WO2000012986A1 - Bolometer including a reflective layer - Google Patents

Bolometer including a reflective layer Download PDF

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Publication number
WO2000012986A1
WO2000012986A1 PCT/KR1998/000267 KR9800267W WO0012986A1 WO 2000012986 A1 WO2000012986 A1 WO 2000012986A1 KR 9800267 W KR9800267 W KR 9800267W WO 0012986 A1 WO0012986 A1 WO 0012986A1
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WO
WIPO (PCT)
Prior art keywords
level
bolometer
absorber
reflective layer
absorption
Prior art date
Application number
PCT/KR1998/000267
Other languages
French (fr)
Inventor
Dong Kyun Kim
Original Assignee
Daewoo Electronics Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Daewoo Electronics Co., Ltd. filed Critical Daewoo Electronics Co., Ltd.
Priority to JP2000567923A priority Critical patent/JP2002523770A/en
Priority to DE69836285T priority patent/DE69836285T2/en
Priority to EP98941893A priority patent/EP1131613B1/en
Priority to PCT/KR1998/000267 priority patent/WO2000012986A1/en
Priority to US09/146,254 priority patent/US6198099B1/en
Publication of WO2000012986A1 publication Critical patent/WO2000012986A1/en

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices

Definitions

  • the present invention relates to an infra-red bolometer; and, more particularly, to the infra-red bolometer having an absorber with a reflective layer formed at the bottom surface thereof .
  • Bolometers are energy detectors based upon a change in the resistance of materials (called bolometer elements) that are exposed to a radiation flux.
  • the bolometer elements have been made from both metals and semiconductors.
  • the resistance change is essentially due to a variation in the carrier mobility, which typically decreases with temperature.
  • greater sensitivity can be obtained in high-resistivity semiconductor bolometer elements wherein the free-carrier density is an exponential function of temperature; however, thin film fabrication of semiconductor elements for the construction of bolometers is a difficult task.
  • Fig. 1 there is a cross sectional view setting forth two-level microbridge bolometer 100, disclosed in U.S patent No.
  • the bolometer 100 including a lower level 111, an elevated microbridge detector level 112 and sloping supports 130. There exists a thermal isolation cavity or air gap 126.
  • the lower level 111 includes a flat surfaced semiconductor substrate 113, an integrated circuit 115, a protective layer 116 and a thin film reflective layer 118.
  • the substrate 113 is formed as a single crystal silicon substrate.
  • the surface 114 of the substrate 113 has fabricated thereon conventional components of the integrated circuit 115.
  • the integrated circuit 115 is coated with the protective layer of silicon nitride 116.
  • the reflective layer 118 made of a metal, e.g., Pt or Au, is formed on top of the protective layer 116.
  • the elevated detector level 112 includes a silicon nitride layer 120, a thin film resistive layer 121 of vanadium or titanium oxide (V_0 3 , TiO ⁇ , VO ⁇ ) , a silicon nitride layer 122 over the layers 120 and 121 and IR absorber coating 123 over the silicon nitride layer 122.
  • the material chosen for the thin film resistive layer 121 are characterized by a low IR reflectance together with a relatively high temperature coefficient of resistance (TCR) .
  • the IR absorber coating may be made of a Permalloy, e.g., a nickel iron alloy.
  • Downwardly extending silicon nitride layers 120' and 122' formed at the same time as the layers 120 and 122 during make up the sloping supports 130 for the elevated detector level 112.
  • the ends of the resistive layer 121 also continued down the sloping supports 130 embedded in 120' and 22' to make electrical contact with the lower level 111.
  • the cavity 126 was originally filled with a previously deposited layer of easily dissolvable glass or other dissolvable material, e.g., quartz, polyamide and resist, until the layers 120, 120', 122 and 122' were deposited. Subsequently in the process the glass was dissolved out to provide the cavity or gap 126.
  • the optical properties of the bolometer 100 are achieved by the determination of the total structure. To optimize the absorption in the structure, the thickness of all the absorbing layers and the air gap distance must be controlled. In this two-level structure, the elevated detector level 112 is separated from the reflective layer 118 by the air gap. The interference properties of the reflected radiation are such that significant absorption is achieved by the range of wavelengths and air gap spacing between the reflective layer 118 and the elevated detector level 112.
  • the detectors presently being described are intended for use in the 8 -14 micron IR wavelength. As an effect of experimentation in the wavelength 8-14 microns, with air gaps of 1-2 microns and especially at 1.5 microns the absorption is relatively high across the desired wavelength spread.
  • Fig. 2 The effect of gap thickness of the absorption vs. wavelength in the regions of interest are further displayed graphically in Fig. 2. It can be seen in the curve of 1.5 microns gap thickness that at 8 microns the absorption of the structure is climbing rapidly, and that is remains relatively high out to about 14 microns. The curve for a gap of 2 microns shows that at IR wavelengths of 14 microns the absorption is better.
  • the air gap size has to be determined though experimentations with considerations given to the incident IR wavelength relative to the object for using the bolometer 100 and this is an extremely difficult and heavy task. Furthermore, in the manufacture of the bolometer 100, the fabricating condition for easily dissolvable glass material, with which the air gap is filled, changes according to the determined gap size, which will, in turn, make a mass production of the bolometer 100 difficult.
  • an infra-red bolometer including an absorber with a reflecting layer formed at the bottom surface thereof.
  • an infra-red bolometer which comprises: an active matrix level including a substrate and at least a pair of connecting terminals; a support level provided with at least a pair of bridges, each of the bridges including an conduction line formed on top thereof, wherein the conduction line is electrically connected to the connecting terminal; an absorption level including an absorber with a reflective layer attached at bottom surface thereof, a serpentine bolometer element surrounded by the absorber and an IR absorber coating formed on top of the absorber; and at least a pair of posts, each of the posts being placed between the absorption level and the support level and including an electrical conduit surrounded by an insulating material, wherein top end of the electrical conduit is connected to one end of the bolometer element and bottom end of the electrical conduit is connected to the connection line.
  • Fig. 1 is a schematic cross sectional view setting forth a two-level infrared bolometer previous disclosed
  • Fig. 2 shows graphically relationship between absorption and air gap thickness
  • Fig. 3 presents a perspective view depicting a three- level infra-red bolometer in accordance with the present invention
  • Fig. 4 provides a schematic cross sectional view illustrating the three-level bolometer shown in Fig. 3; and Fig. 5 provides a schematic cross sectional view setting forth a two-level infra-red bolometer in accordance with another embodiment of the present invention, respectively.
  • FIGs . 3 , 4 and 5 a perspective view illustrating a three-level infrared bolometer 200, a schematic cross sectional view setting forth the bolometer 200 shown in Fig. 3, and a schematic cross sectional view illustrating a two-level infrared bolometer 300, in accordance with the embodiments of the present invention, respectively.
  • Figs. 3, 4 and 5 are represented by like reference numerals.
  • the three-level infrared bolometer 200 comprises an active matrix level 210, a support level 220, an absorption level 230, and at least a pair of posts 260.
  • the active matrix level 210 has a substrate 212 including an integrated circuit (not shown) , a pair of connecting terminals 214 and a protective layer 216.
  • Each of the connecting terminals 214 made of a metal is located on top of the substrate 212.
  • the protective layer 216 made of, e.g., silicon nitride (SiN ⁇ ) covers the substrate 212.
  • the pair of connecting terminals 214 are electrically connected to the integrated circuit .
  • the support level 220 includes a pair of bridges 240 made of silicon oxide (Si02) or silicon oxy-nitride
  • each of the bridges 240 having a conduction line 255 made of a metal, e.g., Ti , and formed on top thereof.
  • Each of the bridges 240 is provided with an anchor portion 242, a leg portion 244 and an elevated portion 246, the anchor portion 242 including a via hole 252 through which one end of the conduction line 255 is electrically connected to the connecting terminal 214, the leg portion 244 supporting the elevated portion 246.
  • the absorption level 230 is provided with a reflective layer 275, a bolometer element 285, an absorber 295 and an IR absorber coating 297.
  • the IR absorber coating 297 made of, e.g., black gold, is placed on the top surface of the absorber 295.
  • the absorber 295 is made of a material having a low heat conductivity, e.g., silicon oxide (SiO_) or silicon oxy- nitride (SiOxNy) .
  • the bolometer element 285 is made of a material having a high temperature coefficient of resistance (TCR) , e.g., Ti, and is surrounded by the absorber 295, wherein the bolometer element 285 has a serpentine shape to increase its resistance.
  • TCR temperature coefficient of resistance
  • the reflective layer 275 made of, e.g., aluminum (Al) , is attached at the bottom surface of the absorber 295, wherein the reflecting layer 275 causes the transmitted IR through the absorber 295 to be reflected, resulting the absorber 295 re-absorbing the reflected IR.
  • the absorption by the absorber 295 without the reflective layer 275 formed at the bottom surface thereof and the IR absorber coating 297 formed on the top surface thereof is only to about 30%. With the presence of the reflective layer 275 and the IR absorber coating 297, it is possible for the absorber 295 to absorb 90% of incident IR.
  • Each of the posts 260 is placed between the absorption level 230 and the support level 220.
  • Each of the post 260 includes an electrical conduit 262 made of a metal, e.g., titanium (Ti) and surrounded by an insulating material 264 made of, e.g., silicon oxide (SiO,) or silicon oxy-nitride (SiOxNy) .
  • Top end of the electrical conduit 262 is electrically connected to one end of the serpentine bolometer element 285 and bottom end of the electrical conduit 262 is electrically connected to the conduction line 255 on the bridge 240, in such a way that both ends of the serpentine bolometer element 285 in the absorption level 230 is electrically connected to the integrated circuit of the active matrix level 210 through the electrical conduits 262, the conduction lines 255 and the connecting terminals 214.
  • the resistivity of the serpentine bolometer element 285 is changed, wherein the changed resistivity causes a current and a voltage to vary.
  • the varied current or voltage is amplified by the integrated circuit, in such a way that the amplified current or voltage is read out by a detective circuit (not shown) .
  • the reflective layer 275 is attached at the bottom surface of the absorber 295, which will, in turn, eliminate the need for determinating the vertical distance (or air gap size) between the absorption level 230 and the active matrix level 210, with respect to the incident IR wavelength. Furthermore, in the manufacture of the bolometers 200, the deposition thickness of easily dissolvable glass material can be fixed, which will, in turn, allow a mass production of the bolometer 200 feasible.

Abstract

An infra-red bolometer (200) includes an active matrix level (210), a support level (220), a pair of posts and an absorption level (230). The active matrix level (210) includes a substrate (212) having a pair of connecting terminals (214). The support level includes a pair of bridges (240), each of the bridges being provided with a conduction line (255) formed on top thereof, wherein one end of the conduction line is electrically connected to the respective connecting terminal (214). The absorption level (230) includes an absorber with a reflective layer (275) positioned at bottom surface thereof, a serpentine bolometer element (285) surrounded by the absorber (295) and an IR absorber coating (297) formed top of the absorber (295). Since the reflective layer (275) is attached at the bottom surface of the absorber (295), which will, in turn, eliminate the need for controlling the vertical distance between the absorption level (230) and the active matrix level (210).

Description

BOLOMETER INCLUDING A REFLECTIVE LAYER
TECHNICAL FIELD OF THE INVENTION
The present invention relates to an infra-red bolometer; and, more particularly, to the infra-red bolometer having an absorber with a reflective layer formed at the bottom surface thereof .
BACKGROUND ART
Bolometers are energy detectors based upon a change in the resistance of materials (called bolometer elements) that are exposed to a radiation flux. The bolometer elements have been made from both metals and semiconductors. In case of the metals, the resistance change is essentially due to a variation in the carrier mobility, which typically decreases with temperature. In contrast, greater sensitivity can be obtained in high-resistivity semiconductor bolometer elements wherein the free-carrier density is an exponential function of temperature; however, thin film fabrication of semiconductor elements for the construction of bolometers is a difficult task. In Fig. 1, there is a cross sectional view setting forth two-level microbridge bolometer 100, disclosed in U.S patent No. 5,286,976 and entitled "MICROSTRUCTURE DESIGN FOR HIGH IR SENSITIVITY", the bolometer 100 including a lower level 111, an elevated microbridge detector level 112 and sloping supports 130. There exists a thermal isolation cavity or air gap 126.
The lower level 111 includes a flat surfaced semiconductor substrate 113, an integrated circuit 115, a protective layer 116 and a thin film reflective layer 118. The substrate 113 is formed as a single crystal silicon substrate. The surface 114 of the substrate 113 has fabricated thereon conventional components of the integrated circuit 115. The integrated circuit 115 is coated with the protective layer of silicon nitride 116. The reflective layer 118 made of a metal, e.g., Pt or Au, is formed on top of the protective layer 116.
The elevated detector level 112 includes a silicon nitride layer 120, a thin film resistive layer 121 of vanadium or titanium oxide (V_03, TiOχ, VOχ) , a silicon nitride layer 122 over the layers 120 and 121 and IR absorber coating 123 over the silicon nitride layer 122. The material chosen for the thin film resistive layer 121 are characterized by a low IR reflectance together with a relatively high temperature coefficient of resistance (TCR) . The IR absorber coating may be made of a Permalloy, e.g., a nickel iron alloy. Downwardly extending silicon nitride layers 120' and 122' formed at the same time as the layers 120 and 122 during make up the sloping supports 130 for the elevated detector level 112. The ends of the resistive layer 121 also continued down the sloping supports 130 embedded in 120' and 22' to make electrical contact with the lower level 111. During the fabrication process, however, the cavity 126 was originally filled with a previously deposited layer of easily dissolvable glass or other dissolvable material, e.g., quartz, polyamide and resist, until the layers 120, 120', 122 and 122' were deposited. Subsequently in the process the glass was dissolved out to provide the cavity or gap 126.
The optical properties of the bolometer 100 are achieved by the determination of the total structure. To optimize the absorption in the structure, the thickness of all the absorbing layers and the air gap distance must be controlled. In this two-level structure, the elevated detector level 112 is separated from the reflective layer 118 by the air gap. The interference properties of the reflected radiation are such that significant absorption is achieved by the range of wavelengths and air gap spacing between the reflective layer 118 and the elevated detector level 112. The detectors presently being described are intended for use in the 8 -14 micron IR wavelength. As an effect of experimentation in the wavelength 8-14 microns, with air gaps of 1-2 microns and especially at 1.5 microns the absorption is relatively high across the desired wavelength spread.
The effect of gap thickness of the absorption vs. wavelength in the regions of interest are further displayed graphically in Fig. 2. It can be seen in the curve of 1.5 microns gap thickness that at 8 microns the absorption of the structure is climbing rapidly, and that is remains relatively high out to about 14 microns. The curve for a gap of 2 microns shows that at IR wavelengths of 14 microns the absorption is better.
There are certain deficiencies associated with the above bolometer 100. The air gap size has to be determined though experimentations with considerations given to the incident IR wavelength relative to the object for using the bolometer 100 and this is an extremely difficult and heavy task. Furthermore, in the manufacture of the bolometer 100, the fabricating condition for easily dissolvable glass material, with which the air gap is filled, changes according to the determined gap size, which will, in turn, make a mass production of the bolometer 100 difficult. DISCLOSURE OF THE INVENTION
It is, therefore, a primary object of the present invention to provide an infra-red bolometer including an absorber with a reflecting layer formed at the bottom surface thereof.
In accordance with one aspect of the present invention, there is provided an infra-red bolometer, which comprises: an active matrix level including a substrate and at least a pair of connecting terminals; a support level provided with at least a pair of bridges, each of the bridges including an conduction line formed on top thereof, wherein the conduction line is electrically connected to the connecting terminal; an absorption level including an absorber with a reflective layer attached at bottom surface thereof, a serpentine bolometer element surrounded by the absorber and an IR absorber coating formed on top of the absorber; and at least a pair of posts, each of the posts being placed between the absorption level and the support level and including an electrical conduit surrounded by an insulating material, wherein top end of the electrical conduit is connected to one end of the bolometer element and bottom end of the electrical conduit is connected to the connection line.
BRIEF DESCRIPTION OF THE DRAWINGS
The above and other objects and features of the present invention will become apparent from the following description of the preferred embodiments given in conjunction with the accompanying drawings, wherein:
Fig. 1 is a schematic cross sectional view setting forth a two-level infrared bolometer previous disclosed;
Fig. 2 shows graphically relationship between absorption and air gap thickness;
Fig. 3 presents a perspective view depicting a three- level infra-red bolometer in accordance with the present invention;
Fig. 4 provides a schematic cross sectional view illustrating the three-level bolometer shown in Fig. 3; and Fig. 5 provides a schematic cross sectional view setting forth a two-level infra-red bolometer in accordance with another embodiment of the present invention, respectively.
MODES OF CARRYING OUT THE INVENTION
There are provided in Figs . 3 , 4 and 5 a perspective view illustrating a three-level infrared bolometer 200, a schematic cross sectional view setting forth the bolometer 200 shown in Fig. 3, and a schematic cross sectional view illustrating a two-level infrared bolometer 300, in accordance with the embodiments of the present invention, respectively. It should be noted that like parts appearing in Figs. 3, 4 and 5 are represented by like reference numerals.
In Fig. 3 and 4, the three-level infrared bolometer 200 comprises an active matrix level 210, a support level 220, an absorption level 230, and at least a pair of posts 260. The active matrix level 210 has a substrate 212 including an integrated circuit (not shown) , a pair of connecting terminals 214 and a protective layer 216. Each of the connecting terminals 214 made of a metal is located on top of the substrate 212. The protective layer 216 made of, e.g., silicon nitride (SiNχ) covers the substrate 212. The pair of connecting terminals 214 are electrically connected to the integrated circuit .
The support level 220 includes a pair of bridges 240 made of silicon oxide (Si02) or silicon oxy-nitride
(SiOxNy) , each of the bridges 240 having a conduction line 255 made of a metal, e.g., Ti , and formed on top thereof. Each of the bridges 240 is provided with an anchor portion 242, a leg portion 244 and an elevated portion 246, the anchor portion 242 including a via hole 252 through which one end of the conduction line 255 is electrically connected to the connecting terminal 214, the leg portion 244 supporting the elevated portion 246. The absorption level 230 is provided with a reflective layer 275, a bolometer element 285, an absorber 295 and an IR absorber coating 297. The IR absorber coating 297 made of, e.g., black gold, is placed on the top surface of the absorber 295. The absorber 295 is made of a material having a low heat conductivity, e.g., silicon oxide (SiO_) or silicon oxy- nitride (SiOxNy) . The bolometer element 285 is made of a material having a high temperature coefficient of resistance (TCR) , e.g., Ti, and is surrounded by the absorber 295, wherein the bolometer element 285 has a serpentine shape to increase its resistance. The reflective layer 275 made of, e.g., aluminum (Al) , is attached at the bottom surface of the absorber 295, wherein the reflecting layer 275 causes the transmitted IR through the absorber 295 to be reflected, resulting the absorber 295 re-absorbing the reflected IR. The absorption by the absorber 295 without the reflective layer 275 formed at the bottom surface thereof and the IR absorber coating 297 formed on the top surface thereof is only to about 30%. With the presence of the reflective layer 275 and the IR absorber coating 297, it is possible for the absorber 295 to absorb 90% of incident IR.
Each of the posts 260 is placed between the absorption level 230 and the support level 220. Each of the post 260 includes an electrical conduit 262 made of a metal, e.g., titanium (Ti) and surrounded by an insulating material 264 made of, e.g., silicon oxide (SiO,) or silicon oxy-nitride (SiOxNy) . Top end of the electrical conduit 262 is electrically connected to one end of the serpentine bolometer element 285 and bottom end of the electrical conduit 262 is electrically connected to the conduction line 255 on the bridge 240, in such a way that both ends of the serpentine bolometer element 285 in the absorption level 230 is electrically connected to the integrated circuit of the active matrix level 210 through the electrical conduits 262, the conduction lines 255 and the connecting terminals 214. When the infra-red energy is absorbed, the resistivity of the serpentine bolometer element 285 is changed, wherein the changed resistivity causes a current and a voltage to vary. The varied current or voltage is amplified by the integrated circuit, in such a way that the amplified current or voltage is read out by a detective circuit (not shown) .
In comparison with the bolometer 100 previous described, the reflective layer 275 is attached at the bottom surface of the absorber 295, which will, in turn, eliminate the need for determinating the vertical distance (or air gap size) between the absorption level 230 and the active matrix level 210, with respect to the incident IR wavelength. Furthermore, in the manufacture of the bolometers 200, the deposition thickness of easily dissolvable glass material can be fixed, which will, in turn, allow a mass production of the bolometer 200 feasible.
Additionally, as shown in Fig. 5, it is possible to apply the inventive concept to the two-level infrared bolometer 300, by attaching the reflective layer 318 on the bottom surface of the detector level 312.
While the present invention has been described with respect to certain preferred embodiments only, other modifications and variations may be made without departing from the scope of the present invention as set forth in the following claims.

Claims

What is claimed is:
1. A three-level infrared bolometer comprising: an active matrix level including a substrate and at least a pair of connecting terminals; a support level provided with at least a pair of bridges, each of the bridges including an conduction line, one end of the conduction line being electrically connected to the respective connecting terminal; an absorption level including an absorber with a reflective layer formed at a bottom surface thereof and a serpentine bolometer element surrounded by an absorber; and at least a pair of posts being placed between the absorption level and the support level, each of the posts including an electrical conduit surrounded by an insulating material, wherein top end of the electrical conduit is connected to the absorption level and bottom end is electrically connected to the other end of the respective conduction line.
2. The bolometer of claim 1, wherein the reflective layer is attached at bottom of the absorber in the absorption level .
3. The bolometer of claim 1, wherein the reflective layer is made of a metal .
4. The bolometer of claim 3, wherein the reflective layer is made of aluminum (Al) .
5. The bolometer of claim 1, wherein the absorption level further includes an IR absorber coating.
6. The bolometer of claim 5, wherein the IR absorber coating is placed on top of the absorber.
7. The bolometer of claim 6, wherein the IR absorber coating is made of black gold.
8. A two-level infra-red bolometer comprising a lower level and an elevated detector level spaced from the lower level by using dielectric leg portion means, the lower level having a protective layer formed on top of a substrate, the elevated detector level including a reflective layer and a thin film resistive layer surrounded by an absorber layer, the dielectric leg portion means downwardly extending from the elevated detector level to the lower level, the two-level bolometer being characterized in that : the reflective layer of the elevated detector level is formed at the bottom surface of the absorber layer.
9. The bolometer claim 6, wherein the reflective layer is made of aluminum (Al) .
PCT/KR1998/000267 1998-08-31 1998-08-31 Bolometer including a reflective layer WO2000012986A1 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2000567923A JP2002523770A (en) 1998-08-31 1998-08-31 Bolometer with reflective layer
DE69836285T DE69836285T2 (en) 1998-08-31 1998-08-31 BOLOMETER WITH REFLECTIVE LAYER
EP98941893A EP1131613B1 (en) 1998-08-31 1998-08-31 Bolometer including a reflective layer
PCT/KR1998/000267 WO2000012986A1 (en) 1998-08-31 1998-08-31 Bolometer including a reflective layer
US09/146,254 US6198099B1 (en) 1998-08-31 1998-09-03 Bolometer including a reflective layer

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
PCT/KR1998/000267 WO2000012986A1 (en) 1998-08-31 1998-08-31 Bolometer including a reflective layer
US09/146,254 US6198099B1 (en) 1998-08-31 1998-09-03 Bolometer including a reflective layer

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WO2000012986A1 true WO2000012986A1 (en) 2000-03-09

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004522162A (en) * 2001-06-01 2004-07-22 レイセオン・カンパニー Improved high-speed, multi-level uncooled bolometer and method of manufacturing the same
CN109596225A (en) * 2018-12-20 2019-04-09 西安工业大学 A kind of infrared detector and preparation method thereof with high-effect resonant cavity

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3080093B2 (en) * 1998-09-01 2000-08-21 日本電気株式会社 Oxide thin film for bolometer and infrared sensor using the oxide thin film
JP2001264441A (en) * 2000-01-14 2001-09-26 Seiko Instruments Inc Calorimeter and manufacturing method therefor
US7075079B2 (en) 2001-06-27 2006-07-11 Wood Roland A Sensor for dual wavelength bands
WO2005034248A1 (en) * 2003-10-09 2005-04-14 Ocas Corp. Bolometric infrared sensor having two layer structure and method for manufacturing the same
FR2875298B1 (en) * 2004-09-16 2007-03-02 Commissariat Energie Atomique THERMAL DETECTOR FOR ELECTROMAGNETIC RADIATION COMPRISING AN ABSORBENT MEMBRANE FIXED IN SUSPENSION
US7442933B2 (en) 2005-02-03 2008-10-28 Lin Alice L Bolometer having an amorphous titanium oxide layer with high resistance stability
US7622717B2 (en) * 2007-08-22 2009-11-24 Drs Sensors & Targeting Systems, Inc. Pixel structure having an umbrella type absorber with one or more recesses or channels sized to increase radiation absorption
KR101910573B1 (en) * 2012-12-20 2018-10-22 삼성전자주식회사 Infrared detector including broadband light absorber
FR3017456B1 (en) * 2014-02-12 2017-06-23 Commissariat Energie Atomique BOLOMETRIC DETECTOR WITH MIM STRUCTURE INCLUDING A THERMOMETER ELEMENT
SG11201705483YA (en) * 2015-01-09 2017-08-30 Apple Inc Polarization selective, frequency selective, and wide dynamic range detectors, imaging arrays, readout integrated circuits, and sensor systems
KR102120912B1 (en) 2018-11-28 2020-06-09 한국과학기술원 A MEMS Device With A Curved Reflection Layer And The Manufacturing Method of the MEMS Device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0354369A2 (en) * 1988-08-12 1990-02-14 Texas Instruments Incorporated Infrared detector
JPH10111178A (en) * 1996-10-08 1998-04-28 Nikon Corp Thermal infrared ray sensor and image sensor using it

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3415994A (en) * 1966-10-28 1968-12-10 Navy Usa Dual element infrared detector
US5300915A (en) * 1986-07-16 1994-04-05 Honeywell Inc. Thermal sensor
US4922116A (en) * 1988-08-04 1990-05-01 Hughes Aircraft Company Flicker free infrared simulator with resistor bridges
US5010251A (en) * 1988-08-04 1991-04-23 Hughes Aircraft Company Radiation detector array using radiation sensitive bridges
US5021663B1 (en) * 1988-08-12 1997-07-01 Texas Instruments Inc Infrared detector
US5286976A (en) * 1988-11-07 1994-02-15 Honeywell Inc. Microstructure design for high IR sensitivity
US5054936A (en) * 1989-11-16 1991-10-08 Jacob Fraden Sensor for active thermal detection
JPH06160174A (en) * 1991-09-27 1994-06-07 Terumo Corp Infrared sensor
JP3062627B2 (en) * 1992-07-08 2000-07-12 ハネウエル・インコーポレーテッド Ultra-compact structure with high infrared sensitivity
US5426412A (en) * 1992-10-27 1995-06-20 Matsushita Electric Works, Ltd. Infrared detecting device and infrared detecting element for use in the device
US5760398A (en) * 1995-12-04 1998-06-02 Lockheed Martin Ir Imaging Systems, Inc. Infrared radiation detector having a reduced active area
JP3839487B2 (en) * 1995-11-15 2006-11-01 ロッキード マーティン アイアール イメージング システムズ インク Dual-band multilevel microbridge detector
US5584117A (en) * 1995-12-11 1996-12-17 Industrial Technology Research Institute Method of making an interferometer-based bolometer
US5831266A (en) * 1996-09-12 1998-11-03 Institut National D'optique Microbridge structure for emitting or detecting radiations and method for forming such microbridge structure
WO2000004354A1 (en) * 1998-07-14 2000-01-27 Daewoo Electronics Co., Ltd. Method for manufacturing a three level bolometer

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0354369A2 (en) * 1988-08-12 1990-02-14 Texas Instruments Incorporated Infrared detector
JPH10111178A (en) * 1996-10-08 1998-04-28 Nikon Corp Thermal infrared ray sensor and image sensor using it

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 8, no. 43 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004522162A (en) * 2001-06-01 2004-07-22 レイセオン・カンパニー Improved high-speed, multi-level uncooled bolometer and method of manufacturing the same
CN109596225A (en) * 2018-12-20 2019-04-09 西安工业大学 A kind of infrared detector and preparation method thereof with high-effect resonant cavity

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