WO1999066523A1 - Dispositif emetteur d'electrons, source emettrice d'electrons, affichage d'images ainsi que procede de production de ceux-ci - Google Patents
Dispositif emetteur d'electrons, source emettrice d'electrons, affichage d'images ainsi que procede de production de ceux-ci Download PDFInfo
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- WO1999066523A1 WO1999066523A1 PCT/JP1999/003240 JP9903240W WO9966523A1 WO 1999066523 A1 WO1999066523 A1 WO 1999066523A1 JP 9903240 W JP9903240 W JP 9903240W WO 9966523 A1 WO9966523 A1 WO 9966523A1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
- H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/304—Field-emissive cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/30—Cold cathodes
- H01J2201/304—Field emission cathodes
- H01J2201/30403—Field emission cathodes characterised by the emitter shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/30—Cold cathodes
- H01J2201/304—Field emission cathodes
- H01J2201/30446—Field emission cathodes characterised by the emitter material
- H01J2201/30453—Carbon types
- H01J2201/30469—Carbon nanotubes (CNTs)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/30—Cold cathodes
- H01J2201/319—Circuit elements associated with the emitters by direct integration
Definitions
- Electron-emitting device electron-emitting source, image display device, and manufacturing method thereof
- the present invention relates to an electron-emitting device that emits electrons and a method of manufacturing the same, and more particularly, to an electron-emitting device formed using particles containing a carbon material having a hexacarbon ring structure or an aggregate thereof, and a method of manufacturing the same. Furthermore, the present invention relates to an electron emission source configured by using a plurality of the above-described electron emission elements, an image display device configured by using such an electron emission source, and a method of manufacturing the same. . Background art
- micro-sized micro-electron-emitting devices have been actively developed as an electron source to replace electron guns for high-definition thin displays and as an electron source for micro vacuum devices capable of high-speed operation (emits). .
- the electron-emitting device used was a “heat-emitting device,” which emits electrons by applying a high voltage to a material such as tungsten that has been heated to a high temperature.
- the “cold cathode” type electron-emitting device which can emit electrons even at a low voltage without the need to perform, is being actively researched and developed.
- FE type field emission type
- MIM type or MIS type tunnel injection type
- SCE type surface conduction type
- a voltage is applied to the gate electrode and an electric field is applied to the electron-emitting portion, so that electrons are emitted from a cone-shaped protrusion made of silicon (Si) or molybdenum (Mo).
- Si silicon
- Mo molybdenum
- a MIM or MIS type electron-emitting device a stacked structure including a metal, an insulator layer, a semiconductor layer, and the like is formed, and electrons are emitted from the metal layer side. It is injected and passed through the euphoria using the tunnel effect, and is extracted from the electron-emitting area.
- a current flows in an in-plane direction of a thin film formed on a substrate, and an electron-emitting portion formed in advance (generally, minute fine particles existing in a current-carrying region of the thin film) is formed. Electrons are emitted from the crack).
- All of the device structures of these cold cathode type electron-emitting devices have a feature that the structure can be reduced in size and integrated by using a fine processing technique.
- the characteristics required for a cold-cathode type electron-emitting device are that a high current can be obtained stably by driving at low voltage and low power consumption, but at the same time, a configuration that can be manufactured at low cost is also necessary. is there.
- the configuration disclosed in, for example, Japanese Patent Application Laid-Open No. Hei 7-282715 is a schematic diagram of such a cold-cathode type electron-emitting device.
- the configuration according to the prior art shown in FIG. 1 attempts to use a diamond that can have a negative electron affinity by performing a specific process as an electron emission source, instead of a diamond film.
- the use of diamond particles is intended to simplify manufacturing and reduce costs.
- a conductive layer 112 serving as an electrode is formed on a substrate] .11, and an electron emission portion 1 made of diamond particles 1] .3 is further formed thereon. 14 are formed.
- the diamond particles 1 13 have a negative electron affinity due to the prescribed treatment.
- An electron extraction electrode (not shown) is provided so as to face the diamond particles: 113, and by applying a potential to the electron extraction electrode, an electron emission portion 1 composed of diamond particles 113: 1. Extract electrons from 4.
- the diamond particles 1 13 have negative electron affinity on the surface, so the diamond particles from the conductive layer 1 ⁇ 2]: 13 can easily enter the diamond particles 1 ⁇ 3 Expected to be released.
- the configuration of Fig. 1 Then, in theory, it is expected that electrons can be extracted without applying a high voltage to the opposing electron extraction electrode (not shown).
- the configuration shown in FIG. 1 can be easily and inexpensively formed because the electron emission portions 1: 14 are formed using the diamond particles 113.
- the constituent materials of the electron-emitting portion included in the electron-emitting device are: (1) easy to emit electrons with a relatively small electric field (that is, efficient electron emission is possible); It is required to have characteristics such as good current stability, and (3) small change over time in electron emission characteristics.
- the above-described conventional electron-emitting devices reported so far have a problem that their operating characteristics largely depend on the shape of the electron-emitting portion and change with time.
- Electrons must cross the electron barrier at the interface of For this reason, in order to extract electrons from the diamond particles 1.13 composing the electron emitting portion 114 to the outside, it is necessary to apply a high voltage to the opposing electron extraction electrodes as in the conventional case. Furthermore, in the configuration of FIG. 1, since the individual diamond particles 113 function as an electron emission source, in order to realize uniform and stable electron emission, the uniformity of the application state of the diamond particles 113 is required. And to obtain stability. However, in practice, it is difficult to achieve. In particular, the stability of the adhered state is greatly affected by the size of the diamond particles 113. For example, if the particle size is on the order of microns, diamond particles 113 will be missing, making it difficult to achieve stable electron emission.
- the present invention has been made in order to solve the above-mentioned problems, and has as its object to provide (1) an electron-emitting device capable of stably obtaining a high current by driving at a low voltage; (2) By using particles or agglomerates of particles containing a carbon material having a six-carbon ring structure as the electron-emitting portion, it can be manufactured at low cost and can efficiently emit electrons. Providing an electron-emitting device having a high
- an electron-emitting device including at least: a first electrode; and an electron-emitting portion disposed on the first electrode.
- the electron emission portion is composed of particles or an aggregate thereof, and the particles include a carbon material having a hexacarbon ring structure, whereby the above-mentioned object is achieved.
- the light emitting device further includes a second electrode provided near the electron-emitting portion.
- the electron emission section is fixed to the first electrode by a fixing material.
- the surface of the first electrode has an uneven shape, and the electron emission portions are arranged along the uneven shape.
- the carbon material having a six-carbon ring structure has graphite as a main component.
- the graphite is a highly oriented graphite.
- the electron-emitting portion is disposed on the first electrode in a state where the cut portion of the ⁇ bond in the six-carbon ring structure faces in the electron-emitting direction.
- the carbon material having a six-carbon ring structure has graphite as a main component, and the electron emitting portion has a normal to the lamination surface of the graphite almost equal to the surface of the first electrode. It is arranged on the first electrode so as to be parallel.
- the carbon material having a six-carbon ring structure contains graphite as a main component.
- the electron emitting portion is disposed on the first electrode in such a manner that a normal to the lamination surface of the graphite is substantially perpendicular to the surface of the first electrode.
- the carbon material having a six-carbon ring structure is mainly composed of carbon nanotubes.
- the tip of the carbon nanotube protrudes from the surface of the particle.
- the tip of the carbon nanotube is open without terminating.
- the carbon nanotube is produced by purifying a bulk carbon containing the carbon nanotube formed by arc discharge between carbon electrodes.
- the carbon nanotube is formed by a plasma CVD method utilizing a catalytic action.
- the fixing material is a vehicle.
- the first electrode includes an element capable of forming a carbon compound. In one embodiment, the first electrode has a multilayer structure including at least one semiconductor layer.
- an electron-emitting device comprising at least: a first electrode; and an electron-emitting portion disposed on the second electrode, wherein the electron-emitting portion is formed of particles or The electron-emitting portion is constituted by the aggregate, and the electron-emitting portion is fixed on the first electrode by a fixing material, whereby the above-mentioned object is achieved.
- the particles include a carbon material having a six-carbon ring structure.
- the fixing material is a vehicle.
- the fixing material is present only on the fixing portion of the electron emission portion on the surface of the first electrode, and is not present on other portions of the surface of the first electrode.
- a step of forming a first electrode and a step of arranging an electron-emitting portion composed of particles or an aggregate thereof on the first electrode are reduced.
- the above-mentioned object is achieved by using, as the particles, particles made of a material containing a carbon material having a hexacarbon ring structure.
- the method further includes a step of installing a second electrode near the electron-emitting portion.
- the step of disposing the electron-emitting portion includes the step of fixing the electron-emitting portion to the first electrode with a fixing material.
- a vehicle is used as the fixing material.
- the method further includes the step of forming an uneven shape on the surface of the first electrode, wherein the electron-emitting portion is arranged along the uneven shape.
- the concave shape is formed by sandblasting.
- the irregular shape is formed by an etching method.
- the step of arranging the electron emission portions on the first electrode includes a step of applying a solution in which the particles are mixed with a predetermined fixing material to the surface of the i-th electrode. And a drying step of drying the applied solution.
- the application step may be performed by spinner application.
- the fixing material is removed from a surface near the electron emission site of the electron emission portion.
- the method further includes a step of removing the fixing material from at least a surface of the electron emission portion near an electron emission site.
- the step of disposing the electron-emitting portion on the first electrode includes a step of applying a solution in which particles constituting the electron-emitting device are mixed to a surface of the first electrode. At least removing the solution contained in the applied solution from the surface near the electron emission site of the electron emission portion, And forming a carbide between the first electrode and the first electrode. The carbide fixes the electron emission portion to the first electrode.
- the processing includes exposing to a plasma including at least one of hydrogen, oxygen, nitrogen, argon, krypton, and hydrocarbon.
- a step of forming a t-th electrode and a step of disposing an electron-emitting portion composed of particles or an aggregate thereof on the first electrode are reduced.
- the step of arranging the electron-emitting portion on the first electrode includes the step of: mixing a solution in which a predetermined fixing material and particles constituting the electron-emitting portion are mixed with each other; A coating step of coating the surface of the first electrode, and drying the solution so that the fixing material is removed from at least a surface of the electron emitting portion near the electron emission site contained in the applied solution. And a drying step, whereby the aforementioned object is achieved.
- particles made of a material containing a carbon material having a six-carbon ring structure are used as the particles.
- a vehicle is used as the fixing material.
- the fixing material is present only at the fixing position of the electron emission portion on the surface of the first electrode, and is not present on other portions of the surface of the first electrode.
- An electron emission source includes: a plurality of electron emission elements arranged in a predetermined pattern; and means for supplying an input signal to each of the plurality of electron emission elements.
- Each of the devices is the above-described electron-emitting device of the present invention, wherein the plurality of electron-emitting devices are configured to emit electrons in response to the input signal to each of the devices.
- An image display device of the present invention includes the above-described electron emission source of the present invention, and an image forming member that forms an image by being irradiated with electrons emitted from the electron emission source. Thereby, the above-mentioned object is achieved.
- the method of manufacturing an electron emission source according to the present invention includes: forming a plurality of electron-emitting devices in a predetermined pattern so as to emit electrons in accordance with an input signal to each of the plurality of electron-emitting devices; Forming a means for supplying the input signal to each of the devices, wherein each of the plurality of electron-emitting devices is formed by the method of the present invention described above, thereby achieving the object described above. Is achieved.
- the method for manufacturing an image display device includes: a step of forming an electron emission source; and an image forming member that forms an image by irradiating electrons emitted from the electron emission source with respect to the electron emission source.
- the electron emission source is formed by the method of the present invention described above, thereby achieving the aforementioned object.
- FIG. 1 is a diagram schematically showing a configuration of a cold cathode type electron-emitting device according to a conventional technique.
- FIG. 2 is a diagram schematically illustrating a configuration of the electron-emitting device according to the first embodiment of the present invention.
- FIG. 3 is a view for explaining a certain step in the manufacturing process of the electron-emitting device according to the first embodiment of the present invention.
- FIG. 4 is a view for explaining a certain step in the manufacturing process of the electron-emitting device according to the first embodiment of the present invention.
- FIG. 5 is a view for explaining a certain step in the manufacturing process of the electron-emitting device according to the first embodiment of the present invention.
- FIG. 6 is a view for explaining a certain step in the manufacturing process of the electron-emitting device according to the first embodiment of the present invention.
- FIG. 7 is a diagram schematically showing a layered structure of graphite.
- FIG. 8 is a diagram schematically showing the structure of the graphite particles.
- FIG. 9 schematically shows the configuration of the electron-emitting device according to the second embodiment of the present invention.
- FIG. 10 is a diagram schematically showing a configuration of an electron-emitting device according to the third embodiment of the present invention.
- FIG. 11 is a diagram schematically showing the structure of a carbon nanotube.
- FIG. 12 is a diagram schematically showing a closed state of the tip of the carbon nanotube.
- FIG. 13 is a diagram schematically showing a state in which the tip of the carbon nanotube is open.
- FIG. 14 is a diagram schematically showing a state of a carbon film containing carbon nanotubes.
- FIG. 15 is a diagram schematically showing the state of particles containing carbon nanotubes.
- FIG. 16 is a diagram schematically illustrating a configuration of an electron-emitting device according to the fourth embodiment of the present invention.
- FIG. 17 is a diagram schematically showing a configuration of an electron-emitting device according to the fifth embodiment of the present invention.
- FIG. 18 is a diagram schematically showing another configuration of the electron-emitting device according to the fifth embodiment of the present invention.
- FIG. 19 is a diagram schematically illustrating a configuration of an electron-emitting device according to the sixth embodiment of the present invention.
- FIGS. 20 (a) and (b) are diagrams schematically showing the microscopic configuration and the macroscopic configuration of graphite, respectively.
- FIG. 2 is a diagram schematically showing another configuration of the electron-emitting device according to the sixth embodiment of the present invention.
- FIG. 22 is a diagram schematically showing still another configuration of the electron-emitting device according to the sixth embodiment of the present invention.
- FIG. 23 shows still another configuration of the electron-emitting device according to the sixth embodiment of the present invention.
- 24 (a) to 24 (d) are diagrams for explaining each step of the manufacturing process of the electron-emitting device according to the present invention.
- FIG. 25 is a view for explaining a certain step in another manufacturing process of the electron-emitting device according to the present invention.
- FIG. 26 is a cross-sectional view schematically illustrating a configuration of an image display device according to the eighth embodiment of the present invention.
- FIGS. 27 (a) to (d) are views for explaining each step of the manufacturing process of the image display device of FIG. 26.
- FIG. 28 is a diagram schematically illustrating a configuration of an electron emission source according to the ninth embodiment of the present invention.
- FIG. 29 is a diagram schematically illustrating a configuration of an image display device according to the tenth embodiment of the present invention.
- FIG. 30 is a view schematically showing still another configuration of the electron-emitting device according to the sixth embodiment of the present invention.
- the design of the device structure and the selection of materials that facilitate electron emission are important considerations.
- Such an easily manufactured electron-emitting device is realized.
- the “particles” described in the specification of the present application are not limited to a specific shape. In addition to a separated solid having a so-called granular shape, various shapes such as needles, cylinders, and spheres The isolated individuals with are generically indicated. In the following, “particles or aggregates thereof” may be simply referred to as “particles” for simplicity of explanation.
- FIG. 2 is a configuration diagram schematically showing the configuration of the electron-emitting device according to the first embodiment according to the configuration of the present invention.
- 1 is a substrate (a glass substrate in the present embodiment)
- 2 is a first electrode (a chromium electrode in the present embodiment)
- 24 is an electron-emitting portion
- 4 is an insulating layer ( S ⁇ 2 layers in this embodiment)
- 5 in the second electrode the present embodiment is aluminum electrode.
- the electron-emitting portion 24 is composed of particles 3 of an electron-emitting member, for example, graphite particles 3.
- the electron-emitting device of the present embodiment is formed by a process as described below with reference to FIGS.
- a 200-nm-thick chromium electrode 2 is formed on a glass substrate 1 by RF sputtering.
- the electrode surface coated with the graphite particles 3 is exposed to hydrogen plasma 7 to remove organic substances 6 remaining on the surfaces of the graphite particles 3.
- the temperature of the glass substrate 1 is, for example, 350 degrees.
- the organic substances 6 exposed to the plasma 7 are decomposed and removed, while the position between the graphite particles 3 and the chromium electrode 2 is located.
- the organic material 6 is carbonized into a carbide 8, and remains after the treatment.
- the carbide 8 fixes the Daraphyte particles 3 to the chromium electrode 2.
- the electron emission characteristics from the graphite particles 3 (electron emission portions 24) can be maintained stably.
- S I_ ⁇ 2 layer 4 (thickness 1 5 m) and the aluminum electrode 5 (thickness 0. 1 m) are sequentially formed by a sputtering method, by etching, to form holes at predetermined positions.
- the chromium electrode 2 with the graphite particles 3 attached is located in this hole (see Fig. 6).
- the organic matter 6 remaining on the surface of the graphite particles 3 is removed by hydrogen plasma treatment, and hydrogen is applied between the graphite particles 3 and the first electrode (chromium electrode) 2.
- the carbide 8 is formed by plasma treatment, and the graphite particles 3 are fixed to the second electrode 2.
- the method of removing unnecessary residual organic matter and fixing Dalaphite particles is not limited to this.
- the above process may include exposing to a plasma comprising at least one of hydrogen, oxygen, nitrogen, argon, krypton, and hydrocarbons.
- the organic material 6 is decomposed and removed, but the organic material interposed between the electron emitting portion 24 (particles 3 of the electron emitting member containing a carbon material having a six-carbon ring structure) and the first electrode 2 is removed.
- the material 6 is partially decomposed and transformed into a carbide 8 (carbon or a material mainly containing carbon).
- the carbide 8 functions as a fixing material, and firmly fixes the electron emitting portions 24 (particles 3) to the first electrode 2.
- the graphite particles 3 are used as the electron emitting portions 24, but the constituent material of the electron emitting portions 24 is not limited to the graphite particles 3, but has a six-carbon ring structure. A material containing a carbon material may be used. However, the present inventors have confirmed that, in practical use, it is preferable that the electron emission portions 24 be formed of the graphite particles 3 or aggregates of the graphite particles.
- the graphite has a layered structure in which six carbon rings are connected as shown in FIG. 7.
- the portion where the six carbon rings are interrupted (the cut portion of the ⁇ structure in the six carbon rings) 15) It was found that electrons were easily emitted. On the other hand, it has been found that it is difficult to emit electrons from the surface portion 16 of the six-carbon ring.
- the periphery 17 of the particle is a state in which the hexacarbon ring is interrupted (corresponding to 15 in Fig. 7). Electrons are easily emitted. Therefore, an electron-emitting device having a high-density electron-emitting portion 24 can be realized by dispersing and coating the graphite particles 3 at a high density and functioning as the electron-emitting portion 24. A similar effect can be obtained with an aggregate of graphite particles.
- the electron emitting portion 24 containing the graphite particles 3 or another carbon material having a six-carbon ring structure is fixed to the first electrode 2.
- the first electrode 2 is a chromium electrode.
- the first electrode 2 contains at least one element capable of generating a carbon compound.
- the carbon material having a six-carbon ring structure that functions as the electron emission portion 24 A carbon compound is easily formed between the material containing the material and the first electrode 2.
- the electron-emitting portion 24 particles 3 of the electron-emitting member
- the movement of the electrons from the first electrode 2 to the electron emission portion 24 becomes easy, and the electron emission characteristics are improved.
- FIG. 9 shows a second embodiment of the present invention.
- the basic configuration is the same as that of the first embodiment.
- the chromium electrode 3 is dispersedly coated and functions as an electron emitting portion 24.
- Graphite particle 3 force The end 17 (see Fig. 8) is oriented in the direction of the second electrode (aluminum electrode) 5 (upward perpendicular to the chromium electrode 2) (that is, in the direction of electron emission). ), Are arranged.
- the graphite has a layered structure in which six carbon rings are connected, and the end 17 of the graphite particles 3 corresponds to a portion where the six carbon rings are interrupted (reference numeral 15 in FIG. 7).
- the electron-emitting device of the present embodiment when a potential difference of 30 V is applied between the chromium electrode 2 and the aluminum electrode 5, emission of the electrons from the graphite particles 3 starts. Further, when a potential difference of 50 V was applied, an electron emission density of about 30 A Zmm 2 was confirmed. Further, in the configuration of the present embodiment, the particles 3 can be densely dispersed and arranged, so that the number of points for emitting electrons (also referred to as “electron emission site”) is smaller than in the first embodiment. With the increase, the uniformity of the distribution of electron emission sites also improved.
- the particles functioning as the electron emitting portion 24 are replaced with graphite particles. Even when particles of another material are used, the same effect as described above can be obtained by arranging the places where electrons are easily emitted in the electron emission direction as described above.
- the carbon nanotubes may be arranged so that their tips face the electron emission direction.
- FIG. 10 is a configuration diagram schematically showing the configuration of the electron-emitting device according to the third embodiment of the present invention.
- 1 is a substrate (a quartz glass substrate in the present embodiment)
- 2 is a first electrode (a tungsten electrode in the present embodiment)
- 24 is an electron-emitting portion
- 14 Is a mesh electrode functioning as a second electrode.
- the electron emission portion 24 is constituted by carbon particles (carbon nanotube particles described later) 9 containing carbon nanotubes or aggregates of carbon nanotubes.
- carbon nanotubes 11 are needle-like particles composed of six carbon rings, and their aspect ratio (particle length / particle diameter) is very large. For this reason, the electric field tends to concentrate on the tip of the carbon nanotube 11, and the electron is easily emitted.
- the tip of the carbon nanotube 11 is referred to as reference numeral 11b in FIG. 13 rather than in a closed state with carbon atoms bonded as shown by reference numeral 11a in FIG.
- the terminal carbon atom is in an open state, which is preferable for realizing efficient electron emission.
- the carbon nanotubes 11 may be made by purifying carbon carbon containing carbon nanotubes formed by an arc discharge between the carbon electrodes, or may be formed by a plasma CVD method utilizing catalysis. You may.
- a carbon film containing carbon nanotubes 11 formed in this way is used as a carbon film: L 0 is pulverized into particles to form an electron emitting member 24 constituting the electron emitting portion 24 in the configuration of FIG. 10. Used as particles 9 of In the following description, the particles 9 thus obtained are also referred to as carbon nanotube particles 9.
- the electron-emitting device of the present embodiment is formed by a process as described below.
- a tungsten electrode 2 having a thickness of 200 nm is formed on a quartz glass substrate by RF sputtering.
- 20 000 mg of carbon nanotube particles having an average particle diameter of 20 / m were mixed into 20 cc of a solution of isamine acetate acetate, and the mixture was stirred with an ultrasonic mixer or a rotating roller. Disperse evenly in the solution. At this time, the distribution density of the carbon nanotube particles is 6 ⁇ 10 8 Z cm 2 .
- this solution is applied on a tungsten electrode 02 with a spinner and left to dry in a 300 atmosphere for 1 hour.
- a mesh electrode 14 is set above the quartz glass substrate 1 at a distance of 50 m.
- the first to third steps are basically the same as the corresponding steps in the first embodiment.
- the distributed arrangement is performed.
- the surface of the carbon nanotube particles 9 is exposed to a plasma of hydrogen gas containing 1% oxygen at a high temperature of 700 ° C. at a substrate temperature.
- carbon nanotubes are more likely to be etched than carbon nanotubes 11, and as shown schematically in Fig. 15, some of carbon nanotubes 11 jump out of particles 9. Structure.
- a strong electric field concentration occurs at the tip of the carbon nanotube 11, and electrons are easily emitted.
- the carbon nanotubes 11 formed by arc discharge have a closed structure 1] a, as shown in FIG. 12, but the oxygen concentration of oxygen in a high-temperature atmosphere at 700
- the tip is etched by being exposed to the plasma of hydrogen gas containing, resulting in a structure with the tip open as shown in FIG. 13: 11b.
- the structure 1: 1b having the open end is in a state where the hexacarbon ring is broken, and electrons are easily emitted as described in the first embodiment.
- the number of electron emission sites increases.
- the material of the first electrode 2 is not limited to tungsten, but may be another material such as silicon or titanium. Further, the first electrode 2 may be a mixture of tungsten and copper, or a mixture of tungsten and aluminum.
- the electron-emitting device constituting the electron-emitting portion 24 by the carbon nanotube particles 9 is formed by the above-described process, an electron-emitting device that can stably emit many electrons at a low applied voltage can be realized. . Specifically, electron emission starts when the applied voltage of the mesh electrode 14 is 50 V, and 50 ⁇ m is applied at an applied voltage of 70 V. The electron emission density of AZmm 2 was confirmed.
- the atmosphere in which the carbon nanotube particles 9 are exposed to the hydrogen plasma is not limited to the conditions described in the present embodiment.
- the amount of oxygen mixed into the hydrogen during the plasma treatment is preferably 0.1 atm% to 20 atm%. If the oxygen content is 0.1 atm% or less, the etching effect is reduced, and it is difficult for a part of the carbon nanotubes 11 to protrude from the particles 9. At the same time, the carbon nanotubes]. It is not preferable because the tip is difficult to be opened. On the other hand, if the amount of oxygen to be mixed is more than 20 atm%, the etching action becomes too strong, and it becomes difficult to control the process conditions.
- the optimum condition of the temperature of the substrate 1 during the above-described plasma processing varies depending on the plasma conditions. However, if the substrate temperature is 20 (TC or less, it is not preferable because the etching effect is extremely reduced. If a material for synthesizing a carbon compound is used as a constituent material of the first electrode 2, The substrate temperature is preferably maintained at a temperature higher than the temperature at which the compound can be synthesized, and when the substrate temperature is higher than 0.1000 ° C., the etching action becomes too strong, and it becomes difficult to control the process conditions. , Not preferred.
- the mesh electrode 14 is used as the second electrode.
- the electrode configuration having the shape described in the first: I embodiment is used. It is good.
- the mesh electrode 14 described in the present embodiment is not limited to the case where the carbon nanotube particles 9 are used, but is also used when the electron emission portion 24 is configured using another electron emission member. It is possible and can be used in other embodiments of the present specification. (Fourth embodiment)
- FIG. 16 schematically shows the configuration of the electron-emitting device according to the fourth embodiment of the present invention.
- L6 In the configuration of L6, 1 is a substrate (a glass substrate in this embodiment), 2 is a first electrode (aluminum electrode in this embodiment), 2 is an electron-emitting portion, and 4 is an insulator
- the layer (Si 2 layer in this embodiment), 5 is a second electrode (aluminum electrode in this embodiment), and 13 is a Si semiconductor layer.
- the electron emission portion 24 is composed of particles 3 of an electron emission member, for example, graphite particles 3.
- the Si semiconductor layer 13 is formed on the substrate 1, and the first electrode 2 formed thereon has a substantially multilayer structure.
- Such an electron-emitting device of the present embodiment is obtained by adding a step of forming a Si semiconductor layer 13 to the process described with reference to FIGS. 3 to 6 in the first embodiment. Is formed by such a process.
- the thickness of 2 5 0 S i semiconductors layers nm] 3 form a (P-type resistivity 4 X 1 0 6 ⁇ ⁇ cm ).
- an aluminum electrode 2 having a thickness of 500 nm is formed on the Si semiconductor layer 13 by RF sputtering.
- 40 mg of graphite particles having an average particle size of 5 m were mixed with 20 cc of a solution of isobutyl methacrylate diluted with butyl rubitol, and the mixture was homogenized by ultrasonic stirring or half-spreading with a rotating roller. Disperse in.
- the distribution density of the graph eye DOO particles is 2 X 1 0 7 ⁇ Z cm 2.
- This solution is applied on an aluminum electrode 2 with a spinner and left to dry in a 300 ° C. atmosphere for 1 hour. Thereby, graphite particles 3 adhere to aluminum electrode 2. Further, after drying, the surface on which the graphite particles are applied is exposed to hydrogen plasma to remove organic substances remaining on the surfaces of the graphite particles 3. Then, sequentially formed on the S I_ ⁇ two layers 4 (thickness 1 5 im) and the aluminum electrode 5 sputtering (thickness ⁇ ⁇ ), by etching, to form holes at predetermined positions. The aluminum electrode 2 to which the graphite particles 3 adhere is located in this hole.
- At least a semiconductor layer such as the S ⁇ semiconductor layer 13 or Alternatively, if one or more high-resistance layers are provided and the second electrode 2 is formed thereon, and the first electrode 2 has a substantially multilayer structure, the semiconductor layer or the high-resistance layer Abnormal discharge becomes difficult to occur, and the emitted current value stabilizes.
- the electron emission density of about 3 0 AZmm 2 at an applied voltage 7 5 V It could be confirmed. At this time, no element rupture due to abnormal discharge or the like was observed at all, and the emission current was extremely stable. If the Si semiconductor layer 13 is not provided, a variation of the emission current with time of about 50% occurs. According to the present embodiment, the variation of the emission current with time is: 10% or less. Was.
- a structure in which one or more semiconductor layers such as the Si semiconductor layer 13 or a high resistance layer is provided and the first electrode 2 has a substantially multilayer structure is described in another embodiment of the present specification. Is also applicable.
- an electrode having a shape in which an opening is provided at a position corresponding to the electron-emitting portion or a mesh-shaped electrode is used as the second electrode.
- a planar electrode having no opening may be arranged at a predetermined distance from the electron emission unit.
- FIG. 17 is a cross-sectional view schematically illustrating a configuration of an electron-emitting device according to the fifth embodiment of the present invention.
- a conductive layer 51 functioning as a first electrode is formed on a substrate 61.
- particles 52 of the electron-emitting member are fixed by a fixing material 53 to form an electron-emitting portion 54.
- an electron extraction electrode (second electrode) 55 is arranged so as to face the substrate 61.
- the configuration in FIG. 17 is generally called a diode configuration. In the electron-emitting device having this configuration, a voltage is applied to the electron extraction electrode 55, an electric field is concentrated on the particles 52 constituting the electron-emitting portion 54, and electrons 56 are extracted therefrom.
- the particles 52 constituting the electron-emitting portion 54 are formed by a conductive layer (first electrode) 51. Therefore, it is necessary to apply and apply the coating securely and uniformly and at a high density. In this embodiment, since the particles 52 are fixed by the fixing material 53, an extremely stable adhesion state can be secured.
- FIG. 17 shows a state in which the fixing material 53 is present only in the vicinity of the conductive layer 51 and the particles 52, but the present invention is not limited to this.
- the state in which the bonding material 53 exists also on the surface of the particle 52 may be employed.
- the fixing material 53 exists on the surfaces of the particles 5 and 2 as described above, if the surface near the actual electron emission point (electron emission site) is also covered with the fixing material 53, However, it becomes difficult to emit electrons. Therefore, at least on the surface near the electron emission point (electron emission site) of the particle 52, in the configuration shown, near the upper end of the particle 52, there is no sticking and the material 53, and the particle Preferably, the surface of 52 is exposed.
- the fixing material on the surface of the particles 52 of the electron-emitting member is removed, thereby maintaining the original electron-emitting characteristics of the electron-emitting member. It is preferable that a sufficient amount of the fixing material 73 remain between the conductive layer 51 and the particles 52 to realize a state in which a sufficient fixing property is secured. Such a state is realized by using, as the fixing material 53, a peak, which is a material frequently used in phosphor coating and the like.
- the vehicle is a preferable material as the fixing material 53 because it has the advantage of being used in a vacuum and has the advantage of being able to realize the above-mentioned fixing state.
- the particles 52 of the electron-emitting member constituting the electron-emitting portion 54 may be independent of each other, or may be in a partially aggregated state.
- the conductive layer 51 functions as an electrode for supplying electrons to the particles 52 constituting the electron-emitting portion 54, and can be formed of a conductive thin film or a thick film including ordinary metal. . Further, the effect of the present invention can be obtained regardless of whether the conductive layer 51 has a single-layer structure or a multilayer structure. If the structure permits, a configuration combining the substrate 61 and the conductive layer 5: 1 is also possible.
- the particles 52 of the electron-emitting member are adhered onto the conductive layer 51 with the fixing material 53, the space between the conductive layer (electrode) 51, which is the electron supply source, and the particles 52 is formed. It is firmly fixed and its reliability is improved, and a homogenous junction is established between the two, so that the injection of electrons from the conductive layer 51 to the particles 52 is performed well.
- the configuration of the electron-emitting device is changed to the above-described diode configuration, and a lead electrode having an opening at a position corresponding to the electron-emitting portion 54 is provided at a predetermined distance from the electron-emitting portion 54.
- a similar effect can be obtained even when a so-called triode configuration is provided at a distance.
- FIG. 19 is a cross-sectional view schematically showing a configuration of an electron-emitting device according to the sixth embodiment of the present invention.
- the particles of the electron-emitting member constituting the electron-emitting portion 54 in the configuration described in the fifth embodiment are particularly graphite particles 72.
- a conductive layer (electrode) 51 is formed on 61.
- the graphite particles 72 are fixed by a fixing material 53 to form an electron emitting portion 54.
- an electron extraction electrode 55 is arranged so as to face the substrate 51.
- the configuration in FIG. 19 is also generally called a diode configuration.
- a voltage is applied to the electron extraction electrode 55, an electric field is concentrated on the graphite particles 72 constituting the electron-emitting portion 54, and electrons 56 are extracted therefrom.
- FIG. 20 (b) schematically shows the macroscopic state of the graphite particles 72. Looking microscopically, as schematically shown in FIG.
- a structure in which the hexacarbon cyclic structure is two-dimensionally expanded has a layered structure.
- the broken portion of the six-carbon ring having a microscopic structure is exposed at the end face of the graphite particles 72. Therefore, when an electric field is concentrated on the graphite particles 72, such an exposed portion where the ⁇ bond is broken (in the configuration of FIG. 19, the emission path of the electrons 56 is schematically shown by an arrow in the figure) It has been found by experiment that many electrons are emitted from the edge (as shown in the figure).
- the degree of vacuum is 1 0 V / / voltage so that the electric field strength is obtained in m in an atmosphere of 1 0- 7 T orr order was applied and the emission current was measured.
- graphite particles were used as the particles of the electron-emitting member constituting the electron-emitting portion, an emission current on the order of aA was obtained.
- C u by using the A l, and T i 0 2 as an electronic release out member, was only E mission current n A order either case.
- E mission current n A order either case.
- the broken portion of the ⁇ bond of the six-carbon ring in the graphite particles as described above may be naturally occurring or may be formed in a later step.
- FIG. 21 shows a graphite particle 7 2 in which, in the configuration of FIG. L9, the normal to the lamination surface is arranged so as to be substantially perpendicular to the surface of the conductive layer (electrode) 51.
- a concave portion (cut portion) 7 22 is provided on the surface (upper surface) of. As a result, the portion where the ⁇ bond is broken is exposed in this portion 722. As a result, this recess Electrons are likely to be emitted from 72 2, and substantially the vicinity of the concave portion 72 2 acts as an electron emitting portion 54. Furthermore, this concave part 7 2 2
- the selective formation on the surface of 72 makes it possible to selectively emit electrons.
- the same effect can be obtained by forming the concave portions 722 on the surface of the graphite particles 72 by a chemical action instead of forming them mechanically.
- the graphite particles 72 are drawn in such a direction that the end face of the graphite electrode 72 faces the electron extraction electrode 55 (that is, the normal to the lamination surface is the conductive layer (electrode)). It is fixed on the conductive layer 51 with a fixing material 53 so as to be substantially parallel to the surface of 51.
- the graphite particles often have a flat shape as schematically shown in FIG. 200 (b) due to the microscopic laminated structure shown in FIG. 20 (a). Therefore, the conductive layer 5
- the normal to the surface of the conductive layer 51 often becomes substantially parallel to the normal to the surface of the conductive layer 51.
- the electric field concentrates on the portion of the six-carbon ring exposed at the end face where the ⁇ bond is broken. Becomes inefficient5.
- the end faces of the graphite particles 72 are attracted by electrons.
- the electrodes By arranging the electrodes so that they face the output electrodes 55 (that is, the normal to the lamination surface is almost parallel to the surface of the conductive layer (electrode) 51), the electric field is effectively concentrated on the end face. And the electron emission efficiency can be improved.
- substrate 62 having an uneven surface is used, and conductive layer 51 is provided on the uneven shape.
- Graphite particles 72 as an electron-emitting member are provided along this uneven shape, and an electron extraction electrode 55 is provided further above the graphite particles.
- the graphite particles 72 are fixed along the uneven shape of the surface of the substrate 62, so that the end faces thereof are necessarily fixed to the electron extraction electrode 55. .
- the end faces of the graphite particles 72 where the sigma bond of the six-carbon ring is broken are exposed to the electron extraction electrode 55, and electric field concentration is effectively generated.
- the electron emission efficiency is improved.
- the use of highly oriented graphite having a high orientation of the six-carbon ring structure as the graphite particles 72 allows the above effects to be more remarkably obtained. Become.
- a known method such as roughening of the substrate surface by etching or roughening of the substrate surface by blast treatment may be appropriately selected.
- the conductive layer is formed on the flat substrate surface, and then the conductive layer is formed. The same effect as described above can be obtained even when the uneven shape is provided directly on the surface of the substrate.
- the configuration of the electron-emitting device is changed to the above-described diode configuration.
- a similar effect can be obtained by a so-called triode configuration in which an extraction electrode having an opening at a position corresponding to the electron emission portion 54 is provided at a predetermined distance from the electron emission portion 54.
- the state of existence of the fixing material 53 in the above description is not limited to the ⁇ type particularly illustrated above, and the actual state of electron emission from the graphite particles 72 is not limited by the fixing material.
- other forms may be used.
- the fixing material on the surface of the graphite particles 72 is removed to secure the original electron emission characteristics of the electron emission member, while the circle in FIG.
- a sufficient amount of the adhesive material 73 remains between the conductive layer 51 and the graphite particles 72 to secure sufficient adhesion. It is preferable to realize such a state.
- Such a state is realized by using, as the fixing material 53, a vehicle that is a material that is frequently used in phosphor coating or the like.
- an example of a manufacturing process of an electron-emitting device including a preferable application step of the fixing material described above ;
- FIGS. 24 (a) to (c) a specific application step will be described.
- a conductive layer 51 is formed on a substrate 6i.
- a mixed solution of the particles 52 of the electron-emitting member and the fixing material 53 is applied dropwise onto the formed conductive layer 5] as shown in FIG. dry.
- the particles 52 are fixed on the conductive layer 51 as shown in FIG. 24 (c).
- the particles 52 can be stably adhered to the conductive layer 51 with high density and uniformity, and the emission current can be made uniform and stable.
- FIG. 24 (a) a conductive layer 51 is formed on a substrate 6i.
- a mixed solution of the particles 52 of the electron-emitting member and the fixing material 53 is applied dropwise onto the formed conductive layer 5] as shown in FIG. dry.
- the particles 52 are fixed on the conductive layer 51 as shown in FIG. 24 (c).
- the particles 52 can be stably adhered to the conductive layer 51 with high density and uniformity, and the emission current can
- the substrate 61 on which the conductive layer 51 is formed is placed on a turntable 80, and a mixed solution of the particles 52 and the fixing material 53 is dropped while rotating.
- spinner coating the coating uniformity of the particles 52 is further increased.
- the particles 52 of the electron-emitting member can be surely fixed to the conductive layer 51, while the fixing material 53 force is applied to the electron-emitting site of the particles 52 of the electron-emitting member. It is important that they do not remain on nearby surfaces.
- the fixing material 53 has a property satisfying the above requirements. Is preferred.
- the fixing material 53 which is a material that is frequently used in, for example, phosphor application, is used as the fixing material 53, the above-described characteristics that the fixing material should have can be reliably ensured. Can be.
- a vehicle when a vehicle is used as the fixing material, after drying for about 1 hour at about 400 after the coating process shown in Fig. 24 (b), the result is shown in Fig. 24 (d).
- the bonding material (vehicle) on the surface of the particles 52 of the electron emitting member is removed, and the original electron emitting characteristics of the electron emitting member are secured.
- a sufficient amount of the fixing material (vehicle) 73 remains between the conductive layer 51 and the particles 52, and sufficient fixing property is ensured.
- the particles of the electron-emitting member are made of a material that is not easily damaged by post-processing.
- a carbon material has high spatter resistance, so that it is unlikely to be damaged even after a post-treatment such as a plasma treatment.
- FIG. 26 shows a schematic sectional view of an image display device as an eighth embodiment of the present invention.
- a plurality of electron-emitting devices 2 1 1 according to the present invention are formed on a substrate 2 12 a that also serves as a part of the force envelope 2 12.
- Source 2 2 4 constitutes.
- Reference numeral 213 denotes an image forming unit, which includes an electronic drive electrode 2 13 a for performing drive and control of, for example, acceleration, deflection, modulation, and the like for the electron from the electron-emitting device 2 1 1, and an envelope 2 1.
- a circuit for supplying an input signal to each of the plurality of electron-emitting devices 211 is further provided, and the emission of electrons from the plurality of electron-emitting devices 211 is supplied to each of them. It is configured to be controlled according to the input signal.
- the electron-emitting device of the present invention is used as the electron-emitting source 211, it is possible to take out an emission current that is stable at low voltage and stable in time and place, and therefore, high quality. An image display device can be realized.
- 27 (a) to 27 (d) show schematic process diagrams of a method for manufacturing the image display device of the present embodiment.
- FIG. 27 (a) a plurality of electron-emitting devices 211 of the present invention are formed on a substrate 212a serving also as a part of the envelope 212, and an electron-emitting source is formed. Construct 2 2 4. Then, an electronic drive electrode 21a, which is a part of the image forming section 2113, is provided (FIG. 27 (b)). Part 2 1 2 b is installed (Fig. 27 (c)). Finally, the inside of the envelope 2 12 is evacuated to manufacture the image display device according to the present embodiment shown in FIG. 26 (FIG. 27 (d)).
- FIG. 28 is a diagram schematically showing the configuration of the electron emission source 3 22 in the present embodiment.
- a plurality of X-direction wirings X1 to Xm (collectively denoted by reference numeral 320) which are electrically insulated from each other, and a plurality of Ys which are also electrically insulated from each other
- the directional wirings Yl to Yn (collectively denoted by reference numeral 3221) are arranged at a distance of about 50 tm in directions perpendicular to each other.
- the Y direction wiring 3 2 is formed at each intersection 3 288 so that the electron-emitting device according to the present invention is formed at each intersection 3 288 of the X direction wiring 3 20 and the Y direction wiring 3 2 1.
- a plurality of electron-emitting portions 3] 1 each containing carbon having a six-carbon ring structure are arranged on the X-direction wiring 320 intersecting with each other.
- the electron-emitting source according to the present embodiment in which a plurality of electron-emitting devices (hereinafter, the same reference numeral 328 as the intersection is used) is two-dimensionally arranged and wired in a simple matrix. The structure of 3 2 2 is obtained.
- the numbers of the X-direction wirings 320 and the Y-direction wirings 321 are not limited to specific values.
- m and n may be the same number, such as] 6 X 16, or m and n may be different numbers.
- the total amount of electron emission can be controlled by using the voltage applied to the Y-direction wiring 32 I as an input signal. At this time, the amount of electron emission can be modulated by changing the voltage value applied to each electron-emitting device 328.
- the electron emission source 322 having the configuration of FIG. 28 has a higher electron emission efficiency and a smaller change in the amount of emitted electrons with time, as compared with the configuration according to the related art.
- an input signal having a distribution in the X and Y directions is given to the electron-emitting devices 328 arranged two-dimensionally in the configuration of FIG. 28, the electron emission corresponding to the distribution of the input signal is given. The distribution is obtained.
- FIG. 29 is a schematic diagram illustrating the configuration of the image display device of the present embodiment.
- the image display device of FIG. 29 includes an electron emission source 322 (see the ninth embodiment) configured by wiring the electron emission elements of the present invention in a simple matrix.
- the individual electron-emitting devices 328 included in the electron-emitting source 322 can be selectively and independently driven.
- the electron emission source 3 2 2 is fixed on the back plate 3 2 3, and the face plate 3 2 4 is supported by the side plate 3 2 7 so as to be opposed to the electron emission source 3 2 3.
- a transparent electrode 325 and a phosphor 326 are formed on the inner surface of the face plate 324 (the surface facing the base plate 324).
- the container composed of the face plate 3 24, the back plate 3 2 3, and the side plate 3 2 7 needs to maintain the inside of the container at a vacuum. Therefore, the joint between the plates is sealed so as not to cause a vacuum leak.
- the frit glass is fired at a temperature of about 500 in a nitrogen atmosphere and sealed. After sealing, the interior of the container to be formed in each play Bok, with heating if necessary, by oilless evacuation pump such as I O Nponpu than about 1 X 1 0- 7 T orr a high vacuum atmosphere Evacuate until it is finally sealed. To maintain this degree of vacuum, a getter (not shown) is placed in the container.
- the phosphor 326 on the inner surface of the face plate 324 has a black stripe arrangement, and is formed by, for example, a printing method.
- the transparent electrode 3 25 It functions as an extraction electrode for applying a bias voltage for accelerating the element, and is formed by, for example, an RF sputtering method.
- an external predetermined drive circuit (not shown) supplies X-side wiring 320 and Y-side wiring 321 (see FIG. 28 in the ninth embodiment).
- a predetermined input signal is applied to each electron-emitting device 328.
- the electron emission from each electron-emitting device 328 is controlled, and the emitted electrons cause the phosphor 326 to emit light in a predetermined pattern. This makes it possible to obtain an image display device such as a flat panel display that can display high-definition and high-definition images.
- each plate is not limited to the above-described configuration.
- the structure may be such that a support is further provided between the support 3 and the support 3.
- a focus electrode aperture control electrode
- the electron emission source 322 and the face plate 324 is further provided between the electron emission source 322 and the face plate 324. It can also be configured.
- the image display device includes at least an electron emission source 322 including a plurality of electron emission elements 328, an image forming member such as a phosphor 326, And a container for holding the image forming member in a vacuum state, and the electron emission source 32 (each of the electron emitting elements 3 28) in response to an input signal.
- An image is formed by irradiating (phosphor 3 2 6) with acceleration.
- the electron emission source 322 according to the present invention capable of emitting electrons with high efficiency and stability as the electron emission source, the phosphor 322 can be controlled with high brightness with high controllability. Can emit light.
- the counter electrode (electron extraction electrode) as the second electrode in the present invention may be provided as a part of the electron-emitting device, or may be provided as another constituent member not included in the electron-emitting device. good. Industrial applicability
- electrons are efficiently and uniformly emitted by forming an electron emission portion using particles containing a carbon material having a six-carbon ring structure or an aggregate thereof.
- a highly stable electron-emitting device is obtained.
- a carbon material for example, graphite or a carbon nanotube
- electrons can be more efficiently emitted. Can be released and a large emission current can be obtained.
- an electron emission source using a plurality of electron emission elements for example, by arranging them in a two-dimensional array, it is possible to widen the electron emission region. Also, at this time, if the electrical connection state to each electron-emitting device constituting the electron-emitting device is appropriately set, the electron emission amount of each electron-emitting device can be controlled according to the input signal. It is possible to obtain an arbitrary electron emission distribution and reduce power consumption.
- an image can be emitted from the image-forming member with high controllability and high luminance.
- Display devices eg flat panel devices Play
- a carbon material for example, graphite-carbon nanotube
- a carbon material having a structure in which a hexacarbon ring is interrupted, which is very suitable as a constituent material of an electron emitting portion, functions as an electron emitting portion. It can be arranged on a predetermined surface with high reproducibility and arbitrary density. Thereby, a highly efficient electron-emitting device can be easily formed.
- a stable and highly reliable fixing state is achieved by adopting a structure in which particles of the electron-emitting member are fixed to the conductive layer functioning as an electron supply source with a fixing material. As a result, the emission current can be stabilized.
- the fixing material by using a solution in which the particles of the electron-emitting member are mixed in the fixing material, it is possible to apply the solution by, for example, spin coating or the like due to its appropriate viscosity. This makes it possible to easily apply the fixing material, so that a uniform and high-density dispersed arrangement of the electron-emitting portions composed of particles or agglomerates of particles can be easily realized, and the emission state can be reduced. Uniformization, high density, and easy formation of highly efficient electron-emitting devices are possible.
Description
Claims
Priority Applications (2)
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US09/582,801 US6645402B1 (en) | 1998-06-18 | 1999-06-17 | Electron emitting device, electron emitting source, image display, and method for producing them |
EP99925363A EP1047097A4 (en) | 1998-06-18 | 1999-06-17 | ELECTRONIC EMITTING DEVICE, ELECTRON EMITTING SOURCE, IMAGE INDICATOR AND MANUFACTURING METHOD THEREFOR |
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JP10/171909 | 1998-06-18 | ||
JP17190998 | 1998-06-18 | ||
JP10/202995 | 1998-07-17 | ||
JP20299598 | 1998-07-17 |
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WO1999066523A1 true WO1999066523A1 (fr) | 1999-12-23 |
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PCT/JP1999/003240 WO1999066523A1 (fr) | 1998-06-18 | 1999-06-17 | Dispositif emetteur d'electrons, source emettrice d'electrons, affichage d'images ainsi que procede de production de ceux-ci |
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US (1) | US6645402B1 (ja) |
EP (1) | EP1047097A4 (ja) |
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WO (1) | WO1999066523A1 (ja) |
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JPH08263010A (ja) | 1995-03-23 | 1996-10-11 | Matsushita Electron Corp | 気体放電型表示装置およびその駆動方法 |
US6057637A (en) * | 1996-09-13 | 2000-05-02 | The Regents Of The University Of California | Field emission electron source |
EP1361592B1 (en) * | 1997-09-30 | 2006-05-24 | Noritake Co., Ltd. | Method of manufacturing an electron-emitting source |
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JP4008123B2 (ja) * | 1998-06-04 | 2007-11-14 | 株式会社アルバック | 炭素系超微細冷陰極及びその作製方法 |
GB2346731B (en) * | 1999-02-12 | 2001-05-09 | Toshiba Kk | Electron emission film and filed emission cold cathode device |
JP2001180920A (ja) * | 1999-12-24 | 2001-07-03 | Nec Corp | ナノチューブの加工方法及び電界放出型冷陰極の製造方法並びに表示装置の製造方法 |
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1999
- 1999-06-17 EP EP99925363A patent/EP1047097A4/en not_active Withdrawn
- 1999-06-17 TW TW088110372A patent/TW432419B/zh not_active IP Right Cessation
- 1999-06-17 US US09/582,801 patent/US6645402B1/en not_active Expired - Lifetime
- 1999-06-17 WO PCT/JP1999/003240 patent/WO1999066523A1/ja active Application Filing
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Cited By (8)
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EP1061554A1 (en) * | 1999-06-15 | 2000-12-20 | Iljin Nanotech Co., Ltd. | White light source using carbon nanotubes and fabrication method thereof |
US6514113B1 (en) | 1999-06-15 | 2003-02-04 | Iljin Nanotech Co., Ltd. | White light source using carbon nanotubes and fabrication method thereof |
EP1061555A1 (en) * | 1999-06-18 | 2000-12-20 | Iljin Nanotech Co., Ltd. | White light source using carbon nanotubes and fabrication method thereof |
GB2355849A (en) * | 1999-08-10 | 2001-05-02 | Delta Optoelectronics Inc | Light emitting cell comprising carbon nanotube structure |
US6780075B2 (en) * | 1999-12-24 | 2004-08-24 | Nec Corporation | Method of fabricating nano-tube, method of manufacturing field-emission type cold cathode, and method of manufacturing display device |
EP1122344A3 (en) * | 2000-02-04 | 2002-01-30 | Nihon Shinku Gijutsu Kabushiki Kaisha | Graphite nanofibers and their use |
EP1313122A1 (en) * | 2000-07-19 | 2003-05-21 | Matsushita Electric Industrial Co., Ltd. | Electron emission element and production method therefor, and image display unit using this |
EP1313122A4 (en) * | 2000-07-19 | 2007-10-31 | Matsushita Electric Ind Co Ltd | ELECTRON EMISSION ELEMENT AND METHOD FOR MANUFACTURING SAME; DISPLAY USING THE SAME |
Also Published As
Publication number | Publication date |
---|---|
EP1047097A4 (en) | 2006-08-09 |
US6645402B1 (en) | 2003-11-11 |
EP1047097A1 (en) | 2000-10-25 |
TW432419B (en) | 2001-05-01 |
WO1999066523B1 (fr) | 2000-03-23 |
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