WO2000031819A1 - Method and apparatus for switching high frequency signals - Google Patents
Method and apparatus for switching high frequency signals Download PDFInfo
- Publication number
- WO2000031819A1 WO2000031819A1 PCT/US1999/025643 US9925643W WO0031819A1 WO 2000031819 A1 WO2000031819 A1 WO 2000031819A1 US 9925643 W US9925643 W US 9925643W WO 0031819 A1 WO0031819 A1 WO 0031819A1
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- WIPO (PCT)
- Prior art keywords
- dielectric material
- switch
- membrane
- providing
- resistivity
- Prior art date
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/10—Auxiliary devices for switching or interrupting
- H01P1/12—Auxiliary devices for switching or interrupting by mechanical chopper
- H01P1/127—Strip line switches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G5/00—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture
- H01G5/16—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture using variation of distance between electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G5/00—Capacitors in which the capacitance is varied by mechanical means, e.g. by turning a shaft; Processes of their manufacture
- H01G5/40—Structural combinations of variable capacitors with other electric elements not covered by this subclass, the structure mainly consisting of a capacitor, e.g. RC combinations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H59/00—Electrostatic relays; Electro-adhesion relays
- H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics
- H01H2059/0018—Special provisions for avoiding charge trapping, e.g. insulation layer between actuating electrodes being permanently polarised by charge trapping so that actuating or release voltage is altered
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H59/00—Electrostatic relays; Electro-adhesion relays
- H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics
Definitions
- This invention relates generally to electronic devices and more particularly to a method and apparatus for switching high frequency signals.
- Microelectromechanical microwave (MEMS) capacitive switches can be used for switching high frequency signals .
- MEMS microwave capacitive switches are described in U.S. Patent 5,619,061 entitled, Micromechanical Microwave Swi tching, which is incorporated herein by reference. Such switches may be used for functions such as beam steering in a phased array radar.
- MEMS capacitive switches generally are low loss devices because they include no active semiconductor components. The lack of active semiconductor components also makes MEMS capacitive switches relatively inexpensive.
- microelectromechanical microwave capacitive switches show an inability to remain in a switched on position for more than a few seconds at low frequency bias voltages and show a bipolar response when exposed to high- frequency bias voltages.
- Bipolar response refers to switching on at both zero and positive bias.
- a method of forming a switch includes providing a conductive region, a membrane, and a dielectric material.
- the method includes disposing a region of the dielectric material between the conductive region and the membrane such that a sufficient voltage applied between the conductive region and the membrane effects a capacitive coupling between the membrane and the conductive region.
- the dielectric material has a resistivity sufficiently low to inhibit charge accumulation in the dielectric region during application of the voltage.
- a switch includes a conductive region, a membrane, and a dielectric region.
- the dielectric region is formed from a dielectric material and is disposed between the membrane and the conductive region. When a sufficient voltage is applied between the conductive region and the membrane, a capacitive coupling between the membrane and the conductive region is effected.
- the dielectric material has a resistivity sufficiently low to inhibit charging in the dielectric region during operation of the switch.
- Embodiments of the invention provide numerous technical advantages. For example, in one embodiment of the invention, a switch is provided that does not suffer from bipolar operation in response to high frequency stimulus and does not turn off inadvertently when it should be turned on in response to low frequency stimulus, which are disadvantages associated with some prior devices . Further, according to the invention, a switch is provided that can be repeatedly activated in response to a bias voltage having a fairly constant magnitude. Such switches provide more reliable operation and are desirable. Other technical advantages are readily apparent to one skilled in the art from the following figures, descriptions, and claims .
- FIGURE 1 is a schematic drawing illustrating a top view of a microelectromechanical microwave capacitive switch according to the teachings of the present invention
- FIGURE 2 is a side view of the microelectromechanical microwave capacitive switch illustrated in FIGURE 1 in an undeflected position
- FIGURE 3 is a schematic drawing illustrating the microelectromechanical microwave capacitive switch of
- FIGURE 1 in a deflected position
- FIGURE 4 is a circuit diagram illustrating an effective electrical circuit at high frequency of the microelectromechanical microwave capacitive switch illustrated in FIGURES 1 through 3;
- FIGURES 5A through 5C are a series of graphs illustrating a desired response and a conventional response for microelectromechanical microwave capacitive switches for high frequency stimulus;
- FIGURES 6A through 6C are a series of graphs showing a desired response and a conventional response for microelectromechanical microwave capacitive switches in response to a low frequency stimulus;
- FIGURES 7A through 7B are a series of graphs of switch repetition versus bias voltage illustrating an increasing bias voltage required with switch repetitions.
- FIGURES 8A through 8C are a series of schematic drawings illustrating the formation of electric fields between a membrane and an electrode of the microelectromechanical microwave capacitive switch of FIGURE 1.
- FIGURES 1 through 8 of the drawings like numerals being used for like and corresponding parts of the various drawings.
- FIGURES 1 through 3 are schematic drawings illustrating one embodiment of a microelectromechanical microwave (MEMS) capacitive switch 10 according to the teachings of the present invention.
- FIGURE 1 shows a top view of switch 10.
- FIGURE 2 shows a side view along the lines 2-2 of FIGURE 1 for an undeflected position.
- FIGURE 3 shows a side view along lines 2-2 of FIGURE 1 for a deflected position.
- Switch 10 includes membrane posts 12 and 14.
- Membrane post 12 and 14 are generally formed from any suitable conductive material; however, membrane posts 12 and 14 may also be insulative if desired.
- Electrode 16 is connected to, or forms a part of, a transmission line 22. Transmission line 22 carries a high frequency signal.
- dielectric region 18 is formed from silicon nitride (Si 3 N 4 ) . However, any suitable dielectric may be used. As described in greater detail below, dielectric region 18 is formed from a dielectric material having a sufficiently low resistivity to inhibit charge accumulation within dielectric region 18.
- a membrane 20 is disposed between membrane support posts 12 and 14, as best illustrated in FIGURE 2. Membrane 20 is connected to a reference voltage, such as ground. According to one embodiment, membrane 20 is formed from a conductive material. A gap 19 exist between membrane 20 and dielectric region 18, as illustrated in FIGURE 2. In one embodiment, membrane posts 12 and 14, electrode 16, dielectric region 18, and membrane 20 are formed overlying a substrate 24.
- FIGURE 4 is a simplified circuit diagram illustrating an effective circuit of microelectromechanical microwave capacitive switch 10. As illustrated, when microelectromechanical microwave capacitive switch 10 is closed, signals along transmission line 22 are shorted to ground. This closing of microelectromechanical switch 10 corresponds to the position of membrane 20 illustrated in FIGURE 3. As described above, this positioning of membrane 20 is effected by application of a bias voltage between electrode 16 and membrane 20.
- the invention recognizes that, during application of a bias voltage, charge tends to be injected from either membrane 20 or electrode 16 into dielectric region 18. This charge, once injected, occupies trap sites within dielectric region 18 and creates a shielding effect that effectively lowers the electric field between electrode 16 and membrane 20. When the injected charge reaches sufficient levels, the electrostatic attraction between electrode 16 and membrane 20 is neutralized and membrane 20 returns to its rest, or up position. This results in a spontaneous and undesired release of microelectromechanical microwave capacitive switch 10. According to the teachings of the invention, reducing the resistivity of the material used for dielectric region 18 inhibits charge accumulation and effects a more desirable microelectromechanical microwave mechanical capacitive switch.
- FIGURES 5A through 5C are a series of graphs illustrating the position of a microelectromechanical microwave capacitive switch in response to a high frequency stimulus.
- Curve 26 in FIGURE 5A represents a high frequency stimulus for a bias voltage applied between electrode 16 and membrane 20.
- Curve 28 in FIGURE 5B illustrates a desired response of microelectromechanical microwave capacitive switch 10.
- an "Up" position indicates that membrane 20 is as illustrated in FIGURE 2 and a gap 19 is maintained between membrane 20 and dielectric region 18. In such a position, microelectromechanical microwave capacitive switch 10 allows signals to flow along transmission line 22.
- microelectromechanical microwave capacitive switch 10 Conversely, a "Dn" position indicates that microelectromechanical microwave capacitive switch 10 is in a down position, being in contact with dielectric region 18. In such a position, microelectromechanical microwave capacitive switch 10 shorts high frequency signals to ground and therefore halts transmission of high frequency signals along transmission line 22.
- Desired response curve 28 shows that microelectromechanical microwave capacitive switch is in a "Dn" position only when an appropriate bias voltage is applied between electrode 16 and membrane 20, corresponding to closing of the switch.
- Curve 30 in FIGURE 5C illustrates a problem that occurs in some conventional microelectromechanical microwave capacitive switches. With operation as shown by curve 30, the switch toggles at a rate equal to twice the desired rate. This operation is undesirable.
- the invention recognizes that the behavior of some conventional microelectromechanical microwave capacitive switches as exhibited by curve 30 occurs due to charge injection and accumulation, which is described in greater detail below in conjunction with FIGURES 8A through 8C.
- FIGURES 6A through 6C are a series of graphs illustrating the operation of microelectromechanical microwave capacitive switches in response to a low frequency stimulus.
- Curve 32 in FIGURE 6A illustrates an example of low frequency stimulus in which a positive bias voltage applied between electrodes 16 and membrane 20 generates the desired response illustrated by curve 34, shown in FIGURE 6B .
- Curve 36 in FIGURE 6C illustrates a response resulting from some conventional microelectromechanical microwave capacitive switches in which the membrane of the microelectromechanical switch toggles back to an up position when it should be in a down position. Thus, after some period of time, the membrane returns to an "Up" position even when a bias voltage is maintained.
- the invention recognizes that the behavior of some conventional microelectromechanical microwave capacitive switches as exhibited by curve 36 occurs due to charge injection and accumulation, which is described in greater detail in conjunction with FIGURES 8A through 8C.
- FIGURES 7A and 7B are a series of graphs showing switch repetitions versus bias voltage.
- curve 38 in FIGURE 7A the voltage required to displace membrane 20 downward to contact dielectric region 18 is illustrated as a function of the number of switch repetitions.
- the bias voltage required to effect such contact increases as the number of times the switch is opened and closed increases.
- curve 40 in FIGURE 7B the bias voltage required to displace membrane 20 to contact dielectric region 18 remains fairly constant after a few switch repetitions.
- the behavior as illustrated by curve 38 is also attributed to charge injection and accumulation.
- an external electric field due to a bias voltage applied between electrode 16 and membrane 20 has the same magnitude as the total electric field between electrode 16 and membrane 20 because there is no internally generated electric field within dielectric region 18.
- electrical charges begin to accumulate within dielectric region 18. These electrical charges are injected into dielectric region 19 due to the applied bias voltage. These electrical charges generate an internal electric field that opposes the externally applied electric field.
- the total electric field between membrane 20 and electrode 16 is reduced.
- the total electric field between membrane 20 and electrode 16 is reduced to an extent that membrane 20 will return to an "open" position.
- Charge accumulation is also responsible for the behavior of conventional microelectromechanical microwave mechanical capacitive switches in response to low frequency stimulation as exhibited by curve 38 in FIGURE 7A.
- a bias voltage is applied between membrane 20 and electrode 16
- a little more charge is injected into dielectric region 18.
- This additional charge creates a stronger electric field opposing an externally applied electric field resulting from the bias voltage. Therefore, to attain an electric field sufficient to displace membrane 20 to contact dielectric region 18, a greater bias voltage is required for each successive switch repetition.
- Charge accumulation is also responsible for the behavior of conventional microelectromechanical microwave mechanical capacitive switches in response to high frequency stimulation as exhibited by curve 30 in FIGURE 5C. This phenomena, which results in switching at twice the desired frequency, occurs due to charge accumulation resulting from charge injection by application of a bias voltage.
- a bias voltage Upon application of a bias voltage, charge is injected into dielectric region 18. The bias voltage then returns to zero at a desired time, but the accumulated charge creates a net electric field in dielectric region 18. This net electric field causes a potential difference between electrode 16 and membrane 20, which causes membrane 20 to again displace toward electrode 16. This displacement occurs even though the externally applied bias voltage is zero. Therefore, switching occurs at twice the desired rate. This operation is referred to as bipolar operation.
- dielectric region 18 is deposited with a material having an increased conductivity, or decreased resistivity, to inhibit charge accumulation in dielectric region 18 during operation of switch 10.
- inhibit charge accumulation refers to preventing charge accumulation to an extent that microelectromechanical microwave mechanical capacitative switches, during standard operating conditions, generally do not exhibit bipolar response in response to high frequency stimulus or generally do not switch to an "Up” position when they should be in a "Dn” position in response to low frequency stimulus, but not necessarily both. Thus inhibition of charge accumulation occurs if one or more of these two behaviors is generally prevented.
- dielectric layer 18 may be intentionally doped with an external dopant; the internal stoichiometry may be modified; pre or post processing steps can be introduced or modified; or other suitable techniques that increase the conductivity of dielectric region 18 may be utilized.
- dielectric layer 18 may be intentionally doped with an external dopant; the internal stoichiometry may be modified; pre or post processing steps can be introduced or modified; or other suitable techniques that increase the conductivity of dielectric region 18 may be utilized.
- silicon nitride (Si 3 N 4 ) is deposited stoichiometrically by plasma enhanced chemical vapor deposition.
- the conductivity of SiN is sensitive to the Si/N ratio.
- the resistivity of the silicon nitride used to form dielectric region 18 was reduced from lxlO 11 to lxlO 7 Ohm-cm. This resistivity occurs in the presence of an electrical field having a magnitude of 200 kilovolts per centimeter.
Abstract
Description
Claims
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU13354/00A AU1335400A (en) | 1998-11-25 | 1999-11-01 | Method and apparatus for switching high frequency signals |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
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US10978498P | 1998-11-25 | 1998-11-25 | |
US60/109,784 | 1998-11-25 | ||
US09/394,997 US6391675B1 (en) | 1998-11-25 | 1999-09-13 | Method and apparatus for switching high frequency signals |
US09/394,997 | 1999-09-13 |
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WO2000031819A1 true WO2000031819A1 (en) | 2000-06-02 |
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PCT/US1999/025643 WO2000031819A1 (en) | 1998-11-25 | 1999-11-01 | Method and apparatus for switching high frequency signals |
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US (2) | US6391675B1 (en) |
AU (1) | AU1335400A (en) |
WO (1) | WO2000031819A1 (en) |
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US7161273B2 (en) | 2001-11-06 | 2007-01-09 | Omron Corporation | Antistatic mechanism of an electrostatic actuator |
US7960662B2 (en) | 2006-05-31 | 2011-06-14 | Thales | Radiofrequency or hyperfrequency micro-switch structure and method for producing one such structure |
FR2901781A1 (en) * | 2006-05-31 | 2007-12-07 | Thales Sa | RADIOFREQUENCY OR HYPERFREQUENCY MICRO-SWITCH STRUCTURE AND METHOD OF MANUFACTURING SUCH STRUCTURE |
WO2007138102A1 (en) * | 2006-05-31 | 2007-12-06 | Thales | Radiofrequency or hyperfrequency micro switch structure and method for producing one such structure |
EP1950778A3 (en) * | 2007-01-24 | 2009-03-11 | Fujitsu Ltd. | Drive control method and unit for micro machine device |
US7961448B2 (en) | 2007-01-24 | 2011-06-14 | Fujitsu Limited | Drive control method and unit for micro machine device |
US7903386B2 (en) | 2007-03-30 | 2011-03-08 | Fujitsu Limited | Apparatus and method for drive controlling micro machine device |
WO2010092406A3 (en) * | 2009-02-13 | 2011-05-26 | Wolfson Microelectronics Plc | Mems device with leakage path |
CN102356042A (en) * | 2009-02-13 | 2012-02-15 | 沃福森微电子股份有限公司 | Mems device and process |
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EP2495866A1 (en) * | 2011-03-04 | 2012-09-05 | Commissariat à l'Énergie Atomique et aux Énergies Alternatives | Electrostatic actuator of a mobile structure with improved relief of trapped charges |
FR2972315A1 (en) * | 2011-03-04 | 2012-09-07 | Commissariat Energie Atomique | ELECTROSTATIC ACTUATOR OF A MOBILE STRUCTURE WITH IMPROVED RELAXATION OF TRAPPED LOADS |
US8860283B2 (en) | 2011-03-04 | 2014-10-14 | Commissariat a l'Energie et aux Energies Alternatives | Electrostatic actuator of a mobile structure with improved relaxation of trapped charges |
Also Published As
Publication number | Publication date |
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US6700172B2 (en) | 2004-03-02 |
US20020036304A1 (en) | 2002-03-28 |
AU1335400A (en) | 2000-06-13 |
US6391675B1 (en) | 2002-05-21 |
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