoes optical breakdown, since the transmission limit of linear response to power is exceeded in the material, which then strongly absorbs the laser radiation. Because of the intense power density, atomic and molecular bonds of the material are broken down, and the material decomposes almost instantaneously into its most basic components, generally highly ionized component atoms.
- a method whereby ultra-fine resolution marking or image formation can be applied to the interior of a transparent sample.
- the marking or image can be applied in one plane within the interior of the material, or with a true three dimensional effect.
- the use of longer pulse lengths, of the order of tens of nanoseconds, as used in previously available techniques, such as are described in U.S. Patent No. 5,206,496, to R.M. Clement et al. results in microcracking, because of the concomitant local micro-heating of the material at the point of focus.
- the mark dimensions are thus correspondingly larger.
- the total energy per pulse is much reduced, and the only physical effect operative on the material is that of optical volume breakdown, resulting in a mark size not much larger than the diffraction limited focal spot size.
- the method of the present invention is thus particularly advantageous in the marking of diamonds, where it is important that the markings be invisible to the naked eye.
- a method whereby optical breakdown marking and image formation in transparent materials is performed by angular scanning of the laser beam in synchronization with the output pulse program of the pulsed laser.
- the scanner may be of the galvanometer, acousto-optic or rotating mirror type, or any other suitable high speed angular scanning device, capable of keeping the beam positioning mechanism in synchronization with the high rate of the beam marking process.
- a method whereby materials which are opaque to visible light but transparent in the near infra-red can be marked internally with a very high resolution identifying mark that can be read using a near infra-red source of radiation.
- this embodiment uses the volume optical breakdown effect to write within the bulk of the wafer, a very high resolution mark using a laser wavelength to which the semiconductor material is transparent.
- a method for drilling ultra-fine holes in transparent materials is further provided.
- a prior art method for drilling parallel holes has been described by T.R. Anthony in U.S. Patent No. 4,473,737.
- Q-switched Nd:YAG laser pulses of 200 nsec. duration holes of diameter 25 ⁇ m are obtained in 0.33mm thick sapphire wafers, for use in the semiconductor industry.
- the holes are drilled with only a slight taper by means of reverse drilling from the far side of the wafer towards the near side, far and near being relative to the impingement surface of the laser beam.
- a preferred method of the present invention by using the volume optical breakdown effect in the material to be drilled, it becomes possible to produce very fine holes by means of reverse drilling, and with diameters of the same order of magnitude as the focal size of the laser drilling beam. Furthermore, it is possible, using the method of the present invention to drill holes and channels in any direction, including non-straight holes, such as a meandering path.
- a method for ultra-fine cutting of transparent materials can be similar to that described in the above mentioned drilling embodiment, but including the further step of drilling further holes closely spaced to each other such that a continuous cut channel is produced.
- the focused laser beam is made to execute multiple traverses of the material to be cut, first of all at the surface of the material, and slowly working down through the material with a sawing motion, to produce a complete cut channel, which can extend right through the thickness of the material if desired.
- a method of performing material processing on a material substantially transparent to a laser radiation consisting of the steps of focusing pulses of the laser radiation into the volume of the material, the pulses being such that the material undergoes optical breakdown, and moving the focal point of the pulses of the laser radiation relative to the material according to a predetermined path.
- the material is a glass, a plastic, a gemstone, or a semiconductor.
- a method of forming images in a material substantially transparent to a laser radiation consisting of the steps of focusing pulses of the laser radiation into the volume of the material, the pulses being of width shorter than 100 picoseconds, and of pulse energy and power density such that the material undergoes optical breakdown in micro-zones, without the formation of radial cracks, and moving the focal point of the pulses of the laser radiation relative to the material according to a predetermined path
- a method of forming images inside the volume of a material opaque to visible radiation and substantially transparent to a laser radiation consisting of the steps of focusing pulses of the laser radiation into the volume of the material, the pulses being of width shorter than 100 picoseconds, such that the material undergoes optical breakdown, and moving the focal point of the pulses of the laser radiation relative to the material according to a predetermined path
- a method of drilling a hole through a sample of material substantially transparent to a laser radiation consisting of the steps of focusing pulses of the laser radiation through the volume of the sample, onto a location close to the surface of the sample further from the surface on which the laser radiation impinges, the pulses being of width shorter than 100 picoseconds, such that the material of the sample undergoes optical breakdown and produces a first hole, short in length compared with the thickness of the sample, and which breaks out of the surface of sample further from the surface on which the laser radiation impinges, moving the focal point of the pulses of the laser radiation back towards the surface on which the laser radiation impinges, by a predetermined distance, such that a second hole is produced by the optical breakdown of the material, the predetermined distance being such that the second hole just enters the first hole, and repeating the previous step until the first and second holes produce a continuous hole through the complete thickness of the sample.
- a method is described of producing ultra-fine resolution marking or image formation in the interior of a transparent sample.
- a temporally compressed backward stimulated Brillouin scattering (SBS) Nd:YAG laser source is used, which can typically provide up to lmJ pulses of 20 psec. width at a wavelength of 630 nm.
- a high quality focusing lens system is preferably used, enabling a spot size of the order of 1 ⁇ m to be obtained.
- the object to be marked is moved to produce a complete marking sequence or image. If the motion is performed in only one direction, the trivial case of an inscribed line is obtained.
- the marking or image is applied in a plane within the interior of the material. If all three axes are used, or alternatively, two axes and a rotation, a true three dimensional image is obtained within the volume of the object.
- the total energy per pulse needed for bulk optical breakdown need be no more than 1 ⁇ J or even less, and the only physical effect operative on the material is that of optical volume breakdown, resulting in a mark size not much larger than the diffraction limited focal spot size.
- the mark, at these pulse widths and pulse energies, shows no sign of radial microcracking due to local heating effects, with its accompanying widening effect, such as is obtained with the previously described technology using longer pulse lasers.
- the method of the present invention enables ultra-fine marks to be applied within the interior of the sample, with mark widths only slightly larger than the size of the diffraction limited focal spot size, this being of the order of l ⁇ m.
- the method can be applied to any material substantially transparent to the laser wavelength, such as plastics or glass, and semi-precious or precious gemstones including diamonds.
- a method is described of producing the relative motion of the sample and the focused laser beam producing the optical breakdown marking or image formation by means of angular scanning of the laser beam in synchronization with the output pulse program of the pulsed laser.
- the scanner is of the galvanometer type, but acousto-optic or rotating mirror types, or any other suitable high speed angular scanning device may be used, on condition that it is capable of keeping the beam positioning mechanism in synchronization with the high rate of the beam marking process.
- a further method of the use of volume optical breakdown in material processing is that of forming truly black images and marks in plastic materials.
- Such internal markings or images are essential in many high resolution optical components, which require good optical contrast effects by the use of a true black marking technique.
- the use of the method described in this preferred embodiment allows the production of such components at low cost, and yet with very high precision, on plastic components, where previously, they had to be manufactured in glass by comparatively costly graticule technology methods.
- the methods consists of the steps of focusing an ultra-short pulse width laser, such as that with the characteristics described above, onto the plastic optical part, and then moving the part in synchronization with the laser pulse output according to a predetermined program, thereby producing the required marking pattern or image.
- the type of plastic used must be determined by experiment, since not all transparent plastics produce a strong black color. It seems that those plastics which absorb ultra-violet radiation strongly, may produce the best black markings. It is thought that this is due to the effect on the plastic of the ultra violet radiation produced by the plasma formed during the optical breakdown process in the plastic. Plastics which absorb the UV radiation well, carbonize well, thus producing strong black coloring.
- a method whereby a material which is opaque to visible light but transparent in the near infra-red can be marked internally with a very high resolution identifying mark that can be read using a near infra-red source of radiation.
- the method consists of the steps of focusing an ultra-short pulse width laser, such as that described in the methods of the previous embodiments, into the sample to be marked, followed by the step described above of moving the sample and laser beam in synchronization with the laser pulsing rate, such as to form the desired mark.
- This method is particularly useful in the semiconductor industry, where a need exists to mark silicon or gallium arsenide wafers with very high resolution identifying marks, and without doing so on the surface of the wafer, where the debris of a surface marking process would be detrimental to the level of cleanliness required in many of the wafer processing stages.
- marks can be applied by conventional microlithographic methods using photoresist and etching procedures, the internal laser marking method is vastly quicker, and is a simple one stage process, unlike the microlithographic method.
- the use of an internal marking method such as that described in this embodiment of the present invention, leaves the surface of the wafer uncluttered with superfluous features.
- This advantage of this embodiment of the present invention becomes even more important when marking has to be applied at a chip level, rather than at a wafer level, since chip real estate is such a high value commodity.
- silicon which is substantially transparent from about 1.1 ⁇ m to almost 5 ⁇ m
- a laser emitting pulses at 1.9 ⁇ m is suitable for implementing the method of this embodiment.
- a further method is that of using the volume optical breakdown effect to drill very parallel ultra-fine holes in transparent samples by means of a reverse drilling procedure.
- the method consists of the steps of first focusing an ultra-short pulse width laser, such as that described in the first preferred embodiment above, just inside the further surface of the sample through which the hole is to be drilled, and of firing a predetermined number of pulses.
- the volume optical breakdown incurred causes a narrow void or hole to be drilled, with the debris being ejected forward, in the beam direction, and away from the sample.
- the interaction mechanism of the laser with the material is that of optical breakdown, since a plume of plasma is seen ejected from the front end of the drilled hole.
- the void formed has a diameter of the same order of magnitude as the focal size of the laser drilling beam, and is typically only 1 ⁇ m in plastic materials, or 2 ⁇ m to 3 ⁇ m in more refractory materials such as glass or sapphire.
- the focal position of the laser is moved back a distance of 0.1 - 10 ⁇ m, depending on the material and another series of pulses is fired. This extends the void to join the already existent void. In this way, a complete hole is drilled through the sample by means of optical breakdown interactions. Since the hole is reverse drilled, the ejected debris, plasma and gases do not cause the hole to be widened as it is drilled, and good parallelism and high uniformity of bore size can thus be obtained
- the refractive index of the material being drilled is dependent on the intensity of the beam falling on it It is well known that at very high field intensities, the refractive index rises with field intensity Since the intensity of the beam is higher in the center of the hole than at its edges, the refractive index is also higher in the center As a result, a self-focusing effect takes place as the drilling proceeds, and this mechanism assists in keeping the hole parallel and of accurately contained size through its whole length
- 3 ⁇ m holes can be typically drilled right through a 0 5 mm thickness of glass
- Such holes are, to the best of the applicants' knowledge, a complete order of magnitude smaller than those capable of being produced by previously available techniques, and can thus be used, for instance, for the production of high-strength micron-pored filter elements in materials such as glass and quartz
- a method of microscopic cutting of such transparent materials whereby a number of holes are drilled sufficiently closely spaced to each other, that adjacent bores run into each other, resulting in the production of a continuous cut channel according to a predetermined path
- the focused laser beam is made to execute multiple traverses of the material to be cut, according to a predetermined path, the first traverse being at the surface of the material, and then slowly working down through the material with a sawing motion, to produce a complete cut channel, which can extend right through the thickness of the material if desired
- the cut can be commenced at the far surface of the sample, and the sawed channel moved up through the sample towards the laser impingement surface.
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU14080/00A AU1408000A (en) | 1998-12-03 | 1999-12-02 | Material processing applications of lasers using optical breakdown |
DE19983782T DE19983782T1 (en) | 1998-12-03 | 1999-12-02 | Application of lasers for material processing using optical breakdown |
GB0113167A GB2360008A (en) | 1998-12-03 | 1999-12-02 | Material processing applications of lasers using optical breakdown |
CA002352868A CA2352868A1 (en) | 1998-12-03 | 1999-12-02 | Material processing applications of lasers using optical breakdown |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IL127388 | 1998-12-03 | ||
IL12738898A IL127388A0 (en) | 1998-12-03 | 1998-12-03 | Material processing applications of lasers using optical breakdown |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2000032349A1 true WO2000032349A1 (en) | 2000-06-08 |
Family
ID=11072219
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/IL1999/000655 WO2000032349A1 (en) | 1998-12-03 | 1999-12-02 | Material processing applications of lasers using optical breakdown |
Country Status (6)
Country | Link |
---|---|
AU (1) | AU1408000A (en) |
CA (1) | CA2352868A1 (en) |
DE (1) | DE19983782T1 (en) |
GB (1) | GB2360008A (en) |
IL (1) | IL127388A0 (en) |
WO (1) | WO2000032349A1 (en) |
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10122335C1 (en) * | 2001-05-08 | 2002-07-25 | Schott Glas | Process for marking glass comprises selecting the marking position along a drawing process having a glass transition temperature above the transformation temperature |
DE10140578A1 (en) * | 2001-08-18 | 2003-02-27 | Munser Norbert | Method for cutting complex profiled shapes from transparent materials uses focussed laser radiation to reduce the amount of waste material |
US7284396B2 (en) * | 2005-03-01 | 2007-10-23 | International Gemstone Registry Inc. | Method and system for laser marking in the volume of gemstones such as diamonds |
CN101670493A (en) * | 2000-09-13 | 2010-03-17 | 浜松光子学株式会社 | Laser processing method and laser processing apparatus |
US20110073563A1 (en) * | 2009-09-25 | 2011-03-31 | Industrial Technology Research Institute | Patterning Method for Carbon-Based Substrate |
US8470214B2 (en) * | 2003-05-30 | 2013-06-25 | Siemens Medical Solutions Usa, Inc. | Method for fabrication of a detector component using laser technology |
US8865566B2 (en) | 2002-12-03 | 2014-10-21 | Hamamatsu Photonics K.K. | Method of cutting semiconductor substrate |
US8872870B2 (en) | 2010-09-02 | 2014-10-28 | Schott Ag | Method and apparatus for marking glass |
US8969752B2 (en) | 2003-03-12 | 2015-03-03 | Hamamatsu Photonics K.K. | Laser processing method |
US9142458B2 (en) | 2002-03-12 | 2015-09-22 | Hamamatsu Photonics K.K. | Substrate dividing method |
US10562130B1 (en) | 2018-12-29 | 2020-02-18 | Cree, Inc. | Laser-assisted method for parting crystalline material |
US10576585B1 (en) | 2018-12-29 | 2020-03-03 | Cree, Inc. | Laser-assisted method for parting crystalline material |
US10611052B1 (en) | 2019-05-17 | 2020-04-07 | Cree, Inc. | Silicon carbide wafers with relaxed positive bow and related methods |
US11024501B2 (en) | 2018-12-29 | 2021-06-01 | Cree, Inc. | Carrier-assisted method for parting crystalline material along laser damage region |
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US5206496A (en) * | 1990-08-15 | 1993-04-27 | United Distillers, Plc | Sub-surface marking |
US5575936A (en) * | 1992-12-18 | 1996-11-19 | Firebird Traders Ltd. | Process and apparatus for etching an image within a solid article |
US5582752A (en) * | 1993-12-17 | 1996-12-10 | Laser Industries, Ltd. | Method and apparatus for applying laser beams to a working surface, particularly for ablating tissue |
US5656186A (en) * | 1994-04-08 | 1997-08-12 | The Regents Of The University Of Michigan | Method for controlling configuration of laser induced breakdown and ablation |
US5786560A (en) * | 1995-03-31 | 1998-07-28 | Panasonic Technologies, Inc. | 3-dimensional micromachining with femtosecond laser pulses |
-
1998
- 1998-12-03 IL IL12738898A patent/IL127388A0/en unknown
-
1999
- 1999-12-02 GB GB0113167A patent/GB2360008A/en not_active Withdrawn
- 1999-12-02 DE DE19983782T patent/DE19983782T1/en not_active Withdrawn
- 1999-12-02 WO PCT/IL1999/000655 patent/WO2000032349A1/en active Application Filing
- 1999-12-02 AU AU14080/00A patent/AU1408000A/en not_active Abandoned
- 1999-12-02 CA CA002352868A patent/CA2352868A1/en not_active Abandoned
Patent Citations (5)
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US5206496A (en) * | 1990-08-15 | 1993-04-27 | United Distillers, Plc | Sub-surface marking |
US5575936A (en) * | 1992-12-18 | 1996-11-19 | Firebird Traders Ltd. | Process and apparatus for etching an image within a solid article |
US5582752A (en) * | 1993-12-17 | 1996-12-10 | Laser Industries, Ltd. | Method and apparatus for applying laser beams to a working surface, particularly for ablating tissue |
US5656186A (en) * | 1994-04-08 | 1997-08-12 | The Regents Of The University Of Michigan | Method for controlling configuration of laser induced breakdown and ablation |
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US8470214B2 (en) * | 2003-05-30 | 2013-06-25 | Siemens Medical Solutions Usa, Inc. | Method for fabrication of a detector component using laser technology |
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US7284396B2 (en) * | 2005-03-01 | 2007-10-23 | International Gemstone Registry Inc. | Method and system for laser marking in the volume of gemstones such as diamonds |
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US8872870B2 (en) | 2010-09-02 | 2014-10-28 | Schott Ag | Method and apparatus for marking glass |
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Publication number | Publication date |
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CA2352868A1 (en) | 2000-06-08 |
IL127388A0 (en) | 1999-10-28 |
DE19983782T1 (en) | 2001-10-18 |
AU1408000A (en) | 2000-06-19 |
GB2360008A (en) | 2001-09-12 |
GB0113167D0 (en) | 2001-07-25 |
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