WO1999067443A1 - Methods for etching an aluminum-containing layer - Google Patents
Methods for etching an aluminum-containing layer Download PDFInfo
- Publication number
- WO1999067443A1 WO1999067443A1 PCT/US1999/014026 US9914026W WO9967443A1 WO 1999067443 A1 WO1999067443 A1 WO 1999067443A1 US 9914026 W US9914026 W US 9914026W WO 9967443 A1 WO9967443 A1 WO 9967443A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- source gas
- flow rate
- aluminum
- processing chamber
- plasma processing
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12014—All metal or with adjacent metals having metal particles
- Y10T428/12028—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, etc.]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/249921—Web or sheet containing structurally defined element or component
- Y10T428/249953—Composite having voids in a component [e.g., porous, cellular, etc.]
- Y10T428/249954—With chemically effective material or specified gas other than air, N, or carbon dioxide in void-containing component
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- ing And Chemical Polishing (AREA)
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP99931856A EP1097257B1 (en) | 1998-06-24 | 1999-06-22 | Methods for etching an aluminum-containing layer |
DE69922658T DE69922658T2 (en) | 1998-06-24 | 1999-06-22 | Process for etching an aluminum-containing layer |
JP2000556081A JP2002519841A (en) | 1998-06-24 | 1999-06-22 | Method for etching aluminum-containing layer |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/103,498 | 1998-06-24 | ||
US09/103,498 US5994235A (en) | 1998-06-24 | 1998-06-24 | Methods for etching an aluminum-containing layer |
Publications (2)
Publication Number | Publication Date |
---|---|
WO1999067443A1 true WO1999067443A1 (en) | 1999-12-29 |
WO1999067443A9 WO1999067443A9 (en) | 2000-06-08 |
Family
ID=22295515
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US1999/014026 WO1999067443A1 (en) | 1998-06-24 | 1999-06-22 | Methods for etching an aluminum-containing layer |
Country Status (8)
Country | Link |
---|---|
US (2) | US5994235A (en) |
EP (2) | EP1475461A1 (en) |
JP (1) | JP2002519841A (en) |
KR (1) | KR100645908B1 (en) |
DE (1) | DE69922658T2 (en) |
ES (1) | ES2233055T3 (en) |
TW (1) | TW421828B (en) |
WO (1) | WO1999067443A1 (en) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7023021B2 (en) * | 2000-02-22 | 2006-04-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
US6789910B2 (en) | 2000-04-12 | 2004-09-14 | Semiconductor Energy Laboratory, Co., Ltd. | Illumination apparatus |
US6391790B1 (en) | 2000-05-22 | 2002-05-21 | Applied Materials, Inc. | Method and apparatus for etching photomasks |
US7115523B2 (en) * | 2000-05-22 | 2006-10-03 | Applied Materials, Inc. | Method and apparatus for etching photomasks |
JP2004503829A (en) * | 2000-06-15 | 2004-02-05 | アプライド マテリアルズ インコーポレイテッド | Method and apparatus for etching a metal layer on a substrate |
US7084066B1 (en) * | 2000-07-03 | 2006-08-01 | Cypress Semiconductor Corporation | Method of uniformly etching refractory metals, refractory metal alloys and refractory metal silicides |
JP4605554B2 (en) * | 2000-07-25 | 2011-01-05 | 独立行政法人物質・材料研究機構 | Mask material for dry etching |
US6551942B2 (en) | 2001-06-15 | 2003-04-22 | International Business Machines Corporation | Methods for etching tungsten stack structures |
US20030003374A1 (en) * | 2001-06-15 | 2003-01-02 | Applied Materials, Inc. | Etch process for photolithographic reticle manufacturing with improved etch bias |
US7183201B2 (en) | 2001-07-23 | 2007-02-27 | Applied Materials, Inc. | Selective etching of organosilicate films over silicon oxide stop etch layers |
WO2003021659A1 (en) * | 2001-09-04 | 2003-03-13 | Applied Materials, Inc. | Methods and apparatus for etching metal layers on substrates |
WO2003089990A2 (en) * | 2002-04-19 | 2003-10-30 | Applied Materials, Inc. | Process for etching photomasks |
KR20040012451A (en) * | 2002-05-14 | 2004-02-11 | 어플라이드 머티어리얼스, 인코포레이티드 | Methods for etching photolithographic reticles |
KR100464430B1 (en) * | 2002-08-20 | 2005-01-03 | 삼성전자주식회사 | Method of etching aluminum layer using hard mask and metalization method for semiconductor device |
US7270761B2 (en) * | 2002-10-18 | 2007-09-18 | Appleid Materials, Inc | Fluorine free integrated process for etching aluminum including chamber dry clean |
WO2004086143A2 (en) * | 2003-03-21 | 2004-10-07 | Applied Materials, Inc. | Multi-step process for etching photomasks |
US7077973B2 (en) * | 2003-04-18 | 2006-07-18 | Applied Materials, Inc. | Methods for substrate orientation |
US20040229470A1 (en) * | 2003-05-14 | 2004-11-18 | Applied Materials, Inc. | Method for etching an aluminum layer using an amorphous carbon mask |
US7521000B2 (en) * | 2003-08-28 | 2009-04-21 | Applied Materials, Inc. | Process for etching photomasks |
US7829243B2 (en) * | 2005-01-27 | 2010-11-09 | Applied Materials, Inc. | Method for plasma etching a chromium layer suitable for photomask fabrication |
US8293430B2 (en) * | 2005-01-27 | 2012-10-23 | Applied Materials, Inc. | Method for etching a molybdenum layer suitable for photomask fabrication |
US7435681B2 (en) * | 2006-05-09 | 2008-10-14 | Macronix International Co., Ltd. | Methods of etching stacks having metal layers and hard mask layers |
KR100944846B1 (en) * | 2006-10-30 | 2010-03-04 | 어플라이드 머티어리얼스, 인코포레이티드 | Mask etch process |
US8808562B2 (en) | 2011-09-12 | 2014-08-19 | Tokyo Electron Limited | Dry metal etching method |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2026393A (en) * | 1978-07-31 | 1980-02-06 | Western Electric Co | Dry etching process using plasma |
JPS58213877A (en) * | 1982-06-05 | 1983-12-12 | Anelva Corp | Method for dry etching aluminum |
US4462882A (en) * | 1983-01-03 | 1984-07-31 | Massachusetts Institute Of Technology | Selective etching of aluminum |
EP0502523A2 (en) * | 1991-03-05 | 1992-09-09 | Siemens Aktiengesellschaft | Method for anisotropic dry etching of aluminium as well as aluminium alloys containing path levels in integrated semiconductor circuits |
US5221430A (en) * | 1991-03-29 | 1993-06-22 | Sony Corporation | Dry etching method |
EP0622477A1 (en) * | 1993-02-24 | 1994-11-02 | Applied Materials, Inc. | Etching aluminum and its alloys using HC1, C1-containing etchant and N2 |
EP0824269A2 (en) * | 1996-08-06 | 1998-02-18 | International Business Machines Corporation | Method for etching an Al metallization by a C12/HC1 based plasma |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
IT1203089B (en) * | 1976-03-03 | 1989-02-15 | Int Plasma Corp | PROCEDURE AND EQUIPMENT TO PERFORM CHEMICAL REACTIONS IN THE REGION OF THE LUMINESCENT DISCHARGE OF A PLASMA |
JPS57170534A (en) * | 1981-04-15 | 1982-10-20 | Hitachi Ltd | Dry etching method for aluminum and aluminum alloy |
JPH08130206A (en) * | 1994-10-31 | 1996-05-21 | Sony Corp | Plasma etching method of al based metal layer |
-
1998
- 1998-06-24 US US09/103,498 patent/US5994235A/en not_active Expired - Lifetime
-
1999
- 1999-06-22 WO PCT/US1999/014026 patent/WO1999067443A1/en active IP Right Grant
- 1999-06-22 ES ES99931856T patent/ES2233055T3/en not_active Expired - Lifetime
- 1999-06-22 EP EP04254796A patent/EP1475461A1/en not_active Withdrawn
- 1999-06-22 EP EP99931856A patent/EP1097257B1/en not_active Expired - Lifetime
- 1999-06-22 DE DE69922658T patent/DE69922658T2/en not_active Expired - Fee Related
- 1999-06-22 KR KR1020007014489A patent/KR100645908B1/en not_active IP Right Cessation
- 1999-06-22 JP JP2000556081A patent/JP2002519841A/en active Pending
- 1999-06-23 TW TW088110580A patent/TW421828B/en not_active IP Right Cessation
- 1999-06-24 US US09/344,168 patent/US6242107B1/en not_active Expired - Lifetime
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2026393A (en) * | 1978-07-31 | 1980-02-06 | Western Electric Co | Dry etching process using plasma |
JPS58213877A (en) * | 1982-06-05 | 1983-12-12 | Anelva Corp | Method for dry etching aluminum |
US4462882A (en) * | 1983-01-03 | 1984-07-31 | Massachusetts Institute Of Technology | Selective etching of aluminum |
EP0502523A2 (en) * | 1991-03-05 | 1992-09-09 | Siemens Aktiengesellschaft | Method for anisotropic dry etching of aluminium as well as aluminium alloys containing path levels in integrated semiconductor circuits |
US5221430A (en) * | 1991-03-29 | 1993-06-22 | Sony Corporation | Dry etching method |
EP0622477A1 (en) * | 1993-02-24 | 1994-11-02 | Applied Materials, Inc. | Etching aluminum and its alloys using HC1, C1-containing etchant and N2 |
EP0824269A2 (en) * | 1996-08-06 | 1998-02-18 | International Business Machines Corporation | Method for etching an Al metallization by a C12/HC1 based plasma |
Non-Patent Citations (1)
Title |
---|
PATENT ABSTRACTS OF JAPAN vol. 008, no. 062 (C - 215) 23 March 1984 (1984-03-23) * |
Also Published As
Publication number | Publication date |
---|---|
EP1097257A1 (en) | 2001-05-09 |
US5994235A (en) | 1999-11-30 |
KR20010053044A (en) | 2001-06-25 |
ES2233055T3 (en) | 2005-06-01 |
DE69922658D1 (en) | 2005-01-20 |
EP1097257B1 (en) | 2004-12-15 |
WO1999067443A9 (en) | 2000-06-08 |
TW421828B (en) | 2001-02-11 |
EP1475461A1 (en) | 2004-11-10 |
US6242107B1 (en) | 2001-06-05 |
DE69922658T2 (en) | 2005-12-08 |
KR100645908B1 (en) | 2006-11-17 |
JP2002519841A (en) | 2002-07-02 |
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