WO2000005778A1

WO2000005778A1 - Insulated waveguide and semiconductor production equipment

Info

Publication number: WO2000005778A1
Application number: PCT/JP1998/003274
Authority: WO
Inventors: Yuichiro Ueno; Satoshi Takemori; Yasunori Nakano
Original assignee: Hitachi, Ltd.
Priority date: 1998-07-22
Filing date: 1998-07-22
Publication date: 2000-02-03
Also published as: KR20010024167A

Abstract

A method for producing an insulated waveguide while suppressing leakage of microwave without causing any trouble in the transmission of microwave and permitting various plasma sources employing a microwave waveguide to be cleaned at high speed, characterized in that at least two waveguides are coupled by a fitting structure through insulation, that the waveguide is provided with a waveguide for forming a standing microwave and a coupling part is located through insulation of at least two waveguides at a position of odd times of a quarter of the wavelength of a microwave in the waveguide from the short-circuitted termination thereof, that the waveguide is further provided with a waveguide for forming a standing microwave, the length of the waveguide being present to be equal to integer times of one half of the wavelength of a microwave in the waveguide, and a coupling part is located through insulation of at least two waveguides at a position of odd times of a quarter of the wavelength of a microwave in the waveguide from the short-circuitted termination thereof.

Description

Specification

Insulated waveguide and semiconductor manufacturing equipment

The present invention relates to an insulated waveguide and a semiconductor manufacturing apparatus, and particularly to an insulated waveguide suitable for transmitting a microphone mouth wave transmitted from a transmitter to a load, and using the insulated waveguide. Background Art on Semiconductor Manufacturing Equipment such as Plasma CVD Equipment

In semiconductor processes, high-throughput and miniaturization technologies are indispensable in order to reduce the price of products and ensure high reliability.

In recent years, semiconductor process technology using plasma has attracted attention, and it has been applied to submicron etching and various thin film formation, and has achieved good results. In addition, high-speed embedding between wires having a high aspect ratio becomes possible. The high-density plasma CVD apparatus, it is possible to relatively easily change the process by changing the gas type, low dielectric such as S i OF Yaa Amorphous force one carbon not only S i 0 ₂ film It is possible to form an interlayer insulating film with a high efficiency. In high-density plasma CVD equipment, cleaning technology is an important development issue for realizing high throughput and low particles. Chestnut one training is generally performed by a plasma of fluorine-based gas such as NF _3.

Fig. 5 shows the cleaning speed when RF (high frequency) is applied to the plasma reaction chamber wall in a high-density plasma CVD apparatus. Apply RF to the wall This proves to be an effective means. This is because the application of RF generated fluorine radical diions near the wall of the re-plasma reaction chamber, and the RF simultaneously increased the bias potential and struck the generated ions against the wall to increase the cleaning speed. Is increasing.

ECR plasma and surface wave plasma, which are a kind of high-density plasma, use a microphone mouth wave as a power source. In order to transmit this microphone mouth wave, a waveguide having a smaller loss of the microphone mouth wave and larger electric capacity than a coaxial cable is used, and is used for transmission of a high-output microwave for plasma generation or the like.

This waveguide is a hollow conductor tube, and its cross section is generally rectangular or circular. The material is made of aluminum or other conductor, and a microwave-generating oscillator and a microphone-absorbing load are absorbed. And are electrically connected. Waveguides are not only straight, but also have various configurations, such as corners such as E corners and H corners, and T-branches. These are connected to transmit the microphone mouth wave to the load.

The connection of these various waveguide components generally uses a flange or the like defined in the JIS standard. The issues in connecting the waveguides are to minimize the leakage of the microphone mouth wave and to prevent the transmission of the microphone mouth wave.

A choke flange is known as one of the structures for solving the above problems. Fig. 4 shows the general structure of this choke flange. As shown in Fig. 4, the choke flange is formed by providing an L-shaped waveguide 3a outside one waveguide 2a and joining the two waveguides 1a and 2a. I have. Of the L-shaped waveguide 3a, the length of the waveguide parallel to the waveguide perpendicular to the waveguide is about 1 Z4, which is the wavelength of the microphone mouth wave, and it is indispensable at this waveguide junction. In the past, this choke flange was commonly used to insulate waveguides because of the possibility of inserting edges.

By the way, as described above, since the waveguide for transmitting the microwave is made of aluminum or the like and the oscillator and the load are electrically connected, the waveguide is electrically connected to the load side where the waveguide is joined. Can not be added. In other words, in high-density plasma using microphone mouth waves, RF cannot be applied to the wall of the plasma reaction chamber on which the waveguide is mounted, so that cleaning of the wall of the plasma reaction chamber cannot be performed. Become.

In addition, it is possible to insulate by inserting an insulator into the waveguide junction of the choke flange. ',' The choke flange is one-wavelength of the microwave in the direction perpendicular to and parallel to the waveguide. A waveguide length of about Z4 is required, and an increase in size is inevitable. In particular, semiconductor manufacturing equipment must be used in a clean room, and miniaturization of equipment is an important issue as well as low cost. The connection of the waveguide through which microwaves pass is disclosed in Japanese Utility Model Laid-Open Publication No. 63-131401, and the structure for preventing leakage of microphone mouth waves is disclosed in Japanese Utility Model Application Laid-Open Publication No. 62-126831. I have.

The present invention has been made in view of the above points, and its purpose is to not only enable high-speed cleaning of various plasma sources using a microwave waveguide, but also reduce the amount of microwave leakage. An object of the present invention is to provide an insulated waveguide that is small and does not hinder microwave transmission, and a semiconductor manufacturing apparatus using the insulated waveguide. Disclosure of the invention

In order to achieve the above object, an insulated waveguide according to the present invention has a structure in which at least two waveguides are connected to each other via an insulating structure. A waveguide for forming a standing wave of a microwave is provided in the waveguide, and at least two waveguides are provided from the short-circuited end of the waveguide at a position which is an odd multiple of a quarter of the wavelength in the waveguide of the microphone mouth wave. The coupling portion is located via the insulation of the waveguide, and further, a waveguide for forming a standing wave of the microphone mouth wave is provided in the waveguide, and the length of the waveguide is set to the length of the microwave mouth wave. The wavelength is set to an integral multiple of one-half of the wavelength in the waveguide, and at least two at a position that is an odd multiple of one-fourth of the wavelength in the waveguide of the microphone mouth wave from the short-circuit end of the waveguide. It is characterized in that a coupling portion is located via insulation of the waveguide.

According to another aspect of the present invention, there is provided a semiconductor manufacturing apparatus, comprising: a microwave oscillator that generates a microwave; a waveguide that transmits a microwave wave from the microwave oscillator; A plasma processing apparatus for generating plasma by a microwave from a tube to execute various processes, and a high-frequency oscillator for applying a high frequency to a wall of a plasma reaction chamber of the plasma processing apparatus; The portion is formed of an insulated waveguide that insulates in the middle thereof, and the insulated waveguide is configured as described above.

In the present invention, since at least two waveguides are connected via insulation, high-speed cleaning of various plasma sources is possible, and furthermore, since they are connected by a fitting structure, a microphone mouth wave can be reduced. An insulated waveguide that has little leakage and does not hinder microwave transmission can be obtained. BRIEF DESCRIPTION OF THE FIGURES

FIG. 1 is a cross-sectional view showing one embodiment of the insulated waveguide of the present invention, FIG. 2 is a cross-sectional view taken along line X--X of FIG. 1, and FIG. Fig. 4 is a sectional view showing a conventional waveguide, Fig. 5 Is a characteristic diagram showing the relationship between the RF power applied to the plasma reaction chamber wall and the cleaning speed, FIG. 6 is a diagram showing the relationship between the distance from the short-circuited end in the waveguide and the impedance, and FIG. FIG. 9 is a cross-sectional view showing another embodiment of the insulated waveguide of the present invention. FIG. 8 is a cross-sectional view showing still another embodiment of the insulated waveguide of the present invention. FIG. 10 is a characteristic diagram showing the amount of microwave leakage measured at a position around the insulated waveguide of the embodiment, FIG. 10 is a cross-sectional view showing still another embodiment of the insulated waveguide of the present invention, and FIG. Sectional view showing one embodiment of the plasma CVD apparatus using the insulated waveguide of the present invention. FIG. 12 is a schematic diagram showing a system simulating the point A of the insulated waveguide shown in FIG. 1 under a short-circuit condition. Fig. 13 shows a waveguide that was simulated using the system shown in Fig. 12 and examined the effect of the waveguide on the transmission of microphone mouth-waves in the waveguide. Characteristic diagram showing the relationship between the value of the AC distance normalized by wavelength λ and the reflection coefficient.Fig. 14 shows a system simulating the insulated waveguide に point shown in Fig. 1 under open conditions. Fig. 15 is a schematic configuration diagram, and Fig. 15 is a simulation of the system shown in Fig. 14 to examine the leakage rate in the waveguide. FIG. 4 is a characteristic diagram showing the relationship of. BEST MODE FOR CARRYING OUT THE INVENTION

Hereinafter, an embodiment of the present invention will be described with reference to the drawings. Although the present invention is applicable to various semiconductor manufacturing apparatuses, for example, a plasma CVD apparatus, an etching apparatus, and the like, the present embodiment will be described using a plasma CVD apparatus as an example. Fig. 3 shows the configuration of the plasma CVD system. As shown in the figure, this configuration consists of a microwave oscillator 11 that generates microwaves, an isolator 10 that absorbs reflected waves, a detector 9 that measures the incident and reflected microphone mouth-wave power, and matching with the load impedance. Matching device 8 to insulate the waveguide It consists of an edge waveguide 5, a plasma reaction chamber 6 for generating plasma and performing various processes, and an RF oscillator 7 for applying RF to the wall of the plasma reaction chamber 6.

Except for the RF oscillator 7, the other components are a waveguide structure for introducing microwaves as the power of the plasma source into the plasma reaction chamber 6 that executes various processes, and the wall of the plasma reaction chamber 6 is accelerated. An insulating waveguide 5 is attached for the purpose of applying RF for dry cleaning. FIG. 11 shows details of the plasma reaction chamber 6 to which the insulating waveguide 5 is attached. In the figure, reference numeral 6 denotes a plasma reaction chamber in which plasma is formed in a substantially cylindrical shape. This plasma reaction chamber 6 has side walls 21, a top plate 22, a waveguide section 23 a23 b, and a gas inlet 27. a, 27 b, and insulating plate 26. Waveguides 23a and 23b for introducing microwaves are integrally formed on the side wall 21. An insulating waveguide 5 is connected to the waveguides 23a and 23b. A quartz window 28 is provided at the boundary between the two, for passing microwaves and sealing vacuum. A substrate electrode 24 for holding a substrate (not shown) is provided in the plasma reaction chamber 6 at a position facing the top plate 22, and the waveguide portions 23 a and 23 b are substantially flush with the surface of the substrate. The microphone mouth wave is provided in parallel so as to be introduced into the plasma reaction chamber 6. Further, the plasma reaction chamber 6 is installed on the base plate 30 via the insulating plate 26 and is evacuated by the evacuation device 29 provided below the base plate 30. I have. The side wall 21 is electrically insulated from the base plate 30 via an insulator 26, and the top plate 22 and the substrate electrode 24 are at a reference potential. Electrically isolated from 30. The high frequency power supplies 7 1a and 7 1b apply, for example, a high frequency voltage of 13.56 Mhz to the top plate 22 and the substrate electrode 24 via matching boxes 72a and 72b, respectively. It is connected to the. The top plate 22 is connected to the high-frequency power supply 71a via the first switching switch 73a or grounded. The side wall 21 is connected to or grounded to the high-frequency power supply 71a via the second switching switch 73b. The first switching switch 73 a and the second switching switch 73 b are switched when a process or cleaning is performed by the controller 74. The raw material gas in the process processing or cleaning is introduced into the plasma reaction chamber 6 from the gas inlets 27a and 27b provided in the side wall 21.

On the disk-shaped top plate 22, in order to form a cusp magnetic field, the permanent magnets 25 are arranged concentrically with their polarities changed in order. On the other hand, also around the side wall 21 of the plasma reaction chamber 6, a plurality of permanent magnets 25 for changing the polarities to each other to form a cusp magnetic field are provided. The material of the plasma reactor 30 and the base plate 30 is aluminum, and although not shown, a heater, water cooling, or the like is used to adjust the wall temperature to be constant. Inside the microwave waveguides 23a and 23b, there are provided dielectrics 29 through which microphone mouth waves pass, and the tip of the dielectric 29 on the side of the plasma reaction chamber 6 is connected to the plasma reaction chamber. It is installed so as to roughly match the inner surface of 6.

Next, the insulating waveguide 5 employed in the above-described plasma CVD device will be described with reference to FIGS. 1 and 2. FIG.

As shown in the figure, the insulating waveguide 5 comprises a waveguide 2 on the side of the microwave oscillator 11 and a waveguide 1 on the side of the plasma reaction chamber 6, and these are insulators for electrically separating the two. A waveguide 3 is provided between the waveguide 1 and the waveguide 2 so that a standing wave is generated between the waveguide 1 and the waveguide 2. The waveguide 3 has a substantially L-shaped cross section formed by a portion perpendicular to the direction of the microwave mouthwave transmission in the waveguide and a portion parallel to the direction, and the parallel portion is vertical. It is longer than the part. As can be seen from FIG. 2, the waveguide 3 and the insulator 4 are formed in a rectangular shape so as to surround the rectangular waveguide. In this embodiment, the insulator 4 uses a teflon having good high-frequency characteristics, and not only insulates the waveguides 1 and 2 but also fixes the waveguide 2 in the waveguide 1. It also plays the role of a sponsor.

In the insulating waveguide 5 of the present embodiment, the length AC of the waveguide 3 is defined to be an integral multiple of half the wavelength of the microwave propagating through the waveguide, and the length AC of the insulating portion B and the short-circuit end C is defined. The length is specified to be an odd multiple of 1/4 of the wavelength of the microphone mouth wave propagating through the waveguide.

Hereinafter, this will be described. First, the reason why the length A C of the waveguide 3 is defined as an integral multiple of half the wavelength of the microwave propagating in the waveguide will be described.

A simulation was performed using a system simulated as shown in Fig. 12 with point A in Fig. 1 as a short-circuit condition, and the effect of the waveguide on the transmission of the microphone mouth wave of the waveguide (the existence of the waveguide Causes reflection in the microphone mouth wave in the waveguide). The results are shown in FIG. In Fig. 13, the horizontal axis shows the value obtained by normalizing the distance between A and C of the waveguide by wavelength λ, and the vertical axis shows the reflection coefficient (1 = perfect reflection, 0 = reflection zero) of the waveguide. If the reflection coefficient is zero, the reflection of the microphone mouth wave is zero, and the presence of the waveguide does not affect the microwave transmission in the waveguide, and this condition is satisfied in Fig. 13. It can be seen that this condition is satisfied when ACZA = 0, 0.5, 1 if the length of the waveguide is an integral multiple of ぇ 2 (Χ0, 1, 2—).

Next, the reason why the lengths of the insulating part Β and the short-circuited end C are specified as odd-numbered quarters of the microwave propagating in the waveguide will be explained. Point B in Fig. 1 was set to the open condition, and a simulation was performed using a simulated system as shown in Fig. 14, and the leakage rate of the microphone mouth wave in the waveguide was examined. The results are shown in FIG. In Fig. 15, the horizontal axis shows the normalized value of the distance between the BCs of the waveguides at the wavelength λ, and the vertical axis shows the microwave leakage rate (leakage power input power) (the product of the microwave input amount and the actual Leakage (W)). As is evident from Fig. 15, B CZ A = around 0.25, 0.75, 1.25, that is, the BC distance is an odd multiple of Λ ノ 4 (XI, 3, 5, ... It can be seen that the leakage rate of the microphone mouth wave is minimized near ()).

As can be seen from FIG. 15, the leakage rate is minimized not only at the point where the distance between B and C is an odd-numbered multiple of Peno4, but has a certain allowable width. For example, consider the point of 0.25.

The leakage limit at a distance of 5 cm from the waveguide in the radial direction is 5 mW / cm ² (according to JIS C 9250), and leakage from one point (the most severe condition. Assuming the case of leakage from the insulating surface of

Ρ Χ α <3 Χ (4 Χ π Χ δ ² ) → α <1 0 0 π β /

(However, Ρ: Power (W), α: Leakage rate,: Leakage limit (W / cm ² )) If P-100 W 0, 3 = 5 mW / cm ² , α <0.0 0 15 7, and the allowable width of the distance between the BCs from FIG. 15 is 0.22λ <<0.263 3.

FIG. 9 shows the result of measuring the amount of microwave leakage of the insulated waveguide of this example. The measurement results shown in Fig. 9 are for the case where the sum of the incident and reflected powers of the microwave is 1 kW, and the leakage amount is measured at a position 5 cm away from the exposed part of the insulator from which the microwave leaks. It was done. As is clear from Fig. 9, the amount of microwave leakage is 1 (mWZcm ² ) or less, C 9 2 5 0 standard of "microwave oven" meets (microphone port wave leakage amount 5 (m W / cm ²⁾ be less is).

Fig. 6 shows the impedance of the short-circuited waveguide. From the figure, the position of the quarter-wavelength from the short-circuited end of the waveguide is open, and the short-circuit is further shorted at the quarter-position. It turns out to be in a state, and it is understood that opening and short-circuiting are repeated periodically every quarter wavelength from the short-circuit end. As shown in Fig. 7, when the waveguide 3 is provided around the rectangular waveguides 1 and 2, the waveguide having an integral multiple of one-half wavelength of the microwave is the same as the waveguides 1 and 2. A short circuit occurs at the wall surface (near junction A), the effect on the microwave transmission in the waveguide is small, and the intensity of the microwave propagating to the waveguide 3 is smaller than in the waveguide. This is because, when the waveguide 3 is viewed from the waveguides 1 and 2, the junction A is in a short-circuit state, that is, under the same condition as the conductor wall, and it is difficult for the microphone mouth wave to enter the waveguide 3. That's why.

On the other hand, if the junction B of the waveguides 1 and 2 is located at an odd multiple of one-quarter wavelength from the short-circuit end C, the junction B is open and the leakage of the microphone mouth wave is small. When the junction B is in the open / closed state, the current flowing perpendicularly to the junction surface on the wall surface of the waveguide 3 becomes small, and the radiation clogging leakage of the microphone mouth wave is suppressed to a small value.

Further, in the present embodiment, it is also meaningful to position the insulating position B of the waveguide at the linear portion. In other words, the generally used choke flange as shown in Fig. 4 has a microwave leakage rate of 0.0033 because the insulating part of the waveguide is at the corner. In the insulated waveguide of this embodiment, since the insulating position B is located in the straight line portion, the leak rate of the microphone mouth wave is 0.000013 (the leak rate of the microwave is based on the simulation result). By positioning the insulation position B of the Can be kept low.

As described above, according to the present embodiment, since the waveguide is installed in the direction along the waveguide, the dimension in the direction perpendicular to the waveguide is very small, and the waveguide is placed in the plasma reaction chamber. Semiconductor manufacturing equipment such as plasma CVD equipment, including waveguides, can be miniaturized because they can be arranged close to each other. Also, since the other waveguide is inserted into one of the waveguides via an insulator (fitting structure), it is possible to easily join the waveguides. In other words, in general waveguide joining, it is necessary to join the flange portion with a plurality of nuts in order to reduce microwave leakage. There is no need to fix the waveguide, and the joining of the waveguides can be performed with a mating structure, which simplifies and removes the waveguide very easily.

Also, this property does not limit the shape of the waveguide. Therefore, the waveguide 13 may be provided in a direction perpendicular to the waveguides 11 and 12 as shown in FIG. 8 without being limited to the shape shown in FIG. The length of must be an integral multiple of one-half wavelength of the microwave, and the junction should be an odd multiple of one-quarter wavelength to reduce the current flowing vertically through the junction.

FIG. 10 shows another embodiment of the insulating waveguide of the present invention. In the embodiment shown in the figure, the insulating waveguide is miniaturized and integrated with the plasma reaction chamber by using a quartz window for vacuum sealing of the plasma reaction chamber as the waveguide of the insulating waveguide. In the figure, the left side of the quartz 14 is a plasma reaction chamber, and the quartz 14 simultaneously functions as a vacuum seal for the plasma reaction chamber and as an insulating waveguide. The quartz 14 and the waveguide 18 are fixed to the wall 19 of the plasma reaction chamber by an insulator 17 and mounting jigs 15 and 16. Even if the waveguide is filled with a dielectric material such as quartz, the law of the length AC of the waveguide and the distance BC from the short-circuit end to the waveguide connection portion do not change. In other words, the length AC of the waveguide is an integral multiple of one-half the wavelength of the microwave in the waveguide, and the distance BC from the short-circuit end to the waveguide connection is BC It should be an odd multiple of 1/4 of the wavelength. Since the wavelength in a dielectric such as quartz becomes shorter in proportion to the half power of the dielectric constant of the dielectric, the size can be reduced by filling the waveguide with a dielectric such as quartz. .

In each of the embodiments described above, the waveguide is rectangular, but the invention is not limited to this, and the waveguide may be circular or coaxial. In addition to fixing the waveguide 1 in the waveguide 2 as shown in FIG. 1, the waveguide may be fixed with an insulating bolt, as shown in FIG. A structure in which the waveguide 2 is inserted into the waveguide 1 may be used. Further, the structure of the insulator is not limited to FIGS. 1 and 10. It can be changed according to the structure of the waveguide and the mounting jig, and it goes without saying that a space may be provided between the waveguides 1 and 2 without an insulator. Industrial applicability

According to the present invention described above, at least two waveguides are connected by a fitting structure via insulation, and a waveguide for forming a standing wave of a microwave is provided in the waveguide. The coupling portion is located at a position of an odd multiple of one-fourth of the wavelength in the waveguide of the microphone mouth wave from the short-circuited end in the waveguide via the insulation of at least two waveguides; Provides a waveguide for forming a standing wave of microwaves in a waveguide, and sets the length of the waveguide to an integral multiple of one-half of the wavelength of the microphone mouth wave in the waveguide; and From the short-circuit end in the waveguide Generate an insulated waveguide and a microphone so that at least the coupling part of the two waveguides via insulation is located at an odd multiple of 1/4 the wavelength in the waveguide A microwave mouth wave oscillator, a waveguide for transmitting the microphone mouth wave from the microphone mouth wave oscillator, a plasma processing apparatus for generating plasma by microwaves from the waveguide and executing various processes, A high-frequency oscillator for applying a high frequency to the wall surface of the plasma reaction chamber of the plasma processing apparatus, wherein a part of the waveguide is formed by an insulating waveguide that insulates the middle of the waveguide; Is configured as described above, so that it is possible not only to enable high-speed cleaning of various plasma sources using a microphone mouth-wave waveguide, but also to reduce the amount of microwave leakage, and Which hinders the transmission of waves An insulated waveguide without any material, and a semiconductor manufacturing apparatus using the same can be obtained.

Claims

The scope of the claims

1. In an insulated waveguide that is formed by connecting at least two waveguides via insulation and transmitting microwaves from a transmitter to a load,

The insulated waveguide, wherein the at least two waveguides are connected by a fitting structure via insulation.

2. In an insulated waveguide that is formed by connecting at least two waveguides via insulation and transmitting microwaves from a transmitter to a load,

A waveguide for forming a standing wave of a microphone mouth wave is provided in the waveguide, and at least a position of an odd multiple of a quarter of the wavelength in the waveguide of the microphone mouth wave from a short-circuit end in the waveguide. An insulated waveguide characterized in that a coupling portion between two waveguides via insulation is located.

3. In an insulated waveguide that is formed by connecting at least two waveguides via insulation and transmitting microwaves from a transmitter to a load,

A waveguide for forming a standing wave of microwave is provided in the waveguide, and the length of the waveguide is set to an integral multiple of half the wavelength of the microphone mouth wave in the waveguide, and Insulation characterized in that at least a coupling portion of at least two waveguides via insulation is located at a position from the short-circuited end of the waveguide to an odd multiple of one-fourth of the wavelength in the microwave waveguide. Waveguide.

4. An insulator is placed in the one waveguide, and the other waveguide is inserted into the insulator, and the two are fitted and connected by a structure. 4. The insulated waveguide according to claim 3, wherein

5. The insulated waveguide according to claim 3, wherein the waveguide is provided along the waveguide.

6. The insulated waveguide according to claim 3, wherein the waveguide is provided in a direction perpendicular to the waveguide.

7. The waveguide has a portion substantially perpendicular to the microwave transmission direction in the waveguide and a portion parallel to the microwave transmission direction, and has a substantially L-shaped cross-section. 4. The insulated waveguide according to claim 3, wherein the waveguide is elongated.

8. The insulated waveguide according to claim 3, wherein the insulating portion where the waveguides are connected to each other is located at a straight portion of the waveguide.

9. The insulated waveguide according to claim 3, wherein a dielectric is disposed in the waveguide.

10. Microwave oscillator that generates microwaves, waveguide that transmits microwaves from the microwave oscillator, and performs various processes by generating plasma by microwaves from the waveguides A semiconductor manufacturing apparatus comprising: a plasma processing apparatus; and a high-frequency oscillator that applies a high frequency to a wall of a plasma reaction chamber of the plasma processing apparatus.

A part of the waveguide is formed of an insulating waveguide that insulates the middle of the waveguide, and the insulating waveguide has a configuration described in claim 1, 2, or 3. Semiconductor manufacturing equipment.

11. The plasma processing apparatus includes: a plasma reaction chamber for generating plasma therein; a waveguide connected to the plasma reaction chamber for introducing a microwave for generating plasma; A dielectric that penetrates the microwaves and keeps the vacuum in the plasma reaction chamber; and a dielectric that surrounds the outer periphery of the waveguide, and at least a part of the microwave in the waveguide and the plasma reaction chamber. A first permanent magnet for forming an electron cyclone resonance magnetic field with respect to the wave, a plurality of second permanent magnets arranged around the plasma reaction chamber with different polarities, and a plurality of second permanent magnets formed in the plasma reaction chamber. A substrate that is placed facing the plasma that has been processed and that holds an object to be processed by the plasma 2. An electrode, and a power supply means capable of selectively connecting a plurality of power supply systems to a top plate portion forming a part of the plasma reaction chamber or a side wall portion. The semiconductor manufacturing apparatus according to 0.