WO2000014775A3 - Multi-lamp cone reflector for semiconductor wafer heating - Google Patents
Multi-lamp cone reflector for semiconductor wafer heating Download PDFInfo
- Publication number
- WO2000014775A3 WO2000014775A3 PCT/IB1999/001710 IB9901710W WO0014775A3 WO 2000014775 A3 WO2000014775 A3 WO 2000014775A3 IB 9901710 W IB9901710 W IB 9901710W WO 0014775 A3 WO0014775 A3 WO 0014775A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- light energy
- heating cone
- reflector
- semiconductor wafer
- wafer
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
Abstract
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000569426A JP2002524871A (en) | 1998-09-09 | 1999-09-08 | Heating apparatus including a multi-lamp cone for heating a semiconductor wafer |
EP99968736A EP1116262A2 (en) | 1998-09-09 | 1999-09-08 | Heating device containing a multi-lamp cone for heating semiconductor wafers |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/150,280 US6210484B1 (en) | 1998-09-09 | 1998-09-09 | Heating device containing a multi-lamp cone for heating semiconductor wafers |
US09/150,280 | 1998-09-09 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2000014775A2 WO2000014775A2 (en) | 2000-03-16 |
WO2000014775A3 true WO2000014775A3 (en) | 2000-05-25 |
Family
ID=22533828
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/IB1999/001710 WO2000014775A2 (en) | 1998-09-09 | 1999-09-08 | Multi-lamp cone reflector for semiconductor wafer heating |
Country Status (6)
Country | Link |
---|---|
US (1) | US6210484B1 (en) |
EP (1) | EP1116262A2 (en) |
JP (1) | JP2002524871A (en) |
KR (1) | KR100629016B1 (en) |
TW (1) | TW419752B (en) |
WO (1) | WO2000014775A2 (en) |
Families Citing this family (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6108491A (en) * | 1998-10-30 | 2000-08-22 | Applied Materials, Inc. | Dual surface reflector |
JP4625183B2 (en) * | 1998-11-20 | 2011-02-02 | ステアーグ アール ティ ピー システムズ インコーポレイテッド | Rapid heating and cooling equipment for semiconductor wafers |
US6771895B2 (en) | 1999-01-06 | 2004-08-03 | Mattson Technology, Inc. | Heating device for heating semiconductor wafers in thermal processing chambers |
DE19923400A1 (en) * | 1999-05-21 | 2000-11-30 | Steag Rtp Systems Gmbh | Device and method for the thermal treatment of substrates |
TW546679B (en) * | 1999-05-21 | 2003-08-11 | Toshiba Corp | Heating method |
JP3450240B2 (en) * | 1999-11-25 | 2003-09-22 | Necエレクトロニクス株式会社 | Lamp annealing apparatus and processing temperature control method for lamp annealing apparatus |
US6554905B1 (en) * | 2000-04-17 | 2003-04-29 | Asm America, Inc. | Rotating semiconductor processing apparatus |
US7015422B2 (en) | 2000-12-21 | 2006-03-21 | Mattson Technology, Inc. | System and process for heating semiconductor wafers by optimizing absorption of electromagnetic energy |
US6970644B2 (en) * | 2000-12-21 | 2005-11-29 | Mattson Technology, Inc. | Heating configuration for use in thermal processing chambers |
US6902622B2 (en) * | 2001-04-12 | 2005-06-07 | Mattson Technology, Inc. | Systems and methods for epitaxially depositing films on a semiconductor substrate |
DE10222879A1 (en) * | 2001-05-23 | 2005-03-17 | Mattson Thermal Products Gmbh | Measurement of low wafer temperatures |
KR100432135B1 (en) * | 2001-06-30 | 2004-05-17 | 동부전자 주식회사 | Rapid thermal processing apparatus |
KR20030046217A (en) * | 2001-12-05 | 2003-06-12 | 한국과학기술연구원 | Heating device for heating wafer |
US6570137B1 (en) | 2002-03-04 | 2003-05-27 | Applied Materials, Inc. | System and method for lamp split zone control |
US6809801B2 (en) * | 2002-03-11 | 2004-10-26 | Sharp Laboratories Of America, Inc. | 1:1 projection system and method for laser irradiating semiconductor films |
US7734439B2 (en) * | 2002-06-24 | 2010-06-08 | Mattson Technology, Inc. | System and process for calibrating pyrometers in thermal processing chambers |
US7101812B2 (en) * | 2002-09-20 | 2006-09-05 | Mattson Technology, Inc. | Method of forming and/or modifying a dielectric film on a semiconductor surface |
US6835914B2 (en) * | 2002-11-05 | 2004-12-28 | Mattson Technology, Inc. | Apparatus and method for reducing stray light in substrate processing chambers |
US6947665B2 (en) * | 2003-02-10 | 2005-09-20 | Axcelis Technologies, Inc. | Radiant heating source with reflective cavity spanning at least two heating elements |
US7654596B2 (en) | 2003-06-27 | 2010-02-02 | Mattson Technology, Inc. | Endeffectors for handling semiconductor wafers |
US20080090309A1 (en) * | 2003-10-27 | 2008-04-17 | Ranish Joseph M | Controlled annealing method |
US8536492B2 (en) * | 2003-10-27 | 2013-09-17 | Applied Materials, Inc. | Processing multilayer semiconductors with multiple heat sources |
US20060291833A1 (en) * | 2005-06-01 | 2006-12-28 | Mattson Techonology, Inc. | Switchable reflector wall concept |
JP4940635B2 (en) * | 2005-11-14 | 2012-05-30 | 東京エレクトロン株式会社 | Heating device, heat treatment device and storage medium |
US20080072820A1 (en) * | 2006-06-30 | 2008-03-27 | Applied Materials, Inc. | Modular cvd epi 300mm reactor |
WO2012108882A1 (en) | 2011-02-11 | 2012-08-16 | Alliance For Sustainable Energy, Llc | Wafer screening device and methods for wafer screening |
US7976216B2 (en) * | 2007-12-20 | 2011-07-12 | Mattson Technology, Inc. | Determining the temperature of silicon at high temperatures |
EP2253012A4 (en) * | 2008-03-13 | 2013-10-16 | Alliance Sustainable Energy | Optical cavity furnace for semiconductor wafer processing |
JP5616006B2 (en) * | 2008-06-10 | 2014-10-29 | 大日本スクリーン製造株式会社 | Heat treatment equipment |
JPWO2011021549A1 (en) * | 2009-08-18 | 2013-01-24 | 東京エレクトロン株式会社 | Heat treatment equipment |
TW201122148A (en) * | 2009-12-24 | 2011-07-01 | Hon Hai Prec Ind Co Ltd | Chemical vapor deposition device |
KR200453855Y1 (en) * | 2010-04-01 | 2011-05-30 | 이치우 | Cable hanger |
US9885123B2 (en) | 2011-03-16 | 2018-02-06 | Asm America, Inc. | Rapid bake of semiconductor substrate with upper linear heating elements perpendicular to horizontal gas flow |
US20150016083A1 (en) * | 2013-07-05 | 2015-01-15 | Stephen P. Nootens | Thermocompression bonding apparatus and method |
CN112179661B (en) * | 2020-09-18 | 2022-04-22 | 中国航发四川燃气涡轮研究院 | Heating device for wheel disc test |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4571486A (en) * | 1983-03-16 | 1986-02-18 | Ushio Denki Kabushiki Kaisha | Heating method of semiconductor wafer |
EP0505928A2 (en) * | 1991-03-26 | 1992-09-30 | Siemens Aktiengesellschaft | Process for the rapid thermal annealing of a semiconductor wafer using irradiation |
JPH05259082A (en) * | 1992-03-10 | 1993-10-08 | Komatsu Denshi Kinzoku Kk | Epitaxial growth device and method |
US5252132A (en) * | 1990-11-22 | 1993-10-12 | Mitsubishi Denki Kabushiki Kaisha | Apparatus for producing semiconductor film |
US5253324A (en) * | 1992-09-29 | 1993-10-12 | North Carolina State University | Conical rapid thermal processing apparatus |
Family Cites Families (176)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2057776A (en) | 1934-10-29 | 1936-10-20 | Ford Motor Co | Paint baking apparatus |
US2318553A (en) | 1940-08-03 | 1943-05-04 | Estel C Raney | Control apparatus |
US3623712A (en) | 1969-10-15 | 1971-11-30 | Applied Materials Tech | Epitaxial radiation heated reactor and process |
US3761678A (en) | 1971-05-03 | 1973-09-25 | Aerojet General Co | High density spherical modules |
US3796182A (en) | 1971-12-16 | 1974-03-12 | Applied Materials Tech | Susceptor structure for chemical vapor deposition reactor |
US3862397A (en) | 1972-03-24 | 1975-01-21 | Applied Materials Tech | Cool wall radiantly heated reactor |
US3830194A (en) | 1972-09-28 | 1974-08-20 | Applied Materials Tech | Susceptor support structure and docking assembly |
US3936686A (en) | 1973-05-07 | 1976-02-03 | Moore Donald W | Reflector lamp cooling and containing assemblies |
US3836751A (en) | 1973-07-26 | 1974-09-17 | Applied Materials Inc | Temperature controlled profiling heater |
US4047496A (en) | 1974-05-31 | 1977-09-13 | Applied Materials, Inc. | Epitaxial radiation heated reactor |
US4081313A (en) | 1975-01-24 | 1978-03-28 | Applied Materials, Inc. | Process for preparing semiconductor wafers with substantially no crystallographic slip |
US4001047A (en) | 1975-05-19 | 1977-01-04 | General Electric Company | Temperature gradient zone melting utilizing infrared radiation |
US4041278A (en) | 1975-05-19 | 1977-08-09 | General Electric Company | Heating apparatus for temperature gradient zone melting |
US4048955A (en) | 1975-09-02 | 1977-09-20 | Texas Instruments Incorporated | Continuous chemical vapor deposition reactor |
US4115163A (en) | 1976-01-08 | 1978-09-19 | Yulia Ivanovna Gorina | Method of growing epitaxial semiconductor films utilizing radiant heating |
US4101759A (en) | 1976-10-26 | 1978-07-18 | General Electric Company | Semiconductor body heater |
US4097226A (en) | 1976-10-26 | 1978-06-27 | General Electric Company | Furnace for practising temperature gradient zone melting |
JPS53135037A (en) | 1977-04-28 | 1978-11-25 | Nichiden Kikai Kk | Heating apparatus |
US4232360A (en) | 1978-01-11 | 1980-11-04 | General Electric Company | Heat recovery high intensity discharge lamp constructions |
US4221956A (en) | 1978-06-21 | 1980-09-09 | General Electric Company | Apparatus for practising temperature gradient zone melting |
US4224504A (en) | 1978-06-21 | 1980-09-23 | General Electric Company | Apparatus for practicing temperature gradient zone melting |
US4270260A (en) | 1978-10-10 | 1981-06-02 | Krueger Ellison F | Method for the salvage and restoration of integrated circuits from a substrate |
US4378956A (en) | 1980-06-05 | 1983-04-05 | Lester Robert W | Direct imaging of information using light pipe displays |
JPS5747876A (en) | 1980-09-03 | 1982-03-18 | Toshiba Corp | Plasma etching apparatus and method |
JPS5750427A (en) | 1980-09-12 | 1982-03-24 | Ushio Inc | Annealing device and annealing method |
GB2089840B (en) | 1980-12-20 | 1983-12-14 | Cambridge Instr Ltd | Chemical vapour deposition apparatus incorporating radiant heat source for substrate |
US4389970A (en) | 1981-03-16 | 1983-06-28 | Energy Conversion Devices, Inc. | Apparatus for regulating substrate temperature in a continuous plasma deposition process |
US4517448A (en) | 1981-03-23 | 1985-05-14 | Radiant Technology Corporation | Infrared furnace with atmosphere control capability |
US4411619A (en) | 1981-04-02 | 1983-10-25 | Motorola, Inc. | Flange and coupling cooling means and method |
JPS58158914A (en) | 1982-03-16 | 1983-09-21 | Semiconductor Res Found | Semiconductor manufacturing device |
US4448000A (en) | 1982-04-27 | 1984-05-15 | The United States Of America As Represented By The Secretary Of The Navy | High temperature ultra-high vacuum infrared window seal |
US4436985A (en) | 1982-05-03 | 1984-03-13 | Gca Corporation | Apparatus for heat treating semiconductor wafers |
JPS59928A (en) | 1982-06-25 | 1984-01-06 | Ushio Inc | Photo heating device |
US4470369A (en) | 1982-07-12 | 1984-09-11 | Energy Conversion Devices, Inc. | Apparatus for uniformly heating a substrate |
US4545327A (en) | 1982-08-27 | 1985-10-08 | Anicon, Inc. | Chemical vapor deposition apparatus |
JPS5938584A (en) | 1982-08-30 | 1984-03-02 | ウシオ電機株式会社 | Method of operating irradiating heating furnace |
FR2532783A1 (en) | 1982-09-07 | 1984-03-09 | Vu Duy Phach | THERMAL PROCESSING MACHINE FOR SEMICONDUCTORS |
US4582720A (en) | 1982-09-20 | 1986-04-15 | Semiconductor Energy Laboratory Co., Ltd. | Method and apparatus for forming non-single-crystal layer |
JPS5977289A (en) | 1982-10-26 | 1984-05-02 | ウシオ電機株式会社 | Beam irradiating furnace |
US4543472A (en) | 1982-11-03 | 1985-09-24 | Ushio Denki Kabushiki Kaisha | Plane light source unit and radiant heating furnace including same |
US4477718A (en) | 1983-01-10 | 1984-10-16 | Radiant Technology Corporation | Infrared furnace with controlled environment |
US4511788A (en) | 1983-02-09 | 1985-04-16 | Ushio Denki Kabushiki Kaisha | Light-radiant heating furnace |
GB2136937A (en) | 1983-03-18 | 1984-09-26 | Philips Electronic Associated | A furnace for rapidly heating semiconductor bodies |
US4489234A (en) | 1983-03-25 | 1984-12-18 | General Electric Company | Radiant-energy heating and/or cooking apparatus with honeycomb coverplate |
JPS59193024A (en) | 1983-03-29 | 1984-11-01 | Ushio Inc | Flash irradiation device |
GB8318457D0 (en) | 1983-07-07 | 1983-08-10 | Thorn Emi Domestic Appliances | Heating apparatus |
US4496828A (en) | 1983-07-08 | 1985-01-29 | Ultra Carbon Corporation | Susceptor assembly |
US4680447A (en) | 1983-08-11 | 1987-07-14 | Genus, Inc. | Cooled optical window for semiconductor wafer heating |
US4550684A (en) | 1983-08-11 | 1985-11-05 | Genus, Inc. | Cooled optical window for semiconductor wafer heating |
US4504730A (en) | 1983-10-04 | 1985-03-12 | Ushio Denki Kabushiki Kaisha | Method for heating semiconductor wafer by means of application of radiated light |
US4510555A (en) | 1984-02-27 | 1985-04-09 | Kei Mori | Ornamental lighting device |
US4649261A (en) | 1984-02-28 | 1987-03-10 | Tamarack Scientific Co., Inc. | Apparatus for heating semiconductor wafers in order to achieve annealing, silicide formation, reflow of glass passivation layers, etc. |
US5259881A (en) | 1991-05-17 | 1993-11-09 | Materials Research Corporation | Wafer processing cluster tool batch preheating and degassing apparatus |
US4698486A (en) | 1984-02-28 | 1987-10-06 | Tamarack Scientific Co., Inc. | Method of heating semiconductor wafers in order to achieve annealing, silicide formation, reflow of glass passivation layers, etc. |
US4544418A (en) | 1984-04-16 | 1985-10-01 | Gibbons James F | Process for high temperature surface reactions in semiconductor material |
JPH0766910B2 (en) | 1984-07-26 | 1995-07-19 | 新技術事業団 | Semiconductor single crystal growth equipment |
US4615294A (en) | 1984-07-31 | 1986-10-07 | Hughes Aircraft Company | Barrel reactor and method for photochemical vapor deposition |
US4811684A (en) | 1984-11-26 | 1989-03-14 | Semiconductor Energy Laboratory Co., Ltd. | Photo CVD apparatus, with deposition prevention in light source chamber |
JPS61196515A (en) | 1985-02-26 | 1986-08-30 | Mitsubishi Electric Corp | Band-fusion type semiconductor manufacturing equipment |
US4653428A (en) | 1985-05-10 | 1987-03-31 | General Electric Company | Selective chemical vapor deposition apparatus |
US4680451A (en) | 1985-07-29 | 1987-07-14 | A. G. Associates | Apparatus using high intensity CW lamps for improved heat treating of semiconductor wafers |
US4632056A (en) | 1985-08-05 | 1986-12-30 | Stitz Robert W | CVD temperature control |
US4632057A (en) | 1985-08-05 | 1986-12-30 | Spectrum Cvd, Inc. | CVD plasma reactor |
US4640224A (en) | 1985-08-05 | 1987-02-03 | Spectrum Cvd, Inc. | CVD heat source |
US4607591A (en) | 1985-08-06 | 1986-08-26 | Spectrum Cvd, Inc. | CVD heater control circuit |
US4789771A (en) | 1985-10-07 | 1988-12-06 | Epsilon Limited Partnership | Method and apparatus for substrate heating in an axially symmetric epitaxial deposition apparatus |
US4654509A (en) | 1985-10-07 | 1987-03-31 | Epsilon Limited Partnership | Method and apparatus for substrate heating in an axially symmetric epitaxial deposition apparatus |
KR910002596B1 (en) | 1985-11-21 | 1991-04-27 | 다이닛뽕 스크린 세이조오 가부시기가이샤 | Method and apparatus for controlling the temperature of a radiantly heated object |
US4796562A (en) | 1985-12-03 | 1989-01-10 | Varian Associates, Inc. | Rapid thermal cvd apparatus |
US5366554A (en) | 1986-01-14 | 1994-11-22 | Canon Kabushiki Kaisha | Device for forming a deposited film |
FR2594529B1 (en) | 1986-02-19 | 1990-01-26 | Bertin & Cie | APPARATUS FOR HEAT TREATMENT OF THIN PARTS, SUCH AS SILICON WAFERS |
JPH0830273B2 (en) | 1986-07-10 | 1996-03-27 | 株式会社東芝 | Thin film forming method and apparatus |
US5244501A (en) | 1986-07-26 | 1993-09-14 | Nihon Shinku Gijutsu Kabushiki Kaisha | Apparatus for chemical vapor deposition |
EP0255454A3 (en) | 1986-07-26 | 1991-11-21 | Nihon Shinku Gijutsu Kabushiki Kaisha | Apparatus for chemical vapor deposition |
US4859832A (en) | 1986-09-08 | 1989-08-22 | Nikon Corporation | Light radiation apparatus |
JPH0772351B2 (en) | 1986-12-01 | 1995-08-02 | 株式会社日立製作所 | Metal thin film selective growth method |
US5000113A (en) | 1986-12-19 | 1991-03-19 | Applied Materials, Inc. | Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process |
US4919077A (en) | 1986-12-27 | 1990-04-24 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor producing apparatus |
US4820906A (en) | 1987-03-13 | 1989-04-11 | Peak Systems, Inc. | Long arc lamp for semiconductor heating |
US4755654A (en) | 1987-03-26 | 1988-07-05 | Crowley John L | Semiconductor wafer heating chamber |
US4913929A (en) | 1987-04-21 | 1990-04-03 | The Board Of Trustees Of The Leland Stanford Junior University | Thermal/microwave remote plasma multiprocessing reactor and method of use |
US4975561A (en) | 1987-06-18 | 1990-12-04 | Epsilon Technology Inc. | Heating system for substrates |
US4836138A (en) | 1987-06-18 | 1989-06-06 | Epsilon Technology, Inc. | Heating system for reaction chamber of chemical vapor deposition equipment |
US4832779A (en) | 1987-07-16 | 1989-05-23 | Texas Instruments Incorporated | Processing apparatus |
US4830700A (en) | 1987-07-16 | 1989-05-16 | Texas Instruments Incorporated | Processing apparatus and method |
US4820377A (en) | 1987-07-16 | 1989-04-11 | Texas Instruments Incorporated | Method for cleanup processing chamber and vacuum process module |
US4832777A (en) | 1987-07-16 | 1989-05-23 | Texas Instruments Incorporated | Processing apparatus and method |
US4832778A (en) | 1987-07-16 | 1989-05-23 | Texas Instruments Inc. | Processing apparatus for wafers |
US4911103A (en) | 1987-07-17 | 1990-03-27 | Texas Instruments Incorporated | Processing apparatus and method |
US4854263B1 (en) | 1987-08-14 | 1997-06-17 | Applied Materials Inc | Inlet manifold and methods for increasing gas dissociation and for PECVD of dielectric films |
DE3871044D1 (en) | 1987-09-16 | 1992-06-17 | Siemens Ag | ARRANGEMENT FOR CARRYING OUT A CURING PROCESS ON A SEMICONDUCTOR DISC AND METHOD FOR CURING A SEMICONDUCTOR DISC. |
JPH0623935B2 (en) | 1988-02-09 | 1994-03-30 | 大日本スクリーン製造株式会社 | Heat treatment control method with improved reproducibility |
DE3807302A1 (en) | 1988-03-05 | 1989-09-14 | Dornier Gmbh | MIRROR STOVE |
US4886954A (en) | 1988-04-15 | 1989-12-12 | Thermco Systems, Inc. | Hot wall diffusion furnace and method for operating the furnace |
US4981815A (en) | 1988-05-09 | 1991-01-01 | Siemens Aktiengesellschaft | Method for rapidly thermally processing a semiconductor wafer by irradiation using semicircular or parabolic reflectors |
US4914276A (en) | 1988-05-12 | 1990-04-03 | Princeton Scientific Enterprises, Inc. | Efficient high temperature radiant furnace |
KR0155545B1 (en) | 1988-06-27 | 1998-12-01 | 고다까 토시오 | Apparatus for heat-treating a substrate |
US4985281A (en) | 1988-08-22 | 1991-01-15 | Santa Barbara Research Center | Elemental mercury source for metal-organic chemical vapor deposition |
US4901670A (en) | 1988-08-22 | 1990-02-20 | Santa Barbara Research Center | Elemental mercury source for metal-organic chemical vapor deposition |
US4956538A (en) | 1988-09-09 | 1990-09-11 | Texas Instruments, Incorporated | Method and apparatus for real-time wafer temperature measurement using infrared pyrometry in advanced lamp-heated rapid thermal processors |
US4908495A (en) | 1988-12-20 | 1990-03-13 | Texas Instruments Incorporated | Heating lamp assembly for ccvd reactors |
JP2892070B2 (en) | 1989-01-26 | 1999-05-17 | キヤノン株式会社 | Deposition film forming equipment |
US5160545A (en) | 1989-02-03 | 1992-11-03 | Applied Materials, Inc. | Method and apparatus for epitaxial deposition |
JP2731855B2 (en) | 1989-02-14 | 1998-03-25 | アネルバ株式会社 | Low pressure vapor phase growth equipment |
US5053247A (en) | 1989-02-28 | 1991-10-01 | Moore Epitaxial, Inc. | Method for increasing the batch size of a barrel epitaxial reactor and reactor produced thereby |
US5207835A (en) | 1989-02-28 | 1993-05-04 | Moore Epitaxial, Inc. | High capacity epitaxial reactor |
US4920918A (en) | 1989-04-18 | 1990-05-01 | Applied Materials, Inc. | Pressure-resistant thermal reactor system for semiconductor processing |
US5194401A (en) | 1989-04-18 | 1993-03-16 | Applied Materials, Inc. | Thermally processing semiconductor wafers at non-ambient pressures |
US5011794A (en) | 1989-05-01 | 1991-04-30 | At&T Bell Laboratories | Procedure for rapid thermal annealing of implanted semiconductors |
US5156820A (en) | 1989-05-15 | 1992-10-20 | Rapro Technology, Inc. | Reaction chamber with controlled radiant energy heating and distributed reactant flow |
US5155337A (en) | 1989-12-21 | 1992-10-13 | North Carolina State University | Method and apparatus for controlling rapid thermal processing systems |
US5155336A (en) | 1990-01-19 | 1992-10-13 | Applied Materials, Inc. | Rapid thermal heating apparatus and method |
US5252366A (en) | 1990-01-24 | 1993-10-12 | The United States Of America As Represented By The Secretary Of The Air Force | Chemical vapor deposition method using an actively cooled effuser to coat a substrate having a heated surface layer |
US5129360A (en) | 1990-01-24 | 1992-07-14 | The United States Of America As Represented By The Secretary Of The Air Force | Actively cooled effusion cell for chemical vapor deposition |
US5108792A (en) | 1990-03-09 | 1992-04-28 | Applied Materials, Inc. | Double-dome reactor for semiconductor processing |
US5073698A (en) | 1990-03-23 | 1991-12-17 | Peak Systems, Inc. | Method for selectively heating a film on a substrate |
US5047611A (en) | 1990-03-23 | 1991-09-10 | Peak Systems, Inc. | Method for selectively curing a film on a substrate |
KR940011708B1 (en) | 1990-04-09 | 1994-12-23 | 니찌덴 아네루바 가부시끼가이샤 | Temperature control device for semiconductor wafer |
US5154512A (en) | 1990-04-10 | 1992-10-13 | Luxtron Corporation | Non-contact techniques for measuring temperature or radiation-heated objects |
US5271084A (en) | 1990-05-23 | 1993-12-14 | Interuniversitair Micro Elektronica Centrum Vzw | Method and device for measuring temperature radiation using a pyrometer wherein compensation lamps are used |
US5188672A (en) | 1990-06-28 | 1993-02-23 | Applied Materials, Inc. | Reduction of particulate contaminants in chemical-vapor-deposition apparatus |
US5044943A (en) | 1990-08-16 | 1991-09-03 | Applied Materials, Inc. | Spoked susceptor support for enhanced thermal uniformity of susceptor in semiconductor wafer processing apparatus |
US5179677A (en) | 1990-08-16 | 1993-01-12 | Applied Materials, Inc. | Apparatus and method for substrate heating utilizing various infrared means to achieve uniform intensity |
US5269847A (en) | 1990-08-23 | 1993-12-14 | Applied Materials, Inc. | Variable rate distribution gas flow reaction chamber |
US5085887A (en) | 1990-09-07 | 1992-02-04 | Applied Materials, Inc. | Wafer reactor vessel window with pressure-thermal compensation |
JP2780866B2 (en) | 1990-10-11 | 1998-07-30 | 大日本スクリーン製造 株式会社 | Light irradiation heating substrate temperature measurement device |
US5148714A (en) | 1990-10-24 | 1992-09-22 | Ag Processing Technology, Inc. | Rotary/linear actuator for closed chamber, and reaction chamber utilizing same |
JPH04332121A (en) * | 1991-05-07 | 1992-11-19 | Mitsubishi Electric Corp | Semiconductor manufacturing device |
JPH04243123A (en) | 1991-01-17 | 1992-08-31 | Mitsubishi Electric Corp | Semiconductor manufacturing apparatus |
JPH0812847B2 (en) | 1991-04-22 | 1996-02-07 | 株式会社半導体プロセス研究所 | Semiconductor manufacturing apparatus and semiconductor device manufacturing method |
US5446825A (en) | 1991-04-24 | 1995-08-29 | Texas Instruments Incorporated | High performance multi-zone illuminator module for semiconductor wafer processing |
US5436172A (en) | 1991-05-20 | 1995-07-25 | Texas Instruments Incorporated | Real-time multi-zone semiconductor wafer temperature and process uniformity control system |
JPH04370924A (en) | 1991-06-20 | 1992-12-24 | Fujitsu Ltd | Cvd device |
JP3096743B2 (en) | 1991-06-28 | 2000-10-10 | 光洋精工株式会社 | Lamp annealing furnace temperature controller |
US5446824A (en) | 1991-10-11 | 1995-08-29 | Texas Instruments | Lamp-heated chuck for uniform wafer processing |
US5332442A (en) | 1991-11-15 | 1994-07-26 | Tokyo Electron Kabushiki Kaisha | Surface processing apparatus |
US5215588A (en) | 1992-01-17 | 1993-06-01 | Amtech Systems, Inc. | Photo-CVD system |
JPH05243166A (en) | 1992-02-26 | 1993-09-21 | Nec Corp | Semiconductor substrate vapor growth device |
US5268989A (en) | 1992-04-16 | 1993-12-07 | Texas Instruments Incorporated | Multi zone illuminator with embeded process control sensors and light interference elimination circuit |
JP2888026B2 (en) | 1992-04-30 | 1999-05-10 | 松下電器産業株式会社 | Plasma CVD equipment |
US5461214A (en) | 1992-06-15 | 1995-10-24 | Thermtec, Inc. | High performance horizontal diffusion furnace system |
US5534072A (en) | 1992-06-24 | 1996-07-09 | Anelva Corporation | Integrated module multi-chamber CVD processing system and its method for processing subtrates |
JP3154197B2 (en) | 1992-06-29 | 2001-04-09 | ソニー株式会社 | Film forming equipment |
KR100241290B1 (en) | 1992-07-09 | 2000-03-02 | 야마시타 히데나리 | Semiconductor processing apparatus |
JP3604706B2 (en) | 1992-07-23 | 2004-12-22 | キヤノン株式会社 | Film formation method |
US5449883A (en) | 1992-08-07 | 1995-09-12 | Mitsubishi Materials Corporation | Continuous heat treatment system of semiconductor wafers for eliminating thermal donor |
US5288364A (en) | 1992-08-20 | 1994-02-22 | Motorola, Inc. | Silicon epitaxial reactor and control method |
US5271963A (en) | 1992-11-16 | 1993-12-21 | Materials Research Corporation | Elimination of low temperature ammonia salt in TiCl4 NH3 CVD reaction |
JP3115134B2 (en) | 1992-11-27 | 2000-12-04 | 松下電器産業株式会社 | Thin film processing apparatus and thin film processing method |
US5418885A (en) | 1992-12-29 | 1995-05-23 | North Carolina State University | Three-zone rapid thermal processing system utilizing wafer edge heating means |
EP0606751B1 (en) | 1993-01-13 | 2002-03-06 | Applied Materials, Inc. | Method for depositing polysilicon films having improved uniformity and apparatus therefor |
US5444217A (en) | 1993-01-21 | 1995-08-22 | Moore Epitaxial Inc. | Rapid thermal processing apparatus for processing semiconductor wafers |
US5308161A (en) | 1993-02-11 | 1994-05-03 | Quantum Logic Corporation | Pyrometer apparatus for use in rapid thermal processing of semiconductor wafers |
JP2824003B2 (en) | 1993-02-16 | 1998-11-11 | 大日本スクリーン製造株式会社 | Substrate temperature measurement device |
US5305417A (en) | 1993-03-26 | 1994-04-19 | Texas Instruments Incorporated | Apparatus and method for determining wafer temperature using pyrometry |
US5345534A (en) | 1993-03-29 | 1994-09-06 | Texas Instruments Incorporated | Semiconductor wafer heater with infrared lamp module with light blocking means |
US5624590A (en) | 1993-04-02 | 1997-04-29 | Lucent Technologies, Inc. | Semiconductor processing technique, including pyrometric measurement of radiantly heated bodies and an apparatus for practicing this technique |
JP3380988B2 (en) | 1993-04-21 | 2003-02-24 | 東京エレクトロン株式会社 | Heat treatment equipment |
US5525160A (en) | 1993-05-10 | 1996-06-11 | Tokyo Electron Kabushiki Kaisha | Film deposition processing device having transparent support and transfer pins |
US5565382A (en) | 1993-10-12 | 1996-10-15 | Applied Materials, Inc. | Process for forming tungsten silicide on semiconductor wafer using dichlorosilane gas |
US5504831A (en) | 1993-11-10 | 1996-04-02 | Micron Semiconductor, Inc. | System for compensating against wafer edge heat loss in rapid thermal processing |
US5444815A (en) | 1993-12-16 | 1995-08-22 | Texas Instruments Incorporated | Multi-zone lamp interference correction system |
JP3571785B2 (en) | 1993-12-28 | 2004-09-29 | キヤノン株式会社 | Method and apparatus for forming deposited film |
US5452396A (en) | 1994-02-07 | 1995-09-19 | Midwest Research Institute | Optical processing furnace with quartz muffle and diffuser plate |
US5551982A (en) | 1994-03-31 | 1996-09-03 | Applied Materials, Inc. | Semiconductor wafer process chamber with susceptor back coating |
US5451260A (en) | 1994-04-15 | 1995-09-19 | Cornell Research Foundation, Inc. | Method and apparatus for CVD using liquid delivery system with an ultrasonic nozzle |
US5493987A (en) | 1994-05-16 | 1996-02-27 | Ag Associates, Inc. | Chemical vapor deposition reactor and method |
US5561735A (en) | 1994-08-30 | 1996-10-01 | Vortek Industries Ltd. | Rapid thermal processing apparatus and method |
US5611898A (en) | 1994-12-08 | 1997-03-18 | International Business Machines Corporation | Reaction chamber having in situ oxygen generation |
US5518549A (en) | 1995-04-18 | 1996-05-21 | Memc Electronic Materials, Inc. | Susceptor and baffle therefor |
JP3360098B2 (en) | 1995-04-20 | 2002-12-24 | 東京エレクトロン株式会社 | Shower head structure of processing equipment |
JP3553204B2 (en) | 1995-04-28 | 2004-08-11 | アネルバ株式会社 | CVD equipment |
JP3288200B2 (en) | 1995-06-09 | 2002-06-04 | 東京エレクトロン株式会社 | Vacuum processing equipment |
US5551985A (en) | 1995-08-18 | 1996-09-03 | Torrex Equipment Corporation | Method and apparatus for cold wall chemical vapor deposition |
US5937142A (en) * | 1996-07-11 | 1999-08-10 | Cvc Products, Inc. | Multi-zone illuminator for rapid thermal processing |
US5970214A (en) * | 1998-05-14 | 1999-10-19 | Ag Associates | Heating device for semiconductor wafers |
-
1998
- 1998-09-09 US US09/150,280 patent/US6210484B1/en not_active Expired - Fee Related
-
1999
- 1999-09-08 EP EP99968736A patent/EP1116262A2/en not_active Withdrawn
- 1999-09-08 WO PCT/IB1999/001710 patent/WO2000014775A2/en not_active Application Discontinuation
- 1999-09-08 JP JP2000569426A patent/JP2002524871A/en not_active Withdrawn
- 1999-09-08 KR KR1020017003086A patent/KR100629016B1/en not_active IP Right Cessation
- 1999-09-09 TW TW088115540A patent/TW419752B/en not_active IP Right Cessation
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4571486A (en) * | 1983-03-16 | 1986-02-18 | Ushio Denki Kabushiki Kaisha | Heating method of semiconductor wafer |
US5252132A (en) * | 1990-11-22 | 1993-10-12 | Mitsubishi Denki Kabushiki Kaisha | Apparatus for producing semiconductor film |
EP0505928A2 (en) * | 1991-03-26 | 1992-09-30 | Siemens Aktiengesellschaft | Process for the rapid thermal annealing of a semiconductor wafer using irradiation |
JPH05259082A (en) * | 1992-03-10 | 1993-10-08 | Komatsu Denshi Kinzoku Kk | Epitaxial growth device and method |
US5253324A (en) * | 1992-09-29 | 1993-10-12 | North Carolina State University | Conical rapid thermal processing apparatus |
Non-Patent Citations (1)
Title |
---|
PATENT ABSTRACTS OF JAPAN vol. 018, no. 020 (E - 1489) 13 January 1994 (1994-01-13) * |
Also Published As
Publication number | Publication date |
---|---|
WO2000014775A2 (en) | 2000-03-16 |
EP1116262A2 (en) | 2001-07-18 |
KR100629016B1 (en) | 2006-09-26 |
KR20010073143A (en) | 2001-07-31 |
JP2002524871A (en) | 2002-08-06 |
TW419752B (en) | 2001-01-21 |
US6210484B1 (en) | 2001-04-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2000014775A3 (en) | Multi-lamp cone reflector for semiconductor wafer heating | |
US5016332A (en) | Plasma reactor and process with wafer temperature control | |
US6717158B1 (en) | Heating device for heating semiconductor wafers in thermal processing chambers | |
US20030029859A1 (en) | Lamphead for a rapid thermal processing chamber | |
KR100976649B1 (en) | Controlled annealing method | |
US20050213949A1 (en) | Heating configuration for use in thermal processing chambers | |
EP1209251A3 (en) | Temperature control system for wafer | |
WO2002009171A1 (en) | Ceramic substrate for semiconductor manufacture/inspection apparatus, ceramic heater, electrostatic clampless holder, and substrate for wafer prober | |
EP1593146B1 (en) | Radiant heating source | |
JPH07100863B2 (en) | Heating device for reaction chamber of chemical vapor deposition equipment | |
CA2210226A1 (en) | High efficiency, highly controllable lighting apparatus and method | |
US6122440A (en) | Optical heating device for rapid thermal processing (RTP) system | |
JP2008071787A (en) | Heating device of light irradiation type and heating method of light irradiation type | |
US6798142B2 (en) | Flash emitting device and radiant heating apparatus | |
US4398094A (en) | Equipment and method for annealing semiconductors | |
EP1091622A3 (en) | Control apparatus for a light radiation-type rapid heating and processing device | |
JP2009123807A (en) | Heat treatment apparatus | |
JP5456257B2 (en) | Heat treatment equipment | |
JP2007012846A (en) | Photoirradiation type heating device and method therefor | |
KR100807120B1 (en) | Rapid thermal processing apparatus | |
US11143416B2 (en) | Radiation heater arrangement | |
US20060115968A1 (en) | Method and apparatus for thermally treating disk-shaped substrates | |
US6074482A (en) | Device for coating disc-shaped information storage media | |
JP5349802B2 (en) | Heat treatment equipment | |
JP2515883B2 (en) | Lamp annealing equipment for semiconductor device manufacturing |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A2 Designated state(s): JP KR SG |
|
AL | Designated countries for regional patents |
Kind code of ref document: A2 Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
AK | Designated states |
Kind code of ref document: A3 Designated state(s): JP KR SG |
|
AL | Designated countries for regional patents |
Kind code of ref document: A3 Designated state(s): AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE |
|
DFPE | Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101) | ||
ENP | Entry into the national phase |
Ref country code: JP Ref document number: 2000 569426 Kind code of ref document: A Format of ref document f/p: F |
|
WWE | Wipo information: entry into national phase |
Ref document number: 1020017003086 Country of ref document: KR |
|
WWE | Wipo information: entry into national phase |
Ref document number: 1999968736 Country of ref document: EP |
|
WWP | Wipo information: published in national office |
Ref document number: 1999968736 Country of ref document: EP |
|
WWP | Wipo information: published in national office |
Ref document number: 1020017003086 Country of ref document: KR |
|
WWG | Wipo information: grant in national office |
Ref document number: 1020017003086 Country of ref document: KR |
|
WWW | Wipo information: withdrawn in national office |
Ref document number: 1999968736 Country of ref document: EP |