WO2000018979A8 - Sputter deposition apparatus - Google Patents
Sputter deposition apparatusInfo
- Publication number
- WO2000018979A8 WO2000018979A8 PCT/US1999/022887 US9922887W WO0018979A8 WO 2000018979 A8 WO2000018979 A8 WO 2000018979A8 US 9922887 W US9922887 W US 9922887W WO 0018979 A8 WO0018979 A8 WO 0018979A8
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- sputter deposition
- deposition chamber
- deposition apparatus
- magnetrons
- substrate
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3426—Material
- H01J37/3429—Plural materials
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/027—Graded interfaces
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
- C23C14/566—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases using a load-lock chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/568—Transferring the substrates through a series of coating stations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
Abstract
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000572424A JP2002525437A (en) | 1998-10-01 | 1999-10-01 | Sputter deposition equipment |
EP99969749A EP1117850A1 (en) | 1998-10-01 | 1999-10-01 | Sputter deposition apparatus |
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10261098P | 1998-10-01 | 1998-10-01 | |
US60/102,610 | 1998-10-01 | ||
US11672199P | 1999-01-21 | 1999-01-21 | |
US60/116,721 | 1999-01-21 | ||
US09/401,754 | 1999-09-23 | ||
US09/401,754 US6328858B1 (en) | 1998-10-01 | 1999-09-23 | Multi-layer sputter deposition apparatus |
Publications (3)
Publication Number | Publication Date |
---|---|
WO2000018979A1 WO2000018979A1 (en) | 2000-04-06 |
WO2000018979A8 true WO2000018979A8 (en) | 2000-08-17 |
WO2000018979A9 WO2000018979A9 (en) | 2002-04-25 |
Family
ID=27379377
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US1999/022887 WO2000018979A1 (en) | 1998-10-01 | 1999-10-01 | Sputter deposition apparatus |
Country Status (4)
Country | Link |
---|---|
US (1) | US6328858B1 (en) |
EP (1) | EP1117850A1 (en) |
JP (1) | JP2002525437A (en) |
WO (1) | WO2000018979A1 (en) |
Families Citing this family (26)
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US9051211B2 (en) * | 2004-04-27 | 2015-06-09 | Ppg Industries Ohio, Inc. | Effects of methods of manufacturing sputtering targets on characteristics of coatings |
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US20060231388A1 (en) * | 2005-04-14 | 2006-10-19 | Ravi Mullapudi | Multi-station sputtering and cleaning system |
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US8236152B2 (en) * | 2006-11-24 | 2012-08-07 | Ascentool International Ltd. | Deposition system |
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US20160237555A1 (en) * | 2013-10-24 | 2016-08-18 | Meyer Burger (Germany) Ag | Multi-Magnetron Arrangement |
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CN113614274A (en) | 2019-03-22 | 2021-11-05 | 应用材料公司 | Method and apparatus for depositing multilayer device with superconducting film |
TWI753759B (en) | 2020-02-03 | 2022-01-21 | 美商應用材料股份有限公司 | Snspd with integrated aluminum nitride seed or waveguide layer |
TWI780579B (en) | 2020-02-03 | 2022-10-11 | 美商應用材料股份有限公司 | Snspd with integrated aluminum nitride seed or waveguide layer |
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US5844195A (en) | 1996-11-18 | 1998-12-01 | Applied Materials, Inc. | Remote plasma source |
US5833426A (en) | 1996-12-11 | 1998-11-10 | Applied Materials, Inc. | Magnetically coupled wafer extraction platform |
US5795355A (en) | 1996-12-24 | 1998-08-18 | Applied Materials, Inc. | Integrated micro-environment container loader apparatus having a semipermeable barrier |
US5861086A (en) | 1997-03-10 | 1999-01-19 | Applied Materials, Inc. | Method and apparatus for sputter etch conditioning a ceramic body |
-
1999
- 1999-09-23 US US09/401,754 patent/US6328858B1/en not_active Expired - Lifetime
- 1999-10-01 EP EP99969749A patent/EP1117850A1/en not_active Withdrawn
- 1999-10-01 WO PCT/US1999/022887 patent/WO2000018979A1/en not_active Application Discontinuation
- 1999-10-01 JP JP2000572424A patent/JP2002525437A/en not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
JP2002525437A (en) | 2002-08-13 |
US6328858B1 (en) | 2001-12-11 |
EP1117850A1 (en) | 2001-07-25 |
WO2000018979A1 (en) | 2000-04-06 |
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