WO2000028664A3 - Fully integrated tuner architecture - Google Patents
Fully integrated tuner architecture Download PDFInfo
- Publication number
- WO2000028664A3 WO2000028664A3 PCT/US1999/026700 US9926700W WO0028664A3 WO 2000028664 A3 WO2000028664 A3 WO 2000028664A3 US 9926700 W US9926700 W US 9926700W WO 0028664 A3 WO0028664 A3 WO 0028664A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- frequency
- filter
- filters
- receiver
- image
- Prior art date
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- 238000001914 filtration Methods 0.000 abstract 1
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000010355 oscillation Effects 0.000 abstract 1
- 230000008054 signal transmission Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 238000003786 synthesis reaction Methods 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D3/00—Demodulation of angle-, frequency- or phase- modulated oscillations
- H03D3/02—Demodulation of angle-, frequency- or phase- modulated oscillations by detecting phase difference between two signals obtained from input signal
- H03D3/18—Demodulation of angle-, frequency- or phase- modulated oscillations by detecting phase difference between two signals obtained from input signal by means of synchronous gating arrangements
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- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F17/00—Fixed inductances of the signal type
- H01F17/0006—Printed inductances
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5227—Inductive arrangements or effects of, or between, wiring layers
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
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- H—ELECTRICITY
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
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- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/02—Details
- H03B5/04—Modifications of generator to compensate for variations in physical values, e.g. power supply, load, temperature
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- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/30—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator
- H03B5/32—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator
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- H03B5/364—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element being electromechanical resonator being a piezoelectric resonator active element in amplifier being semiconductor device the amplifier comprising field effect transistors
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- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/16—Multiple-frequency-changing
- H03D7/161—Multiple-frequency-changing all the frequency changers being connected in cascade
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- H03D7/18—Modifications of frequency-changers for eliminating image frequencies
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- H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/195—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
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- H03F3/45188—Non-folded cascode stages
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- H03F3/68—Combinations of amplifiers, e.g. multi-channel amplifiers for stereophonics
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- H03G—CONTROL OF AMPLIFICATION
- H03G1/00—Details of arrangements for controlling amplification
- H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
- H03G1/0017—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid state elements of the amplifier
- H03G1/0023—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid state elements of the amplifier in emitter-coupled or cascode amplifiers
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- H03G1/0017—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid state elements of the amplifier
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- H03G3/00—Gain control in amplifiers or frequency changers without distortion of the input signal
- H03G3/20—Automatic control
- H03G3/30—Automatic control in amplifiers having semiconductor devices
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- H03J—TUNING RESONANT CIRCUITS; SELECTING RESONANT CIRCUITS
- H03J1/00—Details of adjusting, driving, indicating, or mechanical control arrangements for resonant circuits in general
- H03J1/0008—Details of adjusting, driving, indicating, or mechanical control arrangements for resonant circuits in general using a central processing unit, e.g. a microprocessor
- H03J1/0058—Details of adjusting, driving, indicating, or mechanical control arrangements for resonant circuits in general using a central processing unit, e.g. a microprocessor provided with channel identification means
- H03J1/0066—Details of adjusting, driving, indicating, or mechanical control arrangements for resonant circuits in general using a central processing unit, e.g. a microprocessor provided with channel identification means with means for analysing the received signal strength
- H03J1/0075—Details of adjusting, driving, indicating, or mechanical control arrangements for resonant circuits in general using a central processing unit, e.g. a microprocessor provided with channel identification means with means for analysing the received signal strength where the receiving frequencies of the stations are stored in a permanent memory, e.g. ROM
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- H03J—TUNING RESONANT CIRCUITS; SELECTING RESONANT CIRCUITS
- H03J3/00—Continuous tuning
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- H03J—TUNING RESONANT CIRCUITS; SELECTING RESONANT CIRCUITS
- H03J3/00—Continuous tuning
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- H03J3/08—Arrangements for obtaining constant bandwidth or gain throughout tuning range or ranges by varying a second parameter simultaneously with the tuning, e.g. coupling bandpass filter
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- H03J—TUNING RESONANT CIRCUITS; SELECTING RESONANT CIRCUITS
- H03J3/00—Continuous tuning
- H03J3/02—Details
- H03J3/16—Tuning without displacement of reactive element, e.g. by varying permeability
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- H03J3/185—Tuning without displacement of reactive element, e.g. by varying permeability by discharge tube or semiconductor device simulating variable reactance with varactors, i.e. voltage variable reactive diodes
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- H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION, OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
- H03L7/00—Automatic control of frequency or phase; Synchronisation
- H03L7/06—Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop
- H03L7/08—Details of the phase-locked loop
- H03L7/10—Details of the phase-locked loop for assuring initial synchronisation or for broadening the capture range
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- H03L7/102—Details of the phase-locked loop for assuring initial synchronisation or for broadening the capture range using an additional control signal to the controlled loop oscillator derived from a signal generated in the loop the additional signal being directly applied to the controlled loop oscillator
- H03L7/103—Details of the phase-locked loop for assuring initial synchronisation or for broadening the capture range using an additional control signal to the controlled loop oscillator derived from a signal generated in the loop the additional signal being directly applied to the controlled loop oscillator the additional signal being a digital signal
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- H03L7/06—Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop
- H03L7/16—Indirect frequency synthesis, i.e. generating a desired one of a number of predetermined frequencies using a frequency- or phase-locked loop
- H03L7/18—Indirect frequency synthesis, i.e. generating a desired one of a number of predetermined frequencies using a frequency- or phase-locked loop using a frequency divider or counter in the loop
- H03L7/183—Indirect frequency synthesis, i.e. generating a desired one of a number of predetermined frequencies using a frequency- or phase-locked loop using a frequency divider or counter in the loop a time difference being used for locking the loop, the counter counting between fixed numbers or the frequency divider dividing by a fixed number
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- H03L7/06—Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop
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- H01F27/34—Special means for preventing or reducing unwanted electric or magnetic effects, e.g. no-load losses, reactive currents, harmonics, oscillations, leakage fields
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- H03F2203/45286—Indexing scheme relating to differential amplifiers the temperature dependence of a differential amplifier being controlled
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- H03J—TUNING RESONANT CIRCUITS; SELECTING RESONANT CIRCUITS
- H03J2200/00—Indexing scheme relating to tuning resonant circuits and selecting resonant circuits
- H03J2200/10—Tuning of a resonator by means of digitally controlled capacitor bank
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- H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION, OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
- H03L2207/00—Indexing scheme relating to automatic control of frequency or phase and to synchronisation
- H03L2207/06—Phase locked loops with a controlled oscillator having at least two frequency control terminals
Abstract
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP99965786A EP1145430B1 (en) | 1998-11-12 | 1999-11-12 | Integrated tuner architecture |
AU21479/00A AU2147900A (en) | 1998-11-12 | 1999-11-12 | Fully integrated tuner architecture |
DE69920273T DE69920273T2 (en) | 1998-11-12 | 1999-11-12 | INTEGRATED TUNER ARCHITECTURE |
AT99965786T ATE276605T1 (en) | 1998-11-12 | 1999-11-12 | INTEGRATED TUNER ARCHITECTURE |
Applications Claiming Priority (16)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10821098P | 1998-11-12 | 1998-11-12 | |
US10820998P | 1998-11-12 | 1998-11-12 | |
US10845998P | 1998-11-12 | 1998-11-12 | |
US60/108,210 | 1998-11-12 | ||
US60/108,459 | 1998-11-12 | ||
US60/108,209 | 1998-11-12 | ||
US11760999P | 1999-01-28 | 1999-01-28 | |
US60/117,609 | 1999-01-28 | ||
US13611599P | 1999-05-26 | 1999-05-26 | |
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- 1999-11-12 US US09/439,101 patent/US7092043B2/en not_active Expired - Lifetime
- 1999-11-12 US US09/438,234 patent/US6285865B1/en not_active Expired - Lifetime
- 1999-11-12 EP EP99965786A patent/EP1145430B1/en not_active Expired - Lifetime
- 1999-11-12 AT AT99965786T patent/ATE276605T1/en not_active IP Right Cessation
- 1999-11-12 US US09/438,687 patent/US6879816B2/en not_active Expired - Fee Related
- 1999-11-12 US US09/439,156 patent/US6504420B1/en not_active Expired - Fee Related
- 1999-11-12 US US09/439,102 patent/US6377315B1/en not_active Expired - Fee Related
- 1999-11-12 WO PCT/US1999/026700 patent/WO2000028664A2/en active IP Right Grant
- 1999-11-12 AU AU21479/00A patent/AU2147900A/en not_active Abandoned
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2001
- 2001-01-19 US US09/766,048 patent/US7236212B2/en not_active Expired - Fee Related
- 2001-01-29 US US09/771,525 patent/US6549766B2/en not_active Expired - Lifetime
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2002
- 2002-04-01 US US10/109,692 patent/US20020140869A1/en not_active Abandoned
- 2002-11-25 US US10/302,917 patent/US7109781B2/en not_active Expired - Lifetime
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2003
- 2003-03-17 US US10/388,398 patent/US6865381B2/en not_active Expired - Lifetime
- 2003-05-19 US US10/440,085 patent/US7366486B2/en not_active Expired - Fee Related
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2004
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2005
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2006
- 2006-03-31 US US11/393,899 patent/US7423699B2/en not_active Expired - Fee Related
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2007
- 2007-01-26 US US11/698,162 patent/US7729676B2/en not_active Expired - Fee Related
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2008
- 2008-07-30 US US12/219,925 patent/US7821581B2/en not_active Expired - Fee Related
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2010
- 2010-05-28 US US12/789,928 patent/US8195117B2/en not_active Expired - Fee Related
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN111199891A (en) * | 2018-11-01 | 2020-05-26 | 长江存储科技有限责任公司 | Integrated circuit electrostatic discharge bus structure and related method |
CN111199891B (en) * | 2018-11-01 | 2021-03-12 | 长江存储科技有限责任公司 | Integrated circuit electrostatic discharge bus structure and related method |
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